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Part Manufacturer Description Datasheet Download Buy Part
IXTT52N30P IXYS Corporation Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
IXFH52N30P IXYS Corporation Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC, TO-247, 3 PIN
IXTQ52N30P IXYS Corporation Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

Search Stock (17)

  You can filter table by choosing multiple options from dropdownShowing 17 results of 17
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
CP305-2N3019-CT Central Semiconductor Corp Avnet - -
CP305-2N3019-CT20 Central Semiconductor Corp Avnet - -
E452N30011C4214 Molex Chip1Stop 35 $9.17 $8.86
E452N30011C4214 Woodhead Molex Master Electronics 350 $7.59 $7.14
E452N30012C4H Woodhead Molex Master Electronics 5 $22.78 $16.06
E452N30012C4H Molex Chip1Stop 1 $19.90 $19.90
IXFH52N30P IXYS Corporation RS Components 60 £4.51 £2.42
IXFH52N30P IXYS Corporation Future Electronics 0 $3.84 $3.84
IXFH52N30P IXYS Corporation RS Components 326 £2.55 £2.42
IXFH52N30Q IXYS Corporation Chip1Stop 28 $9.18 $8.97
IXFH52N30Q IXYS Corporation Chip1Stop 28 $14.50 $10.00
IXFH52N30Q IXYS Corporation Newark element14 54 $12.70 $8.78
IXFH52N30Q IXYS Corporation Farnell element14 54 £9.97 £7.75
IXFH52N30Q IXYS Corporation element14 Asia-Pacific 54 $15.56 $9.86
IXFT52N30Q IXYS Corporation Chip1Stop 30 $12.47 $11.45
IXTQ52N30P IXYS Corporation TME Electronic Components 1 $10.84 $7.49
IXTQ52N30P IXYS Corporation Chip1Stop 30 $4.05 $3.60

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52N30 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
52N30

Abstract:
Text: IXFH IXFH 50N20 58N20 58N 20Q 74N20 80N20 Q 35N30 40N30 40N30 Q 52N30 Q 13N50 21N50 24N50 26N50 26N 50Q , IXFX 180N10 IXFX 80N 20Q IXFX 90N 20Q IXFX 120N20 IXFX 52N30 Q IXFX 90N30 IXFR IXFX IXFR IXFX , IXFT 52N30 Q IXFT 24N50 IXFT 26N50 IXFT 26N 50Q IXFT 32N 50Q IXFJ 32N 50Q IXFT 20N 60Q IXFT 26N


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PDF 76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 44N80 230N10 60n60 7n80 E51G
DSE 130 -06A

Abstract:
Text: IXFH 40N30 IXFH 50N20 IXFH 52N30 Q IXFH 58N20 Q IXFH 58N20 IXFH 67N10 IXFH 6N 100Q IXFH 6N100 IXFH 6N90 , 34N80 IXFK 35N50 IXFK 36N60 IXFK 44N50 IXFK 44N60 IXFK 48N50 IXFK 50N50 IXFK 52N30 Q IXFK 55N50 IXFK , 15N100 IXFX 16N90 Q IXFX 180N10 IXFX 26N60 Q IXFX 32N50 IXFX 34N80 IXFX 44N60 IXFX 50N50 IXFX 52N30 Q


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PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 30N60B vub 70-16 DSEI 30-16 AS 80N10 12N60CD DSEP 15-06A 13N50
2000 - C1162

Abstract:
Text: 40N30Q IXFH 52N30Q IXFM 35N30 IXFX 90N20Q IXFX 120N20 IXFR 120N20 IXFK 90N20Q IXFK 120N20 IXFN , -108 C1-110 C1-112 C1-114 C1-116 C1-116 IXFT 40N30Q IXFJ 40N30* IXFT 52N30Q IXFK 52N30Q IXFK 73N30


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PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 C1146 60N25 C1328 26n60 120N20 C1156 C1158
12N60c equivalent

Abstract:
Text: 150N15 IXFR 58N20Q IXFR 80N20Q IXFR 90N20Q IXFR 120N20 IXFR 100N25 IXFR 52N30Q IXFR 90N30 IXFR 13N50 IXFR


