2007 - ICC1-100
Abstract: ICC150
Text: with NOR 5962-R110-94. Changes in accordance with NOR 5962- R013 -96. Not used. Not used. Incorporated NOR's 5962-R110-94 and 5962- R013 -96. Made changes to table I for device type 07. Redraw entire
|
Original
|
PDF
|
5Y243,
MIL-H-38534
8K957.
5962-R189-92.
5962-R110-94.
5962-R013-96.
5962-R110-94
5962ents
U4388
ICC1-100
ICC150
|
SK9860
Abstract: SK5036A SK9000 0/B60C 800 Si SK7183
Text: 0.2 -4 0/+ 1 2 5 0.2 0.2 R-002 R-002 R-004 .25 R-013 * R-017* R -014" R-018* R-013 * R-017* R-013 * 12 70 150 1.4 700 1.85 70 6 700 250 1.85 1.2 6 6 240 250 1.2 1.2 R-013â R-013 * 12 12 12 15 250 250 250 300 R-013 * R-013 * R-013 , 725 1.3 1.3 1.1 R-013 * R-017* R-017â R-013 * R-017* R-017* R-017* 1500 100 -6 5 , 300 5000 5000 1.4 1.4 Si Standard 400 3 250 1.2 R-013 * SK7039 SK7042
|
OCR Scan
|
PDF
|
SK3051P10
SK3080
SK3081
SK3081P100
SK3087
SK3088
SK3089
SK3090
SK3100
SK3100P10
SK9860
SK5036A
SK9000
0/B60C 800 Si
SK7183
|
qml-38535
Abstract: CLC401 CQCC1-N20 EL2171 950517 linear application handbooks national semiconductor
Text: REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A In accordance with notice of revision 5962-R309-92. 93-02-10 M. A. FRYE B In accordance with notice of revision 5962-R167-93. 93-06-11 M. A. FRYE C In accordance with notice of revision 5962- R013 -95. 94-11-03 M. A. FRYE D In accordance with notice of revision 5962-R132-95. 95-05-17 M. A. FRYE E Delete CAGE code 64762. Make change to paragraph 1.3, VOUT and HD3 tests as
|
OCR Scan
|
PDF
|
5962-R309-92.
5962-R167-93.
5962-R013-95.
5962-R132-95.
qml-38535
CLC401
CQCC1-N20
EL2171
950517
linear application handbooks national semiconductor
|
SK9009
Abstract: SK9005 SK3088 SK3500 SK3602 SK3090 SK7208 SK3925 SK9007 SK9091
Text: 250 1.2 R-013 Standard SK3501 Si 600 40 400 1.3 1000 -65/+190C . R-017 Standard SK3517 SI 600 , Si 600 800 12 240 1.35 100.0 -65/+200 ' R-013 Standard SK3585 Si 600 15 300 1.47 R-017 Standard SK3586A Si 200 250 12 ' 200 1.5 25 -65/+150 C 0.2 R-013 Fast-Recovery SK3587A Si 600 725 12 150 1.4 -65/+150 C 0,2 R-013 Fast-Recovery SK3588A Si 200 275 70 700 1.85 - 0.2 R-017 Fast-Recovery SK3589A Si 600 725 70 700 1.85 â40/+125 0.2 R-017 Fast-Recovery SK3599 SI 400 6 250 1.2 R-013 Standard
|
OCR Scan
|
PDF
|
SK3017B
R-034
SK3031A
SK3032A
R-002
SK3033A
SK3043B
R-004
SK9009
SK9005
SK3088
SK3500
SK3602
SK3090
SK7208
SK3925
SK9007
SK9091
|
sk832
Abstract: SK821 SK841 SK993 SK3110 SK9975 SK952 SK9105 sk9154 SK9709
Text: +125C R-013 SK9153 Si 54 27 600 0.58 VPK 55,000 PK -65 to +150C R-013 SK9154 Si 48 50 800 0.60 VPK 75 , 77 15 M-002 SK832 84 15 M-002 SK836 87 15 ⢠M-002 SK841 93 15 M-002 SK847 98 15 M-002 SK849
|
OCR Scan
|
PDF
|
SK3110
SK7332
100mA
R-021
R-069
SK10180
R-117
SK10181
SK10182
sk832
SK821
SK841
SK993
SK9975
SK952
SK9105
sk9154
SK9709
|
sk3081 diode
Abstract: SK3090 SK5060 SK7357 SK5036A R017 SK3639 SK7208 sk9779 SK3925
