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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
TMS465169P-40DGE Texas Instruments 4MX16 EDO DRAM, 40ns, PDSO50
TMS416169A-50DZ Texas Instruments 1MX16 EDO DRAM, 50ns, PDSO42
TMS416169A-60DZ Texas Instruments 1MX16 EDO DRAM, 60ns, PDSO42
TMS416169A-70DZ Texas Instruments 1MX16 EDO DRAM, 70ns, PDSO42
TMS418169A-60DZR Texas Instruments 1MX16 EDO DRAM, 60ns, PDSO42
TMS465169-40DGE Texas Instruments 4MX16 EDO DRAM, 40ns, PDSO50

4M DRAM EDO Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
A12837

Abstract: ISO11172-2 633013 DD0-DD15 DD15 DRAM arbiter LC74202E MPEG-1 Encoder QIP100E
Text: ) CD­DSP (LC78631E) VCO+PLL (54MHz) 1M­ DRAM (option)( EDO ) Track 1 information CD­ROM decoder LC74202E 4M­DRAM ( EDO ) DRAM Arbiter SYSTEM decoder Start Trigger MPEG Audio PST , strobe ( 4M-DRAM ) 87 WE OUT Write enable 89 CAS OUT Column address , .6330-12/13 LC74202E DRAM DRAM ( 4M ) $00000 $01000 $04000 user area 8K­byte DRAM (4M+1M , $4d400 $4 f f f f DRAM ( 4M ) B $00000 $02800 $04000 user area 20K­byte video bit buffer


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PDF O0599 LC74202E LC74202ECD1 1M106k EIA608 QIP100E O0599TS B8-4843 TEST11 A12837 ISO11172-2 633013 DD0-DD15 DD15 DRAM arbiter LC74202E MPEG-1 Encoder QIP100E
1995 - IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 KM4232W259Q60 GM72V1682 IBM025171LG5D-70 KM44S4020AT KM416S1120A
Text: / Access Time IBM0116405PT1D-60 EDO DRAM 16Mb 4M x 4 IBM0116405PT1D-70 EDO DRAM 16Mb , /s MSM5416257A Burst DRAM 4M 256Kx16 50ns 80MHz 160MB/s MSM5416258A EDO 4M , EDO EDO EDO EDO EDO EDO SDRAM SDRAM SGDRAM SDRAM SDRAM SDRAM 4M 4M 4M 4M 16M 16M , Organization Clock Rate/ Access Time HY512264 HY514264B HY5lV4264B EDO 2M 4M 4M 128Kxl6 , -70 IBM117805PT3D-60 EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM IBM117805PT3D


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PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 KM4232W259Q60 GM72V1682 IBM025171LG5D-70 KM44S4020AT KM416S1120A
Not Available

Abstract: No abstract text available
Text: ) ) Semiconductor Group 366 4.96 SIEMENS HYB 5116(7)405B J-50/-60/-70 4M X 4- EDO DRAM The HYB 5116(7 , Configuration (top view) HYB 5116(7)405BJ-50/-60/-70 4M X 4- EDO DRAM P-SOJ-26/24 300 mil ' ccC 'o 1 , 369 SIEMENS HYB 5116(7)405BJ-50/-60/-70 4M x 4- EDO DRAM 1/01 I/0 2 1/03 1/04 1 Data In B , 370 SIEMENS Absolute Maximum Ratings HYB 5116(7)405BJ-5Q/-60/-70 4M X 4- EDO DRAM Operating , )405BJ-50/-60/-70 4M X 4- EDO DRAM DC Characteristics (note: values in brackets for HYB 5117405 BJ


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PDF 5116405BJ 5117405BJ 5116405BJ-50) 5116405BJ-60) 5116405BJ-70) 5117405BJ-50) 5117405BJ-60) 5117405BJ-70) 405BJ-50/-60/-70 85max
Not Available

