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SN54AS576W Texas Instruments AS SERIES, 8-BIT DRIVER, INVERTED OUTPUT, CDFP20, CERAMIC, FP-20
LM2576WUTR Microchip Technology Inc 7.5A SWITCHING REGULATOR, 63kHz SWITCHING FREQ-MAX, PSSO5, ROHS COMPLIANT, TO-263, 5 PIN
LM2576WU-TR Microchip Technology Inc 7.5A SWITCHING REGULATOR, 63kHz SWITCHING FREQ-MAX, PSSO5
MIC4576WT Microchip Technology Inc 8.5A SWITCHING REGULATOR, 220kHz SWITCHING FREQ-MAX, PSFM5
MIC4576WUTR Microchip Technology Inc 8.5A SWITCHING REGULATOR, 220kHz SWITCHING FREQ-MAX, PSSO5, ROHS COMPLIANT, TO-263, 5 PIN
MIC4576WU Microchip Technology Inc 8.5A SWITCHING REGULATOR, 220kHz SWITCHING FREQ-MAX, PSSO5
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97-VRAP-0576W Kroy Allied Electronics & Automation - $40.81 $34.99
C-8576-WIR-TR Keystone Electronics Corp Bristol Electronics 22,050 $0.38 $0.05
LM2576WT Microchip Technology Inc Avnet - $0.96 $0.86
LM2576WT Microchip Technology Inc Farnell element14 341 £1.38 £1.03
LM2576WT Microchip Technology Inc Newark element14 341 $1.93 $1.51
LM2576WT Microchip Technology Inc Chip1Stop 132 $1.34 $1.17
LM2576WT Microchip Technology Inc TME Electronic Components 200 $1.67 $1.08
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LM2576WT Microchip Technology Inc element14 Asia-Pacific 341 $1.95 $1.58
LM2576WT Microchip Technology Inc Rochester Electronics 13,206 $1.29 $1.04
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LM2576WU Microchip Technology Inc microchipDIRECT 470 $1.87 $1.18
LM2576WU Microchip Technology Inc element14 Asia-Pacific 439 $3.56 $2.40
LM2576WU Microchip Technology Inc Rochester Electronics 18,160 $1.36 $1.10
LM2576WU Microchip Technology Inc Future Electronics - $1.39 $1.15
LM2576WU Microchip Technology Inc Newark element14 439 $2.23 $1.75
LM2576WU Microchip Technology Inc Avnet - $1.01 $0.90
LM2576WU Microchip Technology Inc TME Electronic Components 671 $1.64 $1.03
LM2576WU Microchip Technology Inc Avnet - €0.87 €0.84
LM2576WU-TR Microchip Technology Inc element14 Asia-Pacific 148 $2.03 $1.71
LM2576WU-TR Microchip Technology Inc RS Components 345 £1.52 £1.10
LM2576WU-TR Microchip Technology Inc Farnell element14 148 £1.46 £1.10
LM2576WU-TR Microchip Technology Inc Newark element14 148 $2.45 $1.68
LM2576WU-TR Microchip Technology Inc Future Electronics - $1.39 $1.39
M85049/25-76W Amphenol PCD Heilind Electronics - Asia - - -
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M85049/25-76W Glenair Inc Powell Electronics 15 $517.20 $276.64
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M85049/25-76W Amphenol PCD Heilind Electronics - - -
MIC4576WT Microchip Technology Inc Chip1Stop 195 $2.31 $1.70
MIC4576WT Microchip Technology Inc Chip1Stop 35 $4.96 $3.21
MIC4576WT Microchip Technology Inc Chip1Stop 3 $2.31 $2.31
MIC4576WT Microchip Technology Inc RS Components 86 £2.48 £1.76
MIC4576WT Microchip Technology Inc Schukat electronic 245 €2.38 €1.52
MIC4576WT Microchip Technology Inc Master Electronics 125 $2.59 $1.49
MIC4576WT Microchip Technology Inc microchipDIRECT 493 $2.98 $1.88
MIC4576WT Microchip Technology Inc New Advantage Corporation 12,246 $4.38 $3.98
MIC4576WT Microchip Technology Inc element14 Asia-Pacific 182 $4.82 $3.66
MIC4576WT Microchip Technology Inc Farnell element14 186 £2.70 £1.81
MIC4576WT Microchip Technology Inc Newark element14 182 $2.85 $2.42
MIC4576WT Microchip Technology Inc TME Electronic Components 255 $2.66 $1.73
MIC4576WU Microchip Technology Inc microchipDIRECT - $4.14 $2.62
MIC4576WU Microchip Technology Inc element14 Asia-Pacific 29 $6.75 $5.12
MIC4576WU Microchip Technology Inc Newark element14 29 $4.41 $3.48
MIC4576WU Microchip Technology Inc New Advantage Corporation 1,012 $6.98 $6.35
MIC4576WU Microchip Technology Inc Master Electronics 100 $3.59 $2.07
MIC4576WU Microchip Technology Inc Farnell element14 29 £3.23 £2.45
MIC4576WU-TR Microchip Technology Inc Farnell element14 - £3.25 £2.46
MIC4576WU-TR Microchip Technology Inc Chip1Stop 121 $3.21 $2.62
MIC4576WU-TR Microchip Technology Inc microchipDIRECT 740 $4.14 $2.62
MIC4576WU-TR Microchip Technology Inc Future Electronics - $3.95 $2.77
MIC4576WU-TR Microchip Technology Inc New Advantage Corporation 1,500 $4.98 $4.53
MIC4576WU-TR Microchip Technology Inc Future Electronics 750 $2.49 $2.49
MIC4576WU-TR Microchip Technology Inc Avnet 750 €2.29 €1.79
MS51957-6 W/NP Bisco Bisco Industries 211 - -

