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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver

4814 mosfet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor BC 575

Abstract: 4814 mosfet mosfet 4813 CD 4814 4814 transistor 4814 AN569 diode P06A MTP12P10 P06A diode
Text: %. 4-814 Motorola TMOS Power MOSFET Transistor Device Data MTP12P10 TYPICAL ELECTRICAL CHARACTERISTICS o à , Temperature 4-814 Motorola TMOS Power MOSFET Transistor Device Data MTP12P10 SAFE OPERATING AREA INFORMATION , 1000 Figure 9. Thermal Response 4-814 Motorola TMOS Power MOSFET Transistor Device Data MTP12P10 Figure , Figure 12. Switching Test Circuit Figure 13. Switching Waveforms 4-814 Motorola TMOS Power MOSFET , ~"worst casa" design. ■■- REV 1 Motorola TMOS Power MOSFET Transistor Device Data 4-813 MTP12P10


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PDF MTP12P10 21A-06, O-220AB transistor BC 575 4814 mosfet mosfet 4813 CD 4814 4814 transistor 4814 AN569 diode P06A P06A diode
2008 - 4814 mosfet chip

Abstract: TLE7183F TLE183F CB 4814 TLE7183SCD2 Tle7183 circuit diagram of single phase water pump gps09181 TLE7183SCD1 GL24-1
Text: Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOSFET , MOSFETs Separate input for each MOSFET PWM frequency up to 30kHz Fulfils specification down to 5.5V , with TTL characteristics Separate source connection for each MOSFET Integrated minimum dead time , Qualified VQFN- 48-14 Description The TLE7183F is a driver IC dedicated to control the 6 to 12 , Vpower net. Type Options Package Marking TLE7183F SCD1 VQFN- 48-14 TLE7183SCD1


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PDF TLE7183F 4814 mosfet chip TLE7183F TLE183F CB 4814 TLE7183SCD2 Tle7183 circuit diagram of single phase water pump gps09181 TLE7183SCD1 GL24-1
2002 - Not Available

Abstract: No abstract text available
Text: Pomona ® Model 4814 Cable Assembly, Microwave, SMA (Male) Right Angle To SMA (Male) CABLE TYPES RG 174/U Black 4814 -K-XX 30.8 50 .45 dB/ft @ 1.0 GHz Max +85ºC. (+185ºF.) Max. RG 316/U Tinted Brown 4814 -BB-XX 29.0 50 .56 dB/ft @ 3 GHz Max. +200ºC. (+392ºF.) Max. RG 142B/U Tinted Brown 4814 , Block Marking: "Pomona 4814 -X-XX RATINGS: Operating Voltage: 335 VRMS Max. ORDERING INFORMATION: Model 4814 -X-XX X=Cable Type (see table) XX = Cable Lengths, Standard Lengths: 4" (102), 8" (203), 12" (305


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PDF 174/U 4814-K-XX 316/U 4814-BB-XX 142B/U 4814-X-XX Type03) 4814-K-24
1999 - active harmonic filter

Abstract: ic 4814 TDA4814 TDA4814A 4814 Q67000-A8163 TDA-4814
Text: endangered. Power Factor Controller TDA 4814 IC for High Power Factor and Active Harmonic Filter , q q q Type s TDA 4814 A P-DIP-14-1 Ordering Code Package Q67000-A8163 P-DIP-14-1 s Not for new design Version 2.0 3 1 Jun 1996 TDA 4814 TDA 4814 A Pin , Jun 1996 TDA 4814 The TDA 4814 A contains all functions for designing electronic ballasts and , TDA 4814 A in a P-DIP-14-1 package. Block Diagram Version 2.0 5 1 Jun 1996 TDA 4814


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PDF TDA4814 D-81541 active harmonic filter ic 4814 TDA4814 TDA4814A 4814 Q67000-A8163 TDA-4814
IC 4816 PIN DIAGRAM

Abstract: tda 4816 TDA 4816 A smd 4816 TDA4816G TDA 4816 g smd 4814 electronic ballast for multiplier fluorescent lam 4814
Text: -14-1 P-DSO-16-1 Type IS TDA 4814 A S TDA 4816 G O rdering Code Q 67000-A8163 Q67000-A8290 Package , TDA 4814 A GND Q 1 Q S IP [ 2 3 - I C0M P[ U I Op A m p /l^ F £ S I START [ N.C. [ 6 7 u H ] I DET , 161 SIEM ENS TDA 4814 TDA 4816 T he TD A 4814 A and TD A 4816 G contain all fu n ction s for , the TDA 4816 G the features of the TDA 4814 A have been extended. The m ultiplier output was bonded , ground (GND QSIP) is im plemented. The TDA 4816 G comes in a P-DSO-16 package, the TDA 4814 A in a P-DIP


