The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LM2674MX-12/NOPB Texas Instruments SIMPLE SWITCHER® 40V, 500mA Low Component Count Step-Down Regulator 8-SOIC -40 to 125
LM2574MX-12 Texas Instruments 1.8A SWITCHING REGULATOR, 63kHz SWITCHING FREQ-MAX, PDSO14, 0.300 INCH, PLASTIC, SOP-14
LM2594MX-12/NOPB Texas Instruments SIMPLE SWITCHER® 40V, 500mA Low Component Count Step-Down Regulator 8-SOIC -40 to 125
LM2674MX-12 Texas Instruments 1.25A SWITCHING REGULATOR, 275kHz SWITCHING FREQ-MAX, PDSO8, PLASTIC, MS-012AA, SOIC-8
LM2574MX-12/NOPB Texas Instruments 8V to 40V, 500mA SIMPLE SWITCHER® buck converter with 4 external components 14-SOIC -40 to 125
LM2594MX-12 Texas Instruments 1.4A SWITCHING REGULATOR, 173kHz SWITCHING FREQ-MAX, PDSO8, 0.150 INCH, PLASTIC, SOP-8

4MX1 aram Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
514100aj-60

Abstract: HYB514100AJ-80 HYB514100A-80 514100AZ-60 4MX1 aram
Text: 514100A-60/-7Ó/-80 SIEMENS A KTIEN fiESELLSCH A F 47E D 4Mx1 ' Bit Block Diagram W R ITE , 4Mx1 -Blt T- Hb . 0 to 70 *0 .- 5 5 to 150 S C , . . AC Characteristics4 ) (cont'd) P aram eter Sym bol HYB 514 1 0 0 A -60 m in. m ax. Row address , Aktiengesellschaft 7 053SbOS DD5G407 1 S S I E G HYB 514100A-60/-70/-80 47E » 4Mx1 -Bit SIEMENS , Test Mode t M7E D 4Mx1 «Bit- , V V b -Ä 3 -/S - The HYB 514100A is organized 4 194 304


OCR Scan
PDF 14100A-60/-70/-80 fi23Sb05 P-ZIP-20 JEDEC-MO-072-AA) 514100aj-60 HYB514100AJ-80 HYB514100A-80 514100AZ-60 4MX1 aram
Not Available

Abstract: No abstract text available
Text: module utilizes nine, Fujitsu MB811 (6/7)400A-(60/70)PJ CMOS 4Mx4 and four 4Mx1 Fujitsu MB814100C-(60/70 , comprises two 4Mx4and one 4Mx1 DRAMs. Addresses AO - A10/A11: To all devices (A11is NC for 2KR). WE*: To , ) 60 70 Notes P aram eter M in Access time from column address •a a M ax M in


OCR Scan
PDF June1996 FSA4UN364 16MByte 16-megabyte 36bits, 72-pin, DM4M4N360 DM4M2N360 MB811
1998 - 44-SOJ

Abstract: 44TSOP 4Mx1
Text: 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M Format 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8


Original
PDF PD434001ALE-12 PD434001ALE-15 PD434001ALE-17 PD434001ALE-20 PD434001ALLE-15 PD434001ALLE-17 PD434001ALLE-20 PD434004ALE-12 PD434004ALE-15 PD434004ALE-17 44-SOJ 44TSOP 4Mx1
1996 - 4Mx1

Abstract: P-SOJ-26 TASC 20-5
Text: -50/-60/-70 3.3V 4Mx1 DRAM The HYB 314100BJ/BJL is the new generation dynamic RAM organized as 4 194 , /-70 3.3 V 4Mx1 DRAM P-SOJ-26/20-5 DI WE RAS N.C. A10 1 2 3 4 5 26 25 24 23 22 , /BJL-50/-60/-70 3.3V 4Mx1 DRAM WE & Data in Buffer DI No. 2 Clock Generator Data , 4 VCC VSS HYB314100BJ/BJL-50/-60/-70 3.3 V 4Mx1 DRAM Absolute Maximum Ratings Operating , /-70 3.3V 4Mx1 DRAM DC Characteristics (cont'd) TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V