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576-W Datasheets Context Search

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2005 - V14MLA0805LH

Abstract: V5.5MLA0805H V5.5MLA0603H Metal-Oxide Varistor ml 311 576-V33CH8 V42MLA1206H V14MLA0805
Text: applications D Max. E L W 1206 0805 1210 0.035 0.043 0.071 0.113 0.015 ± 0.008 0.01 to , 0.049 to 0.008 0.06 ±0.011 0.10 ± 0.012 Varistors · W Dimension Applications: For , , E135010 W E Millimeters Inches Symbol MIN D E L W MAX MIN 0.080 0.050 0.335


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PDF
Not Available

Abstract: No abstract text available
Text: MITSUBISHI LSIs M H 1 S 7 2 C X J -1 0 ,-1 2 ,-1 5 75,497,472-B IT ( 1,048, 576-W O R D BY 72 , « íes,. ^ MITSUBISHI LSls t i MH1S72CXJ-10,-12,-15 75,497,472-B IT ( 1,048, 576-W Q , -10,-12,-15 75,497,472-BIT ( 1,048, 576-WORD BY 72-BIT ) Synchronous DYNAMIC RAM JZ /CAS / W E CKE , « MITSUBISHI LSIs Si fe V ^ MH1S72CXJ-10,-12,-15 I«» ^ 75,497,472-B IT ( 1,048, 576-W O R , ELECTRIC 5 MITSUBISHI LSIs MH1S72CXJ-10,-12,-15 _ 7 5,497,472-B IT ( 1,048, 576-W O R


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PDF 472-B 72-BIT MH1S72CXJ 72-bit MH1S72CXJ-10 472-BIT 576-WORD
6dq6

Abstract: BY16-BIT
Text: M ITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80 8,388,608-B IT (1048, 576-W O R D BY 8-B IT / 524,288- W , M5M29FB/T800FP,VP,RV-80 8,388,608-B IT (1048, 576-W O R D BY 8-B IT / 524,288- W O R D B Y16-BIT) CMOS 3.3V , .7.0 M ITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80 8,388,608-B IT (1048, 576-W O R D BY 8-B IT / 524,288- W , -B IT (1048, 576-W O R D BY 8-B IT / 524,288- W O R D B Y16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY , /T800FP,VP,RV-80 8,388,608-B IT (1048, 576-W O R D BY 8-B IT / 524,288- W O R D B Y16-BIT) CMOS 3.3V