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PDF TDA4814 TDA4816 P-DIP-14-1 P-DSO-16-1 67000-A8163 Q67000-A8290 P-DIP-14-1 IC 4816 PIN DIAGRAM tda 4816 TDA 4816 A smd 4816 TDA4816G TDA 4816 g smd 4814 electronic ballast for multiplier fluorescent lam 4814
2000 - 4814b

Abstract: No abstract text available
Text: Pomona ® Model 4814 Cable Assembly, Microwave, SMA (Male) Right Angle To SMA (Male) CABLE TYPES RG 174/U Black 4814 -K-XX 30.8 50 .45 dB/ft @ 1.0 GHz Max +85ºC. (+185ºF.) Max. RG 316/U Tinted Brown 4814 -BB-XX 29.0 50 .56 dB/ft @ 3 GHz Max. +200ºC. (+392ºF.) Max. RG 142B/U Tinted Brown 4814 , Block Marking: "Pomona 4814 -X-XX RATINGS: Operating Voltage: 335 VRMS Max. ORDERING INFORMATION: Model 4814 -X-XX X=Cable Type (see table) XX = Cable Lengths, Standard Lengths: 4" (102), 8" (203), 12" (305


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PDF 174/U 4814-K-XX 316/U 4814-BB-XX 142B/U 4814-X-XX 4814-K-24 00\D4814 4814b
1996 - IC 4816 PIN DIAGRAM

Abstract: TDA 4816 A smps control ic with 6 pin sip smd 4816 tda 4816 TDA 4814 A 8 PIN SMD IC FOR SMPS AIR FLOW DETECTOR CIRCUIT DIAGRAM 4817 6 PIN SMD IC FOR SMPS
Text: Power Factor Controller TDA 4814 TDA 4816 IC for High Power Factor and Active Harmonic , q q q q P-DIP-14-1 P-DSO-16-2 Type Ordering Code Package TDA 4814 A , 09.94 TDA 4814 TDA 4816 TDA 4814 A TDA 4816 G Pin Configurations (top view) Pin , 4814 TDA 4816 The TDA 4814 A and TDA 4816 G contain all functions for designing electronic ballasts , concentrated on one line supply point. With the TDA 4816 G the features of the TDA 4814 A have been extended


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PDF P-DIP-14-1 P-DSO-16-2 Q67000-A8163 Q67000-A8290 IC 4816 PIN DIAGRAM TDA 4816 A smps control ic with 6 pin sip smd 4816 tda 4816 TDA 4814 A 8 PIN SMD IC FOR SMPS AIR FLOW DETECTOR CIRCUIT DIAGRAM 4817 6 PIN SMD IC FOR SMPS
1996 - 4814 transistor

Abstract: 4814 charge TDA-4814 ic 4814 dip 4814 active harmonic filter Q67000-A8163 P-DIP-14-1 4814A 4814
Text: Power Factor Controller TDA 4814 IC for High Power Factor and Active Harmonic Filter , q q q Type s TDA 4814 A P-DIP-14-1 Ordering Code Package Q67000-A8163 P-DIP-14-1 s Not for new design Semiconductor Group 1 01.96 TDA 4814 TDA 4814 A Pin , 2 TDA 4814 The TDA 4814 A contains all functions for designing electronic ballasts and , TDA 4814 A in a P-DIP-14-1 package. Block Diagram Semiconductor Group 3 TDA 4814


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PDF P-DIP-14-1 Q67000-A8163 4814 transistor 4814 charge TDA-4814 ic 4814 dip 4814 active harmonic filter Q67000-A8163 P-DIP-14-1 4814A 4814
active harmonic filter

Abstract: No abstract text available
Text: Group 1 01.96 SIEM ENS TD A 4814 TD A 4814 A I_I GND Q 1 QSIP Q 2 3 - I COMP Q 4 + I , multiplier input M2 Detector input Semiconductor Group 2 SIEM ENS TD A 4814 The TDA 4814 A , that a separate driver ground (GND QSIP) is implemented. The TDA 4814 A in a P-DIP-14-1 package. Block Diagram Semiconductor Group 3 SIEM ENS Circuit Description TD A 4814 This device , of them is available, from the start circuit designed as a pulse generator in the TDA 4814 . The


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PDF TDA4814 TDA4814 Q67000-A8163 P-DIP-14-1 active harmonic filter
TDA4816

Abstract: TDA4816G ic 4814 4816g IC 4816 PIN DIAGRAM tda 4816
Text: -14-1 P-DSO-16-1 Type S TDA 4814 A H TDA 4816 G O rdering Code Q67000-A8163 Q67000-A8290 Package , The TDA 4814 A and TDA 4816 G contain all functions for designing electronic ballasts and , concentrated on one line supply point. With the TDA 4816 G the features of the TDA 4814 A have been extended , -16 package, the TDA 4814 A in a P-DIP-14 package. G N D Q S I P 11 Q S IP - I COM P (1 M M C 0 M , 4814 TD A 4816 This device has a conditioning circuit for the internal power supply. It allows


