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534 BK078 Alpha Wire 534 BLACK 25 PC/PKG
RNC55H5340BSB14 Vishay Dale ERC-55 534 .1% T-2 RNC55H5340B
SC3DF-220 Signal Transformer Inc FIXED IND 22UH 860MA 534 MOHM
0192870109 Molex DIE SET 4 ASP-C-534
CMYTVS5-2 TR Central Semiconductor Corp TVS DIODE 5VWM 12VC SOT-534
0192880205 Molex DIES/ FEM. FIQD 12-10 ATP-C-534
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12-703-6-0534-NADCAP Concord Electronics Inc Master Electronics 300 - -
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534-NA Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: connector N.A . N.A . N.A . Index De sig na t ion 33797 33788 26570 Mod . 10/08/06 24/07/06 0 1-FEB -0 0 D


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PDF F-95972
Not Available

Abstract: No abstract text available
Text: All Diiensions in n Original Size Dill A A Au Oat. N.A . Insp. N.A . P erform ance , Part-No. Naie Detail. 01-FEB-00 N.A . 2 3 Nicht tolerierte Masse/ Free size hlermces


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PDF vorbehalten/111rights 01-FEB-00 F-95972
2000 - Not Available

Abstract: No abstract text available
Text: 0.51 0.89 No. of Pads Stencil Opening K K Sw S 6 mil 752 1.90 0.63 0.33 NA , Sw S Q 4 mil 753 2.75 0.30 0.15 NA 0.108 0.012 0.006 6 mil 753 1.72 0.30 0.15 NA , 0.012 0.058 0.006 16 18 20 24 Q 4 mil 752 2.40 0.76 0.38 NA 0.095 0.030 0.015 Dim


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2001 - Not Available

Abstract: No abstract text available
Text: 0.63 0.33 NA 0.075 0.025 0.013 0.350 0.400 0.450 0.550 K Sw S 0.350 0.400 0.450 , 16 18 20 24 Q Dim. “H” Dim In. mm 8 9 10 12 4 mil 752 2.40 0.76 0.38 NA , 13.97 8 9 10 12 Sw S Q 4 mil 753 2.75 0.30 0.15 NA 0.108 0.012 0.006 6 mil 753 1.72 0.30 0.15 NA 0.068 0.012 0.006 0.175 0.200 0.225 0.275 4.44 5.08 5.72 6.99 16


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2011 - DIODE MARKING 534

Abstract: No abstract text available
Text: =1.0MHz MIN 60 1 100 -100 1 2.1 0.6 0.09 2700 2.5 3.75 1.5 13.5 7.5 20 11 4 50 25 5 20 TYP MAX UNIT V A nA nA


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PDF 2N7002DW 2N7002DW 400mA QW-R502-534 DIODE MARKING 534
2012 - 1025 mosfet

Abstract: No abstract text available
Text: V A nA nA V V pF pF pF nS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage


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PDF 2N7002DW 300mA, 2N7002DW 2N7002DWL-AL6-R 2N7002DWG-AL6-R OT-363 QW-R502-534 1025 mosfet
2014 - Not Available

Abstract: No abstract text available
Text: , ID=50mA UNIT V μA nA nA 60 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage MAX


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PDF 2N7002DW 300mA, 2N7002DW 2N7002DWG-AL6-R OT-363 QW-R502-534
Not Available

Abstract: No abstract text available
Text: SGS-TtfOMSON M 54/74HCT374 M 54/74HCT534 iO OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT HCT374 NON INVERTING - HCT534 INVERTING ■HIGHSPEED fMAX = 62 MHz (TYP.) AT Vcc = 5 V ■LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT Ta = 25 °C ■COMPATIBLE WITH TTL OUTPUTS Vih = 2V (MIN.) Vil = 0.8V , 54HC Min. Max. 2.0 0.8 V 0.8 lo=-20 nA 4.4 4.5 4.4 4.18 4.31 4.13 V 4.4 lo=-6.0 mA Unit 4.10 V lo= 20 nA 0.0 0.1 0.1 0.1 lo= 6.0 mA


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PDF 54/74HCT374 54/74HCT534 HCT374 HCT534 54/74LS374/534 74HCTXXXM M54/74HCT374, T374/534
2008 - Connettori ITS

