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Part Manufacturer Description Datasheet Download Buy Part
STELLARIS-3P-EXPLO-THREADX-RTOS Texas Instruments ThreadX V5.0
STELLARIS-3P-MICDI-SMXFFS-FS Texas Instruments smxFFS
STELLARIS-3P-GUANG-SMARTPRO-PGRT Texas Instruments SmartPRO (English)
STELLARIS-3P-QNLPS-RTXC-QPCPLUS Texas Instruments Quantum Leaps QPC Plus
STELLARIS-3P-HCC-EUSBOTG-STACK Texas Instruments Embedded USB OTG
STELLARIS-3P-PORTG-CANOPEN-PGRT Texas Instruments CANopen Library for Luminary Controllers

75OC/W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1993 - IH5048

Abstract: DG180 level shifter from TTL to pMOS HI-5051 HI-5050 HI-5048 HI-5047A HI-5047 HI-5046A HI-5040
Text: . . . . . . . . . . . . 80oC/ W 24oC/ W SOIC Package. . . . . . . . . . . . . . . . . . . . . 120oC/ W Plastic DIP Package . . . . . . . . . . . . . . . . 100oC/ W PLCC Package . . . . . . . . . . . . . . . . . . . . 80oC/ W CLCC Package . . . . . . . . . . . . . . . . . . . . 75oC/ W 20oC/ W


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PDF HI-5040 HI-5051 HI-5046A HI-5047A HI-5048 HI-5051 HI-5047A HI-5040 IH5048 DG180 level shifter from TTL to pMOS HI-5050 HI-5047
1993 - MP5A

Abstract: HI1 301 HI-307 HI-306 HI-305 HI-304 HI-303 HI-302 HI-301 HI-300
Text: 95oC/ W 24oC/ W 14 Lead Plastic DIP . . . . . . . . . . . . . . . . . . . 100oC/ W 14 Lead SOIC . . . . . . . . . . . . . . . . . . . . . 120oC/ W 10 Pin TO-100 Metal Can . . . . . . . . . . . . 136oC/ W 65oC/ W Maximum Power Dissipation Ceramic DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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PDF HI-300 HI-307 125oC) Hl-300 Hl-307 monoli300 HI-303 HI-301, MP5A HI1 301 HI-307 HI-306 HI-305 HI-304 HI-303 HI-302 HI-301
1993 - D-465

Abstract: HI1-0381-2 HI1-0381-5 HI2-0381-2 HI2-0381-5 HI-381 HI-387 HI-390 MN5B
Text: +75oC 16 Lead Plastic SOIC ( W ) HI1-0387-2 o -55 C to +125 C 0oC to +75oC 14 Lead Ceramic , Plastic DIP HI9P0381-5 MN1B MN2B 16 Lead Plastic SOIC ( W ) HI3-0381-5 V+ 10 Pin TO , 16 Lead Plastic DIP HI3-0390-9 -40oC to +85oC 16 Lead SOIC ( W ) HI3-0384-5 0oC to +75oC 16 Lead Plastic DIP HI3-0384-9 -40oC to +85oC 16 Lead SOIC ( W ) DIGITAL INPUT BUFFER AND , , 14 Lead . . . . . . . 95oC/ W 24oC/ W Ceramic DIP Package, 16 Lead . . . . . . . 80oC/ W 24oC/ W


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PDF HI-381 HI-390 Hl-381 Hl-390 HI-391 D-465 HI1-0381-2 HI1-0381-5 HI2-0381-2 HI2-0381-5 HI-387 HI-390 MN5B
1993 - HI1-1818A-2

Abstract: HI3-1818A-5 HI1-1818A-5 HI-1818A HI-1828A HI4P1818A-5 HI1-1818A multiplexer/HI3-1818A
Text: Resistance JA JC Ceramic DIP Package . . . . . . . . . . . . . . . 77oC/ W 23oC/ W Ceramic LCC Package . . . . . . . . . . . . . . 75oC/ W 20oC/ W Plastic DIP Package . . . . . . . . . . . . . . . . 100oC/ W Plastic PLCC Package . . . . . . . . . . . . . . 80oC/ W Operating Temperature Ranges HI