Abstract: No abstract text available
Text: IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features · 4,194,304 word by , IBM0117405M IBM0117405 IBM0117405P IBM0117405B 4M x 4 11/11 EDO DRAM Ordering Information Part Number , IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Block Diagram Page 151 IBM0117405M IBM0117405 IBM0117405P IBM0117405B 4M x 4 11/11 EDO DRAM Truth Table Function Standby Read Early-Write Delayed-Write , Data Out Page 152 IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM


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PDF IBM0117405 IBM0117405M IBM0117405B IBM0117405P 104ns 124ns IBM0117405P
1998 - 5117405

Abstract: No abstract text available
Text: HYB5116(7)405BJ/BT-50/-60/-70 4M x 4- EDO DRAM The HYB 5116(7)405BJ/BT is a 16MBit dynamic RAM , . not connected Semiconductor Group 2 HYB5116(7)405BJ/BT-50/-60/-70 4M x 4- EDO DRAM P-SOJ , ) HYB5116(7)405BJ/BT-50/-60/-70 4M x 4- EDO DRAM DC Characteristics( note : values in brackets for HYB , 7 pF Semiconductor Group 7 HYB5116(7)405BJ/BT-50/-60/-70 4M x 4- EDO DRAM AC , Semiconductor Group tOEA 8 HYB5116(7)405BJ/BT-50/-60/-70 4M x 4- EDO DRAM AC Characteristics


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PDF HYB5116405BJ/BT HYB5117405BJ/BT HYB5116405BJ/BT-50) HYB5116405BJ/BT-60) HYB5116 405BJ/BT-50/-60/-70 GPJ05628 P-TSOPII-26/24 300mil) GPX05857 5117405
2000 - Not Available

Abstract: No abstract text available
Text: PAGE MODE WITH EDO , 4M X 32 DRAM SODIMM Using 4M X 16, 4K REFRESH, 3.3V ABSOLUTE MAXIMUM RATINGS , MODE WITH EDO , 4M X 32 DRAM SODIMM Using 4M X 16, 4K REFRESH, 3.3V CAPACITANCE (Ta = 25 ºC, Vcc , WITH EDO , 4M X 32 DRAM SODIMM Using 4M X 16, 4K REFRESH, 3.3V NOTES 1. An initial pause of , EDO , 4M X 32 DRAM SODIMM Using 4M X 16, 4K REFRESH, 3.3V PACKAGE DIMENSIONS AVED Memory Products , -60 FAST PAGE MODE WITH EDO , 4M X 32 DRAM SODIMM Using 4M X 16, 4K REFRESH, 3.3V Revision: A Revision


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PDF AVED4F324LDM16-60 AVED4F324LDM16-60 72-pin
Not Available

Abstract: No abstract text available
Text: Page Mode Cycle Time 4M X 16 12/10 EDO DRAM Dual CAS Byte Read/Write Performance: -50 50ns , -4239-01 Revised 4/96 Page 519 IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Preliminary Ordering , IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Truth Table Function Standby Read: Word Read: Lower Byte , IBM0165165P 4M x 16 12/10 EDO DRAM Absolute Maximum Ratings Symbol V Cc Parameter Power Supply Voltage , PF PF Notes Page 522 Preliminary 4M X IBM0165165B IBM0165165P 16 12/10 EDO DRAM DC


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PDF IBM0165165B IBM0165165P 256ms 104ns 526mW IBM0165165P
0116405

Abstract: No abstract text available
Text: IBM0116405 IBM0116405P IBM0116405B 4M x 4 12/10 EDO DRAM Ordering Information Part Number S P /L P SP SP , IBM0116405 IBM0116405P IBM0116405B 4M X 4 12/10 EDO DRAM DC Electrical Characteristics Symbol (t a= o , IIH I IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM ( t a = o to +70-c, vcc , 4M x 4 12/10 EDO DRAM Write Cycle -5 0 Symbol Param eter Min. twcs Iwch twp ÏRWL tcwi tos ÏDH W , IBM0116405B 4M x 4 12/10 EDO DRAM Read-Modify-Write Cycle -50 Symbol Param eter Min. tRWC tRWD tcWD I awd


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PDF IBM0116405 IBM0116405M IBM0116405B IBM0116405P 104ns 124ns 200nA 300nA 0116405
0165165BT3C-60

