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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
SER1590-102MLB SER1590-102MLB ECAD Model Coilcraft Inc General Purpose Inductor, 1uH, 20%, 1 Element, Ferrite-Core, SMD, 6226, CHIP, 6226, ROHS COMPLIANT
SER1590-102MLD SER1590-102MLD ECAD Model Coilcraft Inc General Purpose Inductor, 1uH, 20%, 1 Element, Ferrite-Core, SMD, 6226, CHIP, 6226, ROHS COMPLIANT
SER1590-102ML SER1590-102ML ECAD Model Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS
SER1590-102 SER1590-102 ECAD Model Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS
STELLARIS-3P-EXPLO-NETX-TCPIP STELLARIS-3P-EXPLO-NETX-TCPIP ECAD Model Texas Instruments NetX
STELLARIS-3P-MICDI-SMXFLOG-FS STELLARIS-3P-MICDI-SMXFLOG-FS ECAD Model Texas Instruments smxFLog
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Littelfuse Inc
59010-1-S-02-F REED PROXIMITY SENSOR, 6MM, 175VDC; Sensing Range Max:6mm; Sensor Mounting:-; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Supply Current:350mA; Product Range:59010 Series; Supply Voltage DC Max:175V RoHS Compliant: Yes 59010-1-S-02-F ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 59010-1-S-02-F Bulk 0 500 $8.91 $7.37 $6.2 $5.52 $5.52 More Info

59010-1-S-02-F datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
59010-1-S-02-F 59010-1-S-02-F ECAD Model HAMLIN Magnetic Sensors - Position, Proximity, Speed (Modules), Sensors, Transducers, SENSOR MAGNETIC SPST 6-10AT 175V Original PDF

59010-1-S-02-F Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: O S IT IO N k f - e — e — HEADER 6) CONTACTS ARE ON .2 5 0 /(6 .3 5 ) GRID , CHARTS FOR •B' DIM "B " D I M E N S I O N NQTESo 1 M ATERIAL CODES; ) "A"= NYLON 6 / 6 , -42002-¥ ¥ ¥ "□"= NYLON V-2 COLOUR:BLACK(ZYTEL 101F) B A S E N U M BER - 1 "E"= NYLON V-2 C IR C U IT LOLOUR:NATURAL 2, 3, & 4 P O S IT IO N HEADER A S S E M B L IE S P IN ( D O R 2) PLATING CODES; ■250±.005 (TYP) <6.35±0. 3) S I Z E - M A


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PDF SDA-42002-*
72015

Abstract: str 1195 E5859
Text: Q 02 03 05 06 19 10 - W 74738-105 il 5 6 f tF C I www.fciconnect.com W Eü , > < > f t ft f t >ft % ft < ft fi < ft! < > < > >X > >4 ÿ S ft f t 1 > < >X A < ÿ ft ft ¡ft , ft ft fi fi ft ¡ s f i x: f t ft f t ft ÿ ft î* f t <1 X f t V f t f t H * ! S a V cr v EI 72015-X018 47.95 46 C 8 A SHORTING , 1 I 1I code 213 3 4 KEY CODE 01 02 03 05 06 19 10 D IM E N S IO N S DIM A 5 .0 0 5 .7


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PDF T-00121 07/10/0C 72015 str 1195 E5859
T-TFBGA328-1414

Abstract: package weight s ab
Text: 1.2MAX. 0.1 S 0.2 6.0 0 0.1 S 1.0TYP. C 0.4TYP. 0.8TYP. 1.0TYP. B C D E F A D , 1.2MAX. 0.1 S 0.2 8.0 0 0.1 S 2.0TYP. 0.4TYP. A B C D E F D 0.4TYP. 0.8TYP , . C A B C D E F G H D 0.8TYP. 0.4TYP. 0.4TYP. 0.8TYP. 1.2TYP. 10.0 0 0.2 0.1 S , 0.2 10.0 0 0.1 S 1.4TYP. C 0.4TYP. 0.8TYP. 1.0TYP. 0.8TYP. 0.4TYP. B C D E F , C D E F G H D 0.8TYP. 0.4TYP. 0.4TYP. 0.8TYP. 1.2TYP. 10.0 0 0.2 0.1 S


