The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

6515 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - MT 5388 BGA

Abstract: Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux ericsson bts 6000 mobile switching center msc 2x4 TTL demultiplexer cisco 2801 ericsson bts Technical specification alcatel 1511
Text: Voltage Transistor Transistor Logic 14 Flow-Control Management Sequential Access Part Number , Transceiver Logic JTAG - Joint Test Action Group LVTTL - Low Voltage Transistor Transistor Logic 15


Original
PDF 12-03/DS/DL/BAY/10K CORP-PSG-00123 MT 5388 BGA Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux ericsson bts 6000 mobile switching center msc 2x4 TTL demultiplexer cisco 2801 ericsson bts Technical specification alcatel 1511
long deLAY ic timer relay

Abstract: LIGHT ACTIVATED SWITCH CIRCUIT DIAGRAM 104MS DIP relay motor circuit NF230 614H
Text: Stabilized voltage 8 Vs Supply voltage 1.2 Oscillator T- 65-15 The circuit U 6037 B (DIP 8) and U 6037 , 1.3 Relay output The relay output is an open collector Darlington transistor with integrated 23 V , greaterthan approx. 40Vln the case of load dump. The output transistor is dimensioned so that it can absorb , U 6037 B U 6037 B-FP 44E D asEDcnb ooio7b7 □ malgg TELEFUNKEN T- 65-15 ELECTRONIC door is , resistance "6H Pin 4 -/a R R* Pin 3 R Ft* Min. 0.001 1.6 1.6 Typ. Max. T- 65-15 10 0.5 1.1


OCR Scan
PDF 60resistance T-65-15 long deLAY ic timer relay LIGHT ACTIVATED SWITCH CIRCUIT DIAGRAM 104MS DIP relay motor circuit NF230 614H
Not Available

Abstract: No abstract text available
Text: BFP620 Infineon technologies NPN Silicon-Germanium RF Transistor Preliminary Data • • For high gain low noise amplifier Noise Figure F = 0.65 dB at 1.8 GHz • G ms=21 dB at 1.8 GHz Gold metalization for high reliability 70G Hz fT - Line 10dBm Input IP3 capability @ 1.95 GHz, VC =2V , mW Junction temperature 7] tbd °C Ambient temperature range Ta - 65.+15 0 °C °C Storage temperature range 7"stg - 65.+15 0 °C °C Total power dissipation, Ts


OCR Scan
PDF BFP620 10dBm T-343
2009 - TRANSISTOR tl131

Abstract: No abstract text available
Text: LDMOS Transistor 0.76 mm [.030"] thick, εr = 4.5 TMM4 2 oz. copper Description Suggested , .0KECT-ND S1 Transistor Infineon Technologies BCP56 S2 Voltage regulator National , », 65.15 Ω W = 0.889, L = 2.540 W = 35, L = 100 TL103 0.027 λ, 65.15 Ω W1 = 0.889, W2 = 0.889, W3 = 2.032 W1 = 35, W2 = 35, W3 = 80 TL104 0.047 λ, 65.15 Ω W = 0.889, L = 3.556 , = 120, W3 = 100 TL113 0.025 λ, 65.15 Ω W = 0.889, L = 1.905 W = 35, L = 75 TL114


Original
PDF PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131
2009 - TRANSISTOR tl131

Abstract: 100B100JW500X tl241 tl239 TRANSISTOR c104 c102 TRANSISTOR TMM4 C105 c103 TRANSISTOR 200B103MW50X
Text: Transistor 0.76 mm [.030"] thick, r = 4.5 TMM4 2 oz. copper Description Suggested Manufacturer , .0KECT-ND S1 Transistor Infineon Technologies BCP56 S2 Voltage regulator National , W1 = 2.032, W2 = 2.032, W3 = 3.048 W1 = 80, W2 = 80, W3 = 120 TL102 0.033 , 65.15 W = 0.889, L = 2.540 W = 35, L = 100 TL103 0.027 , 65.15 W1 = 0.889, W2 = 0.889, W3 = 2.032 W1 = 35, W2 = 35, W3 = 80 TL104 0.047 , 65.15 W = 0.889, L = 3.556 W = 35, L = 140


Original
PDF PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-37248-2 TRANSISTOR tl131 100B100JW500X tl241 tl239 TRANSISTOR c104 c102 TRANSISTOR TMM4 C105 c103 TRANSISTOR 200B103MW50X
1997 - 28 pins calculator lcd display pin configuration

