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LT1213ACJ8 Linear Technology IC DUAL OP-AMP, 400 uV OFFSET-MAX, 28 MHz BAND WIDTH, CDIP8, Operational Amplifier
LT1213ACS8 Linear Technology IC DUAL OP-AMP, 400 uV OFFSET-MAX, 28 MHz BAND WIDTH, PDSO8, Operational Amplifier
LT1211ACS8 Linear Technology IC DUAL OP-AMP, 400 uV OFFSET-MAX, 14 MHz BAND WIDTH, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier
LT1211ACJ8 Linear Technology IC DUAL OP-AMP, 400 uV OFFSET-MAX, 14 MHz BAND WIDTH, CDIP8, HERMETIC SEALED, CERDIP-8, Operational Amplifier
LT1013IN8#TRPBF Linear Technology IC DUAL OP-AMP, 400 uV OFFSET-MAX, PDIP8, 0.300 INCH, LEAD FREE, PLASTIC, DIP-8, Operational Amplifier
LTC6240HVIS5#TRM Linear Technology IC OP-AMP, 400 uV OFFSET-MAX, 18 MHz BAND WIDTH, PDSO5, PLASTIC, MO-193, TSOT-23, 5 PIN, Operational Amplifier

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diode SG22

Abstract:
Text: ) 200 ( P ) 200 ( P ) 200 ( P ) 400 (A) ' 400 (A) 400 (A) 400 (A) 400 (A) 200 ( P ) 200 ( P ) 200 ( P ) 200 ( P ) •• 200 ( P ) 200 ( P ) 400 (A) 400 (A) 400 (A) 400 (A)- 400 (A) 400 (A) 400 (A) 400 (A) 400 (A) 400 (A) 400 (A) 400 (A) 400 (A) 4 <1 Notiti • Available In mil. verilon (A) Silicon alloy construction ( P , .25 150 ( P ) 10 (1) 5 — .25 150 ( P ) — 4 — — ' 250 (A) — 35 — , — 400 (A) 70 — 400 , .— — — 1N3653 100 1 400 .025 25 75 4 .004 250 ( P ) IN 3731 _ 1 100 .05 •50 50 2 .003 250 ( P


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PDF DDDD33fl 1N462A 1N463A 1N464 1N482 1N482A 1N482B 1N483 1N483A 1N483B* diode SG22 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N5318
P8002

Abstract:
Text: 100 G P 15A G P 15B G P15D G P 15G G P 15J G P15K 50 100 200 400 600 800 G P10A G P10B G P10D G P10G G , 30G G P 30J G P30K G P30M P 600A P 600B P 600D P600G P 600J P 600K 50 100 200 400 6 00 800 , G P 10B R G P 10D RG P10G RG P 10J RG P 10K 50 100 150 150 200 400 600 800 1.0A 150 , G P 20K 50 100 150 150 200 400 600 800 2 .0 A 150 150 250 500 D015 N O TE , A G E T E M P - 5 5 ° C TO + 150°C 50 100 150 200 300 400 500 600 600 800 1000 50 100 150 200


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PDF 4001S 4002S 4003S 4004S RL101 RL104 RL105 RL106 IN4001 P8002 4006R IN4001 a 4007 IN4001S F80-015 B 503 f30 P8000 F5003 F160-03 30 uf300
2002 - TSP160C

Abstract:
Text: 400 1.5 60 50 1.1 1.5 5.0 400 DO-15 P S 156 600 1.5 60 50 , 200 DO-15 P S 204 400 2.0 60 70 1.1 2.0 5.0 400 DO-15 P S 206 , (Plastic Passivation Junction) P 600A 50 6.0 55 400 1.0 6.0 10.0 50 P 600B 100 6.0 55 400 1.0 6.0 10.0 100 P -600 P 600D 200 6.0 55 400 1.0 6.0 10.0 200 P -600 P 600G 400 6.0 55 400 1.0 6.0 10.0 400


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PDF 50Amp 80Amp 100Amp 375x360x390/390x240x420 375x360x390 O-252 TSP160C ER1602CT PANJIT ER306 727 thyristor uf1002ct 1N4004 SOD-123 mw 137 600g D804C pg2010 272 zk thyristor
1n4007 cdil