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PDF T-TFBGA028-0606 T-TFBGA032-0608 T-TFBGA328-1414 75TYP. 25TYP. T-TFBGA328-1414 package weight s ab
L4004F91

Abstract: 14008L6
Text: O 2A F RO E S N L O T E & P C A E O IM N IO A U LIN AKG V R T N S EP G 8 A IA IO S E A E 1 , . 02 . 02 . 02 . 02 • S to ra g e tem p eratu re ra nge oth e rw ise sp e c itie d . T , t an am b ie n t te m p e ra tu re o f + 2 5 ° C unless t r S rL = 600 (2) (5) mA , 1.6 t.6 f .6 1.6 1.6 02 2.0 2.0 2.0 2.0 02 2.0 2.0 0.2 2.0 03 0.2 2.0 0.2 2.0 à , 0.2 0.2 2.0 0.2 l. f l 0.2 2.6 2.0 H I ' 0.2 "ED” " 01 2.6 0.2 2.0 ' 0.2 " 2.6 M


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2006 - s1206B33-u3

Abstract: S-1206 s1206b30
Text: *1. *2. GND CIN CL0.1 F 9 CIN CL 0.1 F 0.1 F CINCL S -1206VOUT-VSS0.1 F OS0.1 F CIN = 0.1 F L = 0.1 F C 9 S -1206 CMOS Rev.3.0_00 1 , 0.4 0.2 100 0 VIN = 3.5 V 5.0 V 6.5 V 200 300 400 500 600 700 IOUT [mA] S , 1.12 1.10 -40 -25 6 S -1206B12 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25°C -40°C S , ] ISS1 [A] Ta = 85°C 0 16 S -1206B30 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25


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PDF S-1206 OT-23-5SOT-89-3SNT-6AH OT-23-3 OT-89-3 S-1206 s1206B33-u3 s1206b30
2006 - s-1206b33-m3t1x

Abstract: S-1206 s1206b30
Text: F 0.5 1.2 1.1 0 -0.5 1.0 -0.4 - 0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t [ms] CMOS S , IOUT 3.8 CIN = CL = 0.1 F 2.2 -0.4 - 0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t [ms] S , F 4.2 -0.4 - 0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t [ms] 19 CMOS S -1206 Rev , 0.05 20 0.2 40 %/V mV 1 1 VIN = VOUT( S )1.0 V, IOUT = 30 mA, 40°CTa85°C ±120 , CIN CL0.1 F 9 CIN 0.1 F CL 0.1 F CINCL S -1206VOUTVSS 0.1 FOS


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PDF S-1206 S-1206 OT-23-3, OT-89-3, OT-23-3 OT-89-3 s-1206b33-m3t1x s1206b30
2014 - Not Available

Abstract: No abstract text available
Text: Boîte pos tale 133 95103 Argenteuil T +33 1 34 34 30 60 F +33 1 39 47 02 28 frances ales @ s , 4542 Luterbach T +41 32 6816 626 F +41 32 6816 641 s ales @ s chaffner.ch Japan Schaffner EMC K.K , Lamphun T +66 53 58 11 04 F +66 53 58 10 19 thailands ales @ s chaffner.com Finland Schaffner Oy , . Via Galileo Galilei 47 20092 Cinis ello Bals amo (MI) T +39 02 66 04 30 45/47 F +39 02 61 23 943 , Ubi Indus trial Es tate 408705 Singapore T +65 6377 3283 F +65 6377 3281 s ingapores ales @ s


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PDF 100kHz 4000VAC, 1500VAC, 250VAC C/230V Mil-HB-217F)
NEA02

Abstract: No abstract text available
Text: r i : n 1 8 PRODUCT NUMBER b O' u, £ EJ Sì 8 -« * ?j. a i f s 3! d Í ^ c Z I I , ?I £ > > n · P 5* B C 0 E F s *· · o î ? î E Ï i V61152 K60070 V70752 V71571 , -X02 1 ! S ' D E I E lE l PI liH n n n iiliB 02 ESESEDE9 02 [iHliHlillf ia 02 BHIiHliHPB 02 Q B E BE , BEI PH 01 [nuMUMfin 01 m m m n n 01 EDESEBEH 01 01 m t & m m 02 E S E a iE iE a 02 m m m m 02 5 3 S 3 , i %a S · c 5 * £ 5 · · i a · j. 72018-X04 72018-X05 I ! ! ! *, c o s § ! f s


