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Part Manufacturer Description Datasheet Download Buy Part
LT1358CS8#TRPBF Linear Technology LT1358 - Dual 25MHz, 600V/µs Op Amps; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1359IS#PBF Linear Technology LT1359 - Quad 25MHz, 600V/µs Op Amps; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C
LT1357CS8 Linear Technology LT1357 - 25MHz, 600V/us Op Amp; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1359CS14#TR Linear Technology LT1359 - Quad 25MHz, 600V/µs Op Amps; Package: SO; Pins: 14; Temperature Range: 0°C to 70°C
LT1358IS8 Linear Technology LT1358 - Dual 25MHz, 600V/µs Op Amps; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1358CS8#PBF Linear Technology LT1358 - Dual 25MHz, 600V/µs Op Amps; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C

600v 75a Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - 0/p569f

Abstract: No abstract text available
Text: -FZ062PA075SA-P993F08 600V 75A Al2O3 12mm IGBT3+Emitter Controlled Diode3 P56x equivalent 10-F0062PA075SA-P993F09 600V 75A Al2O3 17mm IGBT3+Emitter Controlled Diode3 P562-F10 10-FZ062PA075SA01-P993F18 600V 75A AlN 12mm IGBT3+Emitter Controlled Diode3 10-F0062PA075SA01-P993F19 600V 75A AlN 17mm IGBT3+Emitter Controlled Diode3 10-FZ062PA100SA-P994F08 600V 100A , overview - 600V 10-PZ062PA075SA-P993P08Y 75A Al2O3 12mm IGBT3+Emitter Controlled Diode3 10


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PDF 12-Sep-11 0/p569f
2008 - FGH75N60SFTU

Abstract: fgh75n60 DEVICE MARKING CODE 150A FGH75N60SF
Text: FGH75N60SF tm 600V , 75A Field Stop IGBT Features General Description · High Current , Corporation FGH75N60SF Rev. A 1 www.fairchildsemi.com FGH75N60SF 600V , 75A Field Stop IGBT , 30 - nC - 130 - nC www.fairchildsemi.com FGH75N60SF 600V , 75A Field Stop IGBT , Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH75N60SF 600V , 75A Field Stop IGBT Typical , FGH75N60SF 600V , 75A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-on


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PDF FGH75N60SF 100oC FGH75N60SF FGH75N60SFTU fgh75n60 DEVICE MARKING CODE 150A
2008 - FGH75N60UFTU

Abstract: fgh75n60
Text: FGH75N60UF 600V , 75A Field Stop IGBT December 2008 FGH75N60UF 600V , 75A Field Stop IGBT , Semiconductor Corporation 1 www.fairchildsemi.com FGH75N60UF Rev. A FGH75N60UF 600V , 75A Field Stop , FGH75N60UF 600V , 75A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output , Gate-Emitter Voltage, VGE [V] 20 FGH75N60UF Rev. A 3 www.fairchildsemi.com FGH75N60UF 600V , 75A , Powe Dissipation = 181W FGH75N60UF Rev. A 4 www.fairchildsemi.com FGH75N60UF 600V , 75A


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PDF FGH75N60UF FGH75N60UF FGH75N60UFTU fgh75n60
2009 - Not Available

Abstract: No abstract text available
Text: FGH75N60UF tm 600V , 75A Field Stop IGBT Features General Description • High , www.fairchildsemi.com FGH75N60UF 600V , 75A Field Stop IGBT April 2009 Device Marking Device Package , 130 - nC www.fairchildsemi.com FGH75N60UF 600V , 75A Field Stop IGBT Package Marking and , www.fairchildsemi.com FGH75N60UF 600V , 75A Field Stop IGBT Typical Performance Characteristics Figure 7 , 10 100 Frequency [kHz] 1000 www.fairchildsemi.com FGH75N60UF 600V , 75A Field Stop IGBT


