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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
1755956 - MSTBVA 2,5/24-G-5,08 Phoenix Contact Shortec Electronics 2,430 - -
1757462 - MSTBA 2,5/24-G-5,08 Phoenix Contact Shortec Electronics 2,430 - -
1759237 - MSTB 2,5/24-G-5,08 Phoenix Contact Shortec Electronics 2,430 - -
1788334 - UMSTBVK 2,5/24-G-5,08 Phoenix Contact Shortec Electronics 566 - -
1788949 - MSTBVK 2,5/24-G-5,08 Phoenix Contact Shortec Electronics 558 - -
BSTC-210-D-125-24-G-570-LF Major League Electronics Future Electronics - $1.27 $1.15

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27C510

Abstract: pc51020 SMJ27C510 pc510-20
Text: READ-ONLY MEMORY SMLS51OA-AUGUST 1990-REVISED JANUARY 1993 Organization . . . 64K x 8 Single 5 -V Power , 15[ 3 A 12[ 4 A 7[ 5 A 6[ 6 A 5 [ 7 A 4[ 8 A 3[ 9 A 2[ 10 A 1 [ 11 A 0[ 12 D Q 0[ 13 DQ1 [ 14 D Q 2[ 15 G N D [ 16 32 ] VCc 31 ] NC 30 ] NC 29 ] A14 28 ] A13 27 ] A8 26 ] A9 25 ] A11 24 ] G 23 ] A10 , MIL-STD-883C Class B High Reliability Processing (SMJ27C510) FM PACKAGEt (TOP VIEW) S! 5 < < 4 A7 ] 5 A6 A4 o Z > & 8 o > 2 O Z 3 2 1 32 31 30 r 29[ A 14 ]e ]8 o 28[ A


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PDF TMS27C510 288-BIT TMS27PC510 SMLS51OA-AUGUST 1990-REVISED 27C510-12 27C/PC510-15 27C/PC510-17 27C/PC510-20 27C510 pc51020 SMJ27C510 pc510-20
DL 92 tube

Abstract: No abstract text available
Text: Peak Pulse Voltage TM SERI ES S U R G E P A K TM Hybrid Transient Voltage Suppressor , infinite surge life T G R Dimensions in inches and (millimetres) MECHANICAL DATA British Telecom , /Ns (NEMP) Typical Surge Current (8/20ys) Alternating discharge 600V AC, 5 x 1 sec. Tj, T stg R(ins) C(tot) VuR Vc dv/dt hsM Itrm SL22-300 -20°C to +70°C >10 <30 1 5 0 -2 5 0 250 600 5 5 s/c SL22-1000 -20°C to +70°C >10 <30 2 1 0 -3 1 0 350 600 5 5 s/c Units °C Mn PF Volts Votts Volts/Ns KAmps Amps Amps


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PDF 6137S8 DO-35 DO-35 DO-41 DO-15 DO-201AD DL 92 tube
27C510

Abstract: pc51020 27C510-12 27C510-15 PC510-20 LA5524 memory device programers
Text: -BIT PROGRAMMABLE READ-ONLY MEMORY SMLS510A-AUGUST1990-REVISED JANUARY 1993 Organization . . . 64K x 8 Single 5 , 30 4 29 5 28 6 27 7 26 8 25 9 24 10 23 11 22 12 21 13 20 14 19 15 18 16 17 VCC NC NC A14 A13 A8 A9 A11 G A10 Ë DQ7 DQ6 DQ5 DQ4 DQ3 LH M E— Cl E- tr _D a 5 29[ A14 A6 ]6 O 28[ A13 A5 ]7 27[ A8 A4 ]8 26[ A9 A3 ]9 25[ A11 A2 ]10 24[ G A1 311 23[ A10 AO ]12 22[ Ë DQ0 ]13 21[ DQ7 14 15 16 17 18 19 20


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PDF TMS27C510 288-BIT TMS27PC510 SMLS510A-AUGUST1990-REVISED 27C510-12 27C/PC510-15 27C/PC510-17 27C/PC510-20 27C/PC510-25 27C510 pc51020 27C510-12 27C510-15 PC510-20 LA5524 memory device programers
27PC512NL