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PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 32N50 004II 24N60CD1 19N250 9N14
2004 - 52N30P

Abstract:
Text: 52N30P IXFV 52N30P IXFV 52N30PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless , 6,727,585 6,759,692 2 - Drain TAB - Drain IXFH 52N30P IXFV 52N30P IXFV 52N30PS Fig. 1 , IXFH 52N30P IXFV 52N30P IXFV 52N30PS Fig. 8. Transconductance Fig. 7. Input Adm ittance 60 100 , IXFH 52N30P IXFV 52N30P IXFV 52N30PS Fig. 13. Maximum Transient Therm al Resistance R (th) J C - , Advanced Technical Information PolarHTTM HiPerFET Power MOSFET IXFH 52N30P IXFV 52N30P


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PDF 52N30P 52N30PS 52N30P mosfet 52n30p equivalents PLUS220SMD
1999 - 7n60b

Abstract:
Text: IXFH 40N30 IXFH 40N30Q IXFH 50N20 IXFH 52N30Q IXFH 58N20 IXFH 58N20Q IXFH 67N10 IXFH 6N100 IXFH , IXFK 48N50 IXFK 50N50 IXFK 52N30Q IXFK 55N50 IXFK 73N30 IXFK 80N20Q IXFK 90N20 IXFK 90N20Q IXFK , 32N50 C1-123 IXFT 32N50Q C1-128 IXFT 40N30Q C1-90 IXFT 52N30Q C1-92 IXFT 58N20Q C1-56 IXFT


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PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b DSDI 35-12A ixys dsei 45-12a 35N120u1 20N80 80n60 80n06 IXYS CS 2-12 VVY 40-16IO1 DSI 12-06A
T0247A

Abstract:
Text: RG= 1.5Ì2 (External), IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q_ Characteristic Values (T = , DIXYS HiPerFETTM Power MOSFETs Q-Class AdvancedTechnical Information IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q V w DSS ^D25 R DS(on) *rr = 300 V " 52 A - 60 m f t - ^ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances TO-247 AD (IXFH) Symbol V vD 0R Vos Test Conditions Tj =25°Cto 150°C Tj = 25° C to 150° C; Res = 1 M


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PDF 52N30Q 52N30Q O-247 O-26B T0247A
2000 - transistor 12n60c

Abstract:
Text: IXFR 120N20 IXFR 100N25 IXFR 52N30Q IXFR 90N30 IXFR 13N50 IXFR 26N50Q IXFR 32N50Q IXFR 50N50


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PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1000v 30a MOSFET 1200v 30a equivalent of IGBT 12N60C 12N60c MOSFET 30n120d
2003 - 52N30P

Abstract:
Text: . US patent is pending. DS99115(11/03) © 2003 IXYS All rights reserved IXTQ 52N30P IXTT 52N30P , ,343 IXTQ 52N30P IXTT 52N30P Fig. 1. Output Characteristics @ 25 Deg. C 55 50 45 40 7V VGS = 10V , 52N30P IXTT 52N30P Fig. 7. Input Adm ittance 100 90 80 70 50 TJ = -40ºC 25ºC 125ºC 60 Fig. 8 , Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXTQ 52N30P IXTT 52N30P Fig. 13. Maximum Transient Therm al Resistance 1.00 R (th) J C - (ºC/W) 0.10 0.01 1 10


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PDF IXTQ52N30P IXTT52N30P O-268 52N30P 52N30P
2004 - DIODE 1334

Abstract:
Text: PolarHTTM MOSFET, very low RDS(on) Type VDSS max. V IXTD 110N055P-5S IXTD 75N10P-5S IXTD 110N10P-6S IXTD 140N10P-7S IXTD 170N10P-8S IXTD 200N10P-88 IXTD 62N15P-5S IXTD 96N15P-6S IXTD 120N15P-7S IXTD 150N15P-8S IXTD 180N15P-88 IXTD 50N20P-5S IXTD 74N20P-6S IXTD 96N20P-7S IXTD 120N20P-8S IXTD 140N20P-88 IXTD 42N25P-5S IXTD 64N25P-6S IXTD 82N25P-7S IXTD 100N25P-8S IXTD 120N25P-88 IXTD 36N30P-5S IXTD 52N30P-6S IXTD , 140N20P IXTP 42N25P IXTQ 64N25P IXTQ 82N25P IXTQ 100N25P IXTK 120N25P IXTP 36N30P IXTQ 52N30P IXTQ 69N30P