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PDF TDA4814 TDA4816 P-DIP-14-1 P-DSO-16-1 Q67000-A8163 Q67000-A8290 P-DIP-14-1 TMA4814 4816G TDA4816 TDA4816G ic 4814 4816g IC 4816 PIN DIAGRAM tda 4816
2014 - MB655045

Abstract: No abstract text available
Text: 65.00 [2.56] 2.00 [.08] 1.49 [.06] D 45.00 [1.77] 39.00 [1.54] INSIDE HEIGHT 58.48 [2.30] INSIDE LENGTH 3.00 [.12] WALL THICKNESS DETAIL D GROOVE SECTION A-A SIDE VIEW M2.9X14mm SELF-TAPPING SCREW 20.75 [.82] SECTION B-B END VIEW 48.14 [1.90] B 39.57 [1.56] 39.81 [1.57] A A 33.14 [1.30] 43.47 [1.71] INSIDE WIDTH 49.67 [1.96] B 8.75 [.34] 8.43 [.33] 48.14 [1.90] 48.14 [1.90] 32.14 [1.27] Enclosures can


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PDF 9X14mm MB6550 MB6550 MB655045 MB655045
1998 - mosfet K 2865

Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
Text: MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET , package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching , Product specification N-channel single gate MOSFET THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1 , specification N-channel single gate MOSFET BF1107 handbook, halfpage 2 S 0 MBK831 21(on) (dB


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PDF M3D088 BF1107 BF1107 SCA60 115102/00/02/pp8 mosfet K 2865 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
1996 - Dual-Gate Mosfet

Abstract: PHILIPS MOSFET MARKING fet MARKING g2 FET marking code fet dual gate sot143 2.F 1 marking dual-gate n channel depletion MOSFET bs 306 philips mosfet
Text: föregående meddelande ELFA artikelnr. 71-306-85 BF990A trans MOSFET SOT143 Antal sidor: 09 DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File , N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION · Protected against excessive input , 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A , MOS-FET BF990A STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER


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PDF BF990A OT143 BF990A SCA52 117061/00/02/pp8 Dual-Gate Mosfet PHILIPS MOSFET MARKING fet MARKING g2 FET marking code fet dual gate sot143 2.F 1 marking dual-gate n channel depletion MOSFET bs 306 philips mosfet
2014 - MB655030

Abstract: No abstract text available
Text: 65.00 [2.56] 3.00 [.12] WALL THICKNESS 24.00 [.94] INSIDE HEIGHT 2.00 [.08] 30.00 [1.18] D 1.51 [.06] 58.74 [2.31] INSIDE LENGTH DETAIL D GROOVE SECTION A-A SIDE VIEW M2.9X14mm SELF-TAPPING SCREW 8.75 [.34] SECTION B-B END VIEW 48.14 [1.90] B 39.81 [1.57] 39.57 [1.56] A A 33.14 [1.30] 43.74 [1.72] INSIDE WIDTH 50.00 [1.97] B 20.75 [.82] 8.43 [.33] 48.14 [1.90] 48.14 [1.90] 32.14 [1.27] Enclosures can be


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PDF 9X14mm MB6550 MB6550 MB655030 MB655030
1998 - PHILIPS MOSFET MARKING

Abstract: passive loopthrough n channel depletion MOSFET mosfet K 2865 mosfet 5130 Q 817 marking code 10 sot23 BP317 MSB003 BF1107
Text: gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET FEATURES , field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET , Semiconductors Preliminary specification Silicon N-channel single gate MOSFET BF1107 THERMAL , MOSFET 40 Ptot (mW) 30 20 10 0 0 40 80 120 160 TS (°C) Fig.2 Power


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PDF M3D088 BF1107 SCA59 115102/00/01/pp8 PHILIPS MOSFET MARKING passive loopthrough n channel depletion MOSFET mosfet K 2865 mosfet 5130 Q 817 marking code 10 sot23 BP317 MSB003 BF1107
2002 - 6g8g

Abstract: No abstract text available
Text: 4814 1-G8-G Green Products 1-G8-G 50 to 1000 Volts 3.0 Amperes !" "%,+-'. / 0'1)2 3+%.%'+0%+%00' .4,+ 3+%0.*+*' 3+% *'+*' $ 5 ' (6#$"71($ 8'+% $(7(6,+8'' Green Products in Compliance with the RoHS Directive 1.0 (25.4) MIN. 0.220(5.6) 0.197 , & '(&)*+,-.& ./0·12&%# %3& ./0· 4814 1-G8-G Green Products , ,-.& ./0·12&%# %3& ./0· SENSITRON SEMICONDUCTOR Data Sheet 4814 , Rev. ­


