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Part Manufacturer Description Datasheet Download Buy Part
LT3519EMS#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519EMS-2#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519EMS-2#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519EMS-1#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519EMS-1#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519EMS#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C

5M MARKING CODE SCHOTTKY DIODE Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - 5M MARKING CODE SCHOTTKY DIODE

Abstract:
Text: RB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for , , Halogen Free/BFR Free and are RoHS Compliant 30 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE , affect device reliability. 1. 60 Hz for 1 cycle. MARKING DIAGRAM 1 5M M G G 2 THERMAL , 1.57 RqJA TJ, Tstg 635 -55 to +125 Unit mW mW/°C °C/W °C 5M = Device Code M = Date Code * G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon


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PDF RB521S30T1G, RB521S30T5G RB521S30T1/D 5M MARKING CODE SCHOTTKY DIODE
2011 - Diode marking CODE 5M SOD

Abstract:
Text: RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are , portable applications where space is limited. Features http://onsemi.com 30 V SCHOTTKY BARRIER DIODE , mA A 5M M G 1 5M M G G 2 = Device Code = Date Code * = Pb-Free Package ESD Rating: Class , Compliant* SOD-523 CASE 502 1 CATHODE 2 ANODE MARKING DIAGRAM MAXIMUM RATINGS Rating Reverse , ) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device


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PDF RB521S30T1G, NSVRB521S30T1G, RB521S30T5G OD-523 RB521S30T1/D Diode marking CODE 5M SOD 5M MARKING CODE SCHOTTKY DIODE RB521S30T1G 1n05 NSVRB521 RB521S30T1
Not Available

Abstract:
Text: RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes , hand−held and portable applications where space is limited. http://onsemi.com 30 V SCHOTTKY BARRIER DIODE Features       Extremely Fast Switching Speed Extremely Low , MARKING DIAGRAM MAXIMUM RATINGS Symbol Value Unit Reverse Voltage VR 30 IF 200 mA IFSM 1.0 A 5M M G G Vdc Forward Current DC 2 ANODE Rating Peak


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PDF RB521S30T1G, NSVRB521S30T1G, RB521S30T5G RB521S30T1/D
2005 - 5M MARKING CODE SCHOTTKY DIODE

Abstract:
Text: RB521S30T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high-speed , 30 V SCHOTTKY BARRIER DIODE 1 CATHODE MAXIMUM RATINGS Rating Symbol Value 2 ANODE , 0.50 5M = Device Code M = Date Code * G = Pb-Free Package (Note: Microdot may be in either , . MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR-5 Board , CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic 5M M G G 2 °C/W TJ, Tstg


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PDF RB521S30T1 RB521S30T1/D 5M MARKING CODE SCHOTTKY DIODE RB521S30T1G Diode marking CODE 5M SOD RB521S30T1
2005 - Not Available

Abstract:
Text: RB521S30T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high-speed , SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE ESD Rating: Class 1C per Human Body Model ESD Rating , °C/W °C 5M = Specific Device Code d = Date Code ORDERING INFORMATION Device RB521S30T1 , , damage may occur and reliability may be affected. 2 1 1 SOD-523 CASE 502 PLASTIC MARKING DIAGRAM , X Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14. 5M , 1982. 2. CONTROLLING DIMENSION


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PDF RB521S30T1 RB521S30T1/D
2003 - RB521S30T1

Abstract:
Text: RB521S30T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high speed , Voltage 0.5 V (max) @ IF = 200 mA · Low Reverse Current 30 V SCHOTTKY BARRIER DIODE MAXIMUM , Forward Voltage (IF = 200 mA) VF - - 0.50 Vdc 5M = Specific Device Code d = Date Code , Junction and Storage Temperature Range 1 2 SOD-523 CASE 502 PLASTIC MARKING DIAGRAM 1. FR , -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14. 5M , 1982. 2. CONTROLLING DIMENSION


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PDF RB521S30T1 RB521S30T1/D RB521S30T1 RB521S30T5
2007 - 5M MARKING CODE SCHOTTKY DIODE

Abstract:
Text: 0.0024 BSC 10° - 10° PART MARKING INFORMATION Part number Nana code 2CJQE YXXXXXX YWWP Subcon ID Date code P = Lead (Pb)-free Top marking Document Number: 94158 Revision: 27 , 20CJQ030PbF Vishay High Power Products Schottky Rectifier FEATURES ® · · · · · , The 20CJQ030PbF surface mount Schottky rectifier series has been designed for applications requiring , 20CJQ030PbF Vishay High Power Products Schottky Rectifier ELECTRICAL SPECIFICATIONS PARAMETER


