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5117405BJ Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: 32bit in a 72-pin single-in-line package comprising eight HYB 5117405BJ 4M x 4 DRAMs in 300 mil wide , 5117405BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS


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PDF 32-Bit 324025S/GS-50/-60 324025S/GS-50) 324025S/GS-60) fiE35bà GGA5345 6235b05
6s3b

Abstract: Q67100-Q2098 Q67100-Q2099
Text: 608 words by 32bit in a 72-pin single-in-line package comprising sixteen HYB 5117405BJ 4M x 4 DRAMs in , board. Each HYB 5117405BJ is described in the data sheet and is fully electrical tested and processed


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PDF 32-Bit HYM328025S/GS-50/-60 0235bD5 328025S/GS-50/-60 L-SIM-72-15 fl235b05 6s3b Q67100-Q2098 Q67100-Q2099
1996 - Q67100-Q2156

Abstract: Q67100-Q2157
Text: 72-pin single-in-line package comprising eight HYB 5117405BJ 4M x 4 DRAMs in 300 mil wide , 5117405BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS


Original
PDF 32-Bit 324025S/GS-50/-60 324025S/GS-50) 324025S/GS-60) GLS05835 L-SIM-72-12 Q67100-Q2156 Q67100-Q2157
1996 - Q67100-Q2098

Abstract: Q67100-Q2099
Text: -pin single-in-line package comprising sixteen HYB 5117405BJ 4M × 4 DRAMs in 300 mil wide SOJ-packages mounted together with sixteen 0.2 µF ceramic decoupling capacitors on a PC board. Each HYB 5117405BJ is described


Original
PDF 32-Bit HYM328025S/GS-50/-60 328025S/GS-50/-60 GLS05859 L-SIM-72-15 Q67100-Q2098 Q67100-Q2099
Not Available

Abstract: No abstract text available
Text: 5117405BJ 4M x 4 DRAMs in 300 mil wide SOJ-packages mounted together with sixteen 0.2 piF ceramic decoupling capacitors on a PC board. Each HYB 5117405BJ is described in the data sheet and is fully electrical tested


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PDF 32-Bit HYM328025S/GS-50/-60 HYM328025S/GS-50/-60 LSM721S GLS05859 L-SIM-72-15
als31c

Abstract: No abstract text available
Text: comprising eight HYB 5117405BJ 4M x 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 |iF ceramic decoupling capacitors on a PC board. Each HYB 5117405BJ is described in the data sheet and is


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PDF 32-Bit 324025S/GS-50/-60 324025S/GS-50) 324025S/GS-60) 0235fci05 L-SIM-72-12 111111iTTTTTTT als31c
1998 - Not Available

Abstract: No abstract text available
Text: -pin single-in-line package comprising sixteen HYB 5117405BJ 4M × 4 EDO-DRAMs and eight HYB 514105BJ 4M x 1 EDO-DRAMs , 5117405BJ and HYB 514105BJ is described in the data sheet and is fully electrical tested and processed


Original
PDF 36-Bit 368025S/GS-50/-60 GLS05858 L-SIM-72-14
1996 - Q67100-Q2098

Abstract: No abstract text available
Text: a 72-pin single-in-line package comprising sixteen HYB 5117405BJ 4M × 4 DRAMs in 300 mil wide , 5117405BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS


Original
PDF 32-Bit HYM328025S/GS-50/-60 LSIM7215 L-SIM-72-15 GLS05859 Q67100-Q2098
300mil-wide trays

Abstract: No abstract text available
Text: 5117405BJ 4M x 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 |iF ceramic decoupling capacitors on a PC board. Each HYB 5117405BJ is described in the data sheet and is fully electrical tested


OCR Scan
PDF 32-Bit 324025S/GS-50/-60 324025S/GS-50) 324025S/GS-60) L-SIM-72-12 324025S/GS-50/-60 300mil-wide trays
Not Available

Abstract: No abstract text available
Text: sixteen HYB 5117405BJ 4M x 4 DRAMs in 300 mil wide SOJ-packages mounted together with sixteen 0.2 |iF ceramic decoupling capacitors on a PC board. Each HYB 5117405BJ is described in the data sheet and is


