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Not Available

Abstract: No abstract text available
Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO) HYB 5116405BJ-50 /-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation • Performance: -50 -60 50 60 ns 13 15 ns ns ¿ A RAS , on request P-TSOPI1-26/24-1 300 mil 3.3 V 60 ns EDO-DRAM HYB 5116405BJ-50 067100-01098


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PDF 5116405BJ-50/-60 5117405BJ-50/-60 3116405BJ/BT 3117405BJ/BT-50/-60 -5J-26/24-1 300mil) 405BJ-50/-60 405BJ/BT
Not Available

Abstract: No abstract text available
Text: dissipation max. 550 mW active (HYB 5116405BJ-50 ) max. 495 mW active (HYB 5116405BJ-60) max. 440 mW active , high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116405BJ-50 HYB


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PDF 5116405BJ 5117405BJ 5116405BJ-50) 5116405BJ-60) 5116405BJ-70) 5117405BJ-50) 5117405BJ-60) 5117405BJ-70) 405BJ-50/-60/-70 85max
511000BJ-70

Abstract: Q67100-Q1101 514256BJ-70 361120S-70 5118165BSJ-60 5117405BJ-60 Q67100-Q727 hyb 511
Text: Components HYB 5116405BJ-50 HYB 5116405BJ-60 HYB 5116405BJ-70 HYB 5116405BT-50 HYB 5116405BT-60 HYB


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PDF 3116160BSJ-50 3116160BSJ-60 3116160BSJ-70 3116400BJ-50 3116400BJ-60 3116400BJ-70 3116400BT-50 3116400BT-60 3116400BT-70 3117400BJ-50 511000BJ-70 Q67100-Q1101 514256BJ-70 361120S-70 5118165BSJ-60 5117405BJ-60 Q67100-Q727 hyb 511
5117405BJ-50

Abstract: No abstract text available
Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO) Advanced Information · 4 194 304 words by 4-bit organization · 0 to 70 °C operating temperature · · Hyper Page Mode - EDO - operation Performance: -50 *R A C RAS access time *C A C CAS access time *A A *R C Access time from address Read/Write cycle time 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns HYB 5116405BJ-50 /-60 HYB , 5116405BJ-50 HYB 5116405BJ-60 HYB 3116405BJ-50 HYB 3116405BJ-60 HYB 3116405BT-50 HYB 3116405BT-60 0 6 71 00


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PDF 5116405BJ-50/-60 5117405BJ-50/-60 3116405BJ/BT 3117405BJ/BT-50/-60 405BJ/BT 405BJ-50/-60 GPX05857 5117405BJ-50
1998 - SPT0305

Abstract: Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
Text: 4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO) HYB 5116405BJ-50 /-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information · 4 194 304 words by 4-bit organization · 0 to 70 °C operating temperature · Hyper Page Mode - EDO - operation · Performance: -50 -60 tRAC RAS access time 50 60 ns tCAC CAS access time 13 15 ns , -Refresh Versions: 4k-Refresh Versions: HYB 5116405BJ-50 Q67100-Q1098 P-SOJ-26/24-1 300 mil 5 V 50 ns


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PDF 5116405BJ-50/-60 5117405BJ-50/-60 3116405BJ/BT 3117405BJ/BT-50/-60 405BJ-50/-60 405BJ/BT P-TSOPII-26/24-1 GPX05857 SPT0305 Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
3165805AT-60

Abstract: Q67100
Text: 5116400BJ-70 HYB 5116405BJ-50 HYB 5116405BJ-60 HYB 5116405BJ-70 HYB 5117400BJ-50 HYB 5117400BJ-60 HYB


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PDF 3116160BSJ-50 311616QBSJ-60 3116160BSJ-70 3116160BST-50 3116160BST-60 3116160BST-70 3116165BSJ-50 3116165BSJ-60 3116165BSJ-70 3116165BST-50 3165805AT-60 Q67100
Not Available

Abstract: No abstract text available
Text: power dissipation max. 550 mW active (HYB 5116405BJ-50 ) max. 495 mW active (HYB 5116405BJ-60) max , Descriptions HYB 5116405BJ-50 Q67100-Q1098 P-SOJ-26/24 300 mil DRAM (access time 50 ns) HYB


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PDF 5116405BJ 5117405BJ 5116405BJ-50) 5116405BJ-60) 5116405BJ-70) fi23Sb05 405BJ-50/-60/-70 P-SOJ-26/24 BI24X A535b05
Not Available

Abstract: No abstract text available
Text: 3116400BJ-60 HYB 3116400BJ-70 HYB 5116405BJ-50 HYB 5116405BJ-60 HYB 5116405BJ-70 HYB 5116400BT-50 HYB


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PDF 1000BJ-50 1000BJ-60 1000BJ-70 1000BJL-50 1000BJL-60 1000BJL-70 514256B-50 514256B-60 514256B-70 514256BJ-50
1998 - 5117405

Abstract: No abstract text available
Text: Package Descriptions HYB 5116405BJ-50 Q67100-Q1098 P-SOJ-26/24 300 mil DRAM (access time 50


Original
PDF HYB5116405BJ/BT HYB5117405BJ/BT HYB5116405BJ/BT-50) HYB5116405BJ/BT-60) HYB5116 405BJ/BT-50/-60/-70 GPJ05628 P-TSOPII-26/24 300mil) GPX05857 5117405
1996 - 5117405

Abstract: smd code Wl3 5117405BJ-60
Text: Package Descriptions HYB 5116405BJ-50 Q67100-Q1098 P-SOJ-26/24 300 mil DRAM (access time 50


Original
PDF HYB5116405BJ/BT HYB5117405BJ/BT HYB5116405BJ/BT-50) HYB5116405BJ/BT-60) HYB53 HYB5116 405BJ/BT-50/-60/-70 GPJ05628 P-TSOPII-26/24 300mil) 5117405 smd code Wl3 5117405BJ-60
Not Available

Abstract: No abstract text available
Text: HYB 5117400BJ-60 HYB 5117400BJ-70 HYB 5116405BJ-50 HYB 5116405BJ-60 HYB5116405BJ-70 HYB 5117405BJ-50


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PDF P-SOJ-26/20-5
1997 - HYB3117405

Abstract: HYB5116405 HYB5117405 HYB3116405
Text: 5116405BJ-50 Q67100- P-SOJ-26/24 300 mil 5V 50ns EDO-DRAM HYB 5116405BJ-60 Q67100- P-SOJ


Original
PDF HYB5116405BJ/BT-50/-60 HYB5117405BJ/BT-50/-60 HYB3116405BJ HYB3117405BJ HYB5116405 HYB3116405 HYB5117415 HYB5116 405BJ-50/-60 HYB3116 HYB3117405 HYB5116405 HYB5117405 HYB3116405
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