4516CD
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD641ES 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 4516CD641 ES is a 16,777,216 words by 64 bits synchronous dynamic , MHz 6 ns CL = 2 77 MHz 7 ns M C- 4516CD641ES -A80 M C- 4516CD641ES -A10 M C- 4516CD641ES -A80L M C- 4516CD641ES -A10L ⢠Fully Synchronous Dynamic RAM, with all signals referenced to a positive , â
shows major revised points. © NEC Corporation1999 NEC MC- 4516CD641 ES Ordering
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MC-4516CD641ES
16M-WORD
64-BIT
MC-4516CD641
uPD45128163
M13348X)
M14014EJ4V0DS00
144-PIN
M144S-80A14
4516CD
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Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD64KS , 4516CD64ES 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 4516CD64KS , 4516CD64ES is a 16,777,216 words by 64 , The mark * shows major revised points. © NEC Corporation 1998 NEC MC- 4516CD64KS . 4516CD64ES , -A1 OB 100 MHz 144-pin Sm all Outline DIMM M C- 4516CD 64KS-A10BL (Socket Type) â
M C- 4516CD64ES , ) 8 pieces of /¿PD45128163G5 (Rev. E) (400 mil TSO P (II) NEC MC- 4516CD64KS . 4516CD64ES
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MC-4516CD64KS,
4516CD64ES
64-BIT
4516CD64ES
uPD45128163
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pd4564841
Abstract: No abstract text available
Text: ) [MC- 4516CD646F ] " U MC- 4516CD646 /XXX indicates active low signal. AO - A 1 1 : Address , DATA SHEET_ MOS INTEGRATED CIRCUIT MC- 4516CD646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC- 4516CD646 is a 16,777,216 words by 64 , n n e c to r: Gold plated 3 4 .9 3 m m (1 .375 inch) height [Double side] P ackage MC- 4516CD646 , MC- 4516CD646 NEC Electrical Specifications · All voltages are referenced to Vss (GND). · After
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MC-4516CD646
16M-WORD
64-BIT
MC-4516CD646
uPD4564841
pd4564841
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1998 - a10b
Abstract: ns4248 MC-4516CD64S-A10 MC-4516CD64S-A10B MC-4516CD64S-A10BL MC-4516CD64S-A80 PD45128163
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD64S 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 4516CD64S is a 16,777,216 words by 64 bits synchronous dynamic , CL = 2 77 MHz 7 ns 3,816 mW CL = 3 100 MHz 7 ns 3,672 mW CL = 2 MC- 4516CD64S -A10B (MAX.) CL = 2 MC- 4516CD64S -A10 Clock access time (MAX.) MC- 4516CD64S -A80 Clock frequency , (K) Printed in Japan The mark · shows major revised points. © 1998 MC- 4516CD64S
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MC-4516CD64S
64-BIT
MC-4516CD64S
PD45128163
a10b
ns4248
MC-4516CD64S-A10
MC-4516CD64S-A10B
MC-4516CD64S-A10BL
MC-4516CD64S-A80
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Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD64ES , 4516CD64PS 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) EO Description The MC- 4516CD64ES and MC- 4516CD64PS are 16,777,216 , Access time from CLK (MAX.) CL = 3 MC- 4516CD64ES -A10B Clock frequency (MAX.) MC- 4516CD64PS , ) 8 pieces of µPD45128163G5 (Rev. P) 26.67 mm height MC- 4516CD64PS -A10B 8 pieces of , ) MC- 4516CD64ES -A10B (10.16mm (400) TSOP (II) L EO uc od Pr t 2 Data Sheet
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MC-4516CD64ES,
4516CD64PS
64-BIT
MC-4516CD64ES
MC-4516CD64PS
PD45128163
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2000 - A80L
Abstract: PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
Text: ) 128M 16M×72 2 MC-4516CC726 A80 3 2 A10 3 2 2 MC-4516CC725 A10B 3 2 16M×64 2 MC- 4516CD646 A80 3 2 A10 3 2 2 MC- 4516CD645 A10B 3 2 125 100 100 77 100 67 125 100 100 77 100 67 33.02/1.30 3.3±0.3 4K/64 LVTTL , Module) 128M /CAS (MHz) (mA) 128M 16M×64 1 MC-4516CB64ES A10B 3 2 A10BL 3 2 2 MC- 4516CD64ES A10B 3 2 A10BL 3 2 MC- 4516CD641ES A80 3 2 A10 3 2 100 67 100 67 100 67 100 67 125 100 100 77 16 31.75
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X13769XJ2V0CD00
DRAMSDR256M×
8K/64
54pin
A10BL
PC100
400mil)
PC133
A80L
PC100
4M84
2M164
upd432836
uPD432836AL
0443 IC
512k*8 sram 450 mil
uPD432836L
PC133-333
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Not Available
