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Part Manufacturer Description Datasheet Download Buy Part
LT3485EDD-0 Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-3#TRPBF Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-3#TRPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-1#TRMPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-3 Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-0 Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C

600v 30a IGBT Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - 2kw mosfet

Abstract: ECN3053F AC200
Text: 0.036 99 1.0 600V / 30A IGBT GN6030E 0.085 97 3.3 600V / 30A IGBT GN6030E 0.085 327 5.6 600V / 30A IGBT GN6030E 0.085 557 The Cb of 3.3µF having some margin is , . 3-phase 15V Power Supply ECN3053F AC200240V IGBT /MOS Module M <2.2kW 3 , Configuration of a variable-speed control system with 3-phase motors ECN3053F can drive up to 30A IGBTs or , IGBT , a n-channel MOSFET and so on, which can be turned on by a plus gate voltage against the source


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PDF P1/14 IC-SP-96033 ECN3053F AC200230V ECN3053F AC200240V DC311374V) 2kw mosfet AC200
1998 - stepper motor driver full bridge 6A

Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Motor Driver IC L293D Triac 3a 600v L298N IGBT full bridge
Text: , 3A IGBT TO220 600V , 7A IGBT TO220 600V , 20A Fast IGBT+Diode TO247 600V , 30A , IGBT TO-247 Mosfet , . Bridge - 600V /35A;1000V/35A Input Rect. Bridge - 1200V / 30A (3-ph.) Input Rect. Bridge - Thyristor - , STTAx06 600V , 7A Fast IGBT+Diode TO220 600V , 10A, low Vcesat, IGBT 600V , 20A Fast IGBT+Diode TO247 , / Max247 /ISOTOP 600V /900V Turboswitch A Ultrafast Diode 8A 2x300V Hyperfast Diode / Low recovery , ; DIP/SO16 H.V. Level Shifter - 600V , +0.13/-0.32A, DIP/SO8 H.V. Half Bridge Driver - 600V , +0.4


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PDF BTW68/69 BF3506TV /10TV BHA/K3012TV 0-55A 00V/35A 000V/35A L4981A/B STW/Y/ExNA60 STTAxx06 stepper motor driver full bridge 6A mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Motor Driver IC L293D Triac 3a 600v L298N IGBT full bridge
1999 - Not Available

Abstract: No abstract text available
Text: 500V/10A MOS 2SK1516 600V / 30A IGBT GN6030E 600V / 30A IGBT GN6030E 600V / 30A IGBT GN6030E Electric gate , . 3-phase 15V Power Supply ECN3053F IGBT /MOS Module M <2.2kW 3-Phase Induction AC200~240V (10 , variable-speed control system with 3-phase motors ECN3053F can drive up to 30A IGBTs or MOSFETs, and control , device should be a device, like a n-channel IGBT , a n-channel MOSFET and so on, which can be turned on by , charging Cb. Resistance Rb(in Fig. 9(b) should be more than a few ohms. Diode Db needs more than 600V


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PDF P1/14 IC-SP-96033 ECN3053F AC200 DC311
IGBT 500V 35A

Abstract: 600v 30a IGBT what is fast IGBT transistor APT0408 APT5014B2LL IGBT tail time MOSFET 1200v 30a snubber circuit IGBT structure dodge Current tail time of IGBT
Text: Tradeoff: Conduction vs. Switching Loss 600V , 30A IGBT 500V, 35A MOSFET APT30GT60BR APT5014B2LL , frequency ­ Up to about 150 kHz for 600V IGBT , 100kHz for 900V IGBT , 50kHz for 1200V IGBT , hard switched , 600V PT IGBT vs. 500V MOSFETs Size 5 MOSFET 700 600 500 400 300 200 100 0 Same , current Side note 72A, 600V PT IGBT MOSFETs are more efficient at low current Implications , Technology to the Next Power Application Note APT0408 IGBT Technical Overview Distinguishing