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PDF 20CJQ030PbF OT-223 20CJQ030PbF 12-Mar-07 5M MARKING CODE SCHOTTKY DIODE 40HFL40S02 EIA-541 IRFP460
2008 - 2CJQJ

Abstract:
Text: Part number 2CJQJ YWW Subcon ID Date code YXXXXXX Nana code Top marking Bottom marking , 20CJQ100 Vishay High Power Products Schottky Rectifier ® FEATURES · Small foot print , SUMMARY IF(AV) VR 2A 100 V The 20CJQ100 surface mount Schottky rectifier series has been designed for , UNITS Schottky Rectifier TJ = 125 °C THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum , ambient Maximum thermal resistance, junction to lead Approximate weight Case style Device marking Note (1


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PDF 20CJQ100 OT-223 20CJQ100 12-Mar-07 2CJQJ
2007 - 2CJQJ

Abstract:
Text: number Nana code 2CJQJ YXXXXXX YWWP Subcon ID Date code P = Lead (Pb)-free Top marking , 20CJQ100PbF Vishay High Power Products Schottky Rectifier FEATURES ® · Small foot print , The 20CJQ100PbF surface mount Schottky rectifier series has been designed for applications requiring , Schottky Rectifier ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS at 1 A Maximum , Approximate weight oz. SOT-223 Marking device 2CJQJ Note (1) dP tot 1 -


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PDF 20CJQ100PbF OT-223 20CJQ100PbF 12-Mar-07 2CJQJ 40HFL40S02 EIA-541 IRFP460
2008 - 5M MARKING CODE SCHOTTKY DIODE

Abstract:
Text: Part number 2CJQE YWW Subcon ID Date code YXXXXXX Nana code Top marking Bottom marking , 20CJQ030 Vishay High Power Products Schottky Rectifier ® FEATURES · Small foot print , SUMMARY IF(AV) VR 2A 30 V The 20CJQ030 surface mount Schottky rectifier series has been designed for , : diodes-tech@vishay.com www.vishay.com 1 20CJQ030 Vishay High Power Products Schottky Rectifier ELECTRICAL , Approximate weight Case style Device Marking Note (1) SYMBOL TJ (1) TEST CONDITIONS VALUES - 55 to


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PDF 20CJQ030 OT-223 20CJQ030 12-Mar-07 5M MARKING CODE SCHOTTKY DIODE CODE TOP MARKING
2008 - 2cjqf

Abstract:
Text: 0.0024 BSC 10° - 10° PART MARKING INFORMATION Part number Nana code 2CJQF YXXXXXX YWW Subcon ID Date code Top marking Document Number: 93272 Revision: 27-Jul-07 Bottom , 20CJQ045 Vishay High Power Products Schottky Rectifier FEATURES ® · Small foot print , 20CJQ045 surface mount Schottky rectifier series has been designed for applications requiring very low , www.vishay.com 1 20CJQ045 Vishay High Power Products Schottky Rectifier ELECTRICAL SPECIFICATIONS


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PDF 20CJQ045 OT-223 20CJQ045 12-Mar-07 2cjqf sot223 device Marking 40HFL40S02 EIA-541 IRFP460
2007 - 2cjqh

Abstract:
Text: 0.0024 BSC 10° - 10° PART MARKING INFORMATION Part number Nana code 2CJQH YXXXXXX YWWP Subcon ID Date code P = Lead (Pb)-free Top marking Document Number: 94160 Revision: 27 , 20CJQ060PbF Vishay High Power Products Schottky Rectifier FEATURES ® · Small foot print , The 20CJQ060PbF surface mount Schottky rectifier series has been designed for applications requiring , www.vishay.com 1 20CJQ060PbF Vishay High Power Products Schottky Rectifier ELECTRICAL SPECIFICATIONS


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PDF 20CJQ060PbF OT-223 20CJQ060PbF 12-Mar-07 2cjqh 5M MARKING CODE SCHOTTKY DIODE 40HFL40S02 EIA-541 IRFP460
2008 - 5M MARKING CODE SCHOTTKY DIODE

