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PLZ22C-G3/H Vishay Semiconductors DIODE ZENER 500MW DO219AC
PLZ12C-G3/H Vishay Semiconductors DIODE ZENER 500MW DO219AC
PLZ13C-G3/H Vishay Semiconductors DIODE ZENER 500MW DO219AC
PLZ27C-G3/H Vishay Semiconductors DIODE ZENER 500MW DO219AC
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PLZ39A-HG3/H Vishay Semiconductors DIODE ZENER 39V 500MW DO219AC
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BZV55C1V3500MW Chip One Exchange 1,360 - -
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500MW Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2012 - 2G105J

Abstract: 2g272 2G682J MCRC100G100KB-RH
Text: , 2.7Ω, 500mW , 5% MCRC1/2G2R7JT-RH Resistor, Carbon, 75kΩ, 250mW, 5% MCRC1/4G753JT-RH Resistor, Carbon, 3Ω, 500mW , 5% MCRC1/2G3R0JT-RH Resistor, Carbon, 82kΩ, 250mW, 5% MCRC1/4G823JT-RH Resistor, Carbon, 3.3Ω, 500mW , 5% MCRC1/2G3R3JT-RH Resistor, Carbon, 100kΩ, 250mW, 5% MCRC1/4G104JT-RH Resistor, Carbon, 3.9Ω, 500mW , 5% MCRC1/2G3R9JT-RH Resistor, Carbon, 110kΩ, 250mW, 5% MCRC1/4G114JT-RH Resistor, Carbon, 4.7Ω, 500mW , 5% MCRC1/2G4R7JT


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PDF element14 2G105J 2g272 2G682J MCRC100G100KB-RH
2012 - RESISTOR

Abstract: MF-12
Text: /8W (125mW) 1.85 3.5 MF25 1/4W (250mW) 2.5 6.8 MF50 1/2W ( 500mW ) 3.5 , Resistor, 100K, 500mW , 1% MF50 100K Resistor, 500mW 1% 100K MF50 100K. www.element14.com , Leaded Description Resistor, 100R, 500mW , 1% Resistor, 10K, 500mW , 1% Part Number MF50 100R MF50 10K Resistor, 500mW 1% 10R MF50 10R Resistor, 500mW 1% 10R MF50 10R. Resistor, 500mW 1% 110K MF50 110K Resistor, 500mW 1% 110R MF50 110R Resistor, 500mW 1% 11K MF50 11K


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PDF element14 RESISTOR MF-12
1N3606

Abstract: 1N916B 1N916A 1N916 1N914B 1N914A 1N914 1N3604 1N3600 1N3064
Text: 4 4 P= 500mW 24G 1N914 SS 100 75 450 150 2 1 10 5 75 0. 9 4 2 4 P= 500mW 24B 1N914A a — A 100 75 450 150 2 1 30 0. 025 20 4 4 P= 500mW 24G 1N914A 100 75 450 150 2 1 20 5 75 0. 9 4 2 4 P= 500mW 24B 1N914B a — A 100 75 450 150 2 1 100 0. 025 20 4 4 P= 500mW 240 1N914B SS 100 75 450 150 2 1 100 5 75 0. 9 4 2 4 P= 500mW 24B 1N916 a — A 100 75 450 150 2 1 10 0.025 20 2 4 P= 500mW 24G 1N916 JRS 100 75 450 150 2 1 10 5 75 0. 9 2 2 4 P= 500mW Z4B 1N916A a â


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PDF 10kHz 1N914 500mW 1N914A 1N914A 1N914B 1N3606 1N916B 1N916A 1N916 1N3604 1N3600 1N3064
2005 - IR-Laser-Diode 808nm 300mw

