The Datasheet Archive

Search Stock (35)

  You can filter table by choosing multiple options from dropdownShowing 35 results of 35
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
CMC-025/684MX1206T Tecate Group Bristol Electronics - -
CSA-90-14MX12MX5-G-4R7-K Compex Corporation Bristol Electronics - -
LM2574MX-12 Rochester Electronics - -
LM2574MX-12/NOPB Texas Instruments Avnet 0 $1.29 $1.09
LM2574MX-12/NOPB Texas Instruments Chip1Stop 2,448 $2.39 $1.50
LM2574MX-12/NOPB National Semiconductor Corporation Rochester Electronics 5,200 $1.67 $1.35
LM2594MX-12 Texas Instruments Avnet - -
LM2594MX-12/NOPB Texas Instruments Rochester Electronics 2,264 $2.17 $1.77
LM2594MX-12/NOPB Texas Instruments Avnet 0 $1.69 $1.49
LM2594MX-12/NOPB National Semiconductor Corporation Rochester Electronics 12,506 $2.17 $1.77
LM2594MX-12/NOPB Texas Instruments Avnet 0 $2.18 $1.71
LM2674MX-12 Texas Instruments Avnet - -
LM2674MX-12 National Semiconductor Corporation Bristol Electronics - -
LM2674MX-12/NOPB Texas Instruments Chip1Stop 253 $2.92 $2.17
LM2674MX-12/NOPB Texas Instruments element14 Asia-Pacific 1,257 $4.13 $2.17
LM2674MX-12/NOPB National Semiconductor Corporation Rochester Electronics 175 $2.17 $1.77
LM2674MX-12/NOPB Texas Instruments Farnell element14 1,340 £2.42 £1.79
LM2674MX-12/NOPB Texas Instruments Avnet 0 $1.49 $1.49
LM2674MX-12/NOPB Texas Instruments Newark element14 1,257 $3.17 $1.68
LMB1024MX1 National Semiconductor Corporation ComS.I.T. - -
NCP154MX100180TAG ON Semiconductor Rochester Electronics 84,000 $0.33 $0.27
NCP154MX100180TAG ON Semiconductor Avnet 0 $0.21 $0.20
NCP154MX150280TAG ON Semiconductor Rochester Electronics 39,000 $0.33 $0.27
NCP154MX150280TAG ON Semiconductor Avnet 0 $0.21 $0.20
NCP154MX180270TAG ON Semiconductor Wuhan P&S 4,600 $0.43 $0.26
NCP154MX180270TAG ON Semiconductor Avnet 0 $0.21 $0.20
NCP154MX180280TAG ON Semiconductor Rochester Electronics 75,000 $0.33 $0.27
NCP154MX180280TAG ON Semiconductor Wuhan P&S 2,200 $0.40 $0.24
NCP154MX180280TAG ON Semiconductor Avnet 0 $0.21 $0.20
NCP154MX180290TAG ON Semiconductor Avnet 0 $0.21 $0.20
NCP154MX180290TAG ON Semiconductor Rochester Electronics 41,444 $0.33 $0.27
NCP154MX180300TAG ON Semiconductor Avnet 0 $0.21 $0.20
NCP154MX180300TAG ON Semiconductor Rochester Electronics 30,000 $0.33 $0.27
OV120K474MX122R KEKO-VARICON(RoHS) Bristol Electronics 2,000 $0.56 $0.16
W104MX-1 OLD Magnecraft Master Electronics - -

No Results Found

4MX1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - 44-SOJ

Abstract:
Text: 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M Format 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8


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PDF PD434001ALE-12 PD434001ALE-15 PD434001ALE-17 PD434001ALE-20 PD434001ALLE-15 PD434001ALLE-17 PD434001ALLE-20 PD434004ALE-12 PD434004ALE-15 PD434004ALE-17 44-SOJ 44TSOP 4Mx1
2003 - Not Available