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PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 100N25P 88N30 36N30 IXTP IXTP IXTP IXTP IXTP75N10P
STW20N60

Abstract:
Text: IT, Telecom and UPS infrastructure applications IXT(1)36N30P IXT(1) 52N30P IXT(1)69N30P IXT(1 , ) 52N30P (2) IXF(1)69N30P IXF(1)88N30P IXFK102N30P IXFN102N30P IXFR102N30P IXF(1)140N30P IXFN140N30P , infrastructure applications IXT(1)36N30P IXT(1) 52N30P IXT(1)69N30P IXT(1)88N30P IXTK102N30P 300 300 , ) 52N30P (2) IXF(1)69N30P IXF(1)88N30P IXFK102N30P IXFN102N30P IXFR102N30P IXF(1)140N30P IXFN140N30P , infrastructure applications IXT(1)36N30P IXT(1) 52N30P IXT(1)69N30P IXT(1)88N30P IXTK102N30P 300 300


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PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50P IXFB100N50 STW20N60FD IXFB100N50P TO-264 IXFH30N60P 15N60P ixfn100n50p IXFN64N50PD2
2006 - Not Available

Abstract:
Text: % © 2006 IXYS All rights reserved DS99246E(03/06) IXFC 52N30P Symbol Test Conditions , ,727,585 6,759,692 6,771,478 B2 IXFC 52N30P Fig. 1. Output Characte ris tics @ 25 De g. C 55 50 , All rights reserved IXFC 52N30P Fig. 7. Input Adm ittance 100 90 80 70 50 TJ = -40ºC 25ºC 125ºC , limits, test conditions, and dimensions. V D S - V olts IXFC 52N30P Fig. 13. M axim um Trans ie , Pulse Width - milliseconds © 2006 IXYS All rights reserved IXYS REF: T_ 52N30P (6S) 03-14-06


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PDF ISOPLUS220TM IXFC52N30P 52N30P 03-14-06-C
2005 - 52N30P

Abstract:
Text: IXFH 52N30P VDSS IXFV 52N30P ID25 IXFV 52N30PS RDS(on) trr = 300 V = 52 A 66 m 200 ns , 52N30P IXFV 52N30PS Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise , IXFH 52N30P IXFV 52N30P IXFV 52N30PS Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended , Degrees Centigrade 125 150 IXFH 52N30P IXFV 52N30P IXFV 52N30PS Fig. 8. Transconductance , dimensions. 10 100 V D S - Volts 1000 IXFH 52N30P IXFV 52N30P IXFV 52N30PS Fig. 13. Maxim


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PDF 52N30P 52N30PS O-247 52N30P 52N30PS PLUS220SMD th2005
2006 - 52n30p

Abstract:
Text: Drain m l l DS99115E(12/05) IXTQ 52N30P IXTT 52N30P Symbol Test Conditions , ,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTQ 52N30P IXTT 52N30P , IXTQ 52N30P IXTT 52N30P Fig. 8. Transconductance Fig. 7. Input Adm ittance 60 100 90 50 , IXTQ 52N30P IXTT 52N30P Fig. 13. Maxim um Transient Therm al Resistance R (th) J C - (ºC/W


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PDF IXTQ52N30P IXTT52N30P O-268 52N30P 52n30p mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P
2008 - 52N30P

Abstract:
Text: dimensions. IXYS REF: T_ 52N30P (6S)3-14-06-C IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 13. Maximum , Pulse Width - milliseconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_ 52N30P (6S


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PDF IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P 52N30 IXFV52N30P IXFV52N30PS PLUS220SMD
2008 - IXTD08N100P-1A

Abstract:
Text: wire recommended IXTP 36N30P IXTQ 52N30P IXTQ 69N30P IXTQ 88N30P IXTK 102N30P IXTP 42N25P


