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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358CDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C
LTC4358CDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C
LTC4364CDE-1#TRPBF Linear Technology LTC4364 - Surge Stopper with Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C
LTC4364CS-2#TRPBF Linear Technology LTC4364 - Surge Stopper with Ideal Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C

6 pin diode n10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - fah 37 reverse protection diode

Abstract: NSSM038A LDS8160 6 pin diode n10 NSSM038AT NSMM038AT-E MO-220 NSSW020BT-P1 NSSM038AT-E ADC 7815
Text: notice 11 Doc. No. 8160_DS, Rev. N1.0 LDS8160 PIN DESCRIPTION Pin # 1 2 3 4 6 8 9 10 , Code 00h = 0% Duty Cycle, FFh = 100% Duty Cycle 6 Doc. No. 8160_DS, Rev. N1.0 LDS8160 , . Characteristics subject to change without notice 9 Doc. No. 8160_DS, Rev. N1.0 LDS8160 Table 6 : Offset , LDS8160 Dual-Output RGB / 6 -Channel WLED Driver with LED-SenseTM Temperature & Color Compensation , interface; additional address pin allows 4 unique slave addresses. Power efficiency up to 98%; average


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PDF LDS8160 12-bit fah 37 reverse protection diode NSSM038A LDS8160 6 pin diode n10 NSSM038AT NSMM038AT-E MO-220 NSSW020BT-P1 NSSM038AT-E ADC 7815
2009 - fah 37 reverse protection diode

Abstract: NSSM038A c00102 NSSM038AT NSSM038AT-E ADC 7815
Text: © 2009 IXYS Corp. Characteristics subject to change without notice 6 Doc. No. 8160_DS, Rev. N1.0 , subject to change without notice 9 Doc. No. 8160_DS, Rev. N1.0 LDS8160 Table 6 : Offset Codes , . Characteristics subject to change without notice 11 Doc. No. 8160_DS, Rev. N1.0 LDS8160 PIN DESCRIPTION Pin # 1 2 3 4 6 8 9 10 11 12 13 14 15 5, 7, 16 PAD Name SCLK SDAT SADD GND EN LEDC2 LEDC1 LEDB2 LEDB1 , ) Volts Doc. No. 8160_DS, Rev. N1.0 LDS8160 PACKAGE DRAWING AND DIMENSIONS 16- PIN TQFN (HV3), 3mm


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PDF LDS8160 12-bit fah 37 reverse protection diode NSSM038A c00102 NSSM038AT NSSM038AT-E ADC 7815
2009 - bd 8161

Abstract: ba 9319 LDS8160 100C 2N3904 6 pin diode n10 sad LEDA LDS8141
Text: /61_DS, Rev. N1.0 LDS8161/41 A0h Silicon diode dV F/dT [7:0] 8 A2h LED dV F/dT [7:0 , Silicon diode series resistance offset Factory recommended loaded value = 04h = ~ 68 ohms - 6 Formula , 9 Doc. No. 8141/61_DS, Rev. N1.0 LDS8161/41 PIN DESCRIPTION Function 2 I C Serial clock , to GND on the PCB NC PAD Pin # 8161 8141 1 1 2 2 3 3 4 4 6 6 8 9 10 10 11 11 , LDS8161/41 6 -Channel / 4-Channel High-Side Linear WLED Driver with LED Temperature Compensation


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PDF LDS8161/41 bd 8161 ba 9319 LDS8160 100C 2N3904 6 pin diode n10 sad LEDA LDS8141
2009 - si 9753 8 pin for led driver

Abstract: LDS8141
Text: offset for the Si diode . Typically should set both offsets to be equal. See Table 5 & 6 Defines T-code , WLED de-rating. De-Rating starts at 55ºC junction. 6 Doc. No. 8141/61_DS, Rev. N1.0 LDS8161 , to change without notice 9 Doc. No. 8141/61_DS, Rev. N1.0 LDS8161/41 PIN DESCRIPTION , without notice 16 Doc. No. 8141/61_DS, Rev. N1.0 LDS8161/41 PACKAGE DRAWING AND DIMENSIONS 16- PIN , LDS8161/41 6 -Channel / 4-Channel High-Side Linear WLED Driver with LED Temperature Compensation


