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RF MESFET S parameters

Abstract: TQTRX
Text: ) -1 . Gmax (dB) 26.0 Vds = 1.5V @ 1.1GH z Vds = 1.5V @ 2.2GH z Vds = 1.5V @ 5.8GH z , @ 5.8GH z Vds = 3.0V @ 7.9GH z Vds = 3.0V @ 12.1GHz 30 0. -1 . DFET Gmax vs Vgs vs , V ds + 1.5V @ 2.2GH z V ds + 1.5V @ 5.8GH z V ds = 1.5V @ 7.9GH z V ds = 1.5V @ 12.1GH z V ds = 3.0V @ 1.1GH z V ds = 3.0V @ 2.2GH z V ds = 3.0V @ 5.8GH z V ds = 3.0V @ 7.9GH z V ds =


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Not Available

Abstract: No abstract text available
Text: R EV EDIQÁO INICIAL NOVO CÓDIGO -5Q.10 Hr 0 .8 5 - diP s ECN. NO. A B -laomiQ . APP DATE Unit: mm; Tolerances: ±0.15 mm Reference dimension fo r PCB layout -54j.Qtl.Pn o c 4W 0,25-o‘is HOW TO ORDER: ICA6088C[ ]R 1 5. E n v iro n m e n ta l C h a ra c te ris tic s TEC H N IC A L C H A R A C TER IST IC S 3. E le c tric a l C h a ra c te ris tic s 1. G e n e ra l C h a ra c te ris tic s Dim ension: 55.50L x 40.00W x 5.8GH mm W eight: Approx. 10 50 g


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PDF ICA6088C[ A6088C 2002i95/EC
2007 - MT4S200U

Abstract: 60GHz transistor 60Ghz
Text: Collector-Base voltage VCB (V) 20.0 15.0 5.8GH Ga 0.0 0.1 5.8GHz NF 10 Associated Gain Ga , Noise Amplifier Application Unit: mm FEATURES · Low Noise Figure :NF=1.7dB (@f= 5.8GHz ) · High Gain:|S21e|2=9.5dB (@f= 5.8GHz ) Marking 4 3 P 1 USQ 2 1.Collector 2 , GHz 15.0 17.5 dB 2 VCE=3V, IC=15mA, f= 5.8GHz 9.5 dB VCE=3V, IC , ) Insertion Gain VCE=3V, IC=5mA, f= 5.8GHz 1.7 dB Min Typ. Max Unit 1


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PDF MT4S200U MT4S200U 60GHz transistor 60Ghz
2006 - Not Available

Abstract: No abstract text available
Text: Noise Figure :NF=1.7dB (@f= 5.8GHz ) High Gain:|S21e|2=9.5dB (@f= 5.8GHz ) 2.0±0.2 1.3±0.1 3 4 , =2GHz VCE=3V, IC=15mA, f= 5.8GHz VCE=3V, IC=5mA, f=2GHz VCE=3V, IC=5mA, f= 5.8GHz Min 25 15.0 Typ. 30 , |2-IC 5.8GHz 12 35 Collector-current IC(mA) fT-IC Transition Frequency fT(GHz) 10 30 25 20 15 10 5 0 1 10 VCE=3V Ta=25 100 Insertion Gain |S21e|2(dB) 8 6 4 2 0 1 10 VCE=3v f= 5.8GHz , 5.8GHz 20.0 NF 15.0 2GHz NF 10.0 5.0 VCE=3v Ta=25 1 10 0.0 100 Output Capacitance Cob(pF) 0.35


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PDF MT4S200U
2006 - MT4S200U

Abstract: No abstract text available
Text: Noise Amplifier Application Unit: mm FEATURES · · Low Noise Figure :NF=1.7dB (@f= 5.8GHz ) High Gain:|S21e|2=9.5dB (@f= 5.8GHz ) Marking 4 3 P USQ JEDEC JEITA 1 2 1.Collector 2.Emitter 3 , =2GHz VCE=3V, IC=15mA, f= 5.8GHz VCE=3V, IC=5mA, f=2GHz VCE=3V, IC=5mA, f= 5.8GHz Min 15.0 Typ. 30 , |2-IC 5.8GHz 12 35 Collector-current IC(mA) fT-IC Transition Frequency fT(GHz) 10 30 25 20 15 10 5 0 1 10 VCE=3V Ta=25 100 Insertion Gain |S21e|2(dB) 8 6 4 2 0 1 10 VCE=3v f= 5.8GHz


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PDF MT4S200U 50ohm 001GHz 801GHz MT4S200U
2007 - Not Available

