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60W POWER AMPLIFIER CIRCUIT Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2013 - Not Available

Abstract: No abstract text available
Text: www.triquint.com TGA2312-FL X-band 60W GaN Power Amplifier Application Circuit Notes: To prevent damage to , TGA2312-FL X-band 60W GaN Power Amplifier Applications  Commercial and Military Radar ï , : Subject to change without notice www.triquint.com TGA2312-FL X-band 60W GaN Power Amplifier , : Subject to change without notice www.triquint.com TGA2312-FL X-band 60W GaN Power Amplifier , www.triquint.com TGA2312-FL X-band 60W GaN Power Amplifier Typical Performance Conditions unless otherwise


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PDF TGA2312-FL 100us, TGA2312-FL 48dBm
2013 - Not Available

Abstract: No abstract text available
Text: 60W GaN Power Amplifier Application Circuit Notes: To prevent damage to the device due to , TGA2312-FL X-band 60W GaN Power Amplifier Applications  Commercial and Military Radar ï , : Subject to change without notice www.triquint.com TGA2312-FL X-band 60W GaN Power Amplifier , : Subject to change without notice www.triquint.com TGA2312-FL X-band 60W GaN Power Amplifier , www.triquint.com TGA2312-FL X-band 60W GaN Power Amplifier Typical Performance Conditions unless otherwise


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PDF TGA2312-FL 100us, TGA2312-FL 48dBm
FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
Text: layout The example presented today will be that of the pushpull circuit . 60-W WCDMA Amplifier Components The RF circuit elements of the 60-W amplifier are the Fujitsu FLL600IQ-2C, 60-W push-pull power , the 60W WCDMA amplifier using the FLL600IQ-2C DRAIN BIAS CIRCUIT 2X 20pf D1 G1 S1 S2 , FUJITSU APPLICATION NOTE - No 005 60-W , 2.11 ­ 2.17 GHz Push-Pull Amplifier for IMT-2000 Base , repeatability · High Power-Added Efficiency SUMMARY: A 60-W push-pull amplifier design for the


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PDF IMT-2000 FLL600IQ-2C 151mA FUJITSU MICROWAVE TRANSISTOR 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B GAAS FET AMPLIFIER f 10Mhz to 2 GHz
2011 - Not Available

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H4452M1A RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp , Voltage (VGG1) Power Control FEATURES 2 • Pout> 60W , T>40% @ VDD=12.5V, VGG1=3.4V,VGG=5V, Pin , RF Power Modules > RA60H4452M1A RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For Digital , TEST BLOCK DIAGRAM < Silicon RF Power Modules > RA60H4452M1A RoHS Compliance, 440-520MHz 60W , < Silicon RF Power Modules > RA60H4452M1A RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For


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PDF RA60H4452M1A 440-520MHz RA60H4452M1A 60-watt 520-MHz
2011 - RA80H1415M1

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V , POWER < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W , VOLTAGE < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W , RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp , (Case) < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W


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PDF RA80H1415M1 144-148MHz 136-174MHz RA80H1415M1 80-watt 148-MHz
2011 - Not Available

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp , the input power . FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout> 60W , < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE , Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TEST BLOCK DIAGRAM Power Meter 1 2 Spectrum , electric wave obstacle for equipment. PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER


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PDF RA60H3847M1 378-470MHz RA60H3847M1 60-watt 470-MHz
2011 - Not Available

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp , < Silicon RF Power Modules > RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE , Power Modules > RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO , < Silicon RF Power Modules > RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE , , 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TEST BLOCK DIAGRAM Power Meter 1 Signal


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PDF RA60H4452M1 440-520MHz RA60H4452M1 60-watt 520-MHz
2011 - RA60H1317M1

Abstract: No abstract text available
Text: Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp , :Apr.2011 1 < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V , .2011 2 < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 , ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TEST BLOCK DIAGRAM Power Meter 1 2 DUT 3 4 5 , ) EQUIVALENT CIRCUIT Publication Date :Apr.2011 7 < Silicon RF Power Modules


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PDF RA60H1317M1A 136-174MHz RA60H1317M1A 60-watt 174-MHz RA60H1317M1
2011 - Not Available

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp , Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO , ) Frequency f(MHz) < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 , Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO , Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO


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PDF RA60H3847M1 378-470MHz RA60H3847M1 60-watt 470-MHz
2011 - 400-470MHz

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp , the input power . FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout> 60W , .2011 1 < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage , Date :Apr.2011 3 < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W , < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE


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PDF RA60H4047M1 400-470MHz RA60H4047M1 60-watt 470-MHz
2002 - 4584