Abstract: No abstract text available
Text: t M 13047EJ6V0D S00 100 M H z NEC MC- 4516CD646 Package Drawings [MC- 4516CD646F , MC- 4516CD646LF , tc K (m in .j. tc K (m in .). NEC MC- 4516CD646 [MC- 4516CD646LF ] P aram eter Ic c i , DATA SHEET_ MOS INTEGRATED CIRCUIT MC- 4516CD646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC- 4516CD646 is a 16,777 , . © NEC Corporation 1997 NEC MC- 4516CD646 Ordering Information Part num ber Clock
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MC-4516CD646
16M-WORD
64-BIT
MC-4516CD646
uPD4564841
13047EJ6V0D
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1998 - 4MX64
Abstract: PC100 8Mx64 A10B MC-458DA726F-A80
Text: SYNCHRONOUS DUAL INLINE MEMORY MODULES 32M TO 256M DENSITIES · 3.3V, 168PIN, UNBUFFERED, 1.3" HIGH WITH A GOLD FINISH 32M TO 256M SYNCHRONOUS DUAL INLINE MEMORY MODULES Part Number MC-454CB645FA-A10B MC-454CB646F-A10 MC-454CB646F-A80 MC-458CB645F-A10B MC-458CB646F-A10 MC-458CB646F-A80 MC-458CA725F-A10B MC-458CA726F-A10 MC-458CA726F-A80 MC-458DA726F-A10 MC-458DA726F-A80 MC- 4516CD645F -A10B MC- 4516CD646F -A10 MC- 4516CD646F -A80 MC-4516CC725F-A10B MC-4516CC726F-A10 MC-4516CC726F-A80 MC-4516DA726F-A10 MC
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168PIN,
MC-454CB645FA-A10B
MC-454CB646F-A10
MC-454CB646F-A80
MC-458CB645F-A10B
MC-458CB646F-A10
MC-458CB646F-A80
MC-458CA725F-A10B
MC-458CA726F-A10
MC-458CA726F-A80
4MX64
PC100
8Mx64
A10B
MC-458DA726F-A80
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1998 - Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD645 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC- 4516CD645 is a 16,777,216 words by 64 bits synchronous , Family /CAS latency Clock frequency (MAX.) MC- 4516CD645 -A10B CL = 3 CL = 2 100 MHz 67 MHz Clock access , © 1998 MC- 4516CD645 Ordering Information Part number Clock frequency (MAX.) 100 MHz Package Mounted devices 16 pieces of µPD4564841G5 (Rev. E) (400 mil TSOP (II) [Double side] MC- 4516CD645FA -A10B 168
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MC-4516CD645
16M-WORD
64-BIT
MC-4516CD645
PD4564841
MC-4516CD645-A10B
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Not Available
Abstract: No abstract text available
Text: atasheet M13318EJ5V0DS00 NEC MC- 4516CD645 Package Drawings [ MC- 4516CD645FA , 4516CD645LFA , M13318EJ5V0DS00 tc K (m in.). tc K (m in.). NEC MC- 4516CD645 [M C- 4516CD645LFA ] P a ra m e te r , DATA SHEET_ MOS INTEGRATED CIRCUIT MC- 4516CD645 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC- 4516CD645 is a 16,777,216 words by 64 , * shows maior revised points. © NEC Corporation 1998 NEC MC- 4516CD645 Ordering Information
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MC-4516CD645
16M-WORD
64-BIT
MC-4516CD645
uPD4564841
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MC-4516CD64ES
Abstract: MC-4516CD64ES-A10B MC-4516CD64PS MC-4516CD64PS-A10B PD45128163
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD64ES , 4516CD64PS 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 4516CD64ES and MC- 4516CD64PS are 16,777,216 words by , MC- 4516CD64ES , 4516CD64PS Ordering Information Part number Clock frequency Package Mounted , ) Data Sheet M13612EJ5V0DS00 MC- 4516CD64ES , 4516CD64PS Pin Configuration 144-pin Dual In-line , VCC : Power Supply VSS : Ground NC : No Connection 3 MC- 4516CD64ES , 4516CD64PS
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MC-4516CD64ES,
4516CD64PS
64-BIT
MC-4516CD64ES
MC-4516CD64PS
PD45128163
MC-4516CD64PS-A10B
MC-4516CD64ES-A10B
MC-4516CD64PS-A10B
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1998 - PD23C64020
Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Text: voltage face grade latency (cycles (MHz) level (V) /ms) 3 2 A10 2 16M×64 2 MC-4516CC725 A10B MC- 4516CD646 A80 A10 2 MC- 4516CD645 A10B 3 2 3 2 3 2 3 2 3 2 125 100 100 77 100 67 125 100 100 77 100 67 33.02/1.30 , frequency face voltage current grade latency (cycles (MHz) level (V) (mA) /ms) 3 2 A10BL 2 MC- 4516CD64ES A10B A10BL 2 MC- 4516CD641ES A80 A10 3 2 3 2 3 2 3 2 3 2 100 67 100 67 100 67 100 67 125 100 100 77 16
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X13769XJ2V0CD00
A10BL
8K/64
256M5
PD45256441
