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BD204

Abstract: box78 BD202 BDX78 philips BDX77 BDX78 BD201 BD203 bd202 philips
Text: -33-21 711005b 0042817 &5& M IPHIN Maximum System (1EC 134) BD202 max. max. max. max. max. max. max. max. 60 , BDX78 711005b DDMSÖSO 342 MPHIN. 1 tp (s) 10 Fig. 5 Pulse power rating chart. IO2 MV 10 , philips international 5bE D T-33-21 711005b 0042Ô53 DS1 ¡PHIN 20 fT (MHz) 15 10 100 -IB (mA


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PDF BD204 BDX78 711DflEb BD201, BD203, BDX77 BD202 BD204 O-220. box78 BDX78 philips BDX78 BD201 BD203 bd202 philips
common base amplifier circuit designing

Abstract: RX2731B90W
Text: RX2731B90W PHILIPS INTERNATIONAL MECHANICAL DATA Fig, 1 FO-125A. 5bE D T—33—15 711005b DQ4bS31 G44 , PHILIPS INTERNATIONAL T—33—15 RX2731B90W SbE D 711005b 0D4bS3S TAG ÎPHIN" (W) 100 150 200 , €”33—15 RX2731B90W PHILIPS INTERNATIONAL SbE D ■711005b 0D4b534 ÔS3 BiPHIN Fig. 5 Input and optimum load


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PDF T-33- RX2731B90W 711Dfi2b D04bS3D 711005b 0D4b534 common base amplifier circuit designing RX2731B90W
BD131

Abstract: D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132
Text: BD131 PHILIPS INTERNATIONAL SbE D ■711005b Q0427faD 04ö HPHIN -T'33-07 SILICON PLANAR EPITAXIAL POWER TRANSISTOR n-p-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-n-p complement is BD132. QUICK REFERENCE DATA Collector-base voltage (open emitter) vCBO max , 5bE D 711005b 0Q42?bl TflM HPHIN Limiting values in accordance with the Absolute Maximum System , Copyrighted By Philips Semiconductors. BD131 philips international 40 30 20 10 SbE D ■711005b QQHH?b7 MTH


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PDF BD131 711005b Q0427faD OT-32 BD132. O-126 OT-32) D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132
bux99

Abstract: No abstract text available
Text: philips international MSE D Q 711005b 0031S25 0 BIPHIN bux99 T- 33-0 7 SILICON TRIPLE DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated ripn power transistor in a TO-126 envelope, intended for use in fast switching applications. QUICK REFERENCE DATA Collector-emitter voltage peak value; Vqe = 0 VCESM max. 730 V Collector-emitter voltage, open base VCEO max. 300 V , Manufacturer II PHILIPS INTERNATIONAL bux99 Jl 4SE D 711005b 0Q31E2Ô b E3PHIN T-33 - O^ 104 (mA) 103


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PDF 711005b 0031S25 bux99 O-126 O-126. meta250 0Q31E2Ã bux99
2N5089

Abstract: 2N5087 2N5086
Text: 2N5086 2N5087 PHILIPS INTERNATIONAL SbE » 711005b D0M2t.74 751 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS T-Z^Zf P-N-P small-signal transistors in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5088/2N5089. QUICK REFERENCE DATA Collector-emitter voltage (open base) Collector-base voltage {open emitter) Collector current (d.c.) Totat power , _QM^no-7 PHILIPS INTERNATIONAL SbE D 711005b 0Q42b7b SEM ■P HIN Noise figure at -Ve E = 5 V; Tamb =


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PDF 2N5086 2N5087 711005b 2N5088/2N5089. 2N5086 T-29-21 2N5089 2N5087
BSS68

Abstract: WF VQE 12 WF VQE 11 E
Text: Limiting values in accordance with the Absolute Maximum System (IEC 134) 5bE D ■711005b OCmaaST 7T2 â , philips international SbE D ■711005b 00itE3bl 3SD MPHIN T—3 7—11 100 T, (°C) 150 Fig. 4. 484


