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Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158IN Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1336CN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver

48 13nhg mosfet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - 13nhg

Abstract: 48 13nhg mosfet 4813nhg 48 13nhg 4813NH 369D NTD4813NH 13nhg mosfet
Text: DIAGRAMS & PIN ASSIGNMENTS YWW 48 13NHG TA = 85°C TA = 25°C Pulsed Drain Current 4 4 YWW 48 13NHG Steady State 7.0 YWW 48 13NHG Power Dissipation RqJA (Note 2) TA = , NTD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features ·Low RDS(on) to Minimize Conduction Losses ·Low Capacitance to Minimize Driver Losses ·Optimized Gate Charge to Minimize , Dissipation RqJA (Note 1) TA = 25°C PD 1.94 TA = 25°C ID 7.6 S N-CHANNEL MOSFET W


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PDF NTD4813NH 25aws NTD4813NH/D 13nhg 48 13nhg mosfet 4813nhg 48 13nhg 4813NH 369D NTD4813NH 13nhg mosfet
2006 - 13nhg

Abstract: 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G
Text: ) MARKING DIAGRAMS & PIN ASSIGNMENTS YWW 48 13NHG TA = 85°C TA = 25°C Pulsed Drain Current 4 4 YWW 48 13NHG Steady State 7.0 YWW 48 13NHG Power Dissipation RqJA (Note , NTD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features · · · · · Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate , N-CHANNEL MOSFET W Continuous Drain Current RqJA (Note 2) G A 4 1 2 5.9 1 3 PD


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PDF NTD4813NH NTD4813NH/D 13nhg 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G
2010 - 13nhg

Abstract: 48 13nhg 48 13nhg mosfet 4813NH 4813nhg NTD4813NH-1G 369D NTD4813NH
Text: ASSIGNMENTS 4 Drain 4 Drain YWW 48 13NHG Steady State 7.0 YWW 48 13NHG Power Dissipation RJA (Note 2) TA = 85°C 4 Drain YWW 48 13NHG Continuous Drain Current RJA (Note 1 , NTD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features · · · · · Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate , N-CHANNEL MOSFET A TA = 85°C 4 1 2 5.9 TA = 25°C PD 1.27 W Continuous Drain


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PDF NTD4813NH NTD4813NH/D 13nhg 48 13nhg 48 13nhg mosfet 4813NH 4813nhg NTD4813NH-1G 369D NTD4813NH
2011 - Not Available

Abstract: No abstract text available
Text: Source dV/dt MARKING DIAGRAM & PIN ASSIGNMENT YWW 48 13NHG Power Dissipation RqJA (Note 2 , NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable , Continuous Drain Current RqJA (Note 2) TA = 25°C ID 7.6 S N−CHANNEL MOSFET A Steady


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PDF NTD4813NH, NVD4813NH NTD4813NH/D
2011 - 4813NH

Abstract: 13nhg 48 13nhg NVD4813NH 48 13nhg mosfet
Text: 29 6 44.4 W A A °C A V/ns mJ W A W A Unit V V A G S N-CHANNEL MOSFET 4 1 2 3 DPAK CASE 369AA (Bent Lead) STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain YWW 48 13NHG 2 1 Drain 3 Gate , NTD4813NH, NVD4813NH Power MOSFET Features 30 V, 40 A, Single N-Channel, DPAK/IPAK · · · · · · Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC-Q101 Qualified and PPAP Capable - NVD4813NH These Devices


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PDF NTD4813NH, NVD4813NH AEC-Q101 NTD4813NH/D 4813NH 13nhg 48 13nhg 48 13nhg mosfet
2014 - Not Available

Abstract: No abstract text available
Text: Industries, LLC, 2014 September, 2014 − Rev. 4 4 Drain AYWW 48 13NHG Power Dissipation RqJA , NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable


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PDF NTD4813NH, NVD4813NH NTD4813NH/D
2009 - IRF540NS

Abstract: 1423C 15-V IRF1324 AN75-16 TPS2490 SR-332 SMAJ60A BZX84C7V5 SLVC033
Text: with the TPS2490, the power supply is 48 V. Therefore, the MOSFET needs a Vds or Vdss rating of at , short, the MOSFET receives nearly the entire 48 -V supply voltage from drain-to-source. Looking at the , to control start-up inrush and fault currents. During these transient events, the MOSFET dissipates power greater than steady-state and can well exceed the thermal limits of the MOSFET . These factors require consideration when selecting the MOSFET . This application report describes the steps required to


