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3M Interconnect
661X 15.0 MICRON DISC 3M Diamond Lapping Film 661X, 15.0 Micron Disc, 8 In X Nh, 25/Inner, 250/Case |3M 661X 15.0 MICRON DISC
661X 15.0 MICRON DISC ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark 661X 15.0 MICRON DISC Bulk 0 25 - - $29.57 $28.57 $28.57 More Info
3M Interconnect
661X 0.50 MICRON DISC 3M Diamond Lapping Film 661X, 0.50 Micron Disc, 8 In X Nh, 25/Inner, 250/Case |3M 661X 0.50 MICRON DISC
661X 0.50 MICRON DISC ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark 661X 0.50 MICRON DISC Bulk 0 25 - - $29.57 $28.57 $28.57 More Info

50-micron Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - MH8S64AQFC -7

Abstract: M5M51008CFP-70HI sop-32 pin Shipping Trays S1912 M5M5V108DFP-70HI jeida dram 88 pin M5M465165 MH8S64AQFC-6 MH8S64DBKG-6 PC-100
Text: 8 32K x 8 32K x 8 32K x 8 32K x 8 32K x 8 32K x 8 Process Technology (5th Gen) .6 micron (5th Gen) .6 micron (5th Gen) .6 micron (5th Gen) .6 micron (5th Gen) .6 micron (5th Gen) .6 micron (5th Gen) .6 micron (5th Gen) .6 micron (5th Gen) .6 micron (5th Gen) .6 micron (5th Gen) .6 micron (5th Gen) .6 micron Access Time (ns) 55 Vcc (v) 5 55 5 70 5 70 , 32K x 8 Process Technology (5th Gen) .6 micron (5th Gen) .6 micron (5th Gen) .6 micron (5th


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2011 - patch cord

Abstract: LSZH PVFXL10-10M2 10M15
Text: iQ TM System PanView iQ TM Patch Cords Singlemode LSZH LC-LC: OM3 LC-LC 50 micron LSZH: PVF9L10 , LSZH LC-LC Patch Cord Singlemode LSZH LC-LC Patch Cord Singlemode LSZH LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord


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PDF PVF9L10-10MY PVFXL10-10MY 24-port PVSP12 WW-PVSP12 patch cord LSZH PVFXL10-10M2 10M15
2012 - patch cord

Abstract: No abstract text available
Text: iQ TM System PanView iQ TM Patch Cords Singlemode LSZH LC-LC: OM3 LC-LC 50 micron LSZH: TM , LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord


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PDF PVF9L10-10MY PVFXL10-10MY TIA/EIA-455-21A: PVSP72--WW-ENG WW-PVSP12 patch cord
Not Available

Abstract: No abstract text available
Text: ADVANCE MICRON I 8 MEG X MT32LD864A (X) 64 DRAM MODULE DRAM IW IÖ m V / U 8 , MT32LD864A (X) DM71 pmS - Rev 3/96 J I Micron Technobgy, In c , reserves the right 1o change products or specifications without notice ©1996, Micron Technology Inc LlllSMT DGlSbOE 3fi3 , nonvolatile storage device contains data programmed by Micron that identifies the module type and various DRAM , MT32LD864A (X) DM71 p m 5 -R e v 3/96 r \ ^ Micron Technology, Inc., reserves the right to change


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PDF MT32LD864A 168-pin, 249mW 048-cycle 0D15b31 168-PIN 15b3E
Not Available

Abstract: No abstract text available
Text: ADVANCE I MICRON TECHNOLOGY. INC. MT4LDT164H(X)(L), MT8LDT264H(X)(L) 1 MEG, 2 MEG x 64 DRAM , specifications without notics S1996. Micron Technology. Inc. ^ 1 1 1 5 4 *1 0015501 5b b ADVANCE , nonvolatile storage device contains data programmed by Micron that identifies the m odule type and various , MT4LDT164H(XXL), MT8LDT264H(X)(l) OM66.pmS - Rev. 3/96 rt C . Micron Technology, Inc., reserves th* right » ehango products or specifications without note«. V1&96, Micron TschnoJogy. Inc ^ 1 1 1 5 4 ^


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PDF MT4LDT164H MT8LDT264H 144-pin, 024-cycle 128ms MT4L0T164H
2012 - PVFXL10-10M1

Abstract: 24 port fiber patch panels 3M pvq-fmt ISO 11801 OM3 TIA-604-5
Text: iQ TM System PanView iQ TM Patch Cords Singlemode LSZH LC-LC: OM3 LC-LC 50 micron LSZH: TM , LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord 50 micron LSZH OM3 LC-LC Patch Cord


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PDF PVF9L10-10MY PVFXL10-10MY TIA/EIA-455-21A: PVSP12 WW-PVSP12 PVFXL10-10M1 24 port fiber patch panels 3M pvq-fmt ISO 11801 OM3 TIA-604-5
2005 - TN-46-11

