The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
IXFT26N60P IXYS Corporation Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
IGD06N60TATMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, D-PAK, 3 PIN
IXGH36N60B3C1 IXYS Corporation Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
IRFIB6N60APBF Vishay Siliconix Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3
IXFP16N60P3 IXYS Corporation Power Field-Effect Transistor, 16A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
IGP06N60TXKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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  You can filter table by choosing multiple options from dropdownShowing 76 results of 168
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
6N-60 Aeroflex / Inmet Richardson RFPD - $48.69 $45.13
6N-60F Aeroflex / Inmet Richardson RFPD - $73.69 $70.13
6N-60M Aeroflex / Inmet Richardson RFPD - $73.69 $70.13
D7C0106N-60 Electroswitch Electronic Products Allied Electronics & Automation - $68.27 $64.14
D7C0106N-60 Electroswitch Electronic Products Sager - - -
D7C0206N-60 Electroswitch Electronic Products Sager - - -
D7C0306N-60 Electro Switch Corporation Master Electronics 2 $154.52 $148.57
D7C0406N-60 Electroswitch Electronic Products Sager - - -
D7C0506N-60 Electroswitch Electronic Products Sager - - -
FCA16N60N ON Semiconductor Future Electronics - $3.25 $2.88
FCA76N60N Fairchild Semiconductor Corporation Rochester Electronics 1,282 $17.20 $13.97
FCPF36N60NT ON Semiconductor Chip1Stop 1,000 $6.07 $6.07
FCPF36N60NT Fairchild Semiconductor Corporation Rochester Electronics 3,000 $7.84 $6.37
FQI6N60CTU Fairchild Semiconductor Corporation Rochester Electronics 1,844 $0.94 $0.77
FQP6N60C Fairchild Semiconductor Corporation Bristol Electronics 50 - -
GWS6N60-SP Great Wall Semiconductor Bristol Electronics 1,185 $0.94 $0.26
HI1206N601R-10 LAIRD PLC Sager - - -
IGD06N60TATMA1 Infineon Technologies AG Schukat electronic - €1.25 €0.33
IGD06N60TATMA1 Infineon Technologies AG Farnell element14 2,701 £0.79 £0.61
IGD06N60TATMA1 Infineon Technologies AG Newark element14 2,681 $1.10 $0.50
IGD06N60TATMA1 Infineon Technologies AG element14 Asia-Pacific 2,681 $1.37 $1.10
IGP06N60T Infineon Technologies AG TME Electronic Components 117 $1.05 $0.67
IKB06N60TATMA1 Infineon Technologies AG Schukat electronic 1,000 €1.60 €0.67
IKD06N60RFATMA1 Infineon Technologies AG Farnell element14 2,485 £0.90 £0.61
IKD06N60RFATMA1 Infineon Technologies AG Newark element14 2,485 $1.39 $0.63
IKD06N60RFATMA1 Infineon Technologies AG Schukat electronic - €1.37 €0.45
IKD06N60RFATMA1 Infineon Technologies AG element14 Asia-Pacific 2,485 $1.81 $0.74
IRFIB6N60APBF Vishay Dale Allied Electronics & Automation - $3.02 $2.94
IRFP26N60LPBF Vishay Siliconix New Advantage Corporation 375 $14.00 $12.73
IXFH26N60P IXYS Corporation TME Electronic Components 13 $8.17 $5.08
IXFH36N60P IXYS Corporation New Advantage Corporation 180 $8.34 $7.79