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PDF APT0408 IGBT 500V 35A 600v 30a IGBT what is fast IGBT transistor APT0408 APT5014B2LL IGBT tail time MOSFET 1200v 30a snubber circuit IGBT structure dodge Current tail time of IGBT
MM24400E02

Abstract: Power supply for 24V output circuit diagram IM24400E 2N3904 TLP521 mm244
Text: . BY APPROVED BY SCALE X UNIT X TITLE: ENGINEERING SPEC. OF IPM SDIP 600V 30A THIS , SPEC. OF IPM SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD , SPEC. OF IPM SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD , SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD. AND SHALL NOT , . BY APPROVED BY SCALE X UNIT X TITLE: ENGINEERING SPEC. OF IPM SDIP 600V 30A THIS


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PDF IM24400E E204652 MM24400E02 MM24400E02 Power supply for 24V output circuit diagram IM24400E 2N3904 TLP521 mm244
C15-C21

Abstract: fo11
Text: UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE , X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF , ., LTD. BY APPROVED BY SCALE X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A , UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE


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PDF IM14400-1 MM14400106 C15-C21 fo11
MM24400E02

Abstract: IM24400E 2N3904 TLP521
Text: UNIT X TITLE: ENGINEERING SPEC. OF IPM SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE , IPM SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD. AND SHALL , : ENGINEERING SPEC. OF IPM SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD , ., LTD. SCALE X UNIT X TITLE: ENGINEERING SPEC. OF IPM SDIP 600V 30A THIS DRAWINGS AND , : ENGINEERING SPEC. OF IPM SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD


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PDF IM24400E E204652 MM24400E02 MM24400E02 IM24400E 2N3904 TLP521
IM14400

Abstract: 600v 30a diode zener c2 6 MM14400008 2N3904 TLP521 ac drive circuit diagram diode zener ZD 103
Text: SCALE X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF , SCALE X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF


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PDF IM14400 E204652. MM14400008 IM14400 600v 30a diode zener c2 6 MM14400008 2N3904 TLP521 ac drive circuit diagram diode zener ZD 103
IM14400-E

Abstract: MM14400E09 IM14400E 2N3904 TLP521 IM14400
Text: SCALE X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF , SCALE X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF


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PDF IM14400-E E204652. MM14400E09 IM14400-E MM14400E09 IM14400E 2N3904 TLP521 IM14400
b2s2

Abstract: IM14400 24V, 1W Zener Diode ZD24V 2N3904 TLP521 1W ZENER DIODE MM14400008
Text: UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE , ., LTD. SCALE X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND , UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE , UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE , . OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD. AND


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PDF IM14400 MM14400008 b2s2 IM14400 24V, 1W Zener Diode ZD24V 2N3904 TLP521 1W ZENER DIODE MM14400008
1996 - FGW30N120H

Abstract: No abstract text available
Text: , IC = 30A Tj =25°C Tj =175°C Tj =25°C Tj =175°C VCE=25V VGE=0V f=1MHz VCC = 600V IC = 30A VGE = 15V Tj = 25°C VCC = 600V IC = 30A VGE = 15V RG = 10 L = 500H Energy loss include "tail" and FWD (FDRW20S120J) reverse recovery. Tj = 175°C VCC = 600V IC = 30A VGE = 15V RG = 10 L = 500H Energy loss include , .7 Typical Capacitance V =0V,f=1MHz,T =25°C GE j Graph.8 Typical Gate Charge V = 600V ,I = 30A ,T =25°C CC C , =500µH V =15V,R =10 C j CC GE G Graph.10 Typical switching time vs. R T =175°C,V = 600V ,I = 30A ,L=500µH V


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PDF FGW30N120H FGW30N120H
2009 - FGA30N120