Abstract: TMS27PC512 27C512jl
Text: View ) A15 [ A12[ A7[ A6[ A5[ A4[ A3[ U 1 2 3 4 5 6 7 8 g 10 11 12 13 14 28 ] v c c 27 ] A 1 4 26 ] A 1 3 25 ] A 8 24 ] A 9 23 ] A11 22 ] G / V p p 21 ] A 1 0 20 ] Ë 19 ] D Q 8 18 ] D Q 7 17 ] D Q 6 , , all bits are verified with V qq = 5 V, G / V p p = V|[_ and E = V|_. program inhibit Programming , 5.5 V V o = 0 to V c c G / V pp = 13V V c c = 5-5 V, E = V|H V c c = 5 5 V. E = V c c V C C " 5.5 V, Ë , C /P C 5 1 2 -1 0 M IN ta (A) t a (E) l en( G ) A cce ss tim e fro m add ress A cce ss tim e fro m


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PDF TMS27C512 288-BIT TMS27PC512 LS512D- TMS27C512s TMS27PC512S 27PC512NL 27C512jl
27C510

Abstract: pc51020 27C510-12 27C510-25 27C510-15 PC510
Text: -BIT PROGRAMMABLE READ-ONLY MEMORY SMLS51 OA-AUGUST 1990-REVISED JANUARY 1993 Organization . . . 64K x 8 Single 5 , packagesî (top view) Vpp[ 32 ]vCc NC[ 2 31 ]nc a15[ 3 30 ] nc a12[ 4 29 ] a14 a7[ 5 28 j a13 a6[ 6 27 ]a8 a5[ 7 26 j a9 a4[ 8 25 j a11 a3[ g 24 ] G a2[ 10 23 j a10 a1[ 11 22 a0[ 12 21 j , A4 ]8 26[ A9 A3 ]9 25[ A11 A2 ]10 24[ G A1 311 23[ A10 AO ]12 22[ Ë DQ0 ]13 21[ DQ7 14 15 16 , E Chip Enable G Output Enable GND Ground NC No Connection DQ0-DQ7 Inputs (programming


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PDF TMS27C510 288-BIT TMS27PC510 SMLS51 1990-REVISED 27C510-12 27C/PC510-15 27C/PC510-17 27C/PC510-20 27C510 pc51020 27C510-12 27C510-25 27C510-15 PC510
TMS27C512

Abstract: 27c512j TMS27C
Text: Single 5 -V Power Supply Pin Compatible With Existing 512K MOS ROMs, PROMs, and EPROMs All Inputs/Outputs Fully TTL Compatible Max Access/Min Cycle Time J AN D N PA C K A G E S t (TOP VIEW) A 15[ 1 A12[ 2 A7[ 3 A6[ 4 A5[ 5 A4[ 6 A3[ 7 A2[ 8 A1[ 9 A 0 [ 10 D Q 0 [ 11 DQ1 [ 12 D Q 2 [ 13 G N D [ 14 u 28 ] V Cc 27 ] A14 26 ] A13 25 ] A 8 24 ] A 9 23 ] A11 22 ] G IV p p 21 ] A10 20 ] E 19 ] DQ7 18 , routine is complete, all bits are verified with VCC = 5 V, G / Vpp = V|L_and E = ViL. program inhibit


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PDF TMS27C512 288-BIT TMS27PC512 SMLS512E-NOVEMBER 1985-REVISED TMS27C512S TMS27PC512s 27c512j TMS27C
pc510-20

Abstract: 27C510
Text: [ 5 A6[ 6 A5[ 7 A4[ 8 A3[ 9 A2[ A1[ A0[ DQ1 [ D Q 2[ D Q 3[ g n d 32 ] V CC 31 ] N C 30 ] N C 29 , ) A0-A1 5 E G G ND NC D 0 1 -D Q 8 V CC Vpp [ FM Package (Top View ) Q . O Q . OO O < < 2 > > z z , PROGRAMMABLE READ-ONLY MEMORY TMS27PC510 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY S M L S 5 1 0 - A U G U S T , c E * G 12 PR O M 65 5 3 6 X 8 AO A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 AH A12 A13 A14 A15 12 11 , page 7-65.) 5 . C o m m on test cond itions apply fo r the t(jjS excep t durin g program m ing


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PDF TMS27C510 288-BIT TMS27PC510 SMLS510 27C/PC510-120 27C/PC510-150 27C/PC510-170 27C/PC510-200 27C/PC510-250 pc510-20 27C510
TRANSISTOR C 557 B