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PDF M5M29FB/T800FP RV-80 608-B BY16-BIT) M5M29FB/T800FP, 608-bit 29FB/T800FP, 44pin 48pin 16bit 6dq6 BY16-BIT
weller wsp80

Abstract: WSP80 WSD80 weller tc201p weller ds80 WSD130 WST20 weller ec1503a DSV80 EC1503A
Text: heat. cAccepts One 80 W Iron Plus Any Other 50 W Accessory cDigital Control Electronics Powerful. Two , : 6 1 /2" ¥4 1 /2" ¥4" (L ¥ W ¥H) Fast. As a result, the new patented Weller low-mass tip has a 10 , using the 984-7003. WSP80. Soldering Iron (80 W with LTB Tip , connection sequences. The WCB1 984-1201. EC1201A. Soldering Iron (40 W with ETA Tip) EACH 100.20 calibration , . EC1503A. Difficult Applications Soldering Tool (42 W with EMA Tip


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PDF WSD130 cPUD130 WSP80 DSV80 weller wsp80 WSD80 weller tc201p weller ds80 WST20 weller ec1503a EC1503A
mjab

Abstract: 26P0 melco APD str 2105 M5M4C1000-10 MEAB Hl97 L9739 L1235 M5M4C1000J-12
Text: -BIT(1048 576-WORD BY 1-BIT) DYNAMIC RAM Hidden Refresh Cycle RAS CAS A0~A9 W A MITSUBISHI ELECTRIC , D — |T 26] Vss (OV) Write control input W —> H] —Q Data input Row address D. 0 rr , inputs Address inputs -CAS Column address strobe input Vss <0V) *— W Write control input NC No , W D Row address Golumm address Q Read ACT ACT NAC DNC APD APD VLD YES Fast page mode identical , , data input V, = Vss 5 pF C|( W ) Input capacitance, write control Input f = 1MHz 7 pF Input


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PDF M5M4C1000P 576-BIT 576-WORD H-L9739-A KI-8610 mjab 26P0 melco APD str 2105 M5M4C1000-10 MEAB Hl97 L9739 L1235 M5M4C1000J-12
Not Available

Abstract: No abstract text available
Text: -10,-12,-15 75,497,472-BIT (1,0 48 , 576-WORD BY 7 2-B IT ) Synchronous DYNAMIC RAM Add CKEO /SO / W /RE /CE - WV- -A A /V -wv-A /v y- O - 3= 3 - w vCQ - / W \r DQM H /CAS CKE CLK /WE DOML , DQ53 DQ52 VDD DQ47 DQ46 VSS DQ45 DQ44 VDD DQ39 DQ38 VSS DQ37 DQ36 VDD A6 A7 VSS A11ÍBA> NC VDD DQM / W , /015 /CAS /WE CKE CLK DOML /RAS /CS Add R E G E -J J-'W Vf-V A rÏ-A M /l- ' W V - 1 /0 0 1 , ¿12- AM /315- W ^ jie-'vw31?-* -A M /J lg - A A / V " _ - / W V- D -A / W - 1-A A A ^ 2 -A A A


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PDF MH1S72CXJ-10 472-BIT 576-WQRD 72-BIT MH1S72CXJ 72-bit 576-WORD
RV-80

Abstract: U150D
Text: LSIs M5M29FB/T800FP,VP,RV-80r 10r 12 8 ,388,608-B IT (1048, 576-W O R D BY 8-B IT / 524,288- W O R D , ,RV-80r 10r 12 8 ,388,608-B IT (1048, 576-W O R D BY 8-B IT / 524,288- W O R D B Y16-B IT) CMOS 3.3V , ,608-B IT (1048, 576-W O R D BY 8-B IT / 524,288- W O R D B Y16-B IT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH , (1048, 576-W O R D BY 8-B IT / 524,288- W O R D B Y16-B IT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY , LSIs M5M29FB/T800FP,VP,RV-80r 10r 12 8 ,388,608-B IT (1048, 576-W O R D BY 8-B IT / 524,288- W O R D