Abstract: No abstract text available
Text: Noise Amplifier Application Unit: mm FEATURES · · Low Noise Figure :NF=1.7dB (@f= 5.8GHz ) High Gain:|S21e|2=9.5dB (@f= 5.8GHz ) Marking 4 3 P 2 USQ JEDEC JEITA 1 2 1.Collector 2 , =2GHz VCE=3V, IC=15mA, f= 5.8GHz VCE=3V, IC=5mA, f=2GHz VCE=3V, IC=5mA, f= 5.8GHz Min 15.0 Typ. 30 , ) |S21e|2-IC 5.8GHz 12 35 Collector-current IC(mA) fT-IC Transition Frequency fT(GHz) 10 30 25 20 15 10 5 0 1 10 VCE=3V Ta=25 100 Insertion Gain |S21e|2(dB) 8 6 4 2 0 1 10 VCE=3v f= 5.8GHz


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PDF MT4S200U
2005 - Not Available

Abstract: No abstract text available
Text: Noise Amplifier Application Unit:mm FEATURES · · Low Noise Figure :NF=1.7dB (@f= 5.8GHz ) High Gain:|S21e|2=9.5dB (@f= 5.8GHz ) 2.0±0.2 1.3±0.1 2.1±0.1 1.25±0.1 0.2+0.1 ­0.05 0.15±0.05 3 Marking , =15mA,f=2GHz VCE=3V, IC=15mA, f= 5.8GHz VCE=3V, IC=5mA, f=2GHz VCE=3V, IC=5mA, f= 5.8GHz Min 25 15.0 , Gain |S21e|2(dB) 10 8 6 4 2 0 1 10 VCE=3v 30 25 20 15 10 5 0 1 10 f=2GHz Ta=25 100 f= 5.8GHz Ta , 5.8GHz 20.0 NF 15.0 2GHz NF 10.0 5.0 VCE=3v Ta=25 1 10 0.0 100 Output Capacitance Cob(pF) 0.35


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PDF MT4S200U
2009 - Not Available

Abstract: No abstract text available
Text: Noise Amplifier Application Features · · Low Noise Figure :NF=1.7dB (@f= 5.8GHz ) High Gain:|S21e|2=9.5dB (@f= 5.8GHz ) Unit: mm Marking 4 3 P 2 USQ 1 2 1.Collector 2.Emitter 3.Base 4 , =2GHz VCE=3V, IC=15mA, f= 5.8GHz VCE=3V, IC=5mA, f=2GHz VCE=3V, IC=5mA, f= 5.8GHz Min 15.0 Typ. 30 , ) |S21e|2-IC 5.8GHz 12 35 Collector-current IC(mA) fT-IC Transition Frequency fT(GHz) 10 30 25 20 15 10 5 0 1 10 VCE=3V Ta=25 100 Insertion Gain |S21e|2(dB) 8 6 4 2 0 1 10 VCE=3v f= 5.8GHz


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PDF MT4S200U
2006 - FPD6836P70

Abstract: No abstract text available
Text: Matching® Applied ̈ 22dBm Output Power (P1dB) 15dB Gain at 5.8GHz 0.8dB Noise Figure at 5.8GHz 32dB Output IP3 at 5.8GHz 45% Power-Added Efficiency at 5.8GHz Usable Gain to 18GHz GaAs HBT , ) WLAN 802.11a ( 5.8GHz ) Point-to-Point Radio (to 18GHz) InP HBT RF MEMS LDMOS Parameter Min , specification measured at f= 5.8GHz using CW signal (except as noted). RF MICRO DEVICES®, RFMD®, Optimum , Power Transfer Characteristics VDS = 5V IDS = 55mA at f = 5.8GHz , 70.0% 4.00 70.0% 23.0


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PDF FPD6836P70 FPD6836P70 22dBm 18GHz FPD6836P70-AG FPD6836P70-AJ FPD6836P70SQ
2006 - FPD6836P70

Abstract: FPD6836P70SQ FPD6836P70SR LL1005FHL 36P7 w50 MARKING CODE 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
Text: ) optimised for low-noise, high-frequency applications. 22dBm Output Power (P1dB) 15dB Gain at 5.8GHz 0.8dB Noise Figure at 5.8GHz 32dB Output IP3 at 5.8GHz 45% Power-Added Efficiency at 5.8GHz Usable , HBT Gain blocks and medium power stages WiMax (2GHz to 11GHz) WLAN 802.11a ( 5.8GHz , /W *Note: TAMBIENT =22°C, RF specification measured at f= 5.8GHz using CW signal (except as noted). , VDS = 5V IDS = 55mA at f = 5.8GHz , Drain Efficien and PAE cy 70.0% 4.00 70.0% 23.0