54-pin
PC133
PC100
MC-22000
PD23C64020
PD45D128442
4M84
PD45D128842
0443 IC
PD23C64000AL
45V16A
PD264
A80L
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1999 - uPD72002-11
Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Text: µPD488488 MC-4532CC726 MC-4532CD646 MC-4516CC725 MC-4516CC726 MC- 4516CD645 MC- 4516CD646 MC-458CA725 MC , -4532DA726 MC-4532DA727 MC-454DA726 MC-4564DC726 MC-458DA726 MC-458DA727 MC-4516CB64ES MC- 4516CD641ES MC , -45V8AD641KS MC-4R128BKD8J MC-4R64BKD8J MC-4RCNTYK µPD431000A µPD43256B µPD43257B µPD444010L-X MC- 4516CD64ES
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PD43256A
X13769XJ2V0CD00
PD750004
PD750006
PD750008
PD75P0016
PD750104
PD750106
PD750108
uPD72002-11
uPD16305
uPC1237
upc1701
uPD65656
2SD1392
2sb1099
UPD65625
uPD78F0841
uPG508
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1997 - micro servo 9g
Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Text: No file text available
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V20HL,
V25HS,
V30HL,
V30MX,
V35HS,
V40HL,
V50HL,
V55PI,
X10679EJDV0SG00
micro servo 9g
uPa2003
micro servo 9g tower pro
2SK1060
uPD3599
201 Zener diode
2SK2396
upc1237
infrared sensor TSOP - 1836
2SK518
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Not Available
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC- 4516CD647 16M , tim e from CLK (MAX.) M C- 4516CD647LF -A75 Clock frequency (MAX.) 133 MHz 5.4 ns â , (K) © N EC Corporation 1999 NEC MC- 4516CD647 Ordering Information Part number Clock frequency Package M ounted devices M Hz (MAX.) M C- 4516CD647LF -A75 133 MHz 168 , M14280EJ1V0DS00 NEC MC- 4516CD647 Pin Configuration 168-pin Dual In-line Mem ory Module Socket Type (Edge
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MC-4516CD647
16M-WORD
64-BIT
PD4564841
M14280EJ1V0DS00
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Not Available
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC- 4516CD645 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The M C- 4516CD645 is a 16,777,216 words by 64 , .) Active Standby CL = 3 100 MHz 7 ns 4,032 m W 28.8 mW CL = 2 MC- 4516CD645 -A1 OB , . © N EC Corporation 1998 NEC MC- 4516CD645 Ordering Information Part num ber Clock , pieces of /¿PD4564841G5 (Rev. E) (Socket Type) MC- 4516CD645FA -A1 OB (400 mil TSO P (II
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MC-4516CD645
16M-WORD
64-BIT
C-4516CD645
uPD4564841
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Not Available
Abstract: No abstract text available
Text: M C- 4516CD646F -A80 M C- 4516CD646F -A10 M C- 4516CD646LF -A80 M C- 4516CD646LF -A10 Power , . © NEC Corporation 1997 NEC MC- 4516CD646 Ordering Information Part number C lock frequency Package M ounted devices M Hz (MAX.) M C - 4516CD646F-A80 125 MHz 168-pin Dual , DATA SHEET_ MOS INTEGRATED CIRCUIT MC- 4516CD646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC- 4516CD646 is a 16,777,216 words by 64
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PDF
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MC-4516CD646
16M-WORD
64-BIT
MC-4516CD646
uPD4564841
M168S-50A78
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2001 - ELPIDA
Abstract: EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA
Text: 2 PC100(2-2-2) A80 MC- 4516CD641XS 2 PC133(2-2-2) PC133(3-3-3) A75 1 PC100 , (x16) 4 128Mbit(x16) 4 A10 *2 A75A MC- 4516CD642XS *2 3.3+/-0.3V 4K/64ms 25.4
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E0226E80
M01E0107
ELPIDA
EDS5104ABTA
EDS5108ABTA
PC800
ELPIDA DRAM selection guide
1gb 144pin pc133 so dimm
200pin SO DIMM
sdram elpida
EDS5116ABTA
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MC-4516CD646-A10
Abstract: MC-4516CD646 MC-4516CD646F-A10 MC-4516CD646F-A80 a1046H
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC- 4516CD646 is a 16,777,216 words by 64 bits synchronous , CL = 2 MC- 4516CD646 -A10 Clock access time (MAX.) MC- 4516CD646 -A80 Clock frequency , . © 1997 MC- 4516CD646 Ordering Information Part number Clock frequency Package Mounted devices 168-pin Dual In-line Memory Module 16 pieces of µ PD4564841G5 (Revision E) MHz (MAX.) MC- 4516CD646F
