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5SMY 12M3300 Datasheets Context Search

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2011 - abb traction motor

Abstract:
Text: * 5SMX 76L1280 * 5SMX 86L1280 * 5SMY 76H1280 * 5SMY 86H1280 * 5SMY 76J1280 * 5SMY 86J1280 * 5SMY 76K1280 * 5SMY 86K1280 * 5SMY 76M1280 * 5SMY 86M1280 * 1.7 kV 5SMX 76K1701 5SMX 86K1701 5SMX 76M1701 5SMX 86M1701 5SMY 12M1721 * 2.5 kV 5SMX 12L2510 5SMX 12L2511 3.3 kV 5SMX 12M3300 5SMY 12M3300 4.5 kV 5SMY 12L4500 5SMY 12M4500 5SMY 12N4500 6.5 kV 5SMX 12M6500 5SMY 12M6500 * TVJ (operational) up to 150°C Type , 12M3301 5SLY 12M3300 4.5 kV 5SLY 12L4500 5SLY 12N4500 6.5 kV 5SLX 12M6500 * TVJ (operational) up to 150


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PDF CH-5600 1768/138a 29palms abb traction motor 5SMY 12M4500 IGBT 6500 V diode 6.5 kv ABB IGBT 86M1280 76M12 76J1280 76E-12 5SMY86J1280
2012 - Not Available

Abstract:
Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA , change specifications without notice. 5SMY 12H1280 IGBT characteristic values Parameter Collector , change specifications without notice. Doc. No. 5SYA 1320-02 Dez 12 page 2 of 6 5SMY 12H1280 , 1320-02 Dez 12 1.14±0.05 7.56 page 3 of 6 5SMY 12H1280 114 114 VCE = 20 V 85.5 25 °C , 4 of 6 5SMY 12H1280 20 10 VCC = 600 V 15 VCC = 900 V VGE [V] Cies VGE = 0 V fOSC


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PDF 12H1280 CH-5600
2014 - 5SMY 86M1730

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1695-03 04 14 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra , Collector-emitter saturation voltage is given at chip level 2 5SMY 12M1730 | 5SYA 1695-03 04 14 ns 580 , collector-emitter voltage 3 5SMY 12M1730 | 5SYA 1695-03 04 14 30 35 0.0 Fig. 4 0.2 0.4 0.6 , 500 1000 VCE in V Safe operating area diode (SOA) 4 5SMY 12M1730 | 5SYA 1695-03 04 14 , number Sawn 6" wafer die (on blue tape) 5SMY 86M1730 5SMY 12M1730 | 5SYA 1695-03 04 14


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PDF 12M1730 CH-5600 5SMY 86M1730 ac130
2014 - Not Available

Abstract:
Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No , min µs 175 -40 150 °C 5SMY 12H1280 IGBT characteristic values 2) Parameter , of 6 5SMY 12H1280 Mechanical properties Parameter Unit Overall die L x W mm exposed , Description Part number Unsawn 6" wafer die 5SMY 76H1280 Sawn 6" wafer die (on blue tape) 5SMY , change specifications without notice. Doc. No. 5SYA 1320-03 04 14 page 3 of 6 5SMY 12H1280 114


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PDF 12H1280 CH-5600
2012 - 12M1280

Abstract:
Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No , the right to change specifications without notice. 5SMY 12M1280 IGBT characteristic values , Dez 12 page 2 of 6 5SMY 12M1280 Mechanical properties Parameter Overall die L x W , 5SMY 12M1280 300 300 275 VCE = 20 V 250 25 °C 125 °C IC [A] 250 225 200 200 175 IC , 1322-02 Dez 12 page 4 of 6 5SMY 12M1280 20 100 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 900


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PDF 12M1280 CH-5600 12M1280 5SMY12M1280
2014 - Not Available