Original
PDF 314100BJ/BJL HYB314100BJ/BJL-50/-60/-70 P-SOJ-26/20 GPJ05626 4Mx1 P-SOJ-26 TASC 20-5
2003 - Not Available

Abstract: No abstract text available
Text: €¢ 4,194,304-word by 9-bit organization. module with 9pcs of 4Mx1 DRAMs assembled on • Fast , ~A10 /RAS 4Mx1 DRAM /CAS /WE /DQ2 /DQ1 A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO DI,DO /CAS0 /WE A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO A0~A10 /RAS 4Mx1 DRAM /CAS , DQ3 A6 A7 /DQ5 /DQ6 /DQ7 A0~A10 /RAS 4Mx1 DRAM /CAS /WE PQ A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO A0~A10 /RAS 4Mx1 DRAM /CAS


Original
PDF TS4M9960 TS4M9960 304-word 110ns
DM2202

Abstract: No abstract text available
Text: now in production. This Part Number Organization DM2200J-10 4Mx1 EDRAM DM2202J , characteristics, I/O capacitance, and operating current DM2240J-10 4Mx1 Multibank EDO EDRAM DM2242J , from (6) Access P aram eter Applies When /CAL Has Not Been Asserted P rior to tj^ Q (7) For


OCR Scan
PDF 100MHz DM2202
Not Available

Abstract: No abstract text available
Text: •HYUNDAI HY514100A 4Mx1 , Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized , Column Decoder Sense Amp I/O Gate Memory Array 4,194,304 x 1 Substrate Bias Generator Vcc Vss 4Mx1 ,FP , ) Vss Ground 4Mx1 ,FP DRAM Rev.10 / Jan .98 3 -HYUNDAI HY514100A ABSOLUTE MAXIMUM RATINGS Symbol , 10 |LiA Vol Output Low Voltage Iol = 4.2mA - 0.4 V Voh Output High Voltage loh = -5.0mA 2.4 - V 4Mx1 , normal functional opération. 5. Icc5(max.), Icc7 are applied to L-part only. 4Mx1 ,FP DRAM Rev.10 / Jan


OCR Scan
PDF HY514100A 128ms
2003 - Not Available

Abstract: No abstract text available
Text: PcRam TS4M3660 Description Features The TS4M3660 is a 4M by 36-bit dynamic RAM • 4,194,304-word by 36-bit organization. module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 â , A0~A10 DQ8 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ26 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ17 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ9~DQ16 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ18~DQ25 4Mx4 , /CAS /WE /CAS1 /RAS2 /CAS2 A0~A10 DQ35 4Mx1 /RAS DRAM /CAS /WE /CAS3 Pinouts


Original
PDF TS4M3660 TS4M3660 36-bit 304-word
DRAMs

Abstract: 4Mx1
Text: refresh is used, the number of rows and column match the 4Mx1 . allowing the usage of 4Mx1 DRAMs for parity , , 4Mx1 DRAMs can't be used for partly because the number of rows and columns doss not maldi. The shaded


OCR Scan
PDF INP01GKU 5116400BJ/BT 5117400BJ/BT DRAMs 4Mx1
HY514100A

Abstract: HY514100ALT HY514100AJ 4Mx1
Text: HY514100A 4Mx1 , Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194 , 4Mx1 ,FP DRAM Rev.10 / Jan.98 2 VCC VSS HY514100A PIN CONFIGURATION (Marking Side) D , Data Input Q Data Output Vcc Power (5V) Vss Ground 4Mx1 ,FP DRAM Rev.10 / Jan , 4.2mA - 0.4 V VOH Output High Voltage IOH = -5.0mA 2.4 - V 4Mx1 ,FP DRAM , L-part only. 4Mx1 ,FP DRAM Rev.10 / Jan.98 5 HY514100A AC CHARACTERISTICS (TA = 0 °C to 70 °C


