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48C512 datasheet (1)

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Not Available

Abstract: No abstract text available
Text: EEPROMS 48C512 / 48C1024 512 K/1024 K FLASH™ EEPROM July 1987 ADVANCE DATA S H EET , COLUMN ADDRESS IN PUT( 48C512 ) Ao-Ag COLUMN ADDRESS IN P U T(48C 1024) A9 -A 15 ROW ADDRESS INPUT ( 48C512 ) A 10-A 16 MD400032/- WRITE ENABLE I/O 0-7 DATA INPUT(WRITE)/OUTPUT(READ , 15 FOR 48C512 , A0 -A 9 FOR 48C1024, A0 -A 8 FOR 48C512 ROW ADDRESS INPUT(48C 1024) Cà , 48C512 and the 48C1024. A block, which is 512 bytes in the 4 8 C 512 and 1024 bytes in the48C 1024, is


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PDF 48C512/ 48C1024 K/1024 64K/128K 512/48C 12/48C
48C1024

Abstract: 48C512
Text: blocks in both the 48C512 and the 48C1024. A block, w hich Is 512 bytes in the48C 512 and 1024 bytes in , TECHNOLOGY INC 98D 01200 48C512 /48C1024 A D V A N C E D A TA S H E E T T -46-13-27 the , Signature " A row o f fixed ROM is present In the 48C512 and 48C1024 which contains the device's Silicon , SEEQ TECHNOLOGY INC 98D 01201 D 48C512 /48C1024 ' A D V A N C E D A TA S H E E T DC , 98D 01202 48C512 /48C1024 A D V A N C E D A TA S H E E T Absolute Maximum Stress Ratings


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PDF /128K 48C512/48C1024 Q0G1E07 12/48C1024 T-46-13-27 48C1024 48C512
Not Available

Abstract: No abstract text available
Text: Cycling @ KM48C51 2- 7 KM 48C512- 8 KM48C51 2-10 Standby Current (R AS=C A S=V ih) RAS-Only , FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 48C512 is a CMOS 5 2 4 ,2 8 8 , Memory. Its applications high perfor­ The KM 48C512 features Fast Page Mode operation which allows , address strobe (CAS) and the valid row and column address Inputs. Operation of the KM 48C512 begins by , State: Delayed Write (tcwo or tRWD times are not met) Refresh The data in the KM 48C512 is stored


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PDF KM48C512 48C512 KM48C51 130ns 28-LEAD
48C1024

Abstract: No abstract text available
Text: 2) Pin Names Ao-A b A0 -A 9 COLUMN ADDRESS INPUT( 48C512 ) COLUMN ADDRESS INPUT(48C 1024) ROW , NOTE 1 : A 10 - A 16 FOR 48C1024, A9 -A 15 FOR 48C512 , A0 -A 9 FOR 48C1024, A0 -A 8 FOR 48C512 NOTE 2 , /4 -8 2 M48CS12/48C 1024 ADVANCE DATA S H EET FIGURE 1 48C512 /1024 WRITE ALGORITHM e e , /4 -8 4 M 48C 512/48C 1024 ADVANCE DATA SH EET FIGURE 3 48C512 /1024 CHIP ERASE ALGORITHM


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PDF 64K/128K M48CS12/48C 48C512/1024 512/48C 48C1024
Samsung Capacitor sms

Abstract: No abstract text available
Text: 48C512- 7 KM48C51 2- 8 K M 4 8 C 5 12-10 KM 48C 512- 7 KM 48C 512- 8 KM 48C 512-10 KM48C51 2- 7 KM48C51 2 , repeated for each of the 1024 row address (A0-A9). CAS-before-RAS Refresh: The KM 48C512 has CASbefore-RAS , possible to refresh the K M 48C512 by using read, write or read-modify-write cycles. Whenever a row is , refresh is the preferred method. Fast Page Mode The KM 48C512 has Fast page mode capability provides


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PDF KM48C512 KM48C51 100ns 130ns 150ns 180ns 28-LEAD Samsung Capacitor sms
NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 Texas Instruments eprom 2732 814400
Text: 514260 416C256 45160 514260 512K x 8(4M) 424800 514800 48C512 514800 54800 41256


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PDF 71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 Texas Instruments eprom 2732 814400
01404

Abstract: SEEQ TECHNOLOGY 48C1024
Text: blocks in both the 48C512 and the 48C1024. A block, which is 512 bytes in th e 4 8 C 5 1 2 a n d 1 024 , algorithm. T- 4 6- 13 -2 7 Silicon Signature TM A row o f fixed ROM is present in the 48C512 and 48C1024


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PDF 64K/128K Rete8119233 M48C512/48C1024 D0Q14DS T-46-13-27 01404 SEEQ TECHNOLOGY 48C1024
41C1000

Abstract: 41C464 424170 NEC TC55B8128 CY70199 44C1000 TC5116100 HN62404P KM41C1000 TC511000
Text: MEM ORY ICs 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 CRO SS REFERENCE GUIDE M ode F. Page N ibble S. C o lu m n Sa m su n g KM 41C256 KM 41C257 KM 41C258 KM 41C464 KM 41C466 KM 41C1000 K M 41C 10 01 KM 41C1002 KM 44C256 KM 44C258 KM 41C4000 K M 41C 40 01 KM 41C4002 KM 44C1000 KM 44C1002 KM 48C512 KM 49C512 KM 416C256 KM 418C256 KM 41C16000 KM 44C4000 Toshiba TC 51256 TC 51257 TC 51258 TC51464 TC 51466 TC511000 TC511001 TC511002 T C 514256 TC 514258 T C 51 4100 TC514101