Abstract:
Text: ° 0.287 - PART MARKING INFORMATION Part number 2CJQH YWW Subcon ID Date code YXXXXXX Nana code , 20CJQ060 Vishay High Power Products Schottky Rectifier ® FEATURES · Small foot print , SUMMARY IF(AV) VR 2A 60 V The 20CJQ060 surface mount Schottky rectifier series has been designed for , TJ = 125 °C VALUES 0.59 0.75 0.56 0.67 0.1 mA V UNITS Schottky Rectifier THERMAL - MECHANICAL , Device marking Note (1) SYMBOL TJ (1) TEST CONDITIONS VALUES - 55 to 150 25 UNITS °C


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PDF 20CJQ060 OT-223 20CJQ060 12-Mar-07 5M MARKING CODE SCHOTTKY DIODE CODE TOP MARKING
2000 - Not Available

Abstract:
Text: MBR20200CTP SWITCHMODETM Power Dual Schottky Rectifier . . . using Schottky Barrier technology , improved Schottky performance at frequencies from 250 kHz to 5.0 MHz. http://onsemi.com · 200 Volt , (10,000 V/µs) Dual Diode Construction - Terminals 1 and 3 Must be Connected for Parallel Operation at Full Rating SCHOTTKY BARRIER RECTIFIER 20 AMPERES 200 VOLTS 1 2, 4 3 4 Mechanical , Shipped 50 units per plastic tube Marking : B20200P Leads are Readily Solderable MAXIMUM RATINGS (Per


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PDF MBR20200CTP r14525 MBR20200CTP/D
2003 - Not Available

Abstract:
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P-Channel, with 1.0 A, Schottky Barrier , -2.5 V ID MAX -2.1 A · Leadless SMD Package Featuring a MOSFET and Schottky Diode · 40% Smaller than , Applications SCHOTTKY DIODE VR MAX 20 V VF TYP 0.510 V IF MAX 1.0 A MOSFET MAXIMUM RATINGS (TJ = 25 , -55 to 150 260 A °C °C ChipFET CASE 1206A STYLE 3 A D W P-Channel MOSFET SCHOTTKY DIODE C Units V V A , Voltage DC Blocking Voltage Average Rectified Forward Voltage SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25


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PDF NTHD4P02F NTHD4P02F/D
2006 - 5M MARKING CODE SCHOTTKY DIODE

Abstract:
Text: (Note 2) 4.5 PD W 1.5 TA = 25°C SCHOTTKY DIODE MARKING DIAGRAM 1 6 2 JK M G 5 G , NTLJF3118N Product Preview Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode , 2x2 mm WDFN Package http://onsemi.com MOSFET · WDFN 2x2 mm , Thin Environments Low VF 2 A Schottky Diode This is a Pb-Free Device 100 mW @ 1.8 V SCHOTTKY , Number: NTLJF3118N/D NTLJF3118N SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted


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PDF NTLJF3118N SC-88 NTLJF3118N/D 5M MARKING CODE SCHOTTKY DIODE NTLJF3118N
2007 - marking 04L sot23

Abstract:
Text: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes , Forward Voltage 40 VOLTS SCHOTTKY BARRIER DIODES Features ·Pb-Free Package is Available ANODE , /ANODE MARKING DIAGRAM 3 1 2 SOT-23 (TO-236AB) CASE 318 STYLE 11 CB M G Stresses , -4 @ 1.0 x 1.0 in pad. CB MG G 1 = Specific Device Code = Date Code * = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary de pending


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PDF BAS40-04LT1 marking 04L sot23 sot23 04l 04L sot23 BAS40-04L BAS40-04LT1 marking 04L to236AB marking cb bas40
2000 - Not Available

Abstract:
Text: NTMSD2P102LR2 Product Preview FETKY Power MOSFET and Schottky Diode Dual SO­8 Package Features , Provided Applications http://onsemi.com Schottky Diode with Low VF Allowing for Flexibility in Application Use MOSFET ­2.3 AMPERES ­20 VOLTS 90 mW @ VGS = ­4.5 V SCHOTTKY DIODE 2.0 AMPERES 20 VOLTS 580 , ), · Logic Level Gate Drive · Independent Pin­Outs for MOSFET and Schottky Die · Less Component , TOP VIEW MARKING DIAGRAM & PIN ASSIGNMENTS Anode Anode Source Gate 1 2 3 4 (Top View) E2P102 L Y


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PDF NTMSD2P102LR2
2005 - b10 45g