Abstract:
Text: €¢ 4,194,304-word by 9-bit organization. module with 9pcs of 4Mx1 DRAMs assembled on • Fast , ~A10 /RAS 4Mx1 DRAM /CAS /WE /DQ2 /DQ1 A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO DI,DO /CAS0 /WE A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO A0~A10 /RAS 4Mx1 DRAM /CAS , DQ3 A6 A7 /DQ5 /DQ6 /DQ7 A0~A10 /RAS 4Mx1 DRAM /CAS /WE PQ A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO A0~A10 /RAS 4Mx1 DRAM /CAS


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PDF TS4M9960 TS4M9960 304-word 110ns
1996 - 4Mx1

Abstract:
Text: -50/-60/-70 3.3V 4Mx1 DRAM The HYB 314100BJ/BJL is the new generation dynamic RAM organized as 4 194 , /-70 3.3 V 4Mx1 DRAM P-SOJ-26/20-5 DI WE RAS N.C. A10 1 2 3 4 5 26 25 24 23 22 , /BJL-50/-60/-70 3.3V 4Mx1 DRAM WE & Data in Buffer DI No. 2 Clock Generator Data , 4 VCC VSS HYB314100BJ/BJL-50/-60/-70 3.3 V 4Mx1 DRAM Absolute Maximum Ratings Operating , /-70 3.3V 4Mx1 DRAM DC Characteristics (cont'd) TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V


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PDF 314100BJ/BJL HYB314100BJ/BJL-50/-60/-70 P-SOJ-26/20 GPJ05626 4Mx1 P-SOJ-26 TASC 20-5
KM44C1000BJ

Abstract:
Text: Mx1 4 Mx1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 1Mx4 1Mx4


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PDF KM41C4000BTR KM41C4000BLP KM41C4000BU KM41C4000BLZ KM41C4000BLV KM41C4000BLVR KM41C4000BLT KM41C4000BLTR KM41C4000BSLP KM41C4000BSU KM44C1000BJ 4Mx1 4Mx1 nibble
HB56D836SBT-AC

Abstract:
Text: pcs. 4Mx4 (HM5117400AS) 4 pcs. 4Mx1 (HM514100B/CS) 8 pcs. 4Mx4 (HM5117400AS) 4 pcs. 4Mx1 (HM514100CS) 16 pcs. 4Mx4 (HM5117400AS) 8 pcs. 4Mx1 (HM514100BS/CS) 16 pcs. 4Mx4 (HM5117400AS) 8 pcs. 4Mx1 , (H M 5117800B TT) 16 pcs. 4M x4 (H M 5116400A S ) 8 pcs. 4Mx1 (H M 514100B S / H M 514100C S ) 16 pcs. 4M x4 (H M 5117400A S ) 8 pcs. 4Mx1 (H M 514100B S / H M 514100C S ) 18 pcs. 4M x4 (H M 51 1 6 40 0 A


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PDF 72-pin A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL HB56A132BW-B/BL HB56A132SBW-B/BL HB56A132BW-C/CL HB56A132SBW-C/CL HB56A232BT-B/BL HB56D836SBT-AC power bank 5v 514400C 4Mx1 5117800B B56A HM5116400ATS HM514400BS BLS m514400c 473e
Not Available

Abstract:
Text: •HYUNDAI HY514100A 4Mx1 , Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized , Column Decoder Sense Amp I/O Gate Memory Array 4,194,304 x 1 Substrate Bias Generator Vcc Vss 4Mx1 ,FP , ) Vss Ground 4Mx1 ,FP DRAM Rev.10 / Jan .98 3 -HYUNDAI HY514100A ABSOLUTE MAXIMUM RATINGS Symbol , 10 |LiA Vol Output Low Voltage Iol = 4.2mA - 0.4 V Voh Output High Voltage loh = -5.0mA 2.4 - V 4Mx1 , normal functional opération. 5. Icc5(max.), Icc7 are applied to L-part only. 4Mx1 ,FP DRAM Rev.10 / Jan


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PDF HY514100A 128ms
2003 - Not Available

Abstract:
Text: PcRam TS4M3660 Description Features The TS4M3660 is a 4M by 36-bit dynamic RAM • 4,194,304-word by 36-bit organization. module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 â , A0~A10 DQ8 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ26 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ17 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ9~DQ16 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ18~DQ25 4Mx4 , /CAS /WE /CAS1 /RAS2 /CAS2 A0~A10 DQ35 4Mx1 /RAS DRAM /CAS /WE /CAS3 Pinouts