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1323-03 04 14 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra , IEC 60747 – 9 2 5SMY 12K1721 | Doc. No: 5SYA 1323-03 04 14 tr td(off) tf Eon Eoff , Vce[V] 25 Typical capacitances vs collector-emitter voltage 3 5SMY 12K1721 | Doc. No: 5SYA , (RBSOA) 4 5SMY 12K1721 | Doc. No: 5SYA 1323-03 04 14 1500 2000 Mechanical properties 3 , Form of delivery Description Part number Picked wafer die (waffle pack) 5SMY 12K1721 Sawn


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PDF 12K1721 CH-5600
2014 - Not Available

Abstract:
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No , min µs 175 -40 150 °C 5SMY 12J1280 IGBT characteristic values 2) Parameter , of 6 5SMY 12J1280 Mechanical properties Parameter Unit Overall die L x W 10.2 x 10.2 , Description Part number Unsawn 6" wafer die 5SMY 76J1280 Sawn 6" wafer die (on blue tape) 5SMY , the right to change specifications without notice. Doc. No. 5SYA 1321-03 04 14 page 3 of 6 5SMY


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PDF 12J1280 CH-5600
2014 - Not Available

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1325-03 04 14 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra , €“ 9 2 5SMY 12J1721 | Doc. No. 5SYA 1325-03 04 14 tr td(off) tf Eon Eoff ISC , voltage 3 5SMY 12J1721 | Doc. No. 5SYA 1325-03 04 14 30 0.00 35 Fig. 4 0.10 0.20 Qg , ] Fig. 5 Safe operating area (RBSOA) 4 5SMY 12J1721 | Doc. No. 5SYA 1325-03 04 14 1500 2000 , pack) 5SMY 12J1721 Sawn 6" wafer die (on blue tape) 5SMY 86J1721 5SMY 12J1721 | 5SYA


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PDF 12J1721 CH-5600
2012 - Not Available

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1324-02 11 02 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low , Characteristic values according to IEC 60747 ­ 9 2 5SMY 12G1721| Doc. No. 5SYA 1324-02 11 02 100 100 , Fig. 4 Typical gate charge characteristics 3 5SMY 12G1721| Doc. No. 5SYA 1324-02 11 02 2.5 , 500 1000 VCE [V] 1500 2000 Fig. 5 Safe operating area (RBSOA) 4 5SMY 12G1721| Doc. No. 5SYA , is exclude 5SMY 12G1721 | 5SYA 1324-02 11 02 ABB Switzerland


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PDF 12G1721 CH-5600 12G1721
2014 - 76K1280

Abstract:
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No , min µs 175 -40 150 °C 5SMY 12K1280 IGBT characteristic values 2) Parameter , of 6 5SMY 12K1280 Mechanical properties Parameter Unit Overall die L x W mm exposed , Description Part number Unsawn 6" wafer die 5SMY 76K1280 Sawn 6" wafer die (on blue tape) 5SMY , the right to change specifications without notice. Doc. No. 5SYA 1319-03 04 14 page 3 of 6 5SMY


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PDF 12K1280 CH-5600 76K1280
2013 - Not Available

Abstract:
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No , min µs 175 -40 150 °C 5SMY 12K1280 IGBT characteristic values 2) Parameter , 2 of 6 5SMY 12K1280 Mechanical properties Parameter Unit Overall die L x W mm , notice. Doc. No. 5SYA 1319-02 Dez 12 page 3 of 6 5SMY 12K1280 200 200 VCE = 20 V 25 °C , right to change specifications without notice. Doc. No. 5SYA 1319-02 Dez 12 page 4 of 6 5SMY


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PDF 12K1280 CH-5600
2014 - Not Available

Abstract:
Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No , min µs 175 -40 150 °C 5SMY 12M1280 IGBT characteristic values 2) Parameter , of 6 5SMY 12M1280 Mechanical properties Parameter Unit Overall die L x W mm exposed , Description Part number Unsawn 6" wafer die 5SMY 76M1280 Sawn 6" wafer die (on blue tape) 5SMY , change specifications without notice. Doc. No. 5SYA 1322-03 04 14 page 3 of 6 5SMY 12M1280 300