IXGH36N60B3 IXYS Corporation PUI 460 - -
IXGH36N60B3C1 IXYS Corporation TME Electronic Components 1 $87.20 $56.00
IXGH36N60B3C1 IXYS Corporation Schukat electronic 29 €41.35 €34.05
IXGH36N60B3C1 IXYS Corporation Bristol Electronics 740 - -
IXGH36N60B3D1 IXYS Corporation Schukat electronic 21 €7.38 €3.25
KGF6N60-SP-400 Intersil Corporation Bristol Electronics 127 $1.88 $0.70
MDD6N60GRH MagnaChip Semiconductor Ltd ComS.I.T. 2,400 - -
MTB6N60E Motorola Semiconductor Products Bristol Electronics 63 - -
NDF06N60ZG ON Semiconductor Allied Electronics & Automation - $1.01 $0.86
NDF06N60ZH ON Semiconductor Wuhan P&S 4 $0.77 $0.49
SGP6N60UFDTU Rochester Electronics - - -
SGP6N60UFDTU Fairchild Semiconductor Corporation Rochester Electronics 869 $0.76 $0.62
SIHH26N60E-T1-GE3 Vishay Intertechnologies Future Electronics - $2.65 $2.65
SIHH26N60E-T1-GE3 Vishay Intertechnologies Newark element14 2,785 $5.65 $3.38
SIHH26N60E-T1-GE3 Vishay Intertechnologies Farnell element14 2,795 £1.88 £1.73
SIHH26N60E-T1-GE3 Vishay Intertechnologies element14 Asia-Pacific 2,785 $6.93 $4.21
SPP06N60C3XKSA1 Infineon Technologies AG Chip1Stop 998 $1.76 $1.09
STB26N60M2 STMicroelectronics Avnet 1,000 $1.59 $1.49
STB6N60M2 STMicroelectronics ComS.I.T. 1,000 - -
STB6N60M2 STMicroelectronics New Advantage Corporation 1,000 $1.34 $1.34
STF16N60M2 STMicroelectronics Avnet 800 $1.25 $0.79
STF16N60M6 STMicroelectronics Avnet 1,000 $1.13 $0.96
STF6N60M2 STMicroelectronics TME Electronic Components 65 $1.29 $0.74
STL16N60M6 STMicroelectronics Avnet 3,000 $1.10 $1.09
STP6N60M2 STMicroelectronics New Advantage Corporation 1,900 $1.56 $1.42
STP6N60M2 STMicroelectronics element14 Asia-Pacific 450 $1.71 $0.74
STP6N60M2 STMicroelectronics Chip1Stop 582 $0.77 $0.60
STP6N60M2 STMicroelectronics Newark element14 229 $1.28 $0.58
STP6N60M2 STMicroelectronics Farnell element14 450 £0.85 £0.57
STP6N60M2 STMicroelectronics TME Electronic Components 94 $1.25 $0.73
STP6N60M2 STMicroelectronics ComS.I.T. 1,000 - -
STP6N60M2 STMicroelectronics Chip1Stop 50 $0.97 $0.66
STP6N60M2 STMicroelectronics Future Electronics 2,000 $0.78 $0.61
STW36N60M6 STMicroelectronics Avnet 600 $2.79 $2.39
STW56N60DM2 STMicroelectronics New Advantage Corporation 390 $22.28 $20.25
STW56N60DM2 STMicroelectronics ComS.I.T. 350 - -
STW56N60DM2 STMicroelectronics element14 Asia-Pacific 564 $14.45 $8.96
STW56N60DM2 STMicroelectronics Newark element14 564 $9.52 $6.20
STW56N60DM2 STMicroelectronics Farnell element14 566 £6.23 £5.22
STW56N60DM2 STMicroelectronics Future Electronics 150 $11.14 $8.28
STW56N60M2 STMicroelectronics Future Electronics - $7.63 $5.67
STW56N60M2 STMicroelectronics Chip1Stop 6 $4.72 $4.72
T6N600BW ABB Low Voltage Products and Systems Allied Electronics & Automation 2 $2638.12 $2506.22
T6N600TW ABB Low Voltage Products and Systems Allied Electronics & Automation - $2355.69 $2237.91
TK16N60WS1VF Toshiba America Electronic Components ComS.I.T. 240 - -