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PDF HI-1818A, HI-1828A Hl-1818A HI-1828A HI-1818A -15VSUPPLY HI1-1818A-2 HI3-1818A-5 HI1-1818A-5 HI-1818A HI4P1818A-5 HI1-1818A multiplexer/HI3-1818A
2009 - mj 13003

Abstract: transistor MJ 13003 13003CD E13003 13003c 13003 transistor E 13003 TRANSISTOR E13003C transistor 13003 HMJE13003E
Text: =25°C) . 35 W · Maximum Voltages and Currents (TA=25°C) VCEX Collector to Emitter Voltage


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PDF HE200502 HMJE13003E O-220 Di120 183oC 217oC 260oC mj 13003 transistor MJ 13003 13003CD E13003 13003c 13003 transistor E 13003 TRANSISTOR E13003C transistor 13003 HMJE13003E
2009 - Not Available

Abstract: No abstract text available
Text: =25°C) . 20 W • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Emitter Voltage


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PDF HT200210 HMJE13003 O-126 183oC 217oC 260oC 10sec
1993 - HI4-0508/883

Abstract: AN521 HI-506 HI-507 HI-508 HI509 HI-509 HI-549 CERAMIC LEADLESS CHIP CARRIER LCC 68 pad
Text: Resistance JA JC 16 Lead Ceramic DIP Packages . . . . . . . 80oC/ W 24oC/ W 16 Lead SOIC Packages . . . . . . . . . . . . . 115oC/ W 16 Lead Plastic DIP . . . . . . . . . . . . . . . . . 100oC/ W 20 Lead Ceramic LCC Packages . . . . . . 75oC/ W 20oC/ W 20 Lead PLCC . . . . . . . . . . . . . . . . . . . . . 80oC/ W 28 Lead Ceramic DIP Packages . . . . . . . 55oC/ W 20oC/ W 28 Lead Plastic DIP Package . . . . . . . . . 60oC/ W 28 Lead SOIC Package. . . . . . . . . . . . . . 70oC/ W 28 Lead Ceramic LCC


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PDF HI-506, HI-507 HI-508, HI-509 HI-506/HI-507 HI-508/HI-509 05A/cm2 HI-508 HI4-0508/883 AN521 HI-506 HI-507 HI-508 HI509 HI-509 HI-549 CERAMIC LEADLESS CHIP CARRIER LCC 68 pad
2010 - transistor 7830

Abstract: IC 7830 HMJE13003 tl 7400 IC 7430
Text: =25°C) . 20 W · Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage


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PDF HT200210 HMJE13003 O-126 Dis120 183oC 217oC 260oC 10sec transistor 7830 IC 7830 HMJE13003 tl 7400 IC 7430
2006 - RSS070N05

Abstract: equivalent transistor rss070
Text: *1 *2 Limits 45 20 ±7.0 ±28 1.6 28 2 150 -55 to +150 Unit V V A A A A W o o , ambient Symbol Rth(ch-a) * Limits 62.5 Unit o C/ W * Mounted on a ceramic board Rev.A


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PDF RSS070N05 RSS070N05 equivalent transistor rss070
2002 - Not Available

Abstract: No abstract text available
Text: 193 pF o C/ W o C RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted


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PDF 1N4933 1N4937 250oC/10 DO-204AL DO-41) MIL-STD-750, 100oC
2000 - DS5101-4

Abstract: DS5101 DS51014 5625A MP02 MP02G175 MP02GN175 DS5101-3 HB17512
Text: ) Max. dc Symbol 0.39 o C/ W Mounting torque = 6Nm with mounting compound 0.07 o C/ W Conditions C/ W C/ W Tvj Virtual junction temperature 150 o Tsto , ) forward characteristics (Per diode) Thermal impedance - (°C/ W ) 0.4 d.c. 0.3 0.2 0.1 0 , °C) 5/9 MP02 XX 175 Series On-state power loss per device - ( W ) 350 d.c. 300 250 180 , 175 Series 1200 0.04 0.02 Rth(hs-a) °C/ W Total power - ( W ) 1000 R - Load 800 0.10