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PDF 32-Bit HYM328025S/GS-50/-60 DD653tiS 328025S/GS-50/-60 fl235bD5 D0fl53bb
1998 - 5117405

Abstract: Q67100-Q2330
Text: 608 words by 32-bit in a 72-pin single-in-line package comprising sixteen HYB 5117405BJ 4M × 4 DRAMs , PC board. Each HYB 5117405BJ is described in the data sheet and is fully electrical tested and


Original
PDF 32-Bit HYM328025S/GS-50/-60 LSIM7215 L-SIM-72-15 GLS05859 5117405 Q67100-Q2330
1998 - Q67100-Q2366

Abstract: Q67100-Q2367 simm EDO 72pin
Text: organized as 4 194 304 words by 36-Bit in a 72-pin single-in-line package comprising eight HYB 5117405BJ 4M , with ceramic decoupling capacitors on a PC board. Each HYB 5117405BJ and HYB 514105BJ is described in


Original
PDF 36-Bit HYM364025S/GS-50/-60 364025S/GS-50/-60 L-SIM7212 GLS05835 L-SIM-72-12 Q67100-Q2366 Q67100-Q2367 simm EDO 72pin
Not Available

Abstract: No abstract text available
Text: 5117405BJ 4M x 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 jxF ceramic decoupling capacitors on a PC board. Each HYB 5117405BJ is described in the data sheet and is fully electrical tested


OCR Scan
PDF 32-Bit 324025S/GS-50/-60 324025S/GS-50) 324025S/GS-60) 324025S/GS-50/-60 L-SIM-72-12
1998 - Q67100-Q2156

Abstract: Q67100-Q2157
Text: as 4 194 304 words by 32-bit in a 72-pin single-in-line package comprising eight HYB 5117405BJ 4M x , capacitors on a PC board. Each HYB 5117405BJ is described in the data sheet and is fully electrical tested


Original
PDF 32-Bit 324025S/GS-50/-60 324025S/GS-50) 324025S/GS-60) GLS05835 L-SIM-72-12 Q67100-Q2156 Q67100-Q2157
1996 - Q67100-Q2156

Abstract: Q67100-Q2157
Text: a 72-pin single-in-line package comprising eight HYB 5117405BJ 4M x 4 DRAMs in 300 mil wide , 5117405BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS


Original
PDF 32-Bit 324025S/GS-50/-60 324025S/GS-50) 324025S/GS-60) GLS05835 L-SIM-72-12 Q67100-Q2156 Q67100-Q2157
300mil-wide trays

Abstract: Q67100-Q2156 Q67100-Q2157
Text: HYB 5117405BJ 4M x 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 nF ceramic decoupling capacitors on a PC board. Each HYB 5117405BJ is described in the data sheet and is fully


OCR Scan
PDF 32-Bit 324025S/GS-50/-60 324025S/GS-50) 324025S/GS-60) ModufiE35bD5 L-SIM-72-12 B235b05 300mil-wide trays Q67100-Q2156 Q67100-Q2157
Not Available

Abstract: No abstract text available
Text: sixteen HYB 5117405BJ 4M x 4 DRAMs in 300 mil wide SOJ-packages mounted together with sixteen 0.2 |iF ceramic decoupling capacitors on a PC board. Each HYB 5117405BJ is described in the data sheet and is


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PDF 32-Bit 328025S/GS-50/-60 D153232 L-SIM-72-15 01S32B3
5117400

Abstract: sem 2500 7212 tube
Text: 5117405BJ (2 k, 5V, EDO) HYB 3 1 16400BJ (4 k, 3.3V) HYB 3117400BJ (2 k, 3.3V) P-SOJ-28-3 HYB 5117800BSJ


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PDF P-SOJ-26/20-1 J-26/20-5? P-SOJ-28-2 P-SOJ-40-1 P-TSOPII-26/20-1 P-SOJ-26/24-1 1000BJ 514256BJ 514100BJ 514400BJ 5117400 sem 2500 7212 tube
HYB39S16400T