Abstract: STK4141 60W POWER AMPLIFIER 45842
Text: line. Specified Transformer Power Supply (Equivalent to MG-200) Equivalent Circuit No. 4584-2/3 STK4201V Sample Application Circuit : 60W min 2channel AF Power Amplifier s No , Ordering number: EN 4584A Thick Film Hybrid IC STK4201V AF Power Amplifier (Split Power Supply) ( 60W + 60W min, THD = 0.08%) Features Package Dimensions · The STK4201II series (THD , muting circuit to cut off various kinds of pop noise. · Current mirror circuit application reduces


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PDF STK4201V STK4201II STK4201V STK4141X STK4201V] 15Not 4584 STK4141 60W POWER AMPLIFIER 45842
1997 - STK4141X

Abstract: STK4201 45842 4584 applications circuit diagram transformer electric power supply MG-200 D2593YK MG-200 STK4201II STK4201V
Text: line. Specified Transformer Power Supply (Equivalent to MG-200) Equivalent Circuit No. 4584-2/3 STK4201V Sample Application Circuit : 60W min 2channel AF Power Amplifier s No , Ordering number: EN 4584A Thick Film Hybrid IC STK4201V AF Power Amplifier (Split Power Supply) ( 60W + 60W min, THD = 0.08%) Features Package Dimensions · The STK4201II series (THD , muting circuit to cut off various kinds of pop noise. · Current mirror circuit application reduces


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PDF STK4201V STK4201II STK4201V STK4141X STK4201V] STK4201 45842 4584 applications circuit diagram transformer electric power supply MG-200 D2593YK MG-200
2011 - RA60H4047M

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp , the output power with the input power . BLOCK DIAGRAM 2 3 1 4 5 1 • P > 60W , PACKAGE CODE: H2M < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V , €” — < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 , < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE


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PDF RA60H4047M1 400-470MHz RA60H4047M1 60-watt 470-MHz RA60H4047M
2011 - Not Available

Abstract: No abstract text available
Text: Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp , Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO , RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE , IDD (A) 100 < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W , Fin (GND) < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2


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PDF RA60H1317M1A 136-174MHz RA60H1317M1A 60-watt 174-MHz
2011 - RA60H4452M1

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp , the input power . FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout> 60W , < Silicon RF Power Modules > RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE , RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TEST BLOCK DIAGRAM Power Meter , EQUIVALENT CIRCUIT 3 1 4 5 2 Publication Date :Apr.2011 6 < Silicon RF Power Modules


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PDF RA60H4452M1 440-520MHz RA60H4452M1 60-watt 520-MHz
2011 - RA60H131

Abstract: RA60H1317M-101
Text: Power Modules > RA60H1317M RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For , RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO TEST BLOCK DIAGRAM Power Meter 1 , CIRCUIT 2 3 1 4 5 Publication Date : Oct.2011 6 Power Modules , Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO Output Power Control: Depending on , ) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be


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PDF RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz RA60H131 RA60H1317M-101
60w audio amplifier circuit diagram

Abstract: transistor c 5171 STK405-120 80w audio amplifier circuit diagram stk405 STK405-010 STK405-030 STK405-050 STK405-090 STK405-100
Text: Ordering number: EN * 5171 smYOi Thick Film Hybrid IC No. * 5171 STK405-100 2ch AF Power Amplifier (Split Power Supply) 60W + 60W min,THD = 10% Preliminary Overview The STK405-100, a member of the-STK405-000 series, is a low-cost, 2-channel audio power amplifier hybrid IC that is ideal for a wide , of pattern layout on operating characteristics • External bootstrap circuit not necessary • Standby operation possible using external circuit • Voltage gain VG = 26dB for easy gain distribution


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PDF STK405-100 STK405-100, the-STK405-000 STK401-000 60w audio amplifier circuit diagram transistor c 5171 STK405-120 80w audio amplifier circuit diagram stk405 STK405-010 STK405-030 STK405-050 STK405-090 STK405-100
2011 - Not Available

Abstract: No abstract text available
Text: Power Modules > RA60H1317M RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For , INFORMATION: SUPPLY FORM RA60H1317M-101 Gate Voltage (VGG), Power Control 3 • Pout> 60W , ηT>40 , Power Modules > RA60H1317M RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE , ) Power Modules > RA60H1317M RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE , 3 4 5 Power Modules > RA60H1317M RoHS Compliance , 135-175MHz 60W 12.5V, 3


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PDF RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz
FUJITSU MICROWAVE TRANSISTOR

Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
Text: .787 Table 1. Arlon substrate parameters Amplifier Components The RF circuit elements of the 60W amplifier are the Fujitsu FLL600IQ-3, 60-W power GaAs FET device, two 50-ohm coaxial baluns(2), several , the 60W WCDMA amplifier using the FLL600IQ-3 DRAIN BIAS CIRCUIT .8pf 2X 20pf D1 G1 , FUJITSU APPLICATION NOTE - No 007 60-W , 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station , Description The 2.5­2.7GHz, 60-W linear amplifier design presented in the following sections is achieved by