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2000 - s818

Abstract: S-818 SOT CL2 cl2f
Text: 1 0.17 0.20 V 1 VOUT( S )+0.5 VVIN10 V, IOUT=30 mA 0.05 0.2 %/V 1 VOUT( S )+0.5 VVIN10 V, IOUT=10 A 0.05 0.2 %/V 1 VIN=VOUT( S )+1 V, 10 AIOUT80 mA 30 , VIN=VOUT( S )+1 V, VON/OFF=0 V -0.1 0.1 A 4 RR VIN=VOUT( S )+1 V, f =100 Hz, Vrip=0.5 V , ON/OFF VSS 9 9 CMOS S -818 Rev.3.0_00 CIN CL ESR RIN 0.47 F , -818VOUT-VSS OS 2 F 2 FESR 10 ESR CL 13 CMOS S -818 Rev.3.0_00 · VIN VOUT


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PDF S-818 S-818 OT-23-5 OT-89-5 s818 SOT CL2 cl2f
2012 - Not Available

Abstract: No abstract text available
Text: 1 34 34 30 60 F +33 1 39 47 02 28 frances ales @ s chaffner.com Schaffner Group Nordstrasse 11 , 20092 Cinis ello Bals amo (MI) T +39 02 66 04 30 45/47 F +39 02 61 23 943 italys ales @ s chaffner.com , Pudong New Area 201201 Shanghai T +86 21 3813 9500 F F +86 21 3813 9501 / 02 cs china@s chaffner.com , www.schaffner.com Switzerland Schaffner EMV AG Nords tras s e 11 4542 Luterbach T +41 32 6816 626 F +41 32 , ui-s eimei Sangenjaya Bldg. 154-0011 Tokyo T +81 3 5712 3650 F +81 3 5712 3651 japans ales @ s


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PDF 100kHz 4000VAC, 1500VAC, 250VAC C/230V Mil-HB-217F)
zo 107 triac

Abstract: 06015L5 triac zo 107 Q7004L4 Q4004L3 Q7008L5 Q800414 04015r5 QS015LS Q7015L5
Text: r E le c tro n ic s a re pa rt o f a b r o a d lin e o f b id ir e c tio n a l s e m ic o n d u c to r s . T h e d e v ic e s r a n g e in c u r r e n t r a t i n g s f r o m 1 t o 2 5 a m p e r e s a n d in v o l t a g e s f r o m 2 0 0 to 8 0 0 v o lts . T h e t r i a c m a y b e g a t e t r i g g e r e d f r o m a b l o c k i n g to c o n d u c t io n s t a t e f o r e i t h e r p o l a r i t y o f a p p l i e d v o l t a g e a n d is d e s ig n e d fo r A C s w itch in g an d p h a s e co


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SMA-5121

Abstract: A5323 SMA-5225-15-SLT-02
Text: SM A-5520-15-SLT- 02 * SMA-5521 -15-SLT- 02 * SMA-5522-15-SLT- 02 * SMA-5523-15-SLT- 02 * S lo t W id th In ch es (mm) F la n g e S ize Sq u are In c h e s |m m i M o d el N u m b e r SM A-5620-15-SLT- 02 S lo t W id th In ch es (m m | F la n g e S iz e S q u a re In c h e s (mm) .012 .018 .028 , F la n g e S ize S q u a re In c h e s (mm) M od el N u m b e r SM A-5620-14-SLT- 02 I SMA-5621-14-SLT- 02 , contact, change 4th digit o f Model No. from "5" to "6H . Example: SMA-6320-14-SLT- 02 . Captured Center


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PDF SMA-5225-15-SLT-02. SMA-6320-15-SLT-02 -5320-15-SLT-02 SMA-5321-15-SLT-02 -5322-15-SLT -5323-15-SLT -5520-15-SLT-02* SMA-5521 -15-SLT-014-SLT-02* -5620-14-SLT-02 SMA-5121 A5323 SMA-5225-15-SLT-02
sx3704