Abstract: hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM
Text: {4kilI HYB5116405BJ(4k)| I HYB 5117400BJ (2k) 1 1 HYB 5117405BJ (2k)| [ HYB 5117800BSJ (2k) 11HYB


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PDF 256kX 314100BJ/BJL 314400BJ/BJL HYB314405BJ/BJL 314171BJ/BJL 314175BJ/BJL 514100BJ/BJL 514400BJ/BJL 514405BJ/BJL 314265BJ/BJL HYB39S16400T hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM
Not Available

Abstract: No abstract text available
Text: 5116405BJ-60 HYB 5116405BJ-70 HYB 5117405BJ-50 HYB 5117405BJ-60 HYB 5117405BJ-70 Pin Names A0-A11 A0-A9 A0-A10 , (HYB 5116405BJ-70) max. 660 mW active (HYB 5117405BJ-50 ) max. 605 mW active (HYB 5117405BJ-60 ) max. 550 mW active (HYB 5117405BJ-70 ) 11 mW standby (TTL) 5.5 mW standby (MOS) · Output unlatched at cycle end , HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 · Single + 5 V (± 10 %) supply · Low power , 2048 refresh cycles / 32 ms for HYB 5117405BJ /BT (2k-Refresh) · Plastic Package: P-SOJ-26/24 (300 mil


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PDF 5116405BJ 5117405BJ 5116405BJ-50) 5116405BJ-60) 5116405BJ-70) 5117405BJ-50) 5117405BJ-60) 5117405BJ-70) 405BJ-50/-60/-70 85max
Not Available

Abstract: No abstract text available
Text: . 440 mW active (HYB 5116405BJ-70) max. 660 mW active (HYB 5117405BJ-50 ) max. 605 mW active (HYB 5117405BJ-60 ) ‘ max. 550 mW active (HYB 5117405BJ-70 ) 11 mW standby (TTL) 5.5 mW standby (MOS) â , Q67100-Q1100 P-SOJ-26/24 300 mil DRAM (access time 70 ns) HYB 5117405BJ-50 Q67100-Q1101 P-SOJ-26/24 300 mil DRAM (access time 50 ns) HYB 5117405BJ-60 Q67100-Q1102 P-SOJ-26/24 300 mil DRAM (access time 60 ns) HYB 5117405BJ-70 Q67100-Q1103 P-SOJ-26/24 300 mil DRAM (access


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PDF 5116405BJ 5117405BJ 5116405BJ-50) 5116405BJ-60) 5116405BJ-70) fi23Sb05 405BJ-50/-60/-70 P-SOJ-26/24 BI24X A535b05
Not Available

Abstract: No abstract text available
Text: organized as 8 388 608 words by 32bit in a 72-pin single-in-line package com prising sixteen HYB 5117405BJ


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PDF 32-Bit HYM328025S/GS-50/-60 -72-1rs 328025S/GS-50/-60
Not Available

Abstract: No abstract text available
Text: a 72-pin single-in-line package comprising eight HYB 5117405BJ 4M x 4 EDO-DRAMs and four HYB


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PDF 36-Bit 364025S/GS-50/-60 L-SIM-72-12 S235L
SIEMENS BST

Abstract: vhca TAE 1102 SIEMENS BST N 35 SIEMENS BST h 05 90 1R72 SIEMENS BST F 05 1CC3
Text: data are 2 4 V and 0.4 V. 8 SIEMENS Table 4: AC CHAP ACTER ISTI CS HYB 5117405BJ /BT 4M x 4 DRAM 2k


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PDF
1995 - IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 KM4232W259Q60 GM72V1682 IBM025171LG5D-70 KM44S4020AT KM416S1120A
Text: (-60) HYB 5116405BJ/BTEDO w/4k refresh 16M 50/-60/-70 HYB (6405) or 2k 5117405BJ /BT-50/-60/-


Original
PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 KM4232W259Q60 GM72V1682 IBM025171LG5D-70 KM44S4020AT KM416S1120A
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