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PDF TS4M3660 TS4M3660 36-bit 304-word
1996 - 4MX1

Abstract:
Text: document, call 1-800-866-8608 DATA SHEET EDITION 1.0 4M x 1 673k ( 4Mx1 Fast Page Mode, 5V) MB814100A Not recommended for new design. DATA SHEET EDITION 1.0 258k ( 4Mx1 Fast Page Mode, 5V) MB814100D Not recommended for new design. DATA SHEET EDITION 3.0 279k( 4Mx1 Fast Page Mode, 5V


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PDF MB814400A MB814400D MB814400C MB814405C MB814405D MB81V4405C 81V4405C MB814100A MB814100D MB814100C 4MX1 MB814260 407K MB814100D MB814400A MB814405C MB814405D
DRAMs

Abstract:
Text: refresh is used, the number of rows and column match the 4Mx1. allowing the usage of 4Mx1 DRAMs for parity , , 4Mx1 DRAMs can't be used for partly because the number of rows and columns doss not maldi. The shaded


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PDF INP01GKU 5116400BJ/BT 5117400BJ/BT DRAMs 4Mx1
HY514100A

Abstract:
Text: HY514100A 4Mx1 , Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194 , 4Mx1 ,FP DRAM Rev.10 / Jan.98 2 VCC VSS HY514100A PIN CONFIGURATION (Marking Side) D , Data Input Q Data Output Vcc Power (5V) Vss Ground 4Mx1 ,FP DRAM Rev.10 / Jan , 4.2mA - 0.4 V VOH Output High Voltage IOH = -5.0mA 2.4 - V 4Mx1 ,FP DRAM , L-part only. 4Mx1 ,FP DRAM Rev.10 / Jan.98 5 HY514100A AC CHARACTERISTICS (TA = 0 °C to 70 °C


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PDF HY514100A 128ms HY514100A 4Mx1 HY514100AJ HY514100ALT
2002 - Not Available

Abstract:
Text: a 4M by 36-bit dynamic RAM Features module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 â , DQ0~DQ7 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ8 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ9~DQ16 , /RAS0 /CAS0 /WE A0~A10 DQ26 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ27~DQ34 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ17 4Mx1 /RAS DRAM /CAS /WE /CAS1 /RAS2 /CAS2 /CAS3 PD1~PD4 PD Configuration Transcend Information Inc. A0~A10 DQ35 4Mx1 /RAS DRAM /CAS /WE 16MB


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PDF TS4M3660G TS4M3660G 36-bit 304-word TS4M3660G
1998 - A0-A10d

Abstract:
Text: HY514100A 4Mx1 , Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194 , Generator Substrate Bias Generator VCC VSS 4Mx1 ,FP DRAM Rev. 10/Jan.98 2 HY514100A PIN , Enable 4Mx1 ,FP DRAM Rev. 10/Jan.98 ABSOLUTE MAXIMUM RATINGS Parameter A Unit 0 to 70 C C V V , 4.2mA IOH = -5.0mA Min -10 -10 2.4 Max 10 10 0.4 Unit µA µA V V VOL VOH 4Mx1 ,FP DRAM Rev. 10/Jan , normal functional operation. 5. Icc5(max.), Icc7 are applied to L-part only. 4Mx1 ,FP DRAM Rev. 10/Jan


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PDF HY514100A 128ms 10/Jan A0-A10d
2006 - Not Available

Abstract:
Text: -bit dynamic RAM module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 DRAM assembled on the printed circuit board , 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ9~DQ16 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ17 A0~A10 DQ18~DQ25 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ0~DQ35 /RAS0 /CAS0 /WE A0~A10 DQ26 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ27~DQ34 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ35 4Mx1 /RAS DRAM /CAS /WE /RAS /CAS /WE 4Mx1 DRAM /CAS1 /RAS2 /CAS2 /CAS3 PD1~PD4 PD


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PDF TS4M3670G TS4M3670G 36-bit 304-word
Not Available

