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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
SP110-SM02-M SP110-SM02-M ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±250 Pa to ±2500 Pa - Multi Tray Datasheet
SP110-SM02-T SP110-SM02-T ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±250 Pa to ±2500 Pa - Single Tray Datasheet
SP160-SM02-C SP160-SM02-C ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±5K Pa to ±40K Pa - Cut Tape Datasheet
SP160-SM02-M SP160-SM02-M ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±5K Pa to ±40K Pa - Multi Tray Datasheet
SP160-SM02-T SP160-SM02-T ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±5K Pa to ±40K Pa - Single Tray Datasheet
SP110-SM02-C SP110-SM02-C ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±250 Pa to ±2500 Pa - Cut Tape Datasheet

5 Watt S-Band Power Amplifier Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 5 Watt S-Band Power Amplifier

Abstract: 2 Watt S-Band Power Amplifier s-band 50 Watt power amplifier S-band mmic Watt AM42-0055 CR-15 amplifier 1000 watt HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz S-Band Power Amplifier
Text: 1 Watt /2 Watt S-Band Power Amplifier AM42-0055 2.2 - 2.4 GHz V 1P.00 Preliminary , . Power Added Effiency Pin = +10 dBm 2.2 - 2.4 GHz % 30 typ. 29 typ. 1 Watt / 2 Watt S-Band Power Amplifier AM42-0055 V 1P.00 Absolute Maximum Ratings Parameter 2,3,4, 5 ,6 , S-Band Power Amplifier AM42-0055 V 1P.00 Typical Performance Curves 2 WATT PERFORMANCE LINEAR , 22 700 20 700 20 600 18 -10 - 5 0 5 Power out (dBm) 1300 32


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PDF AM42-0055 AM42-0055 CR-15 5 Watt S-Band Power Amplifier 2 Watt S-Band Power Amplifier s-band 50 Watt power amplifier S-band mmic Watt amplifier 1000 watt HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz S-Band Power Amplifier
2009 - 2 Watt S-Band Power Amplifier

Abstract: s-band 50 Watt power amplifier S-Band Power Amplifier s-band 50 Watt power amplifier DATASHEET AM42-0055 CR-15 MMIC s-band MMIC POWER AMPLIFIER S-BAND 2 Watt rf Amplifier HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz
Text: AM42-0055 1 Watt /2 Watt S-Band Power Amplifier 2.2 - 2.4 GHz Rev. V1 Features Outline , without notice. AM42-0055 1 Watt /2 Watt S-Band Power Amplifier 2.2 - 2.4 GHz Rev. V1 Absolute , ) or information contained herein without notice. AM42-0055 1 Watt /2 Watt S-Band Power Amplifier , /2 Watt S-Band Power Amplifier 2.2 - 2.4 GHz Rev. V1 Typical Performance Curves Ordering , /Output Broadband Matched Description M/A-COM's AM42-0055 is a two stage MMIC power amplifier in a


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PDF AM42-0055 AM42-0055 2 Watt S-Band Power Amplifier s-band 50 Watt power amplifier S-Band Power Amplifier s-band 50 Watt power amplifier DATASHEET CR-15 MMIC s-band MMIC POWER AMPLIFIER S-BAND 2 Watt rf Amplifier HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz
2003 - Not Available

Abstract: No abstract text available
Text: 1 Watt /2 Watt S-Band Power Amplifier 2.2 - 2.4 GHz Features V 1P.00 Preliminary AM42 , dB Ratio Ratio dBm dBm mA V mA % 1 Watt / 2 Watt S-Band Power Amplifier Absolute Maximum Ratings , product information. 1 Watt / 2 Watt S-Band Power Amplifier Typical Performance Curves AM42-0055 V , current (mA) 1 WATT PERFORMANCE POUT AND CURRENT VS PIN 32 30 Power out (dBm) 28 26 24 22 20 18 -10 - 5 , for additional data sheets and product information. 1 Watt / 2 Watt S-Band Power Amplifier Typical


