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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LTC1156CNND Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP16, PLASTIC, DIP-16, MOSFET Driver
LTC1255N8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8, MOSFET Driver
LTC1255S8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, PLASTIC, SO-8, MOSFET Driver
LT1161IS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver
LT1161CS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver

60V 2A MOSFET N-channel Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
4134 mosfet

Abstract: Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel Power MOSFETs POWER MOSFET mosfet HRF3205 MOSFET 50V 100A N_CHANNEL MOSFET 100V MOSFET 100V 60A Mosfet
Text: . . 14A, 60V , 0.100 Ohm, N-Channel Power MOSFET , . 2A , 200V, 3.500 Ohm, N-Channel Power MOSFET , Jn tefsil N-Channel Standard Gate Power MOSFETs 4 PAGE 4-3 Power MOSFET Products , 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET . 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET


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PDF BUZ11 BUZ71 BUZ71A BUZ72A HRFZ44N HUF75307P3, HUF75307D3, HUF75307D3S HUF75309P3, HUF75309D3, 4134 mosfet Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel Power MOSFETs POWER MOSFET mosfet HRF3205 MOSFET 50V 100A N_CHANNEL MOSFET 100V MOSFET 100V 60A Mosfet
5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Text: Features Package RDSon=41mOhm@ ID=6.5A, VGS=10V SMD SO-8 N-Channel 60-V (D-S) MOSFET Si7370DP Dual N-Channel 60-V (D-S) 175ºC MOSFET RDSon=11mOhm@ ID=15.8A, VGS=10V Q-Level SMD , =10V SMD PowerPAK® SO-8 Dual N-Channel 60-V (D-S), 175°C MOSFET RDSon=80mOhm@ ID=3.7A, VGS , -6 Power MOSFET Product Name Status Description Features Package 2N7002K N-Channel 60-V , =47mOhm@ ID=4A, VGS=10V SMD SOT-23 (TO-236) P-Channel 60-V (D-S) MOSFET RDSon=340mOhm@ ID


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PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
2010 - Dual N-Channel MOSFET SOP8

Abstract: 60V dual N-Channel trench mosfet
Text: TSM4946D 60V Dual N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(m) 60 55 @ VGS = 10V 75 @ VGS , , Junction-to-Ambient 4/4 Version: A09 TSM4946D 60V Dual N-Channel MOSFET SOP-8 Mechanical Drawing DIM , , W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/5 Version: A09 TSM4946D 60V Dual N-Channel MOSFET , -8 SOP-8 Packing 2.5Kpcs / 13" Reel 2.5Kpcs / 13" Reel Dual N-Channel MOSFET Note: "G" denote , . Symbol RJF RJA Limit 32 62.5 Unit o o C/W C/W 1/1 Version: A09 TSM4946D 60V


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PDF TSM4946D TSM4946DCS Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet
2010 - TSM10N06

Abstract: No abstract text available
Text: TSM10N06 60V N-Channel MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source , Version: A10 TSM10N06 60V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise , . 2/6 Version: A10 TSM10N06 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC , 3/6 Version: A10 TSM10N06 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC , Operating Area 4/6 Version: A10 TSM10N06 60V N-Channel MOSFET TO-252 Mechanical Drawing DIM


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PDF TSM10N06 O-252 TSM10N06CP TSM10N06
2009 - LT4946C

Abstract: liteon inverter LT494
Text: LT4946C/LT4946C-G Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The LT4946C is the Dual , oz copper Rev 0. Oct. 2009 LT4946C/LT4946C-G Dual N-Channel 60-V (D-S) MOSFET Electrical , N-Channel 60-V (D-S) MOSFET Typical Characteristics (TJ =25 Noted) Rev 0. Oct. 2009 LT4946C/LT4946C-G Dual N-Channel 60-V (D-S) MOSFET Typical Characteristics (TJ =25 Noted) Rev 0. Oct. 2009 LT4946C/LT4946C-G Dual N-Channel 60-V (D-S) MOSFET SOP-8 Package Outline NOTES: 1. PKG ALL SURFACES


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PDF LT4946C/LT4946C-G LT4946C 300us, liteon inverter LT494
Not Available

Abstract: No abstract text available
Text: TSM4436 60V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain , Mounted on FR4 Board, t  10 sec. 1/6 Version: A09 TSM4436 60V N-Channel MOSFET Electrical , Version: A09 TSM4436 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless , Version: A09 TSM4436 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless , , W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: A09 TSM4436 60V N-Channel MOSFET


