The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
BQ4013LYMA-70 BQ4013LYMA-70 ECAD Model Texas Instruments NON-VOLATILE SRAM MODULE
BQ4015YMA-70 BQ4015YMA-70 ECAD Model Texas Instruments 512KX8 NON-VOLATILE SRAM MODULE, 70ns, PDIP32
BQ4014MB-85 BQ4014MB-85 ECAD Model Texas Instruments 256KX8 NON-VOLATILE SRAM MODULE, 85ns, PDIP32
BQ4017MC-70 BQ4017MC-70 ECAD Model Texas Instruments 2MX8 NON-VOLATILE SRAM MODULE, 70ns, PDIP36
BQ4011MA-150 BQ4011MA-150 ECAD Model Texas Instruments 32KX8 NON-VOLATILE SRAM MODULE, 150ns, PDIP28
BQ4011MA-100 BQ4011MA-100 ECAD Model Texas Instruments 32KX8 NON-VOLATILE SRAM MODULE, 100ns, PDIP28

4Kx8 sram ttl Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 4Kx8 sram ttl

Abstract: 4kx8 sram FM2008-70-S SRAM 4KX8 FM2008 128Kx8 ramtron FM2008 4Kx8 bit
Text: SRAM Modules · No battery concerns · Monolithic reliability · True surface mount solution, no rework steps · Superior for moisture, shock, and vibration · Resistant to negative voltage undershoots SRAM Compatible · JEDEC 128Kx8 SRAM pin out · 55 ns access time · 80 ns cycle time · Equal access & cycle time for , battery-backed SRAM . It's fast write and high writeendurance make it superior to other types of nonvolatile , memory process. Unlike battery-backed SRAM , the FM2008 is a truly monolithic nonvolatile memory. It


Original
PDF FM2008 128Kx8 32-pin 450-mil) 4Kx8 sram ttl 4kx8 sram FM2008-70-S SRAM 4KX8 FM2008 128Kx8 ramtron FM2008 4Kx8 bit
1995 - P-Channel Depletion-Mode

Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Text: CMOS Analog Switch with TTL Input DG387AAA/883 Mono CMOS Analog Switch with TTL Input DG387AAK/883 Mono CMOS Analog Switch with TTL Input DG390AAK/883 Mono CMOS Analog Switch with TTL , SPDT CMOS Analog Switch DG390AAK Mono CMOS Analog Switch TTL Input DG403AK Dual SPDT CMOS , ) DESCRIPTION CLOSEST MHS MIL P/N PACKAGE 5962-3829409MXA 55ns 8Kx8 SRAM HM1E-65764N/883 CDIL28 600 MILs 5962-3829409MYC 55ns 8Kx8 SRAM HM4 -65764N/883 LCC32 5962-3829409MZA


Original
PDF 2N5547JANTX 2N5547JANTXV 2N4856JAN 2N6660JANTX 2N4856JANTX 2N6660JANTXV 2N4856JANTXV 2N6661JAN 2N4857JAN 2N6661JANTX P-Channel Depletion-Mode MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
intel 2732 eprom

Abstract: intel 2732 2732 eprom IC 2732 pin diagram of ic 2732 pin diagram of ic 2764 4Kx8 rom ttl eprom 2732 ram 2732 2kx8 sram
Text: (+5V) GND GROUND LOGIC SYMBOL 2Kx8 SRAM PIN CONFIGURATION 2Kx8 SRAM 4Kx8 SRAM COMPATIBLE PINOUTS 8Kx8 SRAM 8Kx8 EPROM Ao A, NC C *' 28 □ Vcc NCC 1 ^ 28 □ Vcc Vp„C 2fT □ Vcc Do â , ) OND GROUND LOGIC SYMBOL 4Kx8 PIN CONFIGURATION 4Kx8 SRAM COMPATIBLE PINOUTS 8Kx8 SRAM 8Kx8 EPROM , 2. Compatible Pinouts 1-72 mmMQM OMiPÛfôGMTIM 4Kx8 4096 x 8-BIT STATIC RAM ■Fully Static , -Pin Package — Allows Easy Upgrade To 8K x 8 SRAM Without Jumpers ■Two Line Control, ÜE Controls


