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5117405

Abstract: No abstract text available
Text: Description ADE-203-633A (Z) Rev. 1.0 Oct. 14,1996 The Hitachi HM5116405 Series, H M 5117405 Series are , high performance and low power. The HM5116405 Series, H M 5117405 Series offer Extended Data Out (EDO , mW (max) (H M 5117405 Series) - Standby mode : · · 11 mW (max) :0.83 mW (max) (L-version) EDO page , (L-version) - 2048 refresh cycles : 32 ms (H M 5117405 Series) : 128 ms (L-version) · 3 variations of , Scries Pin Arrangement H M 5117405S /LS Series HM5117405TS/LTS Series - ^ v cc 1/01 I/02 We RAS


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PDF HM5116405 HM5117405 304-word ADE-203-633A 26-pin ns/70 5117405
Not Available

Abstract: No abstract text available
Text: HM5117405S/LS Series H M 5117405TS /LTS Series -i U 26 v ss 1/01 2 25 I/0 4 , ) (HM5117405 Series) HM 5117405 -6 -7 Parameter Symbol Min Max Min Max Unit Test , ) Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters) HM 5116405/HM 5117405 -6 , time from Din 11 HITACHI HM5116405 Series, HM5117405 Series Read Cycle HM 5116405/HM 5117405 , Write Cycle HM 5116405/HM 5117405 -7 -6 Parameter Symbol Min Max Min Max Unit


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PDF HM5116405 HM5117405 304-word ADE-203-633A 304-word 26-pin
Not Available

Abstract: No abstract text available
Text: M SM 5117405 MSM 5117405 MSM 5117405 B-50 B-60 B-70 Unit Note Min. Output High Voltage , ) (Vcc = 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3 , 1 2 , 1 3 Param eter Symbol MSM 5117405 M , 0°C to 70°C) Note 1, 2, 3 , 1 2 , 1 3 Param eter Symbol MSM 5117405 M SM 5117405 MSM 5117405 B-50 B-60 B-70 Unit Note Min. Read Command Set-up Time Max. Min. Max. Min


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PDF 17405B_ E2G0039-17-41 304-Word MSM5117405B /24-pin
Not Available

Abstract: No abstract text available
Text: 5116405BJ-60 HYB 5116405BJ-70 HYB 5117405BJ-50 HYB 5117405BJ-60 HYB 5117405BJ-70 Pin Names A0-A11 A0-A9 A0-A10 , (HYB 5116405BJ-70) max. 660 mW active (HYB 5117405BJ-50 ) max. 605 mW active (HYB 5117405BJ-60 ) max. 550 mW active (HYB 5117405BJ-70 ) 11 mW standby (TTL) 5.5 mW standby (MOS) · Output unlatched at cycle end , HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 · Single + 5 V (± 10 %) supply · Low power , 2048 refresh cycles / 32 ms for HYB 5117405BJ /BT (2k-Refresh) · Plastic Package: P-SOJ-26/24 (300 mil


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PDF 5116405BJ 5117405BJ 5116405BJ-50) 5116405BJ-60) 5116405BJ-70) 5117405BJ-50) 5117405BJ-60) 5117405BJ-70) 405BJ-50/-60/-70 85max
Not Available

Abstract: No abstract text available
Text: . 440 mW active (HYB 5116405BJ-70) max. 660 mW active (HYB 5117405BJ-50 ) max. 605 mW active (HYB 5117405BJ-60 ) ‘ max. 550 mW active (HYB 5117405BJ-70 ) 11 mW standby (TTL) 5.5 mW standby (MOS) â , Q67100-Q1100 P-SOJ-26/24 300 mil DRAM (access time 70 ns) HYB 5117405BJ-50 Q67100-Q1101 P-SOJ-26/24 300 mil DRAM (access time 50 ns) HYB 5117405BJ-60 Q67100-Q1102 P-SOJ-26/24 300 mil DRAM (access time 60 ns) HYB 5117405BJ-70 Q67100-Q1103 P-SOJ-26/24 300 mil DRAM (access