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PDF AM42-0055 AM42-0055 CR-15
2014 - Not Available

Abstract: No abstract text available
Text: 47 dB Gain, 20 Watt , 3.1 GHz to 3.5 GHz, High Power High Gain Amplifier , 3.5 dB NF, SMA TECHNICAL , dB Gain, 20 Watt , 3.1 GHz to 3.5 GHz, High Power High Gain Amplifier , 3.5 dB NF, SMA PE15A5003 PE15A5003 REV 2 47 dB Gain, 20 Watt , 3.1 GHz to 3.5 GHz, High Power High Gain Amplifier , 3.5 dB NF , certifications: 47 dB Gain, 20 Watt , 3.1 GHz to 3.5 GHz, High Power High Gain Amplifier , 3.5 dB NF, SMA PE15A5003 PE15A5003 REV 3 47 dB Gain, 20 Watt , 3.1 GHz to 3.5 GHz, High Power High Gain Amplifier


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PDF PE15A5003 PE15A5003 com/47-db-gain-3 power-high-gain-amplifier-sma-pe15a5003-p
2014 - Not Available

Abstract: No abstract text available
Text: 45 dB Gain, 10 Watt , 3.1 GHz to 3.5 GHz, High Power High Gain Amplifier , 4 dB NF, SMA TECHNICAL , dB Gain, 10 Watt , 3.1 GHz to 3.5 GHz, High Power High Gain Amplifier , 4 dB NF, SMA PE15A5002 PE15A5002 REV 1 45 dB Gain, 10 Watt , 3.1 GHz to 3.5 GHz, High Power High Gain Amplifier , 4 dB NF, SMA , Power High Gain Amplifier , 4 dB NF, SMA PE15A5002 PE15A5002 REV 2 45 dB Gain, 10 Watt , 3.1 GHz , Power High Gain Amplifier , 4 dB NF, SMA PE15A5002 PE15A5002 REV 3 45 dB Gain, 10 Watt , 3.1 GHz


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PDF PE15A5002 PE15A5002 com/45-db-gain-3 power-high-gain-amplifier-sma-pe15a5002-p
2002 - 5 Watt S-Band Power Amplifier

Abstract: s-band 50 Watt power amplifier S-Band Power Amplifier MESFET MMIC POWER AMPLIFIER S-BAND 2W MMIC s-band S-band mmic MMIC AMPLIFIER S-BAND 2W MAAPGM0036-DIE RO-P-DS-3017
Text: sheets and product information. RO-P-DS-3017 - - 1W L/S-Band Power Amplifier 5 /6 , RO-P-DS-3017 - - MAAPGM0036-DIE 1.2W L/S-Band Power Amplifier 1.2-3.2 GHz Preliminary Information Features 1.2-3.2 GHz GaAs MMIC Amplifier 1.2-3.2 GHz Operation 1.2 Watt Saturated , output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each , /S-Band Power Amplifier 2/6 MAAPGM0036-DIE Maximum Operating Conditions 1 Parameter Absolute


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PDF RO-P-DS-3017 MAAPGM0036-DIE MAAPGM0036-Die 5 Watt S-Band Power Amplifier s-band 50 Watt power amplifier S-Band Power Amplifier MESFET MMIC POWER AMPLIFIER S-BAND 2W MMIC s-band S-band mmic MMIC AMPLIFIER S-BAND 2W
2002 - MMIC s-band amplifier

Abstract: 5 Watt S-Band Power Amplifier 2 Watt S-Band Power Amplifier MAAPGM0026-DIE MMIC POWER AMPLIFIER S-BAND MMIC s-band s-band 50 Watt power amplifier S-Band Power Amplifier S-band mmic S-Band Power Amplifier intercept point
Text: additional data sheets and product information. RO-P-DS-3013 - - 0.6 W L/S-Band Power Amplifier 5 /6 , RO-P-DS-3013 - - MAAPGM0026-DIE 0.6W L/S-Band Power Amplifier 0.8-3.3 GHz Preliminary Information Features 0.8-3.3 GHz GaAs MMIC Amplifier 0.8-3.3 GHz Operation 0.6 Watt Saturated , power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications