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PDF LDS8161/41 si 9753 8 pin for led driver LDS8141
2009 - Not Available

Abstract: No abstract text available
Text: notice 11 Doc. No. 8160_DS, Rev. N1.0 LDS8160 PIN DESCRIPTION Pin # 1 2 3 4 6 8 9 10 , 100% Duty Cycle 6 Doc. No. 8160_DS, Rev. N1.0 LDS8160 ADDRESS DESCRIPTION BITS 19h , . Characteristics subject to change without notice 9 Doc. No. 8160_DS, Rev. N1.0 LDS8160 Table 6 : Offset , . N1.0 LDS8160 PACKAGE DRAWING AND DIMENSIONS 16- PIN TQFN (HV3), 3mm x 3mm, 0.5mm PITCH SYMBOL , LDS8160 Dual-Output RGB / 6 -Channel WLED Driver with LED-SenseTM Temperature & Color Compensation


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PDF LDS8160
2009 - Luxeon 3w rgb led circuit diagram

Abstract: Bd 8694 pin configuration BD 9280 diode ed 92-02 Luxeon LDS 10000 Luxeon 3w LED lumen luxeon led 3w 2N3904 Bd 8694 BD 9617
Text: the LEDs 6 Doc. No. 9003/9001_DS, Rev. N1.0 LDS9003 / 9001 ADDRESS DESCRIPTION BITS , for the Si diode . Typically should set both offsets to be equal. See Table 5 & 6 Defines T-code, at , * Bit 0 Si Diode Offset 0 0* *) Value by default Table 6 : Offset Codes for Tj-Ta Temperature , notice 10 Doc. No. 9003/9001_DS, Rev. N1.0 LDS9003 / 9001 PIN DESCRIPTION Pin # 1 2 3 4 , the lower more lumen Doc. No. 9003/9001_DS, Rev. N1.0 LDS9003 / 9001 TM Figure 6


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PDF LDS9003 LDS9001 LDS9003; LDS9001) Luxeon 3w rgb led circuit diagram Bd 8694 pin configuration BD 9280 diode ed 92-02 Luxeon LDS 10000 Luxeon 3w LED lumen luxeon led 3w 2N3904 Bd 8694 BD 9617
mss60.341

Abstract: n10 diode N092 SCHOTTKY DIODE BRIDGE dr 25 diode MSS25 PCR46 Diode DR 25 mss60 df diode
Text: Spice Models for Metelics Schottky Diodes 1 of 6 The standard diode model found in Spice (Ver , Model Parameters for MSS25,000 Series Diodes 2 of 6 Parameters for diode DF Part Number IS , ,000 Series Diodes 3 of 6 Parameters for diode DF Part Number IS RS ohms CJO pF , Model Parameters for MSS40,000 Series Diodes 4 of 6 Parameters for diode DF Part Number IS , MSS60,148 Ver 1.3 06/24/2009 Schottky Diode Configurations Single Crossover Ring 6 of 6


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PDF PCR46 MSS60 PCR53 0E-12 SMST3012 MSS30 SMST4012 MSS40 SMST6012 mss60.341 n10 diode N092 SCHOTTKY DIODE BRIDGE dr 25 diode MSS25 PCR46 Diode DR 25 df diode
2007 - 60V N-Channel Logic level QFET

Abstract: fds6612 FDS6612A 6 pin diode n10
Text: D D DD D D 5 6 Pin 1 SO-8 Absolute Maximum Ratings Symbol 3 7 2 8 G , Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6612A Rev D1 , =0.05 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=42 RS=.1) .MODEL MMEDMOD NMOS (VTO=2.1 KP= 6 IS=1E-30 N=10 TOX=1 L , VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 7 14 ns 5 10 ns td(off) Turn­Off Delay Time 22 35 ns tf Turn­Off Fall Time 3 6 ns 5.4 7.6 nC Qg


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PDF FDS6612A 60V N-Channel Logic level QFET fds6612 FDS6612A 6 pin diode n10
2007 - Not Available