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1996 - BF990A

Abstract: PHILIPS MOSFET MARKING 4814 mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification , specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION · Protected against , ; VG2-S = 4 V 2 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET , N-channel dual-gate MOS-FET BF990A STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified , specification N-channel dual-gate MOS-FET BF990A PACKAGE OUTLINE handbook, full pagewidth 0.75


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PDF BF990A OT143 SCA52 117061/00/02/pp8 BF990A PHILIPS MOSFET MARKING 4814 mosfet dual-gate
1996 - BF989

Abstract: MOSFET 4466 BP317 SCA52 dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification , specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION · Protected against , Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 LIMITING VALUES , Product specification N-channel dual-gate MOS-FET BF989 STATIC CHARACTERISTICS Tj = 25 °C unless , specification N-channel dual-gate MOS-FET BF989 PACKAGE OUTLINE handbook, full pagewidth 3.0 2.8


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PDF BF989 OT143 SCA52 117061/00/02/pp8 BF989 MOSFET 4466 BP317 SCA52 dual-gate
CD 4814

Abstract: cd 5890 cd cd 5890 54243 S/TDA 4620
Text: 459 8 5- 4 3 83 PCB THK 37.98 40.52 43.06 45.60 48.14 50.68 53.22 55.76 37.98 40.52 43.06 45.60 48.14 50.68 53.22 55.76 37.98 40.52 43.06 45.60 48.14 50.68 53.22 55.76 2.90 1.57 3.90 2.36 4.50 3.18 , 40.52 43.06 45.60 48.14 50.68 53.22 55.76 37.98 40.52 43.06 45.60 48.14 50.68 53.22 55.76 37.98 40.52 43.06 45.60 48.14 50.68 53.22 55.76 2.90 1.57 3.90 2.36 4.50 3.18 GUIDE & MOUNTING PEG O PTIO NS


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PDF UL94V-0, 6-U-05 SD-45985-400_ CD 4814 cd 5890 cd cd 5890 54243 S/TDA 4620
2002 - Not Available

Abstract: No abstract text available
Text: Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 50 50 80 38 4814 1324 842 300 321 98 , parallel with PowerTrench MOSFET . This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET . Figure 12 shows the reverse recovery characteristic of the , equivalent size MOSFET produced without SyncFET(FDS6676). Additional SyncFET Characteristics 34 V DS


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PDF FDQ7698S SO-14 FDQ7698S SO-14
2013 - Not Available

Abstract: No abstract text available
Text: FAB105-V1 or FAB205 0° ~ 40°C (32°F ~ 104°F) 481.4 mm (18.95") (W) x 450 mm (17.7") (D) x 88.9 mm (3.5") (H)(AX61222TP) 481.4 mm (18.95") (W) x 475 mm (18.7") (D) x 88.9 mm (3.5") (H)(AX61220TP) 8.22 kg


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PDF AX61222TP/AX61220TP AX61222TP AX61220TP) ATX6022/6VP4 ATX6022/6VP4 FAB105-V1 FAB205 FAB210 AX61222TP
1999 - Not Available

Abstract: No abstract text available
Text: 4354 4391 4391 4814 4814 B F F U O O O G I C O Q G H I I L L 10.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0


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PDF -30oC 125oC.
1997 - BB405

Abstract: BF998WR 4814 mosfet dual-gate MGC480
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product , Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES , N-channel dual-gate MOS-FET BF998WR LIMITING VALUES In accordance with the Absolute Maximum Rating , specification N-channel dual-gate MOS-FET BF998WR THERMAL CHARACTERISTICS SYMBOL PARAMETER , Product specification N-channel dual-gate MOS-FET BF998WR MGC470 MGC471 24 24 3V V G2


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PDF BF998WR SCA55 117067/00/02/pp12 BB405 BF998WR 4814 mosfet dual-gate MGC480
1997 - mosfet K 2865

Abstract: 4814 mosfet BF909WR dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product , Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES , in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with , specification N-channel dual-gate MOS-FET BF909WR LIMITING VALUES In accordance with the Absolute , Product specification N-channel dual-gate MOS-FET BF909WR THERMAL CHARACTERISTICS SYMBOL


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PDF BF909WR SCA55 117067/00/02/pp12 mosfet K 2865 4814 mosfet BF909WR dual-gate
1999 - NTC thermistor 9.5mm

Abstract: betatherm 145 15 k NTC Betatherm Betatherm 5K l30K
Text: +/-3% 150000 +/-3% 3720 3970 4087 4200 4354 4391 4391 4814 4814 C O Q G H I I , 3599 3720 3970 4200 4354 4391 4814 3970 4087 3325 3450 4096 25/85


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PDF compen081 NTC thermistor 9.5mm betatherm 145 15 k NTC Betatherm Betatherm 5K l30K
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