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PDF RO-P-DS-3013 MAAPGM0026-DIE MAAPGM0026-Die MMIC s-band amplifier 5 Watt S-Band Power Amplifier 2 Watt S-Band Power Amplifier MMIC POWER AMPLIFIER S-BAND MMIC s-band s-band 50 Watt power amplifier S-Band Power Amplifier S-band mmic S-Band Power Amplifier intercept point
2001 - S-Band Power Amplifier intercept point

Abstract: MAAPGM0047-DIE
Text: additional data sheets and product information. RO-P-DS-3040 - - 0.6 W L/S-Band Power Amplifier 5 /6 , RO-P-DS-3040 - - MAAPGM0047-DIE 0.5W Ku-Band Power Amplifier 16.0-19.5 GHz Preliminary Information Features 16.0-19.5 GHz GaAs MMIC Amplifier 16.0-19.5 GHz Operation 0.5 Watt , Primary Applications SatCom Description The MAAPGM0047-Die is a 3-stage, 0.5 W power amplifier , can be used as a power amplifier stage or as a driver stage in high power applications. Each device


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PDF RO-P-DS-3040 MAAPGM0047-DIE MAAPGM0047-Die S-Band Power Amplifier intercept point
2002 - S-Band Power Amplifier

Abstract: s-band 50 Watt power amplifier MMIC s-band S-Band Power Amplifier intercept point S-band mmic Watt 2 Watt S-Band Power Amplifier MMIC s-band amplifier S-band mmic 5 Watt S-Band Power Amplifier MAAPGM0027-DIE
Text: RO-P-DS-3014 - - MAAPGM0027-DIE 1W S-Band Power Amplifier 2.0-4.0 GHz Features Preliminary 2.0- 4.0 GHz GaAs MMIC Amplifier 2.0-4.0 GHz Operation 1 Watt Saturated Output Power Level , and product information. RO-P-DS-3014 - - 1W S-Band Power Amplifier 5 /6 MAAPGM0027-DIE , Wireless Local Loop MMDS Radar Description The MAAPGM0027-Die is a 2-stage 1 W power amplifier with , used as a power amplifier stage or as a driver stage in high power applications. Each device is 100


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PDF RO-P-DS-3014 MAAPGM0027-DIE MAAPGM0027-Die S-Band Power Amplifier s-band 50 Watt power amplifier MMIC s-band S-Band Power Amplifier intercept point S-band mmic Watt 2 Watt S-Band Power Amplifier MMIC s-band amplifier S-band mmic 5 Watt S-Band Power Amplifier
2 Watt S-Band Power Amplifier

Abstract: DC bias of gaas FET 300 watts amplifier s-band s-band 50 Watt power amplifier S-band mmic MMIC s-band 5 Watt S-Band Power Amplifier MIS us army MMIC s-band amplifier MMIC s-band attenuator
Text: system bus networks. The outstanding Fig. 5 An active phased array transmit element. power , devices. The 30 4 average power and PAE of the three20 3 stage driver amplifier are shown in OUTPUT , wellcharacterized process. The MSAG power FET produces 0.8 W/mm power density at 65 percent poweradded efficiency , of the highest power GaAs MMICs available. The practical power limit for a MSAG high power amplifier (HPA) is set by the ability to implement an efficient load line matching circuit for a given


