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2N7314R

Abstract: FRL9430 2N7314
Text: HARRIS SEMICOND SECTOR MOE D 430E271 DQ33fl3S 1 Hi HAS g u HARRIS ^ HARRIS · " ' °· RCA ° GE · OBJECTIVE -r ^ x O . - r \ o , l - m 2N7314R, 2N7314H REG ISTRATIO N PENDIN G Available As FRL9430R, FRL9430H 1 A ,-5 0 0 V R D S (o n )= 7.6 0 n ° INTERSIL ° " This Objective Data Sheet Represents the Proposed Device Performance. Ra d ia tio n -H ard e ne d P-C h ann el P o w e r M O S F E T s Fea ture s: · Second Generation Rad Hard MOSFET results from new design


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PDF 430E271 DQ33fl3S 2N7314R, 2N7314H FRL9430R, FRL9430H 2N7314R FRL9430 2N7314
Not Available

Abstract: No abstract text available
Text: h t © H arris C o rp o ratio n 199 1 4-129 W °c File Number 2258 430E271


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PDF BUZ45A BUZ45A
hct4094

Abstract: No abstract text available
Text: High-Reliability High-Speed CM OS Logic ICs 37E D 430E271 DDStaB^ û « H A S CD54HC4094/3A CD54HCT4094/3A HARRIS SEMICOND SECTOR 8-Stage Shift-and-Store Bus Register T^fe-CR-OS The R C A CD54HC4094 and CD54HCT4094 are eight-stage serial shift registers having a storage latch associated with each stage for strobing data from the serial input to parallel buffered three-stage outputs. The parallel outputs may be connected directly to common bus lines. Data are shifted on positive clock transitions. The


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PDF 430E271 CD54HC4094/3A CD54HCT4094/3A CD54HC4094 CD54HCT4094 CD54HC/HCT4094 CD54HC/HCT4094 2k-47k hct4094
ha5025

Abstract: No abstract text available
Text: 350 28 475 38 8 9 9 1.8 65 75 130 - V/ns MHz ns ns ns % MHz ns ns 3 430E271 , FIGURE 19. REJECTION RATIOS v s FREQUENCY 430E271 DD5ES7Ö TT2 HHAS HA5025 Typical


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PDF 430EE71 HA5025 rch1994 HA5025 1-800-4-HARRIS
2N6259

Abstract: 2n3773 2N3773A 2N4348 2N 6259 2n3773m
Text: Hz, d u ty fa c to r < 2.%. ,2-57 Power Transistors T'$3-)5r-33 -13 7 *HAS 430E271


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PDF 2N3773, 2N4348, 2N6259 2N4348) 2N3773) 2N6259) T-33-I5 2N6259 2n3773 2N3773A 2N4348 2N 6259 2n3773m
CDP1802

Abstract: CDP1857 CDP1857C CDP1857CD CDP1857CE 43G2S71
Text: voltage Range Vss vDD Vss Vdd V 4-52 HARRIS SEMICOND SECTOR 4bE D 430E271 Q03flS3b 5 HHAS Specifications


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PDF 43D2E71 003B534 CDP1857 CDP1857C CDP1800-Series CDP1857CE CDP1857CD CDP1802 43G2S71
cq 838

Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19818 D Optoelectronic Specifications_ HARRI S SEMICOND 3 7E SECTOR D 430E271 GG27SÔD 7 ■T ^ y /- S 3 Photon Coupled Isolator CQY80 r. G a A s In fr a r e d E m ittin g D io d e & N P N S ilic o n P h o to -T r a n s is to r 1- 1 1 01 s v w in i e The GE Solid State CQ Y80 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-transistor in a dual-in-line package. This device is also


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PDF 430E271 GG27SÃ CQY80 S-429S cq 838
Not Available

Abstract: No abstract text available
Text: 2266 ■430E271 0053020 71b ■HAS specifications ts u z jb 7 ELECTRICAL


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PDF BUZ351 BUZ351 00S3S22
Not Available

Abstract: No abstract text available
Text: . RESISTIVE SW ITCHING TEST CIRCUIT Ri 430E271 □DbbflflD flbD RFG40N10LE, RFP40N10LE , dimension D. 7. Controlling dim ension: Inch. 8. Revision 4 dated 10-95. 430E271 00bböö4 40b â