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PDF DS5101-3 DS5101-4 MP02/175 150oC DS5101 DS51014 5625A MP02 MP02G175 MP02GN175 HB17512
NJW1181

Abstract: NJW1181FP1 QFP48-P1 5bb4 D-0300
Text: g h 2 SRGH2 AinBout, Mode=High, f=100Hz 1.5 3.5 5.5 dB L o w SRGL AinAout , AinBout, Mode=High, f=100Hz 4.5 6.5 8.5 dB L o w SR2GL AinAout, Mode=Low, f , 0 0 0 0 1 R/ W D3 D2 R/ W =0: Receive Only R/ W =1: ·Select Address


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PDF NJW1181 NJW1181BBE& NJW1181FP1 QFP48-P1 -20oC -20dBV SoundNJW1181BBE NJW1181 NJW1181FP1 QFP48-P1 5bb4 D-0300
2009 - HMJE13003

Abstract: No abstract text available
Text: =25°C) . 20 W · Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage


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PDF HT200210 HMJE13003 O-126 Dis120 183oC 217oC 260oC 10sec HMJE13003
2008 - hj772

Abstract: Y2 MARKING
Text: designed for using in output stage of 10 W audio amplifier, voltage regulator, DC-DC converter and relay , =25°C) . 1.4 W Total Power Dissipation (TC=25°C) . 10 W · Maximum Voltages and Currents BVCBO Collector to Base Voltage , case Max. 12.5 Rjc Unit o C/ W Electrical Characteristics (TA=25°C) Symbol Min , Current (mA) Reverse-Biased Voltage (V) PD - Ta PD - Tc 12 1.6 1.4 PD( W ), Power


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PDF HE6015 HJ772 HJ772 O-252 217oC 260oC 10sec Y2 MARKING
2005 - RSS070N05

Abstract: RG-106
Text: ) (6) 2 A A 1 *1 A W o C o C (5) (1) (2) (3) (4) *1 *2 (1) (2 , on a ceramic board Thermal resistance (Ta=25°C) Parameter Chanel to ambient Unit o C/ W


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PDF RSS070N05 RSS070N05 RG-106
1995 - TRANSISTOR S1A 64

Abstract: 03N06C AN7254 RLD03N06CLE RLD03N06CLESM RLP03N06CLE
Text: +5.5 UNITS V V V Self Limited 30 0.2 2 -55 to +175 W W /oC KV oC File Number 6-3 , Resistance Junction to Case RJC - - 5.0 oC/ W Thermal Resistance Junction to Ambient RJA TO-220 Package - - 80 oC/ W TO-251 and TO-252 Packages - - 100 oC/ W MIN , THERMAL RESISTANCE = HSTR DUTY CYCLE = DC HSTR = 0oC/ W HSTR = 1oC/ W HSTR = 2oC/ W 75 HSTR = 5oC/ W TJ = 175oC ILIM = 0.210A RJC = 5.0oC/ W 60 HSTR = 10oC/ W 45 30 HSTR = 25oC/ W 15


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PDF RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE O-220AB 150oC O-251AA RLD03N06CLESM tr-30 TRANSISTOR S1A 64 03N06C AN7254 RLD03N06CLE RLP03N06CLE
2006 - SP8K24

Abstract: No abstract text available
Text: V 20 V ±6.0 A ±24 A 1 A 24 A 2 W / TOTAL 1.4 W / ELEMENT o 150 C o -55 to +150 C


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PDF SP8K24 SP8K24
2006 - Not Available

Abstract: No abstract text available
Text: . mounted 751 pF o C/ W o C RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise


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PDF MIL-S-19500 350oC/10 DO-204AL DO-41) MIL-STD-750, 125oC
2003 - 1N4570A JANTX

Abstract: 1N4565 1N4584 1N4584A-1 DO-204AH DO-213AA JANTX1N4569AUR-1 JANTX1N4574A-1 JANTXV1N4574
Text: No file text available