Original
PDF HY514100A 128ms HY514100A HY514100ALT HY514100AJ 4Mx1
pj 996

Abstract: Fujitsu IR c code
Text: 0 to +70 °C) Sym bol VCC VSS V|H V|L P aram eter Supply Voltage Ground Input High voltage Input Low , active low signal. Each 4Mx9 block comprises two 4M x4 and one 4Mx1 Addresses AO ~ A 10/A 11 : To all , 64(2 /4 )-( 6 0/7 0)J (G /S )- S 60 P aram eter Sym bol Test C o n d itio n R efresh M in. 2K


OCR Scan
PDF FSA4UN364 16MByte 16-megabyte 36bits, 72-pin, DM4M4N360 DM4M2N360 MB814100C- pj 996 Fujitsu IR c code
2002 - Not Available

Abstract: No abstract text available
Text: a 4M by 36-bit dynamic RAM Features module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 â , DQ0~DQ7 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ8 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ9~DQ16 , /RAS0 /CAS0 /WE A0~A10 DQ26 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ27~DQ34 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ17 4Mx1 /RAS DRAM /CAS /WE /CAS1 /RAS2 /CAS2 /CAS3 PD1~PD4 PD Configuration Transcend Information Inc. A0~A10 DQ35 4Mx1 /RAS DRAM /CAS /WE 16MB


Original
PDF TS4M3660G TS4M3660G 36-bit 304-word TS4M3660G
1998 - A0-A10d

Abstract: No abstract text available
Text: HY514100A 4Mx1 , Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194 , Generator Substrate Bias Generator VCC VSS 4Mx1 ,FP DRAM Rev. 10/Jan.98 2 HY514100A PIN , Enable 4Mx1 ,FP DRAM Rev. 10/Jan.98 ABSOLUTE MAXIMUM RATINGS Parameter A Unit 0 to 70 C C V V , 4.2mA IOH = -5.0mA Min -10 -10 2.4 Max 10 10 0.4 Unit µA µA V V VOL VOH 4Mx1 ,FP DRAM Rev. 10/Jan , normal functional operation. 5. Icc5(max.), Icc7 are applied to L-part only. 4Mx1 ,FP DRAM Rev. 10/Jan


Original
PDF HY514100A 128ms 10/Jan A0-A10d
2006 - Not Available

Abstract: No abstract text available
Text: -bit dynamic RAM module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 DRAM assembled on the printed circuit board , 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ9~DQ16 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ17 A0~A10 DQ18~DQ25 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ0~DQ35 /RAS0 /CAS0 /WE A0~A10 DQ26 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ27~DQ34 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ35 4Mx1 /RAS DRAM /CAS /WE /RAS /CAS /WE 4Mx1 DRAM /CAS1 /RAS2 /CAS2 /CAS3 PD1~PD4 PD


Original
PDF TS4M3670G TS4M3670G 36-bit 304-word
Not Available

Abstract: No abstract text available
Text: •HYUNDAI HY514100A 4Mx1 , Fast Page mode DESCRIPTION T h is fa m ily is a 4M b it d y n a , FUNCTIONAL BLOCK DIAGRAM Q WE CAS 4Mx1 ,FP DRAM Rev.10 / Jan.98 2 -HYUNDAI HY514100A , Pin Name = NC 1 U > to WE Ground 4Mx1 ,FP DRAM Rev.10 / Jan.98 3 -HYUNDAI , 4Mx1 ,FP DRAM Rev.10 / Jan.98 4 -HYUNDAI HY514100A DC CHARACTERISTICS (T a = 0°C to 70 , L-part only. 4Mx1 ,FP DRAM Rev.10 / Jan.98 5 -HYUNDAI HY514100A AC CHARACTERISTICS (T a