Abstract: TN4611 sdram ddr
Text: 2 Micron 09005aef812507c7 TN4611.fm - Rev. A 7/05 EN 1 Micron Technology, Inc. ©2005 Micron Technology, Inc. All rights reserved. Micron Micron Micron TN , TN4611.fm - Rev. A 7/05 EN 2 Micron Technology, Inc. ©2005 Micron Technology, Inc. All rights , TN4611.fm - Rev. A 7/05 EN 3 Micron Technology, Inc. ©2005 Micron Technology, Inc. All rights


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PDF TN-46-11: 09005aef812507c7 TN4611 N-46-11: TN-46-11 sdram ddr
2012 - Not Available

Abstract: No abstract text available
Text: -1S1AA, MTFDEAK200MAS-1S1AA, MTFDEAK400MAS-1S1AA Features · · · · Micron ® 25nm MLC NAND Flash RoHS-compliant package , Warranty: Contact your Micron sales representative for further information regarding the product, including , and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron , Information Micron 's P410m SSD is available in different configurations and densities. Visit www.micron.com


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PDF P410m MTFDEAK100MAS-1S1AA, MTFDEAK200MAS-1S1AA, MTFDEAK400MAS-1S1AA 512-byte 128-entry 100GB 09005aef84be6ef8
dram 88 pin

Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 55E D MICRON I ■blllS4T 0DGSDb3 3T0 ■MRN MT12D88C25636 , Micron Technology, Inc. reserves the right to change products or specifications without notice. ©1992, Micron Technology, Inc. ■I DRAM CARD C • JEIDA, JEDEC and PCMCIA standard 88-pin IC DRAM , cycles every 64ms MICRON TECHNOLOGY INC SSE D b 111S * * QDDSGh4 237 «IIRN 41 MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD MICRON I ■TI CHNOLCir.v INC FUNCTIONAL BLOCK DIAGRAM


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PDF MT12D88C25636 88-Pin dram 88 pin
Not Available

Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC SSE ] > blllSMl 0Q0H23H 474 · MRN PRELIM INARY MICRON Ut.K N O , data sheets or refer to Micron 's M ilitary Data Book. · Operating Tem perature, TA Com m ercial (0 , refresh cycle w ill invoke the internal refresh counter for automatic RAS addressing. 1-73 Micron Technology. Inc. reserves the right to chanffe products or specifications without notica@1992, Micron Technology, Inc. MICRON TECHNOLOGY INC 5SE D 0004H35 3DQ « H K N PRELIM INARY M IC R O N


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PDF 0Q0H23H C16M1A1 096-cycle 24-Pin blll54 Q0D4244 A0-A10; A0-A11
UG-043

Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC SSE D GGG43Gb 4^0 urn MICRON TECHNOCOGV. INC. MT4C4001J L , military) or military ceramic packages. Please consult factory for die data sheets or refer to Micron , addressing. 1-145 MICRON TECHNOLOGY INC 5SE D blllSMT 0004307 3B7 M W R N MT4C4001J L 1 MEG x4 DRAM MICRON I N E W DRAM TECHNOLOGY. IN C. FUNCTIONAL B LO C K DIAGRAM FAST PAGE MODE , Data Out Data In High-Z High-Z Ü Ä5-BEFO RE-RAS REFRESH BATTERY BACKUP REFRESH Micron Technology


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PDF GGG43Gb MT4C4001J 024-cyde 128ms 225mW 20-Pin UG-043
Not Available

Abstract: No abstract text available
Text: 1,2 , 4 MEG X 32 DRAM SODIMMs MICRON I TECHNOLOGY INC SMALL-OUTLINE DRAM MODULE , Micron Technology, Inc., reserves the right to change products or specifications without notice. 2)1997, Micron Technology, Inc. 1, 2, 4 MEG x 32 DRAM SODIMMs I^IICZRO N PART NUMBERS EDO PAGE MODE , . blllSMT G G n b S G 1 ,2 ,4 Meg x 32 DRAM SODIMMs DM34.pm5 - Rev. 3/97 7-2 7T5 Micron Technology. Inc. reserves (he right to change products or specifications without notice. ©1997, Micron


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PDF MT2LDT132H MT4LDT232H MT8LDT432H 72-pin, 024-cycle 048-cycle 128ms
Not Available