OCR Scan
PDF 24-Pin 384-bit 28-pin The2732s 2732s. 2732s intel 2732 eprom intel 2732 2732 eprom IC 2732 pin diagram of ic 2732 pin diagram of ic 2764 4Kx8 rom ttl eprom 2732 ram 2732 2kx8 sram
2764 eprom PINOUT

Abstract: 4Kx8 sram ttl 2764 RAM 4Kx8 rom ttl 4kx8 sram INTEL 2764 EPROM INTEL 2764 SRAM 4KX8 4kx8 static ram ttl 2Kx8 SRAM
Text: (+5V) GND GROUND LOGIC SYMBOL 2Kx8 SRAM PIN CONFIGURATION 2Kx8 SRAM 4Kx8 SRAM COMPATIBLE PINOUTS 8Kx8 SRAM 8Kx8 EPROM Ao A, NC C *' 28 □ Vcc NCC 1 ^ 28 □ Vcc Vp„C 2fT □ Vcc Do â , ) OND GROUND LOGIC SYMBOL 4Kx8 PIN CONFIGURATION 4Kx8 SRAM COMPATIBLE PINOUTS 8Kx8 SRAM 8Kx8 EPROM , 2. Compatible Pinouts 1-72 mmMQM OMiPÛfôGMTIM 4Kx8 4096 x 8-BIT STATIC RAM ■Fully Static , -Pin Package — Allows Easy Upgrade To 8K x 8 SRAM Without Jumpers ■Two Line Control, ÜE Controls


OCR Scan
PDF 24-Pin 384-bit 28-pin 2764s 2764 eprom PINOUT 4Kx8 sram ttl 2764 RAM 4Kx8 rom ttl 4kx8 sram INTEL 2764 EPROM INTEL 2764 SRAM 4KX8 4kx8 static ram ttl 2Kx8 SRAM
PAC1000

Abstract: WSI MagicPro II Programmer AP1685
Text: Programming Support Tools 4Kx8 SRAM PC-XT/AT/PS2 platform support Program mable address decoder , Software 16Kx8 or 8Kx16 EPROM 4Kx8 or 2Kx16 SRAM MagicPro device program m er (PC-XT, AT) 2M , The device also includes 32K bits of high­ speed SRAM . The SRAM is configured in byte mode as 4Kx8 , and the SRAM as 4Kx8 . The outputs of both are tied to the eight low-order input/ output lines l/O0 l , 8Kx16 SRAM Configuration 4Kx8 4Kx8 2Kx16 2Kx16 I/O Pins 8 8 16 16


OCR Scan
PDF MAP168 16Kx8 8Kx16 2Kx16 44-pin PAC1000 WSI MagicPro II Programmer AP1685
1996 - a7r smd

Abstract: smd marking A4L smd a4l A1L smd
Text: Type: (7C138) = 4Kx8 Dual-Port SRAM (7C139) = 4Kx9 Dual-Port SRAM Notes: 1. Lead finish (A,C, or X , Standard Products UT7C138/139 4Kx8 /9 Radiation-Hardened Dual-Port Static RAM with Busy Flag , , TTL /CMOS compatible output levels q Three-state bidirectional data bus q Low operating and standby , DESCRIPTION 3 The UT7C138/139 consists of an array of 4K words of 8 or 9 bits of dual-port SRAM cells , Fluence2 Memory Device Cross Section @ LET = 120MeV-cm2/mg 1.0E6 65 3.0E14 < 1.376E-2 ( 4Kx8 ) < 1.548E-2


Original
PDF UT7C138/139 MIL-STD-883 68-lead 68-pin DUALPORT-2-12-97 a7r smd smd marking A4L smd a4l A1L smd
4kx8 sram

Abstract: SRAM 4KX8 8kx8 sram DOC11 4Kx8 bit 2732 8kx8 eprom pin diagram 2764 eprom PINOUT sram 8kx8 vc128 8kx8 RAM
Text: 4Kx8 SRAM COMPATIBLE PINOUTS 8Kx8 SRAM 8Kx8 EPROM Ao NCC 1 28 □ Vcc Ncq 1 28 □ Vcc v„c 1 28 â , mmMQM OMiPÛfôGMTIM 4Kx8 4096 x 8-BIT STATIC RAM ■Fully Static Operation; No Clocks, Refresh or , Upgrade To 8K x 8 SRAM Without Jumpers ■Two Line Control, ÜE Controls Power-Down, ÖE Controls Output Buffers — Eliminates Bus Contention ■150 ns Maximum Access Time ■Auto Power-Down The Intel9 4Kx8 , 8Kx8 static RAMs and compatibility to the 2732 4Kx8 and 2764 8Kx8 EPROMs — without jumpers. The two


