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PR141C1000-116-ACC-F03-1 E-Switch Inc Pushbutton Switch, SPST, Off-on, Quick Connect Terminal, Panel Mount
RB141C1000-124 E-Switch Inc Rocker Switch, SPST, Off-on, Maintained, Quick Connect Terminal, Rocker Actuator, Panel Mount
RB141C1000-114 E-Switch Inc Rocker Switch, SPST, Off-on, Maintained, Quick Connect Terminal, Rocker Actuator, Panel Mount
RB141C1000-134 E-Switch Inc Rocker Switch, SPST, Off-on, Maintained, Quick Connect Terminal, Rocker Actuator, Panel Mount
PR141C1000-114 E-Switch Inc Pushbutton Switch, SPST, Off-on, Maintained, Quick Connect Terminal, Panel Mount
PR141C1000-116 E-Switch Inc Pushbutton Switch, SPST, Off-on, Maintained, Quick Connect Terminal, Panel Mount
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2241C 1000 Alpha Wire Newark element14 22 $893.20 $775.13
38-PR141C1000116 PUI 16 - -
38-PR141C1000136 PUI 16 - -
38-RB141C1000114 PUI 16 - -
38-RB141C1000135 PUI 2,020 - -
KM41C1000AP-10 Samsung Semiconductor Bristol Electronics 63 - -
KM41C1000BP-8 KYOCERA Corporation Bristol Electronics 16 $8.96 $4.48
KM41C1000BP-8 Samsung Electronics Co. Ltd Bristol Electronics 58 - -
KM41C1000BP-8 . Bristol Electronics 36 - -
KM41C1000BP-8 Samsung Semiconductor Bristol Electronics 54 - -
KM41C1000CZ7 Samsung Semiconductor Bristol Electronics 11 - -
KM41C1000P-10 Samsung Semiconductor Bristol Electronics 11 - -
PR141C1000-116 E-Switch Inc element14 Asia-Pacific 3,000 $3.15 $2.40
PR141C1000-116 E-Switch Inc Newark element14 3,000 $1.89 $1.34
PR141C1000-116 E-Switch Inc Farnell element14 3,000 £1.67 £1.37
PR141C1000-116-ACC-F03-1 E-Switch Inc PUI 2,000 - -
PR141C1000-116/ACC-F03-1 E-Switch Inc Future Electronics - $1.48 $1.22
RB141C1000-114 E-Switch Inc element14 Asia-Pacific 110 $2.26 $1.53
RB141C1000-114 E-Switch Inc Farnell element14 110 £1.01 £0.81
RB141C1000-114 E-Switch Inc Newark element14 110 $1.14 $0.78
RB141C1000-135 E-Switch Inc Future Electronics - $1.16 $0.93

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41C1000 datasheet (1)

Part Manufacturer Description Type PDF
41C1000 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

41C1000 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 Texas Instruments eprom 2732 814400
Text: 41256 41256 1M x 1(1M) 511000 421000 511000 41C1000 4C1024 511000 256K x 4(1M


Original
PDF 71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 Texas Instruments eprom 2732 814400
41C1000

Abstract: fujitsu 814100 TC 55464 toshiba 816b 658128 hn623257 HN62304 M7202A 41c464 hn62324
Text: MEM ORY ICs 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density 64K 25 6 K FUNCTION GUIDE Org. X X Mode Page F. Page Nibble S. C olu m n Samsung K M 416 4 KM 41C256 KM 41C257 KM 41C258 KM 41C464 KM 41C466 KM 41C1000 KM 41C 1001 K M 41C 10 02 KM 44C256 KM 44C258 K M 41C 40 00 KM 41C 4001 K M 41C 40 02 K M 44C 10 00 KM 44C1002 Toshiba Hitachi Fujitsu NEC Oki M SM 3764 1 1 TC 51256 TC51257 TC 51258 TC51464 TC 51466 TC 511000 TC511001 TC 511002 TC 514256 TC 514258 TC 514100


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PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba 816b 658128 hn623257 HN62304 M7202A hn62324
41C1000

Abstract: 41C464 424170 NEC TC55B8128 CY70199 44C1000 TC5116100 HN62404P KM41C1000 TC511000
Text: MEM ORY ICs 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 CRO SS REFERENCE GUIDE M ode F. Page N ibble S. C o lu m n Sa m su n g KM 41C256 KM 41C257 KM 41C258 KM 41C464 KM 41C466 KM 41C1000 K M 41C 10 01 KM 41C1002 KM 44C256 KM 44C258 KM 41C4000 K M 41C 40 01 KM 41C4002 KM 44C1000 KM 44C1002 KM 48C512 KM 49C512 KM 416C256 KM 418C256 KM 41C16000 KM 44C4000 Toshiba TC 51256 TC 51257 TC 51258 TC51464 TC 51466 TC511000 TC511001 TC511002 T C 514256 TC 514258 T C 51 4100 TC514101


