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1A215033GF EECO Switch Master Electronics 135 $9.92 $7.16
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MJE15033G ON Semiconductor RS Components 1,269 £1.11 £1.11
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MJE15033G ON Semiconductor Rochester Electronics 14,151 $0.92 $0.75
MJE15033G ON Semiconductor Avnet - $1.65 $0.64
MJE15033G ON Semiconductor Newark element14 1,737 $1.69 $0.73
MJE15033G ON SEMICONDUCTOR New Advantage Corporation 5,267 $3.02 $2.75
MJE15033G ON Semiconductor Avnet 1,050 €1.03 €0.79
MJE15033G ON Semiconductor RS Components 460 £1.23 £1.11
MJE15033G ON Semiconductor TME Electronic Components 61 $1.40 $0.83
MJE15033G ON Semiconductor ComS.I.T. 650 - -
MJE15033G ON Semiconductor Chip1Stop 8 $2.17 $2.17
MJE15033G ON Semiconductor Avnet 7,625 $1.53 $0.64
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MJE15033G ON Semiconductor Avnet - $1.61 $0.70
MJE15033G ON Semiconductor element14 Asia-Pacific 2,785 $2.61 $2.61
MJE15033G ON Semiconductor Wuhan P&S 31 $1.23 $0.71
MJE15033G. ON Semiconductor element14 Asia-Pacific 805 $2.30 $0.89
SA57250-33GW Philips Semiconductors America II Electronics 27,000 - -
VP3145-033GA SMC Corporation of America Allied Electronics & Automation - $211.43 $211.43
VP3145-033GA-N SMC Corporation of America Allied Electronics & Automation - $211.43 $211.43
VP3145-033GA1 SMC Corporation of America Allied Electronics & Automation - $189.26 $189.26
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50 33g Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
50 33g

Abstract: TRIO TA 80W stk*0460 600 DKZ 15Wx2 5247 STK401-20 STK400-490 K30V MG-200
Text: < o o -H < 50 33g f -O o H -|í ti Oí -©H-O L M S -ÌP < r " Il » Ko f Il 11 w # to I J? = O , P0(2) Vqc = ±32V, f = 20Hz to 20kHz, THD = 0.4% 50 55 - w L,H P0(3) Vcc = d21 V, f = 1kHz-THD = 1 -0%. \ = 3ii 25 30 - w C P0(4) Vcc = ±26V, f = 1kHz, THD = 1.0%, RL = 3Q 50 55 - w Total harmonic , lcco(1) VCC = ±30V 20 60 100 mA C lcco(2) Vcc = ±39V 10 30 50 mA Neutral voltage L, R VN(1) Vcc = , -130 STK401-330 100W x 2 ±£ 5.0 - ±45.0 - STK401-140 STK401-340 120Wx2 ±74.0 - ±51.0 - STK400


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PDF STK400-490 STK400-490 STK400-X00 STK401-X00 50 33g TRIO TA 80W stk*0460 600 DKZ 15Wx2 5247 STK401-20 K30V MG-200
2001 - CR0402-16W-000T

Abstract: 74LVTH241 Header 13X2 RA2EJ2-6G RTVY-174 si4135 50 33g 13.0MHz TCXO LP2980 LP2980AIM-3.0
Text: Preliminary Rev. 0.5 35 Si4133/ 33G -EVB Figure 49. Si4136BT Component Figure 50 . Si4136BT Ground , Si4133/ 33G -EVB EVALUATION BOARD FOR THE SYNTHESIZER FAMILIES Description The Si4133/Si4133G , Rev. 0.5 4/01 Copyright © 2001 by Silicon Laboratories Si4133/ 33G -EVB-05 Si4133/ 33G , the synthesizers are ac-coupled and matched to a 50 load impedance. SMA connectors are provided for , , Vc, is fixed at 2 Preliminary Rev. 0.5 Si4133/ 33G -EVB AUXOUT The AUXOUT pin of the


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PDF Si4133/33G-EVB Si4133/Si4133G Si4133 Si4133G Si4133G-X2 Si4113G-X5 Si4114G Si4133W Si4135 Si4136 CR0402-16W-000T 74LVTH241 Header 13X2 RA2EJ2-6G RTVY-174 si4135 50 33g 13.0MHz TCXO LP2980 LP2980AIM-3.0
2006 - 50 33g

