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LTC3566EUF#PBF-ES Linear Technology High Efn¼üciency USB Power Manager Plus 1A Buck-Boost Converter
LTC3566EUF#TRPBF-ES Linear Technology High Efn¼üciency USB Power Manager Plus 1A Buck-Boost Converter
LTC3402EMS#TR Linear Technology LTC3402 - 2A, 3MHz Micropower Synchronous Boost Converter; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C
LT3494AEDDB#TRMPBF Linear Technology LT3494 - Micropower Low Noise Boost Converters with Output Disconnect; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C
LTC3402EMS#TRPBF Linear Technology LTC3402 - 2A, 3MHz Micropower Synchronous Boost Converter; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C
LT8410IDC-1#TRPBF Linear Technology LT8410 - Ultralow Power Boost Converter with Output Disconnect; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C

600V 300A igbt dc to dc boost converter Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - Not Available

Abstract: No abstract text available
Text: NPC Application Figure 12. Boost IGBT 600V / 300A Figure 13. Typical average static loss , preliminary datasheet flowNPC2 NPC Application Figure 16. Boost IGBT 600V / 300A Figure 17 , current Pout=f(Th) 600V / 300A per MODULE 1,0 Loss distribution 0,9 Boost IGBT static 0,8 , NPC Application Figure 5. Buck IGBT 600V / 300A Figure 6. Buck FRED Typical average , † parameter: Boost IGBT 150 from in 250 300 Iout (A) 350 °C 0° 12 to steps


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PDF F206NIA300SA-M106F 00V/300A
M57962AL

Abstract: IPM Inverter vla531 VLA500-01R M57962 VLA502 MITSUBISHI ipm MODULES ps PM200CL1A120 IGBT 600V 12A VLA500K-01R
Text: FEATURE -Possible to mount on the IGBT package (2 in 1 package) -Built i th i l t d DC DC converter f , generation IGBT modules 15A 20A 30A 50A 600V 100A 200A 300A 400A M57959AL , series : MITSUBISHI high frequency switching IGBT modules < Up to 30kHz use > VCES IC 600V , 2500Vrms (for 1 minute) Mitsubishi NF,NX,A series IGBT modules VCES = 600V series up to 600A class , isolation voltage is 2500Vrms (for 1 minute) Mitsubishi NF series IGBT modules VCES = 600V series up to


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PDF AC200V AC440V VLA106 VLA31X VLA503 M57962AL IPM Inverter vla531 VLA500-01R M57962 VLA502 MITSUBISHI ipm MODULES ps PM200CL1A120 IGBT 600V 12A VLA500K-01R
Not Available

Abstract: No abstract text available
Text: APTGT300DA120D3G Boost chopper Trench + Field Stop IGBT Power Module VCES = 1200V IC = 300A , Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE=±15V, IC= 300A VCE= 600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 300A RG = 2.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 300A RG = 2.2Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 300A Tj , Current IF Diode Forward Voltage trr Qrr Reverse Recovery Charge IF = 300A VR = 600V di


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PDF APTGT300DA120D3G
Not Available

Abstract: No abstract text available
Text: APTGF300DA120D3G VCES = 1200V IC = 300A @ Tc = 80°C Boost chopper NPT IGBT Power Module 3 , VGE=±15V, IC= 300A VCE= 600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A RG = , 125°C VBus = 600V IC = 300A Tj = 125°C RG = 3.3Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = , Recovery Charge IF = 300A IF = 300A VR = 600V di/dt =4500A/µs Err Reverse Recovery Energy , Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ


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PDF APTGF300DA120D3G
2008 - APTGT300DA120D3G

Abstract: No abstract text available
Text: APTGT300DA120D3G Boost chopper Trench + Field Stop IGBT Power Module 3 VCES = 1200V IC = 300A , = 1MHz VGE=±15V, IC= 300A VCE= 600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 300A RG = 2.2 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 300A RG = 2.2 VGE = ±15V Tj = 125°C VBus = 600V IC = 300A Tj = 125°C RG = 2.2 VGE 15V ; VBus = 900V tp 10µs ; Tj = 125°C Min Typ 21 1 2.8 250 90 , Charge Reverse Recovery Energy IF = 300A VR = 600V IF = 300A VGE = 0V Test Conditions VR=1200V Tj = 25


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PDF APTGT300DA120D3G APTGT300DA120D3G
2008 - 4500a

