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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

6G zener diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 6G zener diode

Abstract: HZU8.2G HZU10G HZU12G diode hitachi DSA003643
Text: HZU-G Series S Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-617A (Z) Rev.1 Nov. 2001 Features · Zener diode for surge absorb suitable for IEC 1000-4-2 and 5 to 10V products , Main Characteristic 10-2 HZU5.1G 10-3 HZU5. 6G Zener Current IZ (A) 10-4 HZU7.5G HZU8 , Electrical Characteristics (Ta = 25°C) Zener voltage VZ (V) * Reverse current Dynamic resistance , 5 5 1.5 130 5 30 HZU5. 6G 5.31 5.92 5 5 2.5 80 5 30 HZU6


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PDF ADE-208-617A D-85622 D-85619 6G zener diode HZU8.2G HZU10G HZU12G diode hitachi DSA003643
1998 - ADE-208-617

Abstract: Hitachi DSA002743
Text: HZU-G Series S Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-617(Z) Rev 0 Jun. 1998 Features · Zener diode for surge absorb suitable for IEC 1000-4-2 and 5 to 10V products are , -6 HZU5.1G HZU5. 6G HZU6.2G HZU6.8G HZU7.5G HZU8.2G HZU9.1G HZU10G Iz Zener Current 10 10 10 10 , ­55 to +150 Unit mW °C °C Electrical Characteristics (Ta = 25°C) Zener voltage Reverse current Test Condition IR(µA) Dynamic resistance ESD-Capability *2 VZ (V) *1 Type HZU5.1G HZU5. 6G HZU6


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PDF ADE-208-617 D-85622 Hitachi DSA002743
2005 - 6G zener diode

Abstract: HZU8.2G HZU10G HZU12G PTSP0002ZA-A ADE-208-617
Text: HZU-G Series Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1205-0200 (Previous: ADE-208-617A) Rev.2.00 Sep 14, 2005 Features · Zener diode for surge absorb suitable for IEC , Series Main Characteristic 10-2 HZU5.1G 10-3 HZU5. 6G Zener Current IZ (A) 10-4 HZU7 , . Electrical Characteristics (Ta = 25°C) Zener Voltage 1 VZ (V) * Type No. Test Condition Reverse , 130 IZ (mA) 5 Min 30 HZU5. 6G HZU6.2G 5.31 5.86 5.92 6.53 5 5 5 2 2.5


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PDF REJ03G1205-0200 ADE-208-617A) PTSP0002ZA-A 6G zener diode HZU8.2G HZU10G HZU12G PTSP0002ZA-A ADE-208-617
2006 - HZU10G

Abstract: HZU12G PTSP0002ZA-A zener mark code A2
Text: HZU-G Series Silicon Planar Zener Diode for Surge Absorption REJ03G1215-0300 Rev.3.00 Jun 08, 2006 Features · Zener diode for surge absorption suitable for IEC 1000-4-2. · Ultra small Resin , HZU5.1G 10-3 HZU5. 6G Zener Current IZ (A) 10-4 HZU7.5G HZU8.2G HZU6.2G 10-5 , Electrical Characteristics (Ta = 25°C) Zener Voltage Reverse Current Type No. VZ (V) *1 Min Max HZU5.1G HZU5. 6G 4.84 5.31 5.37 5.92 Test Condition IZ (mA) 5 5 HZU6.2G HZU6


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PDF REJ03G1215-0300 PTSP0002ZA-A HZU10G HZU12G PTSP0002ZA-A zener mark code A2
2001 - HZU10G

Abstract: HZU12G
Text: products contained therein. HZU-G Series S Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-617A (Z) Rev.1 Nov. 2001 Features · Zener diode for surge absorb suitable for IEC 1000-4-2 , .1G 10-3 HZU5. 6G Zener Current IZ (A) 10-4 HZU7.5G HZU8.2G HZU6.2G 10-5 HZU9 , °C Note: 1. See Fig2 Electrical Characteristics (Ta = 25°C) Zener voltage VZ (V , I Z (mA) Min HZU5.1G 4.84 5.37 5 5 1.5 130 5 30 HZU5. 6G 5.31


