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LTC1090CSW Linear Technology LTC1090 - Single Chip 10-Bit Data Acquisition System; Package: SO; Pins: 20; Temperature Range: 0°C to 70°C
LTC1293DCSW Linear Technology LTC1293 - Single Chip 12-Bit Data Acquisition System; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1289CCSW#TRPBF Linear Technology LTC1289 - 3 Volt Single Chip 12-Bit Data Acquisition System; Package: SO; Pins: 20; Temperature Range: 0°C to 70°C
LTC1293BCSW#TRPBF Linear Technology LTC1293 - Single Chip 12-Bit Data Acquisition System; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1296BISW#PBF Linear Technology LTC1296 - Single Chip 12-Bit Data Acquisition System; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LTC1296DCSW#TRPBF Linear Technology LTC1296 - Single Chip 12-Bit Data Acquisition System; Package: SO; Pins: 20; Temperature Range: 0°C to 70°C

6n60 data Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 6n60

Abstract: 6n60 data 6n60 equivalent imsys TO220 Semiconductor Packaging 6N60 datasheet 7103 transistor 6n60 6N-60
Text: TO-220-3L Tube Packing Data TO-220 Tube Packing Configuration: Figure 1.0 Packaging Description , ,000cap) FKS Label 3.0 ± 0.1 Note: All dimensions are in mm 7.7 ±0.2 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 33.0 ±0.2 0.6 +0.2 0.0 3.4 7.7 ±0.2 512.6 ± 1.0 ©2001 Fairchild


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PDF O-220-3L O-220 237mm 167mm 200cap) 525mm 360mm 265mm 6n60 6n60 data 6n60 equivalent imsys TO220 Semiconductor Packaging 6N60 datasheet 7103 transistor 6n60 6N-60
2009 - 6n60a

Abstract: 6n60b 6n60 MOSFET 6n60 power mosfet 6n60 6n60 data 6N60-B 6N60L TO-220F 6n60 equivalent MOSFET+6n60
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as , SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Normal 6N60 -x-TA3-T 6N60 -x-TF1-T 6N60 , , L: Lead Free, Blank: Pb/Sn 1 of 6 QW-R502-117.C 6N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL 6N60 -A 6N60 -B Drain-Source


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PDF 6N60L 6N60G QW-R502-117 6n60a 6n60b 6n60 MOSFET 6n60 power mosfet 6n60 6n60 data 6N60-B 6N60L TO-220F 6n60 equivalent MOSFET+6n60
2010 - 6n60a

Abstract: 6n60b 6n60l 6n60 6N60G 6n60 data 6N60-B 6N60L TO-220F 6N60L TO-251
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 1 TO-220 TO-251 DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to , D S Packing Tube Tube Tube Tube Tape Reel 1 of 6 QW-R502-117.D 6N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL 6N60 -A 6N60 , , VDD BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL TO-220 TO-220F/TO-220F1 TO


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PDF O-220 O-251 O-220F O-220F1 QW-R502-117 6n60a 6n60b 6n60l 6n60 6N60G 6n60 data 6N60-B 6N60L TO-220F 6N60L TO-251
2015 - 6n60c

Abstract: mosfet 6n60c 6n60
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 -C Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 -C is a high voltage power MOSFET and is designed to have better characteristics , QW-R502-A50.C 6N60 -C  Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-A50.C 6N60 -C  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless , ‰¤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER TO


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PDF 6N60-C 6N60-C 6N60L-TF3-T 6N60G-TF3-T O-220F QW-R502-A50 6n60c mosfet 6n60c 6n60
2014 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics , Tube Tube Tube Tube Tube Tube Tube Tape Reel Tube Tape Reel 1 of 6 QW-R502-117. K 6N60 , 25°C 4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA , 110 1.0 3.2 θJC 2.97 °C/W 2.27 2 of 6 QW-R502-117. K 6N60  Power MOSFET


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PDF QW-R502-117.
2007 - 6n60a

Abstract: 6n60b 6N60-B 6n60 6N60-A MOSFET 6n60 DSA0025594 6n60 MOSFEt 6n60 data power mosfet 6n60
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as , 6N60 -x-TA3-T 6N60L-x-TA3-T www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 7 QW-R502-117.A 6N60 , 6N60 -A 6N60 -B Drain-Source Voltage Gate-Source Voltage VDSS RATINGS 600 650 VGSS


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PDF 6N60L QW-R502-117 6n60a 6n60b 6N60-B 6n60 6N60-A MOSFET 6n60 DSA0025594 6n60 MOSFEt 6n60 data power mosfet 6n60
2008 - 6N-60

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as , 6N60 -x-TA3-T 6N60L-x-TA3-T 6N60 -x-TF3-T 6N60L-x-TF3-T www.unisonic.com.tw Copyright © 2008 , Packing Tube Tube 1 of 6 QW-R502-117.B 6N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL 6N60 -A 6N60 -B Drain-Source Voltage VDSS