Abstract: TRANSISTOR N3
Text: Non-Pulse M odulated Features E a s y o p e ra tio n m o n ito r in g w ith red L E D in d ic a to r R e s p o n s e fre q u e n c y as h ig h a s 1 K H z W id e o p e ra tin g v o lta g e , 5 , nn e ctin g m ethod Dim. dra w ing 5 (.1 9 7 )! 5 (.1 9 7 )! Light-O N/Dark-O N3 Light-O N , lays E a s y m o u n tin g a n d c o n n e c tio n Ordering Information S lot w id th / sensing d , Output lo g ic Supply vo lta ge T yp ical response fre q u e n cy A m b ie n t te m p e ra tu re


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PDF EE-SY671 EE-SY672 TRANSISTOR C 557 B TRANSISTOR N3
Semitron Industries

Abstract: thyristor td 330 n zener DO-41 semitron surge
Text: =CERAMIC CA SE PB-3=PLASTIC CASE (15 5 ) PB-6 250 MAX PB-3 200 MAX g F 4-26 T - 9 / - A Ò , Operating Range Max. Junction Temp. AC Discharge (600V, 5 x Is ) Symbol VDM IDM V(BO) Vp(BR) T10-P3230 200V , mA Suffix 200- F 220- G 240-H 260-J PULSE WAVEFORM TYPICAL VOLT AMPERE CHARACTERISTIC ! & I , -35 MiniMELF f - » - 3 5 ± 0 1 -H ' Cathode Mark , / - \ `O Q + 1 DL41 MELF Cathode Mark " T - 2 400' L i 0 3± 0 1 -04 5 oi UNIT=(mm) UNIT=(mm) A-405 0236(0 6)DIA


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PDF 813784-i DO-35 DO-35 DO-41 DO-15 DO-201AD Semitron Industries thyristor td 330 n zener DO-41 semitron surge
LT 5245

Abstract: No abstract text available
Text: ro p e r 1C h a n d lin g p ro c e d u re s s n c u ld be fo llo w e d 8-81 Specifications H I- 5 , (L o g ic Level Low ) = +0.8V; V e n - +2.4V . H I- 5 2 4 ·2 /-8 H I- 5 2 4 - 5 MAX M IN TY P MAX U N , G S P E C IF IC A T IO N S t ^ , A c c e s s T im e (N o te 5 ) to P E N - B re a k -B e fo re -M a n , le D e la y (O F F ). R l = 500XI S e ttlin g T im e (0.1 °a) {N o te 5 ) (0 01 °o} C ro s s ta lk (N , Characteristics and Test Circuits (Continued) TE S T C IR C U IT NO. 5 S E TT LIN G TIM E A C C ESS TIM E BREA K


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PDF I-524 -60dB 150ns 200ns I-524 10MHz. LT 5245
Not Available

Abstract: No abstract text available
Text: +0.8V; V e n = *2.4V HI-524 -2/-8 TYP HI-524 - 5 TYP PAR AM ETER A N A L O G C H A N N E L S P E C , ) A|_ C u rre n t (L o w ) S W IT C H IN G S P E C IF IC A T IO N S t^ . A ccess T im e (N o te 5 ) to , (O F F ). Rj_ = 50011 (0 .01 % ) S ettlin g T im e (0 .1% ) (N o te 5 ) C ro s stalk (N o te 6) C $ , -524 Performance Characteristics and Test Circuits (Continued) TE S T C IR C U IT N O . 5 S E T T L IN G TIM E A C , to e le c tro s ta tic d is c h a rg e P ro p e r IC h a n d lin g p ro c e d u re s s h o u ld be fo


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PDF -60dB 150ns 200ns HI-524 10MHz. HI-524
27C512JL