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PDF M5M29FB/T800FP 608-BIT 576-WORD 288-WORD BY16-BIT) 29FB/T800FP, 608-bit 44pin 48pin RV-80 U150D
18165B

Abstract: No abstract text available
Text: < /) T 1,2 2 2 1 1 1,2 1,2 2 1,3 4 RAS ONLY REFRESH CBR REFRESH Notes I 1. These W R ITE cycles may also be BYTE W RITE cycles (either LCAS or UCAS active). 2. These READ cycles may also be BYTE , -55 to +125 Unit V V mA W °C °C vT VCc 'o u t Pd topt t stg Recommended DC Operating , time Data-in setup time Data-in hold time W E to Data-in delay Read-Modify-Write Cycle Symbol , ,19 ` w c s `WCH tWP `r w l `CWL 20 `DS `DH `WED 0 10 10 - 0 15 10 - ns ns ns


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PDF 18165B 16-Bit 42-pin 50/44-pin 18160BT-6 18160BT-7 400mil
Not Available

Abstract: No abstract text available
Text: Value -1.0 -0.5 -1.0 -0.5 t o +7.0 to +4.6 to +7.0 to +4.6 50 1.0 0 to +70 -55 t o +125 Unit V V mA W °C , Read-modify-write cycle time RAS to W E delay time LCAS/UCAS to W E delay time Column address to W E delay time OE hold time from W E Symbol *RWC l RWD 'CWD (AWD *OEH VG26(V)(S)18160B -6 -7 Max Min Min Max 150 80 , )18160B -6 Parameter Fast page mode read-modify-write cycle LCAS/UCAS precharge to W E delay time Fast , cycle. 7 .tc A s (min)=tCWD(min)+ iC W lJmin)+tT in read-modify-write cycle. 8 tA S c (min) ' 'RCS


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PDF 18160B 16-Bit 42-pin 50/44-pin lG5-0037 18160BT-6 18160BT-7
2013 - Not Available

Abstract: No abstract text available
Text: €¢ • • Functional Block Diagram Frequency: DC to 2.0 GHz Output Power (P3dB): 260 W at 1.2 , Description Pin Configuration The TriQuint T1G2028536-FS is a 285 W (P3dB) discrete GaN on SiC HEMT , 24 A -57 to 67 mA 260 W 36 V (Typ.) 576 mA (Typ.) 1.33 A (Typ.) -3.0 V (Typ.) 250 ° (Max) C 226 W 288 W 320 ° C Storage Temperature Electrical specifications are measured at , 20.8 316.0 66.7 65.6 17.8 Units dB W % % dB Notes: 1. VDS = 36 V, IDQ = 576 mA; Pulse


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PDF T1G2028536-FS T1G2028536-FS TQGaN25HV
2013 - Not Available

Abstract: No abstract text available
Text: €¢ • • Functional Block Diagram Frequency: DC to 2.0 GHz Output Power (P3dB): 260 W at 1.2 , Description Pin Configuration The TriQuint T1G2028536-FL is a 285 W (P3dB) discrete GaN on SiC HEMT , 24 A -57 to 67 mA 260 W 36 V (Typ.) 576 mA (Typ.) 1.33 A (Typ.) -3.0 V (Typ.) 250 ° (Max) C 226 W 288 W 320 ° C Storage Temperature Electrical specifications are measured at , 20.8 316.0 66.7 65.6 17.8 Units dB W % % dB Notes: 1. VDS = 36 V, IDQ = 576 mA; Pulse


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PDF T1G2028536-FL T1G2028536-FL TQGaN25HV
2013 - Not Available

Abstract: No abstract text available
Text: €) Bulk Pack 100 Holder: PCB Mount w / Solderable Pin Terminals 2.5W Max Bulk Pack 100 Holder: PCB Mount w / Solderable Pin Terminals 1.6W Max Bulk Pack 100 575 0000 0001 11.7-0.15 Holder: Panel Mount w / Quick Connect Terminals 576 0000 0001 0.50 (0.020”) 570 0000 0001


