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Part Manufacturer Description Datasheet Download Buy Part
OPA4350TDC1 Texas Instruments High-Speed, Single-Supply, Rail-to-Rail Operational Amplifiers MicroAmplifier(TM) Series 0-
OPA4350TDC2 Texas Instruments High-Speed, Single-Supply, Rail-to-Rail Operational Amplifiers MicroAmplifier(TM) Series 0-
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  You can filter table by choosing multiple options from dropdownShowing 25 results of 26
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
4-350TC Thomas & Betts Sager - $1430.57 $1373.34
CL0904-3-50TR-R Eaton Corporation Avnet - - -
CL0904-3-50TR-R Eaton Corporation Avnet - $1.68 $1.07
CL0904-3-50TR-R Eaton Bussmann Sager - - -
CLH0904-3-50TR-R Eaton Bussmann Sager - - -
CLH0904-3-50TR-R Eaton Corporation Avnet - $1.62 $1.03
LT4350T-SC Thomas & Betts Sager - $451.10 $421.03
OPA4350TDC1 Texas Instruments Avnet - $13.09 $11.29
OPA4350TDC2 Texas Instruments Avnet - $65.59 $56.69
PBSS4350T Nexperia element14 Asia-Pacific - $0.52 $0.11
PBSS4350T Nexperia Farnell element14 - £0.12 £0.08
PBSS4350T Nexperia element14 Asia-Pacific - $0.52 $0.11
PBSS4350T,215 Nexperia Future Electronics - $0.16 $0.11
PBSS4350T,215 Nexperia element14 Asia-Pacific - $0.11 $0.11
PBSS4350T,215 Nexperia Future Electronics - $0.09 $0.09
PBSS4350T215 NXP Semiconductors Rochester Electronics 19,480 $0.13 $0.10
PBSS4350T215 Nexperia Avnet - $0.17 $0.15
PBSS4350T215 Nexperia Avnet - $0.05 $0.04
PBSS4350TVL Nexperia Avnet - $0.06 $0.05
SEAC-050-04-35.0-TU-TU Samtec Inc Samtec - - -
TISP4350T3BJR-S Bourns Inc Master Electronics 3,000 $0.32 $0.26
TISP4350T3BJR-S Bourns Inc Chip1Stop 12,000 $0.98 $0.30
TISP4350T3BJR-S Bourns Inc Allied Electronics & Automation - $0.72 $0.52
TISP4350T3BJR-S Bourns Inc Avnet - $0.29 $0.23
U10-K274-350T Amphenol Corporation Avnet - - -

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4350T Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - TRANSISTOR SMD CODE PACKAGE SOT23

Abstract: TRANSISTOR BC337 SMD laptop inverter SCHEMATIC TRANSISTOR K 2915 MOSFET schematic diagram of laptop inverter laptop CCFL inverter SCHEMATIC power transistors table smd transistor BC547 datasheet catalog mosfet Transistor smd NPN Transistor smd code LY 83
Text: x x x x x x x x x x x x x x x x x x x x x x . 4350T .4350D


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PDF AN10116-02 01/W97 OT457 SC-74) OT416 SC-75) OT490 SC-89) OT346 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337 SMD laptop inverter SCHEMATIC TRANSISTOR K 2915 MOSFET schematic diagram of laptop inverter laptop CCFL inverter SCHEMATIC power transistors table smd transistor BC547 datasheet catalog mosfet Transistor smd NPN Transistor smd code LY 83
2001 - GR-1089-CORE

Abstract: TISP4290T3BJ TISP4290T3BJR TISP4350T3BJ TISP4350T3BJR
Text: 290 ` 4350T3 275 MDXXCM V(BO) V T 350 Device Device Symbol T Rated for , off-state voltage, (see Note 1) Symbol '4290T3 ' 4350T3 VDRM Value ±220 ±275 Unit V , 100 µs IH ±290 ' 4350T3 RSOURCE = 300 VT ±10 RSOURCE = 300 I(BO) ±5 TA , Code TISP4290T3BJ 4290T3 TISP4350T3BJ 4350T3 Carrier Information For production


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PDF TISP4290T3BJ, TISP4350T3BJ TIA/EIA-IS-968 4290T3 4350T3 GR-1089-CORE GR-1089-CORE TISP4290T3BJ TISP4290T3BJR TISP4350T3BJ TISP4350T3BJR
2001 - Not Available

Abstract: No abstract text available
Text: and Stable Voltage -Low Voltage Overshoot Under Surge Device '4290T3 ' 4350T3 '4400T3 VDRM V 220 275 , ' 4350T3 '4400T3 Symbol VDRM Value ±220 ±275 ±335 Unit V NOTES: 1. Initially, the device must be in , '4290T3 ' 4350T3 '4400T3 Min Typ Max ±5 ±10 ±290 ±350 ±400 ±800 ±3 ±150 ±5 TA = 85 °C 54 48 43 20 16 ±10 65


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PDF TISP4290T3BJ, TISP4350T3BJ, TISP4400T3BJ -TIA/EIA-IS-968 4290T3 4350T3 4400T3 GR-1089-CORE
2001 - TISP4350T3BJR-S

