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7110flEb Datasheets Context Search

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international rectifier NE 22

Abstract: AN176 compressor ALC circuit diagram of hearing aid compandor hearing aids sa575 NE575AD NE575AN SA575AD
Text: INTERNATIONAL fc.DE J> m 7110flEb 00S353A b2S «PHIN Philips Semiconductors RF Communications Products Product , , 1kHz -0.5 0.5 -1.0 1.0 dB October 12,1992 197 PHILIPS INTERNATIONAL fc.DE J> m 7110flEb 00S353A , October 12,1992 199 PHILIPS INTERNATIONAL fc.DE J> m 7110flEb 00S353A b2S «PHIN Philips Semiconductors , INTERNATIONAL fc.DE J> m 7110flEb 00S353A b2S «PHIN Philips Semiconductors RF Communications Products Product , /ALC Demo Board October 12,1992 201 PHILIPS INTERNATIONAL fc.DE J> m 7110flEb 00S353A b2S «PHIN


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PDF NE/SA575A NE/SA575A NE/SA575 100mVRMs 7110flEb 00S353A 20-20kHt) international rectifier NE 22 AN176 compressor ALC circuit diagram of hearing aid compandor hearing aids sa575 NE575AD NE575AN SA575AD
T1P29

Abstract: TIP30 TIP3 TIP30B 82S2
Text: TIP30; A TIP30B; C philips international SbE D m 7110flEb OCm34fciO 5TS «PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS 7-33-ì^ PNP silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. NPN complements are T1P29 series. QUICK REFERENCE DATA TIP30 A B c Collector-base voltage -vCBO max. 80 100 , Absolute Maximum System (IEC 134J ShE D 7110flEb 0043Mbl 1ST I T-33-19 IPHIN = TIP30 A B C


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PDF TIP30; TIP30B; 7110flEb OCm34fciO T1P29 TIP30 7Z82166 TIP3 TIP30B 82S2
BU2508D

Abstract: No abstract text available
Text: December 1995 3 Rev 1.200 7110flEb OO^flOMb 3Mb ■This Material Copyrighted By Its Respective , . II Extension for repetitive pulse operation. December 1995 5 Rev 1.200 ■7110flEb □OTflOMfl in


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PDF BU2508D 7110flEb 711002b BU2508D
transistor 1BT

Abstract: BDT62C PHILIPS npn 1bt BDT63B
Text: BDT63; 63A BDT63B; 63C _ A v _ PHILIPS "INTERNATIONAL" StEB 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; T0-220 plastic envelope. P-N-P complements are BDT62, BDT62A , SbE D t" 33~29 7110flEb 0 0 4 3 2 b 3 1BT PHIN 10 -1 10 tp (ms) 10 1 10


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PDF BDT63; BDT63B; 7110flEb T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T-33-29 transistor 1BT BDT62C PHILIPS npn 1bt BDT63B
74HL33646D

Abstract: 74HL33646DB 74HL33646PW D100
Text: 7110flEb 01007e]? b01 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors , WAVEFORMS (Continued) 7110flEb 0100fl03 735 1996 Feb This Material Copyrighted By Its Respective


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PDF 74HL33646 74HL33646 74HL33646D 74HL33646DB 74HL33646PW D100
BF0232

Abstract: SOT128 X3A-BFQ234 BFQ232 BFQ235 BFQ236
Text: Philips Semiconductors Product specification NPN 1 GHz video transistor crystal TSl^O PHILIPS INTERNATIONAL DESCRIPTION NPN crystal used In BFQ232(A) (SOT32), BFQ235(A) (SOT128) and BFQ236(A) (SOT223). Crystals are supplied as whole wafer, fully tested but unsawn. ELEMENT LAYOUT Active area: 10 urn around metallization pattern. Fig.1 X3A-BFQ234 crystal. X3A-BFQ234 SbE D 7110flEb DÜ4bDn 2T5 IPHIN MECHANICAL DATA Crystal Top metallization Au 1.15 urn Back metallization AuAs 1.5 nm


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PDF BFQ232 BFQ235 OT128) BFQ236 OT223) X3A-BFQ234 X3A-BFQ234 7110flEb URV-3-5-52/733 BF0232 SOT128
Data Display DL 216