Abstract: No abstract text available
Text: handling capability DD D D 5 6 Pin 1 SO-8 Absolute Maximum Ratings 3 2 8 G S G S , 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6 . Body Diode Forward Voltage , (VTO=2.1 KP= 6 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=4.2) .MODEL MSTROMOD NMOS (VTO=2.55 KP=50 IS=1E-30 N=10 , , VGS = 10 V, ID = 1 A, RGEN = 6 Ω 7 14 ns 5 10 ns td(off) Turn–Off Delay Time 22 35 ns tf Turn–Off Fall Time 3 6 ns Qg Total Gate Charge


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PDF FDS6612A
2003 - 6 pin diode n10

Abstract: FDS6612A 083E-3 n10 diode TH87 N084
Text: 5 6 G S G S S S S S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol Drain , Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6612A Rev D (W , =.1) .MODEL MMEDMOD NMOS (VTO=2.1 KP= 6 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=4.2) .MODEL MSTROMOD NMOS (VTO , = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 7 14 ns 5 10 ns 22 35 ns 3 VDS = 15 V, VGS = 5 V ID = 8.4 A, 6 ns 5.4 7.6 nC 1.7 nC 1.9 nC


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PDF FDS6612A 6 pin diode n10 FDS6612A 083E-3 n10 diode TH87 N084
2007 - hioki 8830

Abstract: LSS-712B IEC60255 koike relays koike relay GP035 PST300 26049 3-1419153-5
Text: pcs 24 22 20 18 16 14 12 10 8 6 4 2 0 5.6 6 6.4 6.8 7.2 7.6 8 8.4 , 2. Data pcs 16 14 12 10 8 6 4 2 0 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 , (without diode ) 1-3. 1-3. Ambient temperature 1-4. ; Standard atmospheric conditions , 5 6 7 8 9 10 11 Average Stdev 3. Result The specifications of contact resistance which is max 100 milliohm can be guaranteed. Rev. A 6 of 30


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PDF S-2602826049 PCFN-112D2M PCFN-112D2M 100Mohm DC500V AC1200V AC4800V FK00-0099-04 FK00-0067-04 hioki 8830 LSS-712B IEC60255 koike relays koike relay GP035 PST300 26049 3-1419153-5
2013 - triac mw 131 600d

Abstract: 65n06
Text: 0.68 20 0.19 N10 ,N11 NKSD400100(R)(I) 100 400(200x2) 3300 0.84 6 0.19 N10 ,N11 NKSD400150(R)(I) 150 400(200x2) 3300 1.10 6 0.19 N10 ,N11 NST30S015 , Compliant to RoHS Printed in Taiwan,Taipei Contents Power Modules Diode Modules 2 Thyristor Modules 3 Schottky Diode Modules 4 Fast Diode Modules 5 Three Phase Diode /Thyristors Modules 6 IGBT Modules 7 Bridge Modules 8 Plastic Discrete Products


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2003 - pspice high frequency mosfet

Abstract: pspice self-heating model list transistor Power MOSFET, Fairchild pspice model list transistor Discrete PSPICE: Diode Models PCIM 177 pspice model list FDP038AN06A0 AN-7510 TRANSISTOR S1A 64
Text: saturation curve 3. The body diode forward conduction 4. Breakdown voltage 5. Trr 6 . Capacitance (Crss , )/(1e + 6 *300),10)} 4.3 Body Diode Forward Voltage Match diode curve data at low currents by , intrinsic body diode . Introduced self-heating modeling concepts are non-proprietary and may be adapted to , RTHERM1 CTHERM1 RLDRAIN 10 G_RSLC1 RSLC2 + - 6 8 5 51 DBREAK ESLC DBODY 11 , CTHERM3 EBREAK 16 - EVTHRES 21 MWEAK MMED 6 104 RTHERM4 CTHERM4 G_RDBODY


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2003 - Dell Latitude csx

Abstract: pspice model list transistor pspice self-heating model list transistor PCIM 177 ronan pspice model list FDB038AN08A0 AN-7510 FDP038AN08A0 FDP038AN06A0
Text: curve 2. The saturation curve 3. The body diode forward conduction 4. Breakdown voltage 5. Trr 6 , intrinsic body diode . Introduced self-heating modeling concepts are non-proprietary and may be adapted to , + - 6 8 DBREAK ESLC DBODY 11 106 RTHERM2 CTHERM2 30 - 50 EDBODY , RGATE MMED 6 104 RTHERM4 CTHERM4 G_RDBODY G_RDBREAK - 20 + 9 31 MWEAK , 8 14 13 102 RTHERM6 CTHERM6 15 CB CA EGS + 6 - 8 13 G_PDISS 14 +