Abstract: FGA30N120FTD fgh30n120 IGBT 1200V 60A HIGH VOLTAGE DIODE for microwave ovens FGH30N120FTD FGA30N120FTDTU FGH30N120FT igbt 30A igbt 600V 30A
Text: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description · Field stop , Turn-Off Switching Loss Ets Total Switching Loss VCC = 600V , IC = 30A , RG = 10, VGE = 15V , Qgc Gate to Collector Charge FGH30N120FTD Rev. A VCC = 600V , IC = 30A , RG = 10, VGE = 15V, Resistive Load, TC = 125oC VCE = 600V , IC = 30A , VGE = 15V 2 www.fairchildsemi.com FGA30N120FTD 1200V, 30A Trench IGBT Package Marking and Ordering Information Symbol Parameter TC = 25


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PDF FGA30N120FTD FGA30N120FTD FGA30N120 fgh30n120 IGBT 1200V 60A HIGH VOLTAGE DIODE for microwave ovens FGH30N120FTD FGA30N120FTDTU FGH30N120FT igbt 30A igbt 600V 30A
1996 - FGW30N120HD

Abstract: No abstract text available
Text: =25°C Tj =175°C Tj =25°C Tj =175°C VCE=25V VGE=0V f=1MHz VCC = 600V IC = 30A VGE = 15V Tj = 25°C VCC = 600V IC = 30A VGE = 15V RG = 10 L = 500H Energy loss include "tail" and FWD reverse recovery. Tj = 175°C VCC = 600V IC = 30A VGE = 15V RG = 10 L = 500H Energy loss include "tail" and FWD reverse , / Discrete IGBT C Graph.2 Collector Current vs. switching frequency V =+15V, T 175ºC, V = 600V , D=0.5, R , =0V,f=1MHz,T =25°C GE j Graph.8 Typical Gate Charge V = 600V ,I = 30A ,T =25°C CC C j 10 4


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PDF FGW30N120HD FGW30N120HD
2009 - Not Available

Abstract: No abstract text available
Text: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop , www.fairchildsemi.com FGA30N120FTD 1200V, 30A Trench IGBT May 2009 Device Marking Device Package , Turn-Off Switching Loss Ets VCC = 600V , IC = 30A , RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC , Charge FGH30N120FTD Rev. A VCC = 600V , IC = 30A , RG = 10Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 600V , IC = 30A , VGE = 15V 2 www.fairchildsemi.com FGA30N120FTD 1200V, 30A


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PDF FGA30N120FTD FGA30N120FTD
2008 - Not Available

Abstract: No abstract text available
Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop , FGH30N120FTD Rev. A 1 www.fairchildsemi.com FGH30N120FTD 1200V, 30A Trench IGBT November 2008 , - 1.70 - mJ Turn-On Delay Time - 40 - ns VCC = 600V , IC = 30A , RG = 10â , FGH30N120FTD Rev. A VCC = 600V , IC = 30A , RG = 10Ω, VGE = 15V, Resistive Load, TC = 125oC - 364 - ns - 0.74 - mJ VCE = 600V , IC = 30A , VGE = 15V 2 208 - nC -


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PDF FGH30N120FTD FGH30N120FTD
2008 - 600v 30a IGBT

Abstract: FGH30N120FTD FGH30N120FTDTU IGBT 60A 1200V IGBT 200A 1200V application induction heating IGBT 1200V 60A igbt 600V 30A datasheet HIGH VOLTAGE DIODE for microwave ovens igbt for HIGH POWER induction heating diode 1200v 30A
Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description · Field stop , - 1 www.fairchildsemi.com FGH30N120FTD 1200V, 30A Trench IGBT November 2008 Device , Gate to Emitter Charge Qgc Gate to Collector Charge VCC = 600V , IC = 30A , RG = 10, VGE = 15V, Resistive Load, TC = 125oC Total Gate Charge Qge VCC = 600V , IC = 30A , RG = 10, VGE = 15V , 600V , IC = 30A , VGE = 15V 2 208 - nC - 41 - nC - 97 - nC


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PDF FGH30N120FTD 1200ut FGH30N120FTD 600v 30a IGBT FGH30N120FTDTU IGBT 60A 1200V IGBT 200A 1200V application induction heating IGBT 1200V 60A igbt 600V 30A datasheet HIGH VOLTAGE DIODE for microwave ovens igbt for HIGH POWER induction heating diode 1200v 30A
step recovery diode

