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Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158IN Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1336CN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver

6R199P mosfet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - 6R199P

Abstract: 6R199P mosfet 6R199P+mosfet
Text: Package IPW60R199CP PG-TO247-3 Ordering Code Marking SP000089802 6R199P Maximum , , repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ


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PDF IPW60R199CP PG-TO247-3 SP000089802 6R199P 6R199P 6R199P mosfet 6R199P+mosfet
2006 - 6R199P

Abstract: 6R199P mosfet 6R199 6R199P DATA SHEET mosfet 6R199 IPW60R199CP SP000089802 IPW60R199 JESD22
Text: IPW60R199CP PG-TO247-3-1 Ordering Code Marking SP000089802 6R199P Maximum ratings, at T j , AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ P tot


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PDF IPW60R199CP PG-TO247-3-1 SP000089802 6R199P 6R199P 6R199P mosfet 6R199 6R199P DATA SHEET mosfet 6R199 IPW60R199CP SP000089802 IPW60R199 JESD22
2010 - 6R199P mosfet

Abstract: IPL60R199CP mosfet 6R199 6R199 IPL60R199 6r199p TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOSTM CP Power Transistor IPL60R199CP Data Sheet Rev. 2.1, 2011-12-20 Final Industrial & Multimarket 600V , which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely , Parameters Value 650 0.199 32 51 6.1 200 Package PG-VSON-4 Unit V nC A µJ A/µs Marking 6R199P Related Links , current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating temperature


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PDF IPL60R199CP 150mm² 6R199P mosfet IPL60R199CP mosfet 6R199 6R199 IPL60R199 6r199p TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r
2007 - 6R199P

Abstract: 6R199 6R199P mosfet IPA60R199CP JESD22 CoolMOS Power Transistor
Text: PG-TO220 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol , 0.66 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt Gate


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PDF IPA60R199CP PG-TO220 6R199P 6R199P 6R199 6R199P mosfet IPA60R199CP JESD22 CoolMOS Power Transistor
2007 - 6R199P mosfet

Abstract: 6R199P 6R199P TO220
Text: Marking 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain , Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate


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PDF IPP60R199CP PG-TO220 SP000084278 6R199P 6R199P mosfet 6R199P 6R199P TO220
2007 - 6R199

Abstract: 6R199P 6R199P mosfet 6R199P+mosfet
Text: IPA60R199CP PG-TO220 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter , , V DD=50 V 0.66 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness


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PDF IPA60R199CP PG-TO220 6R199P 6R199 6R199P 6R199P mosfet 6R199P+mosfet
2007 - 6R199P

Abstract: 6R199 6R199P mosfet 6R199P DATA SHEET IPA60R199CP JESD22
Text: PG-TO220 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol , 0.66 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt Gate


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PDF IPA60R199CP PG-TO220 6R199P 6R199P 6R199 6R199P mosfet 6R199P DATA SHEET IPA60R199CP JESD22
1999 - 6R199P mosfet

Abstract: No abstract text available
Text: Package PG-TO262 Ordering Code SP000103248 Marking 6R199P Maximum ratings, at T j=25 °C, unless , , repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS


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PDF IPI60R199CP PG-TO262 SP000103248 6R199P 6R199P mosfet
2006 - 6R199P

Abstract: IPA60R199CP 6R199P mosfet
Text: topologies Type IPA60R199CP Package PG-TO220FP Ordering Code SP000094146 Marking 6R199P , , repetitive t AR3),4) Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage I D


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PDF IPA60R199CP PG-TO220FP SP000094146 6R199P 6R199P IPA60R199CP 6R199P mosfet
2007 - 6R199P

Abstract: 6R199 6R199P mosfet 02TYP mosfet 6R199
Text: SMPS topologies Type IPA60R199CP Package PG-TO220 Marking 6R199P Maximum ratings, at T j , ) Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I


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PDF IPA60R199CP PG-TO220 6R199P 6R199P 6R199 6R199P mosfet 02TYP mosfet 6R199
2007 - 6R199P

Abstract: to-263-3 smd transistor marking DF
Text: Marking 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain , Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate


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PDF IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P to-263-3 smd transistor marking DF
2006 - 6R199P

Abstract: 6R199 6R199P DATA SHEET IPB60R199 mosfet 6R199 smd marking code cp IPB60R199CP JESD22 SP000223256 SMD MARKING CODE 102
Text: Code Marking IPB60R199CP PG-TO263 SP000223256 6R199P Maximum ratings, at T j=25 °C , AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ P tot


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PDF IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P 6R199 6R199P DATA SHEET IPB60R199 mosfet 6R199 smd marking code cp IPB60R199CP JESD22 SP000223256 SMD MARKING CODE 102
2007 - IPP60R199CP

Abstract: No abstract text available
Text: Package IPP60R199CP PG-TO220 Ordering Code Marking SP000084278 6R199P Maximum ratings , , repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ


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PDF IPP60R199CP PG-TO220 SP000084278 6R199P IPP60R199CP
2006 - 6R199P

Abstract: IPP60R199CP 6R199 6R199P mosfet 6R199P TO220 IPP60R199 6R199P DATA SHEET mosfet 6R199 6R19 SP000084278
Text: IPP60R199CP PG-TO220 Ordering Code Marking SP000084278 6R199P Maximum ratings, at T j=25 °C , AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ P tot