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PDF FLL600IQ-3 60-Wpush-pull 117mA FUJITSU MICROWAVE TRANSISTOR understanding thermal basics for microwave power Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
2004 - Anaren Microwave

Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon s-parameter
Text: high power , UMTS band 60W Doherty amplifier . This new model will be shown to be capable of providing accurate predictions of power , gain, efficiency and most importantly, linearity of the complete amplifier , Signal Power Sweep Figure 4. 60W Doherty Amplifier Prototype 3. Results 50 Power (dBm), PAE , Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood , design of a 60W Doherty amplifier for the UMTS band (2.11GHz ­ 2.17GHz). When designing a Doherty


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2011 - Igg22

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H3847M1A RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp , RF Power Modules > RA60H3847M1A RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For Digital , , 378-470MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio TEST BLOCK DIAGRAM < Silicon RF Power , EQUIVALENT CIRCUIT Publication Date : Jan.2014 10 < Silicon RF Power Modules > RA60H3847M1A , .2014 11 < Silicon RF Power Modules > RA60H3847M1A RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage


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PDF RA60H3847M1A 378-470MHz RA60H3847M1A 60-watt 470-MHz Igg22
2011 - s band

Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 ­ 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 , . FEATURES Push-pull configuration High output power Pout= 60W (TYP.) @f=1.9 - 2.0GHz High power gain GLP , QUALITY IG item 01 : 1.9 - 2.0 GHz band power amplifier RECOMMENDED BIAS CONDITIONS VDS , 4 < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 ­ 2.0 GHz BAND / 60W


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PDF MGFL48V1920 MGFL48V1920 20ohm s band
1996 - hf class AB power amplifier mosfet

Abstract: AN-948 IRF9530 mosfet circuit diagram amplifier circuit diagram HEXFET Guide HEXFEt Power MOSFET Design Guide circuit diagram of mosfet based power supply 60w audio amplifier circuit diagram power mosfet audio amplifier class-A mosfet HF amplifier
Text: printed circuit board: Q6 R7 The amplifier input stage requires additional power supply ripple , . 2. AMPLIFIER PERFORMANCE (a) Output Power : To achieve 60W rms into a 4 ohm load, the current in the , AN-948 (v.Int) Linear Power Amplifier Using Complementary HEXFETs® (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply , the quiescent power dissipation The design described will deliver 60W rms into a 4 ohm load when


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PDF AN-948 hf class AB power amplifier mosfet AN-948 IRF9530 mosfet circuit diagram amplifier circuit diagram HEXFET Guide HEXFEt Power MOSFET Design Guide circuit diagram of mosfet based power supply 60w audio amplifier circuit diagram power mosfet audio amplifier class-A mosfet HF amplifier
1996 - IRF9530 mosfet circuit diagram

Abstract: AN-948 HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet complementary of irf9530 IR 948 amplifier circuit diagram transistor 2n5088 equivalent transistor f 948 IRF9530 mosfet
Text: printed circuit board: Q6 R7 The amplifier input stage requires additional power supply ripple , . 2. AMPLIFIER PERFORMANCE (a) Output Power : To achieve 60W rms into a 4 ohm load, the current in the , AN-948 (v.Int) Linear Power Amplifier Using Complementary HEXFETs® (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply , the quiescent power dissipation The design described will deliver 60W rms into a 4 ohm load when


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PDF AN-948 IRF9530 mosfet circuit diagram AN-948 HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet complementary of irf9530 IR 948 amplifier circuit diagram transistor 2n5088 equivalent transistor f 948 IRF9530 mosfet
1996 - amplifier circuit diagram

Abstract: HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet IRF9530 mosfet circuit diagram common base amplifier circuit designing 60w audio amplifier circuit diagram calculation of transformer earthing resistor AN-948 class AB hf bipolar DIODE IN4002
Text: bias circuit and reduce the quiescent power dissipation The design described will deliver 60W rms into , amplifier circuit diagram is shown in Figure 1, and the components listing in Table 1. Split power supply , followed. 2. AMPLIFIER PERFORMANCE (a) Output Power : To achieve 60W rms into a 4 ohm load, the current , Index AN-948 (v.Int) Linear Power Amplifier Using Complementary HEXFETs® (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit


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PDF AN-948 amplifier circuit diagram HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet IRF9530 mosfet circuit diagram common base amplifier circuit designing 60w audio amplifier circuit diagram calculation of transformer earthing resistor AN-948 class AB hf bipolar DIODE IN4002
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