Abstract: philips LTN111 LTN111R-10 philips LTN111R-10 BF 195 pin configuration display LCD 70 pin configuration
Text: INTERNATIONAL Philips Com portents bDE ì > 7110flEb GQS7113 2^0 « P H I N Product specification , INTERNATIONAL Philips Components bOE T > 7110flEb DOSVllT 70=j H P H I N Product specification


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PDF 7110ABb LTN111 LTN111 16-character, 7110flEb 7Z9S509 711Qfl2b Data Display DL 216 philips LTN111 LTN111R-10 philips LTN111R-10 BF 195 pin configuration display LCD 70 pin configuration
BV722

Abstract: BY723 Q04G533 Cathode indicated by blue band diode Cathode indicated by blue band BY722 BY724 sod BLUE BAND
Text: Manufacturer BY722 SbE D BY723 BY724 PHILIPS INTERNATIONAL SbE ]> * RATINGS 7110flEb 00MDS3M 3GT HIPHIN


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PDF 711002b Q04G533 BY722 BY723 BY724 BY722 BY723 BV722 Cathode indicated by blue band diode Cathode indicated by blue band BY724 sod BLUE BAND
smd code marking sot23

Abstract: O25 sot23 BBY42
Text: improper use or sale. 1996 May 03 7110flEb D3.D53T4 Ô25 This Material Copyrighted By Its Respective


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PDF BBY42 BBY42 7110flEb D53T4 smd code marking sot23 O25 sot23
n5460

Abstract: 2N5460 N5462 P-Channel JFETs 2n5462 2N5461 CONFIGURATION 2N5461 Philips MBB
Text: Semiconductors ■7110flEb 00b60^3 Mb 6 ■PHIN Preliminary specification P-channel J-FETs 2N5460/5461/5462


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PDF 2N5460/5461/5462 7110fl2ti N5460/5461/5462 2N5460 2N5461 N5462 2N5462 n5460 P-Channel JFETs CONFIGURATION 2N5461 Philips MBB
BUK443

Abstract: BUK443-60A BUK443-60B
Text: INTERNATIONAL Philips Semiconductors b5E D S 7110flEb D0b3^53 4b3 ■PHIN Product Specification PowerMOS , ); parameter D = t/T March 1993 212 PHILIPS INTERNATIONAL Philips Semiconductors LSE T> B 7110flEb ODbB^SM 3TT


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PDF BUK443-60A/B OT186 -ID/100 BUK443 BUK443-60A BUK443-60B
12 pin 4digit 7 segment display

Abstract: glass lcd multimeter LCD 7 segment display with 13 pins 4-DIGIT 7-SEGMENT LTD242R-12 Philips 3.5 digit 7 segment lcd display LTD242R-22 4 digit 7 segment lcd display 40 pin LTD242F-22 40 PIN 4 digit lcd display
Text: PHILIPS INTERNATIONAL bOE ì> m 7110flEb 0D570ÔM bbT «PHIN LTD242 T-4Í-3Z Liquid crystal display DEVICE DESCRIPTION The LTD242 is a 4-digit, 7-segment multi-function LCD. Typical applications include 24 hr. clocks, counters and industrial instruments requiring a large display. DISPLAY MODE scale 1:1 OOO o O.O.-O.U S- Fig.1 Multimeter display. TYPE DEPENDENT CHARACTERISTICS (1) TYPE ILLUMINATION CONNECTION RELIABILITY FAMILY (2) OPERATING MODE METHOD GRADE CHARACTERISTICS VOLTAGE (V


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PDF 7110flEb 0D570Ã LTD242 LTD242R-12 LTD242R-22 LTD242F-22 LTD242F-22 12 pin 4digit 7 segment display glass lcd multimeter LCD 7 segment display with 13 pins 4-DIGIT 7-SEGMENT Philips 3.5 digit 7 segment lcd display 4 digit 7 segment lcd display 40 pin 40 PIN 4 digit lcd display
LTD321R-12

Abstract: LTD321 panel-meter
Text: Material Copyrighted By Its Respective Manufacturer PHILIPS INTERNATIONAL bOE T> m 7110flEb 0D57103 341


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PDF LTD321 711005b LTD321 LTD3217 LTD321R-12 LTD321R-12 panel-meter
PPC5001T

Abstract: PQC5001T
Text: 7110flEb 00MbMS3 EH? HIPHIN Dimensions in mm Fig. 1b FO 85, PQC5001T marking code = 383 Pinning: 1 =


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PDF 7-33-Q5 PPC5001T PQC5001T 711Dfl2b 004bi PQC5001T T-33-05 711002b
MPS6522