Abstract: P channel 600v 30a IGBT 10a ultra fast diode EPE99 fast recovery diode 600v 5A 30A, 600v DIODE fast recovery diode 1000v 10A 600v 10A ultra fast recovery diode 30A ultra fast diode Switching Characteristics of Fast Recovery Diodes
Text: showing the IGBT current and voltage waveforms during IGBT turn-on for 1200V/ 30A fast diodes. (Vcc= VR= 600V , current and voltage waveforms during IGBT turn-on for 1200V/ 30A fast diodes. (Vcc= VR= 600V , Ic=IF= 30A , di , freewheeling diode power losses curves during IGBT turn-on for 1200V/ 30A fast diodes. (Vcc= VR= 600V , Ic=IF= 30A , Conventional Diode Figure (11) 30A / 600V Freewheeling diode current and voltage waveforms during IGBT turn-on , ) C-class 30A / 600V diode current and voltage waveforms during IGBT turn-on. (Vcc= VR=550V, Ic=IF= 30A , di


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PDF June-97, May-98, step recovery diode P channel 600v 30a IGBT 10a ultra fast diode EPE99 fast recovery diode 600v 5A 30A, 600v DIODE fast recovery diode 1000v 10A 600v 10A ultra fast recovery diode 30A ultra fast diode Switching Characteristics of Fast Recovery Diodes
EXB841

Abstract: IGBT DRIVE 600V 300A 2mb150 bt 33f igbt 2MB150-060 IGBT 300A 1200V IGBT 600V 200A Igbt 1200v 300a IGBT 1200V .50A
Text: IGBT 600V 10A 15A 30A 50A 75A 100A 150A 1200V 250 8A 150 15A 82 , /EXB851/EXB840/EXB841 600V 10A IGBT 1200V RG Icc 250 5kHz 10kHz 15kHz 15A 8A 30A , n U PS n IGBT 600V IGBT drive 150A EXB850 1200V IGBT drive 400A , EXB850 EXB851 IF 5 V V EXB850 EXB850 IC 150A 600V IGBT 75A 1200V IGBT S IC , 400A 600V IGBT 300A 1200V IGBT 4s IC 10kHZ IC n IGBT lin n IGBT n IGBT


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PDF EXB850/EXB851/EXB840/EXB841 10kHz 40kHz 2500VAC EXB850 EXB851 EXB840 EXB841 EXB841 IGBT DRIVE 600V 300A 2mb150 bt 33f igbt 2MB150-060 IGBT 300A 1200V IGBT 600V 200A Igbt 1200v 300a IGBT 1200V .50A
2011 - Not Available

Abstract: No abstract text available
Text: Charge Gate to Collector Charge V CE = 600V , IC = 30A , V GE = 15V V CC = 600V , IC = 30A , RG = 10W, V GE = 15V, Resistive Load, TC = 175oC V CC = 600V , IC = 30A , RG = 10W, V GE = 15V, Resistive Load, TC = 25oC , Rev. C0 2 www.fairchildsemi.com FGA30S120P 1200V, 30A ShortedAnodeTM IGBT Typical , Characteristics vs. Gate Resistance 10000 Common Emitter VCC = 600V , VGE = 15V IC = 30A tr Switching Time , 600V , VGE = 15V IC = 30A TC = 25 C o 1000 td(on) tf 20 TC = 175 C o 10 20


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PDF FGA30S120P FGA30S120P
2012 - Not Available

Abstract: No abstract text available
Text: Charge VCE = 600V , IC = 30A , VGE = 15V VCC = 600V , IC = 30A , RG = 10, VGE = 15V, Resistive Load, TC = 175oC VCC = 600V , IC = 30A , RG = 10, VGE = 15V, Resistive Load, TC = 25oC 39 360 620 160 1.3 1.22 2.52 , 2 FGA30S120P Rev. C1 www.fairchildsemi.com FGA30S120P 1200V, 30A ShortedAnodeTM IGBT , 10000 Common Emitter VCC = 600V , VGE = 15V IC = 30A tr Switching Time [ns] Switching Time [ns] TC = 25 C TC = 175 C o o td(off) 100 Common Emitter VCC = 600V , VGE = 15V IC = 30A TC = 25


