The Datasheet Archive

74bbfl51 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
453 optocoupler

Abstract: No abstract text available
Text: (2UALITY T E C H N O L O G I E S CORP S7E J > CNX71A/CNX72A M 74bbfl51 D 0 0 4 S 1 E TflM MQ1Y , Y T E C H N O L O G I E S CORP SYMBOL Optocoupler c* Cc CNX71A/CNX72A S7E ] > 74bbfl51 D D 4 , High-voltage optocouplers Ö U A L IT Y T E C H N O L O G I E S CO RP S7E D CNX71A/CNX72A 74bbfl51 G D D 4 , High-voltage optocouplers flUALITY T E C H N O L O G I E S CORP 57E » CNX71A/CNX72A 74bbfl51 DOQMS'Jb SET , optocouplers (3UALITY T E C H N O L O G I E S CO RP S7E D CNX71A/CNX72A 74bbfl51 O D O M S 1 !? 4bb M A T


OCR Scan
PDF CNX71Aand CNX72Aare OT229B CNX72A, CNX71A. -CNX71A CNX71A/CNX72A OT212. 74bbflSl 0DD4fl03 453 optocoupler
Transistor 2TY

Abstract: 2ty transistor Transistor+2TY .2ty transistor npn .2ty transistor
Text: Optocoupler (3U ALITY TECHNO LOGIES CORP 57E D ■74bbfl51 0 0 D 4 7 1 2 4fl3 Fig. 9 , . December 1988 SL5504 ÛUA L IT Y T E C H N O L O G I E S CORP S7E D ■74bbfl51 0 0 0 4 7 1 5 , 1988 SL5504 Optocoupler (2UALITY T E C H N O L O G I E S CORP S7E J > 74bbfl51 □ â , S7E D 74bbfl51 Ü D D 4 71 Û TTl ■ÛTY 7Z82712.1 10J Cb'c fpFI to2 10 Fig. 17 , O G I E S CO RP S7E D ■74bbfl51 □□□471*1 fl36 M f l T Y 0.1 Fig. 22 l B = 0


OCR Scan
PDF SL5504 OT212. 74bbflSl 0DD4fl03 SA048-2 Transistor 2TY 2ty transistor Transistor+2TY .2ty transistor npn .2ty transistor
Not Available

Abstract: No abstract text available
Text: S7E D PARAMETERS m 74bbfl51 00 04 74 5 ^2T ■ÛTY CONDITIONS MIN. TYP. MAX. UNIT , SL5582W/SL5583W S7E D 396 ■74bbfl51 0 0 0 4 7 4 b Abb H K S T Y Philips Semiconductors , 74bbfl51 G G G 4 7 4 7 7T2 « f l T Y Product specification Philips Semiconductors High voltage , ■74bbfl51 D Q 0 4 7 5 2 ObT M A T Y 7Z 24066 \ \ \ 10 102 103 104


OCR Scan
PDF SL5582W/SL5583W SL5582W SL5583W OT212. 74bbflSl 0DD4fl03
HLIK-1

Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP O ptoisolator Specifications _ 57E D 74bbfl51 000ME1E H ä TY H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H11K series consists o f a gallium -alum inum -arsenide, in frared em ittin g d , 57E D 74bbfl51 4513 ÖGS ÖTY _ Optoisolator Specifications H11K1, H11K2 Individual , °C) 268 (2UALITY TECHNOLOGIES CORP _ S7E D 74bbfl51 D0D421S b66 (3 T Y Optoisolator


OCR Scan
PDF 74bbfl51 000ME1E H11K1, H11K2 H11K1 H11K2 D0D421S HLIK-1
QPB804

Abstract: No abstract text available
Text: 74bbfl51 0[)Dfci3b5 3-101 OPB8Q4 NOTES: 1. DIMENSIONS ARE IN INCHES (mm.) 2. TOLERANCE IS  , . 3-102 74bbfl51 □ 00b>3b>b a o s lE = 100 fiA, Ee = 0 lF = 20 mA, lc = 0.25 mA