OCR Scan
PDF 28-Pin 768-bit 4kx8 sram SRAM 4KX8 8kx8 sram DOC11 4Kx8 bit 2732 8kx8 eprom pin diagram 2764 eprom PINOUT sram 8kx8 vc128 8kx8 RAM
1996 - dualport

Abstract: smd dual diode A4l smd transistor marking a5l A1L smd diode SMD A11L smd a4l smd transistor A7R marking a7r smd SMD A9L smd diode a3l
Text: operation Device Type: (7C138) = 4Kx8 Dual-Port SRAM (7C139) = 4Kx9 Dual-Port SRAM Notes: 1. Lead , Standard Products UT7C138/139 4Kx8 /9 Radiation-Hardened Dual-Port Static RAM with Busy Flag , inputs, TTL /CMOS compatible output levels q Three-state bidirectional data bus q Low operating and , The UT7C138/139 consists of an array of 4K words of 8 or 9 bits of dual-port SRAM cells, I/O and , Cross Section @ LET = 120MeV-cm 2/mg < 1.376E -2 ( 4Kx8 ) cm2 READ OPERATION When reading the


Original
PDF UT7C138/139 MIL-STD-883 68-lead 68-pin DUALPORT-2-12-97 dualport smd dual diode A4l smd transistor marking a5l A1L smd diode SMD A11L smd a4l smd transistor A7R marking a7r smd SMD A9L smd diode a3l
Not Available

Abstract: No abstract text available
Text: €¢ • • BANKA BANKA AO -L A T C H Jk 12 4KX8 SRAM 4KX8 SRAM 12 , 12 BANK B BANK B 12 4KX8 SRAM 4KX8 SRAM CE CSÏ CE LOWER BYTE SELECT , SRAM , SINGLE 8 K x 1 6 SRAM CACHE DATA STATIC RAM CONFIGURABLE CACHE DATA SRAM FEATURES , configurable as a single 8 K x l 6 SRAM • Built-in input address latches • Separate upper and lower Byte , MT56C0816 is one of a family of fast SRAM cache memories. It employs a high speed, low power design using


OCR Scan
PDF T-46-23-12 A0-A11 0001M2M
1996 - Not Available

Abstract: No abstract text available
Text: Inputs, 5.0V operation Device Type: (7C138) = 4Kx8 Dual-Port SRAM (7C139) = 4Kx9 Dual-Port SRAM Notes , Standard Products UT7C138/139 4Kx8 /9 Radiation-Hardened Dual-Port Static RAM with Busy Flag , inputs, TTL /CMOS compatible output levels G Three-state bidirectional data bus G Low operating and , of an array of 4K words of 8 or 9 bits of dual-port SRAM cells, I/O and address lines, and control , -2 ( 4Kx8 ) cm2 READ OPERATION When reading the device, the user must assert both the OE and CE


Original
PDF UT7C138/139 MIL-STD-883 68-lead 68-pin DUALPORT-2-12-97
2003 - Not Available

Abstract: No abstract text available
Text: AL5DAxxxx 3.3V, 5V Asynchronous Dual-Port SRAM 1k/2k/4K/8K/16K/32K x 8/9/16/18-bit Features True dual port memory cells up to 256/288Kb Fully asynchronous dual-port SRAM aimed at communications , 0L - 9L CE L OE L UB L Left Address Decoder Right I/O Control True Dual-Port SRAM , -bit organization (AL5DA132; Master; Busy; 3.3V or 5.V) 4Kx8 -bit organization (AL5DA134; 3.3V or 5.V) 4Kx8 -bit organization (AL5DA004; Semaphore; 3.3V or 5.V) 4Kx8 -bit organization (AL5DA138; Master/Slave; Busy Interrupt


