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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

722 smd transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - 30RF35

Abstract: VJ1206Y104KXB smd transistor equivalent table
Text: -135; BLF6G27LS-135 WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 - 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base , frequency range NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 2 , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics


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PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table
2008 - C5750X7R1H106M

Abstract: 30RF35
Text: LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 , BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 - 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base , (RoHS) BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 1.3 , -100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5


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PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100 C5750X7R1H106M 30RF35
2008 - transistor BV-1 501

Abstract: smd 501 transistor C5750X7R1H106M 30RF35 BLF6G38-50 BLF6G38LS-50 RF35 VJ1206Y104KXB
Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 - 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station , -50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor I Compliant to Directive 2002/95/EC , transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter , Semiconductors WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description Frame


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PDF BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 BLF6G38LS-50 transistor BV-1 501 smd 501 transistor C5750X7R1H106M 30RF35 RF35 VJ1206Y104KXB
722 smd transistor

Abstract: N-channel mos sot23
Text: MOS transistor in a SOT23 SMD package. QUICK REFERENCE DATA SYMBOL VDs V sD PARAMETERS , Philips Semiconductors Product specification N-channel enhancement mode MOS transistor , enhancement mode . . . . MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating , Philips Semiconductors Product specification N-channel enhancement mode MOS transistor THERMAL , BSH1Q1 MOS transistor CHARACTERISTICS Tj = 25 °C


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PDF BSH101 722 smd transistor N-channel mos sot23
2013 - BLF6G38S-25

Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , -25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = , -25 WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
2008 - smd transistor equivalent table

Abstract: smd transistor 3400 J412 - TRANSISTOR SMD BLF6G38S-25 RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BLF6G38-25 BDS3/3/4.6-4S2-Z
Text: LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor equivalent table smd transistor 3400 J412 - TRANSISTOR SMD RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BDS3/3/4.6-4S2-Z
2008 - TRANSISTOR j412

Abstract: J412 - TRANSISTOR SMD BLF6G38S-25
Text: Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 7.2.2 Graphs 001aah594 001aah595 , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 , 14 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD
2008 - transistor K 1352

Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB RF35 C4532X7R1H475M BLF6G27LS-135 BLF6G27-135 30RF35 722 smd transistor
Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 - 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless , transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz


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PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB RF35 C4532X7R1H475M 30RF35 722 smd transistor
2011 - Not Available

Abstract: No abstract text available
Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base , -100 NXP Semiconductors WiMAX power LDMOS transistor 1.3 Applications  RF power amplifiers for , of 13 BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 5 , transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz


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PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100
2011 - Not Available

Abstract: No abstract text available
Text: -100; BLF6G38LS-100 WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 , BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 - 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station , -100; BLF6G38LS-100 WiMAX power LDMOS transistor 1.3 Applications RF power amplifiers for base stations and , BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Symbol


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PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100
STTA2006M

Abstract: smd transistor p3
Text: OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR . ■HIGH FREQUENCY OPERATIONS. â , , non isolated SMD with copper tab DESCRIPTION The TURBOSWITCH is a very high performance series of , companion transistor , thus optimizing the overall performance in the end application. The way of , -2) (Fig. 2) ON : P4 Watts (Fig. 3) (Fig. 3 & 4) SWITCHING TRANSISTOR Fig. 1 : "FREEWHEEL" MODE. â , VR.IR.(1 -8) Turn-on losses: (in the transistor , due to the diode) r Vr x Irm2 x ( 3 + 2 x S) x F 6


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PDF STTA2006M associat9001000 0Qb0113 STTA2006M smd transistor p3
2011 - Not Available

Abstract: No abstract text available
Text: LDMOS transistor 7.2.2 DVB-T 001aao063 001aao064 17 Gp (dB) 16 -5 IMDshldr (dBc) 12 PAR (dB , BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 - 16 September 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver , transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2


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PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H
2011 - J2735

Abstract: DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414
Text: -500H NXP Semiconductors Power LDMOS transistor 7.2.2 DVB-T 001aao063 17 Gp (dB) IMDshldr , -500H Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.2.1 7.2.2 , BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 1 - 11 May 2011 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver


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PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H J2735 DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414
2011 - SMD transistor package code A64

Abstract: No abstract text available
Text: -10G WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 , BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 — 28 February 2011 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , reserved. 2 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 5


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PDF BLF6G27-10; BLF6G27-10G IS-95 ACPR885k ACPR1980k BLF6G27-10 SMD transistor package code A64
2010 - 10G SMD Transistor