Abstract: watch lcd calculator display HT1611A 6621 STOPWATCH 8 DIGIT HT93XXX
Text: 58.22 65.15 65.15 65.15 65.15 65.15 65.15 65.15 65.15 2 Y ­66.72 ­66.72 ­66.72 ­66.72 , 59 60 X 65.15 65.15 65.15 65.15 65.15 65.15 45.13 36.97 28.82 20.66 12.49 4.34 ­3.83


Original
PDF HT1611A 10-digit 12-hour 24-hour 32768Hz 28 pins calculator lcd display pin configuration watch lcd calculator display HT1611A 6621 STOPWATCH 8 DIGIT HT93XXX
Hall sensor 44e

Abstract: hall IC 44E hall 44E 44e sensor U2229B hall switch ignition hall generator S637T speedometer driver ignition coil
Text: Duty cycle (of the control voltage) Input frequency Output current of the driver transistor during the current rise In the ignition coil Vs " Vb. , , - 14.0 V Saturation voltage of the driver transistor /0 = 2 , ELECTRONIC T- 65-15 M in. Vs = VBa, 4.6 Typ. M ax. 16.5 V mA 20 1.5 -0 .5 65 85 350 V mA % Hz , 2 9 T - T le T- 65-15 TELEFUNKEN ELECTRONIC F ig .5 Layout T 2 2 2


OCR Scan
PDF 2229B T-65-15 Hall sensor 44e hall IC 44E hall 44E 44e sensor U2229B hall switch ignition hall generator S637T speedometer driver ignition coil
2009 - C205

Abstract: No abstract text available
Text: LDMOS Transistor TMM 4 TMM 4 2 oz. copper 2 oz. copper *Gerber files for this circuit available , Resistor Resistor Resistor Resistor Transistor Voltage regulator 2000 ohm 5100 ohm 10 ohm 1000 , 120 mils W2 3.048 mm 120 mils W3 2.540 mm 100 mils MTEE$ 65.15 Ω 0.011 Π, mils 0.000 λ W 2.032 mm 80 mils L 0.025 mm TL123 MLIN 1 mils 65.15 Ω 0.030 λ W 0.889 mm 35 mils L 2.540 mm 100 mils TL124 MLIN 65.15 Ω 0.043


Original
PDF PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205
2009 - tl2272

Abstract: TL239 c104 TRANSISTOR MM380 445-1411-2-ND tl241 c103 TRANSISTOR DATA TL243 PTFB191501E PTFB191501F
Text: = 4.5 LDMOS Transistor TMM 4 TMM 4 2 oz. copper 2 oz. copper *Gerber files for this , PCC104BCT-ND Resistor Resistor Resistor Resistor Resistor Resistor Transistor Voltage regulator , mils W3 2.540 mm TL120 MTEE$ 65.15 0.011 W1 100 mils 0.889 mm 35 mils , 80 mils L 0.025 mm TL123 MLIN 65.15 1 mils 0.030 W 0.889 mm 35 mils L 2.540 mm 100 mils TL124 MLIN 65.15 0.043 W 0.889 mm 35 mils L


Original
PDF PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 tl2272 TL239 c104 TRANSISTOR MM380 445-1411-2-ND tl241 c103 TRANSISTOR DATA TL243
crystal oscillator 32768hz

Abstract: ic sk 383 CMC 2423 6621 12 pin 4 digit 7 segment display layout -CD-5461A
Text: Unit: mil Pad No. X Y Pad No. X Y Pad No. X Y 1 -65.03 66.21 21 -19.98 -66.72 41 65.15 19.89 2 -65.03 57.76 22 -13.18 -66.72 42 65.15 28.05 3 -65.03 49.26 23 -6.38 -66.72 43 65.15 36.21 4 -65.03 42.46 24 0.43 -66.72 44 65.15 44.37 5 -65.03 35.66 25 7.22 -66.72 45 65.15 52.53 6 -65.03 28.86 26 14.02 -66.47 46 65.15 60.69 7 -65.03 22.06 27 24.23 -66.39 47 45.13 66.21 8 -65.03 15.26 28 31.02 -66.39 48 36.97 , -21.42 33 65.15 -56.31 53 -3.83 66.21 14 -65.03 -29.07 34 65.15 -37.28 54 -11.98 66.21 15 -65.03 -36.72


OCR Scan
PDF HT1611A 10-digit 12-hour 24-hour 32768Hz crystal oscillator 32768hz ic sk 383 CMC 2423 6621 12 pin 4 digit 7 segment display layout -CD-5461A
8085 memory organization