Abstract: 808nm 500mw IR-Laser-Diode 500mW IR-Laser-Diode 808nm IR-Laser-Diode 808nm 300mw laser diode 808nm 300mW 8052-1313-AU 500MW ir laser
Text: 8052-1313-AU 808nm 500mW IR Laser Diodes AUTO PACKAGE Specifications Device Package Type , Conditions Characteristics Ith Threshold Current Iop Po= 500mW Operating Current Vop Po= 500mW Operating Voltage 200mW Slope Efficiency I( 500mW )-I(300mW) Monitor Current Beam Divergence , Accuracy Lasing Wavelength Im // // X Y Z Po= 500mW Po= 500mW Po= 500mW Po= 500mW Po= 500mW Po= 500mW Po= 500mW Po= 500mW Po= 500mW Units mW V V Min. - Typ. 250 800 1.9


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PDF 8052-1313-AU 808nm 500mW 500mW 200mW 300mW) IR-Laser-Diode 808nm 300mw 808nm 500mw IR-Laser-Diode 500mW IR-Laser-Diode 808nm IR-Laser-Diode 808nm 300mw laser diode 808nm 300mW 8052-1313-AU ir laser
2012 - MCF 0.5W 3K9

Abstract: MCF 2W 47K DLS12D1-O(M)0.25W CFR-50JT-52/220R
Text: Resistor, 500mW 5% 1M2 MCF 0.5W 1M2 Resistor, 250mW 5% 1M2 MCF 0.25W 1M2 Resistor, 250mW 5% 1M5 , Resistor, 2.2K, 500mW , 5% MCF 0.5W 2K2 Resistor, 500mW 5% 27R MCF 0.5W 27R Resistor, 500mW 5% 270R MCF 0.5W 270R Resistor, 500mW 5% 27K MCF 0.5W 27K Resistor, 500mW 5% 270K MCF 0.5W , , 250mW 5% 8M2 MCF 0.25W 8M2 Resistor, 250mW 5% 10M MCF 0.25W 10M Resistor, 500mW 5% 1M5 MCF 0.5W 1M5 Resistor, 500mW 5% 1M8 MCF 0.5W 1M8 Resistor, 500mW 5% 2M2 MCF 0.5W 2M2


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PDF 350PPM/Â -450PPM/Â -700PPM/Â -1500PPM/Â element14 MCF 0.5W 3K9 MCF 2W 47K DLS12D1-O(M)0.25W CFR-50JT-52/220R
1998 - XC6382A501PR

Abstract: XC6383E201M SOT895 XC6383A201M XC6383B301PR XC6382F501
Text: XC6381A201PR 2.0 10 0.9 500mW 155 13.7 70 SOT-89 0.57 XC6381A301MR 3.0 10 0.9 150mW 155 7.9 80 SOT-23 0.59 XC6381A301PR 3.0 10 0.9 500mW 155 7.9 80 SOT-89 0.57 XC6381A501MR 5.0 10 0.9 150mW 155 4.3 85 SOT-23 0.59 XC6381A501PR 5.0 10 0.9 500mW 155 4.3 85 SOT-89 0.57 External Transistor Drive 2.0V ­ 7.0V Available XC6381B201MR 2.0 10 0.9 150mW 155 210 70 SOT-23 0.59 XC6381B201PR 2.0 10 0.9 500mW 155 210 70 SOT-89 0.57 XC6381B301MR 3.0 10 0.9 150mW 155 114 80 SOT-23 0.59 XC6381B301PR 3.0 10 0.9 500mW 155 114 80 SOT-89 0.57


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PDF XC638 100KHz XC6381 XC6382 XC6383 XC6385 OT-25 OT-89 OT-89-5 XC6382A501PR XC6383E201M SOT895 XC6383A201M XC6383B301PR XC6382F501
IN916B

Abstract: 1N916B 1N914B 1N914A 1N914 1N3604 1N3600 1N3064 1N3063 in916
Text: 4 4 P= 500mW 24G 1N914 SS 100 75 450 150 2 1 10 5 75 0. 9 4 2 4 P= 500mW 24B 1N914A a — A 100 75 450 150 2 1 30 0. 025 20 4 4 P= 500mW 24G 1N914A 100 75 450 150 2 1 20 5 75 0. 9 4 2 4 P= 500mW 24B 1N914B a — A 100 75 450 150 2 1 100 0. 025 20 4 4 P= 500mW 240 1N914B SS 100 75 450 150 2 1 100 5 75 0. 9 4 2 4 P= 500mW 24B 1N916 a — A 100 75 450 150 2 1 10 0.025 20 2 4 P= 500mW 24G 1N916 JRS 100 75 450 150 2 1 10 5 75 0. 9 2 2 4 P= 500mW Z4B 1N916A a â