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PDF FGH75N60UF 100oC
2009 - FGH75N60UF

Abstract: DEVICE MARKING CODE 150A induction heating ic 150a gto fgh75n60uftu PFC smps design 150A 100V gto fgh75n60
Text: FGH75N60UF tm 600V , 75A Field Stop IGBT Features General Description · High Current , Corporation FGH75N60UF Rev. A1 1 www.fairchildsemi.com FGH75N60UF 600V , 75A Field Stop IGBT , 600V , 75A Field Stop IGBT Package Marking and Ordering Information Figure 1. Typical Output , FGH75N60UF 600V , 75A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage , 10 100 Frequency [kHz] 1000 www.fairchildsemi.com FGH75N60UF 600V , 75A Field Stop IGBT


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PDF FGH75N60UF 100oC FGH75N60UF DEVICE MARKING CODE 150A induction heating ic 150a gto fgh75n60uftu PFC smps design 150A 100V gto fgh75n60
2008 - Not Available

Abstract: No abstract text available
Text: FGH75N60SF tm 600V , 75A Field Stop IGBT Features General Description • High , www.fairchildsemi.com FGH75N60SF 600V , 75A Field Stop IGBT December 2008 Device Marking Device Package , 130 - nC www.fairchildsemi.com FGH75N60SF 600V , 75A Field Stop IGBT Package Marking and , ] 20 www.fairchildsemi.com FGH75N60SF 600V , 75A Field Stop IGBT Typical Performance , 1000 4 10 100 Frequency [kHz] 1000 www.fairchildsemi.com FGH75N60SF 600V , 75A Field


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PDF FGH75N60SF 100oC FGH75N60SF
2010 - Not Available

Abstract: No abstract text available
Text: FGY75N60SMD 600V , 75A Field Stop IGBT Features General Description • High Current , Rev. A2 1 www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT March 2011 Symbol , www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT Thermal Characteristics Qg Total Gate Charge , 3 V mJ ns nC www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT Electrical , ] 20 www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT Typical Performance


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PDF FGY75N60SMD Power-247
2010 - FGY75N60

Abstract: 8V45 smart ups 750 circuit
Text: FGY75N60SMD 600V , 75A Field Stop IGBT September FGY75N60SMD 600V , 75A Field Stop IGBT , 1 www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT Thermal Characteristics , 2 www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT Electrical Characteristics , FGY75N60SMD 600V , 75A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output , www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT Typical Performance Characteristics Figure 7


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PDF FGY75N60SMD FGY75N60SMD Power-247 FGY75N60 8V45 smart ups 750 circuit
2010 - FGY75N60

Abstract: IGBT welder circuit smart ups 750 circuit welder inverter 160 dc inverter welder circuit Circuit of welder IGBT inverter igbt welder fgy75n60smd smps welder inverter
Text: FGY75N60SMD 600V , 75A Field Stop IGBT Features General Description · High Current , www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT March 2011 Symbol Parameter Typ. Max , www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT Thermal Characteristics Qg Total Gate Charge , mJ ns nC www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT Electrical , ] 20 www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT Typical Performance


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PDF FGY75N60SMD Power-247 FGY75N60 IGBT welder circuit smart ups 750 circuit welder inverter 160 dc inverter welder circuit Circuit of welder IGBT inverter igbt welder fgy75n60smd smps welder inverter
2010 - FGY75N60

Abstract: FGY75N60SMD smps welder inverter FGY75N welder inverter 160 dc FGY7
Text: FGY75N60SMD 600V , 75A Field Stop IGBT Features General Description · High Current , www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT October 2010 Symbol Parameter Typ. Max , www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT Thermal Characteristics Qg Total Gate Charge , mJ ns nC www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT Electrical , ] 20 www.fairchildsemi.com FGY75N60SMD 600V , 75A Field Stop IGBT Typical Performance