Abstract: FON QFN Thermal Shut Down Functioned MOSFET MAX5954 2105w
Text: 3 4 5 6 7 8 N.C. N.C. N.C. N.C. 3.3VAUXIN 3.3VAUXO PWRGD FAULT 3.3G 9 , ) 12S, 12S-, 3.3G .-0.3V to (V12VIN + 0.3V) 3.3VAUXIN, ON, FAULT , = 3.3V, PWRGD = FAULT = PORADJ = TIM = OUTPUT = 12G = 3.3G = OPEN, INPUT = PRES-DET = PGND = GND , regulation, V12VIN - V12S_ 1V, V12G_= 5V 50 120 180 mA I12G = 1µA 4.8 5.3 5.8 V Referred to V12VIN, I12G_ = 1µA (Note 2) 3.0 4 4.8 V 1 V12GH 5 50 µA 20


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PDF 160ms T4866-1. 50 33g FON QFN Thermal Shut Down Functioned MOSFET MAX5954 2105w
2011 - 50 33g

Abstract: No abstract text available
Text: Si4133/ 33G -EVB E VALUATION B OA RD F O R T H E S YNTHESIZER F AMILIES Description The Si4133 , 11/11 Copyright © 2011 by Silicon Laboratories Si4133/ 33G -EVB Si4133/ 33G -EVB Functional , the synthesizers are ac-coupled and matched to a 50  load impedance. SMA connectors are provided , provides filtering for 2 Rev. 0.6 Si4133/ 33G -EVB AUXOUT The AUXOUT pin of the frequency , PWDNB provided by external generator connected to PWDNB/GND test points. Rev. 0.6 3 Si4133/ 33G


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PDF Si4133/33G-EVB Si4133/Si4133G Si4133 Si4133G Si4133G-X2 Si4113G-X5 Si4114G Si4135 Si4136 50 33g
2004 - 50 33g on

Abstract: FON QFN Thermal Shut Down Functioned MOSFET MAX5946 MAX5946AETX MAX5946LETX
Text: 50 150 250 µA 3.3G _ Gate Discharge Current I3.3G_DIS Output short-circuit , _ = VFON_ = 3.3V, PWRGD_ = FAULT_ = PORADJ = TIM = OUTPUT_ = 12G_ = 3.3G _ = OPEN, INPUT_ = PRES_DET , , V12G_ = 2V 50 150 250 µA 12G_ Gate Discharge Current I12G_DIS Output short-circuit condition, strong gate pulldown to regulation, V12VIN - V12S_ 1V, V12G_= 5V 50 120 180 mA , 3.3G _ = OPEN, INPUT_ = PRES_DET_ = PGND = GND, TA = -40°C to +85°C, unless otherwise noted. Typical


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PDF 160ms MAX5946 50 33g on FON QFN Thermal Shut Down Functioned MOSFET MAX5946 MAX5946AETX MAX5946LETX
Not Available

Abstract: No abstract text available
Text: Features • 50 MHz EDO performance • 256K x 16 Multiport Video RAM • FLASH WRITE with WPBM- 512 , can be loaded using the Load Mask Register (LMR) cycle. 33G 0307 M M D V 0 1 D S U -0 3 R e v is , Assignments RE CË V CC E TRG l _ 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 , – 33G 0307 M M D V 0 1 D S U -0 3 R e v is e d 1 1 /9 5 IBM025160 IBM025161 IBM025170 , possible 256 starting locations for the next Serial Read/Write cycle for the Serial port. 33G 0307 M M


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PDF IBM025160 IBM025161 IBM025170 IBM025171 110ns
025161LG5D-60

Abstract: CD 4751 025161LG5D-6H 025170LG5D-60
Text: x 16 Multiport Video RAM • 50 MHz EDO performance • Performance: • FLASH WRITE with W , ) mode with a stop address of 128 bit (or less). 33G 0307 SA14-4751 -05 Revised 3/98 Unique , 25 26 27 28 29 30 31 32 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 , □ p LCE, UCE JRow Enable 33G 0307 SA14-4751 -05 Revised 3/98 IBM025160 IBM025170 , possible 256 starting locations for the next Serial Read/Write cycle for the Serial port. 33G 0307


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PDF IBM025160 IBM025161 IBM025170 IBM025171 110ns 025161LG5D-60 CD 4751 025161LG5D-6H 025170LG5D-60
2011 - Not Available