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PDF 10kHz 1N914 500mW 1N914A 1N914A 1N914B IN916B 1N916B 1N3604 1N3600 1N3064 1N3063 in916
Not Available

Abstract: No abstract text available
Text: °C 200mA 200mA 200mA 200mA 250mA 200mA 200mA 150mA 150mA 150mA 500mW 500mW 500mW 500mW 500mW 500mW 500mW 500mW 500mW 500mW 50nS 50nS 50nS 50nS 4.0nS 4.0nS 4.0nS 2.0nS


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PDF BAV100 BAV102 LL914 LL4148 LL4150 LL4151 LL4154 LL4448 LL101A LL101B
in4152

Abstract: IN916B 1N3755 1N916A 1N916 1N914B 1N914A 1N914 1N3604 1N3600
Text: 4 4 P= 500mW 24G 1N914 SS 100 75 450 150 2 1 10 5 75 0. 9 4 2 4 P= 500mW 24B 1N914A a — A 100 75 450 150 2 1 30 0. 025 20 4 4 P= 500mW 24G 1N914A 100 75 450 150 2 1 20 5 75 0. 9 4 2 4 P= 500mW 24B 1N914B a — A 100 75 450 150 2 1 100 0. 025 20 4 4 P= 500mW 240 1N914B SS 100 75 450 150 2 1 100 5 75 0. 9 4 2 4 P= 500mW 24B 1N916 a — A 100 75 450 150 2 1 10 0.025 20 2 4 P= 500mW 24G 1N916 JRS 100 75 450 150 2 1 10 5 75 0. 9 2 2 4 P= 500mW Z4B 1N916A a â


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PDF 10kHz 1N914 500mW 1N914A 1N914A 1N914B in4152 IN916B 1N3755 1N916A 1N916 1N3604 1N3600
R25-5D16-24

Abstract: R25-1D16-24 R25-11D10-24 R25-11D10-12 Transistor R25 R25-5D16-12 R25-11D10-5/6 R25-11D10-48 R25-11A10-120 R25-1D16-12
Text: Power: See Chart 68 500mW 16A D39b SPST-NO 270 500mW 16A D39b SPST-NO 1100 500mW 16A D39b 48VDC SPST-NO 4200 500mW 16A D39b R25-5D16-5/6 5/6VDC SPDT 68 500mW 16A D39a R25-5D16-12 12VDC SPDT 270 500mW 16A D39a R25-5D16-24 24VDC SPDT 1100 500mW 16A D39a R25-5D16-48 48VDC SPDT 4200 500mW 16A D39a R25-11D10-5/6 5/6VDC DPDT 68 500mW 10A D39a


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PDF 28VDC 120VAC R25-5A16-24 24VAC R25-11D10-24 24VDC 500mW R25-11D10-48 48VDC R25-5D16-24 R25-1D16-24 R25-11D10-24 R25-11D10-12 Transistor R25 R25-5D16-12 R25-11D10-5/6 R25-11D10-48 R25-11A10-120 R25-1D16-12
zener diode 4.7V

Abstract: zener 8v diode zener diode 6.8v zener 18V Zener 5.1V zener 6v diode MicroPak-10 6v Zener diode zener 4.7v fxl4t245bqx
Text: Fairchild Kits available thru Digi-Key Digi-Key Part Number: DIODESKITFS-ND 500MW Zener Diodes 1N5221B 1N5229BTR 1N5230BTR Description ZENER 2.4V 5% 500MV 4.3V 500MW 5% ZENER, DO35 4.7V 500MW 5% ZENER, DO35 Pkg DO-35 DO-35 DO-35 Parts per Kit 5 5 5 1N5231BTR 1N5232BTR 5.1V 500MW 5% ZENER, DO35 5.6V 500MW 5% ZENER, DO35 DO-35 DO-35 5 5 1N5233BTR 1N5235BTR 1N5236BTR 6V 500MW 5% ZENER, DO35 6.8V 500MW 5% ZENER, DO35 7.5V 500MW 5% ZENER, DO35 DO-35 DO-35 DO