Text: -004 SK3500 Si Standard 600 12 250 1.2 R-013 * SK3501 Si Standard 600 40 400 1.3 1000 -65/+ 190 R , -018* SK3584 Si Standard 600 800 12 240 1.35 1000 -65/+ 200 R-013 * SK3585 Si Standard 600 15 300 1.47 R-017* SK3586A Si Fast-Recovery 200 250 12 200 1.5 25 -65/+ 150 0.2 R-013 " SK3587A Si Fast-Recovery 600 725 12 150 1.4 -65/+ 150 0.2 R-013 " SK3S88A Si Fast-Recovery 200 275 70 700 1.85 0.2 R-017" SK3589A Si Fast-Recovery 600 725 70 700 1.85 -40/+125 0.2 R-017* SK3599 Si Standard 400 6 250 1.2 R-013 * SK3600 Si
|
OCR Scan
|
PDF
|
TQ2bfl73
SK3017B
R-034
SK3031A
SK3032A
R-002
SK3033A
SK3043B
sk3081 diode
SK3090
SK5060
SK7357
SK5036A
R017
SK3639
SK7208
sk9779
SK3925
|
2000 - lm002
Abstract: rx2 1326
Text: ] typ Suggested PCB Pad Layout R0.005 [ R0.13 ] R0.005 [ R0.13 ] 0.250 [6.35] max 0.440 [11.18 , R0.005 [ R0.13 ] R0.005 [ R0.13 ] 0.010 [0.25] min 0.004 [0.10] 0°- 5° 0.250 [6.35] max
|
Original
|
PDF
|
LM00200
300mA
S558-5500-02
S558-5500-04
S558-5500-12
100MHz
100kHz
100MHz
lm002
rx2 1326
|
qml-38535
Abstract: GDIP1-T16
Text: REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R035-96. 96-01-11 M. A. Frye B Changes in accordance with NOR 5962- R013 -99. 98-10-28 R. Monnin C Changes in accordance with NOR 5962-R015-99 98-11-25 R. Monnin D Changes to digital input capacitance and voltage output slew rate tests in table I. Update boilerplate. Redrawn, -rrp 99-03-01 R. Monnin REV
|
OCR Scan
|
PDF
|
5962-R035-96.
5962-R013-99.
5962-R015-99
qml-38535
GDIP1-T16
|
Q65425-L0090E001
Abstract: Q65425-L90 R023
Text: Basic resistance (I < 1 mA, B = 0 T) R01-3 160 280 Center symmetry3) M 3 % Relative resistance change (R0 = R01-3 , R04-6 at B = 0 T) B = ± 0.3 T4) B=±1T RB/R0 Temperature , = f(T), B = 0.2 T Typical MR resistance versus temperature R01-3 , 4-6 = f(TA), B = Parameter Typical MR resistance versus magnetic induction B R01-3 , 4-6 = f(B), TA = 25 °C Data Sheet 4
|
Original
|
PDF
|
R01-2
R02-3
R04-5
R05-6
R01-3,
Q65425-L0090E001
Q65425-L90
R023
|
Not Available
Abstract: No abstract text available
Text: (I < 1 mA, B = 0 T) R01-3 160.280 Center symmetry3) M RB/R0 3 % Storage , = R01-3 , R04-6 at B = 0 T) B = ± 0.3 T4) B=±1T Temperature coefficient B=0T B = ± 0.3 T B , temperature VIN = f(T), B = 0.2 T Typical MR resistance versus temperature R01-3 , 4-6 = f(TA), B = Parameter Typical MR resistance versus magnetic induction B R01-3 , 4-6 = f(B), TA = 25 °C Data Sheet
|
Original
|
PDF
|
R01-2
R02-3
R04-5
R05-6
R01-3,
|
2000 - R0005
Abstract: S558-5500 60MHZ S558-5500-02 S558-5500-04 S558-5500-12 550-002
Text: ] 0.040 [1.02] typ R0.005 [ R0.13 ] R0.005 [ R0.13 ] Suggested PCB Pad Layout 0.010 [0.25] min , .005 [ R0.13 ] 0.025 [0.64] R0.005 [ R0.13 ] Suggested PCB Pad Layout 0.010 [0.25] min 0°- 5
|
Original
|
PDF
|
LM00200
350mA
S558-5500-02
S558-5500-04
S558-5500-12
to004
R0005
S558-5500
60MHZ
S558-5500-02
S558-5500-04
S558-5500-12
550-002
|
1996 - Q65110-L80F
Abstract: Q65410-L80E
Text: heatsink in still air mW/K Gth case Gth A 20 2 Basic resistance (I 1 mA; B = 0 T) R01-3 , = 25 °C) Relative resistance change (R = R01-3 , R04-6 at B = 0 T) B = ± 0.3 T4) B , Typical MR resistance versus temperature R01-3 , 4-6 = f(TA), B = Parameter Typical MR resistance versus magnetic induction B R01-3 , 4-6 = f(B), TA = 25 °C Semiconductor Group 4 Siemens
