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    Part ECAD Model Manufacturer Description Datasheet Download Buy Part
    DAC7725U/1K Texas Instruments QUAD, PARALLEL, WORD INPUT LOADING, 8us SETTLING TIME, 12-BIT DAC, PDSO28, SO-28 Visit Texas Instruments
    CD40105BF3AS2283 Texas Instruments CMOS 4-Bit-by-16-Word FIFO Register 16-CDIP Visit Texas Instruments
    TLV5613CDWR Texas Instruments PARALLEL, WORD INPUT LOADING, 1us SETTLING TIME, 12-BIT DAC, PDSO20, PLASTIC, SO-20 Visit Texas Instruments
    TMS626162 Texas Instruments TMS626162 524 288-WORD BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (PC66) Visit Texas Instruments
    TMS417400-60DR Texas Instruments TMS417400 4194304-Word By 4-Bit High-Speed DRAMS Visit Texas Instruments
    DAC7802LP Texas Instruments DUAL, PARALLEL, WORD INPUT LOADING, 0.4us SETTLING TIME, 12-BIT DAC, PDIP24 Visit Texas Instruments

    64K-WORD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags
    2005 - Not Available

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM 64K-Word By 16 Bit CS16LV10243 Revision History Rev. No , . High Speed Super Low Power SRAM CS16LV10243 64K-Word By 16 Bit GENERAL DESCRIPTION The , 64K-Word By 16 Bit CS16LV10243 PIN CONFIGURATIONS FUNCTIONAL BLOCK DIAGRAM 3 Rev. 1.1 , Power SRAM CS16LV10243 64K-Word By 16 Bit PIN DESCRIPTIONS Name Type A0 – A15 Input , product or specification without notice. High Speed Super Low Power SRAM CS16LV10243 64K-Word By 16


    Original     		PDF 64K-Word CS16LV10243 CS16LV10243 16bits 55/70ns
    16Mb

    Abstract: Flash SPANSION s29al016 W25X040 w25p32 mxic s29al016 s29al008 M29W160 SST25VF016
    Text: ESMT F49L800A 2.7~3.6V Byte/ Word program Chip/Sector (8K,4K,4K,16K,32K*15) words erase 100% drop in replace SST SST39LF080/80 0 SST39VF080/08 8/800 2.7~3.6V Word program , Word program Chip/Sector (8K,4K,4K,16K,32K*15) words erase 100% drop in replace MXIC MX29LV800 2.7~3.6V Byte/ Word program Chip/Sector (8K,4K,4K,16K,32K*15) words erase 100% drop in replace ST M29W800 2.7~3.6V Byte/ Word program Chip/Sector (8K,4K,4K,16K,32K*15


    Original     		PDF 512Kx1 F49L800A SST39LF080/80 SST39VF080/08 S29AL008 MX29LV800 M29W800 50MHz S25FL004A 16Mb Flash SPANSION s29al016 W25X040 w25p32 mxic s29al016 s29al008 M29W160 SST25VF016
    2005 - 3582B

    Abstract: AT49BV322DT AT49BV322D-70TU AT49BV322D 48C17
    Text: Erase Architecture · · · · · · · · · · · · · ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 10 µs Fast Sector Erase Time ­ 100 ms Suspend/Resume Feature for Erase and , Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 10 mA Active ­ 15 µA Standby Data Polling, Toggle Bit, Ready/Busy for


    Original     		PDF 3582B AT49BV322DT AT49BV322D-70TU AT49BV322D 48C17
    2004 - Not Available

    Abstract: No abstract text available
    Text: Erase Architecture · · · · · · · · · · · · · ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 12 µs Fast Sector Erase Time ­ 300 ms Suspend/Resume Feature for Erase and , Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 12 mA Active ­ 13 µA Standby Data Polling, Toggle Bit, Ready/Busy for


    Original     		PDF 3360B
    2005 - AT49BV322A

    Abstract: AT49BV322AT
    Text: Erase Architecture · · · · · · · · · · · · · · ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 12 µs Fast Sector Erase Time ­ 300 ms Suspend/Resume Feature for Erase and , Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 12 mA Active ­ 13 µA Standby Data Polling, Toggle Bit, Ready/Busy for


    Original     		PDF 3308J AT49BV322A AT49BV322AT
    2005 - 3360D

    Abstract: AT49SV322A AT49SV322AT
    Text: Erase Architecture · · · · · · · · · · · · · · ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 12 µs Fast Sector Erase Time ­ 300 ms Suspend/Resume Feature for Erase and , Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 12 mA Active ­ 13 µA Standby Data Polling, Toggle Bit, Ready/Busy for


