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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
TM497FBK32I-70 Texas Instruments 4MX32 EDO DRAM MODULE, 70ns, QMA72, SIMM-72
TM893GBK32H-70 Texas Instruments 4MX32 EDO DRAM MODULE, 70ns, QMA72, SIMM-72
TM497FBK32H-60 Texas Instruments 4MX32 EDO DRAM MODULE, 60ns, QMA72, SIMM-72
TM497FBK32I-50 Texas Instruments 4MX32 EDO DRAM MODULE, 50ns, QMA72, SIMM-72
TM893GBK32H-50 Texas Instruments 4MX32 EDO DRAM MODULE, 50ns, QMA72, SIMM-72
TM497BBK32-60 Texas Instruments 4MX32 FAST PAGE DRAM MODULE, 60ns, SMA72, SIMM-72

4Mx32 dram simm Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - Not Available

Abstract: No abstract text available
Text: Memory Merge AVED4M322SSM4/LSM4 FAST PAGE MODE 4MX32 DRAM SIMM , 2K REFRESH, 5V ABSOLUTE MAXIMUM , 4MX32 DRAM SIMM , 2K REFRESH, 5V AC CHARACTERISITICS (continued) -50 STANDARD OPERATION Symbol , Quality & Memory Merge AVED4M322SSM4/LSM4 FAST PAGE MODE 4MX32 DRAM SIMM , 2K REFRESH, 5V NOTES 1 , MODE 4MX32 DRAM SIMM , 2K REFRESH, 5V FUNCTIONAL BLOCK DIAGRAM PACKAGE DIMENSIONS AVED Memory , DRAM SIMM , 2K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED4M322SSM4/LSM4


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PDF AVED4M322SSM4/LSM4 4MX32 AVED4M322SSM4/LSM4 24-pin 72-pin
4Mx32 dram simm

Abstract: HMD4M32M2VE
Text: HANBit HMD4M32M2VE 16Mbyte( 4Mx32 ) DRAM SIMM EDO MODE, 4K Refresh, 3.3V Part No. HMD4M32M2VE , or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM components. The , 36 NC 54 DQ26 72 VSS w Packages 72-pin SIMM M PERFORMANCE RANGE Speed , Vss URL:www.hbe.co.kr REV.1.0 (August.2002) 2 0.1uF or Capacitor for each DRAM 0.22uF , SIMM Design 107.95 mm 101.19 mm 3.18 ±0.51 R1.57 mm 3.38 mm 19.00 10.16 mm 6.35 mm R1


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PDF HMD4M32M2VE 16Mbyte 4Mx32) HMD4M32M2VE, HMD4M32M2VEG HMD4M32M2VE 50-pin 72-pin. 72-pin HMD4M32M2VE----Lead 4Mx32 dram simm
Not Available

Abstract: No abstract text available
Text: DRAM MODULE KMM5324000AK/AKG Fast Page Mode 4Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with , circuit board for each DRAM . The KMM5324000AK is a Single In-line Memory Module with edge connections and , . 221 ELECTRONICS DRAM MODULE FUNCTIONAL BLOCK DIAGRAM 16 Mega Byte CÄ5U ° ~ HÄ50 ° - CS5 , for each DRAM To all DRAMS 222 ELECTRONICS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item , Min Max 64 70 70 36 17 Unit pF PF pF pF PF 223 ELECTRONICS DRAM MODULE AC CHARACTERISTICS (0


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PDF KMM5324000AK/AKG 4Mx32 KMM5324000AK 24-pin 72-pin
KM44C4100AJ

Abstract: KM44C4100A KMM5324100AV
Text: DRAM MODULE_ j _ 16 Mega Byte KMM53241OOAV/AVG Fast Page Mode 4Mx32 DRAM SIMM , 2K Refresh , 5V / Using 16M DRAM with 400 mil Package . GENERAL DESCRIPTION The Samsung , decoupling capacitor is mounted on the printed circuit board for each DRAM . The KMM5324100AV is a Single , . 203 ELECTRONICS DRAM MODULE FUNCTIONAL BLOCK DIAGRAM 16 Mega Byte Vcc O-< - p_ L .22\iF Capacitor T lor each DRAM Vss o


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PDF KMM53241OOAV/AVG 4Mx32 KMM53241OOAV KMM5324100AV 24-pin 72-pin KM44C4100AJ KM44C4100A
M53241