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MC-4516CD646
16M-WORD
64-BIT
MC-4516CD646
PD4564841
MC-4516CD646-A10
MC-4516CD646F-A10
MC-4516CD646F-A80
a1046H
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Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD641ES , 4516CD641PS , 4516CD641XS 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) EO Description The MC- 4516CD641ES , MC- 4516CD641PS and MC- 4516CD641XS , Hitachi, Ltd. MC- 4516CD641ES , 4516CD641PS , 4516CD641XS ⢠LVTTL compatible ⢠4,096 refresh cycles/64 , E0066N10 MC- 4516CD641ES , 4516CD641PS , 4516CD641XS Pin Configuration 144-pin Dual In-line Memory Module , capacitance TYP. MAX. 7 14 9 18 pF 5 MC- 4516CD641ES , 4516CD641PS , 4516CD641XS DC
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MC-4516CD641ES
4516CD641PS
4516CD641XS
16M-WORD
64-BIT
MC-4516CD641ES,
MC-4516CD641PS
MC-4516CD641XS
PD45128163
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2000 - Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD64ES , 4516CD64PS 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 4516CD64ES and MC- 4516CD64PS are 16,777,216 words by , Japan The mark ⢠shows major revised points. © 1998 MC- 4516CD64ES , 4516CD64PS Ordering , : No Connection 3 MC- 4516CD64ES , 4516CD64PS Block Diagram CKE1 CKE0 /CS1 /CS0 UDQM /CS CKE , : µPD45128163 (2M words x 16 bits x 4 banks) 4 Data Sheet M13612EJ5V0DS00 D7 MC- 4516CD64ES , 4516CD64PS
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MC-4516CD64ES,
4516CD64PS
64-BIT
MC-4516CD64ES
MC-4516CD64PS
PD45128163
MC-4516CD64PS-A10B
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Not Available
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC- 4516CD646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC- 4516CD646 is a 16 , revised points. © N EC Corporation 1997 NEC MC- 4516CD646 Ordering Information P art n u m , m m (1 .3 7 5 in ch ) h e ig h t 2 [D o u b le sid e ] NEC MC- 4516CD646 Pin Configuration 168-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated) [MC- 4516CD646F
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MC-4516CD646
16M-WORD
64-BIT
MC-4516CD646
uPD4564841
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Not Available
Abstract: No abstract text available
Text: NEC MC- 4516CD645 Package Drawings â
[ MC- 4516CD645FA , 4516CD645LFA ] 168 PIN DUAL IN-LINE , DATA SHEET_ MOS INTEGRATED CIRCUIT MC- 4516CD645 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC- 4516CD645 is a 16,777,216 words by 64 , ) CL = 3 100 MHz 7 ns 4,032 mW CL = 2 MC- 4516CD645LFA -A1 OB Access time from CLK (MAX.) MC- 4516CD645FA -A1 OB Clock frequency Power consumption (MAX.) 67 MHz 8 ns 3,744
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MC-4516CD645
16M-WORD
64-BIT
MC-4516CD645
uPD4564841
M13318EJ3V0DS00
MC-4516CD645FA,
4516CD645LFA
M168S-50A97
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2001 - Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD64ES , 4516CD64PS 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 4516CD64ES and MC- 4516CD64PS are 16,777,216 words by , 100 MHz 7 ns CL = 2 MC- 4516CD64PS -A10B 100 MHz CL = 2 MC- 4516CD64ES -A10B Clock , 8 pieces of µPD45128163G5 (Rev. P) 26.67 mm height MC- 4516CD64PS -A10B 100 MHz 144-pin Small Outline DIMM (Socket Type) MC- 4516CD64ES -A10B (10.16mm (400) TSOP (II) Data Sheet
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MC-4516CD64ES,
4516CD64PS
64-BIT
MC-4516CD64ES
MC-4516CD64PS
PD45128163
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2001 - Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD642XS 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 4516CD642XS is 16,777,216 words by 64 bits synchronous dynamic , access time from CLK Part number MC- 4516CD642XS -A75 /CAS latency CL = 3 CL = 2 Clock frequency (MAX , Corporation and Hitachi, Ltd. MC- 4516CD642XS Ordering Information Part number Clock frequency MHz (MAX.) MC- 4516CD642XS -A75 133 MHz 144-pin Small Outline DIMM (Socket Type) Edge connector: Gold plated 31.75
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MC-4516CD642XS
16M-WORD
64-BIT
MC-4516CD642XS
PD45128163
MC-4516CD642XS-A75
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