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PDF SLVA379 IRF540NS 1423C 15-V IRF1324 AN75-16 TPS2490 SR-332 SMAJ60A BZX84C7V5 SLVC033
2005 - mosfet MTBF

Abstract: IC SEM 2005 Metglas mosfet dc switch POWER MOSFET APPLICATION NOTE mosfet LM2748 Dc to DC mosfet application note LM5025 2748 dc
Text: LM2745/ 48 LM2745/2748 ± 1.5% 0.6V IC 3V 6V 14V MOSFET IC N MOSFET IC LM2745/2748 , ) Tektronix Figure 2 : power.national.com/jpn 3 LM2745/ 48 FPGAASIC Point-of-Load LM2745/ 48 Input power 50kHz2MHz 1V to 16V 3V to 6V (Bias) VCC ON SD OFF LM2745 , Figure 3 : 1 MOSFET MOSFET IC Metglas Magnetics FET Micrometals (www.micrometals.com) MOSFET ( Micrometal 200C ) 1 () IC


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PDF LM5115 LM5025 13V100V 5V30V 75V12V LM5115 550263-007-JP mosfet MTBF IC SEM 2005 Metglas mosfet dc switch POWER MOSFET APPLICATION NOTE mosfet LM2748 Dc to DC mosfet application note LM5025 2748 dc
2008 - DAP 07

Abstract: LM3404 D01813H solar 4V led buck solar shunt regulator solar array shunt regulator SI1539DL 443E-07 LM3402 Coilcraft D01813H
Text: pin, where it is compared against a 200 mV reference (VREF). A comparator turns on the power MOSFET when VSNS falls below VREF. The power MOSFET conducts for a controlled on-time, tON, set by an external , FIGURE 5. ISENSE Current Waveform Standard On-Time Set Calculation The control MOSFET on-time is , the conclusion of tON the control MOSFET turns off for a minimum OFF time (tOFF-MIN) of 300 ns, and , time that the current sense comparator trips to the time at which the control MOSFET actually turns on


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PDF LM3402/02HV LM3404/04HV LM3402/02HV) LM3404/04HV) LM3402 LM3404 AN-1839 DAP 07 D01813H solar 4V led buck solar shunt regulator solar array shunt regulator SI1539DL 443E-07 Coilcraft D01813H
HG62G

Abstract: hg62g051 HG71G154 HG62G019 HG71G HG71G063 HG71G030 HG62g014 HG62G035 HG51B
Text: Efficiency Part Number Standard (W) (V) (·/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2 PF0030 AMPS 6.0 40% MOSFET 12.5 PF0031 NMT900 6.0 12.5 40% MOSFET PF0032 E-TACS 40% MOSFET 6.0 12.5 PF0040 AMPS 6.0 12.5 40% MOSFET MOSFET PF0042 E-TACS 6.0 12.5 40% MOSFET - PF0045A AMPS 1.2 4.8 56% GSM 38% MOSFET PF0120 12.0 12.5 GSM 38 , MOSFET PF0047A E-TACS 1.4 4.8 68% E Package Type B2 B3 G · · · · · · · · · SAW Filters Part


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PDF PF0025 PF0026 NMT900, PF0027 PF0030 PF0031 NMT900 PF0032 PF0040 PF0042 HG62G hg62g051 HG71G154 HG62G019 HG71G HG71G063 HG71G030 HG62g014 HG62G035 HG51B
2007 - ISL6332

Abstract: ISL6262 Application Notes isl6262 QFN-48 footprint isl6260 sis630 i845G isl6251 PWM Controller VID 200-12
Text: converters Multiphase controllers with integrated MOSFET drivers Digital multiphase: precise power World-class MOSFET drivers Peripheral power, ACPI and DDR memory and solutions Stand-alone and embedded , .1 QFN- 48 ISL6334* 4-Phase VR11.1 PWM Controller Capable of Precision DCR Differential Current , * 3 Phase VR11.1 Buck PWM Controller with Integrated MOSFET Drivers with Light Load Efficiency 3 12 0.375 1.6 >75 5 VR11.1 QFN- 48 ISL6332* 2 Phase VR11.1 Buck PWM Controller