OCR Scan
PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 424170 NEC TC55B8128 CY70199 44C1000 TC5116100 HN62404P KM41C1000 TC511000
41C1000

Abstract: KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 41C1000BJ
Text: KMM591000AN 1 MX 9 DRAM SIMM Memory Module FEATURES · Performance range: tR A C tC A C tR C DRAM MODULES GENERAL DESCRIPTION The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs (KM 44C1000AJ - 1 M X 4 ) in 20-pin SOJ package and 1M b it DRAM (KM 41C1000BJ - 1M X 1) in 20-pin SOJ package mounted on a 30-pin glass-epoxy substrate. A 0.22fiF decoupling capacitor is mounted for each DRAM. The KM M 591000AN is a Single


OCR Scan
PDF KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22fiF 41C1000 KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7
41C1000

Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
Text: KM41C1000C AC CHARACTERISTICS (0oC¿Tas70°C, Vcc=5.0V± 10%, See notes 1, 2) CMOS DRAM - 41C1000C-7 KM41C1000C-Í KM 41C1000C-6 KM Parameter Read command hold time referenced to CAS Read command hold time


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PDF KM41C1000C KM41C1000C 576x1 KM41C1000C-6 KM41C1000C-7 KM41C100 20-LEAD 41C1000 KM41C1000CJ-7 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
41c1000

Abstract: AS11D KM41C1000CP
Text: PIN CONFIGURATION (Top Views) CMOS DRAM · KM 41C1000CP /CLP/CSLP · KM 41C 1O O O C J/CU /C SU · K M 41C1000CZ /CLZ/CSLZ A9 Q · KM41C1000CT/CL.T/CSLT 0 « ] V ss w [2 RÄS [ T T.F. [4 Ao


OCR Scan
PDF KM41C1OOOC/CL/CSL KM41C1000C/CLVCSL KM41C1000C 20-LEAD 41c1000 AS11D KM41C1000CP
TCA 290

Abstract: 41C1000 km44c1000aj 591000AN
Text: KMM591000AN 1 M X 9 DRAM SIMM Memory Module FEATURES · Performance range: tR AC tC A C 2 0 2 0 DRAM MODULES GENERAL DESCRIPTION The Samsung K M M 591 000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung K M M 591000AN consist of two 4M bit DRAMs (KM 44C1000AJ - 1M X 4) in 20-pin SOJ package and 1M bit DRAM (KM 41C1000BJ - 1 M X 1) in 20-pin SOJ pockage mounted on a 30-pin glass-epoxy substrate. A 0.22/iF decoupling capacitor is mounted for each DRAM. The KM M 591000AN is a Single


OCR Scan
PDF KMM591000AN 000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22/iF TCA 290 41C1000 km44c1000aj
41C464

Abstract: 41C258 41C1000 44C256C
Text: . 112 128 KM41C1000C. KM 41C1000CL.


OCR Scan
PDF KM41C256 KM424C256 424C256A. KM424C257 KM428C128 428C256. 41C464 41C258 41C1000 44C256C
KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P 41C1000 KM41C464Z 49/KM41C1000BLJ KM41C256J km4164
Text: MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KM41C464J KM41C464Z KM41C466P KM41C466J KM41C466Z 1M bit KM41C1000BP KM41C1000BJ KM41C1000BZ KM41C1000BLP KM41C1000BLJ KM 41C1000BLZ KM41C1001BP KM41C1001BJ KM41C1001BZ KM41C1002BP KM41C1002BJ KM41C1002BZ KM44C256BP [ KM44C256BJ KM44C256BZ KM44C256BLP KM44C256BLJ KM 44C256BLZ KM44C266BP KM44C266BJ Organization 64K X 1 256K 256K 256K 256K 256K X X


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PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP 41C1000 KM41C464Z 49/KM41C1000BLJ km4164
Not Available

Abstract: No abstract text available
Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs (KM 44C1000AJ - 1M X 4) in 20-pin SOJ package and 1M bit DRAM (KM 41C1000BJ - 1M X 1) in 20-pin SOJ package mounted on a 30-pin glass-epoxy substrate. A 0.22f*F decoupling capacitor is mounted for each DRAM. tR A C tC A C tR C 70ns


OCR Scan
PDF KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 591000AN- 130ns
KM41C1000CL-6

Abstract: 41C1000 1mx1 DRAM
Text: °c < T a < 70°c, Vcc=5.0V ± 10%, See notes 1, 2) CMOS DRAM 41C1000CL-8 KM41C1000CL-6 KM41C1000CL