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PDF FPD6836P70 FPD6836P70 22dBm 18GHz 11GHz) 18GHz) FPD6836P70-AG FPD6836P70-AJ FPD6836P70SQ FPD6836P70SR LL1005FHL 36P7 w50 MARKING CODE 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
Not Available

Abstract: No abstract text available
Text: 18.1 ⎯ dB VCE=3V, IC=15mA,f= 5.8GHz 9.5 11.5 ⎯ dB VCE=3V, IC=7mA, f , ) Insertion Gain VCE=3V, IC=7mA,f= 5.8GH ⎯ 1.51 ⎯ dB Min Typ. Max Unit â


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PDF MT4S301U
2006 - Not Available

Abstract: No abstract text available
Text: ML5805 ML5805 5.8GHz Variable Data Rate FSK Transceiver with Integrated PA 5.8GHZ VARIABLE , Subsystem IF Subsystem DATASEL F To V RXIN, RXIP 5.8GHz Input SI GN S  Low-IF , 5.8GHz +21dBm Output Fractional-N Synthesizer with 30Hz Resolution TX Subsystem Fully , Subsystem /2  RSSI RSSI Quadrature Generation Highly Integrated 5.8GHz FSK , TX output power at 5.8GHz 5.850 GHz 21 Matched into 50 ±400 Transmit Modulation


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PDF ML5805 21dBm 048Mbps) DS120607 MO-220
2006 - PN20

Abstract: Mixer 5.8GHz ML5805 5.8GHz Analog RF modulator 5.8ghz pa dsss FSK modulation design 58GHz circuit diagram of bluetooth fm transmitter V1.2 822UA
Text: ML5805 ML5805 5.8GHz Variable Data Rate FSK Transceiver with Integrated PA 5.8GHZ VARIABLE , DATASEL F To V RXIN, RXIP 5.8GHz Input DOUT AOUT Filter Alignment Features Low-IF , Regulation and Power Distribution/ Management TXO 5.8GHz +21dBm Output TX Subsystem -97dBm , RSSI Quadrature Generation Highly Integrated 5.8GHz FSK Transceiver With Selectable Data Rates , TX output power at 5.8GHz 5.850 GHz 21 Matched into 50 ±400 Transmit Modulation


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PDF ML5805 21dBm -97dBm 21dBm DS090320 MO-220 40-Pin PN20 Mixer 5.8GHz ML5805 5.8GHz Analog RF modulator 5.8ghz pa dsss FSK modulation design 58GHz circuit diagram of bluetooth fm transmitter V1.2 822UA
2006 - 0x857E

Abstract: s5850
Text: ML5805 5.8GHz Variable Data Rate FSK Transceiver with Integrated PA ML5805 5.8GHZ VARIABLE DATA , Subsystem RXIN, RXIP 5.8GHz Input IF Subsystem DATASEL F To V Filter Alignment Quadrature Generation RSSI , Synthesizer Subsystem Pulse Shaping 3.9 GHz VCO /2 PLL Divider PFD VTUNE QPO Highly Integrated 5.8GHz FSK , TXO 5.8GHz +21dBm Output TX Subsystem SW_CTRL RXCLK Registers and Mode Control RXON XCEN DATA CLK , output power at 5.8GHz Transmit Modulation Deviation Output Impedance Transmit Filter Bandwidth/Symbol


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PDF ML5805 ML5805 576kbps, 125Mbps, 536Mbps, 75Mbps, 048Mbps 536Mbps DS120607 0x857E s5850
2001 - 5100 B3 transmitter

Abstract: 500-SERIES MAX2648 MAX2648EBT
Text: predriver or an LO buffer. The device has been fully characterized and tested in the 5.2GHz and 5.8GHz


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PDF 25GHz MAX2648 MAX2648EBT MAX2648 5100 B3 transmitter 500-SERIES MAX2648EBT
5.5 GHz power amplifier

Abstract: HMC223MS8 HMC224MS8 HMC280MS8G
Text: ideal for use in the UNII & ISM bands at 5.2GHz and 5.8GHz . External component requirements are


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PDF HMC280MS8G HMC280MS8G fixt8-250-3373 5.5 GHz power amplifier HMC223MS8 HMC224MS8
2007 - b 857 W3