Original
PDF
Not Available

Abstract: No abstract text available
Text: 6 -B IT (1048 576-W ORD BY 1 -B IT ) DYNAM IC RAM —Fast Page Mode— S E P , 16, 1986 , SEMICONDUCTORS M5M4C1000P,J,L-10,-12,-15 1048 5 7 6 -B IT (1 0 4 8 576-W ORD BY 1 -B IT )D Y N A M IC RAM , SEMICONDUCTORS M5M4C1000P,J,L-10,-12,-15 1048 5 7 6 -B IT (1 0 4 8 576-W ORD BY 1 -B IT )D Y N A M IC RAM , SEMICONDUCTORS M5M4C1000P,J,L-10,-12,-15 1048 5 7 6 -B IT (1048 576-W ORD BY 1 -B IT )D Y N A M IC RAM , M5M4C1000P,J,L-10,-12,-15 1048 5 7 6 -B IT (1048 576-W ORD BY 1 -B IT )D Y N A M IC RAM A MITSUBISHI


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PDF M5M4C1000P 576-word
64S20

Abstract: No abstract text available
Text: -BIT) (4-BANK x 2,097,152- W ORD x 8-BIT) (4-BANK x 1,048, 576-W ORD x 16-BIT) Multi Bank , ) 8-BIT) (4-BANK x 1,048, 576-W ORD x 16-BIT) WRITE After tRCD from the bank activation, a WRITE , (4-BANK x 1,048, 576-WORD x 4 -b it) 8-BIT) 16-BIT) [ W rite Interrupted by Precharge ] Burst , (4-BANK x 1,048, 576-W ORD x 4-b it ) 8-BIT) 16-BIT) AUTO REFRESH Single cycle of , ,048, 576-W ORD x 16-BIT) SELF REFRESH Self-refresh mode is entered by issuing a REFS command (/CS


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PDF 152-WORD 576-WORD 16-BIT) M2V64S20DTP 304-word M2V64S30DTP M2V64S40DTP 576-word 64S20
2013 - Not Available

Abstract: No abstract text available
Text: €¢ • • Functional Block Diagram Frequency: DC to 2.0 GHz Output Power (P3dB): 260 W at 1.2 , Description Pin Configuration The TriQuint T1G2028536-FL is a 285 W (P3dB) discrete GaN on SiC HEMT , 24 A -57 to 67 mA 260 W 36 V (Typ.) 576 mA (Typ.) 13.3 A (Typ.) -3.0 V (Typ.) 250 ° (Max) C 226 W 288 W 320 ° C Storage Temperature Electrical specifications are measured at , 20.8 316.0 66.7 65.6 17.8 Units dB W % % dB Notes: 1. VDS = 36 V, IDQ = 576 mA; Pulse


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PDF T1G2028536-FL T1G2028536-FL TQGaN25HV
TMS44410

Abstract: TMS44410-70
Text: Packaget (Top View) W 1/D Q 1 C 1 2 3 4 5 U 26 I ] v s s 25 W 4 /D Q 4 24 W 3 /D Q 3 23 C À S 22 Ô Ë , ns 40 ns 45 ns READ OR WRITE CYCLE (MIN) 155 ns 181 ns 205 ns 245 ns W 2 /D Q 2 C W B / W RAS C A9 , View) OE ] 1 W 3 /D Q 3 H 3 2C CAS ^SS H 5 4 C W 4/DQ4 6 [ W1/DQ1 8 C W B/ W 1 0 C A9 12 C A1 14 [ A3 W 2/DQ2 ] 7 RAS D 9 AO D ii A2 13 V CC H 15 A5 in ? A7 H l 9 is , ! conlorm to sp ecifications per ttie term» of Tex»* Inslrum enla standard w arranty Production p ro cessin


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PDF TMS44410 576-WORD SMHS441 TMS44410-60 TMS44410-70 TMS44410-80 TMS44410-10
SMJ44400