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PDF RFG40N10LE, RFP40N10LE, RF1S40N1 RF1S40N1OLESM O-247 RF1S40N10LE, RF1S40N10LESM O-263AB
dual tracking power supply

Abstract: CA3094T thermistor ntc 180m CA3094 0MA810 AN6048 transistor 2sc 1014 P-8609 CA3080 CA3094A
Text: vs AMPLIFIER BIAS CURRENT (lABC, TERMINAL 5) 10-14 430E271 ÜOSSTTM bñR IH AS CA3094, CA3094A , NON-INVERTING UNITY GAIN TEST CIRCUIT 10-18 430E271 DDSST^fi E24 ■HAS CA3094, CA3094A, CA3094B Test


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PDF M3DES71 CA3094T, CA3094AT, CA3094BT, AN6048 AN6048. CA3094 dual tracking power supply CA3094T thermistor ntc 180m 0MA810 AN6048 transistor 2sc 1014 P-8609 CA3080 CA3094A
tl494 inverter

Abstract: sg1525 FET IRF730 Harris mosfet cmos ttl TL494 GD5535 Speed control USING TL494 tl494 equivalent sg1525 switching pwm ic tl494 for inverter
Text: but are not tested. Test Circuits 3-39 430E271 DDSS3S4 37^ HHAS ICL7667 Typical Performance Curves 1 , slowly. 3-42 430E271 0055357 Oflfl HHAS ICL7667 15V 9 +vc SG1527 GND T +v ICL7667 > T +165vdc IRF730 I


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PDF 4302E71 QQ5535E? ICL7667 1000pF DS0026/DS0056; TSC426 CDP68HC05 ICL7667s tl494 inverter sg1525 FET IRF730 Harris mosfet cmos ttl TL494 GD5535 Speed control USING TL494 tl494 equivalent sg1525 switching pwm ic tl494 for inverter
Not Available

Abstract: No abstract text available
Text: Procedures. Copyright © Harris Corporation 1995 ■I 430E271 ^ 00b2477 TÛ3 ■Spec , GND 0.00 V Spec Number 430E271 00b24fl 4 113 518838 HCS241MS Die Characteristics


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PDF MIL-STD-1835 CDIP2-T20, 430E271 00b24fl HCS241MS 05A/cm2 HCS241 D0b24A5
HA 7423

Abstract: No abstract text available
Text: 0GMM231 OTS « H A S HARRIS SEMICOND SECTOR SÔE D ■430E271 0044232 T31 , ­ GROUPS 10,11 I HARRIS SEMICOND SECTOR 5ÖE D ■430E271 G044234 ÔG4 Â


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PDF 43D2271 GD4M230 HCTS191MS MIL-STD-1835 CDIP2-T16, utputs-10 43D2E71 104x86 05A/cm2 HA 7423
HS3516

Abstract: HS3516RH HS-3516RH HS9-3516RH8 HS9-3516
Text: m 430E271 001:33^3 132 1 -a Specifications HS-3516RH A bsolute M axim um R atings , Equivalent/Board Spec Number H3Q2271 0Qb34Dl U3C \ 9 518078 HS-3516RH 430E271 00b340E T75


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PDF MIL-STD-1835 GDFP5-F14 130ns 12MHz HS-3516RH 10MHz IN4002 H3Q2271 0Qb34Dl HS-3516RH HS3516 HS3516RH HS9-3516RH8 HS9-3516
MWS5101EL3

Abstract: MWS5101EL3X MWS5101DL3 MWS5101ADL3
Text: HARRIS^SEm COND SECTOR MbE D 430E271 003^047 b IHAS HARRIS S E M I C O N D U C T O R T-~4(fc~Z3 ' 0 y MWS5101 MWS5101A 256-Word x 4-Bit LSI Static RAM February 1992 Features · Industry Standard Pinout · Very Low Operating C u rren t. . 8mA at VDD = SV and Cycle Time = 1^s · Two Chip Select Inputs Simple Memory Expansion · Memory Retention for Standby. Battery Voltage · Output Disable for Common I/O Systems · 3-State Data Output