Abstract: 1985-REVISED TMS27C512 27pc512 Texas Instruments TTL 1985 TMS27PC512 -12nt 512K x 8 High Performance CMOS EPROM CODE ZA10 lt 637 27c512 1992
Text: A10 A11 A12 A13 A14 A15 Ë G /Vpp 21 23 26 27 20 22 AO Al 9 8 A3 7 6 A5 5 A6 4 A7 3 , x 8 Single 5 -V Power Supply Pin Compatible With Existing 512K MOS ROMs, PROMs, and EPROMs All , - < < < 2 S < < / I—11—11—11—II_II_11_I— „ 4 3 2 1 32 31 30 A6 ] 5 o 29[ A8 A5 ]6 28[ A9 A4 ]7 27[ A11 A3 ]8 26[ NC A2 ]9 25[ G /Vpp A1 ]10 24[ A10 AO ]11 23[ Ë NC ]12 22[ DQ7 DQ0 ]13 , Enable/Powerdown G /Vpp 13-V Programming Power Supply GND Ground NC No Internal Connection NU Make No


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PDF TMS27C512 288-BIT TMS27PC512 SMLS512E-NOVEMBER 1985-REVISED TMS27C512S TMS27PC512s 27C/PC512-10 27C/PC512-12 27C512JL 27pc512 Texas Instruments TTL 1985 TMS27PC512 -12nt 512K x 8 High Performance CMOS EPROM CODE ZA10 lt 637 27c512 1992
DF04 524

Abstract: RBI56 DL-41 package
Text: UJ tu ca ec i i o 5 NOTE: Glass Passivated Version Available with Suffix " G ". g ë ET UJ , =CERAMIC CA SE PB-3=PLASTIC CASE (15 5 ) PB-6 250 MAX PB-3 200 MAX g F 4-26 T - 9 /-AÒ S E M , 5 X Ta Ir pAdc Maximum Forward Voltage ® 25°C Ta IfM Apk Vfm Vpk 1.0 Ampere Glass , ~ ~ A 3 - 0 S - ' SEHITRON IN D U S T R I E S LTD 4 3E D fll37flfl e 5 0QGG2D3 M M S L C B Bridge Rectifiers Operating/Storage Temperature Range - 5 5 C to +150C C Maximum


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PDF DB101 DB102 DB103 DB104 DB105 DO-35 DO-35 DO-41 DO-15 DF04 524 RBI56 DL-41 package
Not Available

Abstract: No abstract text available
Text: 0.05 +25°C M SW ITCH IN G SPEC IFICATIO NS t ^ , Access Tim e (Note 5 ) t Q P E N - , T C IR C U IT NO. 5 S E TT LIN G T IM E , A C C ESS TIM E BREA K -BEFO R E-M AK E D E LA Y , pin s lab e led 'S IG G N D ’ (p in s 3,4 , 6 ,1 3 ,1 5 ) sh o u ld be e x te rn a lly c o n n e c , / jF) are recom m e n d ed fro m each H l- 5 2 4 su p p ly pin to pow e r g ro u n d (p in s 1 and 17 , HI-524 H I- 5 2 4 © HARRIS 4 Channel Wideband and Video Multiplexer Features


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PDF HI-524 -60dB 150ns 200ns I-524 10MHz, 18-Pin 18-Pln 20-Pin
Not Available

Abstract: No abstract text available
Text: (lAdc Apk Vpk 1 5 /2 5 /3 5 Ampere/MB-35 (High Conductivity Metal Case) MB1505 MB151 VIB152 , . Glass Passivated Version Available with Suffix " G ". Metal Bottom Plastic Case version available with , Unit = inch (mm) DL-35 MiniMELF f - » - 3 5 ± 0 1 —H ' Cathode Mark , /\ - DL41 MELF Cathode Mark “ T ‘O + 1 Q — - 2 400’ Li -04 5 oi 0 3± 0 , , 205(6 21 166(4 11 } 0(2 5 4) MIN 1 0(2 5 4» MIN ^ 1 0(25 4) MIN 205( 5 2) 166(4


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PDF fil37flà 000020b 25XTa Ampere/MB-35 MB1505 MB151 VIB152 1B154 AB156 MB158
U 3870

Abstract: No abstract text available
Text: a æ ry È $ 5 a _ (S B ffl3 iE ii) SCALE:2- I R EVISIO N RECORD G EN ERAL TO LER A N CES , . THICKNESS : l.6±0.05/(.063±.0 02) TOLERANCE NOT TO BE CUMULATIVE TO MATE WITH MOLEX : 5 2 3 4 0 - * * * I, 524 11-««« I 5 2 3 2 7 -* * I, 524 12-* I SEE S D - 5 2 4 0 9 - * * I (WITH METAL PEG) i n la , : mm G EN ERAL TO LER A N CES Sip RELEASED"«»« sans R EVISIO N RECORD sM M INS. RANGE DRAW , .0251SA524I0.DGN (A) 1.27 A A n n n n n a n n n n n a n n n a a I I a a g g g g g g g g l B g g g g g B g g M M M