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6n60 datasheet (7)

Part Manufacturer Description Type PDF
6N60 Unisonic Technologies 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
6N-60 Inmet ATTENUATOR Scan PDF
6N-60 TXC 7 x 5 mm SMD Seam Cxo Tyoe / 6N Series Scan PDF
6N60-ATA3-T Unisonic Technologies 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
6N-60F Inmet ATTENUATOR Scan PDF
6N60L-ATA3-T Unisonic Technologies 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
6N60L-BTA3-T Unisonic Technologies 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF

6n60 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 6n60

Abstract: 6n60 data 6n60 equivalent imsys TO220 Semiconductor Packaging 6N60 datasheet 7103 transistor 6n60 6N-60
Text: ,000cap) FKS Label 3.0 ± 0.1 Note: All dimensions are in mm 7.7 ±0.2 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 33.0 ±0.2 0.6 +0.2 0.0 3.4 7.7 ±0.2 512.6 ± 1.0 ©2001 Fairchild


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PDF O-220-3L O-220 237mm 167mm 200cap) 525mm 360mm 265mm 6n60 6n60 data 6n60 equivalent imsys TO220 Semiconductor Packaging 6N60 datasheet 7103 transistor 6n60 6N-60
2009 - 6n60a

Abstract: 6n60b 6n60 MOSFET 6n60 power mosfet 6n60 6n60 data 6N60-B 6N60L TO-220F 6n60 equivalent MOSFET+6n60
Text: SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Normal 6N60-x-TA3-T 6N60-x-TF1-T 6N60-x-TF3-T Ordering Number Lead Free Plating 6N60L-x-TA3-T 6N60L-x-TF1-T 6N60L-x-TF3-T Halogen Free 6N60G-x-TA3-T 6N60G-x-TF1-T 6N60G-x-TF3-T Package TO-220 TO-220F1 TO-220F Pin Assignment 1 2 3 G D S , RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL 6N60-A 6N60-B Drain-Source , Drain-Source Breakdown Voltage SYMBOL 6N60-A 6N60-B Drain-Source Leakage Current Gate- Source Leakage


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PDF 6N60L 6N60G QW-R502-117 6n60a 6n60b 6n60 MOSFET 6n60 power mosfet 6n60 6n60 data 6N60-B 6N60L TO-220F 6n60 equivalent MOSFET+6n60
2010 - 6n60a

Abstract: 6n60b 6n60l 6n60 6N60G 6n60 data 6N60-B 6N60L TO-220F 6N60L TO-251
Text: .Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60L-x-TA3-T 6N60G-x-TA3-T 6N60L-x-TF1-T 6N60G-x-TF1-T 6N60L-x-TF3-T 6N60G-x-TF3-T 6N60L-x-TM3-T 6N60G-x-TM3-T 6N60L-x-TN3-R 6N60G-x-TN3-R www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO , ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL 6N60-A 6N60-B , Drain-Source Breakdown Voltage SYMBOL 6N60-A 6N60-B Drain-Source Leakage Current Gate- Source Leakage


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PDF O-220 O-251 O-220F O-220F1 QW-R502-117 6n60a 6n60b 6n60l 6n60 6N60G 6n60 data 6N60-B 6N60L TO-220F 6N60L TO-251
SSP6N60

Abstract: 6N60 MOSFET 6n60
Text: SSP6N55/ 6N60 FEATURES · Lower Ros · · · · · · (ON) N-CHANNEL POWER MOSFETS Improved , 322 SSP6N55/ 6N60 ELECTRICAL CHARACTERISTICS Symbol BVpss Characteristic Drain-Source Breakdown , . junction temperature sRS A M SU N G Electronics 323 SSP6N55/ 6N60 N-CHANNEL POWER MOSFETS , 324 SSP6N55/ 6N60 N-CHANNEL POWER MOSFETS t1 SQUARE W AVE PULSE DURATION (SECONDS) Maximum , / 6N60 N-CHANNEL POWER MOSFETS V os, DR AIN -TO -SO UR CE V O L T A G E (VO LTS) Typical


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PDF SSP6N55/6N60 SSP6N55 SSP6N60 SSP6N60 SSP6N55/60 6N60 MOSFET 6n60
2015 - 6n60c

Abstract: mosfet 6n60c 6n60
Text: ® SYMBOL  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 6N60L-TF3-T 6N60G-TF3-T TO-220F 6N60L-TF1-T 6N60G-TF1-T TO-220F1 6N60L-TMS-T 6N60G-TMS-T TO-251S 6N60L-TMS2-T 6N60G-TMS2-T TO-251S2 6N60L-TMS4-T 6N60G-TMS4-T TO-251S4 Note: Pin Assignment: G: Gate D: Drain S , UNISONIC TECHNOLOGIES CO., LTD 6N60-C Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics


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PDF 6N60-C 6N60-C 6N60L-TF3-T 6N60G-TF3-T O-220F QW-R502-A50 6n60c mosfet 6n60c 6n60
2014 - Not Available

Abstract: No abstract text available
Text: ® SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60L-TA3-T 6N60G-TA3-T 6N60L-TF3-T 6N60G-TF3-T 6N60L-TF1-T 6N60G-TF1-T 6N60L-TF2-T 6N60G-TF2-T 6N60L-TF3T-T 6N60G-TF3T-T 6N60L-TM3-T 6N60G-TM3-T 6N60L-TMS-T 6N60G-TMS-T 6N60L-TN3-T 6N60G-TN3-T 6N60L-TN3-R 6N60G-TN3-R 6N60L-TQ2-T 6N60G-TQ2-T 6N60L-TQ2-R 6N60G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET ï


