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4164-15FGS/BZA
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Rochester Electronics LLC
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4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) |
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4164-12JDS/BEA
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Rochester Electronics LLC
|
4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) |
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4164-15JDS/BEA
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Rochester Electronics LLC
|
4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) |
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TPD4164F
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Toshiba Electronic Devices & Storage Corporation
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Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 |
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TPD4164K
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Toshiba Electronic Devices & Storage Corporation
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Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 |
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UPD48011318FF-FH16-FF1-A
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Renesas Electronics Corporation
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Low Latency DRAM, T-LBGA, /Tray |
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