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PDF 6N60L QW-R502-117 6N-60
2014 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 -P Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 6N60 -P is a high voltage power MOSFET and is , Reel Tube Tape Reel 1 of 7 QW-R502-969.B 6N60 -P  Power MOSFET MARKING INFORMATION , www.unisonic.com.tw MARKING 2 of 7 QW-R502-969.B 6N60 -P  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC , = 25°C  THERMAL DATA PARAMETER TO-220/TO-220F2 TO-220F/TO-220F1 Junction to Ambient


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PDF 6N60-P O-220F O-220 6N60-P O-220F1 O-220F2 O-263 O-251 O-252 QW-R502-969
2013 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is , © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-117.I 6N60  Power MOSFET ABSOLUTE , ‰¤200A/μs, V DD ≤ BV DSS , Starting T J = 25°C  THERMAL DATA PARAMETER TO-220/TO-220F2 TO , QW-R502-117.I 6N60  Power MOSFET ELECTRICAL CHARACTERISTICS (T J =25°C, unless otherwise


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PDF O-220F O-220 O-220F1 O-220F2 QW-R502-117
2015 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics , Tube Tube Tube Tube Tape Reel 1 of 7 QW-R502-117. L 6N60  Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-117. L 6N60  Power MOSFET , , VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO


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PDF QW-R502-117.
2013 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics , Tube Tape Reel Tube Tape Reel 1 of 6 QW-R502-117.J 6N60  Power MOSFET ABSOLUTE , ‰¤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER TO-220/TO-220F TO , -117.J 6N60  Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified


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PDF QW-R502-117
2011 - 6n60 data

Abstract: UTC6N60 6N60L TO-220F
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 6.2A, 600V N-CHANNEL POWER MOSFET 1 TO-251 1 TO-220 Power MOSFET DESCRIPTION 1 TO-220F 1 TO-220F1 The UTC 6N60 is a high voltage MOSFET and is designed , 1 of 6 QW-R502-117.E 6N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless , 25°C THERMAL DATA PARAMETER SYMBOL TO-220 TO-220F/TO-220F1 TO-251/TO-252 TO-220 TO-220F/TO , QW-R502-117.E 6N60 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) SYMBOL BVDSS


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PDF O-251 O-220 O-220F O-220F1 O-252 QW-R502-117 6n60 data UTC6N60 6N60L TO-220F
2011 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to , -117.G 6N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER , ‰¤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/ TO-220F2 Junction to , 1.0 3.2 2.97 2.27 UNIT °C/W °C/W 2 of 6 QW-R502-117.G 6N60 Power MOSFET


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PDF O-220F O-220 O-220F1 O-220F2 O-252 O-251 QW-R502-117
2015 - 8N65

Abstract: No abstract text available
Text: 1N60-A 1N60A-A 2N60-A 2N60L-A 3N60-A 4N60-A 5N60-A 6N60 -A 7N60-A 8N60-A 10N60-A 12N60-A 新品名 New Part Number 1N60 1N60A 2N60 2N60L 3N60 4N60 5N60 6N60 7N60 8N60 10N60 12N60 , -B 1N60A-B 2N60-B 2N60L-B 3N60-B 4N60-B 5N60-B 6N60 -B 7N60-B 8N60-B 10N60-B 12N60-B 新品å


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PDF IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65
6n60a

Abstract: IXTM6N60 6n60 600 volt n channel power mosfet
Text: . Max. Units Test Conditions BV0SS Drain-Source Breakdown Voltage 6N60 , 60A 600 - - V VGS=0V, lD , =125°C RoS(on) Statìc Drain-Source On-State 6N60A - - 1.2 Q VGS=10V, lD =3.0A Resistance (2) 6N60 - - 1.5 Q


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PDF IXTP6N60 IXTM6N60 IXTP6N60, Drain-Sour420 O-204 O-220 O-247 6n60a 6n60 600 volt n channel power mosfet
2005 - transistor 6n60

Abstract: 6N60 H06N60F 06N60 H06N60E H06N60U H06N60 marking code 749 PB40 MOS200402
Text: 0 6N60 Date Code H K M I 3 G N 2 O P J L Note: Green label is , is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source 3 F F 0 6N60 Material


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PDF MOS200402 H06N60 O-263 spee80 183oC 217oC 260oC H06N60U, H06N60E, transistor 6n60 6N60 H06N60F 06N60 H06N60E H06N60U marking code 749 PB40 MOS200402
6n55

Abstract: power mosfet 6n60 TH6N55 6n55 data
Text: MOTOROLA TECHNICAL DATA SEM ICONDUCTOR M T H 6N 55 M T H 6 N 60 M TM 6N60 TM O S POWER FETs 6 AMPERES rDS(on) = 1-2 OH M S 550 and 600 VOLTS Designer's Data Sheet P o w e r Field E ffe ct T ra n , itch in g Tim es Specified at 100°C · D esigner's Data - Iq s s , V D S(on)' VG S*th > and S 0 A s , ) IDSS - - 0.2 1 V (B R )D S S 550 600 V dc M TH 6N55 M TH 6N60 CASE 3 40-02 T O -2 18 A C S ym b o l M in M ax m Adc Designer's Data for "W o rst Case" Conditions - The Designer's Data Sheet