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PDF TSM4436 TSM4436CS
2010 - N-Channel

Abstract: M6055
Text: TSM4946D 60V Dual N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(m) 60 55 @ VGS = 10V 75 @ VGS , Transient Impedance, Junction-to-Ambient 4/6 Version: B09 TSM4946D 60V Dual N-Channel MOSFET , 60V Dual N-Channel MOSFET Notice Specifications of the products displayed herein are subject to , -8 SOP-8 Packing 2.5Kpcs / 13" Reel 2.5Kpcs / 13" Reel Dual N-Channel MOSFET Note: "G" denote , . Symbol RJF RJA Limit 32 62.5 Unit o o C/W C/W 1/6 Version: B09 TSM4946D 60V Dual


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PDF TSM4946D TSM4946DCS N-Channel M6055
2010 - LT4446

Abstract: TA7042 60V 2A MOSFET N-channel RA0812
Text: LT4446AC N-Channel 60-V MOSFET GENERAL DESCRIPTION FEATURES The LT4446AC is the N-Channel , N-Channel 60-V MOSFET Electrical Characteristics (TA =25 Unless Otherwise Specified) Symbol Parameter , N-Channel 60-V MOSFET Typical Characteristics (TJ =25 Noted) Rev 1. Nov. 2010 LT4446AC N-Channel 60-V MOSFET Typical Characteristics (TJ =25 Noted) Rev 1. Nov. 2010 LT4446AC N-Channel 60-V , N-Channel 60-V MOSFET Important Notice and Disclaimer LSC reserves the right to make changes to this


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PDF LT4446AC LT4446AC LT4446 TA7042 60V 2A MOSFET N-channel RA0812
2010 - LT4946C

Abstract: Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet inverter ccfl
Text: LT4946C/LT4946C-G Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The LT4946C , 60-V (D-S) MOSFET Electrical Characteristics (TA =25 Unless Otherwise Specified) Parameter , =4.5V RG=1 ns LT4946C/LT4946C-G Dual N-Channel 60-V (D-S) MOSFET Typical Characteristics (TJ =25 Noted) Rev 1. Nov. 2010 LT4946C/LT4946C-G Dual N-Channel 60-V (D-S) MOSFET Typical Characteristics (TJ =25 Noted) Rev 1. Nov. 2010 LT4946C/LT4946C-G Dual N-Channel 60-V (D-S) MOSFET


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PDF LT4946C/LT4946C-G LT4946C Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet inverter ccfl
2011 - TSM2308

Abstract: No abstract text available
Text: TSM2308 60V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT , 80 150 Unit o o C/W C/W 1/6 Version: A11 TSM2308 60V N-Channel MOSFET Electrical , operating temperature. 2/6 Version: A11 TSM2308 60V N-Channel MOSFET Electrical Characteristics , Forward Voltage 3/6 Version: A11 TSM2308 60V N-Channel MOSFET Electrical Characteristics Curve , 60V N-Channel MOSFET SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION


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PDF TSM2308 OT-23 TSM2308CX TSM2308
2010 - TSM4436

Abstract: No abstract text available
Text: TSM4436 60V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3 , o o C/W C/W 1/6 Version: A09 TSM4436 60V N-Channel MOSFET Electrical , essentially independent of operating temperature. 2/6 Version: A09 TSM4436 60V N-Channel MOSFET , Source-Drain Diode Forward Voltage 3/6 Version: A09 TSM4436 60V N-Channel MOSFET Electrical , TSM4436 60V N-Channel MOSFET SOP-8 Mechanical Drawing DIM A B C D F G K M P R SOP-8 DIMENSION


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PDF TSM4436 TSM4436CS TSM4436
2010 - LT4946

Abstract: 60V dual N-Channel trench mosfet LT-494 Dual N-Channel MOSFET SOP8
Text: LT4946 Dual N-Channel 60-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4946 is the Dual , , 2007-Ver4.0 01 LT4946 Dual N-Channel 60-V Power MOSFET Electrical Characteristics (TA =25 , % Rev 2. Nov. 2010 Nov, 2007-Ver4.0 02 LT4946 Dual N-Channel 60-V Power MOSFET Typical , Dual N-Channel 60-V Power MOSFET SOP-8 Package Outline NOTES: 1. PKG ALL SURFACES ARE Ra0 , . Nov. 2010 Nov, 2007-Ver4.0 05 LT4946 Dual N-Channel 60-V Power MOSFET Important Notice and