Original
PDF 1k/2k/4K/8K/16K/32K 8/9/16/18-bit 256/288Kb 1-F-PMK008-0001
2003 - Not Available

Abstract: No abstract text available
Text: AL5DAxxxx 3.3V, 5V Asynchronous Dual-Port SRAM 1k/2k/4K/8K/16K/32K x 8/9/16/18-bit Features True dual ported memory cells up to 256/288Kb Comprehensive asynchronous dual-port SRAM aimed at , -bit organization (AL5DA132; Master; Busy; 3.3V or 5.V) 4Kx8 -bit organization (AL5DA134; 3.3V or 5.V) 4Kx8 -bit organization (AL5DA004; Semaphore; 3.3V or 5.V) 4Kx8 -bit organization (AL5DA138; Master/Slave; Busy Interrupt , .V) For more information regarding AL5DAxxxx asynchronous Dual-Port SRAM or other AverLogic products


Original
PDF 1k/2k/4K/8K/16K/32K 8/9/16/18-bit 256/288Kb 1-F-PMK008-0001
2003 - 9l15

Abstract: 1517R 4kx8 sram 4Kx8 Dual-Port Static RAM 2Kx16bit bit-slice
Text: AL5DAxxxx 3.3V, 5V Asynchronous Dual-Port SRAM 1k/2k/4K/8K/16K/32K x 8/9/16/18-bit Features ! True dual port memory cells up to 256/288Kb ! Fully asynchronous dual-port SRAM aimed at , (AL5DA132; Master; Busy; 3.3V or 5.V) 4Kx8 -bit organization (AL5DA134; 3.3V or 5.V) 4Kx8 -bit organization (AL5DA004; Semaphore; 3.3V or 5.V) 4Kx8 -bit organization (AL5DA138; Master/Slave; Busy Interrupt Semaphore , .V) For more information regarding AL5DAxxxx asynchronous Dual-Port SRAM or other AverLogic products


Original
PDF 1k/2k/4K/8K/16K/32K 8/9/16/18-bit 256/288Kb 1-F-PMK008-0001 9l15 1517R 4kx8 sram 4Kx8 Dual-Port Static RAM 2Kx16bit bit-slice
4kx8 sram

Abstract: a26c T-46-23-12 4Kx8 sram ttl 4kx8 static ram ttl 88H04C EDH88H04C-25CC EDH88H04C-35CC EDH88H04C-45CC EDH88H04C-55CC
Text: 88H04C 25/35/45/55 Module 4Kx8 SRAM CMOS, High Speed Module Features The EDH 88H04C is a 32K-bit high , in military temperature ranges. All inputs and outputs are TTL compatible and operate from a single , Configuration and Block Diagram 32K-Bit CMOS Static Random Access Memory Module, Organized as 4Kx8 • Access Times of 25,35,45 and 55ns •Fully Static, No Clocks • Data Retention Function • TTL Compatible , Operating Power Supply Current 'CC1 ~É = vIL.'l/O=0mA Min Cycle 230 250t 260tt mA Standby ( TTL ) Power


OCR Scan
PDF 0D0010S T-46-23-12 88H04C 88H04C 32K-bit MIL-STD-883, R4C-35CMHR 4kx8 sram a26c T-46-23-12 4Kx8 sram ttl 4kx8 static ram ttl EDH88H04C-25CC EDH88H04C-35CC EDH88H04C-45CC EDH88H04C-55CC
4kx8 sram

Abstract: rtc with internal backup battery BD262 jl bd SRAM 4KX8 real time clock calendar bq3387
Text: WRITE-PROTECT SOW NT OUT AO A7 RAM - 4Kx8 DO AS • D7 A11 OÊ WE CE To Latches And SRAM , 4K x 8 nonvolatile SRAM , accessed using RAM control pins > Integral lithium cell and crystal , Real-Time Clock Module With 4Kx8 RAM General Description ^ 24 oer l 1 Vcc nc c 2 23 h sqw nc l 3 , general nonvolatile storage, and an additional 4Kx 8 of user-programmable nonvolatile SRAM . The bq3387


OCR Scan
PDF bq3387 BD-26 4kx8 sram rtc with internal backup battery BD262 jl bd SRAM 4KX8 real time clock calendar bq3387
Not Available