    Original     		PDF 3360D AT49SV322A AT49SV322AT
    2003 - Not Available

    Abstract: No abstract text available
    Text: Architecture · · · ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 12 µs Fast Sector Erase Time , Sector by Suspending Erase of a Different Sector ­ Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 12 mA Active ­ 13 µA , Enable Reset READY/BUSY Output Write Protection Data Inputs/Outputs I/O15 (Data Input/Output, Word Mode


    Original     		PDF 3308F
    LRS1329

    Abstract: SHARP LED 6.0 4.6
    Text: Word /Byte Block ODeep power down current OOptimized F-V, 100 ns pin) . . . - 25 mA (Max. t , Blocking (Max.) * * * * 10 for F-V, pin) Architecture Two 4X- word /8K-byte Boot Blocks/ Six 4K- word /8K-byte Thirty-one 32X- word /64K-byte Main Blocks/ Top 0 Extended Cycling PA (Max , Erase Cycles 0 Enhanced Automated Suspend Options Word /Byte write Suspend to Read Block , , t,=lp s) 2V, 2V) SHARP LRS1329 2. Pin Configuration r INDEX Block erase and Word


    Original     		PDF LRS1329 LRS1329) MFM2-J11601 LRS1329 SHARP LED 6.0 4.6
    2005 - Not Available

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM CS16LV10243 64K-Word By 16 Bit Revision History Rev. No , CS16LV10243 64K-Word By 16 Bit GENERAL DESCRIPTION The CS16LV10243 is a high performance; high speed , CS16LV10243 64K-Word By 16 Bit PIN CONFIGURATIONS A4 A3 A2 A1 A0 /CE DQ0 DQ1 DQ2 DQ3 VCC VSS , CS16LV10243 64K-Word By 16 Bit PIN DESCRIPTIONS Name Type A0 – A15 Input Function , specification without notice. High Speed Super Low Power SRAM CS16LV10243 64K-Word By 16 Bit ABSOLUTE


    Original     		PDF CS16LV10243 64K-Word CS16LV10243 16bits 55/70ns
    2005 - 3582B

    Abstract: AT49BV322D AT49BV322DT AT49BV
    Text: Erase Architecture · · · · · · · · · · · · · ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 10 µs Fast Sector Erase Time ­ 100 ms Suspend/Resume Feature for Erase and , Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 10 mA Active ­ 15 µA Standby Data Polling, Toggle Bit, Ready/Busy for


    Original     		PDF 3582B AT49BV322D AT49BV322DT AT49BV
    2005 - 3582B

    Abstract: No abstract text available
    Text: Architecture ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 10 µs Fast Sector Erase Time ­ 100 , Suspending Erase of a Different Sector ­ Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 10 mA Active ­ 15 µA Standby Data Polling , / Word Program) is exited by powering down the device, or by pulsing the RESET pin low for a minimum of


    Original     		PDF 3582B
    2003 - AT49BV32XA

    Abstract: AT49BV320A AT49BV320AT AT49BV322A AT49BV322AT 2E0000
    Text: Erase Architecture · · · · · · · · · · · · · ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 12 µs Fast Sector Erase Time ­ 300 ms Suspend/Resume Feature for Erase and , Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 12 mA Active ­ 13 µA Standby Data Polling, Toggle Bit, Ready/Busy for


    Original     		PDF 3308D AT49BV32XA AT49BV320A AT49BV320AT AT49BV322A AT49BV322AT 2E0000
    2006 - cs16lv10243

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM 64K-Word By 16 Bit CS16LV10243 Revision History Rev. No , or specification without notice. High Speed Super Low Power SRAM CS16LV10243 64K-Word By 16 , change product or specification without notice. High Speed Super Low Power SRAM 64K-Word By 16 Bit , 64K-Word By 16 Bit PIN DESCRIPTIONS Name Type A0 ­ A15 Input Function Address inputs , specification without notice. High Speed Super Low Power SRAM CS16LV10243 64K-Word By 16 Bit ABSOLUTE


    Original     		PDF 64K-Word CS16LV10243 CS16LV10243 16bits
    2004 - AT49BV322A

    Abstract: AT49BV322AT
    Text: Erase Architecture · · · · · · · · · · · · · ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 12 µs Fast Sector Erase Time ­ 300 ms Suspend/Resume Feature for Erase and , Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 12 mA Active ­ 13 µA Standby Data Polling, Toggle Bit, Ready/Busy for


    Original     		PDF 3308H AT49BV322A AT49BV322AT
    1999 - LRS1329

    Abstract: No abstract text available
    Text: Word /Byte Block ODeep power down current OOptimized F-V, 100 ns pin) . . . - 25 mA (Max. t , Blocking (Max.) * * * * 10 for F-V, pin) Architecture Two 4X- word /8K-byte Boot Blocks/ Six 4K- word /8K-byte Thirty-one 32X- word /64K-byte Main Blocks/ Top 0 Extended Cycling PA (Max , Erase Cycles 0 Enhanced Automated Suspend Options Word /Byte write Suspend to Read Block , , t,=lp s) 2V, 2V) SHARP LRS1329 2. Pin Configuration r INDEX Block erase and Word