OCR Scan
PDF HY514100A
2003 - Not Available

Abstract: No abstract text available
Text: PcRam TS4M3670G Description Features The TS4M3670G is a 4M by 36-bit dynamic RAM • 4,194,304-word by 36-bit organization. module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 â , /RAS DRAM /CAS /WE A0~A10 DQ8 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ9~DQ16 4Mx4 /RAS DRAM , /CAS0 /WE A0~A10 DQ26 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ27~DQ34 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ35 4Mx1 /RAS DRAM /CAS /WE /RAS /CAS /WE 4Mx1 DRAM /CAS1 /RAS2


Original
PDF TS4M3670G TS4M3670G 36-bit 304-word
Not Available

Abstract: No abstract text available
Text: MDi Electronic Dôiign» Inc. High Performance Four Megabit Monolithic DRAM Features EDI414097C 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414097C is a high performance, low power CMOS Dynamic RAM organized as 4Megabit x1. During Read and Write cycles each bit is addressed through 22 address bits which are entered 11 at a time (A0 - A10). RAS\ is used to latch the first 11 bits and CAS\, the , product compliant to Mil-STD-883, paragraph 1.2.1, is available. [P^iüiQiÆ W 4Mx1 bit CMOS Dynamic


OCR Scan
PDF EDI414097C EDI414097C EDI414097C70LZB EDI414097C80LZB ED1414097C100LZB
1mx1 DRAM DIP

Abstract: 1mx1 DRAM 1MX1
Text: 4MX1 DRAM Figure 3 +5V Decouple close to DS1262 O .ljiF Ceramic BATTERY 6 -9 Volts DS1262 , tached. For example, a 1Mx1 DRAM requires 512 cycles in 8 ms while a 4Mx1 DRAM requires 1024 cycles in a 16 ms period. Both devices are satisfied using a 4 msec refresh period since a 4Mx1 DRAM is satisfied , SELECT SCHEME FOR TWO 4MX1 DRAMS F igu re 4 1-SELECT DRAM #0 DRAM I- s _ -SELECT 1 0-SELEC T DRAM #1 A11 DRAM #0 4Mx1 3-W IR E HOSTINTERFACE DRAM #1 4Mx1 o>- D - \ 0 - RST CLK D/Q CAS CAS


OCR Scan
PDF 16Mx1 28-pin DS1262S) DS1262 1mx1 DRAM DIP 1mx1 DRAM 1MX1
siemens im 304

Abstract: AIL 4M 514100BJ HYB5141Q0BJ HYB514400BJ SIEMENS marking siemens 575 HVB marking Polystyrol capacitors
Text: » 3m mil SOJ 26:20 JU>mll EÜJ Jlj. Ij -ilg.1 - a SIEMENS 4Mx1 / 1M x 4 DRAM PROCESS RELATED DATA , ) Thickness B0Q nm fig 2 — 4 SIEMENS 4Mx1 /1Mx4 DRAM DESIGN RELATED DATA ORGANIZATION 4M*1/1Mx4 , Mia 3,0 Mia -fig.3 - 5 SIEMENS 4Mx1 /1Mx4 DRAM ASSEMBLY RELATED DATA Surface mount package


OCR Scan
PDF -SO/-60/-70 514400BJ HYB5141Q0BJ HYB514400BJ SQJ2S/20 SOJ26/20 siemens im 304 AIL 4M 514100BJ SIEMENS marking siemens 575 HVB marking Polystyrol capacitors
2003 - Not Available

Abstract: No abstract text available
Text: PcRam TS4M9360 Description Features The TS4M9360 is a 4M by 9-bit dynamic RAM • 4,194,304-word by 9-bit organization. module with 2pcs of 4Mx4 DRAMs and1pc of 4Mx1 • Fast Page Mode operation. DRAMs assembled on the printed circuit board. • Single +5.0V ± 10% power supply. The TS4M9360 is optimized for application to • 2,048 cycles refresh. systems , DI/DO /RAS /CAS /WE 4Mx1 DRAM /CAS1 Pinouts Pin No 01 02 03 04 05 06 07 08 09