Abstract: No abstract text available
Text: Advance Information BENCHMARQ bq3387 ReaKTme Clock Module With 4Kx8 RAM General , ► 50 bytes of general nonvolatile storage >• Additional 4K x 8 nonvolatile SRAM , accessed using , nonvolatile storage, and an addition­ al 4K x 8 of user-programmable non­ volatile SRAM . G ro u n d , NT RTC CS (64 BYTES) a d 0- a d 7 OUT n z — L-LATCH To Latches And SRAM , Contro) CC Lithium C «l X . RAM • 4Kx8 QO AS 03 DO • D7 A11 CK OE


OCR Scan
PDF bq3387 24-hour BD-26
D1C12

Abstract: 52832 CERAMIC LEADLESS CHIP CARRIER 52832HR 52832I IN3064 030070 TIME00 4Kx8 ram ttl NCR Microelectronics Division
Text: NiClR 52832 32K ( 4Kx8 ) EEPROM > Electrically Erasable PROM • Advanced SNOS N-Channel , a 32K bit ( 4Kx8 ) Electrically Erasable PROM utilizing the Silicon-Nitride-Oxide-Silicon (SNOS , inputs and data l/O's, are TTL compatible. This feature, combined with access times of 300 ns and a , €” 0 ERASE-WRITE LOGIC MEMORY ARRAY ( 4Kx8 ) COLUMN DECODE DATA I/O Copyright © 1984 by NCR , internal latches. In this mode, data is loaded much the same way as it is for a SRAM . Both CNTL lines are


OCR Scan
PDF
52832

Abstract: NCR 52832 prom NCR Microelectronics Division 4Kx8 sram ttl 4kx8 sram 52832HR IN3064 SRAM 4KX8 SRAM A0-A11, D0-D7 4kx8 static ram ttl
Text: NCR 52832 32K ( 4Kx8 ) EEPROM ' Electrically Erasable PROM Advanced SNOS N-Channel Technology 1 , Byte-Wide Pinout • Optional 32 Pin LCC Available • Page Alterable The NCR 52832 is a 32K bit ( 4Kx8 , data retention time. All control line inputs, as well as the address inputs and data l/O's, are TTL , Select OE WE zg O-i CS o CNTL1 CNTL2 I i ERASE-WRITE LOGIC MEMORY ARRAY ( 4Kx8 ) DATA I/O , internal latches. In this mode, data is loaded much the same way as it is for a SRAM . Both CNTL lines are


OCR Scan
PDF
a6059

Abstract: No abstract text available
Text: - Device Type: (7C138) = 4Kx8 Dual-Port SRAM (7C139) = 4Kx9 Dual-Port SRAM Notes: 1. Lead finish , M ilitary Standard Products UT7C138/139 4Kx8 /9 Radiation-Hardened Dual-Port Static RAM with Busy , array of 4K words of 8 or 9 bits of dual-port SRAM cells, I/O and address lines, and control signals (CE , current (CMOS) (CMOS) IOL = 8mA, VDD= 4.5V ( TTL ) IOL = 200ptA, V DD = 4.5V (CMOS) Iq h = -4mA, V DD = 4.5V ( TTL ) IOH = -200fiA, V DD = 4.5V (CMOS) / = 1MHz @ 0V / = 1MHz @ 0V VlN = V d D an(l Vss V o = VDD and


OCR Scan
PDF UT7C138/139 11L/CM MIL-STD-883 DPRAM-1-5-96 a6059
2128 RAM

Abstract: 2kx8 EPROM 2764 eprom PINOUT intel 2732 eprom 2128-20 static ram 8K intel eprom 2764 INTEL 1980 INTEL 2764 EPROM 2128-15
Text: to the 2732 4Kx8 and 2764 8Kx8 EPROMs in 28-pin sites. The two line control simplifies decoding and , Vcc POWER (+-5V) GND GROUND LOGIC COMPATIBLE PINOUTS 2K x 8 SRAM EPROM SRAM SRAM EPROM , .1 5V Output Timing Levels.0.4V to 2.4V Output Load.2 TTL Gate and CL =