Abstract: No abstract text available
Text: IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit , IBM0165165P 4M x 16 12/10 EDO DRAM Ordering Information Part Number Power 5 Self Refresh IBM , /015 88H 2011 G A14-4250-02 Revised 11/97 IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM , the end of this document. Page 3 of 28 IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM , of 28 88H 2011 G A14-4250-02 Revised 11/97 IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM


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PDF IBM0165165B IBM0165165P 104ns 504mW 0165165BT3C-60
Not Available

Abstract: No abstract text available
Text: Page 549 IBM0164165B IBM0164165P 4M x 16 13/9 EDO DRAM Preliminary Ordering Information Part , ) Data I/O Capacitance (1/00 -1/015) Page 552 IBM 0164165B IBM 0164165P 4M x 16 13/9 EDO DRAM , condition. Page 553 IBM0164165B IBM0164165P 4M x 16 13/9 EDO DRAM AC Characteristics (Ta=o to , 554 IBM0164165B IBM0164165P 4M x 16 13/9 EDO DRAM Write Cycle -50 Symbol Parameter Min , IBM0164165P 4M x 16 13/9 EDO DRAM J L =~^-_ = - = ' " Preliminary Read Cycle -50 Symbol *RAC tcAC tAA


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PDF IBM0164165B IBM0164165P 104ns
Not Available

Abstract: No abstract text available
Text: IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features • Low Power , OOO l i S bH 2TD ■IBM0117405M IBM0117405 IBM0117405P IBM0117405B 4M x 4 11/11 EDO DRAM , IBM00117405P) 1 3 7 IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Block , 73 IBM0117405M IBM0117405 IBM0117405P IBM0117405B 4M x 411/11 EDO DRAM Truth Table Function , IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM AC Characteristics ( t a= o to


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PDF IBM0117405 IBM0117405M IBM0117405B IBM0117405P 28H4726 28H4726. 350ns 350ns)
1996 - 5117405

Abstract: smd code Wl3 5117405BJ-60
Text: HYB5116(7)405BJ/BT-50/-60/-70 4M x 4- EDO DRAM The HYB 5116(7)405BJ/BT is a 16MBit dynamic RAM , . not connected Semiconductor Group 2 HYB5116(7)405BJ/BT-50/-60/-70 4M x 4- EDO DRAM P-SOJ , ) HYB5116(7)405BJ/BT-50/-60/-70 4M x 4- EDO DRAM DC Characteristics( note : values in brackets for HYB , ) CIO ­ 7 pF Semiconductor Group 7 HYB5116(7)405BJ/BT-50/-60/-70 4M x 4- EDO DRAM , 37 ns 7 HYB5116(7)405BJ/BT-50/-60/-70 4M x 4- EDO DRAM AC Characteristics (cont'd) 5)6


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PDF HYB5116405BJ/BT HYB5117405BJ/BT HYB5116405BJ/BT-50) HYB5116405BJ/BT-60) HYB53 HYB5116 405BJ/BT-50/-60/-70 GPJ05628 P-TSOPII-26/24 300mil) 5117405 smd code Wl3 5117405BJ-60
0117405

Abstract: No abstract text available
Text: 4M x 4 11/11 EDO DRAM Ordering Information Part Number IBM0117405T1 -50 IBM0117405T1 -60 , IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Block Diagram Vss r (to OCDs) Vcc (5.0 Volt , IBM0117405 IBM0117405B IBM0117405M IBM0117405P 4M x 4 11/11 EDO DRAM Truth Table Function Standby , -4228-03 Revised 11/96 Page 4 of 30 IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM , IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM AC Characteristics (t a = o to + 7 0 'c , v c


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PDF IBM0117405 IBM0117405M IBM0117405B IBM0117405P 104ns 28H4726 SA14-4228-03 0117405
Not Available