Abstract:
Text: -15( P ) DO-15( P ) DO-15( P ) 50 100 200 300 400 500 600 800 1000 1.5 1.5 1.5 1.5 1.5 , HER204 DO-15 ( P ) 300 2.0 HER205 DO-15 ( P ) 400 2.0 HER206 DO-15 ( P ) 600 2.0 HER207 DO-15 ( P , -41( P ) DO-41( P ) (V) 400 600 1000 (A) 1.0 1.0 1.0 at TA (oC) 75 75 75 (A) 30 30 , -15( P ) DO-15( P ) DO-15( P ) 50 100 200 400 600 800 1000 1.5 1.5 1.5 1.5 1.5 1.5 1.5 , -15( P ) DO-15( P ) 50 100 200 400 600 800 1000 2.0 2.0 2.0 2.0 2.0 2.0 2.0 75 75 75


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PDF C-120 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 DO-41 1n4007 cdil 1N4004 DO-214AC 1N4007 melf M7 DO-214AC 1n4007 cdil data sheet diode SM4004 1N4007 M7 1N4004 M4 1N4007/DO-41 diode gs1j
2011 - SMBJ11CA

Abstract:
Text: Transient Voltage Suppressors P4KE6.8A DO-41 400 5.8 6.45 7.14 10 10.5 39 Reverse leakage (IR) (μA) 1000 P4KE6.8CA DO-41 400 5.8 6.45 7.14 10 10.5 39 1000 P4KE7.5A DO-41 400 6.4 7.13 7.88 10 11.3 36.3 500 P4KE7.5CA DO-41 400 6.4 7.13 7.88 10 11.3 36.3 500 Part Number Package , . Clamping Peak Pulse Voltage Current (VC) (IPP) (V) (A) P4KE8.2A DO-41 400 7.02 7.79


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PDF DO-41 30KPA280CA P-600 30KPA288A 30KPA288CA SMBJ11CA SMBJ130CA SMBJ13CA SMBJ14CA SMBJ160CA SMBJ16CA SMBJ8.5CA
BC682

Abstract:
Text: BC441 BC485 N TO-92F 625 1 45 60 400 # 100 2 0.5 0.5 200+ 7+ BC486 BC486 P TO-92F 625 1 45 60 400 # 100 2 0.5 0.5 150+ 9+ BC485 BC487 N TO-92F 625 1 60 60 400 # 100 2 0.5 0.5 200+ 7+ BC488 BC488 P TO , + BC490 BC490 P TO-92F 625 1 80 60 400 # 100 2 0.5 0.5 150+ 9+ BC489 BC512 P TO-92F 300 0.2 45 60 300# 2 5 0.6 0.1 200 5+ BC513 P TO-92F 300 0.2 45 80 400 # 2 5 0.6 0.1 200 5+ - BC514 P TO-92F 300 0.2 20 140 400 # 2 5 0.6 0.1 200 5+ — BC526 P TO-92A 625 0.2 50 60 800 # 2 5 0.6 0.1 100 5 — BC527


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PDF BC431 O-92F BC432 BC432 BC431 BC440 BC460 BG441 BC461 BC682 BC535 BC512 BC526 BC513 BC446 BC485
diode 1n4007 melf smd

Abstract:
Text: 200 400 600 800 1000 1.10 1.10 1.10 1.10 1.10 1.10 1.10 BA157 BA158 BA159 1 1 1 75 75 75 400 600 1000 1.30 1.30 1.30 UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 1 1 1 1 1 1 1 50 50 50 50 50 50 50 50 100 200 400 600 800 1000 1.00 , 3 3 3 3 3 3 3 50 50 50 50 50 50 50 50 100 200 400 600 800 1000 1.00 1.00 , 30 30 5 5 5 5 5 5 5 1 1 1 1 1 1 1 DO-41( P ) DO-41( P ) DO-41( P ) DO-41( P ) DO


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PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 BA157 BA158 BA159 diode 1n4007 melf smd 1N4007 melf m4 smd 1N4004 M7 DO-214AC do-214ac M1 m4 smd 1N5401 1N4007 DO-214AC 1N4004 DO-214AA equivalent components of diode her207 1N4007
BC460