OCR Scan
PDF 24-Pin 384-bit 2128 RAM 2kx8 EPROM 2764 eprom PINOUT intel 2732 eprom 2128-20 static ram 8K intel eprom 2764 INTEL 1980 INTEL 2764 EPROM 2128-15
2005 - W986416EH

Abstract: W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620
Text: 40 44 44 1K MOVX SRAM I/O 4 /5.5V~2.7V Supply Voltage W77L32 ROM - 1K+256 36 64K 5.5V-2.7V 3 12 UART DPTRWDT 1K MOVX SRAM I/O 4 / UART DPTR W77E58 Flash EPROM 32K 1K+256 36 64K 5.5V-4.5V 3 12 WDT 1K MOVX SRAM I/O 4 /5.5V~2.7V , DPTRWDT 1K MOVX SRAM I/O 4 / UART DPTR W77E516 Flash EPROM 64K 1K+256 32/36 64K 5.5V-4.5V 3 12 WDT 1K MOVX SRAM I/O 4 / UART DPTR W77LE516 Flash EPROM 64K 1K+256 32/36


Original
PDF W78C32C Q4/04 IS25C64A-2 IS25C64A-3 16Kx8 IS25C128-2 W986416EH W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620
4Kx8 rom ttl

Abstract: 2332 eprom 2332 rom 4k 2364A 4kx8 rom NCR Microelectronics Division 2332 rom accessing 4Kx8 rom 24 pin NCR2364A
Text: NCR 2364A 64K BANK SELECTABLE ROM f • 64K Mask Programmable ROM • Organized as two- 4Kx8 , Pin-Out • Fully TTL Compatible • Pin Compatible with 2332 Type ROMs • Programmable Chip Selects , internally to select one of the 4Kx8 ROM banks. Bank selection is accomplished by accessing address locations , standard 32K ROM, but with twice the memory. This ROM requires only 5 Volts, is fully TTL compatible and is , - GND- QO Q1 Q2 Q3 Q4 Q5 Q6 Q7 il il n OUTPUT BUFFERS COLUMN DECODE BANK 1 4Kx8 BANK 0 4Kx8 *MASK


OCR Scan
PDF
2006 - IC1210-m128LQ

Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Text: ISSI ® Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and , . ISSI shipped its first memory device in 1990. It was a 64K asynchronous SRAM . Today, that device is , line of SRAM , from 64Kbit up to 36Mbit densities. In DRAM we have a broad range of low to medium , families. As you will see from this Product Selector Guide, we are a complete SRAM supplier, a complete


Original
PDF
2008 - is25c64B

Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Text: Synchronous Sram Pipelined and Flow-Thru Synchronous SRAM Den Org Part No. Vcc VccQ Speed (Mhz) tKQ (ns , November 2008 www.issi.com Product Selector Guide 408-969-6600 3 Synchronous Sram (Cont'd) No-Wait Synchronous SRAM (Compatible with Zero Bus Turnaround devices) Den Org Part No. Vcc VccQ Speed , 2.5V 133,117 6.5,7.5 TQFP(100) Prod 1Mx36 IS61NVF102436A BGA(165) QUAD/DDR-II Synchronous SRAM , 408-969-6600 www.issi.com Synchronous Sram (Cont'd) QUAD/DDR-II Synchronous SRAM Family Den Org


Original
PDF
2009 - IS23SC55160

Abstract: is25c64B is61wv5128 is62c1024al TSOP2-44 IS61WV51216 is62c51216 tqfp-100 IS43DR16640A is45vs16160d
Text: Synchronous Sram Pipelined and Flow-Thru Synchronous SRAM Den Org Part No. Vcc VccQ Speed (Mhz) tKQ (ns , Dec. 2009 www.issi.com Product Selector Guide 408-969-6600 3 Synchronous Sram (Cont'd) No-Wait Synchronous SRAM (Compatible with Zero Bus Turnaround devices) Den Org Part No. Vcc VccQ Speed , (100) Prod 1Mx36 IS61NVF102436A BGA(165) QUAD/DDR-II Synchronous SRAM Family Den Org Part No , www.issi.com Synchronous Sram (Cont'd) QUAD/DDR-II Synchronous SRAM Family Den Org Part No


Original
PDF
Supplyframe Tracking Pixel