Abstract: No abstract text available
Text: ns. Conta tti / Conta c t size ° R a ting c ont. 4 / 0 0 4 8 12 16 18 20 D isposiz. Cl. isol. Arra ng. D isposiz . Cl. isol. A rra n g. 20 - 27 R a ting ° c ont. A D ime , arrangement D isposiz. Cl. isol. Arra ng. R a ting ° c ont. 28 - 1 A D 0 4 8 12 , t size ° R a ting c ont. 4 / 0 0 4 8 12 16 18 20 D isposiz. Cl. isol. 6 14 16 , thermocouple contacts Ins e rto Insert ° contatti ° of conta cts Inse rto Std Std i nsert


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2012 - Not Available

Abstract: No abstract text available
Text: =50mA VGS=10V, ID=300mA,TJ=125°C VGS =5.0V, ID=50mA UNIT V A nA nA 60 ON CHARACTERISTICS


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PDF 2N7002DW 2N7002DW 2N7002DWL-AL6-R 2N7002DWG-AL6-R OT-363 QW-R502-534
Not Available

Abstract: No abstract text available
Text: /= 7 ^7# S G S -T H O M S O N M 54/74HC T374 M 54/74HC T534 OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT HCT374 NON INVERTING - HCT534 INVERTING HIGHSPEED fMAX = 62 MHz (TYP.) AT Vcc = 5 V LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT T a = 25 °C COMPATIBLE WITH TTL OUTPUTS V ih = 2V (MIN.) V il = 0.8V (MAX) OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE Io l = I I o h I = 6 , lo=-20 nA lo=-6.0 mA 4.4 4.18 4.5 4.31 0.0 0.17 0.1 4.4 4.13 0.1 0.33 ±1 40 2.9 4.4 VoH 4.5


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PDF 54/74HC HCT374 HCT534 54/74LS374/534 M54/74HCT374, M54/74HCT534, T374/534
Not Available

Abstract: No abstract text available
Text: ) T E R M IN A L BASE Na l/C AOV? A Opional .140 (3,56) Dia. '(5.08) Hole for Thru Base Tuning


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PDF 105UC 22865A
74LS

Abstract: MV74SC373 MV74SC374 MV74SC533 MV74SC534 MV74SC563 MV74SC564 MV74SC573 MV74SC574
Text: voltaga "OH 2.4 4.35 V V V^c . 4.7SV. I0H - -10mA. 'OH " _2, nA Low laval output voltaga VOL 0.4 V - 4.75V , nL - 667 output anaoia tima to high lavai 'PZH 40 ns Output dieaoie tima (ram low lavai 'PLZ 33


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PDF MV74SC373/374/533/534/563/564/573/574 MV74SC373, MV74SC374, MV74SC533 MV74SC534, MV74SC563, MV74SC564 MV74SC573, MV74SC574 MV74SC534and 74LS MV74SC373 MV74SC374 MV74SC534 MV74SC563 MV74SC573 MV74SC574
2013 - SILICON APD Pre-Amplifier

Abstract: No abstract text available
Text: nA kΩ %/˚C A V mA mA kΩ nF kΩ Note : 1 - Vr as specified on datasheet of each , 15 10 10 68 1.0 40 20 V + or V/°C nA kΩ %/˚C A V mA mA kΩ nF kâ


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PDF 264-339795-VAR 12-lead 550-1050nm Opto795-VAR SILICON APD Pre-Amplifier
2013 - Not Available

Abstract: No abstract text available
Text: -0.5 - nA Responsivity (R) 4.5 5.5 - MV/W - 15 25 fW/√Hz 40 80 , R10 10 10 68 330 V V/°C nA mV/°C mA mA kΩ nF kΩ kΩ Note: 1 - Vr as


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PDF 264-339794-VAR 12-lead 500-1050nm 500um, 200um, Opto794-VAR
hc574

Abstract: HC374 HC534 HC564 74hc574 74HCS6
Text: 5.60 Vol Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 V|H or V|L 20 nA - 0 0 0 0.1 0.1 0.1 - 0.1 0.1


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PDF HC374-NON HC534 HC564 HC574 M54/74HC374, M54/74HC534, M54/74HC564 M54/74HC574 HC374 HC574) 74hc574 74HCS6
TRANSISTOR 536