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PDF UL94V-0 40uin. SD-524 0251S524 U 3870
1.5KE 4000

Abstract: T03P MPG06
Text: TABLES DEV IC E T YPE PA C KA G IN G INCH ES GL34 SURFACE MOUNT GL41 SURFACE MOUNT GF1 SURFACE , LENGTH Gl TAIWAN BULK PACKAGING QUANTITY PER p a c k a g in g G R O S S W EIGHT LBS. 0.55 1.03 , QUANTITY PER PA C KA G ING EA. 1000 1500 1500 100 50 25 G R O S S W EIGHT LBS. 1.23 1.38 1.50 .032 .101 , 5500 1400 5500 2500 800 1800/7500 750/3200 850/3500 CO M PO N EN T SP A C IN G " A " FIG. 1 In. mm .200 , /13.0 178/330 7.0/13.0 178/330 7.0/330 178/13.0 2.06 2.06 2.06 52.4 52.4 52.4 2.06 52.4 TAPE SP A CIN G


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PDF D0201AD DGC04AP D041/MPG06 O-220. GBPC12-35W GBPC12-35 1.5KE 4000 T03P MPG06
Not Available

Abstract: No abstract text available
Text: Bipolar i 5 x 10^S All electrical characteristics 25°C unless otherwise stated. FEATURES ■■â , G D l b M *ì O S L C B Electrical Characteristics @ 25°C Reverse Breakdown Voltage Type , 1488.2 1486.8 4Ä-5.4 53-5 9 5.86 6 6.4-7.2 5 5 5 5 4.2 4.7 5.2 5.7 5 5 2 1 , 5 5 1 1 6.3 6.9 7.7 8.5 0.5 0.2 0.05 0.01 9.6 10.0 11.4 12.3 15 12 11 10 113 12.1 13.4 14, 5 18 17 15 13.8 +.05 +.06 +.06 +.07 750 650 600 550 14811


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PDF 00Q01t 9305-F-078 DO-35 DO-41 DO-15 DO-201AD
Not Available

Abstract: No abstract text available
Text: 43E D ■01 3 7 0 0 ^ G G D D lb l 3 ■S L C B SE fllTRON I N D U S T R I E S B Z , ■Typical Ir less than 5 ji A above 10V ■Fast response time: typically less than l.OpS from 0 , Part Number Vz ± 5 %Voltage Tolerance Iz Rzohms A Typ. Max mA Volts Z7B3 , 2JS 2.0 2.0 15 LO 10 10 5 0.5 0.5 1.0 1.5 -0.08 -0.07 -0.06 -0.05 Z7B4.3 Z7B4 , BZY93C7VS BZY93C8V2 Z7B6.2 Z7B6.8 Z7B7.S Z7B8.2 5 .866 6.4-7.2 7.0-7.9 7.T-8.7 2.0 2.0 2.0


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PDF BS9305-F080 9305-F-080 DO-35 DO-41 DO-15 DO-201AD
Not Available

Abstract: No abstract text available
Text: , wetted-mercury-contact type driven by a 60 Hz 1J fads )K~ ^ 5 ¿ sine wave. Conduction time is 640 jxSec and it is , Unit = inch (mm) DL-35 MiniMELF f - » - 3 5 ± 0 1 —H ' Cathode Mark , /\ - DL41 MELF Cathode Mark “ T -2 400’ ‘O + 1 Q — Li -04 5 0 3± 0 1 UNIT , , 205(6 21 166(4 11 } 0(2 5 4) MIN 1 0(2 5 4» MIN ^ 1 0(25 4) MIN 205( 5 2) 166(4 1) D0-15 0 3 4( 9) m i 0 2 6 ( 7) D‘A 140(3 61 104(2 6) Uf 1 0(2 5 4) MIN 1 0(25


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PDF 000018t, IN3889-IN3893 7/16th DO-35 DO-15 DO-201AD
kpbc10