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PDF FGY75N60SMD Power-247 FGY75N60 FGY75N60SMD smps welder inverter FGY75N welder inverter 160 dc FGY7
2010 - Not Available

Abstract: No abstract text available
Text: FZ06NPA070FP01 preliminary datasheet NPC Application flowNPC 0 600V / 75A & 70A PS , Application flowNPC 0 Figure 5. Buck MOSFET 600V / 75A & 70A PS* Figure 6. Buck FRED Typical , Application Figure 12. Boost IGBT 600V / 75A & 70A PS* Figure 13. Typical average static loss as , ) 600V / 75A & 70A PS* 45 IoutRMS=Imax IoutRMS=Imax 40 20 35 15 30 25 10 20 15 , function of switching frequency Iout=f(fsw) 90 90 Iout (A) Iout (A) 600V / 75A & 70A PS* 80


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PDF FZ06NPA070FP01 00V/75A
2009 - solar inverter circuit

Abstract: Solar inverter power module 3kw inverter solar inverter pcb diode bridge 16A solar inverter 600v 75a diode 8a 600v 600v 20a diode solar power inverter
Text: 45m 75A 8A SiC diode non-isolated solar FZ06BIA045FH01 600V 45m 16A SiC diode 45m , Application FZ06BIA045FH02 600V 45m 16A SiC diode 45m 75A 8A SiC diode non-isolated solar , Application FZ06RIA045FH 600V fast 45m 75A 8A SiC diode isolated solar (secondary , 600V 75A three-level UPS three-level solar Part ­No Voltage Inverter Application FZ06NRA045FH 600V 45m 75A 16A SiC diode three-level solar with reactive power FZ06NRA045FH01


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PDF FZ06BIA045FH Vincotech-029-0409 solar inverter circuit Solar inverter power module 3kw inverter solar inverter pcb diode bridge 16A solar inverter 600v 75a diode 8a 600v 600v 20a diode solar power inverter
2010 - Not Available

Abstract: No abstract text available
Text: FZ06NPA070FP preliminary datasheet NPC Application flowNPC 0 600V / 75A & 70A PS , Application flowNPC 0 Figure 5. Buck MOSFET 600V / 75A & 70A PS* Figure 6. Buck FRED Typical , preliminary datasheet NPC Application flowNPC 0 Figure 9. for Buck MOSFET+FRED 600V / 75A & 70A PS , FZ06NPA070FP preliminary datasheet flowNPC 0 NPC Application Figure 12. Boost IGBT 600V / 75A & , Application Figure 16. Boost IGBT 600V / 75A & 70A PS* Figure 17. Boost FRED Typical average


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PDF FZ06NPA070FP 00V/75A 60use
2008 - Not Available

Abstract: No abstract text available
Text: Standard Power Integrated Module flow90PACK1 Features: flow90PACK 1 up to 600V / 75A , 1200V/35A x 3 ~ IGBT inverter x Temperature Sensor x Vincotech - power flow through for simple PCB routing x Vincotech - Clip In the reliable interconnection between PCB, module and heatsink x x 600V trench fieldstop 1,2kV trench Fieldstop Dedicated for motor drive applications , selection data: 600V Trench-Fieldstop 600V / 30A 600V / 50A 600V / 75A 1200V Trench-Fieldstop 1200V


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PDF flow90PACK1 flow90PACK 00V/75A, 200V/35A V23990-P704-F V23990-P705-F V23990-P706-F V23990-P708-F V23990-P709-F
2008 - Not Available

Abstract: No abstract text available
Text: V23990-P824-F10-PM preliminary datasheet Output Inverter Application flowPACK 1 3rd gen 600V / 75A General conditions 3phase SPWM VGEon = 15 V VGEoff = -15 V Rgon = 4 Ω Rgoff = 4 Ω IGBT Figure 1 Typical average static loss as a function of output current Ploss = f(Iout) 140 , output current as a function Mi*cosfi 600V / 75A Phase Figure 6 Typical available 50Hz output , Pout (kW) 600V / 75A 30,0 25,0 100,0 99,0 2kHz 98,0 2kHz 97,0 20,0 96,0 16kHz 15