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block diagram of telemetry

Abstract: voltage telemetry and its applications block diagram of telemetry system pll FM TRANSMITTER CIRCUIT DIAGRAM 1 transistor fm transmitter 5 watt IRIG simple heart rate monitor circuit diagram telemetry block diagram IRIG 106 block diagram telemetry
Text: W power amplifier MMIC's. Additionally, switching power regulation circuits were implemented , reconstruct the bit clock signal. The transmitter implements a 2 W power amplifier , a dual port voltage controlled oscillator, and a digitally programmable phase-locked loop. The 2 W MMIC power amplifier (PA , efficiency (PAE) and output power . The device operates from a single + 5 V supply voltage and also requires , amplifier has an output power of 33 dBm (2 W) and greater than 45% power added efficiency (PAE). The


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JR 200 RF TRANSMITTER

Abstract: IRIG modulator 2 Watt S-Band Power Amplifier ballistic sensor research paper on wireless peak detector s-band datasheet 100 watt fm transmitter l-band 60 watt transistor 5 Watt S-Band Power Amplifier 300 watts amplifier s-band
Text: 5 0 -2 0 -1 8 -1 6 -1 4 -1 2 -1 0 OUTPUT POWER (dBm) 1W/2W Power Amplifier : This device is a two-stage power amplifier constructed using a mature 0.5 um GaAs MESFET processes. Separate , 1- watt of output power and when operated at 8 volts provides 2-watts of output power . The , % stability in less than 500 µs after initial power is applied. This is shown in figure 5 . The transmitter , synthesizer/phase locked loop (PLL), and a family of power amplifiers (PA's). The chip-set is designed to


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PDF ARL-TR-1206, JR 200 RF TRANSMITTER IRIG modulator 2 Watt S-Band Power Amplifier ballistic sensor research paper on wireless peak detector s-band datasheet 100 watt fm transmitter l-band 60 watt transistor 5 Watt S-Band Power Amplifier 300 watts amplifier s-band
2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM

Abstract: abstract for fm transmitter two stage amplifier abstract for fm transmitter two stage IRIG B generator irig b converter block diagram of telemetry FE55-0006 block diagram fm transmitter IRIG B amplitude modulation transmitter circuit diagram
Text: amplifier MMIC's. Additionally, switching power regulation circuits were implemented within the module to , Card Telemetry Module, Transmitter, Power Amplifier , PCM Encoder, Voltage Controlled Oscillator, Power , can provide an output power level of up to 1 watt . There is a need for highly integrated, low , Frequency Response of Pre-Modulation Filter TRANSMITTER The transmitter implements a 1 W power amplifier , MMIC power amplifier is a 3-stage device, which is designed using small signal and nonlinear FET


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2009 - OPT05

Abstract: 1000 watt mosfet power amplifier 1094/BBM2E3KKO 300 watt mosfet amplifier
Text: Solid state power amplifier based solutions serving the defense, commercial and industrial markets , power devices, amplifier technology, and pertinent market knowledge to react swiftly to new , High Power Systems Model Markets ¬ www.EmpowerRF.com Amplifier Systems Products , equipment  Driver for high power amplifier systems 18 19 Additional Features ¬ As appearing , , including fwd/rev power indication (dB or watt scale), gain adjustment, ALC fast/slow, on/ off, standby


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IRIG modulator

Abstract: ballistic sensor 100 watt fm transmitter Wireless telemetry s-band 50 Watt power amplifier 1 transistor fm transmitter 5 watt abstract for fm transmitter two stage IRIG block diagram of telemetry system JR 200 RF TRANSMITTER
Text: decoupled gate and drain bias networks. When operated at 5 volts the device provides 1- watt of output power , 4 6 8 10 OUTPUT POWER (dBm) 1W/2W Power Amplifier : This device is a two-stage power , than 500 µs after initial power is applied. This is shown in figure 5 . The transmitter module is , family of power amplifiers (PA's). The chip-set is designed to operate over the military L and S Band , budgetary issues. Under the HSTSS program, M/A-COM has developed a very rugged, small, low cost, low power