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PDF BSS68 00M23SÃ BSS68 711005b 00itE3bl WF VQE 12 WF VQE 11 E
BDT65

Abstract: bdt65c bdt64
Text: SbE D 711005b 0043275 * SI «IPHIN r- T-33-31 Fig. 2 Circuit diagram. R1 typ. 3 , BDT64;- 64A BDT64B; 64C 5bE » 711005b 004357Ö bbO [P H I N PHILIPS INTERNATIONAL T , October 1979 Silicon Darlington power transistors T-33- 31 5bE ] > 711005b BDT64; 64A BPT64B


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PDF BDT64 BDT64B; 711002b T0-220 BDT65, BDT65A, BDT65B BDT65C. 711D62b BDT65 bdt65c
BC808

Abstract: BC817R code marking 5Cp sot-23 BC807 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC817
Text: 711005b 00bfl405 755 HPHIN BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package for use in driver and output stages of aufio amplifiers in thick and thin-film hybrid circuits. N-P-N complements are BC817; R and BC818;R respectively. QUICK REFERENCE DATA Transition frequency at f = 100 MHz -lc= 10mA;-VCE = 5 V BC807 BC808 Collector-emitter voltage (Vgg = 0) -VCES max , Material Copyrighted By Philips Semiconductors. ■711005b ODbflMÛ? 525 Silicon planar epitaxial


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PDF 711005b 00bfl405 BC807 BC808 OT-23 BC817; BC818 BC807 BC808 OT-23. BC817R code marking 5Cp sot-23 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC817
BY707

Abstract: BY709 BY708 BY707 diode 80t120
Text: SLE ]> 711005b ODMOStH ISM ■PHIN BY707 BY708 BY709 PHILIPS INTERNATIONAL SbE D nmwauaMBki i N ~T-Ol>-(7 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODES* E.H.T. rectifier diodes in glass envelopes intended for use in high-voltage applications such as the highvoltage supply of television receivers and monitors. The devices feature non-snap-off characteristics. Because of the small envelope, the , PHILIPS INTERNATIONAL RATINGS SbE D SbE 711005b 00M051Q «17b «HI J, U UL 111 UU'PUJUB «TU' PHIN


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PDF 711005b BY707 BY708 BY709 BY707 Reverse4D511 BY709 BY708 BY707 diode 80t120
BD934

Abstract: B0937 B0941 BD937 B0939 BD941 BD934 philips BD933 IEC134 c 939
Text: _ PHILIPS INTERNATIONAL SbE D 10 MV M| 10 _LA 711005b 0043040 Obi 7Z82178 IPHIN , PHILIPS INTERNATIONAL CEsat (mV) ShE T> T-33-09 711005b □0'43Gl4cl TTfl BIPHIN lR (mA) Fig. 7


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PDF BD933; BD937 BD941 7110fl2b 0043D44 BD934; BD933 T-33-09 BD937; BD934 B0937 B0941 B0939 BD941 BD934 philips IEC134 c 939
BY627

Abstract: 3ALF IEC134 marking 0-115
Text: – 711005b 0aMDSD3 73b Controlled avalanche rectifier diode IPHIN BY627 PHILIPS INTERNATIONAL SbE D , Material Copyrighted By Its Respective Manufacturer SbE » ■711005b DQ40SDM b?S BIPHIN BY627 T—Olâ


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PDF 711DflSb 711005b DQ40SDM BY627 BY627 3ALF IEC134 marking 0-115
b0725

Abstract: B0719 BD721 TRANSISTOR L 287 A b0721 BD723 BD439 BD719 BD720 BD725
Text: SbE T> ratings Limiting values in accordance with the Absolute Maximum System (IEC 134) 711005b , T-33-7] 711005b CJOMS'W HPHIN Fig. 3 Safe Operating Area, T,^ = 25 °C. (D ptotmax line- (2


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PDF BD719 BD721 BD723 BD725 7110fl2b 0042cnb BD439. BD720; BD726. b0725 B0719 BD721 TRANSISTOR L 287 A b0721 BD439 BD720 BD725
RZ2731B48W