OCR Scan
PDF KM41C1000CL KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 110ns 130ns 150ns KM41C1000CL 576x1 41C1000 1mx1 DRAM
Not Available

Abstract: No abstract text available
Text: M 10008L-8 KM 41C1000BUO Min Parameter Min Max Min * 150 180 ns 175 , , whichever is later. Operation of the K M 41C1000BL begins by strobing In a valid row address w ith RAS


OCR Scan
PDF 001003b KM41C1000BL KM41C1000BL KM41C1000BL- 110ns KM41C1Ã 130ns 150ns KM41C1000BL-10
Not Available

Abstract: No abstract text available
Text: , and CÄ3, A ddress C ycling @ tRc = m in.) KM 41C 1000C -6 K M 41C 1000C -7 KM 41C1000C -8 S , M 41C 1000C -6 K M 41C1000C -7 K M 41C1000C -8 ICC4 E 55 50 45 mA mA mA ICC5


OCR Scan
PDF KM41C1000C KM41C1000C 576x1 110ns KM41C1000C-7 130ns KM41C1000C-8 KM41C1000C-6 150ns
41C1000

Abstract: KMM591000AN 41C1000BJ
Text: MM591000AN 1 M X 9 DRAM SIMM Memory Module FEATURES · Performance range: tR A C tC A C tR C DRAM MODULES GENERAL DESCRIPTION The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs (KM 44C1000AJ - 1M X 4) in 20-pin SOJ package and 1M bit DRAM (KM 41C1000BJ - 1M X 1 ) in 20-pin SOJ ¡package1 mounted on a 30-pin glass-epoxy substrate. A 0.22jiF decoupling capacitor is mounted for each DRAM. The KMM591OOOAN is a Single In-line


OCR Scan
PDF MM591000AN 591000AN KMM591 44C1000AJ 20-pin 41C1000BJ 30-pin 22jiF KMM591OOOAN 41C1000 KMM591000AN
41C1000A

Abstract: KM41C1000 KM41C1000A-10 KM41C1000AZ 41C1000 km41c1000a KM41C1000AJ
Text: DRAM '^ 3 - i s STANDARD OPERATION (Continued) KM 41C1000A-7 KM 41C1000A-8 KM 41C1000A-10 , notes 1,2) Parameter K M 41C1000A-7 Symbol Min 130 155 70 20 35 40 5 0 3 50 70 10,000 20 70 20 10,000 20 15 5 0 10 0 15 55 35 0 0 50 35 25 50 Max KM 41C1000A-8 Min 150 175 80 20 40 45 5 0 3 60 80 10,000 20 80 20 10,000 25 20 5 0 15 0 20 65 40 0 0 60 40 25 50 Max KM 41C1000A-10 Min 180 210 100


OCR Scan
PDF KM41C1Q KM41C1000A- KM41C1000A-10 130ns 150ns 180ns KM41C1000A 576x1 41C1000A KM41C1000 KM41C1000A-10 KM41C1000AZ 41C1000 KM41C1000AJ
KM41C1000BJ

Abstract: KM41C1000B KM41C1000BP KM41C1000B-7 41C1000 KM41C1000B-8 41C1000B
Text: peration o f the KM 41C1000B begins by stro bing in a valid row address w ith RAS w hile CAS remains high , precharge tim e (tRP) requirem ent. CMOS DRAM Write The KM 41C1000Bcan perform early w rite, late w , 41C1000Bbegin a com plex sequence of events. If the sequence is broken by v iolatin g m inim um tim ing requirem , KM 41C1000Bis stored on a tiny capa c ito r w ith in each m em ory cell. Due to leakage the data may


OCR Scan
PDF KM41C1000B KM41C1000B-6 KM41C1000B-7 KM41C1000B-8 KM41C1000B-10 100ns 110ns 130ns 150ns 180ns KM41C1000BJ KM41C1000B KM41C1000BP 41C1000 41C1000B
Not Available

Abstract: No abstract text available
Text: , Vcc = 5.0V± 10%, See notes 1, 2) 41C1000CL-7 KM41C1000CL-8 KM 41C1000CL-6 KM Parameter Unit


OCR Scan
PDF KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns GD1S412
Not Available

Abstract: No abstract text available
Text: n ics Package K M 41C1000C U-6 KM41C1000CLJ-7 K M 41C1000C U-8 «8 S A M S U N G


OCR Scan
PDF KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns 20-LEAD
Not Available

Abstract: No abstract text available
Text: (VCC=5V± 10%, T a =0 ~7 0° C) flN' 41C1000A-06 No Parameter 30 Write command to RAS lead


OCR Scan
PDF MN41C1000A MN41C1000A/AL/ASJ 10PIN
Supplyframe Tracking Pixel