|
Original
|
PDF
|
Q65410-L80E
Q65110-L80F
R01-2
R02-3
R04-5
R05-6
R01-3,
Q65110-L80F
Q65410-L80E
|
1 watt SMD resistors derating
Abstract: No abstract text available
Text: Low Ohmic Resistor SMD for current sense - moulded Key features ideal for current sensing ⢠up to 1 watt dissipation at 70°C ⢠supplied taped and reeled ⢠low cost for volume applications * wide value range R005 to RIO ⢠fully automated manufacture * S M D Resistors innovative design ⢠2 watt design available Q3 ' 98 ⢠type KL series This is a new product from , : ±5% (1% available by request) Temperature Coefficient: < R013 180p p m /°C , Power Rating
|
OCR Scan
|
PDF
|
1000/R
F0733
1 watt SMD resistors derating
|
2004 - broadband transformers
Abstract: S558-5500-12 60MHZ S558-5500-02 S558-5500-04 S558-5500-16 tx2 1219
Text: [1.78] R0.005 [ R0.13 ] R0.005 [ R0.13 ] Suggested PCB Pad Layout 0.010 [0.25] min 0.250 , [15.24] 0.090 [2.29] R0.005 [ R0.13 ] 0.039 [0.99] typ 0.046 [1.17] 0.016 ±0.002 [0.41 ±0.05] R0.005 [ R0.13 ] 0.025 [0.64] 0.010 [0.25] min 0.25 [6.35] max 0°- 5° 0.004 [0.10
|
Original
|
PDF
|
LM00200
350mA
S558-5500-02
S558-5500-04
S558-5500-12
S558-5500-16
broadband transformers
S558-5500-12
60MHZ
S558-5500-02
S558-5500-04
S558-5500-16
tx2 1219
|
|
1996 - Q65420-L90
Abstract: Q65420-L0090E001 r046 q65420l90 magneto R023
Text: T) R01-3 160.280 Center symmetry3) M RB/R0 3 % Storage temperature Power dissipation1) Characteristics (TA = 25 °C) Relative resistance change (R0 = R01-3 , R04-6 at , versus temperature R01-3 , 4-6 = f(TA), B = Parameter Typical MR resistance versus magnetic induction B R01-3 , 4-6 = f(B), TA = 25 °C Semiconductor Group 4 Siemens
|
Original
|
PDF
|
Q65420-L90
Q65420-L0090E001
R01-2
R02-3
R04-5
R05-6
R01-3,
Q65420-L90
Q65420-L0090E001
r046
q65420l90
magneto
R023
|
1996 - magneto resistor
Abstract: Q65425-L90 R01-3 Q65425-L0090E001 magneto
Text: resistance (I < 1 mA, B = 0 T) R01-3 160 280 Center symmetry3) M 3 % Relative resistance change (R0 = R01-3 , R04-6 at B = 0 T) B = ± 0.3 T4) B=±1T RB/R0 Temperature coefficient , versus temperature R01-3 , 4-6 = f(TA), B = Parameter Typical MR resistance versus magnetic induction B R01-3 , 4-6 = f(B), TA = 25 °C Semiconductor Group 4 Siemens
|
Original
|
PDF
|
Q65425-L90
Q65425-L0090E001
R01-2
R02-3
R04-5
R05-6
R01-3,
magneto resistor
Q65425-L90
R01-3
Q65425-L0090E001
magneto
|
2004 - rx2 1326
Abstract: broadband transformers 550-002 5500-02 S558-5500-02
Text: ] 0.040 [1.02] typ Suggested PCB Pad Layout R0.005 [ R0.13 ] R0.005 [ R0.13 ] 0.250 [6.35] max 0.440 , ] R0.005 [ R0.13 ] 0.046 [1.17] 0.016 ±0.002 [0.41 ±0.05] 0.039 [0.99] typ 0.025 [0.64] R0.005 [ R0.13
|
Original
|
PDF
|
LM00200
350mA
S558-5500-02
S558-5500-04
S558-5500-12
rx2 1326
broadband transformers
550-002
5500-02
S558-5500-02
|
Q65110-L80F
Abstract: Q65410-L80E TESLA 1