Abstract: No abstract text available
Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • Low Power , document. Page 1 of 30 IBM0116405 IBM0116405B IBM0116405M IBM0116405P 4M x 4 12/10 EDO DRAM , document. Page 3 of 30 IBM0116405 IBM0116405B IBM0116405M IBM0116405P 4M x 4 12/10 EDO DRAM , 4M x 4 12/10 EDO DRAM Absolute Maximum Ratings Rating Symbol Parameter j Units j Notes 3 , IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM AC Characteristics ( t a = o to


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PDF IBM0116405 IBM0116405M IBM0116405B IBM0116405P
1996 - IBM01164054M

Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M
Text: IBM0116405P 4M x 4 12/10 EDO DRAM Features · 4,194,304 word by 4 bit organization · Single 3.3V ± 0.3V or , IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Block Diagram Vcc I/O0 I/O3 4 Vss 4 , IBM0116405P IBM0116405B 4M x 4 12/10 EDO DRAM Truth Table Function Row Column Address Address RAS , SA14-4226-03 Revised 4/96 IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM , . Page 5 of 30 IBM0116405M IBM0116405 IBM0116405P IBM0116405B 4M x 4 12/10 EDO DRAM DC


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PDF IBM01164054M IBM0116405P4M IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M IBM0116405B IBM0116405P
Not Available

Abstract: No abstract text available
Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features · 4,194,304 word by , . Page 1 of 30 IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Ordering , IBM0116405P 4M x 4 12/10 EDO DRAM Block Diagram l/OO (5.0 Volt version) (to OCDs) I/0 3 Vss 0 Vcc , IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Absolute Maximum Ratings Rating Symbol j VC c V , IBM0116405P 4M x 4 12/10 EDO DRAM DC Electrical Characteristics Symbol ii o o > o > C O o +i > C O C O


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PDF IBM0116405 IBM0116405M IBM0116405B IBM0116405P
Not Available

Abstract: No abstract text available
Text: IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit , provisions at the end of this document. Page 1 of 28 IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM , 4-4250-01 Revised 4/97 Page 2 of 28 IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Truth Table , . Page 3 of 28 IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Absolute Maximum Ratings Symbol , IBM0165165P 4M x 16 12/10 EDO DRAM AC Characteristics (Ta=o to +70°c, v cc=3.3 ± 0.3V) 1. An initial


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PDF IBM0165165B IBM0165165P 1104ns 504mW 88H201 A14-4250-01
0116405

Abstract: No abstract text available
Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features · 4,194,304 word by , IBM0116405P 4M x 4 12/10 EDO DRAM Block Diagram l/OO (5.0 Volt version) I/03 Vss 0 Vcc i , IBM0116405M IBM0116405P 4M x 4 12/10 EDO DRAM Truth Table Function Standby Read Early-Wri te Delay , IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Absolute Maximum Ratings Rating Symbol v cc V , IBM0116405P 4M x 4 12/10 EDO DRAM DC Electrical Characteristics Symbol ( t a = o to +70'c, v Cc


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PDF IBM0116405 IBM0116405M IBM0116405B IBM0116405P SA14-4226-06 0116405
1997 - Not Available

Abstract: No abstract text available
Text: ; 3/99 last ship) IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Ordering , IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Block Diagram Vss Vcc I/O0 (5.0 Volt , last ship) IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Truth Table , ) IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Absolute Maximum Ratings Rating , ) IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM AC Characteristics (TA= 0 to +70°C


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PDF IBM01174054M EDOMMDD64DSU-001012331. IBM0117405P4M SRMMDD64DSU-001012331. IBM0117405M4M IBM0117405B4M IBM0117405 IBM0117405M
1996 - IBM0165165P4M

Abstract: TSOP-54 IBM0165165B4M 500MIL
Text: IBM0165165P 4M x 16 12/10 EDO DRAM Features · 4,194,304 word by 16 bit organization · Dual CAS Byte Read , IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Ordering Information Part Number Power Self Refresh , IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Truth Table Function Row Column Address Address , . Page 3 of 30 IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Absolute Maximum Ratings Symbol , -4239-01 Revised 4/96 IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM DC Electrical Characteristics (TA = 0


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PDF IBM0165165B4M IBM0165165P4M IBM0165165B IBM0165165P 104ns TSOP-54 500MIL
1996 - IBM01174054M