OCR Scan
PDF QPB804 OPB804 74bbfl51 QPB804
Transistor 2TY

Abstract: .2ty transistor npn
Text: /' October 1990 211 CNX48U ÛUALITY TECHNOLOGIES CORP 74bbfl51 G G G M S b ä bbâ I lûTY , Optocoupler DUALITY TECHNOLOGIES CORP 57E D 74bbfl51 □ 0 0 4 S b c 5 T 1 ■f l T Y J , Optocoupler ÛUALITY TECHNOLOGIES CORP 57E D 7 Z8 8 20 5 74bbfl51 DDD4S77 b7â ÖTY 1,5 , – 74bbfl51 OOOMflOl SflR ■Philips Semiconductors Optocouplers Package Outlines (4X) r W j


OCR Scan
PDF CNX48U 7Mhbfi51 E90700 0110b 804/VDE 86/HD 74bbfl51 OT212. 74bbflSl 0DD4fl03 Transistor 2TY .2ty transistor npn
Not Available

Abstract: No abstract text available
Text: on each part as a suffix letter to the part number. 4-58 74bbfl51 OOObSb'i 3flb â , – 4-59 MAN4900A SERIES 74bbfl51 Anode F Anode G No Pin Common Cathode No Pin Anode E Anode


OCR Scan
PDF 400-INCH MAN4900A MAN3600A/70A C1825 000bS71
Not Available

Abstract: No abstract text available
Text: ; VCC= 1 0 V Turn-off time to ff 5.5 10 ¡x S See Fig. 10. 1-74 ■I 74bbfl51 , O P T O E L E C T RO N I C S 4 ■■CNY17F-1 CNY17F-2 CNY17F-3 74bbfl51 000S133 b


OCR Scan
PDF CNY17F-1 CNY17F-2 CNY17F-3 CNY17 CNY17F1: CNY17F2: CNY17F3: E90700 ST1603A C1680
Not Available

Abstract: No abstract text available
Text: > 74bbfl51 0 0 0 4 7 b l 4N32 4N33 0 7 2 ■flTY 'C max. 100 mA Total power dissipation , ~| | 3 ■74bbfl51 DDG47b3 =145 H d T Y |-® - 0 +vcc t working voltage , CORP S7E mu <♦*) (4x) April 1991 454 D ■74bbfl51 OOOMflOl SflR â


OCR Scan
PDF E90700 0110B AC/450 57804/VDE 86/HD 195S4 74bbfl51 OT212. 74bbflSl 0DD4fl03
1AV3A

Abstract: No abstract text available
Text: Ö U AL IT Y TECHNOLOGIES CORP S7E P 74bbfl51 0 0 0 4 1 7 b OOfl ■ö T Y Optoisolator Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The HI 1AV series consists o f a gallium arsenide , TECHNOLOGIES CORP 57E D ■74bbfl51 0 0 0 4 1 7 ? 744 â , ÖTY ÛU AL IT Y TECHNOLOGIES CORP 57E D 74bbfl51 0QD417R Ô17 ■(2 T Y


OCR Scan
PDF 74bbfl51 H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A 1AV3A
CBC 184 transistor

Abstract: CNX35U Transistor 2TY CBC 184 c transistor
Text: 74bbfl51 00D4S37 T*tt IflTY Optocoupler 0 b = 0 ) (n o te l) Output/input DC current transfer ratio , circuit. S7E T > 74bbfl51 0004535 ‘ iEfl <3TY Fig. 3 Waveforms. December 1988 181 , . 192 December 1988 CNX35U CNX36U CNX39U * \ 74bbfl51 0004550 425 ■Optocouplers , ■74bbfl51 OOOMflOl SflR ■Philips Semiconductors Optocouplers Package Outlines


OCR Scan
PDF CNX35U CNX36U E90700 0110b 74bbfl51 OT212. 74bbflSl 0DD4fl03 CBC 184 transistor CNX35U Transistor 2TY CBC 184 c transistor
bt 44a