Abstract: transistor b 536 BD 534 536 transistor BD 536 TRANSISTOR 538 BD538C transistor k 538
Text: , lc = - 2A : - 2V, lc = - 3A - 2 A , l B= - 0 .2 A 1 ^A nA mA hF E 20 15 40 25 15 30


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PDF BD534/536/538 BD533, BD535 BD537 BD534 BD536 BD538 300/iS. TRANSISTOR 536 transistor b 536 BD 534 536 transistor BD 536 TRANSISTOR 538 BD538C transistor k 538
2001 - Transistor NEC K 3654

Abstract: transistor on 4409 3019 Transistor NEC k 3654
Text: dB nA nA 50 GHz pF dB dB 11 17 20 0.22 13 1.9 2.5 0.3 7 Gain Bandwidth at VCE = 1 V, IC = 10 mA, f = , = Zopt UNITS nA nA 70 10 12 0.4 9 1.5 2.0 100 100 100 0.7 MIN UPA861TD TD TYP MAX 100 100 140 Q1


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PDF UPA861TD UPA861TD NE894 NE687 Transistor NEC K 3654 transistor on 4409 3019 Transistor NEC k 3654
M74HC374

Abstract: No abstract text available
Text: 4.31 4.13 4.10 5.68 5.8 6.0 V 1.9 4.5 5.63 V 5.60 0.0 lo= 20 nA


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PDF M54/74HC374 M54/74HC534 HC374 HC534 54/74LS374/534 54HCXXXF1R 74HCXXXM1R 74HCXXXB1R M74HCXXXC1R M54/M74HC374/534 M74HC374
SEK18

Abstract: harting gds a-c 96 sek 18 harting Resistance Colour code HARTING 09-18-510 HARTING 09 18 510 7324 IEC918 09 18 526 6813, HARTING DIN 41652 part 2 te 901 7814
Text: mm Tools page 14 For Performance Level For Performance Level No. of contacts Part Na Drawing No , . transition connector 2 rows Na of contacts Part No. 09 18 106 9621 09 18 110 9621 09 18 114 9621 09 18 , No. of contacts Part Na 09 19 010 9643 09 19 016 9643 09 19 020 9643 09 19 026 9643 09 19 034 9643 09 19 040 9643 09 19 050 9643 Drawing Dimensions in mm Na of contacts A B 10 17.78 1.27x 9 =


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PDF E-08029 S-16353 CH-8604 D-01219 D-32325 MO/31 SEK18 harting gds a-c 96 sek 18 harting Resistance Colour code HARTING 09-18-510 HARTING 09 18 510 7324 IEC918 09 18 526 6813, HARTING DIN 41652 part 2 te 901 7814
NDS9933

Abstract: Transistor c 4138 LA 4138
Text: = "10 V, VGS= 0 V, Tj= 70°C -5 MA 'gssf Gate - Body Leakage, Forward VGS=12V,VDS = 0V 100 nA 'gssr Gate - Body Leakage, Reverse Vgs = -12V,VDS=0V -100 nA ON CHARACTERISTICS ino» 2


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PDF NDS9933 bSD113D NDS9933 Transistor c 4138 LA 4138
2002 - KSH200

Abstract: No abstract text available
Text: IC=100mA, IB=0 Min. 25 ICEO Collector Cut-off Current VCB=40V, IE=0 100 nA ICBO Collector Cut-off Current VEBO=8V, IC=0 100 nA IEBO Emitter Cut-off Current VCE=1V, IC


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PDF KSH200 KSH200
2002 - KSH210

Abstract: No abstract text available
Text: = - 40V, IE = 0 -100 nA IEBO Emitter Cut-off Current VEBO = - 8V, IC = 0 -100 nA hFE * DC Current Gain VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 2A VCE = - 2V, IC = -


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PDF KSH210 KSH210
2002 - Not Available

Abstract: No abstract text available
Text: Collector Cut-off Current VCB = - 40V, IE = 0 -100 nA IEBO Emitter Cut-off Current VEBO = - 8V, IC = 0 -100 nA hFE * DC Current Gain VCE = - 1V, IC = - 500mA VCE = - 1V, IC =


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PDF KSH210 12ner
Not Available

Abstract: No abstract text available
Text: *»w *érto.* V:-' . j V- •• w• -•'• »n ■£* -. ^ » .f<« ' 'a^ fl«â


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