Abstract: IBM0117405B4M IBM0117405M4M IBM0117405P4M
Text: IBM0117405P 4M x 4 11/11 EDO DRAM Features · 4,194,304 word by 4 bit organization · Single 3.3V ± 0.3V or , IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Block Diagram Vss Vcc I/O0 (5.0 Volt version) I , IBM0117405P IBM0117405B 4M x 4 11/11 EDO DRAM Truth Table Function Row Column Address Address RAS , SA14-4228-02 Revised 4/96 IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM , . Page 5 of 30 IBM0117405M IBM0117405 IBM0117405P IBM0117405B 4M x 4 11/11 EDO DRAM DC


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PDF IBM01174054M IBM0117405P4M IBM0117405M4M IBM0117405B4M IBM0117405 IBM0117405M IBM0117405B IBM0117405P
Not Available

Abstract: No abstract text available
Text: HYB3116(7)405BJ/BT(L)-50/-60 4M x 4 - EDO DRAM Pin Names and Configuration: HYB5(3) 16405 4k , HYB5116(7)405BJ-50/-60 HYB3116(7)405BJ/BT(L)-50/-60 4M X 4 - EDO DRAM 1/01 I/02 I/03 I/04 1111 WE , HYB3116(7)405B J/BT(L)-50/-60 4M X 4 - EDO DRAM 1/01 I/02 I/03 I/04 1111 WE CÄS & No. 2 Clock , HYB5116(7)405BJ-50/-60 HYB3116(7)405BJ/BT(L)-50/-60 4M x 4 - EDO DRAM Absolute Maximum Ratings , /-60 4M x 4 - EDO DRAM DC Characteristics (cont'd) Ta = 0 to 70 °C ,V q S = 0 V, t j = 2 ns


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PDF HYB5116405B J/BT-50/-60 HYB5117405B HYB3116405BJ( HYB3117405BJ( P-SOJ-26/24 300mil) P-TSOPI1-26/24-1
1996 - IBM01174054M

Abstract: IBM0117405B4M IBM0117405M4M IBM0117405P4M
Text: IBM0117405P 4M x 4 11/11 EDO DRAM Features · 4,194,304 word by 4 bit organization · Single 3.3V ± 0.3V or , document. Page 1 of 30 IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM , IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Absolute Maximum Ratings Rating Symbol , IBM0117405P 4M x 4 11/11 EDO DRAM DC Electrical Characteristics Symbol ICC1 (TA= 0 to +70°C, VCC , SA14-4228-03 Revised 11/96 IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM


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PDF IBM01174054M IBM0117405P4M IBM0117405M4M IBM0117405B4M IBM0117405 IBM0117405M IBM0117405B IBM0117405P
1996 - IBM01164054M

Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M
Text: IBM0116405P 4M x 4 12/10 EDO DRAM Features · 4,194,304 word by 4 bit organization · Single 3.3V ± 0.3V or , IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Block Diagram Vcc I/O0 I/O3 4 Vss 4 , IBM0116405P IBM0116405B 4M x 4 12/10 EDO DRAM Truth Table Function Row Column Address Address RAS , SA14-4226-03 Revised 4/96 IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM , . Page 5 of 30 IBM0116405M IBM0116405 IBM0116405P IBM0116405B 4M x 4 12/10 EDO DRAM DC


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PDF IBM01164054M IBM0116405P4M IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M IBM0116405B IBM0116405P
1996 - IBM01164054M

Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M ibm0116
Text: IBM0116405P 4M x 4 12/10 EDO DRAM Features · 4,194,304 word by 4 bit organization · Single 3.3V ± 0.3V or , document. Page 1 of 30 IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM , . Page 3 of 30 IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Truth Table , IBM0116405P 4M x 4 12/10 EDO DRAM Absolute Maximum Ratings Rating Symbol Parameter Units Notes , IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM AC Characteristics (TA= 0 to +70°C


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PDF IBM01164054M IBM0116405P4M IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M IBM0116405B IBM0116405P ibm0116
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