Abstract:
Text: •HYUNDAI HY514100A 4Mx1 , Fast Page mode DESCRIPTION T h is fa m ily is a 4M b it d y n a , FUNCTIONAL BLOCK DIAGRAM Q WE CAS 4Mx1 ,FP DRAM Rev.10 / Jan.98 2 -HYUNDAI HY514100A , Pin Name = NC 1 U > to WE Ground 4Mx1 ,FP DRAM Rev.10 / Jan.98 3 -HYUNDAI , 4Mx1 ,FP DRAM Rev.10 / Jan.98 4 -HYUNDAI HY514100A DC CHARACTERISTICS (T a = 0°C to 70 , L-part only. 4Mx1 ,FP DRAM Rev.10 / Jan.98 5 -HYUNDAI HY514100A AC CHARACTERISTICS (T a


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PDF HY514100A
2003 - Not Available

Abstract:
Text: PcRam TS4M3670G Description Features The TS4M3670G is a 4M by 36-bit dynamic RAM • 4,194,304-word by 36-bit organization. module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 â , /RAS DRAM /CAS /WE A0~A10 DQ8 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ9~DQ16 4Mx4 /RAS DRAM , /CAS0 /WE A0~A10 DQ26 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ27~DQ34 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ35 4Mx1 /RAS DRAM /CAS /WE /RAS /CAS /WE 4Mx1 DRAM /CAS1 /RAS2


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PDF TS4M3670G TS4M3670G 36-bit 304-word
Not Available

Abstract:
Text: moi Electronic Detigns me. _ (EDI414096C Features High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide technology and a single transistor dynamic storage cell, provide high circuit density with high performance , -883, para graph 1.2.1, is available. OiF©M^Tfl©INI 4Mx1 bit CMOS Dynamic^ / S Random Access M em /y


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PDF EDI414096C EDI414096C A0A10
Not Available

Abstract:
Text: MDi Electronic Dôiign» Inc. High Performance Four Megabit Monolithic DRAM Features EDI414097C 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414097C is a high performance, low power CMOS Dynamic RAM organized as 4Megabit x1. During Read and Write cycles each bit is addressed through 22 address bits which are entered 11 at a time (A0 - A10). RAS\ is used to latch the first 11 bits and CAS\, the , product compliant to Mil-STD-883, paragraph 1.2.1, is available. [P^iüiQiÆ W 4Mx1 bit CMOS Dynamic


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PDF EDI414097C EDI414097C EDI414097C70LZB EDI414097C80LZB ED1414097C100LZB
4Mx1

Abstract:
Text: EDI414096C Electronic Designs Inc. ■High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS; Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide technology and a single transistor dynamic storage cell, provide high circuit density with high performance. The use of dynamic , , is available. Pin Configurations and Block Diagram ADVANCE fliF©MATI]©l Features 4Mx1 bit CMOS


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PDF EDI414096C EDI414096C A109- 4Mx1 CA211 A109 amplifier a719
Not Available

Abstract:
Text: ELECTPOWC MSGNS NC. | ^EDI INSIDE SECTION 3 . Density 1 Megabit 1 Megabit 1 Megabit 1 Megabit 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 16 Megabits 16 Megabits 18 Megabits 16 Megabits Organization IM xl IM xl 1Mx1 1Mx1 1Mx4 1Mx4 1Mx4 4Mx1 4Mx1 4Mx1 4Mx4 4Mx4 4Mx4 4Mx4 Part No. BH411024C-ZB EDI411024C-NB EDI411024C-FB EDI411024C-QB EDI441024C-LZB EDI441024C-BB EDI441024C-FB EDI414097C-LZB E0W14Q97C-BB EDI414087C-FB EDI444086C-BB EDI444096C-FB EDI444096CA-BB


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PDF BH411024C-ZB EDI411024C-NB EDI411024C-FB EDI411024C-QB EDI441024C-LZB EDI441024C-BB EDI441024C-FB EDI414097C-LZB E0W14Q97C-BB EDI414087C-FB
1213C