Abstract: AP239 Transistor 80139 8C547 2N50B IN2222A 6C131C radio AC176 AC126 sft353 2N2064
Text: 40149 40148 40149/01 40149/ 02 AD149IV G 9 A T . PH, 8, TF G G G 9 9 9 A T, PH, 6, T F G 9 A T , TF G 9 TF G N PH. S . T F . V A0136 416217 A0136 A0136V A0166 410162 410162 410162V 0016 2V 1 , IN, IT. ST G G s 2N2836 A0162V II 88888 410263 410Y22 ADY22 AO I'M ADY23 PH, S . T F . V A0148 , MU. I*H. V. S AFT14N AF115 A F ttS AF11S AF11SN G G P MN P MU, PH. V. S G P AF110 A F ttS AF116 , 8 8 88 8 8888 8 S888 8 F P PH, MU. V A D Z t2 A0Z12 A0Z12 A0 1 0 3 A0Z12 |8S888 8 8 88 8 S S 8 S


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L601es

Abstract: L2004L6
Text: 1.6 1. f 0 0.2 0.4 RMS 0.6 0.8 1.0 [ l-|-< R M S )l 1.2 1.4 1.6 RMS On*State , line o f lo g ic t r ia c s in c lu d e s d e v ic e s w ith c u r re n t c a p a b ilitie s t h r o u , u rth q u a d r a n t s as w e ll as c o n tro l in th e c o m m o n ly use d f ir s t an d th ird q u a d rants. F o u r - q u a d r a n t co n tro l d e v ic e s fo rm a g ro u p te r m e d " lo gic , im a r y p u rp o s e is f o r A C s w itc h in g and p h a s e c o n tro l a p p l i c a tio n s s u


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PDF -202AB -220AB L601es L2004L6
2012 - Not Available

Abstract: No abstract text available
Text: 1 34 34 30 60 F +33 1 39 47 02 28 frances ales @ s chaffner.com Schaffner Group Nordstrasse 11 , 20092 Cinis ello Bals amo (MI) T +39 02 66 04 30 45/47 F +39 02 61 23 943 italys ales @ s chaffner.com , Pudong New Area 201201 Shanghai T +86 21 3813 9500 F F +86 21 3813 9501 / 02 cs china@s chaffner.com , www.schaffner.com Switzerland Schaffner EMV AG Nords tras s e 11 4542 Luterbach T +41 32 6816 626 F +41 32 , ui-s eimei Sangenjaya Bldg. 154-0011 Tokyo T +81 3 5712 3650 F +81 3 5712 3651 japans ales @ s


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PDF 100kHz 4000VAC, 1500VAC, 250VAC C/230V Mil-HB-217F)
2003 - H1052

Abstract: D1060 H1106 TLYH27T H1050 F1100C transistor D1060 K1109 TLRV1022 led tlyh 1100b
Text: 4761,290 E 0.852.3 S RA JA 8502,300 SA KA F 1.534.14 T 1,5304,140 , ) 613 623 1 50 5-2 850 3200 S /T/U TLRMH17TP( F ) 626 636 1 50 5-2 850 2000 S /T/U TLRH17TP( F ) 630 644 1 50 5-2 850 1900 S /T/U TLSH16TP( F ) 613 623 1 50 5-3 476 1500 R/ S /T TLRMH16TP( F ) 626 636 1 50 1300 R/ S /T TLSH30TP( F ) 613 623 1 50


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PDF LEDTL12W03 K1109 F1100C M1050 M1052 BCJ0006L BCJ0006K H1052 D1060 H1106 TLYH27T H1050 F1100C transistor D1060 K1109 TLRV1022 led tlyh 1100b
2014 - Not Available