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PDF 430E271 MWS5101 MWS5101A 256-Word MWS5101A MWS5101, MWS5101EL3 MWS5101EL3X MWS5101DL3 MWS5101ADL3
IRF251

Abstract: No abstract text available
Text: ) N-CHANNEL POWER MOSFETs CHARACTERISTIC ■430E271 0053^55 löT ■HAS IR F250, ¡RF251


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PDF F250/251/252/253 F250R /251R /252R /253R 120fJ IRF250, IRF251, IRF252, IRF253 IRF251
7652n

Abstract: 2n6766
Text: POWER MOSFETs O 430E271 0DS373S Specifications 2 N 6765, 2 N 6 7 6 6 HAS


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PDF
Not Available

Abstract: No abstract text available
Text: 2286.1 ■430E271 00S4ST3 TT3 ■HAS S p ecificatio n s IR F D 9 2 2 0 , IR F D 9


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PDF IRFD9220 IRFD9223 -150V -200V 550Eti
Not Available

Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR f ll h a fr fr is SEMI C ON DU C T OR b3E D m 430E271 0047L44 OST * H A S 2N7290D, 2N7290R N7290H £ REGISTRATION PENDING Currently Available as FRS440 (D, R, H) Septem 1993 ber . R adiation Hardened N -C hannel Pow er M O SFETs Features Package • 5A, 500V, RDS(on) s 1.420ft TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot * Photo Current * Neutron • Single Event -


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PDF 430E271 0047L44 2N7290D, 2N7290R N7290H FRS440 420ft O-257AA 100KRAD 300KRAD
Not Available

Abstract: No abstract text available
Text: © - ^ 200 AVss AVOO CLK 50MHz SQUARE WAVE 430E271 AVSS GDbSHbD 4SI


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PDF H12309, CXD2309 10-Bit 10-Bit HI2309, CXD2309 200mW 200ft 00bS4t
Not Available

Abstract: No abstract text available
Text: 38 75 081 G E S O L I D ST A T E 0 1E 1 9 8 14 Optoelectronic Specifications_ HARRIS SEfllCOND SECTOR Light Detector 37E D ■430E271 D02727b S^IBHAS Planar Silicon Photo-Darlington Amplifier BPW38 T h e G E S o lid S ta te B PW 38 is a supersensitive N P N P la n a r S ilicon P hoto d arlin g to n Amplifier. F o r m any applications, only the collector and em itter leads are used; however, a base lead is provided to control sensitivity and the gain o f the device. T h e


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PDF 430E271 D02727b BPW38 S-429S
CD45418

Abstract: 4541B 88ti
Text: CMOS H IG H VOLTAGE ICs 0.05 HARRIS SEMICOND SECTOR .44E D C D 4541B Types Si 430E271


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PDF 0037b44 CD4541B CD454-1B. CD45418 4541B 88ti
CA3162 pin diagram

Abstract: CA3162AE CA3162 ca3161e harris 741 astable multivibrator 999mV ca3162e CA3162E HARRIS A3162
Text: DISPLAY I 430E271 QQS1443 flQS Wk$CA3162, CA3162A The additional logic shown within the


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PDF CA3162 CA3162E CA3162AE CA3161E CD4511B CA3161E, 999mV CA3162 pin diagram CA3162 ca3161e harris 741 astable multivibrator CA3162E HARRIS A3162
EL2039

Abstract: ha2830
Text: Metallization Mask Layout HA-2830 2-396 HARRIS SEMICOND SECTOR blE D HA-2839 430E271 004b5bb


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PDF HA-2839 25kWV 600MHz 10MHz HA-2839 25V/ns HA-2830 EL2039 ha2830
CA339

Abstract: CA139 CA139A CA239 CA239A CA339A DD321 LM339 LM339A industrial pulse generators schematic
Text: HARRIS SEMICOND SECTOR ' 4DE D ■430E271 DDBSlflb 7 HHAS CA139, CA139A, CA239. CA239A, CA339, CA339A


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PDF DD321Ã CA139A, CA239, CA239A, CA339, CA339A, LM339* LM339A* CA339 CA139 CA139A CA239 CA239A CA339A DD321 LM339 LM339A industrial pulse generators schematic
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