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PDF 500MW 1N5221B 1N5229BTR 1N5230BTR 500MV DO-35 zener diode 4.7V zener 8v diode zener diode 6.8v zener 18V Zener 5.1V zener 6v diode MicroPak-10 6v Zener diode zener 4.7v fxl4t245bqx
1998 - 8A SOT-89

Abstract: 8E sot-89 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-25 XC6368A332MR XC6371B301 XC6372E501P XC6372A301PR
Text: Step-Up 2.0V ­ 7.0V Available XC6371A301PR 3.0 0.9 ~ 10 500mW 100 87 ­ 2.4 85 SOT-89 0.60 XC6371A501PR 5.0 0.9 ~ 10 500mW 100 87 ­ 2.4 85 SOT-89 0.60 XC6371B301PR 3.0 0.9 ~ 10 500mW 100 87 ­ 62.5 85 SOT-89 0.60 XC6371B501PR 5.0 0.9 ~ 10 500mW 100 87 ­ 62.5 85 SOT-89 0.60 XC6371C301PR 3.0 0.9 ~ 10 500mW 100 87 ­ 2.4 85 SOT-89-5 0.60 XC6371C501PR 5.0 0.9 ~ 10 500mW 100 87 ­ 2.4 85 SOT-89-5 0.60 XC6371D301PR 3.0 0.9 ~ 10 500mW 100 87 ­ 62.5 85 SOT-89-5 0.60 XC6371D501PR 5.0 0.9 ~ 10 500mW 100 87 ­ 62.5 85 SOT


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PDF XC6367, XC6368, XC6371, XC6372, XC6373 30KHz, 50KHz, 100KHz, 180KHz, 300KHz 8A SOT-89 8E sot-89 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-25 XC6368A332MR XC6371B301 XC6372E501P XC6372A301PR
A642 transistor pnp

Abstract: a603 transistor transistor A608 A608 transistor pnp A608 N A608 A1480 A641 transistor A641 NPN transistor A642 transistor to 92
Text: D12E109 6 6 fi N-PL N-PL N-PL s s fi L1 7f L2b L2d Ptfboth sides)- 500mW ;hFE1/2-.60 min;VBE(1-2)-15mV max , ,1.0 max;VBE(1-2)-15mV max;Pc- 500mW both. VCE0-15V max;hFE-30 min. at 10mA;AhFE-20%;AVBE±5.0mV. Pt , 500mW :IDSS 1/2 1.0max;VGS(1-2)2.0mVmax:IG(1-2)10nA max;Yfs 1-2 1.0 max. 79 80 81 FM1101* FM 1102* FMI 103* 6 6 fi N0 N0 N0 s s fi L74 L74 L74 Pd 500mW ;IDSS 1/2 I.Omax; VGS(1-2)5.0mVmax;IG(1-2)10nA max;Yfs 1/2 1.0 max. Pd 500mW ;IDSS 1/2 1.0max;VGS(1-2)10mVmax;IG(1-2)10nAmax;Yfs 1/2 1.0 max. Pd 500mW


OCR Scan
PDF diff103 FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V A642 transistor pnp a603 transistor transistor A608 A608 transistor pnp A608 N A608 A1480 A641 transistor A641 NPN transistor A642 transistor to 92
R25-11D10-24

Abstract: R25-11D10-12 R25-1D16-24 R25-5D16-24 R25-11D10-48 11A10 r25-5d16-48 R25-1D16-12 5A16 1D16
Text: Power: See Chart 68 500mW 16A D39b SPST-NO 270 500mW 16A D39b SPST-NO 1100 500mW 16A D39b 48VDC SPST-NO 4200 500mW 16A D39b R25-5D16-5/6 5/6VDC SPDT 68 500mW 16A D39a R25-5D16-12 12VDC SPDT 270 500mW 16A D39a R25-5D16-24 24VDC SPDT 1100 500mW 16A D39a R25-5D16-48 48VDC SPDT 4200 500mW 16A D39a R25-11D10-5/6 5/6VDC DPDT 68 500mW 10A D39a