Abstract: No abstract text available
Text: 5%, G = 2%, F = 1% Power Rating Code: 1/8W = B, 1/4W = A, 1/2W = S , 1W = C, 1.5W = D, 2W = E Case , (C) 1/4W (A), 1/2W ( S ), 1W (C) 1/4W (A), 1/2W ( S ), 1W (C) Available Tolerance ±1% ( F ),  , ± 0.2 0.84 ± 0.1 4.0 ± 0.1 1206 2.0 ± 0.15 3.6 ± 0.2 0.84 ± 0.1 4.0 ± 0.1 F , 0.85 ± 0.15 2512 3.6 + 02 F D0 D1 W Quantity per Reel 4.0 ± 0.05 4.0 ± 0.1 , Mn-Cu 1/4W (A) 1/2W ( S ) 1/4W (A) NCSS12 1206 Mn-Cu 1/2W ( S ) 1W (C) 1/2W ( S ) NCSS20


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PDF 100ppm 200ppm 75ppm
2006 - s1206B33-u3

Abstract: s-1206b33-m3t1x S-1206B12-M3T1 S-1206B33-M3t1 S-1206B26-M3T1 S-1206B32 S-1206B30-M3T1 s-1206b21-m3t S-1206B33 S1206B33M3T1
Text: output current developed based on CMOS technology. I/O capacitors are as small as 0.1 F . S -1206 Series , 0.2 40 %/V mV 1 1 VIN = VOUT( S ) + 1.0 V, IOUT = 30 mA, -40°C Ta 85°C - ±120 - , 1.5 1.0 0.5 3.3 V 4.0 V VOUT [V] S -1206B12 1.4 1.2 1.0 0.8 0.6 0.4 0.2 100 0 , 0.6 0.4 0.2 0 25°C -40°C S -1206B50 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 , ] 0 -40 -25 S -1206B30 1.4 1.2 1.0 0.8 0.6 0.4 0.2 50 75 85 0 -40 -25 0 25 Ta


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PDF S-1206 OT-23-3, OT-89-3, s1206B33-u3 s-1206b33-m3t1x S-1206B12-M3T1 S-1206B33-M3t1 S-1206B26-M3T1 S-1206B32 S-1206B30-M3T1 s-1206b21-m3t S-1206B33 S1206B33M3T1
1999 - S-814

Abstract: s814-p
Text: VIN=VOUT( S )+1 V, IOUT=30 mA, CL=1 F , ON/OFF=0VOUT( S )+1V 5V 0.8 0.6 0.4 0.2 3V VOUT=2 V 0 , =30 mA 1.4 5V 1.2 1.0 3V 0.8 0.6 0.4 VOUT=2 V 0.2 0 0.1 1 10 100 CL [ F ] CMOS S , 0.2 VIN=VOUT( S )+2 VVOUT( S )+1 V, IOUT=30 mA, CL=1 F 1.0 3V 5V 0.8 Undershoot [V] Undershoot , VIN · VOUT VOUT( S )+0.5 VVIN10 V, IOUT=30 mA 0.05 0.2 %/V 1 2 VOUT 2 VIN · VOUT VOUT( S )+0.5 VVIN10 V, IOUT=10 A 0.05 0.2 %/V 1 VIN=VOUT( S )+1 V, 10 AIOUT80


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PDF S-814 S-814CMOS OT-23-5 OT-89-5 S-814 s814-p
jjd-50

Abstract: 20T03 ITO-3P
Text: . 5 4 -4 ® : B © : C ® : E F ig. 5 4 -5 ® : G ® : D ® : S ( » 3.6 02 10.4 - 0.2 4.6 ; o 2 , ig . 5 6 - 2 , 3. 3 ; o 3 F ig. 5 6 -4 ® ® ® G D S 5.45 ' 02 0.7 oz ® © ® ^ , -4 G ® D ® : S Fig. 63 © fl , F ig . 6 3 - I ® : (D : ® : + C i): 2.5 ± 0 2 4 . 7 1 0.2 7 MAX , 1 2 6 5 ±2 1 1 2 6 .5 ±2 . s © 27.5^2 27 5 * 2 . f 1 . i i62 , .7 ± 0.2 0 .7 to .i Fig. 24 Fig. 25 © F ig . 2 5 - 1 © : + © © © © 5 ± 0.2 5


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PDF 20t03 jjd-50 20T03 ITO-3P
1999 - Not Available