Abstract: ras 0610
Text: Column Address JD and HR Packages (Top View) DQ1 C 1 20 E vss DQ2 c 2 19 E DQ4 W IE 3 18 E DQ3 RAS E , 11 E A4 HM and CSOJ Packages (Top View) D01 r L 1 L 26 E vss DQ2 e 2 25 E DQ4 W e 3 24 J , Inputs CAS Column-Address Strobe DQ1-DQ4 Data In/Data Out OE Output Enable RAS Row-Address Strobe W , latching the address bits into the column-address buffer. write enable ( W ) The read or write mode is selected through the write-enable ( W ) input. A logic high on the W input selects the read mode and a logic


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PDF SMJ44400 576-WORD SGMS041B MIL-STD-883C, SMJ44400-80 SMJ44400-10 SMJ44400-12 SMJ44400 SGMS041 ras 0610
16S1151

Abstract: oasi
Text: Data Output RÄ51-RÄ34 Row-Address Strobes VDD 5-V Supply VSS Ground W Write Enable _ , activating the column decoder and the input and output buffers. write enable ( W ) The read or write mode is selected through the write-enable ( W ) input. A logic high on the W input selects the read mode and a logic , a pull-up resistor. The data inputs are disabled when the read mode is selected. When W goes low , common I/O operation. data in (D) Data is written during a write cycle. The falling edge of CAS or W


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PDF TM4256FC1, TM4257FC1 22-Pin TM425. 16S1151 oasi
TMS44400-12

Abstract: CI 576 TMS44400 TMS44400-10 TMS44400-80
Text: Manufacturer TM S44400 1,048, 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY test mode entry cycle CAS W , Strobe DQ1-DQ4 Data In/Data Out SI Output Enable RAS Row-Address Strobe w Write Enable Vcc 5 , , as well as latching the address bits into the column-address buffer. write enable ( W ) The read or write mode is selected through the write-enable ( W ) input. A logic high on the W input selects the read , circuits without a pull-up resistor. The data input is disabled when the read mode is selected. When W goes


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PDF S44400 576-WORD TMS44400-80 TMS44400-10 TMS44400-12 TMS44400 CI 576
zig bee

Abstract: TMS44400 TMS44400P
Text: –¡ DQ3 DQ3Ü 3 24 □ W RAS C 4 23 □ CAS CAS C 4 23 □ RAS A9 C 5 22 □ ÖE OÊC 5 22 □ A9 AOC 9 , In/Data Out OE Output Enable RAS Row-Address Strobe W Write Enable NC No Internal Connection vec , the address bits into the column-address buffer. write enable ( W ) The read or write mode is selected through the write-enable ( W ) input. A logic high on the W input selects the read mode and a logic low , pullup resistor. The data input is disabled when the read mode is selected. When W goes low prior to CAS


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PDF Sbl725 007W1 TMS44400, TMS44400P 576-WORD SMHS44Ã 1989-REVISED TMS44400/P-60 TMS44400/P-70 TMS44400/P-80 zig bee TMS44400
Not Available

Abstract: No abstract text available
Text: ) (*CAC) (MAX) 20 ns 25 ns 30 ns 40 ns ta(CA) (tCAA) (MAX) 40 ns 45 ns 55 ns 70 ns READ OR W RITE CYCLE , ) c2 RAS c 3 W TF c NC c 4 5 D c 25 24 23 22 Q CAS NC A9 CO CO < CO CM D W , 1 2 W RA S TF NC A0 A1 3 4 5 6 7 8 A2 A3 V CC 9 10 V SS Q CAS NC A9 A8 A7 A6 A5 A4 SV PACKAG Et (TOP VIEW ) A9 H i ° Q ]3 D D5 RA S D t NC ] 9 A0 ii 2[ C A S 4 [ VSS 6[ W , ] 19 t Packages are shown for pinout reference only. PIN NOMENCLATURE A0-A9 CAS D NC Q RAS TF W VCC


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PDF SMJ4C1024 576-BIT SGMS023B-DECEMBER 1988-REVISED MIL-STD-883, 4C1024-80 4C1024-10 4C1024-12 4C1024-15
TMS44400