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PDF ARL-TR-1206, IRIG modulator ballistic sensor 100 watt fm transmitter Wireless telemetry s-band 50 Watt power amplifier 1 transistor fm transmitter 5 watt abstract for fm transmitter two stage IRIG block diagram of telemetry system JR 200 RF TRANSMITTER
2002 - x-band mmic

Abstract: x-band power amplifier X-band marine radar x-band HPA 3 W S-Band high Power Amplifier 300 watts amplifier s-band x band power amplifiers
Text: -3007 - - 1W X-Band Power Amplifier 5 /6 MAAPGM0015-DIE Mechanical Information Chip Size: 4.98 , RO-P-DS-3007 - - MAAPGM0015-DIE 15W S-Band High Power Amplifier 2.6 ­ 3.4 GHz Preliminary , a 2-stage 15 W high power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage , RO-P-DS-3007 - - 1W X-Band Power Amplifier 2/6 MAAPGM0015-DIE Maximum Operating Conditions 1


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PDF RO-P-DS-3007 MAAPGM0015-DIE MAAPGM0015-Die x-band mmic x-band power amplifier X-band marine radar x-band HPA 3 W S-Band high Power Amplifier 300 watts amplifier s-band x band power amplifiers
2008 - Diode 1N5333B

Abstract: "Power over Ethernet"
Text: 1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION DESCRIPTION The , Power : 5 watts at TL < 25oC 3/8 inch (10 mm) from body, or 1.47 watts at TA = 25ºC when mounted on FR4 , : (480) 947-1503 Page 1 1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION , and P is the rated power for the method of mounting. NOTE 5 : The surge current (IZSM) is specified as , ) 941-6300, Fax: (480) 947-1503 Page 2 1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes


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PDF 1N5333B 1N5388B, 1N5333-5388B 1N5333B/TR8 IEEE802 lrwnapp002/Sourcing/Automation/Automation CPR/05162011/MSSD/1N5333B 18-May-2011 Diode 1N5333B "Power over Ethernet"
x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: . This design includes a power amplifier (3.5-W at 35% efficiency), LNA (3.5-dB NF), 5 -bit phase , of magnitude longer MTTF than the power amplifier shown in Figure 1. Lower Cost The , , achieving >10watts with 40% power-added efficiency. A typical 3-stage HPA (High Power Amplifier ) MMIC , independently optimized for power , low-noise, or switching performance. Selective implantation eliminates the , realization of Figure 1. (above) Arrhenius Plot of MSAG Power MMIC Accelerated RF Life Test (~2 dB


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2013 - Not Available

Abstract: No abstract text available
Text: results super-high-efficiency version* available: 5 Watt / 650 mA (typ) @ 28 Vdc ● * = option , POWER SUPPLY Supply Voltage Supply Current (6 W version, typ.) Supply Current ( 5 W none-isolated , ) Pin 11 Pin 4 (in) Pin 5 (in) Pin 3 (in) Pin 10 (out) Pin 9 Pin 1 (in) Pin 2 (in) Power , 2400 MHz * 6 W output power (0.1 W to 6 W programmable) modulation and power returns isolated from , ] software selectable data input: analog / TTL / RS422 (isolated from power & chassis) built-in real-time


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PDF D-60437 2300MHz 12Mbit 10MHz 10MHz
2004 - FMM5049

Abstract: S-Band Power Amplifier S-Band high Power Amplifier S-band mmic MMIC POWER AMPLIFIER S-BAND FMM5049VT MMIC s-band amplifier
Text: FMM5049VT L,S-Band Power Amplifier MMIC FEATURES High Output Power : Pout=41.0dBm (typ.) High , Voltage DC Input Voltage Input Power VDD1,2 VGG Pin 10 - 5 12 o Unit V V dBm ELECTRICAL , Amplifier MMIC OUTPUT POWER vs. FREQUENCY 44 42 40 VDD=10V, VGG=-5V [IDD(DC)=2495mA] OUTPUT POWER , L,S-Band Power Amplifier MMIC S-PARAMETER +50j +25j +100j +90° +10j +250j 2.2GHz 0 , 3 FMM5049VT L,S-band Power Amplifier MMIC Package Out Line 4 FMM5049VT L,S-Band Power