Abstract: Transistor 2TY npn photo transistor P042A
Text: Fig. 1 SOT90B. -7,62 max 8,3 max - S7E D 74bbfl51 0D0Mb75 76b Ü T Y Dimensions in mm , . December 1988 325 P040/44A DUALITY TECHNOLOGIES CORP 120 If (m A ) S7E D 74bbfl51 OODHb , P040/44A S7E D 74bbfl51 0D04bfl2 'Jib B I ö j y ÛUALITY TECHNOLOGIES CORP Fig. 13 V CB = 5 V; T , IT Y T E C H N O L O G I E S CORP S7E D Package Outlines 74bbfl51 OOOMflOl SflR mu


OCR Scan
PDF P040/44A 74bbflSl GDD4b74 OT90B P040/44A P040A, P042A, P043A, P044A 74bbfl51 bt 44a Transistor 2TY npn photo transistor P042A
Transistor 2TY

Abstract: No abstract text available
Text: October 1990 CNX38U Optocoupler DU AL IT Y T E C H N O L O G I E S CORP S7E D 74bbfl51 , S7E D 74bbfl51 D 0 D 4 5 b D 374 ■(2TY December 1988 203 CNX38U ÛUALITY TECH NO LO G , S7E ] > ■74bbfl51 0G045b3 0Û3 H Ú T Y RßEi Fig. 16 Iß = 0 ; Vqe = 5 V; Tamb = 25 °C , ) April 1991 454 ■74bbfl51 OOOMflOl SflR ■Philips Semiconductors Optocouplers


OCR Scan
PDF 74bbflSl CNX38U E90700 0110b 74bbfl51 OT212. 0DD4fl03 Transistor 2TY
Not Available

Abstract: No abstract text available
Text: Optocouplers y V (3UALITY T E C H N O L O G I E S CORP Fig. 2 Switching circuit. S7E D 74bbfl51 , ÛUALITY TECHNOLOGIES CORP ÛTY 74bbfl51 0 Q 0 4 b t b3fl i4 57E D 7Z82647 7Z82646 1000 , S7E D 74bbfl51 D0047D2 534 * ü T Y -5 0 50 100 150 Tam b<°C) Fig. 18 Tamb = 25


OCR Scan
PDF SL5500 SL5501 SL5511 OT212. MSA048-2
CNY17G-3

Abstract: CNY17G3
Text: ■74bbfl51 0GG4b2M 214 ■Ö T Y LIMITING VALUES In accordance with the Absolute Maximum , – 74bbfl51 0004b2S 150 ■Û T Y CLASSIFICATION CATEGORIES Tracking resistance KB-100/A , H N O L O G I E S CORP SYMBOL CNY17G/CNY17GF 57E D PARAMETER ■74bbfl51 D D G M bE h


OCR Scan
PDF CNY17G/CNY17GF E90700 BS415 BS7002 OT212. 74bbflSl 0DD4fl03 MSA048-2 CNY17G-3 CNY17G3
Not Available

Abstract: No abstract text available
Text: letter to the part number. 4-104 74bbfl51 ODDbbll 440 m 0.800-INCH SEVEN SEGMENT DISPLAYS , 50 DUTY CYCLE = % 74bbfl51 DOGbbia 213 100 C1193 Fig. 3. Max Peak Current vs. Duty


OCR Scan
PDF 800-INCH MAN8900 C1371 MAN8910 74bbfl51 C1193 C1702
Not Available

Abstract: No abstract text available
Text: : MAN6700 Series ■I 74bbfl51 FILTER Panelgraphic Red 60 Homalite 100-1605 000 LST3 bT5 , Intensity vs. Duty Cycle 74bbfl51 OQObSTh 304 C l 702 Fig. 5. Relative Luminous Intensity vs


OCR Scan
PDF 560-INCH MAN6700 MAN6600 C1244 74bbfl51
Not Available

Abstract: No abstract text available
Text: Emitter Resistance -50 -2 5 0 +25 T E M P -rc > 74bbfl51 +50 + 75 +100 C1247 , O - I ro 74bbfl51 000bl23 b5û 1-139 [sO PHOTOTRANSISTOR OPTOCOUPLERS , 0° to 70°C 1-140 74bbfl51 h FAN-OUT OF TO lOTTl LOAOS D00L124 ST4