Abstract:
Text: BC432 BC440 BC441 BC445 N P N N N TO-92F TO-92F TO-39 TO-39 T 0 -9 2 F 625 625 , BC461 BC485 BC486 P P P N P TO-92F TO-39 TO-39 TO-92F TO-92F 625 1000 1000 625 625 0.3 1 1 1 1 60 40 60 45 45 50 40 40 60 60 460# 250# 250# 400 # 400 , BC512 N P N P P TO-92F TO-92F TO-92F TO-92F TO-92F 625 625 625 625 300 1 1 1 1 0.2 60 60 80 80 45 60 60 60 60 60 400 # 400 # 400 # 400 # 300# 100 100 100


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PDF T-27-01 BC431 BC432 BC440 BC441 BC445 O-92F BC460 BCW92 A, B
BC512

Abstract:
Text: BCW75 BCW76 BCW77 BCW78 BCW79 BCW80 BCW90 BCW91 BCW92 BCW93 BCW94 BCW95 BCW96 POLA RITY N P N N N P P P N P N P N P P P P P P P P N N N P P N P N P N P P P N N N P N P N N P P N N P P N N P P N N P , 100 240 240 250 250 460 460 250 250 400 400 400 400 400 400 300 400 400 800 400 400 . - Ic (mA) # , BC738 BC727 BC728 BCW35 BCW34 BCW37 BCW36 400 # 400 # 300 300 250 250 160 160 160 160 630 it 630 # 630 # 630 # 350 350 350 350 630 630 400 400 630 630 400 400 400 300 300 300 400 300 300 # # # # # # #


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PDF BC431 BC432 BC440 BC441 BC445 BC446 BC460 BC461 BC485 BC486 BC512
LR kbpc3510

Abstract:
Text: K B P C 15 02 K B PC 3501 KBPC1S01 0l « o o G a co * ! § K S 800 560 400 u , le - p h a se , fu ll-w a v e b rid ge re ctifiers in 4 - p in D u a l-in -L in e pa ckages. 50 V to 10 0 0 V (VRRM). 1A (l0 ), 3 0 A p e a k o n e -h a lf c y c le surge. E poxy p a c k a g e has U L 9 , , s m a ll-size , sin g le - p h a se , full w a ve b rid ge rectifiers. 50 V to 10 00V (V RRM). 1,5A , BP005-KBP10 Series; 1.5A · 2KBP005-2K B P10 Series; 2A. R eliable, low -cost, sin g le - p h a se , fu ll-w a v


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PDF 005-D RDF005-RDF10 C15/25/35 RKBPC3501 C3S10 KBPC3500 LR kbpc3510 KBU80B kbu808 Rectifier s01cc kbp 3510 BPC802 KBU diode bridge pc 2501 kbp02 C3502-AKBPC3508
1N4007 DO-214AC

Abstract:
Text: -15( P ) DO-15( P ) 1 1 1 1 1 1 1 75 75 75 75 75 75 75 50 100 200 400 600 800 , 200 400 600 800 1000 1.1 1.1 1.1 1.1 1.1 1.1 1.1 BA157 BA158 BA159 1 1 1 75 75 75 400 600 1000 1.3 1.3 1.3 UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 1 1 1 1 1 1 1 50 50 50 50 50 50 50 50 100 200 400 600 800 1000 FR151 , 5 5 5 1 1 1 1 1 1 1 DO-41( P ) DO-41( P ) DO-41( P ) DO-41( P ) DO-41( P ) DO-41( P ) DO


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PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 BA157 BA158 BA159 1N4007 DO-214AC 1N4004 DO-214AC 1N4007 SMD DO-214AC SMA diode 1n4007 melf smd m4 smd 1N4004 m4 smd 1N5401 M7 DO-214AC 1N4007 M7 1N4004 DO-214AA 1n4001 melf
BPC5010

Abstract:
Text: BPC4001 % G B P C 4 002 % G B P C 4004 P C 4006 W G B P C 4008 W G B P C 4010 50 100 200 400 600 , C 5002 W G B P C 5004 * 1 G B P C 5006 %G BPC5008 91G BPC5010 50 100 200 400 600 800 1000 M ETAL , N D S T O R A G E T E M P ER A T U R E RANGE: - 50°C to - 150°C Maxim um Average Rectified Current @ , M P E R E S/G B P C (C A SE 26) % GBPC15005 GBPC15015 » GBPC1502 GBPC1504 « GBPC1506 « GBPC1508 % GBPC1510 50 100 20 0 400 60 0 80 0 100 0 m e t a l s u b s t r a t e w it h USE W EPO XY SH E LL