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PDF 5116405BJ 5117405BJ 5116405BJ-50) 5116405BJ-60) 5116405BJ-70) fi23Sb05 405BJ-50/-60/-70 P-SOJ-26/24 BI24X A535b05
1998 - 5117405

Abstract: No abstract text available
Text: DRAM (access time 70 ns) HYB 5117405BJ-50 Q67100-Q1101 P-SOJ-26/24 300 mil DRAM (access time 50 ns) HYB 5117405BJ-60 Q67100-Q1102 P-SOJ-26/24 300 mil DRAM (access time 60 ns) HYB 5117405BJ-70 Q67100-Q1103 P-SOJ-26/24 300 mil DRAM (access time 70 ns) HYB 5117405BT-50 on request P-TSOPII-26/24 300mil DRAM (access time 50 ns) HYB 5117405BT-60 on request P-TSOPII-26/24 300mil DRAM (access time 60 ns) HYB 5117405BT-70 on request P-TSOPII


Original
PDF HYB5116405BJ/BT HYB5117405BJ/BT HYB5116405BJ/BT-50) HYB5116405BJ/BT-60) HYB5116 405BJ/BT-50/-60/-70 GPJ05628 P-TSOPII-26/24 300mil) GPX05857 5117405
1996 - 5117405

Abstract: smd code Wl3 5117405BJ-60
Text: DRAM (access time 70 ns) HYB 5117405BJ-50 Q67100-Q1101 P-SOJ-26/24 300 mil DRAM (access time 50 ns) HYB 5117405BJ-60 Q67100-Q1102 P-SOJ-26/24 300 mil DRAM (access time 60 ns) HYB 5117405BJ-70 Q67100-Q1103 P-SOJ-26/24 300 mil DRAM (access time 70 ns) HYB 5117405BT-50 on request P-TSOPII-26/24 300mil DRAM (access time 50 ns) HYB 5117405BT-60 on request P-TSOPII-26/24 300mil DRAM (access time 60 ns) HYB 5117405BT-70 on request P-TSOPII


Original
PDF HYB5116405BJ/BT HYB5117405BJ/BT HYB5116405BJ/BT-50) HYB5116405BJ/BT-60) HYB53 HYB5116 405BJ/BT-50/-60/-70 GPJ05628 P-TSOPII-26/24 300mil) 5117405 smd code Wl3 5117405BJ-60
hm5x1

Abstract: No abstract text available
Text: ADE-203-633 C (Z) Rev. 3.0 Feb. 27, 1997 The Hitachi H M 5116405 Series, HM 5117405 Series are CMOS , mW (max) (H M 5117405 Series) - Standby mode : · · 11 mW (max) : 0.83 mW (max) (L-version) EDO page , (L-version) - 2048 refresh cycles : 32 ms (H M 5117405 Series) : 128 ms (L-version) · 3 variations o f , (H M 5117405 Series) Parameter Refresh period Refresh period (L-version) Symbol W W f Max 32 128 , HM5116405TS/LTS Series HM 5117405TS /LTS Series (TTP-26/24DA) U n it: mm 9.22 í 0.2. H ojoso i 1.15 Max


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PDF HM5116405 HM5117405 304-word ADE-203-633 26-pin ns/60 ns/70 hm5x1
Nippon capacitors

Abstract: No abstract text available
Text: HB56U832 Series, HB56U432 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI Description ADE-203-736A (Z) Rev.1.0 Feb. 7, 1997 The HB56U832 is a 8M x 32 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (H M 5117405 ) sealed in SOJ package. The HB56U432 is a 4M x 32 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM (H M 5117405 ) sealed in SOJ package. The HB56U832, HB56U432 offer Extended Data Out (EDO) Page Mode as


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PDF HB56U832 HB56U432 608-word 32-bit 304-word ADE-203-736A 16-Mbit Nippon capacitors
5116405