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PDF ISL6262A: ISL6263A: 1-888-INTERSIL LC-060 ISL6332 ISL6262 Application Notes isl6262 QFN-48 footprint isl6260 sis630 i845G isl6251 PWM Controller VID 200-12
vfd schematics

Abstract: vfd circuit diagram vfd schematic diagram vfd CONTROL circuit diagram SUC75N04-04T vfd -driver LMV321 VJ0805Y104JXA SUB60N04-15LT CRCW08052202F
Text: . VOUT = 4.8 V. This is the logic level gate drive to turn on the MOSFET . Document Number: 71621 13 , AN820 Vishay Siliconix Temperature Sensing Power MOSFET Kandarp Pandya INTRODUCTION Vishay , temperature. This voltage is then fed into circuitry allowing the MOSFET to shut off power to the , MOSFETs integrate an electrically isolated poly-silicon diode on the same die as the MOSFET (Figure 1). Because the MOSFET and the diode are so close together, the diode temperature tracks the MOSFET


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PDF AN820 VJ0805Y104JXAA SUB60N04-15LT LMV321M5 SC70-5 SUB50N04-07LT SUB50P05-13LT SUC75N04-04T 13-Jul-01 vfd schematics vfd circuit diagram vfd schematic diagram vfd CONTROL circuit diagram SUC75N04-04T vfd -driver LMV321 VJ0805Y104JXA SUB60N04-15LT CRCW08052202F
2003 - sso8 package

Abstract: MOSFET P SOT-23 BUZ350 SOT323 MOSFET P BS0615NV tda 2850 BUZ345 buz341 BSS138N n-channel 250V power mosfet smd
Text: constantly shrinking in size, increasing the power density. WE CAN HELP you out. Our OptiMOS®2 power MOSFET , Integrated switch = Gate driver + power MOSFETs High-speed MOSFET driver in single & dual version Used , N - C h a n n e l 55 V (OptiMOS ®) RDS(on) max. [m] @ VGS = 10 V VGS(th) [V] 4.7 5.0 4.8 , Product Description Voltage Class Page P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -30V 12 P-Channel MOSFET -20V 12


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PDF B152-H8203-X-X-7600 sso8 package MOSFET P SOT-23 BUZ350 SOT323 MOSFET P BS0615NV tda 2850 BUZ345 buz341 BSS138N n-channel 250V power mosfet smd
Not Available

Abstract: No abstract text available
Text: ï 8 DRMMNQ REVI8ION8 REV 48 -WAY HEADER ASSEMBLY WITH OUT FERRITE FILTERS i X J , REFORMATTED DRAWING PCB LAYOUTS REDRAWN WITH ADDITIONAL KEEP OUT AREAS 48 -WAY HEADER ASSEMBLY WITH , P/N: 581 01 48 007 APP ECN: 05A468 ADDED LEGS AND ADDED SLOTS TO RIBS P/N: 581 01 48 005 , : RECOMMENDED IS LOCTITE 383. 6. MOSFET SPRING PLATES ARE SOLD SEPARATLY (FOR INSTALLATION REFER TO ENCLOSURE , Cinch 48 -WAY HEADERS 1700 FIN LEY R D LO M BARD, IL 60148 PR0/E ENGLISH inches DRAWN BY


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PDF 48-WAY 06A408 06A635 05A468 T0-220 51180S
usbest

Abstract: UT313-L4 cf card diagram UT313 48-pin assignments USBest Technology cf card reader
Text: . 4 3.1 UT313 48 -pin assignments , . 5 4.1 UT313 48 -pin descriptions , . ! 5.3 Power MOSFET Characteristics , . 10 6.1 UT313-L4 48 -pin LQFP Outline , .4 Figure 5-1 Power MOSFET I-V curve (For CF


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PDF UT313-L4 UT313 VDD33 UT313-L4 48-pin UT313-LF usbest cf card diagram UT313 48-pin assignments USBest Technology cf card reader
2008 - TRANSISTOR SMD CODE PACKAGE SOT89 52 10A