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PDF IPP60R199CP PG-TO220 SP000084278 6R199P 6R199P IPP60R199CP 6R199 6R199P mosfet 6R199P TO220 IPP60R199 6R199P DATA SHEET mosfet 6R199 6R19 SP000084278
2007 - 6r199p

Abstract: mosfet 6R199 6R199P DATA SHEET IPP60R199CP JESD22 SP000084278 6R199
Text: IPP60R199CP PG-TO220 Ordering Code Marking SP000084278 6R199P Maximum ratings, at T j=25 °C , AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ P tot


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PDF IPP60R199CP PG-TO220 SP000084278 6R199P 6r199p mosfet 6R199 6R199P DATA SHEET IPP60R199CP JESD22 SP000084278 6R199
1999 - 6R199P

Abstract: 6R199 DF 331 TRANSISTOR PG-TO220-3-31 IPA60R199CP 6R19 JESD22 SP000094146 IPA60R199C
Text: Marking PG-TO220-3-31 SP000094146 6R199P Maximum ratings, at T j=25 °C, unless otherwise , ) E AR I D=6.6 A, V DD=50 V 0.66 Avalanche current, repetitive t AR3),4) I AR MOSFET dv


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PDF IPA60R199CP PG-TO220-3-31 SP000094146 6R199P 6R199P 6R199 DF 331 TRANSISTOR PG-TO220-3-31 IPA60R199CP 6R19 JESD22 SP000094146 IPA60R199C
2006 - 6R199P

Abstract: 6R199P DATA SHEET mosfet 6R199 6R199 IPW60R199CP JESD22 SP000089802
Text: IPW60R199CP PG-TO247-3-1 Ordering Code Marking SP000089802 6R199P Maximum ratings, at T j , AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ P tot


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PDF IPW60R199CP PG-TO247-3-1 SP000089802 6R199P 6R199P 6R199P DATA SHEET mosfet 6R199 6R199 IPW60R199CP JESD22 SP000089802
2006 - marking code ff p SMD Transistor

Abstract: 6R199P
Text: Package PG-TO263 Ordering Code SP000223256 Marking 6R199P Maximum ratings, at T j=25 °C, unless , , repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS


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PDF IPB60R199CP PG-TO263 SP000223256 6R199P marking code ff p SMD Transistor 6R199P
1999 - ISS 99 diode

Abstract: 6R199P IPW60R199 6R19 IPW60R199CP
Text: PG-TO247-3-1 Ordering Code SP000089802 Marking 6R199P Maximum ratings, at T j=25 °C, unless otherwise , ) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0.480 V static


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PDF IPW60R199CP PG-TO247-3-1 IPW60R199CP PG-TO247-3-1 SP000089802 6R199P ISS 99 diode 6R199P IPW60R199 6R19
2012 - 6R199

Abstract: Diode SMD SJ 99
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS™ CP Power Transistor IPL60R199CP Data Sheet Rev. 2.2, 2012-01-09 Final Industrial & Multimarket 600V , devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use , Package Marking IPL60R199CP PG-VSON-4 6R199P 1) J-STD20 and JESD22 Final Data Sheet 2 , Avalanche current, repetitive IAR - - 6.6 A MOSFET dv/dt ruggedness dv/dt - -


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PDF IPL60R199CP 150mm 6R199 Diode SMD SJ 99
2007 - Not Available

Abstract: No abstract text available
Text: Package IPI60R199CP PG-TO262 Ordering Code Marking SP000103248 6R199P Maximum ratings , , repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ


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PDF IPI60R199CP PG-TO262 SP000103248 6R199P
2007 - 6R199P

Abstract: 6R199P mosfet IPW60R199CP PG-TO-247-3 6R199 JESD22 SP000089802 6R19
Text: IPW60R199CP PG-TO247-3 Ordering Code Marking SP000089802 6R199P Maximum ratings, at T j , AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ P tot


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PDF IPW60R199CP PG-TO247-3 SP000089802 6R199P 6R199P 6R199P mosfet IPW60R199CP PG-TO-247-3 6R199 JESD22 SP000089802 6R19
2007 - 6r199p

Abstract: IPI60R199CP JESD22 SP000103248 ISS 99 diode 6R199
Text: IPI60R199CP PG-TO262 Ordering Code Marking SP000103248 6R199P Maximum ratings, at T j=25 °C , AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS A mJ P tot


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PDF IPI60R199CP PG-TO262 SP000103248 6R199P 6r199p IPI60R199CP JESD22 SP000103248 ISS 99 diode 6R199
1999 - DF 331 TRANSISTOR

Abstract: No abstract text available
Text: Package PG-TO220-3-31 Ordering Code SP000094146 Marking 6R199P Maximum ratings, at T j=25 °C , ) Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I


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PDF IPA60R199CP PG-TO220-3-31 SP000094146 6R199P DF 331 TRANSISTOR
2010 - Not Available

Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOSTM CP Power Transistor IPL60R199CP Data Sheet Rev. 1.1, 2010-06-28 Preliminary Industrial & Multimarket 600V , which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely , JEDEC1) for target applications (Server, Adapter) Pb-free plating, Halogen free eli 6R199P 2 gate , current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating temperature


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PDF IPL60R199CP 150mm²
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