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PDF V23990-P824-F10-PM 00V/75A
2008 - Not Available

Abstract: No abstract text available
Text: V23990-P824-F-PM preliminary datasheet Output Inverter Application flowPACK 1 3rd gen 600V / 75A General conditions 3phase SPWM VGEon = 15 V VGEoff = -15 V Rgon = 4 Ω Rgoff = 4 Ω IGBT Figure 1 Typical average static loss as a function of output current Ploss = f(Iout) 140 , function of switching frequency Iout = f(Mi*cosfi) Iout (A) 120 Iout (A) 600V / 75A Th = 60 , Typical available peak output power as a function of Pout=f(Th) heatsink temperature 30,0 600V / 75A


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PDF V23990-P824-F-PM 00V/75A
2010 - 10-FZ06NBA075SA-P916L33

Abstract: No abstract text available
Text: -FZ06NBA030SA-P914L33 Vincotech GmbH Biberger Straße 93 82008 Unterhaching Germany 2x 600V 2x 600V 30A CoolMOSTM + SiC diodes + bypass diode IGBT3 10-FZ06NBA050SA-P915L33 2x 600V 50A IGBT3 10-FZ06NBA075SA-P916L33 2x 600V 75A IGBT3 • 600V devices are used to provide 1200V total voltage capability at


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PDF V23990-P621-F68-PM V23990-P629-F68-PM 10-FZ06NBA075SA-P916L33
2004 - power supply switching

Abstract: EXB841 tlp521 Photocoupler TLP521 IGBT DRIVE 600V 300A Photocoupler EXB840 3 amp IGBT EXB851 EXB850
Text: mounting Type Switching speed ton 2.0s IGBT IGBT drive 1200V 600V 75A 150A 400A 1.5s 1.5s 150A 400A 300A 75A 300A 9 Block diagrams EXB850, EXB851 5 4 6 Overcurrent protection circuit


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PDF EXB850EXB851 10kHz EXB840EXB841 40kHz AC2500V AF90343, EXB850, EXB851) 10kHz EXB840, power supply switching EXB841 tlp521 Photocoupler TLP521 IGBT DRIVE 600V 300A Photocoupler EXB840 3 amp IGBT EXB851 EXB850
94vo

Abstract: TB400 E62622
Text: INDEX Series TB400 Double Row Terminal Blocks SPECIFICATIONS Rating: 75A , 600V * * 75A max. with pressure terminal connector and #4 AWG; 30A max. with #10 AWG; Center Spacing: .687" or 11/16" (17.45 mm) Wire Size: #10-14 AWG CU Screw Size: #10-32 philslot screws Torque Rating: 20 in-lb. Distance Between Barriers: .56" (14.3 mm) Mounting: #10 screws Material: Molded base: Black, UL rated 94VO thermoplastic Terminal plating: Tin over brass; Screws: Zinc plated steel Operating Temperature


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PDF TB400 E62622; LR15364; TB400-05 94vo TB400 E62622
2004 - Not Available

Abstract: No abstract text available
Text: paralleling Chip Type SIGC39T60 VCE ICn 600V 75A This chip is used for: • power module , SIGC39T60 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) â , VCE(sat) VGE=15V, IC = 75A 1.05 1.45 1.85 Gate-emitter threshold voltage VGE(th) IC =1200µA , VGE=VCE tbd 5.8 tbd Zero gate voltage collector current ICES VCE= 600V , ° C V C C = 30 0 V , I C = 75A , V GE= - 1 5 / 1 5 V , tbd R G = t b dΩ tbd values


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PDF SIGC39T60 Q67050A4339-A101 L7571A,
2004 - Not Available

