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Part Manufacturer Description Datasheet Download Buy Part
SPW47N60C3FKSA1 Infineon Technologies AG Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
SPW47N60C3 Infineon Technologies AG Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
SPW47N60C3 Infineon Technologies AG Avnet 1,200 $10.46 $8.72
SPW47N60C3 Infineon Technologies AG Rochester Electronics 160 $10.14 $8.24
SPW47N60C3 Infineon Technologies AG Chip1Stop 2 $10.00 $10.00
SPW47N60C3FKSA1 Infineon Technologies AG Future Electronics 1,056 $12.07 $9.14
SPW47N60C3FKSA1 Infineon Technologies AG New Advantage Corporation 1,272 $24.14 $21.95
SPW47N60C3FKSA1 Infineon Technologies AG Rochester Electronics 30 $10.14 $8.24
SPW47N60C3FKSA1 Infineon Technologies AG Avnet 11,407 $9.89 $9.79
SPW47N60C3FKSA1 Infineon Technologies AG RS Components 10 £8.47 £8.11
SPW47N60C3FKSA1 Infineon Technologies AG Newark element14 1,108 $13.05 $10.13
SPW47N60C3FKSA1 Infineon Technologies AG element14 Asia-Pacific 2,104 $16.64 $12.92
SPW47N60C3FKSA1 Infineon Technologies AG Farnell element14 1,743 £9.73 £7.97
SPW47N60C3FKSA1 Infineon Technologies AG RS Components 55 £9.45 £8.11

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47n60c3 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - 47N60C3

Abstract: IXKH47N60C3 smps high power ID100 065B1 47n60
Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKH 47N60C3 VDSS = 600 V ID25 = 47 A RDS(on) = 70 m Low RDS(on), High Voltage, Superjunction MOSFET Symbol Test Conditions , ) IXKH 47N60C3 Symbol gFS Test Conditions Characteristic Values (TJ = 25°C, unless otherwise , ,065B1 6,259,123B1 6,162,665 IXKH 47N60C3 Fig. 1. Output Characteristics @ 25 Deg. C 50 180 , Centigrade 125 150 IXKH 47N60C3 Fig. 8. Transconductance Fig. 7. Input Adm ittance 120 100


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PDF 47N60C3 ID100 O-247 728B1 065B1 123B1 47N60C3 IXKH47N60C3 smps high power ID100 065B1 47n60
1999 - 47n60c3

Abstract: P-TO247 47N60C P-TO-247 SPW47N60C3 47n60c3 infineon 2449
Text: - 47N60C3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol


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PDF SPW47N60C3 P-TO247 47N60C3 47n60c3 P-TO247 47N60C P-TO-247 SPW47N60C3 47n60c3 infineon 2449
1999 - 47n60c3

Abstract: 47n60 Q67040-S4491 47N60C 47n60c3 infineon
Text: Final data SPW47N60C3 VDS @ Tjmax RDS(on) ID 650 0.07 47 P-TO247 Cool MOSTM Power Transistor Feature · New revolutionary high voltage technology · Worldwide best RDS(on) in TO 247 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances V A Type SPW47N60C3 Package P-TO247 Ordering Code Q67040-S4491 Marking 47N60C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current TC = 25 °C


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PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 47n60 Q67040-S4491 47N60C 47n60c3 infineon
1999 - 47n60c3

Abstract: SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10
Text: SPW47N60C3 Preliminary data Cool MOSTM=Power Transistor = Feature ·=New revolutionary high voltage technology Product Summary · Ultra low gate charge VDS @ Tjmax 650 V ·=Periodic avalanche rated RDS(on) 0.07 · Extreme dv/dt rated ID 47 A ·=Ultra low effective capacitances P-TO247 Type Package Ordering Code Marking SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Continuous


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PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10
1999 - SPW47N60C3

Abstract: 47n60c3
Text: SPW47N60C3 Preliminary data Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances P-TO247 Type Package Ordering Code Marking SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Maximum Ratings, at TC = 25°C, unless otherwise specified


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PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 SPW47N60C3 47n60c3
1999 - 47n60C3

Abstract: 47N60C SPW47N60C3 SDP06S60
Text: SPW47N60C3 Final data Cool MOSTM Power Transistor VDS @ Tjmax 650 V RDS(on) 0.07 ID 47 A Feature · New revolutionary high voltage technology · Worldwide best R DS(on) in TO 247 · Ultra low gate charge P-TO247 · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances Type Package Ordering Code Marking SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter


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PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60C3 47N60C SPW47N60C3 SDP06S60
1999 - 47n60c3

Abstract: SPW47N60C3 SDP06S60 617 300
Text: SPW47N60C3 Cool MOSTM Power Transistor VDS @ Tjmax V RDS(on) 0.07 ID Feature 650 47 A · New revolutionary high voltage technology · Worldwide best R DS(on) in TO 247 · Ultra low gate charge P-TO247 · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances Type Package Ordering Code Marking SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Maximum Ratings Parameter Symbol Continuous drain current Value ID


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PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 SDP06S60 617 300
1999 - 47n60c3

Abstract: SPW47N60C3 47N60 SDP06S60 47N60C
Text: SPW47N60C3 Final data Cool MOSTM Power Transistor VDS @ Tjmax V RDS(on) 0.07 ID Feature 650 47 A · New revolutionary high voltage technology · Worldwide best R DS(on) in TO 247 · Ultra low gate charge P-TO247 · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances Type Package Ordering Code Marking SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Maximum Ratings Parameter Symbol Continuous drain current


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PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 47N60 SDP06S60 47N60C
1999 - 47n60C3

Abstract: SPW47N60C3 47N60 SDP06S60
Text: SPW47N60C3 Final data Cool MOSTM Power Transistor Feature · New revolutionary high voltage technology Product Summary · Ultra low gate charge VDS @ Tjmax 650 V · Periodic avalanche rated RDS(on) 0.07 · Extreme dv/dt rated ID 47 A · Ultra low effective capacitances P-TO247 Type Package Ordering Code Marking SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Continuous


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PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60C3 SPW47N60C3 47N60 SDP06S60
2005 - BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Text: No file text available


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PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
2006 - PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
Text: No file text available


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PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
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