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PDF FMM5049VT FMM5049VT FMM5049 S-Band Power Amplifier S-Band high Power Amplifier S-band mmic MMIC POWER AMPLIFIER S-BAND MMIC s-band amplifier
2003 - s-band 50 Watt solid state power amplifier high p

Abstract: AN1038 application hybrid coupler 3dB 180 TRANS7 hf combiners AN1032 AN1038 NES2427P-60 150 watt amplifier advantages and disadvantages power combiner 4 watt VHF
Text: power E meet this N requirement, a compact amplifier was designed ABSTRACT This paper describes a , twotone signal for optimum IMD3 at a defined output power . The amplifier configuration was also an , Design Goals: The goal was to design a compact linear power amplifier using a 60 W class A-B "Twin" , low than -42dBc at 40dBm output power each tone across the 2.5-2.7 GHz MMDS bandwidth. Figure 5 , class A-B one. VII. CONCLUSION A balanced compact high linearity power amplifier using a "Twin"


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PDF AN1038 ato50 60-Watt s-band 50 Watt solid state power amplifier high p AN1038 application hybrid coupler 3dB 180 TRANS7 hf combiners AN1032 AN1038 NES2427P-60 150 watt amplifier advantages and disadvantages power combiner 4 watt VHF
2013 - Not Available

Abstract: No abstract text available
Text: ) amplifier design utilizing discrete RF GaAs FET transistors providing linear RF output power •• 2 W amplifier is a single module configuration housing the DC power supply and RF amplifier •• 4 W amplifier is a two-module configuration housing the DC power supply in a separate module •• Provides telemetry of DC current consumption, temperature, forward and reverse RF power •• Bias board ensures that the FET gate and drain voltages are sequenced correctly 2 W High-Power Amplifier •â


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PDF 2009-certified
2009 - combiner THEORY

Abstract: amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318
Text: % duty cycle and 100s pulse width, the amplifier delivers output power in the range of 401W to 446W , bandwidth. 5 Push-pull power combining topologies have been employed on the board to obtain 500W at , HEMT Amplifier Photograph Pulse Power Performance RF performance was evaluated after optimizing , efficiency. The amplifier was tested over the frequency range of 2.9GHz to 3.5GHz. Figure 5 . Measured saturated output power , and drain efficiency over the 2.9GHz to 3.5GHz frequency band. Fig. 5 shows the


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PDF WP100318 combiner THEORY amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318
2014 - Electronic warfare system

Abstract: No abstract text available
Text: > www.emcore.com | 5 Optiva Platform Rack-Mount, Portable & Outdoor Enclosures and Power Supplies Optiva , insert cards and redundant power supplies Optiva PS-200F 200 Watt , PS-9060 60 Watt and MiniHub Power , -200F 200 Watt Universal Power Supply is designed for the Optiva OT-CC-16F 19” 3 RU rack-mountable enclosure and Optiva MiniHub. The PS-9060 60 Watt Universal Power Supply is designed for the OT-CC-6 19â , modules n Dual-redundant hot-swappable power supplies n SNMP monitoring and control Optiva Card


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PDF much2015 Electronic warfare system
Not Available

Abstract: No abstract text available
Text: delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES · · High Output Power : : Po (i « ) = +23dBm typ. 16dBtyp. · High Linear Gain High Power Added Efficiency: 45% typ. @Vds =6 V, iD set = 50 , POWER GaAs MES FET DESCRIPTION The NE650R279A is a 0.2 W GaAs MES FET designed for middle power


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PDF NE650R279A NE650R279A NE6500379A 23dBm 16dBtyp.
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