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PDF D-85622 D-85619 HZU10G HZU12G
2006 - HZU10G

Abstract: HZU12G PTSP0002ZA-A
Text: . HZU-G Series Silicon Planar Zener Diode for Surge Absorption REJ03G1215-0300 Rev.3.00 Jun 08, 2006 Features · Zener diode for surge absorption suitable for IEC 1000-4-2. · Ultra small Resin Package (URP , HZU5.1G 10-3 HZU5. 6G Zener Current IZ (A) 10-4 HZU7.5G HZU8.2G HZU6.2G 10-5 , Electrical Characteristics (Ta = 25°C) Zener Voltage Reverse Current Type No. VZ (V) *1 Min Max HZU5.1G HZU5. 6G 4.84 5.31 5.37 5.92 Test Condition IZ (mA) 5 5 HZU6.2G HZU6


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2006 - Not Available

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. HZU-G Series Silicon Planar Zener Diode for Surge Absorption REJ03G1215-0300 Rev.3.00 Jun 08, 2006 Features • Zener diode for surge , (Ta = 25°C) Zener Voltage Type No. VZ (V) *1 Min Max Test Condition IZ (mA) Reverse , 30 30 30 30 30 30 30 HZU5.1G 4.84 5.37 5 HZU5. 6G 5.31 5.92 5 HZU6.2G 5.86 6.53 5 , ; According to IR spec Mark Code Type No. HZU5.1G HZU5. 6G HZU6.2G HZU6.8G HZU7.5G HZU8.2G HZU9


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2014 - Not Available

Abstract: No abstract text available
Text: TENTATIVE DATA SHEET BZD27C.W Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 , DATA SHEET BZD27C.W Series 1 W Surface Mount Zener Diode Ratings and Characteristics (Ta 25 ºC , DATA SHEET BZD27C.W Series 1 W Surface Mount Zener Diode Ratings and Characteristics (Ta 25 ºC , Mount Zener Diode Revision History Date Revision Description of Changes 03-May-2013 0 , current • High surge current and zener capability • Low differential resistance • Tolerance


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PDF BZD27C. AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, OD123W. MIL-STD-750 J-STD-002 bzd27cw Feb-14
2013 - Not Available

Abstract: No abstract text available
Text: TENTATIVE DATA SHEET BZD27C.W Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 , -13 Page Number: 1/6 TENTATIVE DATA SHEET BZD27C.W Series 1 W Surface Mount Zener Diode Ordering , W Surface Mount Zener Diode Ratings and Characteristics (Ta 25 ºC unless otherwise noted , -13 Page Number: 3/6 TENTATIVE DATA SHEET BZD27C.W Series 1 W Surface Mount Zener Diode Ratings , Series 1 W Surface Mount Zener Diode Ratings and Characteristics (Ta 25 ºC unless otherwise noted


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PDF BZD27C. AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, OD123W. MIL-STD-750 J-STD-002 bzd27cw May-13
marking WM4

Abstract: TPES10B-24005-0-1 UL26 marking FA dual zener diode 20a marking 2P 2PIN ZENER 13,8V TPES10 IEC320 WM-6
Text: . Noise & Ripple: Typical 1.0 % peak to peak. OVP: Built-in, Zener diode clamp. Overload Protection: Typ , (Schuko-stecker)/ WM5(UK)/WM6, 6G (Australia) Desktop Format: IEC320 Inlet Type DT7-3P or DT8-2P. Mouse Power , available for WM2,5, 6G /DT7/PT2,4,5,7 Medical Use: TPES10M-12004-G-7 UL2601/EN60601. Power Density , (Fold-out ), [1] WM1, [2]WM2, [3]WM3, [4] WM4, [5] WM5, [6] WM6, [ 6G ] WM6G [7] DT7 (IEC320 3-pin or 3L


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PDF TPES10 TPES10B EN55022/FCC TPES10 90-264Vac 90-132Vac IEC320 90-132Vac marking WM4 TPES10B-24005-0-1 UL26 marking FA dual zener diode 20a marking 2P 2PIN ZENER 13,8V WM-6
1997 - TLE5208