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mbm150gr12

Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 mbm200js12ew m8nd MBM800E17D mbn1200e25c igbt
Text: - - 0.6 N-10 N W Diode MDM800H45E2 4,500 800 2.9 - - - tbd , 300 4.5 - - 1.0 N-10 N D Diode Ref.No.KS10004 3 Status List , . MBN1200E17D 1,700 1,200 2.7 1.9 1.8 3.4 0.7 N-10 N M MBN1600E17D 1,700 1,600 2.7 1.9 2.4 3.8 0.4 N-10 N M MBN1800E17D 1,700 1,800 2.7 , -9 N M MBN2400ES17D 1,700 2,400 2.7 2.1 2.8 3.6 0.6 N-10 N W


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PDF MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 mbm200js12ew m8nd MBM800E17D mbn1200e25c igbt
2001 - FDS2572

Abstract: MS-012AA m067
Text: n10 n6 n8 = 1 spe.evthres n6 n21 n19 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 ISCL RDRAIN 6 , (TOT) = 29nC (Typ.), VGS = 10V · Low QRR Body Diode · Maximized efficiency at high frequencies · UIS , /Full-Bridge 24-volt Forward and Push-Pull topologies D D D D DD D D Pin 1 SO-8 G S G S S S S S 4 6 SO-8 5 3 7 2 8 1 MOSFET Maximum Ratings TA=25°C unless , 6 nC - 8 - nC - 6 - nC - 4 - nC Dynamic Characteristics


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PDF FDS2572 48-volt 24-volt FDS2572 MS-012AA m067
2002 - FDB035AN06A0

Abstract: NL104
Text: ( Typ.) @ V GS = 10 V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse and , ns ns ns Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse , Application Notes AN7514 and AN7515 Figure 6 . Unclamped Inductive Switching Capability 160 VGS = 20V VGS = , VGS , GATE TO SOURCE VOLTAGE (V) 6 0 0.5 1.0 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7 , 8 CISS = CGS + CGD C, CAPACITANCE (pF) COSS C DS + C GD 6 1000 CRSS = CGD 4


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PDF FDB035AN06A0 FDB035AN06A0 O-263) 153oC, NL104
2002 - FDP3682

Abstract: kp32 tube
Text: 18.5 nC( Typ.) @ V GS = 10 V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse , ) Power dissipation Derate above 25oC Operating and Storage Temperature 32 23 6 Figure 4 55 95 0.63 -55 to , VGS = 10V, RGS = 16 9 46 26 32 83 87 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 32A ISD = 16A , Fairchild Application Notes AN7514 and AN7515 Figure 6 . Unclamped Inductive Switching Capability 80


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PDF FDB3682 FDP3682 FDP3682 O-263) O-220 kp32 tube
2001 - FDS3672

Abstract: No abstract text available
Text: ) = 28nC (Typ.), VGS = 10V · Low QRR Body Diode · Maximized efficiency at high frequencies · UIS Rated , Half-Bridge/Full-Bridge 24-volt Forward and Push-Pull topologies D D SO-8 D D DD D D 5 6 4 3 2 1 Pin 1 SO-8 G G S S S S S S 7 8 MOSFET Maximum Ratings TA=25°C unless otherwise noted , 28 4 10 6.8 6 37 6 pF pF pF nC nC nC nC nC Resistive Switching Characteristics tON td(ON) tr td , = 50V, ID = 4A VGS = 10V, RG = 10 14 20 37 27 51 96 ns ns ns ns ns ns Drain-Source Diode


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PDF FDS3672 48-volt 24-volt FDS3672
2003 - mosfet SPICE MODEL

Abstract: self-heating subckt pspice high frequency mosfet parallel mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods difference between orcad pspice ronan FDP038AN08A0 MOSFET S1A PSPICE Orcad
Text: to model the temperature characteristics of the intrinsic body diode . Introduced self-heating , voltage - drain-to-source breakdown voltage - intrinsic body diode voltage - capacitance versus , +5 6 8 - ESLC 51 50 DBREAK + ESG RLDRAIN RSLC1 10 DBODY 11 RDRAIN + 17 EBREAK 16 EVTEMP RGATE 18 - MW EAK MMED 6 20 - 21 - , 15 RVTEMP 19 IT CB 13 CA EGS + 6 - 8 + EDS - 14 5 8 VBAT