Abstract: No abstract text available
Text: DRAM MODULE KMM53241OOAK/AKG Fast Page Mode 4Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with , circuit board for each DRAM . The KM M 5324100AK is a Single In-line M em ory sockets. M odule w ith edge , and specifications without notice. 215 ElfCTRONICS DRAM MODULE FUNCTIONAL BLOCK DIAGRAM 16 , -·- ^ Vss o-dp 1" for each DRAM To all DRAMS 216 ELECTRONICS DRAM MODULE ABSOLUTE , ClN4 CDQ1 Min - Max 64 70 70 30 17 Unit PF pF PF PF - 217 ELECTRONICS DRAM MODULE


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PDF KMM53241OOAK/AKG 4Mx32 KMM5324100AK 24-pin 72-pin 5324100AK M5324100AK KM44C4100AK M53241
44C4104

Abstract: KMM5324004BK kmm5324104 44C4104BK EZ 720
Text: DRAM MODULE KMM5324004BK/BKG KMM5324104BK/BKG KMM5324004BK/BKG & KMM5324104BK/BKG Fast Page with EDO Mode 4Mx32 DRAM SIMM , 4K & 2K Refresh GENERAL DESCRIPTION The Samsung KMM53240(1)04BK is a , ts of eigh t CMOS 4M x4bit DRAM s in 24-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A , used for only KMM5324004BK/BKG (4K ref.) 156 ELECTRONICS DRAM MODULE FUNCTIONAL BLOCK DIAGRAM , - , . _ ^ for each DRAM To all DRAMs 157 ELECTRONICS DRAM MODULE ABSOLUTE MAXIMUM RATINGS


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PDF KMM5324004BK/BKG KMM5324104BK/BKG KMM5324004BK/BKG KMM5324104BK/BKG 4Mx32 KMM53240 24-pin 72-pin KMM5324004BK 44C4104 KMM5324004BK kmm5324104 44C4104BK EZ 720
Not Available

Abstract: No abstract text available
Text: DRAM MODULE KM M5324000AV/AVG Fast Page Mode 4Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM , circuit board for each DRAM . The KMM5324000AV Is a Single In-line Memory Module with edge connections and , . reserves the right to change products and specifications without notice 71 ELECTRONICS DRAM MODULE , - · - X .22HF Capacitor "p 1or each DRAM o- · - To a| DRAMs 72 ELECTRONICS DRAM MODULE AB S O LU TE M A XIM UM R ATING S * Item


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PDF M5324000AV/AVG 4Mx32 KMM5324000AV 24-pin 72-pin
km44c4100ak

Abstract: No abstract text available
Text: DRAM MODULE KMM53241OOAKV/AKVG Fast Page Mode 4Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM , the printed circuit board for each DRAM . The KMM5324100AKV is a Single In-line Memory Module with edge , the right to change products and specifications without notice 77 ELECTRONICS DRAM MODULE , -;- L 22|iF Capacitor * ^ for each DRAM Vss o- j 0 a| DRAMs 78 ELECTRONICS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * _ Item_ Voltage on any pin


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PDF KMM53241OOAKV/AKVG 4Mx32 KMM5324100AKV 24-pin 72-pin km44c4100ak
Not Available

Abstract: No abstract text available
Text: KM M5324000B K/B KG KMM53241OOBK/BKG DRAM MODULE KMM5324000B K/B KG & KMM53241 OOBK/BKG Fast Page Mode 4Mx32 DRAM SIMM , 4K & 2K Refresh, using 16M DRAM with 300 mil Package FEATURES GENERAL , €¢ CAS-before-RAS refresh capability c irc u it b o a rd fo r ea ch DRAM . The KMM53240(1)C)0BK , KMM5324000BK/BKG KMM53241OOBK/BKG DRAM MODULE FUNCTIONAL BLOCK DIAGRAM DQO-3 DQ4-7 DQ8-11 DQ12 , €¢-_ L 0.1 or .22(iF Capacitor T for each DRAM Vss o- i


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PDF M5324000B KMM53241OOBK/BKG KMM5324000B KMM53241 4Mx32 KMM53240 KMM5324000BK cycles/64ms KMM5324000BKG
Not Available