Abstract: smd code marking NEC 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Text: -0.25 0.35 ID(DC) (A) µPA2800T1L N µPA502T -50 Complementary MOSFET Schottky , µPA2780GR µPA2781GR 11 MOSFET Schottky Diode µPA2782GR N 5 6 10 7 5.5 5 , 30 8 11.3 8.9 4.5V µPA1930TE Single Dual MOSFET Schottky Diode , Dual Single -20 P µPA2650T1E µPA2610T1C 24 3 MOSFET Schottky Diode 20 , 86 24.5 13 16 26 32 27 16 16 12.5 16 22 8.8 28 48 95


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PDF G18756EU3V0SG00 TRANSISTOR SMD CODE PACKAGE SOT89 52 10A smd code marking NEC 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
2013 - Not Available

Abstract: No abstract text available
Text: PSMN4R8-100BSE 12 April 2013 D2 PA K N-channel 100 V 4.8 m standard level MOSFET in D2PAK , product NXP Semiconductors PSMN4R8-100BSE N-channel 100 V 4.8 m standard level MOSFET in D2PAK , Semiconductors PSMN4R8-100BSE N-channel 100 V 4.8 m standard level MOSFET in D2PAK Symbol ID Parameter , -100BSE N-channel 100 V 4.8 m standard level MOSFET in D2PAK IAL (A) 103 003aaj965 102 (1) (2 , Semiconductors PSMN4R8-100BSE N-channel 100 V 4.8 m standard level MOSFET in D2PAK 1 Zth(j-mb) (K/W) 10


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PDF PSMN4R8-100BSE PSMN4R8-100BSE
2003 - 10MV1200AX

Abstract: MAX8546EUB MAX8548 MAX1967 MAX8545 MAX8545EUB MAX8546 35MV470AX
Text: Current-Sense Resistor o All N-Channel MOSFET Design o Adaptive Gate Drivers Eliminate Shoot-Through o , MOSFET . The MAX8545 and MAX8548 have a current-limit threshold of 320mV, while the MAX8546 has a , Voltage (Across Low-Side MOSFET ) When Output is Short 70 108 15 LX to GND, MAX8545, MAX8548 , (Across Low-Side MOSFET ) V 160 µS 1 2 µA 46 100 µA -185 -165 -140 , -38 -22 mV mV MOSFET DRIVERS Break-Before-Make Time Rising edge, DH going low to DL


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PDF 300kHz MAX8545/MAX8546) 100kHz MAX8548) MAX1967 MAX8545EUB MAX8546EUB 10MV1200AX MAX8546EUB MAX8548 MAX1967 MAX8545 MAX8545EUB MAX8546 35MV470AX
2008 - 48v to 13.8v buck

Abstract: Coilcraft D01813H LM3404 constant current buck regulator 8 pin LM3404 LM3402 D01813H 577ns ZETEX ZXM2A01E6CT SI1539DL D01813H-333
Text: pin, where it is compared against a 200 mV reference (VREF). A comparator turns on the power MOSFET when VSNS falls below VREF. The power MOSFET conducts for a controlled on-time, tON, set by an external , FIGURE 5. ISENSE Current Waveform Standard On-Time Set Calculation The control MOSFET on-time is , the conclusion of tON the control MOSFET turns off for a minimum OFF time (tOFF-MIN) of 300 ns, and , time that the current sense comparator trips to the time at which the control MOSFET actually turns on


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PDF LM3402/02HV LM3404/04HV LM3402/02HV) LM3404/04HV) LM3402 LM3404 AN-1839 48v to 13.8v buck Coilcraft D01813H LM3404 constant current buck regulator 8 pin D01813H 577ns ZETEX ZXM2A01E6CT SI1539DL D01813H-333
2006 - cs 740 mosfet

Abstract: b330adic irlm2502 MOSFET IRF 708 5211P MCP1653 C0402-1 MCP1652 MCP1651 MCP1650
Text: MOSFET MCP1650/51/52/53 / 8 7 6 5 VIN NC NC SHDN EXT GND CS FB , µH MOSFET / VOUT = 12V IOUT = 0 100 mA 90.9 k COUT 10 µF 10 k DS21876A_JP-page , (mV) (kHz) TJ = +125°C 740 TJ = - 40°C 700 3 3.3 3.6 3.9 4.2 4.5 4.8 , 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 2 6.0 2.5 3 3.5 , 50 65 80 95 110 125 2.7 (°C) 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1