Abstract: No abstract text available
Text: MICRON I MT4C4M4E9(S) 4 MEG X 4 DRAM TECHNOLOGY, MC. DRAM 4 MEG x 4 DRAM 4K REFRESH , . MT4C4M4E9(S) D33.pm5 - Rev. 8/96 Micron Technology, Inc., reserves the right to change products or specification« without notice. ©1996. Micron Technology. Inc. ■blllSMI 0 0 1 5 7 ^ 0=13 ■MT4C4M4E9(S) 4 MEG x 4 DRAM MICRON I TECHNOLOGY, INC. EDO PAGE MODE The MT4C4M4E9(S) provides , 1 OUTPUT ENABLE AND DISABLE MT4C4M4E9(S) D33.pmS - Rev. 8/96 Micron Technology, Inc


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PDF 220mW 096-cycle 128ms
2012 - Not Available

Abstract: No abstract text available
Text: less. 4. Drive case temperature. Warranty: Contact your Micron sales representative for further information regarding the product, including product warranties. 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice , Micron Technology Blank = Production ES = Engineering sample Product Family FD = Flash drive


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PDF P410m MTFDEAK100MAS-1S1AA, MTFDEAK200MAS-1S1AA, MTFDEAK400MAS-1S1AA 100GB, 200GB, 400GB 100GB: 200GB:
Not Available

Abstract: No abstract text available
Text: MICRON I MT4LC4M4A1 (S) 4 MEG X 4 DRAM TECHNOLOGY. INC. DRAM 4 MEG x 4 DRAM 4K , invoke the internal refresh counter for automatic RAS# addressing. Micron Technology, Inc., reserves the right to change products or specifications without notice. Micron Technology. Inc. WS blllSMT GG1SÔS3 b07 MT4LC4M4A1 (S) 4 MEG x 4 DRAM MICRON ■TECHNOLOGY, MC. REFRESH (continued) An , . 8/96 O ¿1 ■I blllSHT Micron Technology, Inc., reserves the right to change products


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PDF 120mW 096-cycle 24/26-Pin DA-98
2003 - TN-47-07

Abstract: Micron TN-47-01 DDR2-533 TN-47-01
Text: Introduction Micron provides extensive design support tools for system designers. For example, Micron , design in their particular environments. It is available on Micron 's Web site at http://www.micron.com/ products/dram/ddr2sdram/technote.html. Designers can also use Micron 's proprietary DDR2 2 , TN4707.fm - Rev. A 7/05 EN 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. Products and specifications


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PDF TN-47-07: DDR2-533 TN-47-01) 09005aef812507c7 TN4707 TN-47-07 Micron TN-47-01 TN-47-01
AMI350XXPR

Abstract: ODCHXX16 MAP 3959 crystal oscillator 4049
Text: 0.35 Micron CMOS Pad Library Datasheets AMI350XXPR 3.3/5.0 Volt Section 4 PAD LIBRARY Revision 1.1 PAD LIBRARY SELECTIO DATASHEETS Pad Logic AMI350XXPR 0.35 micron CMOS Pad Library 4-3 AMI350XXPR 0.35 micron CMOS Pad Library Pad Logic PAD SELECTION GUIDE 4-2 AMI350XXPR 0.35 micron CMOS Pad Library PAD SELECTION GUIDE Input Drive Pieces Name Description , AMI350XXPR 0.35 micron CMOS Pad Library PWRPAD GNDPAD Generic power pad


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PDF AMI350XXPR ODCHXX16 MAP 3959 crystal oscillator 4049
2000 - MICRON 63

Abstract: No abstract text available
Text: , 8MB, 10MB, 16MB · 3.3V or 5V supply voltage COMPACTFLASH CARD GENERAL DESCRIPTION The Micron , specification. Micron 's MediaFlash memory components are used on the card, which is specifically designed for high-performance, low-cost, mass-storage applications. 4MB-16MB COMPACTFLASH FC02.p65 ­ Rev. 1/00 Micron , PCMCIA slot. Micron 's CompactFlash card provides a superior memory solution for any application requiring rugged, compact, low-power (battery-powered) and reliable mass storage. Please refer to Micron 's Web site


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PDF 4MB-16MB MTCF004A, MTCF008A, MTCF010A, MTCF016A 16-bit MICRON 63
S9618

Abstract: No abstract text available
Text: I MICRON TECHNOLOGY, INC. MT4C4M4B1 (S) 4 MEG X 4 DRAM DRAM FEATURES * JEDEC- and , products or specifications without notice £>1996, Micron Technology, Inc I MICRON TECHNOLOGY, INC , a LOW (LATE WRITE). r\ £ - Micron Technology, In c , reserves the right to change products or specifications without notice fc l 996, Micron Technology, Inc I MICRON TECHNOLOGY, INC. MT4C4M4B1 (S , S/96 3 Micron Technology, Inc , reserves the right to change products or specifications


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PDF 230mW 048-cycle 24/26-Pin S9618
Not Available