Abstract: No abstract text available
Text: DRAM MODULE KM M5324000CV/CVG Fast Page Mode 4Mx32 DRAM SIMM Using 4Mx1 DRAM , 5V / 16 Mega , board for each DRAM . The KMM5324000CV is a Single In-line Memory Module with edge connections and is , without notice. 109 ELECTRONICS DRAM MODULE FUNCTIONAL BLOCK DIAGRAM 16 Mega Byte DQ16 , Capacitor for each DRAM Tq a| DRAMs 110 ELECTRONICS DRAM MODULE ABSOLUTE MAXIMUM RATINGS , 240 130 80 24 Unit pF pF pF pF pF - 111 ELECTRONICS DRAM MODULE AC CHARACTERISTICS (0


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PDF M5324000CV/CVG 4Mx32 KMM5324000CV 20-pin 72-pin
Not Available

Abstract: No abstract text available
Text: DRAM MODULE KM M5324000AV/AVG Fast Page Mode 4Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM , m ounted on the printed circuit board for each DRAM . The KM M5324000AV is a Single In-line M em ory , ELECTRONICS DRAM MODULE FU N C TIO N A L B LO CK DIAG RAM 16 Mega Byte CÄ5Ö RÄSÖ I CÄ 5 RÄ5 , - o for each DRAM 1- f 2^ CaPaci,or - To all DRAMS 210 ELECTRONICS DRAM , CIN4 CDQ1 42 36 17 211 ELECTRONICS DRAM MODULE AC CHARACTERISTICS (0°C


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PDF M5324000AV/AVG 4Mx32 KMM5324000AV 5324000AV 24-pin 72-pin M5324000AV
Not Available

Abstract: No abstract text available
Text: KMM5324004BK/BKG KMM5324104BK/BKG DRAM MODULE KMM5324004BK/BKG & KMM5324104BK/BKG Fast Page with EDO Mode 4Mx32 DRAM SIMM , 4K & 2K Refresh GENERAL DESCRIPTION FEATURES The Samsung , substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circu it board for each DRAM , KMM5324104BK/BKG DRAM MODULE FUNCTIONAL BLOCK DIAGRAM IXJU CASO HÂSÔ uo CÄS RÀS ÖE X , – 71b414S 002257Û 113 ■KM M5324004B K/B KG KMM5324104BK/BKG DRAM MODULE ABSOLUTE MAXIMUM


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PDF KMM5324004BK/BKG KMM5324104BK/BKG KMM5324104BK/BKG 4Mx32 KMM53240 24-pin KMM5324004BK cycles/64ms
2000 - 324006-S52T08JB

Abstract: 4mx32 4Mx32 dram simm 72 simm function
Text: 4M x 32 Bit 5V FPM SIMM Fast Page Mode (FPM) DRAM SIMM 324006-S52T08JB 72 Pin 4Mx32 FPM SIMM , * Active Low General Description The module is a 4Mx32 bit, 8 chip, 5V, 72 Pin SIMM module consisting , connector 4Mx32 5V FPM SIMM DS311-39 ­ 9/19/00 1 PNY Technologies Reserves the right to change , Block Diagram X32 DRAM SIMM , 1 BANK with X4 DRAMs WE RAS 0 CAS 0 DQ(0:3) U1 DQ(4:7) U2 , IC VCC U1 - U8 VSS U1 - U8 presence detect resistors: J1 - J5 4Mx32 5V FPM SIMM


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PDF 324006-S52T08JB 4Mx32 DS311-39 4Mx32 dram simm 72 simm function
1995 - DB25 Right Angle PCB Mount

Abstract: DB15 MALE TO DB9 FEMALE DB15 connector female elma E33 ED56 CX117 DB15 male connector orion crt monitor circuit diagram DB15 pcb connector female DB14 connector male
Text: ) A-B On Off 64 MBytes ( 4Mx32 ) A-B Off Off Table 3.4. DRAM SIMM Jumper and Switch , SIMM modules are installed. 1: Set to 1 manually when 1Mx32 or 4Mx32 DRAM SIMM modules are installed , . 3-2 3.3 Jumpers for Termination Resistors . 3-2 3.4 DRAM SIMM , 512Kx32 PROM SIMMs. Main memory consists of 4, 16, or 64 MBytes, using 256Kx32, 1Mx32, or 4Mx32 DRAM , options. The board can be populated with up to 4 SIMMs: 256Kx32, 1Mx32, or 4Mx32 DRAM SIMMs. Thus, the


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PDF IDT79S464 R4600 R4x00 DB25 Right Angle PCB Mount DB15 MALE TO DB9 FEMALE DB15 connector female elma E33 ED56 CX117 DB15 male connector orion crt monitor circuit diagram DB15 pcb connector female DB14 connector male
HYM53241