Abstract: MPS6523 MPS6520 MPS6521
Text: ;-VCE = 5V; RS= 10kS2;f = 10 Hz to 10 kHz F 7110flEb ODMaSQS 313 HIPHIN Maximum System {I EC 134


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PDF MPS6522 MPS6523 711002b 00M25D4 -P29-Z/ MPS6520 MPS6521. 10juA 10kS2 7110flEb MPS6523 MPS6521
74LV04

Abstract: 74LV04D 74LV04DB 74LV04N 74LV04PW SWCC
Text: 1994 7110flEb 00?snb 2ÖM Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips


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PDF 74LV04 74HC/HCT04. 7110flEb 74LV04D 74LV04DB 74LV04N 74LV04PW SWCC
MSA035

Abstract: BFQ226 hh sot223 NPN, Si, POWER TRANSISTOR, PLASTIC
Text: ; typical values. 1996 Sep 04 4 ■7110flEb OlOfiVfi^ Sb3 ■This Material Copyrighted By


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PDF BFQ226 OT223 OT223. MBG495 7110flEb MSA035 711Dfl2b BFQ226 hh sot223 NPN, Si, POWER TRANSISTOR, PLASTIC
BAS45L

Abstract: S18B
Text: Copyrighted By Its Respective Manufacturer 5bE D m 7110flEb 00M01ÔÔ TS7 «PHIN _ bAS45L j| T


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PDF BAS45L T-07-1 BAS45L T-07-15 S18B
crystal PHILIPS

Abstract: by 028 x200 LTE42008R OP214 PTB23001X roe eg aeg power base 60 b 40/085/philips 40/085/aeg power base 60 b
Text: ; VCE = 15 V; lc = 70 mA; Tamb = 25 °C; Zq = 50 £2 OP214 7110flEb Q04b3Ti THfi «PHIN f (GHz) sâ


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PDF OP214 711062b 3-5-52/E crystal PHILIPS by 028 x200 LTE42008R OP214 PTB23001X roe eg aeg power base 60 b 40/085/philips 40/085/aeg power base 60 b
Y51 h

Abstract: y51 h 120
Text: PHILIPS INTERNATIONAL Philips Components bOE ] > 7110flEb 0037024 1*JS PHIN Product


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PDF 711002b Q057G21 LTD132 LTD132 LTD132R-11 7110flEb LTD132R-11 Y51 h y51 h 120
fet n-channel pin configuration

Abstract: transistor 537 b 360 DMOSFET Silicon N-Channel Junction FET sot23 vertical mosfet BSS138 MBB180
Text: By Its Respective Manufacturer ■7110flEb DDbTflT? M73 ■PHIN Philips Semiconductors Preliminary


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PDF BSS138 OT223 MBB180 fet n-channel pin configuration transistor 537 b 360 DMOSFET Silicon N-Channel Junction FET sot23 vertical mosfet BSS138 MBB180
Not Available

Abstract: No abstract text available
Text: Components bQE D 7110flEb DGS7G7b ST3 « P H I N Product specification Liquid crystal display


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PDF GDS7D73 LTD234 LTD234 16-digit, LTD234R-21 7110flEb LTD234R-21
BY705

Abstract: BY706
Text: 5bE D 7110flEb 0G4O5O5 SDT «PHIN BY705 BY706 PHILIPS INTERNATIONAL SbE ]> SILICON EHT SOFT-RECOVERY RECTIFIER DIODES Öl-Ii EHT rectifier diodes in glass envelopes intended for use in general purpose high-voltage applications. The devices feature non-snap-off characteristics. Because of the small envelope, the diodes should be used in a suitable insulating medium (resin, oil or special arrangements in test cases). QUICK REFERENCE DATA BY705 BY706 Working reverse voltage VRW max. 4.0 5.0 Repetitive


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PDF 7110flEb BY705 BY706 BY706
Not Available

Abstract: No abstract text available
Text: – 7110flEb 0101120 335 â–


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PDF BAT18 7110flEb
74LVC02

Abstract: 74LVC02D 74LVC02DB 74LVC02PW
Text: Open 2 • Vcc GND Fig. 6 Load circuitry for switching times. 1996 Feb m 7110fleb D100474 3bl 3


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PDF 74LVC02 74LVC02 7110fleb D100474 74LVC02D 74LVC02DB 74LVC02PW
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