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2008 - Not Available

Abstract: No abstract text available
Text: n10 n6 n8 = 1 spe.evthres n6 n21 n19 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 ISCL RDRAIN 6 8 , S1 D1 TSSOP-8 G1 Pin 1 ©2008 Fairchild Semiconductor Corporation FDW2511NZ Rev. A1 , tOFF Turn-Off Time - - 144 ns Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 1.3A - 0.7 1.2 V trr Reverse Recovery Time ISD = 7.1A , The diode connected to the gate and source serves only as protection against ESD. No gate overvoltage


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PDF FDW2511NZ FDW2511NZ
2008 - 2511NZ

Abstract: m068 BV150 FDW2511NZ n10 diode 51E3 KP17 Diode N7 S2
Text: TSSOP-8 FDW2511NZ Rev. A1 G1 Pin 1 ©2008 Fairchild Semiconductor Corporation D2 G2 , Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 1.3A - 0.7 1.2 V , a mininum copper pad on FR-4. 3 The diode connected to the gate and source serves only as , 1.0 0.8 0.6 0.4 6 VGS = 4.5V 4 VGS = 2.5V 2 0.2 0 0 0 25 50 75 , Operating Area 2.0 2.5 Figure 6 . Transfer Characteristics 40 40 VGS = 10V PULSE DURATION =


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PDF FDW2511NZ FDW2511NZ 2511NZ m068 BV150 n10 diode 51E3 KP17 Diode N7 S2
2002 - tc143e

Abstract: 25E5 tube FDB2552 m062 MOTOR tc2-16 marking m062
Text: =3.0e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=5.7e-10 IS=1.0e-30 N=10 M=0.58) .MODEL MmedMOD NMOS (VTO=3.5 KP= 6 , 39 nC ( Typ.) @ V GS = 10 V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse , ns ns ns Drain-Source Diode Characteristics V SD trr QRR Source to Drain Diode Voltage Reverse , AN7515 Figure 6 . Unclamped Inductive Switching Capability 80 VGS = 10V ID, DRAIN CURRENT (A) 60 VGS = , Voltage vs Junction Temperature 10 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 75V 8 6 CRSS = CGD 4


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PDF FDB2552 FDP2552 FDP2552 O-263) O-220 tc143e 25E5 tube m062 MOTOR tc2-16 marking m062
2002 - FDP2532 Mosfet

Abstract: FDP2532 FDB2532 FDB2532/FDP2532/FDI2532
Text: , ID = 33 A · QG(tot) = 82 nC ( Typ.) @ V GS = 10 V · Low Miller Charge · Low Qrr Body Diode · UIS , Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse , : Refer to Fairchild Application Notes AN7515 and AN7517 Figure 6 . Unclamped Inductive Switching , VOLTAGE (V) CISS = CGS + CGD C, CAPACITANCE (pF) COSS CDS + CGD 1000 CRSS = CGD 8 6 4 , Fairchild Semiconductor Corporation FDB2532 / FDP2532 / FDI2532 Rev. C1 6 www.fairchildsemi.com


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PDF FDB2532 FDP2532 FDI2532 FDI2532 O-263) O-220 O-262) FDP2532 Mosfet FDB2532/FDP2532/FDI2532
2001 - Not Available

Abstract: No abstract text available
Text: 4 6 3 7 2 8 1 D D D D SO-8 Pin 1 SO-8 G S G S S S S S MOSFET , Applications • • • • • Qg(TOT) = 29nC (Typ.), VGS = 10V • Low QRR Body Diode • Maximized , 48 - pF - 29 38 nC - 4 6 nC - 8 - nC - 6 - nC , Drain-Source Diode Characteristics ISD = 4.9A - - 1.25 V ISD = 3.1A - - 1.0 V , ISD = 4.9, dISD/dt =100A/µs - - 158 nC VSD Source to Drain Diode Voltage trr


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PDF FDS2572 48-volt 24-volt
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