Abstract: No abstract text available
Text: Datasheet R8C/ 33G Group, R8C/33H Group RENESAS MCU 1. R01DS0091EJ0100 Rev.1.00 Jul. 05, 2011 Overview 1.1 Features The R8C/ 33G Group, R8C/33H Group of single-chip MCUs , , reduces the number of system components. The R8C/ 33G Group has data flash (1 KB × 4 blocks) with the , Rev.1.00 Jul. 05, 2011 Page 1 of 54 R8C/ 33G Group, R8C/33H Group 1.1.2 1. Overview Specifications Tables 1.1 and 1.2 outline the Specifications for R8C/ 33G Group. Tables 1.3 and 1.4 outline the


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PDF R8C/33G R8C/33H R01DS0091EJ0100
2011 - R5F21334HJFP

Abstract: R5F21336GJFP
Text: Datasheet R8C/ 33G Group, R8C/33H Group RENESAS MCU R01DS0091EJ0100 Rev.1.00 Jul. 05, 2011 1. 1.1 Overview Features The R8C/ 33G Group, R8C/33H Group of single-chip MCUs incorporates the R8C , system components. The R8C/ 33G Group has data flash (1 KB × 4 blocks) with the background operation (BGO , Page 1 of 54 R8C/ 33G Group, R8C/33H Group 1. Overview 1.1.2 Specifications Tables 1.1 and 1.2 outline the Specifications for R8C/ 33G Group. Tables 1.3 and 1.4 outline the Specifications


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PDF R8C/33G R8C/33H R01DS0091EJ0100 R8C/33Gctronics R5F21334HJFP R5F21336GJFP
2010 - R5F21334

Abstract: PLQP0032GB-A R5F21336 R5F21336HJFP R5F21334HJFP 2C46 r5f21334h R5F21336G
Text: / 33G Group, R8C/33H Group RENESAS MCU 1. REJ03B0306-0010 Rev.0.10 Jul. 21, 2010 Overview 1.1 Features The R8C/ 33G Group, R8C/33H Group of single-chip MCUs incorporates the R8C CPU core , of system components. The R8C/ 33G Group has data flash (1 KB × 4 blocks) with the background , document are tentative and subject to change. R8C/ 33G Group, R8C/33H Group 1.1.2 1. Overview Specifications Tables 1.1 and 1.2 outline the Specifications for R8C/ 33G Group. Tables 1.3 and 1.4 outline the


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PDF R8C/33G R8C/33H REJ03B0306-0010 includ9044 R5F21334 PLQP0032GB-A R5F21336 R5F21336HJFP R5F21334HJFP 2C46 r5f21334h R5F21336G
2004 - MAX5946

Abstract: MAX5946AETX MAX5946LETX SI7448DP-T1
Text: 50 150 250 µA 3.3G _ Gate Discharge Current I3.3G_DIS Output short-circuit , _ = VFON_ = 3.3V, PWRGD_ = FAULT_ = PORADJ = TIM = OUTPUT_ = 12G_ = 3.3G _ = OPEN, INPUT_ = PRES_DET , , V12G_ = 2V 50 150 250 µA 12G_ Gate Discharge Current I12G_DIS Output short-circuit condition, strong gate pulldown to regulation, V12VIN - V12S_ 1V, V12G_= 5V 50 120 180 mA , 3.3G _ = OPEN, INPUT_ = PRES_DET_ = PGND = GND, TA = -40°C to +85°C, unless otherwise noted. Typical


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PDF 160ms MAX5946 MAX5946 MAX5946AETX MAX5946LETX SI7448DP-T1
2007 - pcie Design guide

Abstract: 12v output CIRCUIT DIAGRAM pcie IRF N-Channel Power MOSFETs 3SB diode 12v regulated power supply IN5819 datasheet resistor b 33g pcie X1 edge connector Thermal Shut Down Functioned MOSFET
Text: ) 12S_+, 12S_-, 3.3G _ .-0.3V to (V12VIN + 0.3V) 3.3VAUXIN, ON_, FAULT , 12G_ = 3.3G _ = OPEN, INPUT_ = PRES-DET_ = PGND = GND, TA = TJ = -40°C to +85°C, unless otherwise , 13.2V 1 2.5 mA 49 54 59 mV V12G_ = GND 4 5 6 µA 50 150 250 , _ = 3.3G _ = OPEN, INPUT_ = PRES-DET_ = PGND = GND, TA = TJ = -40°C to +85°C, unless otherwise noted , .3G_ = 2V 50 150 250 µA Output short-circuit condition, strong gate pulldown to