Abstract: GR-1089-CORE TISP4290T3BJ TISP4290T3BJR TISP4350T3BJ TISP4350T3BJR
Text: Overshoot Under Surge VDRM V(BO) V V `4290T3 220 290 ` 4350T3 275 MDXXCM 350 , voltage (see Note 1) ' 4350T3 VDRM Value ±220 ±275 Unit V Non-repetitive peak on-state , dv/dt = ±250 V/ms, RSOURCE = 300 VT Unit `4290T3 ` 4350T3 dv/dt = ±250 V/ms, RSOURCE = , 4290T3 TISP4350T3BJ 4350T3 Carrier Information For production quantities, the carrier will be


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PDF TISP4290T3BJ, TISP4350T3BJ -TIA/EIA-IS-968 4290T3 4350T3 TISP4350T3BJR-S GR-1089-CORE TISP4290T3BJ TISP4290T3BJR TISP4350T3BJ TISP4350T3BJR
2002 - TB 1226 BN

Abstract: TB GUA 5365 MATERIAL TB GUA 5365 MATERIAL NEOPRENE tb 1229 bn E-23018 sj 2258 emp 5523 ASTM A123 galvanized iron thermal conductivity UL514
Text: No file text available


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PDF A4-A38 A39-A40 A41-A49 A50-A51 A52-A53 A54-A56 A57-A65 TB 1226 BN TB GUA 5365 MATERIAL TB GUA 5365 MATERIAL NEOPRENE tb 1229 bn E-23018 sj 2258 emp 5523 ASTM A123 galvanized iron thermal conductivity UL514
2001 - TISP4400T3BJ

Abstract: GR-1089-CORE TISP4290T3BJ TISP4350T3BJ
Text: Surge VDRM V(BO) V V '4290T3 220 290 ' 4350T3 '4400T3 275 335 MDXXCM 350 , Noted) Rating Symbol '4290T3 ' 4350T3 '4400T3 Repetitive peak off-state voltage (see Note 1 , V/ms, RSOURCE = 300 VT ±5 ±10 '4290T3 ' 4350T3 '4400T3 dv/dt = ±250 V/ms, RSOURCE =


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PDF TISP4290T3BJ, TISP4350T3BJ, TISP4400T3BJ -TIA/EIA-IS-968 4290T3 4350T3 4400T3 TISP4400T3BJ GR-1089-CORE TISP4290T3BJ TISP4350T3BJ
2001 - TISP4350T3BJR

Abstract: GR-1089-CORE TISP4290T3BJ TISP4290T3BJR TISP4350T3BJ
Text: 290 ` 4350T3 275 MDXXCM 350 Device Device Symbol T Rated for International Surge , off-state voltage (see Note 1) ' 4350T3 VDRM Value ±220 ±275 Unit V Non-repetitive peak , /dt = +/-30 mA/ms Typ dv/dt = ±250 V/ms, RSOURCE = 300 VT Unit `4290T3 ` 4350T3 dv , 4350T3 Carrier Information For production quantities, the carrier will be embossed tape reel pack


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PDF TISP4290T3BJ, TISP4350T3BJ -TIA/EIA-IS-968 4290T3 4350T3 GR-1089-CORE 10/1x 06/03/PI0265 TISP4350T3BJR GR-1089-CORE TISP4290T3BJ TISP4290T3BJR TISP4350T3BJ
2001 - TISP4400T3BJ

Abstract: GR-1089-CORE TISP4290T3BJ TISP4350T3BJ 6558f
Text: Surge VDRM V(BO) V V '4290T3 220 290 ' 4350T3 '4400T3 275 335 MDXXCM 350 , Noted) Rating Symbol '4290T3 ' 4350T3 '4400T3 Repetitive peak off-state voltage (see Note 1 , V/ms, RSOURCE = 300 VT ±5 ±10 '4290T3 ' 4350T3 '4400T3 dv/dt = ±250 V/ms, RSOURCE =


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PDF TISP4290T3BJ, TISP4350T3BJ, TISP4400T3BJ -TIA/EIA-IS-968 4290T3 4350T3 4400T3 TISP4400T3BJ GR-1089-CORE TISP4290T3BJ TISP4350T3BJ 6558f
2001 - 4350T3

Abstract: GR-1089-CORE TISP4290T3BJ TISP4290T3BJR TISP4350T3BJ TISP4350T3BJR 4290T3
Text: 290 ` 4350T3 275 MDXXCM 350 Device Device Symbol T Rated for International Surge , off-state voltage (see Note 1) Symbol '4290T3 ' 4350T3 VDRM Value ±220 ±275 Unit V , ` 4350T3 dv/dt = ±250 V/ms, RSOURCE = 300 Max TA = 25 °C TA = 85 °C VD = VDRM Min dv/dt , identified. Device Symbolization Code TISP4290T3BJ 4290T3 TISP4350T3BJ 4350T3 Carrier


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PDF TISP4290T3BJ, TISP4350T3BJ -TIA/EIA-IS-968 4290T3 4350T3 GR-1089-CORE 12/02/PI0265 4350T3 GR-1089-CORE TISP4290T3BJ TISP4290T3BJR TISP4350T3BJ TISP4350T3BJR 4290T3
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