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PDF QW-R502-117.
2007 - 6n60a

Abstract: 6n60b 6N60-B 6n60 6N60-A MOSFET 6n60 DSA0025594 6n60 MOSFEt 6n60 data power mosfet 6n60
Text: 6N60-x-TA3-T 6N60L-x-TA3-T www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd , 6N60-A 6N60-B Drain-Source Voltage Gate-Source Voltage VDSS RATINGS 600 650 VGSS , CHARACTERISTICS SYMBOL Drain-Source Breakdown Voltage 6N60-A 6N60-B Forward Reverse Breakdown , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as


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PDF 6N60L QW-R502-117 6n60a 6n60b 6N60-B 6n60 6N60-A MOSFET 6n60 DSA0025594 6n60 MOSFEt 6n60 data power mosfet 6n60
2008 - 6N-60

Abstract: No abstract text available
Text: 6N60-x-TA3-T 6N60L-x-TA3-T 6N60-x-TF3-T 6N60L-x-TF3-T www.unisonic.com.tw Copyright © 2008 , „ƒ, unless otherwise specified) PARAMETER SYMBOL 6N60-A 6N60-B Drain-Source Voltage VDSS , ) PARAMETER OFF CHARACTERISTICS SYMBOL Drain-Source Breakdown Voltage 6N60-A 6N60-B Forward , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as


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PDF 6N60L QW-R502-117 6N-60
2013 - Not Available

Abstract: No abstract text available
Text: Free 6N60L-TA3-T 6N60G-TA3-T 6N60L-TF1-T 6N60G-TF1-T 6N60L-TF2-T 6N60G-TF2-T 6N60L-TF3-T 6N60G-TF3-T 6N60L-TM3-T 6N60G-TM3-T 6N60L-TN3-R 6N60G-TN3-R 6N60L-TN3-T 6N60G-TN3-T 6N60L-TQ2-R 6N60G-TQ2-R 6N60L-TQ2-T 6N60G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source 6N60L-TA3-T (1)Packing , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is


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PDF O-220F O-220 O-220F1 O-220F2 QW-R502-117
2014 - Not Available

Abstract: No abstract text available
Text: 6N60G-P-TA3-T 6N60L-P-TF1-T 6N60G-P-TF1-T 6N60L-P-TF2-T 6N60G-P-TF2-T 6N60L-P-TF3-T 6N60G-P-TF3-T 6N60L-P-TM3-T 6N60G-P-TM3-T 6N60L-P-TN3-T 6N60G-P-TN3-T 6N60L-P-TN3-R 6N60G-P-TN3-R 6N60L-P-TQ2-T 6N60G-P-TQ2-T 6N60L-P-TQ2-R 6N60G-P-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source , UNISONIC TECHNOLOGIES CO., LTD 6N60-P Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 6N60-P is a high voltage power MOSFET and is


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PDF 6N60-P O-220F O-220 6N60-P O-220F1 O-220F2 O-263 O-251 O-252 QW-R502-969
6N60

Abstract: ssp6n SSP6N60
Text: SSP6N55/ 6N60 SSH6N55/ 6N60 FEATURES · · · · · · · Lower R d s (ON) Improved inductive ruggedness , 5 n , Starting TI = 2 5 `, C 448 ELECTRONICS SSP6N55/ 6N60 SSH6N55/ 6N60 ELECTRICAL , ), device add " A " su ffix to part num ber 449 ELECTRONICS SSP6N55/ 6N60 SSH6N55/ 6N60 N-CHANNEL , aturation C haracteristics M axim um S afe O p era tin g Area 450 ELECTRONICS SSP6N55/ 6N60 SSH6N55/ 6N60 N-CHANNEL POWER MOSFETS t1. S Q U A R E W A V E P U LS E D UR ATIO N (S E C O N D S


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PDF SSP6N55/6N60 SSH6N55/6N60 SSP6N55 SSH6N55 6N60 ssp6n SSP6N60
2015 - Not Available

Abstract: No abstract text available
Text: ® SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60L-TA3-T 6N60G-TA3-T 6N60L-TF3-T 6N60G-TF3-T 6N60L-TF1-T 6N60G-TF1-T 6N60L-TF2-T 6N60G-TF2-T 6N60L-TF3T-T 6N60G-TF3T-T 6N60L-TMS-T 6N60G-TMS-T 6N60L-TQ2-T 6N60G-TQ2-T 6N60L-TQ2-R 6N60G-TQ2-R Note: Pin Assignment: G , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics