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PDF MAX5959/MAX5960 MAX5959/MAX5960s' MAX7313. 12x12x1 MAX5959/MAX5960 pcie Design guide 12v output CIRCUIT DIAGRAM pcie IRF N-Channel Power MOSFETs 3SB diode 12v regulated power supply IN5819 datasheet resistor b 33g pcie X1 edge connector Thermal Shut Down Functioned MOSFET
LM 33G

Abstract: AX135 50 33g
Text: 256K x 16 Multiport Video RAM · Performance: Param eter 50 MHz EDO performance FLASH WRITE with , Mask Register (LMR) cycle. 33G 0307 S A 1 4 -4 7 5 1 -0 5 R evised 3 /9 8 © IBM C orporation , SD Q 12 53 P D Q 1 2 52 - IV s s 51 SDQ11 50 P D Q 1 1 49 S D Q 10 48 I D Q 10 47 P V cc 46 SDQ9 , , UCE P NC P A0 I A1 P A2 P A3 IV s s 33G 0307 S A 1 4 -4 7 5 1 -0 5 R e v is e d 3 /9 8 , Serial port. 33G 0307 S A 1 4 -4 7 5 1 -0 5 R e v is e d 3 /9 8 ©IBM Corporation, 1995. All rights


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PDF IBM025160 IBM025161 IBM025170 IBM025171 LM 33G AX135 50 33g
2007 - resistor b 33g

Abstract: No abstract text available
Text: _-, 3.3G _ .-0.3V to (V12VIN + 0.3V) 3.3VAUXIN, ON_, FAULT_, PWRGD , VFON_ = 3.3V, PWRGD_ = FAULT_ = PORADJ = TIM = OUTPUT_ = 12G_ = 3.3G _ = OPEN, INPUT_ = PRES-DET_ = PGND , , (V12S+ - V12S-) 1V, V12G_ = 5V I12G_ = 1µA Referred to V12VIN, I12G_ = 1µA (Note 2) 49 4 50 54 5 150 59 , PORADJ = TIM = OUTPUT_ = 12G_ = 3.3G _ = OPEN, INPUT_ = PRES-DET_ = PGND = GND, TA = TJ = -40°C to +85°C , Current-Limit Threshold (V3.3S_+ - V3.3S_-) 3.3G _ Gate Charge Current V3.3ILIM I3.3G_,CHG V3.3G_ = GND Normal


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PDF MAX5959/MAX5960 MAX5959/MAX5960s' MAX7313. TQFP12x12mm 12x12x1 MAX5959/MAX5960 resistor b 33g
2007 - T5677-1

Abstract: MAX5957 MAX7313 qfn 48l
Text: ) 12S_+, 12S_-, 3.3G _ .-0.3V to (V12VIN + 0.3V) 3.3VAUXIN, ON_, FAULT , 3.3G _ = OPEN, INPUT_ = PRES-DET_ = PGND = GND, TA = TJ = -40°C to +85°C, unless otherwise noted , turn-off, ON_ = GND, V12G_ = 2V 12V Supply Current Hysteresis 50 150 250 µA Output , 3.3G _ = OPEN, INPUT_ = PRES-DET_ = PGND = GND, TA = TJ = -40°C to +85°C, unless otherwise noted , .3G_ = 2V 50 150 250 µA Output short-circuit condition, strong gate pulldown to


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PDF MAX5957/MAX5958 MAX5957/ MAX5958s' MAX7313. MAX5957/MAX5958 T5677-1 MAX5957 MAX7313 qfn 48l
2002 - marking 27G

Abstract: SS6638-30G Step-up DC/DC Converter marking sot-23 DA27P Step-up DC/DC Converter sot-23-3 sot-23 MARKING GU marking we sot-23 diode MARKING 30g DA33P SS6638-30GX
Text: SS6638-27G 42 SS6638-30G 50 SS6638- 33G Supply Current UNIT 60 SS6638-45G 2 , 150 175 50 200 0 25 50 75 Output Current (mA) Fig. 26 SS6638- 33G Load , CIRCUIT VIN VOUT L1 100µH + C1 SW 22µF D1 SS12 SS6638-27G SS6638-30G SS6638- 33G , 27: 2.7V 30: 3.0V 33: 3.3V 45: 4.5V 50 : 5.0V Example: SS6638-27GXTR 2.7V output in , -27G SS6638-30G SS6638- 33G SS6638-45G VOUT SS6638-50G + C2 47µF GND Fig. 1 Test Circuit 1 IS