Abstract: No abstract text available
Text: /GXB Series:GXB s : 105°C 5000 h GNH 20~30% GUP 1.5 -25 to + 105°C 350 to 450 V .DC 2200 to 15000 µ F Japan s , °C ( ) , ( ) 5000 , ± 20% 200% +105±2°C 1000 V 2000V.AC1 s mm M5x12 (mm) D±1 F ±1.0 D 64 77 90 F 28.6 31.8 31.8 L+4 max 9 max s , 86.0 77 89.0 100.0 90 101.6 113.0 W1 W2 8.0 13.0 8.0 14.0 8.0 14.0 Ñ EE194 Ñ /GXB s


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PDF 120Hz/ M5x12 EEGXB2G822J( EEGXB2G103J( EEGXB2G123J( EEGXB2W222G( EEGXB2W222H( EEGXB2W272G( EEGXB2W272H( EEGXB2W272J(
EE19

Abstract: df 318 EE195
Text: L+4 max 77 90 F 28.6 31.8 31.8 9 max s Mounting clamp 120° (mm) D 64 77 , EEGXB2V272G( ) N F 31.8 EEGXB2V272H( ) N F 0.2 28.6 EEGXB2V332G( ) N F 0.2 31.8 EEGXB2V332H( ) N F 17.2 0.2 28.6 EEGXB2V392G( ) N F 17.1 0.2 31.8 EEGXB2V392H( ) N F 72 16.9 0.2 31.8 EEGXB2V392J( ) N F 125 20.0 0.2 28.6 EEGXB2V472G( ) N F 97 19.8 0.2 31.8 EEGXB2V472H( ) N


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PDF 120Hz/ EEGXB2W472J( EEGXB2W562H( EEGXB2W562J( EEGXB2W682J( EEGXB2W822J( EEGXB2W103J( EE196 EE19 df 318 EE195
Not Available

Abstract: No abstract text available
Text: ated R ated R M S R|_=60 o h m s (5)(8) c o n d u c tio n F o rw a rd & R|_=60 o h m s V alue C urrent a n g le o f R everse 36 0° V oltag e MT2 (4) (14) T L , f \ 11. T l = T j fo r te s t con ditions in off-state. (-) I G T GATE 12. Pulse width < 10 , V AW JL ^ T f 4 M MT1 ~ 1 MT1 R q j L (T ypical) °C /W REF 0 .8 A D e v ic e s 1 , ) dv/dt di/dt A v e ra g e P eak O ne C ycle S urge C ritical R a te -o f-R ise o f C o m


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Not Available

Abstract: No abstract text available
Text: ^tt/R esistance to soldering heat ^ ft/ S o ld e rin g condition 7 □ - / F lo w : 240°C 5s m ax , , J IS C 5 1 0 2 *+ 1 0 5 'C '£ t!A T ffifflC D lt£ P 1 7 4 , 0 -2 lL ;rj\ f I t f f lJ S S t T - , P art No. c a p (,u F ) A a b 4.0 1.4 0.2 5.2 1.3 0.2 3.9 1.5 , 1.4 0.2 2.5 5.7 4.2 R F B 123 0 * R FB 153 0.012 0 .015 c c R FB 183 â , 0* C 5.7 □ R F B 473 0 * B 2.5 5.2 R FB 393 A 0.2 0.01 0* 0


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PDF 14fg-iSff
2006 - Not Available

Abstract: No abstract text available
Text: F 2.2 -0.4 - 0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t [ms] S -1206B50 VIN = 6.0 V, IOUT = 1 40 mA , output current developed based on CMOS technology. I/O capacitors are as small as 0.1 F . S -1206 Series , Current (Ta = 25°C) S -1206B12 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VOUT [V] 1.5 V 1.7 V 0 VOUT [V] VIN , 0.6 0.4 0.2 0 ISS1 [A] ISS1 [A] Ta = 85°C 25°C -40°C 0 1 2 3 4 VIN [V] 5 6 7 S , S -1206B50 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ISS1 [A] Ta = 85°C 25°C -40°C 0 1 2


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PDF S-1206 OT-23-3, OT-89-3,
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