Abstract: APT0502 igbt 600V 300A
Text: APTGF300DA120D3G VCES = 1200V IC = 300A @ Tc = 80°C Boost chopper NPT IGBT Power Module 3 , VGE=±15V, IC= 300A VCE= 600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A RG = 3.3 , 600V IC = 300A Tj = 125°C RG = 3.3 VGE 15V ; VBus = 900V tp 10µs ; Tj = 125°C Min Test , Recovery Energy Max IF = 300A IF = 300A VR = 600V di/dt =4500A/µs V Tj = 25°C 750 , Operating Area 120 750 VCE = 600V VGE =15V IC = 300A TJ = 125°C 80 600 Eon 60 IC (A


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PDF APTGF300DA120D3G 4500a APT0502 igbt 600V 300A
2006 - APT0502

Abstract: APT0601 APTGT300DA120G igbt 600V 300A
Text: APTGT300DA120G Boost chopper Fast Trench + Field Stop IGBT ® Power Module VBUS VCES = 1200V IC = 300A @ Tc = 80°C Application · AC and DC motor control · Switched Mode Power Supplies · , Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 300A R G = 1.8 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 300A R G = 1.8 VGE = ±15V Tj = 125°C VBus = 600V IC = 300A Tj = 125 , and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case


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PDF APTGT300DA120G APT0502 APT0601 APTGT300DA120G igbt 600V 300A
2001 - 600V 300A igbt dc to dc power supply

Abstract: IGBT DRIVE 600V 300A simple 3 phase INVERTER schematic pwm ac chopper control igbt dc ac inverter circuit igbt three phase h-bridge gate drive ic h-bridge igbt pwm pp300 hbridge igbt PWM signal for IGBT
Text: PP300B060 POW-R-PAK 300A / 600V TM H-Bridge IGBT Assembly Description: TM The Powerex , 300A / 600V TM H-Bridge IGBT Assembly Absolute Maximum Ratings, Tj = 25°C unless otherwise , POW-R-PAK 300A / 600V TM H-Bridge IGBT Assembly Gate Drive Board Interface Signal Definitions Pin , (724) 925-7272 POW-R-PAK 300A / 600V TM H-Bridge IGBT Assembly Performance Curves , POW-R-PAK 300A / 600V TM H-Bridge IGBT Assembly Mechanical Drawing PP300B060(-) -6-


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PDF PP300B060 10kHz PP300B060 600V 300A igbt dc to dc power supply IGBT DRIVE 600V 300A simple 3 phase INVERTER schematic pwm ac chopper control igbt dc ac inverter circuit igbt three phase h-bridge gate drive ic h-bridge igbt pwm pp300 hbridge igbt PWM signal for IGBT
2001 - 600V 300A igbt dc to dc power supply

Abstract: IGBT DRIVE 600V 300A igbt inverter reference schematics half bridge inverter schematic igbt dc to dc converter capacitor charging dc ac inverter circuit igbt pwm schematic inverter igbt bridge switching power supply IGBT 1500 volts IGBT 400 amp
Text: PP300D060 POW-R-PAK 300A / 600V TM Half Bridge IGBT Assembly Description: TM The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converter , chopper, half or , 300A / 600V TM Half Bridge IGBT Assembly Absolute Maximum Ratings, Tj = 25°C unless otherwise , POW-R-PAK 300A / 600V TM Half Bridge IGBT Assembly Gate Drive Board Interface Signal Definitions , 300A / 600V TM Half Bridge IGBT Assembly Performance Curves Effective Output Current vs


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PDF PP300D060 10kHz PP300D060 600V 300A igbt dc to dc power supply IGBT DRIVE 600V 300A igbt inverter reference schematics half bridge inverter schematic igbt dc to dc converter capacitor charging dc ac inverter circuit igbt pwm schematic inverter igbt bridge switching power supply IGBT 1500 volts IGBT 400 amp
2008 - APT0502

Abstract: igbt 600V 300A
Text: Conditions 18.6 1.16 1 VGE= -8V / 15V ; VCE= 600V IC= 300A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 300A RG = 1.5 Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 300A RG = 1.5 VGE = ±15V TJ = 150°C VCE = 600V IC = 300A TJ = 150°C RG = 1.5 VGE 15V ; VBus = 900V tp , Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to , Area 90 Eon 450 IC (A) 60 E (mJ) 600 VCE = 600V VGE =15V IC = 300A TJ = 150


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PDF APTGL325DA120D3G APT0502 igbt 600V 300A
2008 - APT0502