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PDF SS6638G OT-23, OT-89 SS6638G marking 27G SS6638-30G Step-up DC/DC Converter marking sot-23 DA27P Step-up DC/DC Converter sot-23-3 sot-23 MARKING GU marking we sot-23 diode MARKING 30g DA33P SS6638-30GX
2004 - Not Available

Abstract: No abstract text available
Text: 50 150 250 µA 3.3G _ Gate Discharge Current I3.3G_DIS Output short-circuit , 12G_ = 3.3G _ = OPEN, INPUT_ = PRES_DET_ = PGND = GND, TA = -40°C to +85°C, unless otherwise noted , µA Normal turn-off, ON_ = GND, V12G_ = 2V 50 150 250 µA 12G_ Gate Discharge , _ ≥ 1V, V12G_= 5V 50 120 180 mA 12G_ Gate High Voltage (V12G_ - V12VIN) V12G_H , 3.3G _ = OPEN, INPUT_ = PRES_DET_ = PGND = GND, TA = -40°C to +85°C, unless otherwise noted. Typical


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PDF MAX5946AETX MAX5946LETX 12VIN MAX5946 MAX5946
Not Available

Abstract: No abstract text available
Text: subject to change without notice. Si41 33G -X2 S I L I C O N L A B O R A T O R I E S Si4133G-X2 , . 32 4 3 S I L I C O N L A B O R A T O R I E S S i 4 1 33G -X2 Electrical Specifications , SCLK, SDATA, SENB, PWDNB and XIN. 4 S I L I C O N L A B O R A T O R I E S Si41 33G -X2 Table , Ì 4 1 33G -X2 Table 4. Serial Interface Timing (VD = 2.7 to 3.6 V, Ta = -2 0 to 85°C) D S ym b , €” ns SCLK Rise Time tr Figure 1 — — 50 ns SCLK Fall Time tf Figure 1


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PDF Si4133G-X2 24-Pin 28-Pin
2014 - transistor SMD 33g

Abstract: No abstract text available
Text: User’s Manual R8C/ 33G Group, R8C/33H Group 16 User’s Manual: Hardware RENESAS MCU , the manual for details. The following documents apply to the R8C/ 33G Group, R8C/33H Group. Make sure , . Document Title Document No. R8C/ 33G Group, R01DS0091EJ0100 R8C/33H Group Datasheet R8C/ 33G Group, This , . 16 3.1 3.2 R8C/ 33G Group , . 41 45 45 46 46 47 48 49 50 51 52 53 53 53 53 54 55 57 I/O Ports


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PDF R8C/33G R8C/33H R01UH0252EJ0110 transistor SMD 33g
2002 - Not Available

Abstract: No abstract text available
Text: (HMC) Package Type Power Rating (Watts) @ 70°C 0.063W 0.1W 0.125W Maximum Working Voltage* 50 150 200 , /°C ±1500 ppm/°C ±500 ppm/°C ±1500 ppm/°C Ohmic Range and Tolerance 10% 43M ­ 1G 1.2G ­ 3.3G 43M ­ 1G 1.2G ­ 4.7G 43M ­ 1G 1.2G ­ 4.7G 20% 43M ­ 1G 1.2G ­ 3.3G 43M ­ 1G 1.2G ­ 4.7G 43M ­ 1G 1.2G ­ 4.7G , Rating (Watts) @ 70°C 0.063W 0.1W 0.125W Maximum Working Voltage* 50 150 200 Maximum Overload Voltage 100 , /°C ±1500 ppm/°C Ohmic Range and Tolerance 10% 43M ­ 1G 1.2G ­ 3.3G 43M ­ 1G 1.2G ­ 4.7G 43M ­ 1G 1.2G


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PDF 120tics 15VDC,
2002 - 5A/MX25L512AMC-12G

Abstract: No abstract text available
Text: Tolerance 1/16 0603 0.063W 50 100 ±500 ppm/°C ±1500 ppm/°C 43M – 1G 1.2G – 3.3G 43M – 1G 1.2G – 3.3G 1/10 0805 0.1W 75 150 ±500 ppm/°C ±1500 ppm/°C , Tolerance 1/16 0603 0.063W 50 100 ±500 ppm/°C ±1500 ppm/°C 43M – 1G 1.2G – 3.3G 43M – 1G 1.2G – 3.3G 1/10 0805 0.1W 75 150 ±500 ppm/°C ±1500 ppm/°C