Abstract: No abstract text available
Text: -10G WiMAX power LDMOS transistor 7.2.2 Graphs 001aaj351 001aaj352 16 EVM (%) 12 25 Gp (dB) 23 , LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 , BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 2 - 2 December 2010 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , -10; BLF6G27-10G WiMAX power LDMOS transistor 1.3 Applications RF power amplifiers for base stations and


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PDF BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 10G SMD Transistor
2009 - TRANSISTOR J601

Abstract: gp816 RF35 J2396 J249
Text: BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 7.2.2 Graphs 001aaj362 , LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 , BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 - 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , Substances (RoHS) BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 1.3


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PDF BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249
2009 - RF35

Abstract: No abstract text available
Text: BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 7.2.2 Graphs 001aaj351 , BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 - 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , Substances (RoHS) BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 1.3 , LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute


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PDF BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 BLF6G27-10G RF35
2013 - Not Available

Abstract: No abstract text available
Text: transistor 7.2.2 DVB-T 001aao063 001aao064 17 Gp (dB) 16 -5 IMDshldr (dBc) 12 PAR (dB) 8 PAR D , -500H; BLF6G15LS-500H Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.2.1 7.2.2 , BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 - 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver


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PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H
2010 - 30RF35

Abstract: BLF6G38-50 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB
Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 - 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station , WiMAX power LDMOS transistor 1.3 Applications RF power amplifiers for base stations and multicarrier , LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol , -50 NXP Semiconductors WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal


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PDF BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 30RF35 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB
2011 - RF35

Abstract: 10G SMD Transistor transistor 123
Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 - 28 February 2011 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , MHz frequency range. BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor , -10G NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Thermal , Semiconductors WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame


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PDF BLF6G27-10; BLF6G27-10G IS-95 ACPR885k ACPR1980k BLF6G27-10 RF35 10G SMD Transistor transistor 123
2013 - Not Available

Abstract: No abstract text available
Text: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 2 — 20 December 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base , range BLF8G09LS-400P(G)W NXP Semiconductors Power LDMOS transistor 2. Pinning information , Power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute , NXP Semiconductors Power LDMOS transistor 7. Test information 7.1 Ruggedness in class-AB


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PDF BLF8G09LS-400PW; BLF8G09LS-400PGW BLF8G09LS-400PW 8G09LS-400PGW
2014 - Not Available

Abstract: No abstract text available
Text: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 3 — 24 March 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base , range BLF8G09LS-400P(G)W NXP Semiconductors Power LDMOS transistor 2. Pinning information , . All rights reserved. 2 of 17 BLF8G09LS-400P(G)W NXP Semiconductors Power LDMOS transistor , -400P(G)W NXP Semiconductors Power LDMOS transistor 7. Test information 7.1 Ruggedness in


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PDF BLF8G09LS-400PW; BLF8G09LS-400PGW BLF8G09LS-400PW 8G09LS-400PGW
2010 - Not Available

Abstract: No abstract text available
Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station , -50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 1.3 Applications ̈ RF power , reserved. 2 of 13 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 5 , WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description Frame duration = 5


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PDF BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50
1996 - 358 SMD transistor

Abstract: No abstract text available
Text: transistor FEATURES · SMD encapsulation · Gold metallization ensures excellent reliability. APPLICATIONS · , DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 2 3 e , DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification , specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System , soldering point of the collector pin. 2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1


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PDF BLT80 BLT80 OT223 MAM043 cir2724825 SCDS48 127061/1200/02/pp12 771-BLT80-T/R 358 SMD transistor
bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 TP2222A transistor transistor 2N5952
Text: cc Quad Transistor Array Dual Complementary Pair Dual Complementary Pair B E E B 2N2222A NPN TMPT2222A TP2222A TPQ2222A c* c Quad Transistor Array Quad Transistor Array B E E B 2N2369 2N2907 PNP TPQ2369 TMPT2907 TP2907 TPQ2907 TPQ6002 TPQ6502 cc Quad Transistor Array Dual , G St G Gt G Quad Transistor Array 2N3414 2N3415 2N3416 2N3417 2N3819 2N3820 NPN NPN NPN NPN , 2N3904 TMPT3904 TPQ3904 TPQ6700 Gt c c- Quad Transistor Array Dual Complementary Pair E B E


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PDF 1N914 1N4148 1N4150 1N4565 1N4565A 1N4566 1N4566A 1N4570 1N4570A 1N4571 bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 TP2222A transistor transistor 2N5952
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