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PDF 1N4565 1N4584A-1 DO-35 1N4575 1N4579A 1N4570A JANTX 1N4584 DO-204AH DO-213AA JANTX1N4569AUR-1 JANTX1N4574A-1 JANTXV1N4574
24CO2

Abstract: NJW1182FP1 NJW1182 QFP48-P1 1Vrms-100mVrms 3VE1
Text: L o w SRGL AinAout, Mode=Low, f=100Hz 2.0 4.0 6.0 dB e a l a e a l a 2 , H i g h 2 SR2GH2 AinBout, Mode=High, f=100Hz 4.5 6.5 8.5 dB L o w SR2GL , Slave Address) ( MSB LSB 1 0 0 0 0 0 1 R/ W D3 D2 R/ W =0: Receive Only R/ W =1: ·Select Address 00H01H02H03H04H05H06H00H Select Address BIT D7 D6


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PDF NJW1182 NJW1182FP1 QFP48-P1 500mV, 50ms/DIV 500ms/DIV 24CO2 NJW1182FP1 NJW1182 QFP48-P1 1Vrms-100mVrms 3VE1
2000 - G260-16

Abstract: MP02
Text: Max. Units 0.21 o C/ W halfwave 0.22 o C/ W 3 phase Surge (non-repetitive) forward current Max. dc IFSM Parameter 0.23 o C/ W Mounting torque = 6Nm with , resistance - case to heatsink per Diode Conditions C/ W Tvj Virtual junction temperature 150 , Impedance - (°C/ W ) 0.3 Rth(j-hs) 0.2 Rth(j-c) 0.1 0 0.001 0.010 0.100 Time - (s , ( W ) 400 180° Rectangular 180° Sine 120° Rectangular d.c. 350 300 60° Rectangular 250


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PDF DS5102-3 DS5102-4 MP02/260-16 MP02/260-14 MP02/260-12 MP02/260-10 150oC G260-16 MP02
2000 - RECTIFIER DIODE 1000A 2500V

Abstract: MP03 HB440
Text: 405000 A2s Max. Units 0.12 o halfwave 0.13 o C/ W 3 phase IFSM Max. dc Symbol 0.14 o C/ W Mounting torque = 5Nm with mounting compound 0.05 o , per Diode Thermal resistance - case to heatsink per Diode Conditions C/ W C/ W Tvj , - (°C/ W ) 0.15 d.c. 0.10 0.05 0 0.001 0.01 0.1 Time - (s) 1.0 10 Fig , °C) 5/10 MP03 XX 440 Series On-state power loss per device - ( W ) 800 d.c. 700 180


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PDF DS5106-2 DS5106-3 1250A MP03/440 150oC RECTIFIER DIODE 1000A 2500V MP03 HB440
2003 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 1N4565 1N4584A-1 DO-35 1N4575 1N4579A
JESD22-A114

Abstract: No abstract text available
Text: Vp VDS=50V IDS=36mA -1.0 Pout VDS=50V 120 - - W Drain Efficiency Power , Channel to Case - 1.1 1.4 Pinch-Off Voltage Output Power PW=200µsec, Duty 10% Measured w /CW at 45W PDC Edition 1.0 Sep. 2010 1 o C/ W EGN28B100IV-R High Voltage - High Power , , Pulse Width 200us , Duty 10% C/ W C/ W MTTF vs Pulse Width @Tc=75oC Rth vs Pulse Width @Tc=75oC , % MTTF [Hrs] Rth [oC/ W ] C/ W 0.8 0.6 Duty 25% 0.4 1.E+08 Duty 25% 1.E+07 1.E+06 1


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PDF EGN28B100IV-R 38dBm) EGN28B100IV-R JESD22-A114
2006 - RSS060P05

Abstract: RSS060
Text: to +150 Unit V V A A A A W o C o C (8) (7) (6) (5) 2 1 (1) (2 , Thermal resistance Parameter Chanel to ambient Symbol Rth(ch-a) * Limits 62.5 Unit o C/ W


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PDF RSS060P05 RSS060P05 RSS060
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