Abstract:
Text: Week = Device Code = Pb-Free Package = Diode Polarity MAXIMUM RATINGS Rating Peak Repetitive , MBRB1045, MBRD1045 Preferred Device SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode . State-of-the-art geometry features epitaxial construction with oxide passivation and , , free wheeling diodes, and polarity protection diodes. Features http://onsemi.com SCHOTTKY BARRIER


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PDF MBRB1045, MBRD1045 MBRB1045/D b10 45g ON B10 45G 838 b10 45g b1045 diode b1045g MBRD1045
2008 - DTC123J

Abstract:
Text: Silicon epitaxial planar digital transistor Schottky barrier diode Abbreviated symbol : L20 ROHM , Type Package Marking Code Basic ordering unit (pieces) EML20 EMT6 L20 T2R 8000 1/3 , EML20 Transistors General purpose transistor (isolated transistor and diode ) EML20 DTC123J A , built-in transistor. 2/3 EML20 Transistors Electrical characteristic curves Di1 DTr2 10m 5m , °C 100°C 2 1 500m 200m 100m 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT


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PDF EML20 DTC123J RB521S-30 EML20
2006 - b10 45g

Abstract:
Text: Pb-Free Package = Diode Polarity MARKING DIAGRAM Unit Peak Repetitive Reverse Voltage Working , MBRB1045, MBRD1045 Preferred Device SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode . State-of-the-art geometry features epitaxial construction with oxide passivation and , , free wheeling diodes, and polarity protection diodes. http://onsemi.com SCHOTTKY BARRIER


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PDF MBRB1045, MBRD1045 MBRB1045/D b10 45g b1045 MBRD1045T4G b1045 diode MBRD1045 369C MBRB1045G MBRB1045T4 MBRB1045T4G ON B10 45G
2010 - b10 45g

Abstract:
Text: G AKA = Assembly Location = Year = Work Week = Device Code = Pb-Free Package = Diode , MBRB1045, MBRD1045 Preferred Device SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode . State-of-the-art geometry features epitaxial construction with oxide passivation and , , free wheeling diodes, and polarity protection diodes. http://onsemi.com SCHOTTKY BARRIER


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PDF MBRB1045, MBRD1045 MBRB1045/D b10 45g b1045 940 b10 45g b1045g MBRB1045T4G ON B10 45G diode b1045 MBRD1045T4G MBRB1045 MBRB1045T4
2000 - 357D-01

Abstract:
Text: MBRP20035L SWITCHMODETM Schottky Power Rectifier POWERTAPE III Package . . . employing the Schottky Barrier principle in a large area metal­to­silicon power diode . State of the art geometry , voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes , Stress Protection High dv/dt Capability http://onsemi.com SCHOTTKY BARRIER RECTIFIER 200 AMPERES , Terminal Torque: 25­40 lb­in max. Shipped 50 units per foam Marking : MBRP20035L 1 1 2 POWERTAP


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PDF MBRP20035L r14525 MBRP20035L/D 357D-01 MBRP20035L
2000 - MBRP30035L

Abstract:
Text: MBRP30035L SWITCHMODETM Schottky Power Rectifier POWERTAPE III Package . . . employing the Schottky Barrier principle in a large area metal­to­silicon power diode . State of the art geometry , voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes , Stress Protection High dv/dt Capability http://onsemi.com SCHOTTKY BARRIER RECTIFIER 300 AMPERES , Terminal Torque: 25­40 lb­in max. Shipped 50 units per foam Marking : MBRP30035L 1 1 2 POWERTAP


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PDF MBRP30035L r14525 MBRP30035L/D MBRP30035L
2001 - dmbr20200ctp

Abstract:
Text: A YY WW B20200P AKA YY = Year WW = Work Week B20200P= Device Code AKA = Diode Polarity , MBR20200CTP SWITCHMODETM Power Dual Schottky Rectifier . . . using Schottky Barrier technology , improved Schottky performance at frequencies from 250 kHz to 5.0 MHz. · 200 Volt Blocking Voltage · , /µs) Dual Diode Construction ­ Terminals 1 and 3 Must be Connected for Parallel Operation at Full Rating http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES 200 VOLTS 1 2, 4 Mechanical


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PDF MBR20200CTP r14525 MBR20200CTP/D dmbr20200ctp b20200 B20200P MBR20200CTP MBR20200CTP-D
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