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PDF GBPC15005 GBPC15015 GBPC1502 GBPC1504 GBPC1506 GBPC1508 GBPC1510 BPC5001 BPC5008 BPC5010 BPC2508 BPC2506 BPC3510 c4008 PC2506 PC4006
M2D068-BF

Abstract:
Text: -AP02 S4E 400 -AP02 S6E 400 -AP10 S6E 400 -AP10 p k 117 117 117 117 104 104 -03 -04 -03 , pressure level 50 60 50 60 50 60 50 60 µF/VDB dB(A) Pa °C kg -1,5/ 400 1,5/ 400 - 140 140 150 150 70 90 50 50 45 70 70 70 80 90 75 80 Capacitor , Current draw M2E 068-BF Power input *2E 200 m3/h 230/ 400 230/ 400 230 230 230/ 400 230/ 400 230 230 1 Speed/rpm M2D068-BF Hz Motor *2D 200(1) Air flow Type


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PDF M4S068-BF M4D068-BF 068-BF A4D450-BA14 S4D450-HA14 W4D450-GA14 S4D450-GA14 M2D068-BF M2D074-DF M4D094-HA A4D450-AP01 A4D420-AP02 068-DF S4D420-AP02 W4D350-CR06 M4D068-DF W4D420-CP02
2002 - DC250V

Abstract:
Text: 100 P2S 250 H2D 50 100 250 MMB 400 630 125 MMBA 250 125 MMWA-EF 250 250 MPS 400 630 800VP- P 1000VP- P , 250 250 MPS 400 630 800VP- P 1000VP- P MPR 1200VP- P 1600VP- P 800VP- P 1000VP- P 1200VP- P 1600VP- P 11 Jan , FILM CAPACITORS LEAD CUT AND FORMING LEAD CUT F 5.0max F 5.0max P Style L F L P F(mm) L(mm) P (mm) 5.0 7.5 10.0 15.0 22.5 4.0 5.0 4.0 B3 E3 A3 A7 H3 Y3 13 P -1.5~ P +2.5 5.0 B7 E7 H7 Y7 17 4.0 S3 W3 Q3 K3 P +2.5~ P +10.0 5.0 S7 W7 Q7 K7 · There are many forming styles


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PDF DC250V DC400V DC630V DC450V M100/250V
Not Available

Abstract:
Text: 1.3 150 P S204R 400 2.0 50 70 5.0 2.0 1.3 150 P S206R 600 2.0 , 400 3.0 50 200 5.0 3.0 1.3 150 P S306R 600 3.0 50 200 5.0 , 1.3 150 P S602R 200 6.0 75 400 10.0 6.0 1.3 150 P S604R 400 6.0 75 400 10.0 6.0 1.3 150 P S606R 600 6.0 75 400 10.0 6.0 1.3 250 P S608R 800 6.0 75 400 10.0 6.0 1.3 500 PS6010R 1000 6.0 75


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PDF DO-15 S200R PS201R S202R S204R S306R S308R PS3010R P-600 S600R
2013 - Not Available

Abstract:
Text: - 400 - 400 100 150 -200 -150 -100 -50 0 50 TIME (ps) INEQ0 = 1, INEQ1 = 0, VIN = 500mVP- P , toc30 400 400 0 0 TIME (ps) INEQ0 = 1, INEQ1 = 0, VIN = 500mVP- P , OEQ0 = OEQ1 = OEQ2 = , Integration for Performance  Random Jitter: 0.5psRMS, Deterministic Jitter: 7psp- p ï , mA 80 100 120 I DC 80 100 120 I -150mV P VIN_CM P +200mV 50 20 , VHIGH_P-P VHIGH_P- P VLOW_P-P Figure 1. Illustration of Output Deemphasis Maxim Integrated  â


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PDF MAX14950A MAX14950A
R143.320.000