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PDF 15VDC, 5A/MX25L512AMC-12G
025171NG5D-60

Abstract: 025161NG5D-60 IBM02516 025170LG5D-70 025170LG5D-60
Text: .8 V - - 1 III : Load - - t 50 PI : 1 TTL + 30 PF 33G 0307 S A 1 4-4751 -03 Revised 11/95 , R ) cycle. 33G 0307 S A 1 4-4751 -03 Revised 11/95 ©IBM C orporation, 1995. All rights , 20 21 22 23 24 25 26 27 28 29 30 31 32 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 , SDQ10 DQ10 Vcc SDQ9 DQ9 S DQ 8 DQ8 Vss DSF NC CE, UCE NC A0 A1 A2 A3 Vss 33G 0307 S A 1 4 , R ead/W rite cycle for the Serial port. 33G 0307 S A 1 4-4751 -03 Revised 11/95 ©IBM C


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PDF IBM025160 IBM025161 IBM025170 IBM025171 110ns 025171NG5D-60 025161NG5D-60 IBM02516 025170LG5D-70 025170LG5D-60
2006 - 269-5G

Abstract: 269ajg 269-5G regulator 269-3G 33269T-5 2695g TRANSISTOR 269-5G 69-12G 269aj 33269t-33
Text: MC33269ST-3.3T3 MC33269ST-3.3T3G MC33269T-3.3 MC33269T- 3.3G MC33269D- 5.0 MC33269D-5.0G MC33269DR2- 5.0 , ) DPAK DT SUFFIX CASE 369C NC Vout NC · 3.3 V, 5.0 V, 12 V and Adjustable Versions · · · · · · · · , 3.3 V 3.3 V MC33269D- 5.0 MC33269DT- 5.0 MC33269T- 5.0 MC33269D-012 MC33269DT-012 NCV33269DTRK-012* MC33269T-012 5.0 V 5.0 V 5.0 V 12 V 12 V 12 V 12 V 1 (Top View) Heatsink surface (shown as terminal 4 in , Internally Limited 65 5.0 Internally Limited 156 15 -40 to +150 -40 to +125 -40 to +125 -55 to +150 4000 400


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PDF MC33269, NCV33269 MC33269/NCV33269 MC34plicable MC33269/D 269-5G 269ajg 269-5G regulator 269-3G 33269T-5 2695g TRANSISTOR 269-5G 69-12G 269aj 33269t-33
2000 - Not Available

Abstract: No abstract text available
Text: °C Maximum Working Voltage* 50 75 150 Maximum Overload Voltage 100 150 300 Resistance Temperature Coefficient , 10% 47M ­ 1G 1.2G ­ 3.3G 47M ­ 1G 1.2G ­ 4.7G 47M ­ 1G 1.2G ­ 4.7G 20% 47M ­ 1G 1.2G ­ 3.3G 47M ­ 1G


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PDF 15VDC,
2006 - 269-5G

Abstract: 269-5G regulator 269ajg 269-3G 269aj 2695g TRANSISTOR 269-5G sot-223 body marking D K Q F 33269T-5 MC33269
Text: (Pb-Free) 2500 Units / Tape & Reel TO-220 TO-220 (Pb-Free) 50 Units / Rail SO-8 MC33269D- 3.3G , -223 MC33269ST-3.3T3G SOT-223 (Pb-Free) 2500 Units / Tape & Reel MC33269T-3.3 MC33269T- 3.3G MC33269D- 5.0 , shutdown. http://onsemi.com 1 GND/Adj · 3.3 V, 5.0 V, 12 V and Adjustable Versions Vout , -3.3* MC33269T-3.3 MC33269ST-3.3 NC MC33269D- 5.0 MC33269DT- 5.0 MC33269T- 5.0 5.0 V 5.0 V 5.0 V , Limited 160 25 Internally Limited 65 5.0 Internally Limited 156 15 W °C/W °C/W W °C/W °C/W


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PDF MC33269, NCV33269 MC33269/NCV33269 MC34268 OT-223 MC33269/D 269-5G 269-5G regulator 269ajg 269-3G 269aj 2695g TRANSISTOR 269-5G sot-223 body marking D K Q F 33269T-5 MC33269
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