Abstract: fpd200p70 transistor marking code 1325 18GHZ filtronic Solid State TL11 TL22 VG07
Text: Doublers TYPICAL PERFORMANCE: RF PARAMETER SYMBOL CONDITIONS 1.85GHZ 5.8GHZ 18GHZ , at f = 5.8GHz Power Transfer Characteristics VDS = 5V, IDS = 30mA at f = 5.8GHz 60.0% 5.50 , 11 Input Power (dBm) Typical Intermodulation Performance VDS = 5V, IDS = 30mA at f = 5.8GHz , IDS = 30mA at f = 5.8GHz FPD200P70 IP3 Variation over Tempe rature VDS = 5.0V IDS = 30mA at f = 5.8GHz 19.00 18.00 28.00 18.00 19.00 27.00 15.00 14.00 16.00 13.00 12.00


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PDF FPD200P70 FPD200P70 26GHz 85GHZ 18GHZ b 857 W3 transistor marking code 1325 18GHZ filtronic Solid State TL11 TL22 VG07
2006 - MRD 532

Abstract: video transmitter 2.4 GHz JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K 5805
Text: ~ 5.8GHz GVAR Gain variation over band (4.9-5.8 MHz) 5.0 dB Gain variation over band


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PDF SST13LP02 SST13LP022 S71304-01-000 MRD 532 video transmitter 2.4 GHz JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K 5805
2009 - Not Available

Abstract: No abstract text available
Text: / Hz) 160 100MHz 900MHz 1.9GHz 2.14GHz 5.8GHz 3.8GHz 2.6GHz 140 120 100 80 60


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PDF AD8363 indepe8363ACPZ-R7 AD8363ACPZ-WP AD8363-EVALZ 16-Lead CP-16-10
2010 - XM0860SH-DL0601

Abstract: XM0860SH
Text: Frequency Insertion Loss Conditions Either State 0.9GHz 2.4GHz 5.8GHz 0.9GHz ISO Pin 0.1dB Isolation (Port1or3 ­ Port2) Input Power for 0.1dB Compression 2.4GHz 5.8GHz 0.9GHz Min. 0.8 20.0 19.5 11.5 20.0 Typ


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PDF XM0860SH-DL0601 DS0860SH-01A XM0860SH-DL0601 XM0860SH
EC-ECJ007-0208

Abstract: No abstract text available
Text: EC-ECJ007-0208 JA 418GHz 1.52.0 MPa 0.71.0 MPa 6575 1.02.0×10-4 http://www.fdk.co.jp EC-ECJ007-0208 0 10 dB 20 30 JA4 40 50 JA6 JA7 JA9 JA12 JA14 JA18 0 5 10 15 GHz 20 25 JA4 JA6 JA7 JA9 JA12 JA14 JA18 4GHz 5.8GHz 7.5GHz 9GHz 12GHz 14GHz 18GHz 20dB 3.74.3GHz 5.46.5GHz 7.08.2GHz 8.39.7GHz 11.213.2GHz 13.215.3GHz 17.119.5GHz 100×100×2.0mm 100×100×2.0mm 100×100×1.65mm 100×100×1.6mm 100×100×1.5mm 100×100×1.4mm


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PDF EC-ECJ007-0208 418GHz 12GHz 14GHz 18GHz EC-ECJ007-0208
Antenna 5.8ghz

Abstract: dsrc DAT Series
Text: 5.8GHz DIELECTRIC ANTENNA FOR ETC AND DSRC ETC/DSRC DAT Series DAT Series is a circular polarized miniature dielectric antenna of 5.8GHz band for DSRC (Dedicated Short Range Communication) and ETC (Electronic Toll Collection System). This antenna has the good sensitivity by the broad-band and the low-ripple suitable for high speed and mass transmission. ETCDSRC5.8GHz DIMENSIONS Unit : mm , -R0.5 5.8GHz DIELECTRIC ANTENNA FOR ETC AND DSRC ETC/DSRC DAT Series Electrical Characteristics


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PDF 5820MHz 77GHz 82GHz 87GHz 100MHz/div 32GHz Antenna 5.8ghz dsrc DAT Series
Not Available

Abstract: No abstract text available
Text: LO = 30GHz P LO = +10dBm IF = 2,0GHz (RF = 58GHz ) Up-Conversion Sup. compression with external


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PDF CHM1298 55-65GHz CHM1298 DSCHM12989096
2008 - ofdm transceiver 900mhz

Abstract: Decibel Products omni-directional antennas circular connector 2.4 GHz dipole antenna zigbee w1038
Text: Length: 5.90 m Quiet Zone Size - 78cm @ 0.9GHz - 55cm @ 1.8GHz - 48cm @ 2.4GHz - 31cm @ 5.8GHz - 17cm


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PDF 112th ofdm transceiver 900mhz Decibel Products omni-directional antennas circular connector 2.4 GHz dipole antenna zigbee w1038
2010 - schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: No file text available


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PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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