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PDF 28VDC 120VAC R25-5A16-24 24VAC R25-11D10-12 12VDC 500mW R25-11D10-24 24VDC R25-11D10-24 R25-11D10-12 R25-1D16-24 R25-5D16-24 R25-11D10-48 11A10 r25-5d16-48 R25-1D16-12 5A16 1D16
2002 - Fiber-Bragg-Grating

Abstract: 980nm 500mw 980NM ML861E5S laser diode 980nm single mode
Text: ML8xx5 (980nm High Power LD) FEATURES DESCRIPTION High Power (CW 500mW ) ML8xx5 series are , 980nm and Ridge waveguide with window structure standard continuous light output of @ 500mW , and , Threshold current CW - 110 150 mA Iop Operation current CW,Po= 500mW - 680 730 mA Vop Operating voltage CW,Po= 500mW - 2.1 2.5 V c Center wavelength CW,Po= 500mW 970 980 990 nm Spectral width (RMS , -20dB) CW,Po= 500mW , RMS -


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PDF 980nm 500mW) 500mW, 13MAX Fiber-Bragg-Grating 980nm 500mw ML861E5S laser diode 980nm single mode
R25-5D16-24

Abstract: R25-1D16-24 R25-11D10-24 R25-11D10-12 R25-5D16-12 R25-1D16-12 R25-11A10-24 R25-11D10-48 D39B 5A16
Text: 68 500mW 16A D39b NTE Type No. DC OPERATED R25-1D16-5/6 5/6VDC SPST-NO R25-1D16-12 12VDC SPST-NO 270 500mW 16A D39b R25-1D16-24 24VDC SPST-NO 1100 500mW 16A D39b R25-1D16-48 48VDC SPST-NO 4200 500mW 16A D39b R25-5D16-5/6 5/6VDC SPDT 68 500mW 16A D39a R25-5D16-12 12VDC SPDT 270 500mW 16A D39a R25-5D16-24 24VDC SPDT 1100 500mW 16A D39a R25-5D16-48 48VDC SPDT


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PDF 28VDC 120VAC R25-5A16-24 24VAC R25-11D10-48 R95-132 R95-131 R25-5D16-24 R25-1D16-24 R25-11D10-24 R25-11D10-12 R25-5D16-12 R25-1D16-12 R25-11A10-24 R25-11D10-48 D39B 5A16
Not Available

Abstract: No abstract text available
Text: Fairchild Kits available through Digi-Key Digi-Key Part Number: DIODESKITFS-ND 500MW Zener Diodes Description PKG parts per kit 1N5229BTR 4.3V 500MW 5% ZENER, DO35 DO-35 10 1N5230BTR 4.7V 500MW 5% ZENER, DO35 DO-35 10 1N5231BTR 5.1V 500MW 5% ZENER, DO35 DO-35 10 1N5232BTR 5.6V 500MW 5% ZENER, DO35 DO-35 10 1N5235BTR 6.8V 500MW 5% ZENER, DO35 DO-35 10 1N5239BTR 9.1V 500MW 5% ZENER, DO35 DO-35 10 1N5240BTR 10V 500MW 5


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PDF 500MW 1N5229BTR DO-35 1N5230BTR 1N5231BTR
2009 - Not Available

Abstract: No abstract text available
Text: : Laser Diode (2) Structure: TO-5(ψ9.0mm ),With Pb free glass cap, PD (3) Power Output: 500mW , Min. Typ. Max. Threshold Current Ith Po= 500mW 110 130 Operating Current Iop Po= 500mW 570 600 Operating Voltage Vop Po= 500mW 2.0 2.1 375mW-125mW Slope Efficiency 0.8 1.1 η I375 mW-I125 mW Monitor Current Im Po= 500mW 0.6 2.5 Beam Divergence Parallel θ// Po= 500mW 11 (FWHM) Perpendicular θ⊥ Po= 500mW 38 Lasing Wavelength* λ Po= 500mW 803 808 811 ◎θ// and θ⊥ are