Abstract: IC 8085 pin diagram 8085 microprocessor HM-6551 HM-6518 HM-6516 HM-6515L HM-6515H HM-6515 mos 6551
Text: rn SEMICONDUCTOR PRODUCTS DIVISION A DIVISION OF HARRIS CORPORATION Advance Information HM- 6515 , MAX. 50mW/MHz MAX. 240ns MAX. 5 VOLT VCC 2 STD. TTL LOADS Description The HM- 6515 is a CMOS 1024 x , that keep the active (operating) power low, and also give fast access times. The pinout of the HM- 6515 , accomodate a variety of PROMs, RAMs, EPROMs and ROMs. The HM- 6515 is ideally suited for use in , allowing the data outputs to be controlled independent of the chip enable. The HM- 6515 is supplied in two


OCR Scan
PDF HM-6515 50mW/MHz 240ns HM-6515 HM-6515, HM-6516 HM-6518 HM-6551 HM-6561 8085 memory organization IC 8085 pin diagram 8085 microprocessor HM-6551 HM-6518 HM-6516 HM-6515L HM-6515H mos 6551
2004 - HM28S

Abstract: HMBT28S
Text: HI-SINCERITY Spec. No. : HN200213 Issued Date : 2002.08.01 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HMBT28S NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT28S is a NPN silicon transistor , designed for use in general-purpose SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier applications. SOT-23 Features · Excellent hFE Linearity · , . Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity= 65%±15 % 2


Original
PDF HN200213 HMBT28S HMBT28S OT-23 183oC 217oC 260oC HM28S HM28S
2004 - HMBT6427

Abstract: transistor tl
Text: HI-SINCERITY Spec. No. : HE6846 Issued Date : 1995.07.21 Revised Date : 2004.08.31 Page No. : 1/4 MICROELECTRONICS CORP. HMBT6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor SOT-23 Absolute Maximum Ratings · Maximum Temperatures Storage Temperature. -55 ~ +150 °C Junction Temperature , . Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity= 65%±15 % 2


Original
PDF HE6846 HMBT6427 OT-23 200oC 183oC 217oC 260oC 245oC HMBT6427 transistor tl
2005 - DARLINGTON TIN

Abstract: H2N6427 Darlington transistor to 92
Text: HI-SINCERITY Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor TO-92 Absolute Maximum Ratings · Maximum Temperatures Storage Temperature . -55 ~ +150 °C Junction Temperature , 1. Storage environment: Temperature=10oC~35oC Humidity= 65%±15 % 2. Reflow soldering of surface-mount


Original
PDF HE6274 H2N6427 183oC 217oC 260oC DARLINGTON TIN H2N6427 Darlington transistor to 92
2004 - HMBTA06

Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6840 Issued Date : 1994.07.29 Revised Date : 2004.09.16 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA06 NPN SILICON TRANSISTOR Description Amplifier Transistor SOT-23 Absolute Maximum Ratings · Maximum Temperatures Storage Temperature. -55 ~ +150 °C Junction Temperature , environment: Temperature=10oC~35oC Humidity= 65%±15 % 2. Reflow soldering of surface-mount devices Figure 1


Original
PDF HE6840 HMBTA06 OT-23 183oC 217oC 260oC HMBTA06
1997 - STA451C

Abstract: sma4031 STA405A SMA6012 STA437A SLA4031 sta475a SLA6010 STA401A STA341M
Text: TRANSISTOR ARRAYS TRANSISTOR ARRAYS VCEO IC (ICP) hFE Type No. (V) STA301A STA302A , 100 200 80 60±10 100±15 -120 60 60 35±5 -60 60 -60 60±10 -60 100 60 -60 65±15 -50 , TRANSISTOR ARRAYS TRANSISTOR ARRAYS VCEO IC (ICP) hFE (V) (A) Equivalent Circuit Diagram , TRANSISTOR ARRAYS 25 TRANSISTOR ARRAYS 26 A TM MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 TRANSISTOR ARRAYS 27


Original
PDF STA301A STA302A STA303A STA304A STA305A STA308A STA311A STA312A STA321A STA322A STA451C sma4031 STA405A SMA6012 STA437A SLA4031 sta475a SLA6010 STA401A STA341M
2005 - ht-666

Abstract: transistor h2a HT666 HE6464
Text: HI-SINCERITY Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HT666 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications. TO-92 Features · High Frequency Current Gain · High Speed Switching Transistor Absolute Maximum Ratings · , Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity= 65%±15 % 2. Reflow


Original
PDF HE6464 HT666 HT666 183oC 217oC 260oC ht-666 transistor h2a HE6464
2005 - transistor h2a

Abstract: HMPSA06
Text: HI-SINCERITY Spec. No. : HE6302 Issued Date : 1992.09.09 Revised Date : 2005.02.05 Page No. : 1/5 MICROELECTRONICS CORP. HMPSA06 NPN SILICON TRANSISTOR Description Amplifier transistor TO-92 Absolute Maximum Ratings · Maximum Temperatures Storage Temperature . -55 ~ +150 °C Junction Temperature , Humidity= 65%±15 % 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP