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PDF 12M1280 CH-5600
2012 - 5SMY 12J1721

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1325-02 11 02 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low , Characteristic values according to IEC 60747 ­ 9 2 5SMY 12J1721 | Doc. No. 5SYA 1325-02 11 02 150 150 , collector-emitter voltage Fig. 4 Typical gate charge characteristics 3 5SMY 12J1721 | Doc. No. 5SYA 1325-02 , 0.5 0.0 0 500 1000 VCE [V] 1500 2000 Fig. 5 Safe operating area (RBSOA) 4 5SMY 12J1721 , instructions in this document is exclude 5SMY 12J1721 | 5SYA 1325-02 11 02 ABB Switzerland


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PDF 12J1721 CH-5600 12J1721 5SMY 12J1721
2014 - Not Available

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1326-03 04 14 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra , 5SMY 12M1721 | Doc. No. 5SYA 1326-03 04 14 tr td(off) tf Eon Eoff ISC VCC = 900 V , Typical capacitances vs collector-emitter voltage 3 5SMY 12M1721 | Doc. No. 5SYA 1326-03 04 14 30 , 1.0 0.5 0.0 0 500 1000 VCE [V] Fig. 5 Safe operating area diode (SOA) 4 5SMY , Description Part number Picked wafer die (waffle pack) 5SMY 12M1721 Sawn 6" wafer die (on blue


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PDF 12M1721 CH-5600
2012 - Not Available

Abstract:
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No , the right to change specifications without notice. 5SMY 12M1280 IGBT characteristic values , 2 of 6 5SMY 12M1280 Mechanical properties Parameter Overall die L x W Dimensions exposed L x , change specifications without notice. Doc. No. 5SYA 1319-02 Dez 12 page 3 of 6 5SMY 12M1280 , specifications without notice. Doc. No. 5SYA 1319-02 Dez 12 page 4 of 6 5SMY 12M1280 20 10 Cies


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PDF 12K1280 CH-5600
2014 - 5SMY 86G1721

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1324-03 04 14 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra , €“ 9 2 5SMY 12G1721| Doc. No. 5SYA 1324-03 04 14 tr td(off) tf Eon Eoff ISC VCC , 10 15 20 Vce[V] 25 Typical capacitances vs collector-emitter voltage 3 5SMY 12G1721 , operating area (RBSOA) 4 5SMY 12G1721| Doc. No. 5SYA 1324-03 04 14 1500 2000 Mechanical , ) 5SMY 86G1721 5SMY 12G1721 | 5SYA 1324-03 04 14 Outline drawing 4) Note: all dimensions are


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PDF 12G1721 CH-5600 5SMY 86G1721
2012 - Not Available

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1323-02 11 02 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low , Characteristic values according to IEC 60747 ­ 9 2 5SMY 12K1721 | Doc. No: 5SYA 1323-02 200 175 150 25 °C , voltage Fig. 4 Typical gate charge characteristics 3 5SMY 12K1721 | Doc. No: 5SYA 1323-02 2.5 , 500 1000 VCE [V] 1500 2000 Fig. 5 Safe operating area (RBSOA) 4 5SMY 12K1721 | Doc. No: 5SYA , is exclude 5SMY 12K1721 | 5SYA 1323- 02 11 02 ABB Switzerland


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PDF 12K1721 CH-5600 12K1721
2012 - 12M1721

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1326-02 11 02 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low , Characteristic values according to IEC 60747 ­ 9 2 5SMY 12M1721 | Doc. No. 5SYA 1326-02 300 275 250 225 , collector-emitter voltage Fig. 4 Typical gate charge characteristics 3 5SMY 12M1721 | Doc. No. 5SYA 1326-02 , 0.0 0 500 1000 VCE [V] 1500 2000 Fig. 5 Safe operating area diode (SOA) 4 5SMY 12M1721 | Doc , instructions in this document is exclude 5SMY 12M1721 | 5SYA 1326-02 11 02 ABB Switzerland