Abstract: No abstract text available
Text: ( -0 0 Y U I I P I I I ) HYM532410A M-Series 4Mx32 -bit CMOS DRAM MODULE DESCRIPTION , PDEOD Fast Page PD REF. Standard 98 ASYNC DRAM MODULE DATA BOOK 4Mx32 -b¡t CMOS DRAM MODULE , . 5.5 Vcc+1.0 0.8 UNIT V V V 98 ASYNC DRAM MODULE DATA BOOK g m u M U ijjA a d m * 4Mx32 , MODULE DATA BOOK H Y M 532410 A M -S eries 4Mx32 -bit CMOS DRAM MODULE AC CHARACTERISTICS , - 4Mx32 -blt CMOS DRAM MODULE PACKAGE DIMENSION 72pin Single In-line Memory Module (M;Tin-Lead


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PDF HYM532410A 4Mx32-bit 32-bit HY5117400A HYM53241OAAM/ASLM/ATM/ASLTM HYM532410AMG/ASLMG/ATMG/ASLTMG 4Mx32-blt 72pin HYM53241OA/AL HYM53241
Not Available

Abstract: No abstract text available
Text: ( H Y U N D A I> GENERAL DESCRIPTION H Y M 5 3 2 4 1 4 B M - S e r ie s 4MX32 bit EDO DRAM MODULE based on 4Mx4 DRAM , 5V, 2K-Refresh · The HYM532414B M-Series is a 4Mx32 -bit Extended Data , Detect Power (+5V) Ground ' 98 ASYNC DRAM MODULE DATA BOOK H YM 532414B M -Series 4Mx32 bit EDO , 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM , 5V, 2K-Refresh ABSOLUTE MAXIMUM RATINGS SYMBOL TA TSTG , BOOK 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM , 5V, 2K-Refresh AC CHARACTERISTICS (Ta= 0


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PDF 4MX32 HYM532414B 4Mx32-bit HY5117404B HYM532414BM HYM532414BMG 72-Pin 256ms
1997 - 3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 16Mbit FRAM HM62832 hm62256 Dram 168 pin EDO 8Mx8 flash 32 Pin PLCC 16mbit HN27C1024
Text: 32 HB56A1632 5V SIMM 72 16M (x1) based Memory Shortform, x 36 Fast Page Mode DRAM , Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS Application Frame Memory Specific Memory SGRAM Video RAM DRAM Modules Memory Shortform, EDO DRAM Modules


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PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 16Mbit FRAM HM62832 hm62256 Dram 168 pin EDO 8Mx8 flash 32 Pin PLCC 16mbit HN27C1024
Not Available

Abstract: No abstract text available
Text: ( -H Y U N D A I) DESCRIPTION H Y M 5 3 2 4 1 4 A M -S e r ie s 4Mx32 -blt CMOS DRAM MODULE with EXTENDED DATA OUT The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of , NC NC -70 Vss NC Vss NC -80 Vss NC NC Vss î® ASYNC DRAM MODULE DATA BOOK 4Mx32 -blt CMOS DRAM , /ASLMG/ASLTMG) US ASYNC DRAM MODUL t DA TA BOOK 4Mx32 -bit CMOS OfíAM MODULE with EXTENDED DATA OUT , M-Series 4Mx32 -bit CMOS DRAM MODULE with EXTENDED DATA OUT NOTE : 1. An initial pause of 2 0 0 us is


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PDF 4Mx32-blt HYM532414A 32-bit HY5117404A HYM532414AM/ HYM532414AMG/ASLMG/ATMG/ASLTMG 32414A 4Mx32-bit HYM532414AM HYM532414ASLM
Not Available

Abstract: No abstract text available
Text: ( - « T U H D A I ) · HYM532414C M-Series 4MX32 bit EOO DRAM MODULE based on 4Mx4 DRAM , 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM , 5V, 2K-Refresh ABSOLUTE MAXIMUM RATINGS SYMBOL TA TSTG , D U LE DATA B O O K H YM 532414C ÎVÎ-Series 4Mx32 btt EDO DRAM MODULE based on 4Mx4 DRAM , 5V , 13 13 - 5 5 5 5 5 5 04 '98 ASYNC DR AM MODULE DA TA BOOK 4Mx32 bit EDO DRAM , CMOS DRAM m odule consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed


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PDF HYM532414C 4MX32 x32-bit HY5117404C 532414CM HYM532414CMG 72-Pin 256ms
1997 - plc siemens