Abstract: No abstract text available
Text: MT4LC4M4B1 (S) 4 MEG X 4 DRAM MICRON ■TECHNOLOGY, MC. DRAM 4 MEG x 4 DRAM 2K , invoke the internal refresh counter for automatic RAS# addressing. Micron Technology. Inc. reserves the rig h tlo change products or specifications without notice. ©1996, Micron Technology. Inc.  , llism 001SÖ74 Micron Technology, Inc., reserves the right to change products or specifications wlthoul notice. ©1996, Micron Technology, Inc. 331 MT4LC4M4B1 (S) 4 MEG x 4 DRAM MICRON I


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PDF 140mW 048-cycle WT4LC4M481
2012 - MX25L25635F

Abstract: N25Q256A13E1241E mx25l25635 MX25L25635FMI N25Q256A13ESF40G N25Q256A83ESF40F MX25L25635FMI-10G tvr 10g N25Q256A13E1241F serial flash 256Mb fast erase spi
Text: TN-12-20: Migrating to Micron 's N25Q 256Mb Flash Device Introduction Technical Note Migrating from Macronix's MX25L25635F to Micron 's N25Q 256Mb Flash Device Introduction The purpose of this technical note is to compare features of the Micron ® N25Q (256Mb) and Macronix MX25L25635F Flash memory , reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron 's production data sheet specifications. All information discussed herein is


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PDF TN-12-20: 256Mb MX25L25635F 256Mb) 09005aef84c56c57 tn1220 N25Q256A13E1241E mx25l25635 MX25L25635FMI N25Q256A13ESF40G N25Q256A83ESF40F MX25L25635FMI-10G tvr 10g N25Q256A13E1241F serial flash 256Mb fast erase spi
B1115

Abstract: mt4c4001 MT4C4001JDJ-6 4c4001 MT4C4001J JCSR
Text:  MICRON SEMICONDUCTOR INC b3E » MICRON blllSMT 0007b2cì 405 ■FIRN MT4C4001 J(L) 1 MEG x 4 , 1-87 Micron Semiconductor. Inc., reserves the right to change products or specifications without notice. £>1993, Micron Semiconductor. Inc. MICRON SEMICONDUCTOR INC L3E D ■blllS^ 000?b3D 154 ■MRN MICRON i semiconductor. inc. MT4C4001 J(L) 1 MEG x 4 DRAM RAS HIGH time. Memory cell data is , (LATE-WRITE) 1-88 Micron Semiconductor, inc., reserves th MICRON SEMICONDUCTOR INC b3E » ■blllSMT â


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PDF 0007b2cà MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J 275mW B1115 MT4C4001JDJ-6 4c4001 JCSR
TT-612

Abstract: No abstract text available
Text: I MICRON TECtWoLOBV. INC. 1 MEG x 16 EDO DRAM M T4LC 1M 16E5 For the latest data sheet revisions, p/ease refer to the Micron Web site: www.micron.com/m ti/msp/htmi/da tasheet. h tmi DRAM , 996, Micron Technology, I ne. I MICRON TECttiOLOBV. INC. 1 MEG x 16 EDO DRAM PAGE ACCESS , Micron T o il nology, Inc., raservastha right to ciiangaproduas or specllcatlons w lh out not lea. i.1996, Micron Technology, I nc. I MICRON TECttiOLOBV. INC. 1 MEG x 16 EDO DRAM EDO PAGE MODE


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PDF 024-cycle 44/50-Pin 42-PIN TT-612
Not Available

Abstract: No abstract text available
Text: MT4C4M4B1(S) 4 MEG X 4 DRAM MICRON I TECHNOLOGY, INC. DRAM 4 MEG x 4 DRAM 2K , option allows the user the Micron Technology, Inc., reserves the right to change products or specifications without notice. ©1996, Micron Technology. Inc. M T 4C 4M 4B 1(S ) D 3 9 .p m 5 - R ev. 8 /9 6 t , lllS 4 c 0015033 i n l MT4C4M4B1(S) 4 MEG x 4 DRAM MICRON I TECHNOLOGY, INC , output is a LOW (LATE WRITE). r\ M T4C 4M 4Bl(S) D39.pmS —Rev. 8/96 ^ ■Micron


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PDF 230mW 048-cycle 24/26-Pin
Not Available

Abstract: No abstract text available
Text: MICRON M TECHNOLOGY INC SSE D b lllS M R 0QQ433Q MT4C4004J 1 MEG X 4 DRAM IC , Micron 's Military Data Book. • Part Number Example: MT4C4004JDJ-7 GENERAL DESCRIPTION The , for automatic RAS addressing. 1-169 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©1992, Micron Technology. Inc. MICRON TECHNOLOGY INC SSE , H-*L 1-170 High-Z Micron Technology, Inc., reserves the right to chango products or


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PDF 0QQ433Q MT4C4004J 36bit 225mW 024-cycle 00Q4343 T4C4001JDJ T4C4004JDJ
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