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PDF LT4946 LT4946 2007-Ver4 60V dual N-Channel trench mosfet LT-494 Dual N-Channel MOSFET SOP8
marking A07

Abstract: TSM2N7002E TSM2N7002ECX
Text: TSM2N7002E 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted , TSM2N7002E 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25°c, unless On-Resistance vs , (^C) l0 = 2E0i/A TSM2N7002E 60V N-Channel MOSFET SOT-23 Mechanical Drawing D - — G T , TSM2N7002E 60V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to , TAIWAN SEMICONDUCTOR (pb) RoHS COMPLIANCE SOT-23 # 1 2 SOT-323 1 2 TSM2N7002E 60V


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PDF OT-23 OT-323 TSM2N7002E TSM2N7002ECX OT-23 7002ECU OT-323 marking A07 TSM2N7002E
2004 - Led driver 100W schematic

Abstract: CRCW040254K9FKED ULR-G-1-1206-R003-1-LF-SLT 60v to 57.6V battery charger BAT46WJ WSL2010R0500FEA 50w LED driver CRCW06031M00FKED 0402YD104KAT DC1666A
Text: from 4.7V to 60V , and drives up to 25V of LEDs at 2A . DC1666A features both PWM and analog dimming of , X7R 4.7µF 50V 10% 1210 DIODE Single Schottky Barrier Diode SOD-323 INDUCTOR 10µH MOSFET N-Channel 60V , drops below 56.2V. DC1666A PWM dimming is simple. The PWM dimming MOSFET turns the LED string on and off , 44.2k R7 = 1M, R9 = 44.2k PVIN = 20V, VLED = 25V, ILED = 2A PVIN = 24V, VLED = 25V, ILED = 2A PVIN = 30V, VLED=25V, ILED = 2A R13 = 332k and R6 = 115k R13 = 332k and R6 = 115k R11 = 54.9k, R19 = 1M R11 = 54.9k


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PDF DC1666A LT3791 300kHz dc1666af Led driver 100W schematic CRCW040254K9FKED ULR-G-1-1206-R003-1-LF-SLT 60v to 57.6V battery charger BAT46WJ WSL2010R0500FEA 50w LED driver CRCW06031M00FKED 0402YD104KAT
TSM2N7002

Abstract: TSM2N7002CX N-CHANNEL MOSFET 30V 2A SOT-23 n-channel mosfet SOT-23
Text: TSM2N7002 60V N-Channel MOSFET SOT-23 # 1 2 Pin Definition: 1.Gate 2. Source 3. Drain , /6 Version: A07 TSM2N7002 60V N-Channel MOSFET Electrical Specifications (Ta = 25°C, unless , " \ Switching Test Circuit Switcliin Waveforms 2/6 Version: A07 TSM2N7002 60V N-Channel MOSFET , 1.2 1.4 1.6 Vso - Source-to-Drain Voltage (V) 3/6 Version: A07 TSM2N7002 60V N-Channel MOSFET , , L=Dec) L = Lot Code 5/6 Version: A07 TSM2N7002 60V N-Channel MOSFET Notice Specifications of the


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PDF TSM2N7002 OT-23 TSM2N7002CX OT-23 TSM2N7002 N-CHANNEL MOSFET 30V 2A SOT-23 n-channel mosfet SOT-23
1993 - Q2 220uF 10v

Abstract: CTX62-2-MP NP-2A-C1-0R020J 2360a CTX02 coiltronics CTX02-11715-2 Si9410DY MBRS140T3 LTC1149 LTC1148
Text: providing 5V at 2A from an input voltage of 5.5V to capacitor discharges 50mV, the LTC1148 briefly turns , capacitor. The timing capaciat 97% and exceeds 90% from 10mA to 2A with a 10V Burst Mode is a trademark of , SENSE ­ CT NDRIVE SGND 14 L1 62µH RSENSE 50m + COUT 5V/ 2A 220µF × 2 10V , FERRITE CORE (SURFACE MOUNT) , ALL OTHER CAPACITORS ARE CERAMIC Figure 1 LTC1148 (5.5V-13.5V to 5V/ 2A , highly efficient at output currents of under 2A , P-channel MOSFETs can become a dominate loss element at