Abstract: TMS44400-10
Text: (MIN) 155 ns 181 ns 205 ns 245 ns DM AND DJ P acka ge st (Top View) DQ1 c DQ2 c W c RAS c A9 c A0 , RAS I] 9 AO D h A2 H 13 V CC : i 5 2 C CAS 4 [ D04 6 C DQ1 8 C W 10 c A9 12 C A1 14 : A3 16 c A4 , (ZIP) Package · Operating Free-Air Temperature Range . . . 0°C to 70°C A0-A9 CAS DQ1-DQ4 OE RÄS W , Include testing of ell parameters. A . , T j r V A C I L A r w J '¡ T C o p y rig h t © 19 9 1 , T , , as well as latching the address bits into the column-address buffer. write enable ( W ) The read or


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PDF TMS44400 576-WORD TMS44400s TMS44400-60 TMS44400-70 TMS44400-80 TMS44400-10 SMHS440B
Not Available

Abstract: No abstract text available
Text: a lo is * w i*th o u t notice.' ^G2bD55 DDDDQ4Û 07b ■NT56V1616A0T 1,048, 576-word x , without notice. W bD2E DOOOObl SGT NT56V1616A0T 1,048, 576-word x 16-bit Synchronous DRAM , w H h o t r t notice.' TDELQ25 DODOGbM 5 1 e W ) Ê NT56V1616A0T 1,048, 576-word x 16 , x 16-bit Synchronous DRAM i W . ' : •\ ELECTRICAL CHARACTERISTICS Absolute Maximum , IO S Pd Ta Tstq I in ji UNII V V mA W °C °C Stresses greater than those listed


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PDF NT56V1616A0T 576-word 16-bit NT56V1616A0T 288-word 16-bit PC100 TDELQ25
4C1024

Abstract: SGM 430 zig bee T 2109 ti 4c1024 SMJ44C256 SMJ4C1024
Text: 26 □ Vss w C 2 25 □ Q D RAS C 3 24 □ CAS W TFC 4 23 □ NC EÄ5 NC C 5 22 □ A9 TF , W Write Enable vcc 5-V Supply Vss Ground PftOOUCIWI DATA MonMUon b cumul aa duMalN Product , , as well as latching the address bits into the column-address buffer. write enable ( W ) The read or write mode is selected through the write-enable ( W ) input. A logic high on the W input selects the read , circuits without a pullup resistor. The data input is disabled when the read mode is selected. When W goes


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PDF SMJ4C1024 576-BIT SGMS023B-DECEMBER1988-REVISED MIL-STD-883, 4C1024-80 4C1024-10 4C1024-12 4C1024-15 1988-REVISED 4C1024 SGM 430 zig bee T 2109 ti 4c1024 SMJ44C256 SMJ4C1024
Not Available

Abstract: No abstract text available
Text: (MIN) 130 ns 150 ns 180 ns DJ PACKAGEt (TOP VIEW) SD PACKAGEt (TOP VIEW) DQ1 C w C 1 3 u , 6 [ DQ1 B[ W 10 C 12 C 14 C 16 [ A9 A1 A3 A4 A0 11 A2 ] 1 3 V CC ] 15 A5 H 17 A7 D 19 18 C A6 20 C A8 * DQ1 C 1 o D Q 2Ü 2 w C 3 RAS C 4 A9Ü 5 AOC 9 A1C A2Ü A3 C vccC 10 11 12 13 , D Q 3 C 24 C A S H 23 o e 1 DQ1 2 DQ2 3 W 4 RAS 5 A9 9 A0 10 A1 11 A2 12 A3 13 V c c , * * * * tThe packages shown are for pinout reference only. PIN NOMENCLATURE A0-A 9 CAS D Q1-DQ 4 OE RAS W


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PDF TMS46400, TMS46400P 576-WORD SMHS464-JANUARY TMS46400P) TMS46400/P-70 TMS46400/P-80 TMS46400/P-10
Supplyframe Tracking Pixel