Original
PDF TS4M9360 TS4M9360 304-word
Not Available

Abstract: No abstract text available
Text: ( ··HYUNDAI ) DESCRIPTION - · HY514100A 4Mx1 ,Fast Page mode This fam ily is a 4M bit dynamic RAM organized 4,194,304 x 1-bit configuration with Fast Page mode CMOS DRAMs. Fast page mode , 4Mx1 ,Fast Page mode PIN CONFIGURATION (Marking Side) WE C RAS c NC C 26 3 Vss 25 3D 24 3 CAS , 2.4 V V - 1 ' 98 DR AM DA TA BOOK 4Mx1 ,Fast Page mode DC CHARACTERISTICS (Ta = 0°C to , 14 - 15 15 ; tflw i - - ns 62 ' 98 DRAM DATA BOOK 4Mx1 ,Fast Page mode


OCR Scan
PDF HY514100A 128ms
R3051

Abstract: dram memory 256kx4 IDT79R3721 DRAM controller DRAMs Bus Exchanger
Text: accesses Supports Multiple Common DRAM Configurations — 1MB to 16 MB — 256kx4 through 4Mx1 DRAMs — 1 , . Options in the memory configuration include: use of 256kx4 through 4Mx1 DRAM organizations; single, banked


OCR Scan
PDF GQG7714 R3051 IDT79R3721 R3051â R3720 R3722 74FCT245 74FCT245-type dram memory 256kx4 DRAM controller DRAMs Bus Exchanger
PMB 3330

Abstract: block diagram of answering machine PMB 27251 DECT siemens PSB uart
Text: progress or alert tones. Messages and user data can be stored in ARAM /DRAM or flash memory which can be , ARAM /DRAM) are operational. The PSB 4860 supports interface pins to +5 V levels. Semiconductor Group , compression rate (3.3, 5.6 or 10.3 kbit/s) Variable playback speed Support for ARAM or Flash Memory Optional , four serial flash devices supported (Toshiba, Atmel) Support for x1 ARAM /DRAM New command for easier , serial control interface. Interrupt New status available. ARAM , DRAM: Column address strobes. Samsung


OCR Scan
PDF PSB4860 P-MQFP-80 PMB 3330 block diagram of answering machine PMB 27251 DECT siemens PSB uart
1997 - PMB 3330

Abstract: PMB 27251 4MX1 aram smd code book z1 1mx4 aram MA15 MA13 MA12 PSB 2147 F DRAM 256kx4
Text: 4Mx1 - 4 ARAM /DRAM 8 ARAM /DRAM 1Mx4 1Mx4 16 ARAM /DRAM 4Mx4 - 2k or , generation and call progress tone detection. Messages and user data can be stored in ARAM /DRAM or flash , where only the real time clock and the memory refresh (in case of ARAM /DRAM) are operational. The PSB , playback speed Support for ARAM or Flash Memory Optional voice prompt EPROM DTMF generation and , supported (Toshiba, Atmel) Support for x1 ARAM /DRAM New command for easier programming Auxiliary parallel


Original
PDF MA0-MA11 MA0-MA11 P-MQFP-80 PMB 3330 PMB 27251 4MX1 aram smd code book z1 1mx4 aram MA15 MA13 MA12 PSB 2147 F DRAM 256kx4
DS1262

Abstract: 1N5817 DS1262S
Text: DS1262 APPLICATION CIRCUIT WITH 4MX1 DRAM Figure 3 CLK o- RST o- D/Q o- V J_ 2 —T -""Ì2 , of the RAM attached. For example, a 1Mx1 DRAM requires 512 cycles in 8 ms while a 4Mx1 DRAM requires 1024 cycles in a 16 ms period. Both devices are satisfied using a 4 msec refresh period since a 4Mx1 , codes as long it remains within specified limits. BANK SELECT SCHEME FOR TWO 4MX1 DRAMS Figure 4 DRAM


OCR Scan
PDF DS1262 16Mx1 28-pin DS1262 1N5817 DS1262S
Supplyframe Tracking Pixel