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6N60

Abstract: 6n60 equivalent 6n60 data
Text: E 6N60 VDSS=600V ID=6.0A RDS(ON)=1.2 MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description DraintoSource Breakdown Voltage Static DraintoSource OnResistance Gate Threshold Voltage DraintoSource Leakage Current GatetoSource Leakage Current Operating Junction and , VDS = 600V, VGS = 0V, TJ = 25°C VGS = ±20V Mechanical Data Nominal Back Metal Composition


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PDF 100nA 6N60 6n60 equivalent 6n60 data
P6N60

Abstract: p6n55 tp6n55 6N55 MTP6N55 TP6N60 SITH 6n55 data N and P MOSFET power mosfet 6n60
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe ct T , Speeds - S w itch in g Tim es S pecified at 100°C · D esigner's Data - IDSS' ^D S (o n )' ^G S (th ) ar , and Storage Tem perature Range vgs Symbol 6N55 V DSS V DGR 550 550 20 40 6N60 600 600 Unit Vdc , Designer's D ata fo r "W o rs t C ase" Condition# - T he D e sig n e r's Data S heet p e rm its th e de , fa c ilita te "w orst ca s e " design MOTOROLA TMOS POWER MOSFET DATA MTP6N55,60 ELECTRICAL


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PDF MTP6N55 P6N60 p6n55 tp6n55 6N55 TP6N60 SITH 6n55 data N and P MOSFET power mosfet 6n60
2013 - triac mw 131 600d

Abstract: 65n06
Text: maintain and improve the quality and reliability of NELL products. Regarding the contents of products data , NELL or any third parties resulting from its use of the products data ,drawings,figures and other , 110 5 600 2.5 TO-220F N- 6N60 N-channel 125 6 600 2 (NMOS003) N


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PDF
2003 - transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Text: . Environmental data : CFC 0%, HCFC 0%, Cl. Solve. 0%, ODP 0.0, VOC 100%. Applications - Used on contacts


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PDF
IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 smps cook circuit MTM5N90 designers datasheet irf8408 2N6823 TP8N10 What is comparable with IRF 3205 siemens semiconductor manual
Text: elector G uide Theory and A p p lic a tio n s C hapters 1 th ro u g h 15 Data Sheets Index and C , POWER MOSFET DATA MOTOROLA POWER MOSFET TRANSISTOR DATA Prepared by Technical Information Center , information on the product, application ideas of power MOSFETs and data sheets of the broadest line of power , ‘‘All Rights Reserved” M OTOROLA TM OS POW ER M OSFET DATA S elector G uide TMOS Power , preferred devices and are recommended for new designs. MOTOROLA TMOS POWER MOSFET DATA 1-3 3-493


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PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 smps cook circuit MTM5N90 designers datasheet irf8408 2N6823 TP8N10 What is comparable with IRF 3205 siemens semiconductor manual
equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 7028 SMD Transistor HCF4018be 6120* harris Harris Application Note 9415
Text: (407) 724-7800 • Latest Literature Revisions • New Product Listing • Data Book Request Form , verify that data sheets are current before placing orders, information furnished by Harris is beiieved , HSP43214 (Note 1) Serial I/O Filter HSP9501 Programmable Data Buffer HSP43881 Digital Filter , Multiplexer/Demultiplexer CD4512B CMOS 8-Channel Data Selector CD4519B CMOS 4-Bit AND/OR Selector, Quad 2Channel Data Selector, or Quad Exclusive NOR Gate CD4556B CMOS Dual Binary-to-1-to-4 Decoder


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PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 7028 SMD Transistor HCF4018be 6120* harris Harris Application Note 9415
EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 TRIAC BCR 10km FEB3T 2N8491 smd transistor marking 352a FTG 1087 S sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: financial data . All requests for open credit are subject to Newark's prior approval and require 21 days , in­ clude connectors, relays, switches and semicon­ ductors. Current price data is available from , DATA •O VER 70,000 SUBSTITUTE DEVICE LISTINGS OF NEW OR DISCONTINUED PARTS •10,000 SURFACE , covered in data sections such as Military, Digital, Microprocessors, Microprocessor Development Systems, Microcomputer Boards, In­ terface, Linear, Memory and Custom/SemiCustom. Key IC producers have included data


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AD0912UB-A7

Abstract: AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
Text: CHARACTERISTICS & DEFINITION 4 - 1 All rated characteristics were specified as per data sheet enclosed. 4 · 2 , Pressure : The air flow data and static pressures should be determined in accordance with AMCA standard or , measured data on insulation resistance and dielectric strength shall meet the specificait 7.5 Do not place


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PDF AD0912UB-A73GL 49/22i AD0912UB-A7 AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
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