OCR Scan
PDF MCT210 MCT210 MCT210â E90700) 74bbfl51 000bl23 D00L124
C1019

Abstract: C1018 C1022 Quality Technologies C1018 5V C1017 C1020 C1023 photo darlington sensor reflective photo sensor
Text: & 1 ; QUALITY TECHNOLOGIES 74bbfl51 D0Û3bl2 7 ■7W/-Ï3 REFLECTIVE OBJECT SENSOR , VOLTAGE -V C1018 Fig. 3. Io vs. Vce 2-16 (JUALITY TECHNOLOGIES CORP 27E D ■74bbfl51 00031,13


OCR Scan
PDF 74btiflSl 0003bl5 T-V/-73 C1019 C1018 C1022 Quality Technologies C1018 5V C1017 C1020 C1023 photo darlington sensor reflective photo sensor
Not Available

Abstract: No abstract text available
Text: Fig. 5. CTR vs. R BE (U nsaturated) Fig. 6. CTR vs. RBE (Saturated) 74bbfl51 OO Ob lB ? BT3 â , Waveforms 1-144 00 r be — BASE R E S IS T A N C E — (£1) 74bbfl51 OOOblSfl 13T


OCR Scan
PDF MCT2200 MCT2201 MCT2202 MCT2200, MCT2201 MCT2202 E90700 C2079 C1683 C1296A
transistor C2089

Abstract: h11aa2
Text: 74bbfl51 0005 130 1=11 S AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS INDIVIDUAL , €” mA Fig. 3. Input Current i/s. Output Current 74bbfl51 000S140 a m C2309 Fig. 2. Transfer


OCR Scan
PDF H11AA1 H11AA3 H11AA2 H11AA4 H11AAX C2089 C2303 74bbfl51 000S140 C2309 transistor C2089
Not Available

Abstract: No abstract text available
Text: (3UALITY T E CH N OL O GI E S CORP S7E ] > 74bbfl51 430b 55b I ÖTY European "Pro Electron" Registered T y p e s _ CNY32 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e CNY32 is a gallium arsenide, in frared em itting d iode co u p led with a silicon p h o to tra n sisto r in a low-cost plastic p ackage with lead spacing , GI E S CORP S7E D Hi 74bbfl51 0DD43G7 4T2 H ÖTY


OCR Scan
PDF 74bbfl51 CNY32 CNY32
Not Available

Abstract: No abstract text available
Text: /CNW85 DU AL IT Y T E C H N O L O G I E S CO RP S7E D ■74bbfl51 □ Q 0 4 4 c 12 TT3 M f , – 74bbfl51 ODOMM'IB T3T « f l T Y Philips Semiconductors Product specification Heavy duty , .20 Total power dissipation as a function of ambient temperature. April 1991 136 ■74bbfl51 â


OCR Scan
PDF CNW84/CNW85 DGD44flb OT212. 74bbflSl 0DD4fl03 MSA048-2
Not Available

Abstract: No abstract text available
Text: €˜ Collector current (continuous) . 100 mA tD erate 1.33 mW /°C above 25°C. 74bbfl51 , required for the collector current to decrease from 90% of its initial value to 10%. 74bbfl51 000b033


OCR Scan
PDF E90700 C1296A VCEat10 74bbfl51 000b033
TRIAC aeg

Abstract: M0C3011 MQC3010
Text: . 300 mW = Derate above 25°C . 4.0 mW/°C ■74bbfl51 0G0 , 74bbfl51 O O O b SS ? 'ill 2-57 MQC3009 MOC3010 MOC3011 MOC3Q12 -4 0 -2 0 0 20 40 60 80 100


OCR Scan
PDF MOC3009 MOC3010 MQC3011 MOC3Q12 MOC3009, MOC3010, MOC3011 MOC3012are MOC3011) E90700 TRIAC aeg M0C3011 MQC3010
Supplyframe Tracking Pixel