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PDF QW-R502-117.
2013 - Not Available

Abstract: No abstract text available
Text: ® SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60L-TA3-T 6N60G-TA3-T 6N60L-TF1-T 6N60G-TF1-T 6N60L-TF2-T 6N60G-TF2-T 6N60L-TF3-T 6N60G-TF3-T 6N60L-TF3T-T 6N60G-TF3T-T 6N60L-TM3-T 6N60G-TM3-T 6N60L-TN3-T 6N60G-TN3-T 6N60L-TN3-R 6N60G-TN3-R 6N60L-TQ2-T 6N60G-TQ2-T 6N60L-TQ2-R 6N60G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET ï


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PDF QW-R502-117
2011 - 6n60 data

Abstract: UTC6N60 6N60L TO-220F
Text: Package Lead Free Halogen Free 6N60L-TA3-T 6N60G-TA3-T TO-220 6N60L-TF1-T 6N60G-TF1-T TO-220F1 6N60L-TF3-T 6N60G-TF3-T TO-220F 6N60L-TM3-T 6N60G-TM3-T TO-251 6N60L-TN3-R 6N60G-TN3-R TO-252 Note: Pin Assignment , UNISONIC TECHNOLOGIES CO., LTD 6N60 6.2A, 600V N-CHANNEL POWER MOSFET 1 TO-251 1 TO-220 Power MOSFET DESCRIPTION 1 TO-220F 1 TO-220F1 The UTC 6N60 is a high voltage MOSFET and is designed , 1 of 6 QW-R502-117.E 6N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless


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PDF O-251 O-220 O-220F O-220F1 O-252 QW-R502-117 6n60 data UTC6N60 6N60L TO-220F
6N60

Abstract: SSM6N55
Text: _ 7 ~ -3 7 ^ / 2 SSM6N55/ 6N60 FEATURES Low Ros(on) at high voltage Improved inductive , S 3 2 D ( SSM6N55/ 6N60 ELECTRICAL CHARACTERISTICS Characteristic Symbol Type N-CHANNEL " , N D U C T O R INC - dF | 7^4142 0005321 1 SSM6N55/ 6N60 Vas-6.S V Vgs 10V 80p3 Plise , 7^4142 05322 3 | ~ SSM6N55/ 6N60 N-CHANNEL POWER MOSFETS - T " 3 ^ - 1 3 , M I C O N D U C T O R INC de 1 7 T b 414a GOGsaaa s r SSM6N55/ 6N60 N-CHANNEL POWER


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PDF SSM6N55/6N60 SSM6N55 SSM6N60 6N60
2015 - 8N65

Abstract: No abstract text available
Text: 1N60-A 1N60A-A 2N60-A 2N60L-A 3N60-A 4N60-A 5N60-A 6N60-A 7N60-A 8N60-A 10N60-A 12N60-A 新品名 New Part Number 1N60 1N60A 2N60 2N60L 3N60 4N60 5N60 6N60 7N60 8N60 10N60 12N60 , -B 1N60A-B 2N60-B 2N60L-B 3N60-B 4N60-B 5N60-B 6N60-B 7N60-B 8N60-B 10N60-B 12N60-B 新品å


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PDF IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65
2011 - Not Available

Abstract: No abstract text available
Text: .Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60L-TA3-T 6N60G-TA3-T 6N60L-TF1-T 6N60G-TF1-T 6N60L-TF2-T 6N60G-TF2-T 6N60L-TF3-T 6N60G-TF3-T 6N60L-TM3-T 6N60G-TM3-T 6N60L-TN3-R 6N60G-TN3-R 6N60L-TN3-T 6N60G-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to


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PDF O-220F O-220 O-220F1 O-220F2 O-252 O-251 QW-R502-117
SSS6N60

Abstract: ADE 443 TI MOSFET 6n60 6n60 K300 SSS6N55
Text: SSS6N55/ 6N60 N-CHANNEL POWER MOSFETS FEATURES TO-270* • Low* Ros (O*» A 1 ffM Mff 1 M r4 a m 1 • • M m • m A A A A A A • improroo inductive ruggedness • Fas! switching times ^— • Rugged polysilicon gate cell structure • Lower Input capacitance • Extended safe , EUCTTONICS 443 SSS6N55/ 6N60 N-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS SSS6N55/ 6N60 N-CHANNEL