Abstract:
Text: É3EDI Electronic Designs Inc. EDI414096C High Performance Four Megabit Monolithic DRAM Features 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power C M O S Dynamic RA M organized a s 4Megabits x1. The use of four-layer poly process, combined with silicide technology and a single transistor dynamic storage cell, provide high circuit density with high performance , -883, para graph 1.2.1, is available. DMFOMM' IO i 4Mx1 bit C M O S Dynamic Random Access Memory ·


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PDF EDI414096C EDI414096C A0A10 1213C 4Mx1
1mx1 DRAM DIP

Abstract:
Text: 4MX1 DRAM Figure 3 +5V Decouple close to DS1262 O .ljiF Ceramic BATTERY 6 -9 Volts DS1262 , tached. For example, a 1Mx1 DRAM requires 512 cycles in 8 ms while a 4Mx1 DRAM requires 1024 cycles in a 16 ms period. Both devices are satisfied using a 4 msec refresh period since a 4Mx1 DRAM is satisfied , SELECT SCHEME FOR TWO 4MX1 DRAMS F igu re 4 1-SELECT DRAM #0 DRAM I- s _ -SELECT 1 0-SELEC T DRAM #1 A11 DRAM #0 4Mx1 3-W IR E HOSTINTERFACE DRAM #1 4Mx1 o>- D - \ 0 - RST CLK D/Q CAS CAS


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PDF 16Mx1 28-pin DS1262S) DS1262 1mx1 DRAM DIP 1MX1 1mx1 DRAM
2003 - Not Available

Abstract:
Text: PcRam TS4M9360 Description Features The TS4M9360 is a 4M by 9-bit dynamic RAM • 4,194,304-word by 9-bit organization. module with 2pcs of 4Mx4 DRAMs and1pc of 4Mx1 • Fast Page Mode operation. DRAMs assembled on the printed circuit board. • Single +5.0V ± 10% power supply. The TS4M9360 is optimized for application to • 2,048 cycles refresh. systems , DI/DO /RAS /CAS /WE 4Mx1 DRAM /CAS1 Pinouts Pin No 01 02 03 04 05 06 07 08 09


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PDF TS4M9360 TS4M9360 304-word
AIL 4M

Abstract:
Text: » 3m mil SOJ 26:20 JU>mll EÜJ Jlj. Ij -ilg.1 - a SIEMENS 4Mx1 / 1M x 4 DRAM PROCESS RELATED DATA , ) Thickness B0Q nm fig 2 — 4 SIEMENS 4Mx1 /1Mx4 DRAM DESIGN RELATED DATA ORGANIZATION 4M*1/1Mx4 , Mia 3,0 Mia -fig.3 - 5 SIEMENS 4Mx1 /1Mx4 DRAM ASSEMBLY RELATED DATA Surface mount package


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PDF -SO/-60/-70 514400BJ HYB5141Q0BJ HYB514400BJ SQJ2S/20 SOJ26/20 AIL 4M siemens im 304 514100BJ HVB marking Polystyrol capacitors siemens 575 SIEMENS marking
CA211

Abstract:
Text: ^EDI Electronic Design« Inc. ■EDI414096C High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide technology and a single transistor dynamic storage cell, provide high circuit density with high performance. The use of , , is available. Pin Configurations and Block Diagram Hi Features 4Mx1 bit CMOS Dynamic Random


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PDF EDI414096C EDI414096C -A109- A0-A10 CA211 4Mx1
Not Available

Abstract:
Text: ( ··HYUNDAI ) DESCRIPTION - · HY514100A 4Mx1 ,Fast Page mode This fam ily is a 4M bit dynamic RAM organized 4,194,304 x 1-bit configuration with Fast Page mode CMOS DRAMs. Fast page mode , 4Mx1 ,Fast Page mode PIN CONFIGURATION (Marking Side) WE C RAS c NC C 26 3 Vss 25 3D 24 3 CAS , 2.4 V V - 1 ' 98 DR AM DA TA BOOK 4Mx1 ,Fast Page mode DC CHARACTERISTICS (Ta = 0°C to , 14 - 15 15 ; tflw i - - ns 62 ' 98 DRAM DATA BOOK 4Mx1 ,Fast Page mode


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PDF HY514100A 128ms
Supplyframe Tracking Pixel