Abstract: USA104 tRANSISTOR 2.7 3.1 3.5 GHZ cw
Text: INTERNATIONAL MECHANICAL DATA SbE D 711005b G0MbS73 ST3 HPHIN Dimensions in mm - 24 ma* '7 3 seating pons , microwave power transistor PHILIPS INTERNATIONAL SbE D RZ2731B48W 711005b 004bS77 14e! «IPHIN Fig


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PDF RZ2731B48W 4L572 T-33-13 711005b 004bS77 RZ2731B48W USA104 tRANSISTOR 2.7 3.1 3.5 GHZ cw
BD329/BD330

Abstract: BD329 BD330
Text: (A) 10" 10-2 SbE D T-33-07 711005b 0045073 bfl? I IPHIN 10 VCE (V) I ' ' ' , Manufacturer BD329 PHILIPS INTERNATIONAL 5bE D T-33-07 711005b ÜÜM5Ö77 BSE «PHIN - 164 August 1975


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PDF BD329 OT-32 BD330. O-126 OT-32) T-33-07 711005b BD329/BD330 BD329 BD330
TIP2955

Abstract: TIP2955 NPN power transistor transistor PNP TIP2955 TIP3055 circuit use tip2955
Text: Material Copyrighted By Its Respective Manufacturer TIP2955 5bE ]> 711005b PHILIPS INTERNATIONAL , Manufacturer TIP2955 PHILIPS INTERNATIONAL 100 SbE D ■711005b ODMBbOl 51b MPHIN 7Z81019 -'c (A) 10 0


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PDF TIP2955 OT-93 TIP3055. 711002b 0043fciD2 TIP2955 TIP2955 NPN power transistor transistor PNP TIP2955 TIP3055 circuit use tip2955
TDA7072

Abstract: 1327 Servo VP21
Text: DEVELOPMENT DATA PHILIPS INTERNATIONAL This data sheet contains advance information and specifications are subject to change without notice. _TDA7072 /- sz'ts-^ O 5DE » ■711005b 0Q3332Ô 016 HPHIN — SINGLE POWER DRIVER GENERAL DESCRIPTION The TDA7072 is a single power driver circuit in a Bridge-Tied-Load (BTL) configuration and is intended for use as a power driver in servo systems with a single , dB fh - 1.5 - MHz PACKAGE OUTLINE 8-lead DIL;plastic (SOT97). SDE D ■711005b 003332^ T54 «PHIN


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PDF TDA7072 711005b 0Q3332Ã TDA7072 711Qflc DD33333 GG3333M 1327 Servo VP21
2N2894A

Abstract: TRANSISTOR LC80 ic 741 by philips 7ZS6554
Text: Preliminary specification Silicon switching transistor 2N2894A PHILIPS INTERNATIONAL 5L.E D ■711005b , PHILIPS INTERNATIONAL 5bE D ■711005b OOMEbl? TTb ■PHIN SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT


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PDF 711DflSb 0042L 2N2894A PINNING-TO-18 2N2894A T-35-07 TRANSISTOR LC80 ic 741 by philips 7ZS6554
T1P31

Abstract: transistor tip31 TIP31 TIP31 NPN Transistor TIP32 PNP Transistor TIP31B TIP32 tip31 PHILIPS u043
Text: INTERNATIONAL 5bE T> 711005b 004347? SIb ÜPHIN T-33-11 Fig. 4 Safe Operating Area; Tmb = 25 °C. I Region , TIP31B; C sbe ]> zth j-mb (K/W) 10 -2 711005b 0043^470 422 ■PHIN 7z82908 tot (W) 40 20 5 s


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PDF TIP31 TIP31B; 711002b TIP32 g0434Ã 7z82912 T1P31 transistor tip31 TIP31 TIP31 NPN Transistor TIP32 PNP Transistor TIP31B tip31 PHILIPS u043
TIP31A