Abstract: Nippon capacitors
Text: o A 0 - A W E N o te : D O - D 7 MO M 3 : H M 5117405 : H M 514105 10 · - - , Change of Subtitle (referred to HM 5116405/H M 5117405 Series Rev. 3.0) T. Sato K. Tsuneda 24


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PDF HB56E836 36-bit, HB56E436 ADE-203-673A 16-Mbit HM5117405) HM514105) 5116405 Nippon capacitors
Not Available

Abstract: No abstract text available
Text: H M 5116405-5 Series Y. Kasama Y. Matsuno Addition of H M 5117405-5 Series Power , HITACHI HM5116405 Series, HM5117405 Series Pin Arrangement HM5117405S/LS Series HM 5117405TS /LTS , /495/440 mW (max) (H M 5117405 Series) DC Characteristics (H M 5116405 Series) lC 7 m ax:110/100 mA to 80/70/65 mA C DC Characteristics (H M 5117405 Series) IC 1 max: C lC 3 max: C lC 6 max: C


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PDF HM5116405 HM5117405 304-word ADE-203-633 304-word 26-pin
Not Available

Abstract: No abstract text available
Text: Vcc —I- ► DO to D7 *D0 to D7 : H M 5117405 ^ C O to C15 V ss


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PDF HB56U432B/SB-6BN/7BN/8BN 304-word 32-bit ADE-203-558 HB56U432 HM5117405BS) 16-Mbit 72-pin
Not Available

Abstract: No abstract text available
Text: CAS 1/01 to I/0 4 D14 DO to D15 Vnn ' T X *D0 to D15 : H M 5117405 DO to D15


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PDF HB56U832B/SB-6BN/7BN/8BN 608-word 32-bit ADE-203-557 HB56U832 16-Mbit HM5117405BS) 72-pin
Not Available

Abstract: No abstract text available
Text: 5117405 "X C 0toC1 5 X HITACHI 863 HB56U432B/SR-6BN/7BN/8BN Absolute Maximum Ratings


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PDF HB56U432B/SB-6BN/7BN/8BN 304-word 32-bit ADE-203-558 HB56U432 16-Mbit HM5117405BS) 72-pin
Not Available

Abstract: No abstract text available
Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO) HYB 5116405BJ-50/-60 HYB 5117405BJ-50 /-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information â , Information Type Ordering Code Package Descriptions 2k-Refresh Versions: HYB 5117405BJ-50 Q67100-Q1101 P-SOJ-26/24-1 300 mil 5 V 50 ns EDO-DRAM HYB 5117405BJ-60 Q67100-Q1102 P-SOJ , HYB 3116405 -50 -60 HYB 5117405 -50 -60 -50 -60 5 V ± 10% 3.3 V ± 0 .3 V 5


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PDF 5116405BJ-50/-60 5117405BJ-50/-60 3116405BJ/BT 3117405BJ/BT-50/-60 -5J-26/24-1 300mil) 405BJ-50/-60 405BJ/BT
Not Available

Abstract: No abstract text available
Text: /01 to I/0 4 ÜË AO to A10 WE DO to D15 DO to D15 *D0 to D15 : HM 5117405 Vcc V SS T X


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PDF HB56U832B/SB-6BN/7BN/8BN 608-word 32-bit ADE-203-557 HB56U832 16-Mbit HM5117405BS) 72-pin
Not Available

Abstract: No abstract text available
Text: DQ34 < i ' « 70 - - i- r C A S RAS M3 DQ35 < A 0 -A 1 O WE Note: DO - D7 :HM 5117405 MO -


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PDF HB56E836 HB56E436 8388608-word 36-bit 4194304-word ADE-203-673 16-Mbit HM5117405)
Not Available

Abstract: No abstract text available
Text: - D 0 - D7, M 0 - M3 WE N ote: D O - D7 : HM 5117405 MO - M3 : HM 514105 W Vcc W vss · A 9 M ·