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PDF
2013 - ixtq52n30p

Abstract:
Text: IXYS REF: T_ 52N30P (6S) 9-26-13 IXYS


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PDF IXTT52N30P IXTQ52N30P O-268 52N30P ixtq52n30p IXTT52N30P
Not Available

Abstract:
Text: □ IXYS Advanced Technical Information IXFH 52N30Q IX F K 52N30Q IXFT 52N30Q HiPerFET™ Power MOSFETs Q -Class VDSS , ^D25 R DS(on) t = 300 V = 52 A = 60 mQ < 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Low Gate Charge and Capacitances TO-247 AD (IXFH) Maximum Ratings Symbol Test Conditions V v DR G Td = 25°C to 150°C Td = 25°C to 150 , /98) □ IXYS IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Symbol Test Conditions g. a fs V


OCR Scan
PDF 52N30Q O-247
2000 - Not Available

Abstract:
Text: VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q VDSS ID25 RDS(on) trr , IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless


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PDF 52N30Q 52N30Q O-268AA
2008 - 7N60B equivalent

Abstract:
Text: IXFH 52N30P IXFH 52N30Q IXFH 58N20Q IXFH 69N30P IXFH 74N20P IXFH 75N10Q IXFH 80N10Q IXFH 80N20Q , IXFV 30N60P IXFV 30N60PS IXFV 36N50P IXFV 36N50PS IXFV 52N30P IXFV 52N30PS IXFV 74N20P IXFV , IXFC 20N80P IXFC 22N60P IXFC 26N50P IXFC 26N50P IXFC 30N60P IXFC 36N50P IXFC 52N30P IXFC 74N20P , 48N50Q IXFK 48N60P IXFK 52N30Q IXFK 52N60Q2 IXFK 64N50P IXFK 64N60P IXFK 66N50Q2 IXFK 73N30Q IXFK , IXFT 52N30Q IXFT 58N20Q IXFT 69N30P IXFT 80N10Q IXFT 80N20Q IXFT 96N20P IXFT 120N15P IXFT


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PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
2013 - 52N30

Abstract:
Text: Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_ 52N30P (6S)6-13-06 , Reserved IXYS REF: T_ 52N30P (6S)9-26-13 IXYS


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PDF IXFC52N30P 200ns ISOPLUS220TM E153432 52N30P 6-13-06-C 52N30
2000 - C1162

Abstract:
Text: 100N25 ä IXFN 180N20 ä IXFH 40N30Q ä IXFH 52N30Q IXFX 90N30 IXFH 13N50 IXFH 21N50 IXFH 21N50Q IXFH , 52N30Q ä IXFK 52N30Q IXFK 73N30 IXFK 90N30 IXFN 73N30 IXFN 90N30 C1-120 C1-122 C1-124 C1-126 C1


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PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1146 C1106 C1278 ixfh 60N60 C1104 C1142 C1156 ixfn 26n60 c1238
1998 - Not Available

Abstract:
Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q VDSS ID25 RDS(on) t rr = 300 V = 52 A = 60 m W £ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150 , © 1998 IXYS All rights reserved 98522A (10/98) IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Symbol Test


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PDF 52N30Q 52N30Q O-247 O-268
2004 - Not Available

Abstract:
Text: . US patent is pending. DS99197(7/04) © 2004 IXYS All rights reserved IXFH 52N30P IXFT 52N30P , ,759,692 IXFH 52N30P IXFT 52N30P Fig. 1. Output Characteristics @ 25 Deg. C 55 50 45 40 7V VGS = , 52N30P IXFT 52N30P Fig. 7. Input Adm ittance 100 90 80 70 50 TJ = -40ºC 25ºC 125ºC 60 Fig. 8 , Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXFH 52N30P IXFT 52N30P Fig. 13. Maximum Transient Therm al Resistance 1.00 R (th) J C - (ºC/W) 0.10 0.01 1 10


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PDF IXFH52N30P IXFT52N30P O-268 O-247AD 52N30P 52N30P
1999 - sd 20n60

Abstract:
Text: Contents 0.045 0.033 0.033 IXFH 52N30Q IXFX 90N30 IXFT 40N30Q IXFT 52N30Q IXFK 52N30Q C1


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PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 9n80 60n60 power mosfet 100n20 C2625 IXFH32N50 230N10 8N80
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