Original
PDF HE6302 HMPSA06 183oC 217oC 260oC transistor h2a HMPSA06
7f22

Abstract: No abstract text available
Text: .9 8 -1 3 .1 8 -6 .3 8 0.43 7.22 14.02 24.23 31.02 37.83 44.63 51.42 58.22 65.15 65.15 65.15 65.15 65.15 65.15 65.15 65.15 Y -6 6 .7 2 -6 6 .7 2 -6 6 .7 2 -6 6 .7 2 -6 6 .7 2 -6 6 .4 7 -6 6 .3 9 -6 6 .3 , 3.57 11.73 P a d N o. 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 X 65.15 65.15 65.15 65.15 65.15 65.15 45.13 36.97 28.82 20.66 12.49 4.34 -3 .8 3 -1 1 .9 8 -2 0 .1 5 -2 8 .3 1 -3 6 .4 7 -4


OCR Scan
PDF HT1611A 32768H 7f22
2004 - HMBT2369

Abstract: 100MHZ hE68
Text: HI-SINCERITY Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2004.09.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBT2369 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2369 is designed for general purpose switching and amplifier applications. SOT-23 Features · Low Collector Saturation Voltage · High speed switching Transistor Absolute Maximum Ratings · Maximum , . Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity= 65%±15 % 2


Original
PDF HE6834 HMBT2369 HMBT2369 OT-23 183oC 217oC 260oC 100MHZ hE68
2004 - HMBTA42

Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6848 Issued Date : 1994.07.29 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA42 NPN EPITACIAL PLANAR TRANSISTOR Description High Voltage Transistor SOT-23 Absolute Maximum Ratings · Maximum Temperatures Storage Temperature. -55 ~ +150 °C Junction Temperature , : Temperature=10oC~35oC Humidity= 65%±15 % 2. Reflow soldering of surface-mount devices Figure 1: Temperature


Original
PDF HE6848 HMBTA42 OT-23 183oC 217oC 260oC HMBTA42
2005 - y1 marking code transistor

Abstract: HSB1386I transistor mark code H1
Text: HI-SINCERITY Spec. No. : HI200201 Issued Date : 2002.02.01 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386I LOW FREQUENCY TRANSISTOR (-20V, -4A) Features · Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) · Excellent DC current gain characteristics. TO-251 Structure Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings (TA=25°C) Symbol , . Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity= 65%±15 % 2


Original
PDF HI200201 HSB1386I O-251 183oC 217oC 260oC y1 marking code transistor HSB1386I transistor mark code H1
2005 - transistor h2a

Abstract: H2A transistor transistor marking T2 HSB1386A HA2001
Text: HI-SINCERITY Spec. No. : HA200111 Issued Date : 2001.12.01 Revised Date : 2005.02.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386A LOW FREQUENCY TRANSISTOR (-20V, -4A) Features · Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) TO-92 · Excellent DC current gain characteristics. Structure Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings (TA , Humidity= 65%±15 % 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP


Original
PDF HA200111 HSB1386A 183oC 217oC 260oC transistor h2a H2A transistor transistor marking T2 HSB1386A HA2001
2005 - HLB121D

Abstract: TO126ML hlb121
Text: HI-SINCERITY Spec. No. : HD200205 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HLB121D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121D is a medium power transistor designed for use in switching applications. TO-126ML Features · High breakdown voltage · Low collector saturation voltage · Fast switching speed Absolute , environment: Temperature=10oC~35oC Humidity= 65%±15 % 2. Reflow soldering of surface-mount devices Figure 1


Original
PDF HD200205 HLB121D HLB121D O-126ML 183oC 217oC 260oC TO126ML hlb121
2005 - transistor h2a

Abstract: diode marking H2 H2A transistor HAD825
Text: HI-SINCERITY Spec. No. : HE6406 Issued Date : 1994.01.13 Revised Date : 2005.01.25 Page No. : 1/4 MICROELECTRONICS CORP. HAD825 NPN EPITAXIAL PLANAR TRANSISTOR Features Darlington transistor . Absolute Maximum Ratings TO-92 · Maximum Temperatures Storage Temperature. -55 ~ +150 °C Junction Temperature , 1. Storage environment: Temperature=10oC~35oC Humidity= 65%±15 % 2. Reflow soldering of surface-mount


Original
PDF HE6406 HAD825 200oC 183oC 217oC 260oC 245oC transistor h2a diode marking H2 H2A transistor HAD825
Supplyframe Tracking Pixel