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PDF 808nm LCU80E041A-preliminary 500mW lcu80e041a
HLDH-808-B50001

Abstract: HLDH-808-B-500-01 500MW
Text: Unit Threshold Current Ith - - 0.18 0.3 A Operating Current Lop Po= 500mW - 0.75 1.2 A Operating Voltage Vop Po= 500mW - 2.1 3.0 V Po= 500mW 0.5 0.9 - W/A Lm Po= 500mW , VRD=10V 0.15 0.8 3.0 mA Beam Divergence (FWHM) Parallel Perpendicular // Po= 500mW 4 9 17 Degree Po= 500mW 20 30 40 Degree Perpendicular Deviation Angle Po= 500mW Degree Po= 500mW - +3 x


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PDF HLDH-808-B-500-01 500mW 500mW, HLDH-808-B50001 HLDH-808-B-500-01 500MW
808nm laser

Abstract: 808nm 500mw 808nm 500mW laser diode 9mm
Text: laser diodes 808nm OED-LDH8004F OED-LDH8005F Features · · · · LUMEX Visible lig h t: X - 808 nm (Typ.) Output power: 200mW/ 500mW , CW High Efficiency MOCVD Quantum Well Design Standard TO-5 package (9mm 0 ) Applications · Diode pump solid state laser · Medical instrument Parameters Optical Power (mW) Operating Temperature (°C) Storage Temperature (°C) LD Reverse Voltage (V) PD Reverse , Condition 813 200 800 2.8 1.0 6.3 Po= 500mW Po= 500mW Po= 500mW , FWHM Po= 500mW CW Po= 500mW Po= 500mW 805 0.4


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PDF 808nm OED-LDH8004F OED-LDH8005F 200mW/500mW, OED-LDH8004F OED-LDH8005F 200mW 808nm laser 808nm 500mw 808nm 500mW laser diode 9mm
1990 - CSAC 2.00 MGC

Abstract: LFSN25N19C2450B DFC22R45P100LHA MQW1 CE053R836DCB LFTC10N19C0924B lmc36-07a0505a lfl30 lmc36 DFC31R84P075LHA
Text: . 30.0 1350e1425 50 25.0 2300e5000 500mW 5 0 f57.5 F 5.7g4.6g2 1.0 2.0 15 , 50 15.0 978e1003 500mW 2nd IF dB max. dB max. sec. max. kHz dB , 11.0 1394e1805 14.0 1805e1880 500mW LFSN25N18C1842B 1842.5 F0 f37.5 2.5 1.0 2.0 52 0e600 3.2g2.5g1.6 max. 52 1375e1450 50 37 2905e1315 500mW 942.5 F0 f17.5 3.7 , f 30.0 2.2 1.0 2.0 40.0 1400 40.0 1640 4.5g3.2g1.6 max. 50 500mW


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PDF K09-5webPDF K09J5 DCS1800 ISM2400 IS136) CDMA800 ISM900 PDC800 CSAC 2.00 MGC LFSN25N19C2450B DFC22R45P100LHA MQW1 CE053R836DCB LFTC10N19C0924B lmc36-07a0505a lfl30 lmc36 DFC31R84P075LHA
A642 transistor pnp

Abstract: BC150 transistor A641 TRANSISTOR A641 NPN transistor TRANSISTOR 2SC870 TRANSISTOR A642 2SC650 TRANSISTOR AT316 A642 transistor to 92 2SC871
Text: -.10mA. 61 62 63 D12A8 012E026 D12E109 6 6 fi N-PL N-PL N-PL s s fi L1 7f L2b L2d Ptfboth sides)- 500mW ;hFE1 , T01 8 hFE 1/2-.60 min,1.0 max;VBE(1-2)-15mV max;Pc- 500mW both. VCE0-15V max;hFE-30 min. at 10mA;AhFE , )-2.0mV;AVGS(1-2)/AT-50uV/'C. Pd 500mW :IDSS 1/2 1.0max;VGS(1-2)2.0mVmax:IG(1-2)10nA max;Yfs 1-2 1.0 max. 79 80 81 FM1101* FM 1102* FMI 103* 6 6 fi N0 N0 N0 s s fi L74 L74 L74 Pd 500mW ;IDSS 1/2 I.Omax; VGS(1-2)5.0mVmax;IG(1-2)10nA max;Yfs 1/2 1.0 max. Pd 500mW ;IDSS 1/2 1.0max;VGS(1-2)10mVmax;IG(1-2)10nAmax