Abstract: diode 1N645 EFR135 DIODE 1N649 JTX1N4942 gp20 diode SMD zener diode 203 D041 RGP10E diode GP20 j
Text: 6ENL INSTR/ POüJER 2SE D 30^0137 G G Q 3 3 m T 7^9/~éC> Standard Silicon , 800 GL34K 1000 "B Y X 1 0 G P GL34M MPG06M« SURGE (A) 2.0 15 15 10 25 , 305 305 ·305 305 305 305 MAX. OFF ALIGNMENT M g l» FIG. 1 in. .047 .047 .047 .047 .047 .047 See Fig , mm to 5 mm (0 to .197") 5.01 mm to 10 mm (.197" to .394") Components spacing "A" Inside tape spacing , 3 1 T - 9/-P.O KG. BU LK P A C K A G IN G Component C ase Tvoe IN. Box Size CM Quantltv EA


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PDF GL-34 D0204MB MPG06 BYM05-50 MPG06A# 1N483B GL34A GP08A kpbc10 diode 1N645 EFR135 DIODE 1N649 JTX1N4942 gp20 diode SMD zener diode 203 D041 RGP10E diode GP20 j
Not Available

Abstract: No abstract text available
Text: 8/18/86 L . C AS TA GNA APPD AMP 1 7 5 6 -3 REV 7 - 9 0 20 H a r r ¡s b u r g , 8 , U.S. LOC AND BORE IGN D I ST AD 25 REV I 5 I0 N 5 PUBLICATION I N C O R P O R A T E D , HARR I S B U R G , P A . COVERED 2 ALL INTERNATIONAL PATENTS AND/OR , FIN ISH . GODD IN PHOSPHOR SHEET 5UUFI D E . D BRONZE. . 0 0 0 0 5 0 - . OOO100 N , E N D E D PC BD H O D E S A RE . 0 4 5 3 D I A WITH . 0 0 1 - . 0 0 3 COPPER S .0001 MINIMUM F I


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PDF OOO100 18-FEB-99
HI-524-5

Abstract: hi-524-2 l524s
Text: resistance m atches and tracks the channel ton resistance, to m inim ize the am plifier V g s and its , , request the H I-524/883 data sheet. A u g u st 1997 Features · Crosstalk (10M H z , -0524-2 HI4P0524- 5 HI3-0524-5 H11-0524-8 H11-0524/883 HI4-0524/883 TEMP. RANGE (°C ) 0 to 75 -55 to 125 0 to 75 0 , . -VsuPPLY -2 0V Either Supply to G Thermal Information Thermal Resistance (Typical, Note 1) 8j a (°C/W) 8j c (°C/W) CERDIP P a c k a g e


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PDF Hi-524 HI-524 10MHz. -60dB 2250pm HI-524-5 hi-524-2 l524s
Not Available

Abstract: No abstract text available
Text: SEMITRON I N D U S T R I E S LTD H3E D 013760=1 0 D Ü G 2 Q G T Œ S L C B RECTIFIERS , " Indicates Melf Surface Mount Pkg. l.S / 2 .0 Ampere/DO-15 -2 5 2 " IN 5391 IN 5392 IN 5393 IN , ) DL-35 MiniMELF f - » - 3 5 ± 0 1 —H ' Cathode Mark , /\ - DL41 MELF Cathode Mark “ T -2 400’ ‘O + 1 Q — Li -04 5 oi 0 3± 0 1 UNIT=(mm , 11 } 0(2 5 4) MIN 1 0(2 5 4» MIN ^ 1 0(25 4) MIN 205( 5 2) 166(4 1) D0-15 0


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PDF DO-35 DO-41 DO-15 DO-201AD
Not Available

Abstract: No abstract text available
Text: 0 2 + .2 3 1 0 0 'S s 3 a & E 1 1 1 i 5 - .0 0 4 — .23 - .4 , .0002 JEDEC Type Numbers * t g i g I JEOEC Registered Data i ' NOTE 1: Measured , -35 MiniMELF f - » - 3 5 ± 0 1 —H ' Cathode Mark , /\ - DL41 MELF Cathode Mark “ T ‘ O + 1 Q — - 2 400’ Li -04 5 oi 0 3± 0 1 UNIT=(mm) UNIT=(mm , 8( 7) - 10 7(2 7) 080(2 0) c -= - n o X , 0(2 5 4) 205(6 21 166


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PDF G00G173 500mW DO-35 DO-41 DO-15 DO-201AD
Supplyframe Tracking Pixel