Abstract: No abstract text available
Text: APTGT300DA60D3G Boost chopper Trench + Field Stop IGBT Power Module 3 Q2 1 6 7 2 VCES = 600V IC = 300A @ Tc = 80°C Application · AC and DC motor control · Switched Mode Power , = 300A RG = 2.2 VGE = ±15V Tj = 25°C VBus = 600V Tj = 150°C IC = 300A Tj = 25°C RG = 2.2 Tj , diode ratings and characteristics IF Maximum Reverse Leakage Current VR= 600V DC Forward , IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation


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PDF APTGT300DA60D3G APT0502
2006 - APT0601

Abstract: APTGF300DA120G APT0502
Text: APTGF300DA120G Boost chopper NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application · AC and DC motor control · Switched Mode Power Supplies · Power Factor Correction VBUS , = 600V IC = 300A R G = 3 Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 300A R G = 3 VGE = 15V Tj = 125°C VBus = 600V IC = 300A Tj = 125°C R G = 3 Fall Time Td(on) Min , Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to


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PDF APTGF300DA120G APT0601 APTGF300DA120G APT0502
Not Available

Abstract: No abstract text available
Text: APTGF300DA120G Boost chopper NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80 , Switching (25°C) VGE = 15V VBus = 600V IC = 300A R G = 3Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 300A R G = 3Ω VGE = 15V Tj = 125°C VBus = 600V IC = 300A Tj = 125°C R G = , Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS , Thermal Impedance, Junction to Case vs Pulse Duration 0.07 0.9 IGBT 0.06 0.04 0.5 0.03


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PDF APTGF300DA120G
Not Available

Abstract: No abstract text available
Text: APTGF300DA120D3G VCES = 1200V IC = 300A @ Tc = 80°C Boost chopper NPT IGBT Power Module 3 , 25V f = 1MHz VGE=±15V, IC= 300A VCE= 600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC , — VGE = ±15V Tj = 125°C VBus = 600V IC = 300A Tj = 125°C RG = 3.3 VGE ≤15V ; VBus = 900V , =1200V Reverse Recovery Time Qrr Max 1200 DC Forward Current VF Typ IF = 300A IF = 300A , characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance


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PDF APTGF300DA120D3G
Not Available

Abstract: No abstract text available
Text: PP300T060 POW-R-PAK 300A / 600V TM 3 phase IGBT Assembly Description: TM The Powerex , 300A / 600V TM 3 phase IGBT Assembly Absolute Maximum Ratings, Tj = 25°C unless otherwise , POW-R-PAK 300A / 600V TM 3 phase IGBT Assembly Gate Drive Board Interface Signal Definitions Pin , , Youngwood, Pennsylvania 15697-1800 (724) 925-7272 POW-R-PAK 300A / 600V TM 3 phase IGBT Assembly , 15697-1800 (724) 925-7272 PP300T060 POW-R-PAK 300A / 600V TM 3 phase IGBT Assembly Mechanical


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PDF PP300T060 10kHz PP300T060
2004 - APTGF300DA120

Abstract: No abstract text available
Text: APTGF300DA120 Boost chopper NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80 , ) Switching Energy losses (mJ) VCE = 600V VGE=±15V IC= 300A TJ = 125°C 20 DC Collector Current vs , Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to , °C) VGE = 15V VBus = 600V IC = 300A RG = 2 50% duty cycle Max 0.4 25 3.3 4 Min Test , Temperature To heatsink Mounting torque For terminals Package Weight Min IGBT Diode Typ Max


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PDF APTGF300DA120 isola0001 APTGF300DA120
2001 - full bridge 3-phase inverter pwm

Abstract: IGBT 600V 16 igbt inverter reference schematics Full-bridge inverter IGBT DRIVE 600V 300A simple inverter overcurrent inverter protection schematics phase monitor fault SWITCHING VOLTAGE FOR A 300A IGBT MODULE PP300T060
Text: PP300T060 POW-R-PAK 300A / 600V TM 3 phase IGBT Assembly Description: TM The Powerex , 300A / 600V TM 3 phase IGBT Assembly Absolute Maximum Ratings, Tj = 25°C unless otherwise , POW-R-PAK 300A / 600V TM 3 phase IGBT Assembly Gate Drive Board Interface Signal Definitions Pin , , Pennsylvania 15697-1800 (724) 925-7272 POW-R-PAK 300A / 600V TM 3 phase IGBT Assembly Performance , ) 925-7272 PP300T060 POW-R-PAK 300A / 600V TM 3 phase IGBT Assembly Mechanical Drawing