Abstract: No abstract text available
Text: paralleling Chip Type SIGC39T60S VCE ICn 600V 75A This chip is used for: • power module , SIGC39T60S 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) â , =15V, IC = 75A Gate-emitter threshold voltage VGE(th) IC =1200µA , VGE=VCE Zero gate voltage collector current ICES VCE= 600V , VGE=0V 3.8 µA Gate-emitter leakage current IGES VCE , Value min. Tj= 1 7 5 ° C V C C = 40 0 V , I C = 75A , V G E = 0/ 1 5 V , R G = 5Ω values


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PDF SIGC39T60S Q67050A4394-A101 L7571D,
2008 - 600v 75a

Abstract: APT75DL60B
Text: APT75DL60B(G) APT75DL60S(G) 600V 75A *G Denotes RoHS Compliant, Pb Free Terminal Finish , CHARACTERISTICS Max 1.25 1.6 IF = 150A 2.0 IF = 75A , TJ = 125°C Forward Voltage Typ IF = 75A VF Characteristic / Test Conditions Min 1.25 Volts Maximum Reverse Leakage Current CT VR = 600V 25 VR = 600V , TJ = 125°C IRM Unit 250 Junction Capacitance, VR = , °C Max Unit 56 ns 460 IF = 75A , diF/dt = -200A/s VR = 400V, TC = 25°C 2174 11 ns


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PDF APT75DL60B APT75DL60S O-247 Cathode30) 600v 75a
2004 - SIGC40T60R3

Abstract: No abstract text available
Text: Chip Type SIGC40T60R3 VCE ICn 600V 75A This chip is used for: · power module C , SIGC40T60R3 3 IGBT Chip FEATURES: · 600V Trench & Field Stop technology · low VCE(sat) · , Collector-emitter saturation voltage VCE(sat) VGE=15V, IC = 75A 1.05 1.45 1.85 Gate-emitter , current ICES VCE= 600V , VGE=0V 190 µA Gate-emitter leakage current IGES VCE=0V , VGE , . typ. Tj= 1 2 5 ° C V C C = 30 0 V , I C = 75A , V GE= - 1 5 / 1 5 V , tbd R G = t b d


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PDF SIGC40T60R3 Q67050A4347-A101 L7821A, SIGC40T60R3
2004 - L7821A

Abstract: SIGC40T60R3 l7821
Text: Chip Type SIGC40T60R3 VCE ICn 600V 75A This chip is used for: · power module C , SIGC40T60R3 3 IGBT Chip FEATURES: · 600V Trench & Field Stop technology · low VCE(sat) · , 600 Collector-emitter saturation voltage VCE(sat) VGE=15V, IC = 75A 1.05 1.45 1.85 , collector current ICES VCE= 600V , VGE=0V 3.8 µA Gate-emitter leakage current IGES VCE , . Tj= 1 2 5 ° C V C C = 30 0 V , I C = 75A , V GE= - 1 5 / 1 5 V , R G = 1 . 2 values also


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PDF SIGC40T60R3 Q67050A4347-A101 L7821A, L7821A SIGC40T60R3 l7821
2006 - FS75R06KE3

Abstract: L4571M SIDC20D60C6
Text: Chip Type VR IF Die Size Package SIDC20D60C6 600V 75A 5.37 x 3.75 mm2 sawn , SIDC20D60C6 Fast switching diode chip in EMCON 3 -Technology FEATURES: · 600V EMCON 3 technology , Parameter Symbol Conditions Value min. Reverse leakage current IR V R = 600V V Br I , Parameter Peak reverse recovery current Symbol Conditions I F = 75A IRM di/dt=4000A/ µs V R =300V V GE = - 1 5 V I F = 75A Recovered charge Qr di/dt=4000A/ µs V R =300V V GE = - 1 5 V I


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PDF SIDC20D60C6 L4571M, FS75R06KE3 L4571M SIDC20D60C6
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