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PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 424170 NEC TC55B8128 CY70199 44C1000 TC5116100 HN62404P KM41C1000 TC511000
Not Available

Abstract: No abstract text available
Text: < 7 0 ° C , Vcc = 5.0V ± 1 0 % , See notes 1, 2) KM 48C512 /L/SL-7 KM48C512/USL-8 KM , « T a « 7 0 ° C , VCc = 5 .0 V ± 1 0 % , See notes 1,2) KM 48C512 /USL-7 KM48C512IUSU) KM


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PDF KM43C512/L/SL KM48C512/L/SL KM48C512/L/SL-7 130ns KM48C512/L/SL-8 150ns 100ns 180ns KM48C512/USL-10 28-LEAD
Not Available

Abstract: No abstract text available
Text: .0 V ± 1 0 % , See notes 1,2) K 48C M 512/U SL-7 Parameter Symbol KM 48C512 /L/SU K


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PDF KM48C512/L/SL KM48C512/L/SL KM48C512/L/SL-7 130ns KM48C512/USL-8 150ns KM48C512/USL-10 100ns 180ns 28-LEAD
Not Available

Abstract: No abstract text available
Text: a<70°C , Max [ Vcc = 5 .0 V ± 1 0 % , See notes 1, 2) KM 48C512 /USL7 Symbol , °C , V c c = 5 .0 V ± 1 0 % , See notes 1,2) KM 48C512IUSL7 Parameter Symbol KIM8C512/USI


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PDF KM48C512/L/SL 0D133bS KM48C512/L/SL KM48C512/USL-7 130ns KM48C512/L/SL-8 150ns 100ns 180ns KM48C512/L/SL-10
41C464

Abstract: 41C258 41C1000 44C256C
Text: . 528 K M 48C512LL.


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PDF KM41C256 KM424C256 424C256A. KM424C257 KM428C128 428C256. 41C464 41C258 41C1000 44C256C
Not Available

Abstract: No abstract text available
Text: Max Speed Units KM 48V512D KM 48C512D _ Don't care -5 -6 -7 70 65 85 70


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PDF KM48C512DT 512Kx8 16Mx4, 512Kx8) QD35421
Not Available

Abstract: No abstract text available
Text: notice. (C) 1996 Samsung Electronics Printed in Korea. Page: 9 (KM 48C512DJ ) 7=^4142 00353^1 , Samsung Electronics Printed in Korea. Page: 12 (KM 48C512DJ ) 7Tb4142 003S3T4 T44 KM48C5 , Samsung Electronics Printed in Korea. Page: 13 (KM 48C512DJ ) 7 ^ 4 1 4 2 □ Q 3 5 3 c15 , re CD-ROM(Edition 3.0) This Data Sheet is subject to change without notice. Page: 14 (KM 48C512DJ , without notice. (C) 1996 Samsung Electronics Printed in Korea. Page: 15 (KM 48C512DJ ) 7^ 4 142


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PDF KM48C5 512Kx8 16Mx4, 512Kx8) KM48C512DJ) KM48C512DJ 7Tb4142
23C1001

Abstract: KMM5334100 km 23c 4000B M681000 4100C 532512B 23c4001 KM428V256 KM68V257 KM681001-25
Text: 48C512BL-8 KM48C512BLL-5 KM48C512BLL-6 KM48C512BLL-7 KM48CS12BLL-8 KM48C514B-5 KM48C514B


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PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B M681000 4100C 532512B 23c4001 KM428V256 KM68V257 KM681001-25
Not Available

Abstract: No abstract text available
Text: C 0 0%, o s ,) 48C512AJAL /ALL-7 KM 48C512A /AUALL-8 KM8C512MUMLU KH Parameter Symbol Min , “C, Vcc = 5 .0 V ± 1 0 % , See notes 1, 2) Symbol 48C512A /AL/AIL-8 48CS12A/AL/ALL-7 KM KM


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PDF KM48C512A/AL/ALL 512Kx8 KM48C512A/AL/ALL KM48C512A/AUALL-6 110ns KM48C512A/AL/ALL-7 130ns KM48C512A/AL/ALL-8 150ns 28-LEAD
PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Text: ·KM48C512LTR ·KM48C512SLJ ·KM48C512SLZ KM48C512SLT KM48C512SLTR ·KM4BC512LLJ ·KM 48C512LLZ ·KM 48C512LLT


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PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001
KM23C1000-20

Abstract: KM28C64B KMCJ532512 KM718B90-12 KMM591000CN 30-pin simm memory "16m x 8" KM41C16000ALL KM48V2104AL SIMM 1Mx9 KM68V257-17
Text: -5 KM48C512BL-6 KM48C512BL-7 KM 48C512BL-8 KM48C512BLL-5 KM48C512BLL-6 KM48C512BLL


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PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM23C1000-20 KM28C64B KMCJ532512 KM718B90-12 KMM591000CN 30-pin simm memory "16m x 8" KM41C16000ALL KM48V2104AL SIMM 1Mx9 KM68V257-17
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