Abstract: No abstract text available
Text: INTERNATIONAL RATINGS SbE d m 711005b 0DM3H7S 713 IPHIN: T-33-n TIP31 A 100 60 5 3 5 1 40 - 6 5 t o + , 1981 Silicon epitaxial base power transistors TIP31; A TIP31B; C SbE D 711005b 004347A 422 M P


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PDF TIP31 TIP31B; 711002b G0143M7M TIP32 TIP31 04347A 7Z82908 TIP31A
BD947F

Abstract: BD948F BD943F BD944F BD946F 948F
Text: BD948F PHILIPS INTERNATIONAL 100 (A) 10 SbE P T-33-19 711005b DO M 30^5 Tflâ HPHIN 7Z21656.1 , INTERNATIONAL 104 SbE D ■711005b D0M3QT7 750 MPHIN 7221 sa T-33-19 l r Fig.6 Collector-emitter


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PDF BD944F BD948F 7110fl2b 0043CHB OT186 BD943F, BD945Fand BD947F. BD946F BD947F BD948F BD943F 948F
2n4391

Abstract: 2N4393 2N4392 17Z6 IEC 439-3
Text:  711005b 0DböD?M SDb «PHIN 2N4391 to 4393 N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes with the gate connected to the case. The transistors are intended for low power, chopper or switching, application in industrial service. QUICK REFERENCE DATA Drain-source voltage Total power dissipation up to Tcase = 25 °C Drain , This Material Copyrighted By Its Respective Manufacturer 711005b DDb6D7ti 36T ■PHIN


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PDF 711005b 2N4391 711002b 2N4392 2N4393 2N4393 17Z6 IEC 439-3
bdv91-bdv93

Abstract: 60n20 BDV92 BDV94 BDV95 BDV96 BDV91 transistor BDV95 BDV93
Text: BDV95 SbE J> 711005b 0DM3M07 175 1PHIN KATINGS T-33-A3 Limiting values in accordance with the , Respective Manufacturer BDV91 BDV93 BDVQfi PHILIPS INTERNATIONAL SbE D T-33-13 711005b DDMBmi bT3 MPHIN


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PDF BDV91 BDV93 BDV95 711Gfl2b 004340b T-33-/3 OT-93 BDV92, BDV94 BDV96. bdv91-bdv93 60n20 BDV92 BDV95 BDV96 BDV91 transistor BDV95 BDV93
TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

Abstract: TIP125 TIP127 of TIP122 435B IEC134 TIP120 TIP121 TIP122 TIP126
Text: D 711005b 0043Sb«ì 3T0 fPHlN T—33—21 Fig. 2. R1 typ. 4kfi R2 typ. 80 il RATINGS , TIP127 PHILIPS INTERNATIONAL 100 SbE D ■711005b 0043571 TST MPHIN 7Z81018 T-33-21 100 -VCE(V


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PDF TIP125 TIP126 TIP127 435bfl T0-220 TIP120, TIP121 TIP122. TIP126 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT TIP127 of TIP122 435B IEC134 TIP120 TIP122
BSS61

Abstract: BSS60 004778 BSS50 BSS51 BSS52 BSS62 IEC134
Text: Copyrighted By Its Respective Manufacturer BSS60 to 62 PHILIPS INTERNATIONAL 5bE D 711005b GÜM2353 5à , BSS60 to 62 PHILIPS INTERNATIONAL 5t.E T> T-37-29 711005b 0QM53S7 TST HPHIN 10 (mA) 10' 10 0,5


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PDF BSS60 00H53SD T-37-2-1 BSS50, BSS51 BSS52. BSS61 BSS62 BSS61 004778 BSS50 BSS52 BSS62 IEC134
Not Available

Abstract: No abstract text available
Text: BD644F;646F BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b 0042^54 bDb M P H I N T -33~ 3j SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA BD644F Collector-base voltage (open emitter) Collector-emitter voltage (open , BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b GGMS'iS'l nfi P H I N : T-33-31 7Z81018


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PDF BD644F BD648F; BD652F 711005b OT186 BD643F, BD645F, BD647F, BD649F BD651F.
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