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PDF LTC1148 LTC1149 60kHz 90kHz-CON) 10SA220M, NP-2A-C1-0R020J, CTX50-5-52, LTC1149-5 2V-36V Q2 220uF 10v CTX62-2-MP NP-2A-C1-0R020J 2360a CTX02 coiltronics CTX02-11715-2 Si9410DY MBRS140T3
2012 - MOSFET

Abstract: No abstract text available
Text: ACE4826B Dual N-Channel Enhancement Mode MOSFET Description This N-Channel enhancement mode , controlled DC/DC Converter and push-pull DC/AC Inverter Systems. Features    VDS 60V , ACE4826B Dual N-Channel Enhancement Mode MOSFET Ordering information ACE4826B XX + H Halogen - free Pb , IGSS VDS=0V,VGS=±20V ±100 uA IDSS VDS= 60V , VGS=0V 1 uA 1.4 3 V VGS , © Drain-Source Diode Characteristics And Maximum Ratings Diode Forward Voltage VSD IS= 2A , VGS=0V 0.5


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PDF ACE4826B MOSFET
2010 - SiB914

Abstract: LT3850 TRANZORB Si4230 4925 B mosfet LTC4365 SI4946 SI9945 tranz LTC4365ITS8
Text: 35 4365 G15 Turn-Off Timing GATE GATE 100µF 12 LOAD ON VOUT , 60V SI9945 DUAL NCH MOSFET , 10µF 1k LOAD ON VOUT , 60V DUAL NCH MOSFET 2.5ms/DIV 4365 G16 3V/DIV SHDN GND 250µs/DIV , GATE 4365 F12 Figure 12. Small Footprint Single MOSFET Application Protects Against 60V 4365 , to 60V Reverse Supply Protection to ­40V Blocks 50Hz and 60Hz AC Power No Input Capacitor or TVS , Enhances External N-Channel MOSFET Low Operating Current: 125µA Low Shutdown Current: 10µA Fault Status


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PDF LTC4365 TSOT-23 LTC4260 LTC4352 LTC4354 LTC4355 LTC3827/LTC3827-1 4365f SiB914 LT3850 TRANZORB Si4230 4925 B mosfet LTC4365 SI4946 SI9945 tranz LTC4365ITS8
1999 - 24v 12v 10A regulator

Abstract: 24v 12v 20A regulator CD4047 100KHZ CIRCUITS Step-up 12V to 36V 300mA cd4047 ic IC CD4047 CD4047 equivalent ic IRFZ44 "pin compatible" alternator dual voltage 12V 24V 24V to 12V REGULATOR IC
Text: 60V 10mA to 500mA LT1776 7.4V to 60V 10mA to 500mA LT1076HV 8V to 64V to 2A LT1074HV 8V to , Voltage Regulators s s s s Input Voltage Range to 60V or 75V 1A, 2A and 5A Onboard Switches (see , to 60V 8V to 45V 8V to 64V 1A* 1.25A* 1.25A* 1.25A* 1A 2.5A* 2A 2A 2.5A* 5A* 5A* 5A , including switching regulators that operate to 60V or higher for the new 42V standard. These integrated , s Operation to 60V Current Mode Operation Synchronous Dual N-Channel Drive s s s


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PDF 4V/36V LTC1149 LT1074HV/LT1076HV LT1676/LT1776 LT1680 LT1070/71/72 LT1170/71/72 LT1080 LT1161 LT1170/1/2 24v 12v 10A regulator 24v 12v 20A regulator CD4047 100KHZ CIRCUITS Step-up 12V to 36V 300mA cd4047 ic IC CD4047 CD4047 equivalent ic IRFZ44 "pin compatible" alternator dual voltage 12V 24V 24V to 12V REGULATOR IC
LT3850

Abstract: No abstract text available
Text: 12Ω LOAD ON VOUT , 60V SI9945 DUAL NCH MOSFET 5V/DIV VOUT VOUT GND GATE 5 0 , GND 10µF 1k LOAD ON VOUT , 60V DUAL NCH MOSFET 2.5ms/DIV 4365 G16 3V/DIV SHDN GND , 12. Small Footprint Single MOSFET Application Protects Against 60V 4365f 13 LTC4365 , n n DESCRIPTION Wide Operating Voltage Range: 2.5V to 34V Overvoltage Protection to 60V , External N-Channel MOSFET Low Operating Current: 125µA Low Shutdown Current: 10µA Fault Status Output