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PDF 12M1721 CH-5600 12M1721
2012 - 132102

Abstract:
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA , change specifications without notice. 5SMY 12J1280 IGBT characteristic values Parameter Collector , change specifications without notice. Doc. No. 5SYA 1321-02 Dez 12 page 2 of 6 5SMY 12J1280 , 1321-02 Dez 12 page 3 of 6 1.14±0.05 8.67 5SMY 12J1280 150 150 VCE = 20 V 125 125 , . Doc. No. 5SYA 1321-02 Dez 12 page 4 of 6 5SMY 12J1280 20 10 15 VCC = 600 V Cies


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PDF 12J1280 CH-5600 132102
2014 - Not Available

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1695-01 08 13 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon , saturation voltage is given at chip level 2 5SMY 12M1730 | 5SYA 1695-00 09 11 VCC = 900 V, IC = 150 A , voltage 3 5SMY 12M1730 | 5SYA 1695-00 09 11 30 35 0.0 Fig. 4 0.2 0.4 0.6 0.8 QG , 60747 – 15 ) 5SMY 12M1730 | 5SYA 1695-01 08 13 Outline drawing 4 Note: all dimensions are


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PDF 12M1730 CH-5600
2012 - Not Available

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1324-01 12 01 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1) Parameter Collector-emitter voltage DC collector current , according to IEC 60747 ­ 9 2 5SMY 12G1721 | Doc. No. 5SYA 1324-01 100 100 VCE = VGE 75 25 °C , gate charge characteristics 3 5SMY 12G1721 | Doc. No. 5SYA 1324-01 Mechanical properties


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PDF 12G1721 CH-5600
2012 - Not Available

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1323-01 12 01 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1) Parameter Collector-emitter voltage DC collector current , according to IEC 60747 ­ 9 2 5SMY 12K1721 | 5SYA 1323-01 200 175 150 25 °C 125 IC [A] 100 150 °C , Typical gate charge characteristics 3 5SMY 12K1721 | 5SYA 1323-01 Mechanical properties


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PDF 12K1721 CH-5600
2011 - Not Available

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1318-01 11 06 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: alpha-Si and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage DC collector , according to IEC 60747 ­ 9 2 5SMY 12M1721 | Doc. No. 5SYA 1318-01 11 06 300 300 VCE = VGE 250 , Typical gate charge characteristics 3 5SMY 12M1721 | Doc. No. 5SYA 1318-01 11 06 Mechanical


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PDF 12M1721 CH-5600
2012 - 169800

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1698-00 12 08 5SMY 12M6501 IGBT-Die VCE = 6500 V IC = 31 A Ultra low loss IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1) Parameter Collector-emitter voltage DC collector current Peak , at chip level 2 5SMY 12M6501 | Doc. No. 5SYA 1698-00 63 63 VCE = 25 V 47 25 °C 47 , characteristics 3 5SMY 12M6501 | Doc. No. 5SYA 1698-00 Mechanical properties 6) Parameter Symbol Overall


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PDF 12M6501 CH-5600 169800
2012 - 5SMY 12J1721

Abstract:
Text: Data Sheet, Doc. No. 5SYA 1325-01 12 01 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1) Parameter Collector-emitter voltage DC collector current , according to IEC 60747 ­ 9 2 5SMY 12J1721 | Doc. No. 5SYA 1325-01 150 150 VCE = VGE 125 125 , . 4 Typical gate charge characteristics 3 5SMY 12J1721 | Doc. No. 5SYA 1325-01 Mechanical


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PDF 12J1721 CH-5600 5SMY 12J1721
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