Abstract: 5208-6G a9282 A928 P-DSO-28-6 TLE5208-6G window winder
Text: a Zener diode of e.g. 36 V is connected from V S to GND then this rule no longer applies. Cs can be , . The TLE5208- 6G contains 6 high-side (HS) drivers and 6 low-side (LS) drivers, which can be configured , cost-effective and technically elegant solution. 6 * High-Side TLE5208- 6G = Hex Half Bridge Driver Power Double Six = TLE5208- 6G 6 * Low-Side Features: · · · · · · · · · · · · · , of the IC. Figure 1: Block schematic diagram of the TLE5208- 6G There are 6 halfbridge


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PDF 5208-6G 5208-6G TLE5208-6G 16-bit 67007-A9282 de/Semiconductor/products/36/36 TLE5208 a9282 A928 P-DSO-28-6 window winder
zener diode marking E7

Abstract: 5V6 DIODE FMMV2107 Zener Diode LF marking zener diode E7 6G zener diode FMMD6100 FMMV2104 DIODE ZENER DUAL 16 FMMD2837
Text: 24.3 27.0 29.7 2.8 300 FMMV2109 30 29.7 33.0 36.3 2.8 200 ZENER DIODES Type Range (V) Voltage , max. at lF = mA Volts mA ns 10 50 100 BAS21 Single diode 200 200 50 -/-/1.0 BAS20 Single diode 150 200 50 -/-/1.0 BAS 19 Single diode 100 200 50 -/-/1.0 BAS 16 Single diode 75 100 6 0.855/1.0/- FMMD914 Single diode 75 75 4/8 1.0/-/- HD3A Single diode 75 100 6 1.0/-/- BAL99 Single diode 70 100 6 0.855/1.1/1.3 BAR99 Single diode 70 100 6 0.855/1.1/1.3 BAL74 Single diode 50 150 4 -/-/1.0 BAR74


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PDF OT-23 C2/C20 50MHz FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FMMV2107 zener diode marking E7 5V6 DIODE Zener Diode LF marking zener diode E7 6G zener diode FMMD6100 DIODE ZENER DUAL 16 FMMD2837
2006 - micro MELF dimensions st

Abstract: DL4728 DL4761 ZMY75G
Text: ZMY5.1G 4.8 5.4 ZMY5. 6G 5.2 6 ZMY6.2G 5.8 ZMY6.8G 6.4 ZMY7.5G Zener , Chatsworth !"# $ % !"# Features Silicon 1.0 Watt Silicon Power Zener Diodes 3.0thru 75 Volts Voltage Range For Surface Mount Application Zener Diodes Mechanical Data GLASS MELF , 3.2 100 5 (<8) Vz (10-4/) ­8.+1 ZMY3.3G 3.1 3.5 100 5 (<8) ZMY3. 6G


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PDF Jun-1st-2010 MMTZJ39 DLZ39D ZMY75G DL4728 DL4761 micro MELF dimensions st DL4761 ZMY75G
2006 - ua244

Abstract: No abstract text available
Text: Street Chatsworth !"# $ % !"# Features Silicon 1.0 Watt Silicon Power Zener Diodes 3.0thru 75 Volts Voltage Range For Surface Mount Application Zener Diodes Mechanical Data GLASS , ) ZMY3. 6G 3.4 3.8 100 ZMY3.9G 3.7 4.1 100 ZMY4.3G 4 4.6 100 ZMY4.7G 4.4 5 ZMY5.1G 4.8 5.4 ZMY5. 6G 5.2 6 ZMY6.2G 5.8 ZMY6.8G 6.4 ZMY7.5G Zener Voltage@Izt Type Test Current Temp. Coefficient Reverse Volt @Ir=1uA Vr(V


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PDF ZMY75G ua244
Not Available