Abstract:
Text: p = 5 10 f [kHz] 10 100 400 Vdc / 160 Vac - Reduced Sizes 1 0.1 Vrms [V , 5 0.15 µF p = 5 100 0.1 1 Irms [A] 400 Vdc / 160 Vac - Reduced Sizes 10 f [kHz] 10 100 10 100 400 Vdc / 200 Vac 10 1 1 0.0068 µF p = 5 0.015 µF p = , €“ 400 VDC (Automotive Grade) Overview Applications The R82 Series is constructed of metallized , qualification requirements. Benefits • Voltage range: 50 – 400 VDC • Capacitance range: 0.001 µF


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PDF
2012 - Not Available

Abstract:
Text: /Output Return Loss S Very Low Latency: 160ps (typ) Propagation Delay S Random Jitter P 0.5psRMS (typ) S Deterministic Jitter P 10.5psP- P (typ) S Four-Level-Programmable Input Equalization S , log VHIGH_P- P VLOW_P-P Figure 1. Illustration of Output Deemphasis Typical Operating Characteristics (TA = +25°C, unless otherwise noted.) INEQ0 = INEQ1 = 0, VIN = 200mVP- P , 0EQ2 = 0, OEQ1 = 0, OEQ0 = 0, DATA RATE = 5GT/s INEQ0 = INEQ1 = 0, VIN = 200mVP- P , 0EQ2 = 0, OEQ1 = 0, OEQ0 = 1, DATA


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PDF MAX14950 MAX14950
2sd 5023

Abstract:
Text: 60 40 250# 150 2 1 1 50 25 BC313A BC 215 P TO-18 400 0.5 30 40 300# 150 10 0.9+ 0.5 150 8 — BC , 1 50 25 bc 441 bc 485 N to-92f 625 1 45 60 400 # 100 2 0.5 0.5 200+ 7+ bc 486 bc 486 p to-92f 625 1 , 488 bc 488 p to-92f 625 1 60 60 400 # 100 2 0.5 0.5 150+ 9+ bc487 bc 489 N to-92f 625 1 80 60 400 # 100 2 0.5 0.5 200+ 7+ bc 490 bc 490 p to-92f 625 1 80 60 400 # 100 2 0.5 0.5 150+ 9+ bc 489 bc 512 p to-92f 300 0.2 45 60 300# 2 5 0.6 0.1 200 5+ - bc 513 p to-92f 300 0.2 25 80 400 # 2 5 0.6 0.1 200 5


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PDF -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC231
1rf730

Abstract:
Text: -10 -10 -19 -10 5.0 -10 1300 700 400 -25 TO-3 1R F 9141 IR P -60 ±20 -19 125 ±100 ±20 -250 -60 -2.0 -4.0 -0. 25 0 2 -10 -10 -19 -10 5.0 -10 1300 700 400 -25 TO-3 IRF9142 IR P -100 + 20 -15 125 + 100 + 20 -250 -100 -2.0 -4.0 -0.25 0.3 -10 -10 -15 -10 5.0 -10 1300 700 400 -25 TO-3 IRF9143 IR P -60 , SAMSUNG P -100 ±20 -19 125 ±100 ±20 -250 -100 -2 -4 -t . 25 0. 2 -10 -10 -19 -10 5 -10 1300 700 400 -25 , -10 1300 700 400 -25 TO-3 ÍRF9142 SAMSUNG P -100 ±20 -15 125 ±100 ±20 -250 -100 -2 -4 -t . 25 0


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PDF 1RF842 O-220AB IRF843 T0-220AB IRF9130 IRF833 IRF840 -220AB 1rf730 IRF9120 1rf9530 1RF640 IRF9512 1RF840 1rf830 IRF9523
2010 - D10.2 pattern

Abstract:
Text: , DATA RATE = 5GT/s 600 400 200 0 -200 - 400 -600 MAX14950 toc02 INEQ0 = INEQ1 = 0, VIN = 200mVP- P , INEQ1 = 0, VIN = 200mVP- P , 0EQ0 = 0, OEQ1 = 0, OEQ2 = 1, DATA RATE = 5GT/s 600 400 200 0 -200 - 400 , 200mVP- P , 0EQ0 = 1, OEQ1 = 1, OEQ2 = 1, DATA RATE = 8GT/s 800 600 MAX14950 toc28 600 400 VOLTAGE , Electrical Idle Detection S Very Low Latency: 160ps (typ) Propagation Delay S Random Jitter P 1.5psRMS (max) S Deterministic Jitter P 10.5psP- P (typ) S Four-Level-Programmable Input Equalization S