Text: 0 T) R01-3 R04-6 110.220 Center symmetry3) M RB/R0 6 % > 1.7 Electrical Characteristics (TA = 25 °C) Relative resistance change (R = R01-3 , R04-6 at B = 0 T) B = ± , temperature VIN 1-3, 4-6 = f(T), B = 0.3 T Typical MR resistance versus temperature R01-3 , 4-6 = f(TA), B = Parameter Typical MR resistance versus magnetic induction B R01-3 , 4-6 = f(B), TA = 25 °C
|
Original
|
PDF
|
Q65410-L80E
Q65110-L80F
R01-2
R02-3
R04-5
R05-6
R01-3,
Q65110-L80F
Q65410-L80E
TESLA 1
|
2001 - S558-5999-T4
Abstract: S558-5999-M8 S558-5999-M9 S558-5999-P3 S558-5999-T3 R0015
Text: [2.29] 0.039 [0.99] typ 0.046 [1.17] 0.016 ±0.002 [0.41 ±0.050] R0.005 [ R0.13 ] 0.025 [0.64] R0.005 [ R0.13 ] Suggested PCB Pad Layout 0.010 [0.25] min 0°- 5° 0.004 [0.10
|
Original
|
PDF
|
10/100/1000Base-T
LM00300
100MHz
40MHz
100KHz
S558-5999-M8
f/50MHz)
S558-5999-T4
S558-5999-M8
S558-5999-M9
S558-5999-P3
S558-5999-T3
R0015
|
R1025
Abstract: LPF-C181301 C38801
Text: UNCONTEOL L ED DOCUMENT 8.38 [0.330] I 98 ,55 [3.880] m um IIGHTPIPF ft IIGHT SHIFII) ASSFMRIY PART NUMBER LPFâC181301 S REV. D REV. E.C.N. NUMBER AND REVISION COMMENTS DATE A E.C.N. #11349. 8.30.06 , SCALE: N/A UNCONTROLLED DOCUMENT UGHTPIPE 11,73 [0,462] 98 ,55 [3,880] 88,63 [3,489] ÃiO. ffim heBEI , .138] J (18 PLS.) 6.10 CO,£40] _ MIN, 00 [0,079] Iâ 1, 98 [0,078] 4.57 [0.180] (12 PLS.) 0,66 [0,026 , .079: â¡D 1,530 [0.060] R0.13 [R0.005] 1.40 C0.055] 5,84 [0,230] -1 RIO,25 [R0.404] Iâ 2.30 [0.091] R0
|
OCR Scan
|
PDF
|
C181301
03NFCENTIAL
D65EIINATBN
R1025
LPF-C181301
C38801
|
2001 - S558-5999-U1
Abstract: mini pci pcb layout S558-5999-L1 lm-004 L5 Package
Text: .005 [ R0.13 ] typ R0.005 [ R0.13 ] typ 0°- 5° Dimensions are inches [millimeters]. Standard dimension
|
Original
|
PDF
|
10/100BASE-T
LM00415
S558-5999-L1
S558-5999-L5
100MHz
S558-5999-U1
mini pci pcb layout
lm-004
L5 Package
|
2006 - Not Available
Abstract: No abstract text available
Text: R0.005 [ R0.13 ] R0.005 [ R0.13 ] 0.330 [8.38] 0.030 ±0.002 [0.76 ±0.05] 0.015 [0.38] 0°- 4
|
Original
|
PDF
|
S555-5999-48-F
200MH
10MHz
30MHz
50MHz
100MHz
200MHz
|
2001 - S553-6500-D3
Abstract: S553-6500-D1
Text: ] pitch 0.020 ±0.002 [0.51 ±0.05] 0.025 [0.64] R0.005 [ R0.13 ] typ R0.005 [ R0.13 ] typ 0.290
|
Original
|
PDF
|
TM01111
32-pin
S553-6500-D1
S553-6500-D3
S553-6500-D1
|
Not Available
Abstract: No abstract text available
Text: iiiiiiiiiiiiiiiiiiiiiiii 0.024 [0,61] R0,005 [ R0.13 ] R0,005 [ R0.13 ] 0.285+0.010 [7,24+0,25] \7 0.920 [23.37] NDTESi 1 .
|
OCR Scan
|
PDF
|
2002/9E/EC,
HAND-VDRK-04.
QVS001'
DC002
X5536500J6A
|
Not Available
Abstract: No abstract text available
Text: RECOMMENDED PC BOARD LAYOUT COMPONENT SIDE SHOWN SCALE 4-1 CATALOG NUMBER DESCRIPTION PERFORMANCE LEVEL 6 - 125 OPERATIONS + 1D DAYS MIXED 0A5 + 125 OPERATIONS 9 = 125 OPERATIONS + 10 DAY5 MIXED GAS + 125 OPERATIONS INSULATING MATERIAL H = HIGH TEMPERATURE MATERIAL VARIATIONS R013 - 5.2 mm [.2D5] LONG HEAT STAKE RETENTION PEGS FOR FEMALE RIGHT ANGLE. TERMINATION TYPE B = RIGHT ANGLE SOLDER FOR , R013 H_ (S E E TABLE) P CHKD DWG RELEASED TO CENTRAL FILE 04-13-96 CADE NO D9922 I DON 1253 I
|
OCR Scan
|
PDF
|
00D98-00197]
00020-D0059]
D9922
D4-06-B9
SE96877
|