OCR Scan
PDF FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V FT4023 A642 transistor pnp BC150 transistor A641 TRANSISTOR A641 NPN transistor TRANSISTOR 2SC870 TRANSISTOR A642 2SC650 TRANSISTOR AT316 A642 transistor to 92 2SC871
2011 - 808nm 500mw laser diode

Abstract: No abstract text available
Text: 500mW ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbols , Conditions Min. Typ. Max. Ith Po= 500mW 110 130 Threshold Current Iop Po= 500mW 570 600 Operating Current Operating Voltage Vop Po= 500mW 2.0 2.1 375mW-125mW Slope Efficiency 0.8 1.1 η I375mW-I125mW Beam Divergence Parallel θ // Po= 500mW 11 (FWHM) Perpendicular θ ⊥ Po= 500mW 38 Lasing Wavelength* λ Po= 500mW 803 808 811 ◎θ // and θ ⊥ are defined as the angle within


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PDF 808nm LCU80E046D-preliminary 500mW lcu80e046d 808nm 500mw laser diode
808nm laser diode

Abstract: 808nm 808nm 500mw 300 mw IR Laser Diode 808nm 300 mw laser diode 808nm laser 820 nm laser diode 808 nm 1000 mw 808nm 500mw laser diode
Text: : 500mW External dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25 ) Parameter Symbols Optical , Current Ith Po= 500mW 110 130 Operating Current Iop Po= 500mW 570 600 Operating Voltage Vop Po= 500mW 2.0 2.1 375mW-125mW Slope Efficiency 0.8 1.1 I375 mW-I125 mW Monitor Current Im Po= 500mW 0.6 2.5 Beam Divergence Parallel // Po= 500mW 11 (FWHM) Perpendicular Po= 500mW 38 Lasing Wavelength* Po= 500mW 803 808 811 // and are defined as the angle within which the intensity is 50% of


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PDF U-LD-80E041A-preliminary 808nm 500mW 808nm laser diode 808nm 500mw 300 mw IR Laser Diode 808nm 300 mw laser diode 808nm laser 820 nm laser diode 808 nm 1000 mw 808nm 500mw laser diode
P1027

Abstract: RN1030 P1069E SD5011 UC-41 2N4088 K1502 2N3379 ML132A A641 NPN transistor
Text: N-PL N-PL N-PL s s fi L1 7f L2b L2d Ptfboth sides)- 500mW ;hFE1/2-.60 min;VBE(1-2)-15mV max. hFE1/2-.60 , ;VBE(1-2)-15mV max;Pc- 500mW both. VCE0-15V max;hFE-30 min. at 10mA;AhFE-20%;AVBE±5.0mV. Pt-300mW both , 500mW :IDSS 1/2 1.0max;VGS(1-2)2.0mVmax:IG(1-2)10nA max;Yfs 1-2 1.0 max. 79 80 81 FM1101* FM 1102* FMI 103* 6 6 fi N0 N0 N0 s s fi L74 L74 L74 Pd 500mW ;IDSS 1/2 I.Omax; VGS(1-2)5.0mVmax;IG(1-2)10nA max;Yfs 1/2 1.0 max. Pd 500mW ;IDSS 1/2 1.0max;VGS(1-2)10mVmax;IG(1-2)10nAmax;Yfs 1/2 1.0 max. Pd 500mW


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PDF NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V P1027 RN1030 P1069E SD5011 UC-41 2N4088 K1502 2N3379 ML132A A641 NPN transistor
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