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PDF MAX14950 T423590 MAX14950 D10.2 pattern
T1S97

Abstract:
Text: ZT87 ZT187 2N703 2N760 2N841 2N929 POLA RITY P N N N N N N N N N P N N N P P P N N N N N N N N N N N N P N P P N P N N N P P P N P N P N P N N N P N N -N N CASE MAXIMUM RATINGS V e to Pi Ic (mW , 100 100 100 100 50 50 50 100 200 100 100 50 50 100 100 100 50 200 30 100 100 50 400 400 400 400 400 400 200 200 500 500 50 50 100 1000 25 45 45 20 35 35 45 45 40 60 60 12 18 25 12 18 25 12 18 30 12 18 , 76 60 600 160 400 1000 500 300 # 500 300 # 700 300 300 400 400 400 400 400 400 300 300 300 600 600


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PDF MPS6523 MPS6565 MPS6566 MPS6571 MPS6573 MPS6574 MPS6575 MPS6576 MPS8097 MPS8098 T1S97 TIS90 TIS92 V/mpsa09
2sd 5023

Abstract:
Text: -39 800 1 60 40 250# 150 2 1 1 50 25 bc313a bc 215 p to-18 400 0.5 30 40 300# 150 10 0.9+ 0.5 150 8 â , bc 486 p to-92f 625 1 45 60 400 # 100 2 0.5 0.5 150+ 9+ bc 485 bc 487 N to-92f 625 1 60 60 400 # 100 2 0.5 0.5 200+ 7+ bc 488 bc 488 p to-92f 625 1 60 60 400 # 100 2 0.5 0.5 150+ 9+ bc 487 bc 489 n to-92f 625 1 80 60 400 # 100 2 0.5 0.5 200+ 7+ bc 490 bc 490 p to-92f 625 1 80 60 400 # 100 2 0.5 0.5 150+ 9+ bc 489 bc 512 p to-92f 300 0.2 45 60 300# 2 5 0.6 0.1 200 5+ - bc 513 p to-92f 300 0.2 25 80 400 # 2


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PDF 13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2218A 2SC 9012 BC287 mps 1132 cs9012 9416A BC526
BC387

Abstract:
Text: N TO-92F 625 1 45 60 400 tt 100 2 0.5 0.5 200+ 7+ BC486 BC486 P TO-92F 625 1 45 60 400 tt 100 2 0.5 0.5 150+ 9+ BC485 BC487 N TO-92F 625 1 60 60 400 tt 100 2 0.5 0.5 200+ 7+ BC488 BC488 P TO-92F 625 1 , + BC490 BC490 P TO-92F 625 1 80 60 400 tt 100 2 0.5 0.5 150+ 9+ BC489 BC512 P TO-92F 300 0.2 45 60 300 it 2 5 0.6 0.1 200 5+ - BC513 P TO-92F 300 0.2 45 80 400 # 2 5 0.6 0.1 200 5+ BC514 P TO-92F 300 0.2 20 140 400 tt 2 5 0.6 0.1 200 5+ - BC526 P TO-92A 625 0.2 50 60 800 tt 2 5 0.6 0.1 100 5 - BC527


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PDF BC381 O-92F BC387 BC388 BC388 BC387 BC425 BC512 BC514 BC460 BC682 BC526 BC432 BC431
2012 - Not Available

Abstract:
Text: /Output Return Loss S Very Low Latency: 160ps (typ) Propagation Delay S Random Jitter P 0.5psRMS (typ) S Deterministic Jitter P 10.5psP- P (typ) S Four-Level-Programmable Input Equalization S , log VHIGH_P- P VLOW_P-P Figure 1. Illustration of Output Deemphasis Typical Operating Characteristics (TA = +25°C, unless otherwise noted.) INEQ0 = INEQ1 = 0, VIN = 200mVP- P , 0EQ2 = 0, OEQ1 = 0, OEQ0 = 0, DATA RATE = 5GT/s INEQ0 = INEQ1 = 0, VIN = 200mVP- P , 0EQ2 = 0, OEQ1 = 0, OEQ0 = 1, DATA


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PDF MAX14950 MAX14950
Supplyframe Tracking Pixel