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PDF LTC4365 TSOT-23 LTC4260 LTC4352 LTC4354 LTC4355 4365f LT3850
2011 - SiB914

Abstract: Si4230 LTC4365ITS8 LT3850 LTC4356 marking r4b diode LTC4365 LTC4365IDDB 12V 1A MOSFET N-channel LTC4365CDDB
Text: G13 VOUT GND 5V/DIV 100F 12 LOAD ON VOUT , 60V SI9945 DUAL NCH MOSFET VIN = 12V 10 , VOUT , 60V SI9945 DUAL NCH MOSFET 5V/DIV VOUT VOUT GND GATE 5 0 Turn-On Timing , , 60V DUAL NCH MOSFET 2.5ms/DIV 4365 G16 3V/DIV SHDN GND 250s/DIV 4365 G17 3V/DIV , GND IIN 2A /DIV Place the bypass capacitors at VOUT as close as possible to the external MOSFET , Voltage Range: 2.5V to 34V Overvoltage Protection to 60V Reverse Supply Protection to ­40V Blocks 50Hz


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PDF LTC4365 10oldback LTC4260 LTC4352 LTC4354 LTC4355 4365f SiB914 Si4230 LTC4365ITS8 LT3850 LTC4356 marking r4b diode LTC4365 LTC4365IDDB 12V 1A MOSFET N-channel LTC4365CDDB
Not Available

Abstract: No abstract text available
Text: Ordering number : ENA2185A ECH8690 Power MOSFET 60V , 4.7A, 55m - 60V , -3.5A, 94m Complememtary , =1MHz ID=1mA, VGS=0V VDS= 60V , VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID= 2A ID= 2A , VGS=10V ID , Nch+Pch MOSFET · Protection diode in · Halogen free compliance http://onsemi.com Specifications , Test Circuit. VDS=-20V, f=1MHz ID=-1mA, VGS=0V VDS=- 60V , VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=-1mA VDS , Pattern Example No.A2185-7/8 ECH8690 Note on usage : Since the ECH8690 is a MOSFET product


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PDF ENA2185A ECH8690 PW10s, 1200mm2 -30here A2185-8/8
Not Available

Abstract: No abstract text available
Text: Ordering number : ENA2185A ECH8690 Power MOSFET 60V , 4.7A, 55m - 60V , -3.5A, 94m Complememtary , :RDS(on)1=73m (typ.) • 4V drive • Nch+Pch MOSFET • Protection diode in • Halogen free , Current IDSS VDS= 60V , VGS=0V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID= 2A RDS(on)1 ID= 2A , VGS=10V 42 55 mΩ RDS(on)2 ID=1A, VGS=4.5V 53 74 mâ


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PDF ENA2185A ECH8690 A2185-8/8
Not Available

Abstract: No abstract text available
Text: Ordering number : ENA2185B ECH8690 Power MOSFET 60V , 4.7A, 55mΩ - 60V , -3.5A, 94mâ , :RDS(on)1=73mΩ(typ.) • 4V drive • Nch+Pch MOSFET • Protection diode in • Halogen free , Voltage Drain Current IDSS VDS= 60V , VGS=0V Gate to Source Leakage Current IGSS VGS= , | VDS=10V, ID= 2A RDS(on)1 ID= 2A , VGS=10V 42 55 mΩ RDS(on)2 ID=1A, VGS=4.5V 53 , Source Breakdown Voltage V(BR)DSS ID=-1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=- 60V


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PDF ENA2185B ECH8690 A2185-8/8
Not Available

Abstract: No abstract text available
Text: Ordering number : ENA2185 ECH8690 Power MOSFET 60V , 4.7A, 55mΩ - 60V , -3.5A, 94mâ , :RDS(on)1=73mΩ(typ.) • 4V drive • Nch+Pch MOSFET • Protection diode in • Halogen free , Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS= 60V , VGS , =10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID= 2A RDS(on)1 ID= 2A , VGS , )DSS ID=-1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=- 60V , VGS=0V -1 μA


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PDF ENA2185 ECH8690 A2185-9/9
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