Abstract: No abstract text available
Text: .1G 4.8 5.4 ZMY5. 6G 5.2 6 ZMY6.2G 5.8 ZMY6.8G 6.4 ZMY7.5G Zener Voltage@Izt , Silicon 1.0 Watt Silicon Power Zener Diodes 3.0thru 75 Volts Voltage Range For Surface Mount Application Zener Diodes Mechanical Data GLASS MELF Glass Case: MELF Mounting Position:Any , (<8) αVz (10-4/ć) –8…+1 ZMY3.3G 3.1 3.5 100 5 (<8) ZMY3. 6G 3.4 3.8


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PDF ZMY75G
2012 - STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA STK and STR integrated circuits, 2011 edition transistor 5d smd ELM85361A SMD TRANSISTOR MARKING 6B smd sot-323 marking code pa
Text: Absorption Zener diode Si-diode Silicon diode Si-Varistor Silicon voltage depending resistor Si-npn , circuit Vref-IC Voltage Reference integrated circuit Z-diode Zener diode Column 4 (“Short , : BM-IC Battery Management integrated circuit BR Bridge Rectifier C-diode Capacitance diode (varactor , /DC-IC DC/DC voltage converter integrated circuit ESDP-diode ElectroStatic Discharge Protection diode , integrated gate protection diode -FETd FET, depletion type -FETe FET, enhancement type MMIC -MOSFET


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PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA STK and STR integrated circuits, 2011 edition transistor 5d smd ELM85361A SMD TRANSISTOR MARKING 6B smd sot-323 marking code pa
2000 - 714 diode varicap

Abstract: hitachi diode Hitachi Zener diodes Hitachi diodes 1SS106 using a zener diode as a varicap HRC0203A 05AZ 04BZ small signal diode hitachi
Text: -4 Voltagecompensation zener diode General URP MPAK DO-35/MHD High power DO-41 1-4 Main type No. 1S2076A HSM124S , 1.0 Long side (mm) 1-10 HITACHI DIODE Appendix Lineup of Hitachi's Zener Diodes Wide , DIODE Hitachi Diode Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI DIODE 1. Hitachi , office for any questions regarding this document or Hitachi semiconductor products. HITACHI DIODE


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PDF ADE-A08-005E 714 diode varicap hitachi diode Hitachi Zener diodes Hitachi diodes 1SS106 using a zener diode as a varicap HRC0203A 05AZ 04BZ small signal diode hitachi
DHR11C

Abstract: DHR11C H CATHODE DHR11A DHR11A-A DHR11C-A DUR11A DUR11A-A
Text: 1A-6G DxxllC-6F DxxllC- 6G ❖ Features 0.43 INCH DIGIT HEIGHT. LOW CURRENT OPERATION. EXCELLENT , made with Gallium Phosphide Red Light Emitting Diode . The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode . The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode . The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode . The


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PDF 43INCH) DHR11C DHR11C H CATHODE DHR11A DHR11A-A DHR11C-A DUR11A DUR11A-A
M 14606

Abstract: BZV55C6V1 MLL5221B mlu714 BZV55C4V3
Text: mW LEADLESS DO-34 APPLICATION NOTE '* S h e * the actual voltage available from a given zener diode , 4.2.4 DATA SHEETS ZËNER VOLTAGE REGULATOR DIODES - continued Section 4 .2 A 2 Surface Mounted - , wprac*rvh TRANSIENT VOLTAGE SUPPRESSORS AND ZENER DIODES 4-Z -67 MOTOROLA SC ( DIO JES /OP TO , Leadless DO-34 Glass Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP GENERAL DATA 500 mW LEADLESS DO-34 LEADLESS GLASS ZENER DIODES 600 MILLIWATTS 1.8-66 VOLTS 500 mW


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PDF DO-34 DCWUCT10M UUC291S M 14606 BZV55C6V1 MLL5221B mlu714 BZV55C4V3
SV0100

Abstract: No abstract text available
Text: Input threshold voltage 2 O utput leakage current 1 O utput leakage current 2 Zener current 1 Zener , , pin5 & 6=G ND R l =° o, pin5 & 6=G ND R L=oo, pin5=H, pln6=L R L=oo, pin5=L, pln6=H R l = 60Q, pln5=H , ), w here V ZD: a zener voltage applied to pin #4 If pin #4 is left open, the output voltage Is given , (Continued) ZENER CURRENT VS. OUTPUT CURRENT Vcc=12V RL = 100 Vw = 7.4V 6 p in : L 4 6 8 10 12 14 R E