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PDF MCP1650/51/52/53 MCP1650/ MCP1652 MCP1651 cs 740 mosfet b330adic irlm2502 MOSFET IRF 708 5211P MCP1653 C0402-1 MCP1652 MCP1651 MCP1650
2011 - NXP SMD diode MARKING CODE

Abstract: No abstract text available
Text: SO T2 3 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 - 5 April 2011 Product data , Semiconductors 30 V, 4.8 A N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information , PMV20XN NXP Semiconductors 30 V, 4.8 A N-channel Trench MOSFET 5. Limiting values Table 5 , Semiconductors 30 V, 4.8 A N-channel Trench MOSFET 017aaa176 102 ID (A) Limit RDSon = VDS/ID 10 , 16 PMV20XN NXP Semiconductors 30 V, 4.8 A N-channel Trench MOSFET 017aaa177 103 Zth


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PDF PMV20XN O-236AB) NXP SMD diode MARKING CODE
2013 - 74E860

Abstract: No abstract text available
Text: LF BUK7Y4R8-60E 7 May 2013 PA K 56 N-channel 60 V, 4.8 m standard level MOSFET in , NXP Semiconductors BUK7Y4R8-60E N-channel 60 V, 4.8 m standard level MOSFET in LFPAK56 Symbol , 4 / 13 NXP Semiconductors BUK7Y4R8-60E N-channel 60 V, 4.8 m standard level MOSFET in , -60E N-channel 60 V, 4.8 m standard level MOSFET in LFPAK56 2.4 a 003aaj815 VDS ID 1.6 VGS(pl) VGS , May 2013 8 / 13 NXP Semiconductors BUK7Y4R8-60E N-channel 60 V, 4.8 m standard level MOSFET


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PDF BUK7Y4R8-60E LFPAK56 74E860
2013 - Not Available

Abstract: No abstract text available
Text: LF BUK9Y4R8-60E 8 May 2013 PA K 56 N-channel 60 V, 4.8 m logic level MOSFET in LFPAK56 , -60E N-channel 60 V, 4.8 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pin 1 2 3 4 mb , 4 / 13 NXP Semiconductors BUK9Y4R8-60E N-channel 60 V, 4.8 m logic level MOSFET in LFPAK56 , -60E N-channel 60 V, 4.8 m logic level MOSFET in LFPAK56 Symbol QGD Ciss Coss Crss td(on) tr td(off) tf VSD , Semiconductors BUK9Y4R8-60E N-channel 60 V, 4.8 m logic level MOSFET in LFPAK56 240 ID (A) 160


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PDF BUK9Y4R8-60E LFPAK56
2007 - MAX1967

Abstract: MAX8545 MAX8545EUB MAX8546 MAX8546EUB MAX8548 MAX8548EUB capacitors 0.1uf 63v kemet make 10MV1200AX
Text: short-circuit and current-limit protection is provided by monitoring the RDS(ON) of the low-side MOSFET . The , MOSFET Design Adaptive Gate Drivers Eliminate Shoot-Through Lossless Overcurrent and Short-Circuit , Voltage (Across Low-Side MOSFET ) When Output is Short 70 108 15 LX to GND, MAX8545, MAX8548 , (Across Low-Side MOSFET ) V 160 µS 1 2 µA 46 100 µA -185 -165 -140 , -38 -22 mV mV MOSFET DRIVERS Break-Before-Make Time Rising edge, DH going low to DL


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PDF MAX8545/MAX8546/MAX8548 MAX1967 MAX8545 MAX8545EUB MAX8546 MAX8546EUB MAX8548 MAX8548EUB capacitors 0.1uf 63v kemet make 10MV1200AX
2011 - P0469NL

Abstract: No abstract text available
Text: vertically with air flowing from pin 1 to pin 3, MOSFET temperature 120 C, Vin = 48 V. Fig. 2: Available , with air flowing from pin 1 to pin 3, MOSFET temperature 120 C, Vin = 48 V. Figures 3 & 4 with , , MOSFET temperature 120 C, Vin = 48 V. Fig. 4: Available output power vs. ambient air temperature and , , MOSFET temperature 125C, Vin = 48 V. Fig. 6: Available output power vs. ambient air temperature and , baseplate mounted vertically with air flowing from pin 1 to pin 3, MOSFET temperature 125C, Vin = 48 V


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PDF QME48T35120 EN60950-1 TR-332, 18-May-11 P0469NL
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