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PDF SSS6N55/6N60 O-270* SSS6N5S6N60 SSS6N55 SSS6N60 SSSSN55 SSSSM60 Tc-25-C Tc-25 ADE 443 TI MOSFET 6n60 6n60 K300
6n60a

Abstract: 6N60 3N90 IXTM6N60 IXTP6N60
Text: (on) Static Drain-Source On-State 6N60A - - 1.2 q VGS=10V, lo=3.0A Resistance (2) 6N60 - - 1.5 q , BV0SS Drain-Source Breakdown Voltage 6N60 , 60A 600 - - V VQS=0V, lD =250fiA vgsmm Gate Threshold , Drain-to-Source 6N60R , 60AR 500 mJ See Fig. 5, page 22 for test circuit. Avalanche Energy 3N90R,90AR


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PDF IXTP6N60, IXTM6N60 IXTP6N60 O-220 6n60a 6N60 3N90 IXTP6N60
6n60a

Abstract: IXTM6N60 6n60 600 volt n channel power mosfet
Text: =125°C RoS(on) Statìc Drain-Source On-State 6N60A - - 1.2 Q VGS=10V, lD =3.0A Resistance (2) 6N60 - - 1.5 Q , . Max. Units Test Conditions BV0SS Drain-Source Breakdown Voltage 6N60 , 60A 600 - - V VGS=0V, lD , 6N60R , 60AR 500 mJ See Fig. 5, page 22 for test circuit. Avalanche Energy 3N90R,90AR THERMAL


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PDF IXTP6N60 IXTM6N60 IXTP6N60, Drain-Sour420 O-204 O-220 O-247 6n60a 6n60 600 volt n channel power mosfet
Not Available

Abstract: No abstract text available
Text: specified) PARAMETER SYMBOL 6N60-A 6N60-B Drain-Source Voltage Gate-Source Voltage VDSS


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PDF L6N60 L6N60 L6N60L O-220
2005 - transistor 6n60

Abstract: 6N60 H06N60F 06N60 H06N60E H06N60U H06N60 marking code 749 PB40 MOS200402
Text: 0 6N60 Date Code H K M I 3 G N 2 O P J L Note: Green label is , is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source 3 F F 0 6N60 Material


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PDF MOS200402 H06N60 O-263 spee80 183oC 217oC 260oC H06N60U, H06N60E, transistor 6n60 6N60 H06N60F 06N60 H06N60E H06N60U marking code 749 PB40 MOS200402
6n55

Abstract: power mosfet 6n60 TH6N55 6n55 data
Text: MOTOROLA TECHNICAL DATA SEM ICONDUCTOR M T H 6N 55 M T H 6 N 60 M TM 6N60 TM O S POWER FETs 6 AMPERES rDS(on) = 1-2 OH M S 550 and 600 VOLTS Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Pow er FETs are desig n ed fo r h ig h vo ltag e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g regulators , ) IDSS - - 0.2 1 V (B R )D S S 550 600 V dc M TH 6N55 M TH 6N60 CASE 3 40-02 T O -2 18 A C S ym b o l M


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transistor 6n60

Abstract: RX6N60 power mosfet 6n60
Text: CPEC CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX6N60 600V N MOSFET 216 D 6 14 Tel086-28-85198496 85198428 Fax086-28-8519893 [RX6N60] Rev.1.0 [2011.6.01] -1- www.chinacpec.com CPEC General Description CHENGDU PROMISING CHIP ELECTRONICS CO., LTD 6N60 600V N-Channel MOSFET RX6N60, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve Switching performance and enhance the avalanche energy


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PDF RX6N60 Tel086-28-85198496 Fax086-28-8519893 RX6N60] RX6N60, O-220AB, 00A/us, transistor 6n60 RX6N60 power mosfet 6n60
6N60

Abstract: 6n60 equivalent 6n60 data
Text: E 6N60 VDSS=600V ID=6.0A RDS(ON)=1.2 MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description DraintoSource Breakdown Voltage Static DraintoSource OnResistance Gate Threshold Voltage DraintoSource Leakage Current GatetoSource Leakage Current Operating Junction and Storage Temperature Range Min. 600V Typ. Max. 1.2 4V 1A ±100nA 55°C to 175


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PDF 100nA 6N60 6n60 equivalent 6n60 data
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