    Original     		PDF LRS1329 LRS1329) MFM2-J11601 z000bOL 000OOO LCSPO72-P-081 LRS1329
    1999 - 8004 memory

    Abstract: AT49F8004 T8004
    Text: (T) Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout Two 8K Word (16K Byte) Sectors with Individual Write Lockout Four 4K Word (8K Byte) Sectors with Individual Write Lockout ­ AT49F8004(T) Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout Eight 4K Word (8K Byte) Sectors with Individual Write Lockout Fast Word Program Time - 10 µs Fast Sector


    Original     		PDF AT49F8011 AT49F8004 1264B 07/99/xM 8004 memory T8004
    2003 - AT49BV32XA

    Abstract: No abstract text available
    Text: Architecture · · · ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 12 µs Fast Sector Erase Time , Sector by Suspending Erase of a Different Sector ­ Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 12 mA Active ­ 13 µA , (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode) Selects Byte or Word Mode No Connect


    Original     		PDF 3308D AT49BV32XA
    2005 - AT49SV322A

    Abstract: AT49SV322AT
    Text: Erase Architecture · · · · · · · · · · · · · · ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 12 µs Fast Sector Erase Time ­ 300 ms Suspend/Resume Feature for Erase and , Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 12 mA Active ­ 13 µA Standby Data Polling, Toggle Bit, Ready/Busy for


    Original     		PDF 3360E AT49SV322A AT49SV322AT
    1997 - Not Available

    Abstract: No abstract text available
    Text: €“ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 12 µs Fast Sector Erase Time – 300 ms , Suspending Erase of a Different Sector – Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation – 12 mA Active – 13 µA Standby , /O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode) BYTE Selects Byte or Word


    Original     		PDF 3360Câ
    2006 - Not Available

    Abstract: No abstract text available
    Text: Architecture ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 10 µs Fast Sector Erase Time ­ 100 , Suspending Erase of a Different Sector ­ Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation ­ 10 mA Active ­ 15 µA Standby VPP Pin for Write Protection and Accelerated , upon the state of the control inputs. 4.4 Erase Before a word can be reprogrammed, it must be


    Original     		PDF 3581D
    2005 - Not Available

    Abstract: No abstract text available
    Text: Erase Architecture ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 12 µs Fast Sector Erase , Sector by Suspending Erase of a Different Sector ­ Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 12 mA Active ­ 13 µA , write control lines are required for writing into the device. This mode (Single Pulse Byte/ Word Program


    Original     		PDF 3360E
    2003 - AT49SV322A

    Abstract: AT49SV322AT
    Text: Erase Architecture · · · · · · · · · · · · · ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 12 µs Fast Sector Erase Time ­ 300 ms Suspend/Resume Feature for Erase and , Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 12 mA Active ­ 13 µA Standby Data Polling, Toggle Bit, Ready/Busy for


    Original     		PDF
    2005 - Not Available

    Abstract: No abstract text available
    Text: Architecture ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 12 µs Fast Sector Erase Time ­ 300 , Suspending Erase of a Different Sector ­ Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 12 mA Active ­ 13 µA Standby Data Polling , / Word Program) is exited by powering down the device, or by pulsing the RESET pin low for a minimum of


    Original     		PDF 3308I
    2005 - AT49BV322DT

    Abstract: AT49BV322D
    Text: Erase Architecture · · · · · · · · · · · · · ­ Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time ­ 10 µs Fast Sector Erase Time ­ 100 ms Suspend/Resume Feature for Erase and , Supports Reading Any Byte/ Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/ Word Low-power Operation ­ 10 mA Active ­ 15 µA Standby Data Polling, Toggle Bit, Ready/Busy for


    Original     		PDF
    1999 - AT49BV1604

    Abstract: AT49BV1604T AT49BV1614 AT49BV1614T AT49BV16X4
    Text: · · · · · · · · ­ Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout ­ Eight 4K Word (8K Byte) Sectors with Individual Write Lockout ­ Two 16K Word (32K Byte) Sectors with Individual Write Lockout Fast Word Program Time - 20 µs Fast Sector Erase Time - 200 ms Dual Plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word , Two 16K Word and Six 32K Word Sectors Memory Plane B: Twenty-four 32K Word Sectors Erase Suspend Capability ­


    Original     		PDF 0925H 08/99/xM AT49BV1604 AT49BV1604T AT49BV1614 AT49BV1614T AT49BV16X4
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