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PDF KA8301 10-SIPH-B KA8301 10-SIPH-B SV0100
TMS6009

Abstract: TTL counter SN5442 MOS ANALOG SWITCHES
Text: interconnected. The gate of each MOS device is protected by a diode circuit and must be switched by an external , 13 _ 12 _ 11 _ 10 1G 5G 6G G — Gate S — Source NC — No Internat connection mechanical data , direction for zener clamp).0.1 mA Continuous dissipation at (or below) 25°C free-air


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PDF 16-pin SN5442/SN7442 TMS6009 TTL counter SN5442 MOS ANALOG SWITCHES
IPP037N06L3 G

Abstract: No abstract text available
Text: ¸€ ฀7@C฀>@C6฀56E2:=65฀:?7@C>2E:@? , 6G ฀  A286฀     IPB034N06L3 G , \[QbPaN[PR g S` hV 9Ih5*hI 9hR 9I"\[#ZNe฀ I 9 ฀ -# * ฀ 6G :46฀@?฀ ฀>>฀Ià , <฀4@AA6C฀2C62฀7@C฀5C2:?฀ 4@?64E:@? ฀*฀:D฀G6CE:42=฀:?฀DE:=฀2:C , 6G ฀  A286฀    , ¸€/฀V =I ฀/ K Reverse Diode :@56฀4@?E:?@FD฀7@CH2C5฀4FCC6?E II , ¸€C64@G6CJ฀492C86 Q _ T 8฀U .# , 6G ฀  V =I ฀/฀I < ฀฀ T W฀U V H à


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PDF IPB034N06L3 IPI037N06L3 IPP037N06L3 492C86à E6DE65 E2C86Eà IPP037N06L3 G
DIODE 5c2 5t

Abstract: No abstract text available
Text: ¸€ ฀ , 6G ฀  JWZNe  U฀2?5฀5FEJ฀4J4=6฀ ฀7@C฀/8D / A286฀   , * ฀ 6G :46฀@?฀ ฀>>฀I฀ ฀>>฀I฀ ฀>>฀6A@IJ฀*฀!,฀H:E9฀฀4> à , , 6G ฀  A286฀   IPB144N12N3 G IPI147N12N3 G Parameter IPP147N12N3 G , *-1 V ; ฀/฀V >I ฀/ K Reverse Diode :@56฀4@?E:?@FD฀7@CH2C5฀4FCC6?E II , ¸€C64@G6CJ฀492C86 Q _ T 9฀U -# , 6G ฀  V >I ฀/฀I =฀฀ T W฀U V H à


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PDF IPB144N12N3 IPI147N12N3 IPP147N12N3 492C86à E2C86Eà DIODE 5c2 5t
1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode , . 9 Zener Diodes for Temperature Compensation . 10 Zener Diodes , .1G HZU5. 6G HZU5.6Z HZU6.2G HZU6.2Z HZU6.8G HZU6.8Z HZU7.5G HZU8.2G HZU9.1G HZU10G Package UFP , .8Z* HZU5.1G HZU5. 6G HZU6.2G HZU6.8G HZU7.5G HZU8.2G HZU9.1G HZU10G HZM3.3WA HZM6.2ZMWA* HZM6 , only *: Low capacitance 9 Zener Diodes for Temperature Compensation Application Temperature


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PDF HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: for a rectifier diode is usually the maximum PIV (peak inverse voltage) of the diode , but for a zener diode the operating ( zener voltage) will be given. Normally, where a voltage, current or power is , Tuner band switch diode 56-2.7 pF varicap npn Rf 8GHz MRF941 dual ca 10V 0.3W zener 10V 0.3W zener 10V , zener Si diode 200V 100mA 11V 0.3W zener 11V 1W zener npn/pnp 22k+22k bias res npn + res npn + res Si diode 200V 100mA dual ca 12V 0.3W zener dual series RF schottky15V 20mA 12V 0.3W zener 12V 1W zener


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PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
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