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PDF FGA30S120P FGA30S120P
2008 - tyco igbt module 25A

Abstract: 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
Text: ) V23990-P629-F56-PM1) 3) 600V 600V 600V 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 1200V 30A , ) V23990-P386-A11-PM1) V23990-P387-A11-PM1) Voltage 600V 600V 600V 600V 600V 600V Current* 12A 20A 30A , covers a broad power spectrum, ranging from 5A to 450A at 600V and 1200V. Vincotech Fast Power Modules are available in 2 different standard housings for up to 100A at 600V and 1200V and are suitable for switching frequencies of up to 400kHz at 600V and 50kHz at 1200V. fastPACK 0 H 2nd gen W W


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PDF Vincotech-012-0508 ISO9001 TS16949 tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
2011 - Not Available

Abstract: No abstract text available
Text: Charge Gate to Collector Charge V CE = 600V , IC = 30A , V GE = 15V V CC = 600V , IC = 30A , RG = 10W, V GE = 15V, Resistive Load, TC = 175oC V CC = 600V , IC = 30A , RG = 10W, V GE = 15V, Resistive Load, TC = 25oC , td(off) 100 Common Emitter VCC = 600V , VGE = 15V IC = 30A TC = 25 C o 1000 td(on) tf , Figure 15. Switching Loss VS. Gate Resistance 10 Common Emitter VCC = 600V , VGE = 15V IC = 30A TC = 25 , FGA30S120P Shorted AnodeTM IGBT January 2012 FGA30S120P Shorted AnodeTM IGBT Features ·


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PDF FGA30S120P FGA30S120P
2012 - Not Available

Abstract: No abstract text available
Text: Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V , IC = 30A , VGE = 15V VCC = 600V , IC = 30A , RG = 10, VGE = 15V, Resistive Load, TC = 175oC VCC = 600V , IC = 30A , RG = 10, VGE = 15V , VCC = 600V , VGE = 15V IC = 30A tr Switching Time [ns] Switching Time [ns] TC = 25 C TC = 175 C o o td(off) 100 Common Emitter VCC = 600V , VGE = 15V IC = 30A TC = 25 C TC = 175 C o , 600V , VGE = 15V IC = 30A TC = 25 C TC = 175 C o o Figure 16. Switching Loss VS. Collector Current


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PDF FGH30S130P FGH30S130P
2011 - Not Available

Abstract: No abstract text available
Text: - 1.22 - mJ VCC = 600V , IC = 30A , RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC , to Emitter Charge Qgc Gate to Collector Charge VCC = 600V , IC = 30A , RG = 10Ω, VGE = 15V , - ns - 1.59 - mJ VCE = 600V , IC = 30A , VGE = 15V 2 78 - nC - , Common Emitter VCC = 600V , VGE = 15V IC = 30A tr o Switching Time [ns] Switching Time [ns , FGA30S120P 1200 V, 30 A Shorted-anode IGBT Features General Description • High Speed


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PDF FGA30S120P
2011 - Not Available

Abstract: No abstract text available
Text: Total Switching Loss - 2.52 - mJ VCC = 600V , IC = 30A , RG = 10Ω, VGE = 15V, Resistive , 600V , IC = 30A , RG = 10Ω, VGE = 15V, Resistive Load, TC = 175oC VCE = 600V , IC = 30A , VGE = 15V , Emitter VCC = 600V , VGE = 15V IC = 30A tr o Switching Time [ns] Switching Time [ns] 10 , FGA30S120P 1200 V, 30 A Shorted-anode IGBT Features General Description • High Speed , Collector to Emitter Voltage VGES Ratings o C Thermal Characteristics Symbol RθJC( IGBT


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PDF FGA30S120P
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