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PDF PP300T060 10kHz PP300T060 full bridge 3-phase inverter pwm IGBT 600V 16 igbt inverter reference schematics Full-bridge inverter IGBT DRIVE 600V 300A simple inverter overcurrent inverter protection schematics phase monitor fault SWITCHING VOLTAGE FOR A 300A IGBT MODULE
2004 - APTGT300DA120D3

Abstract: No abstract text available
Text: APTGT300DA120D3 Boost chopper VCES = 1200V IC = 300A @ Tc = 80°C ® Trench IGBT Power Module Application · AC and DC motor control · Switched Mode Power Supplies · Power Factor , Switching (25°C) VGE = ±15V VBus = 600V IC = 300A RG = 2.2 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 300A RG = 2.2 Test Conditions IF = 300A VGE = 0V IF = 300A VR = 600V di/dt =900A/µs IF = 300A VR = 600V di/dt =900A/µs TJ TSTG TC Torque Wt Junction to Case RMS


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PDF APTGT300DA120D3 APTGT300DA120D3
2005 - Not Available

Abstract: No abstract text available
Text: APTGT300DA120 Boost chopper Fast Trench + Field Stop IGBT ® Power Module VCES = 1200V IC = 300A @ , f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 300A R G = 1.8 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 300A R G = 1.8 Min Typ 21 1.2 0.9 260 30 420 70 290 50 520 90 , VGE = 0V IF = 300A VR = 600V di/dt =3000A/µs 300 1.6 1.6 170 280 27 54 2.1 V ns µC May , torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.09


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PDF APTGT300DA120
2006 - APT0502

Abstract: APT0601 APTGT300DA60G
Text: APTGT300DA60G Boost chopper Trench + Field Stop IGBT ® Power Module VCES = 600V IC = 300A @ Tc = 80°C Application · AC and DC motor control · Switched Mode Power Supplies · Power Factor Correction VBUS CR1 Features · Trench + Field Stop IGBT ® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low , Maximum Reverse Leakage Current Test Conditions VR= 600V DC Forward Current VF Diode Forward


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PDF APTGT300DA60G APT0502 APT0601 APTGT300DA60G
mosfet 1200V 40A

Abstract: mosfet 1200V 1200v mosfet powerex power Modules fuji semiconductor catalog
Text: converter Boost converter IGBT Device Ratings: · · Voltage - 600V or 1200V Current - up to 200A MOSFET Device Ratings: · · Voltage-60V to 1200V Current - up to 300A at 60V; up to 40A at 1200V Power Device , SENSITRON SEMICONDUCTOR 1998 · SHORT FORM CATALOG - Revision INDUSTRIAL IGBT / MOSFET POWER , second sourcing most of Fuji® and or Powerex® power modules Sensitron is able to replace any obsolete industrial power module Sensitron is competitive in customizing power modules to the customers' needs


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Not Available

Abstract: No abstract text available
Text: / 15V ; VCE= 600V IC= 300A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 300A RG = 1.5 Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 300A RG = 1.5 VGE = ±15V TJ = 150°C VCE = 600V IC = 300A TJ = 150°C RG = 1.5 VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150 , Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to , Area 90 Eon 450 IC (A) 60 E (mJ) 600 VCE = 600V VGE =15V IC = 300A TJ = 150Â


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PDF APTGL325DA120D3G
Not Available

Abstract: No abstract text available
Text: 1200V IC = 300A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power , = 600V IC = 300A R G = 1.8Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 300A R G = 1.8Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 300A Tj = 125°C R G = 1.8Ω Fall , Reverse Recovery Energy IF = 300A VGE = 0V IF = 300A VR = 600V di/dt =3000A/µs , Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ


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PDF APTGT300DA120G
2008 - APTGF250DA60D3G

Abstract: APT0502
Text: APTGF250DA60D3G VCES = 600V IC = 250A @ Tc = 80°C Boost chopper NPT IGBT Power Module 3 Q2 1 6 7 2 Application · AC and DC motor control · Switched Mode Power Supplies · , Leakage Current VR= 600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery , IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation , , Junction to Pulse Duration IGBT 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 September


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PDF APTGF250DA60D3G APTGF250DA60D3G APT0502
Not Available

Abstract: No abstract text available
Text: APTGF250DA60D3G VCES = 600V IC = 250A @ Tc = 80°C Boost chopper NPT IGBT Power Module 3 Q2 1 6 7 2 Application • AC and DC motor control • Switched Mode Power Supplies â , characteristics IF Maximum Reverse Leakage Current VR= 600V DC Forward Current VF Diode Forward , package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal , ) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration IGBT 0.9 0.08 0.7


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PDF APTGF250DA60D3G
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