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PDF HB56E836 HB56E436 8388608-word 36-bit 4194304-word ADE-203-673 16-Mbit HM5117405)
Not Available

Abstract: No abstract text available
Text: HB56U832 Series, HB56U432 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-736A (Z) Rev. 1.0 Feb. 7, 1997 Description The HB56U832 is a 8M x 32 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM5117405) sealed in SOJ package. The HB56U432 is a 4M x 32 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM (HM 5117405 ) sealed in SOJ package. The HB56U832, HB56U432 offer Extended Data Out (EDO) Page


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PDF HB56U832 HB56U432 608-word 32-bit 304-word ADE-203-736A 16-Mbit HM5117405)
1998 - SPT0305

Abstract: Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
Text: 4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO) HYB 5116405BJ-50/-60 HYB 5117405BJ-50 /-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information · 4 194 304 , Descriptions HYB 5117405BJ-50 Q67100-Q1101 P-SOJ-26/24-1 300 mil 5 V 50 ns EDO-DRAM HYB 5117405BJ-60 Q67100-Q1102 P-SOJ-26/24-1 300 mil 5 V 60 ns EDO-DRAM HYB 3117405BJ-50 on request , : HYB 5116405 HYB 3116405 HYB 5117405 HYB 3117405 -50 -60 -50 -60 -50 -60 -50 -60


Original
PDF 5116405BJ-50/-60 5117405BJ-50/-60 3116405BJ/BT 3117405BJ/BT-50/-60 405BJ-50/-60 405BJ/BT P-TSOPII-26/24-1 GPX05857 SPT0305 Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
Not Available

Abstract: No abstract text available
Text: time Transition time (rise and fall) Refresh period for HYB5116405 Refresh period for HYB 5117405


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PDF 3116405BJ/BT 3117405BJ/BT 3117405BJ/BT-50) 3117405BJ/BT-60) 3117405BJ/BT-70) 3116405BJ/BT-50) 3116405BJ/BT-60) 405BJ/BT
Nippon capacitors

Abstract: No abstract text available
Text: (referred to HM 5116405/HM 5117405 rev. 2.0) Drawn by Approved by 27 HITACHI


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PDF HB56S864ES-6/7 608-word 64-bit ADE-203-780A HB56S864ES 16-Mbit 16-bit 74ABT16244) 20-bit Nippon capacitors
Not Available

Abstract: No abstract text available
Text: CAS U OUT RAS IV IJ D 0 - D 7, M 0 D 0 - D 7, M O N o te : D O - D7 : H M 5117405


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PDF HB56E836/HB56E436 HB56E836 36-bit, HB56E436 ADE-203-673A HB56E836 16-Mbit HM5117405) HM514105)
5117405BJ-50

Abstract: No abstract text available
Text: -Refresh Versions: HYB 5117405BJ-50 HYB 5117405BJ-60 HYB 3117405BJ-50 HYB 3117405BJ-60 HYB 3117405BT-50 HYB , 5117405BJ-50 /-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 ? H P C Hyper page mode (EDO) cycle time , HYB 5117405 -50 -60 HYB 3117405 -50 -60 Power supply Addressing Refresh L-version Active TTL


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PDF 5116405BJ-50/-60 5117405BJ-50/-60 3116405BJ/BT 3117405BJ/BT-50/-60 405BJ/BT 405BJ-50/-60 GPX05857 5117405BJ-50
671400H

Abstract: 27C256AG m5118160 4096A 4270-D 5118160 4165A BK 4367 101AG 514270
Text: 5117800 Series . 2-670 H M 5116405/H M 5117405 Series . 2-694 - H M 511 6405B /H M 5117405B Series . 2-725 - H M 511 6400/H M 5117 400 Series


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PDF 512kx8512k 28512A 674100H 671400H 8128B 1664H 9127H 8127H 27C256AG m5118160 4096A 4270-D 5118160 4165A BK 4367 101AG 514270
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