Abstract: ding dong siemens modules GR 70 4x4Mx16 componentes eletronicos 333
Text: 8Mx32 Outline V DRAM Typ Ref. mm / mil Capa. Siemens partno. pack SIMM , future architectures of memory modules. Conventional SIMM -, and DIMMModules are being brought into , traditional SMT-technique has less than 50% solder joints. The critical connections to the DRAM chips are , identical test flow procedures and test patterns as The first Siemens 4Mx32 COB-Module with 8 4Mx4 EDO DRAMs for our conventional DRAM components, on the basis of all our knowledge on the failure modes


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PDF de/Semiconductors/products/35/352 B191-H7152-G1-X-7600 plc siemens ding dong siemens modules GR 70 4x4Mx16 componentes eletronicos 333
DM2202

Abstract: No abstract text available
Text: Cache Memory for 10ns Random Reads Within a Page ■Fast 4Mbit DRAM Array for 25ns Access to Any New , Products Enhanced Memory Systems has reduced the production feature size of the enhanced DRAM products , -10 1Mx36 EDRAM DM2M32SJ-10 2Mx32 EDRAM DM2M36SJ-10 2M x36EDRAM DM4M36SJ-10 4Mx32 EDRAM , unattainable due to the slow performance of standard DRAM or cache plus DRAM systems or due to the high cost , DM2M36SJ6-10 2Mx36 Multibank EDO EDRAM DM4M36SJ6-10 4Mx32 Multibank EDO EDRAM specifications for


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PDF 100MHz DM2202
1997 - HYM532410CM

Abstract: HY5117400C HYM532410C HYM532410CMG
Text: HYM532410C M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM , 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410C M-Series is a 4Mx32 -bit Fast Page mode CMOS DRAM module consisting of eight , capacitors are mounted for each DRAM . The HYM532410CM is Tin plated and HYM532410CMG is Gold plated socket , . FEATURES · 72-Pin SIMM · Single power supply of 5.0V ± 10% · Fast Page Mode Operation · Low power , , 2K, 5V, SOJ SIMM SIMM Tin Gold This document is a general product description and is


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PDF HYM532410C 4Mx32 4Mx32-bit HY5117400C HYM532410CM HYM532410CMG 72-Pin
1997 - HY5117404C

Abstract: HYM532414C HYM532414CM HYM532414CMG DEC-97
Text: HYM532414C M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM , 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4Mx32 -bit Extended Data Out mode CMOS DRAM module consisting of , decoupling capacitors are mounted for each DRAM . The HYM532414CM is Tin plated and HYM532414CMG is Gold , memory. FEATURES · 72-Pin SIMM · Single power supply of 5.0V ± 10% · Extended Data Out , /70 EDO, 2K, 5V, SOJ EDO, 2K, 5V, SOJ SIMM SIMM Tin Gold This document is a general


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PDF HYM532414C 4Mx32 4Mx32-bit HY5117404C HYM532414CM HYM532414CMG 72-Pin DEC-97
1997 - HYM532414BM

Abstract: HY5117404B
Text: HYM532414B M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM , 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414B M-Series is a 4Mx32 -bit Extended Data Out mode CMOS DRAM module consisting of , decoupling capacitors are mounted for each DRAM . The HYM532414BM is Tin plated and HYM532414BMG is Gold , memory. FEATURES · 72-Pin SIMM · Single power supply of 5.0V ± 10% · Extended Data Out , /70 EDO, 2K, 5V, SOJ EDO, 2K, 5V, SOJ SIMM SIMM Tin Gold This document is a general


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PDF HYM532414B 4Mx32 4Mx32-bit HY5117404B HYM532414BM HYM532414BMG 72-Pin
1997 - HYM532410BM

Abstract: HY5117400B HYM532410B HYM532410BMG HYM532410
Text: HYM532410B M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM , 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410B M-Series is a 4Mx32 -bit Fast Page mode CMOS DRAM module consisting of eight , capacitors are mounted for each DRAM . The HYM532410BM is Tin plated and HYM532410BMG is Gold plated socket , . FEATURES · 72-Pin SIMM · Single power supply of 5.0V ± 10% · Fast Page Mode Operation · Low power , , 2K, 5V, SOJ SIMM SIMM Tin Gold This document is a general product description and is


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PDF HYM532410B 4Mx32 4Mx32-bit HY5117400B HYM532410BM HYM532410BMG 72-Pin HYM532410
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