The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
TMS416400-10DZ Texas Instruments 4MX4 FAST PAGE DRAM, 100ns, PDSO24
TMS416400-70DZ Texas Instruments 4MX4 FAST PAGE DRAM, 70ns, PDSO24
TMS416400-80DZ Texas Instruments 4MX4 FAST PAGE DRAM, 80ns, PDSO24
TMS664164 Texas Instruments IC SYNCHRONOUS DRAM, Dynamic RAM
TMS416400-60DGA Texas Instruments 4MX4 FAST PAGE DRAM, 60ns, PDSO24, PLASTIC, TSOP-26/24
TMS416400-80DGA Texas Instruments 4MX4 FAST PAGE DRAM, 80ns, PDSO24, PLASTIC, TSOP-26/24

4164 dram Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - dram 4164

Abstract: 4164 64k dram 4164 dram HT8955A variable delay audio preamplifier bbd delay 41256 dram logic diagram and symbol of DRAM LM386 preamplifier IC 4164
Text: sampling rate of 25KHz when combined with an external DRAM (41256/ 4164 ). The HT8955A is superior to an , A0 A1 A2 A3 A4 A5 A6 A7 DRAM 4164 WRB VSS VDD DI DO CASB 20 1 , · · Operating voltage: 5.0V Long delay time ­ 0.8 seconds (SEL=VSS, 256K DRAM ) ­ 0.2 seconds (SEL=VDD/open, 64K DRAM ) 25KHz sampling rate Continuous variable delay time Echo generators Sound , consists of a built-in pre-amplifier, onchip oscillator, DRAM interface, 10 bit A/D and D/A converters as


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PDF HT8955A 25KHz 25KHz 3000P LM386 dram 4164 4164 64k dram 4164 dram HT8955A variable delay audio preamplifier bbd delay 41256 dram logic diagram and symbol of DRAM LM386 preamplifier IC 4164
dram 4164

Abstract: 74670 register 41256
Text: logic ■ROM decoder for one 2764 and one 27256 ■RAM decoder for 4164 or 41256 DRAM ■H/W and S , DMA controller, channel 0 is used for DRAM refresh ■82C59 8 channel interrupt controller, level 0 , Is used for system ' time base, channel 1 for DRAM refresh, and channel 2 for speaker audio â


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PDF UM82C088 82C84 82C88 82C37 82C59 82C53 82C55 dram 4164 74670 register 41256
41256 dram

Abstract: 4164 dram 41256 AUDIO DELAY CIRCUIT DIAGRAM PCB digital echo sound HT8955 dram 4164 HT8955A Echo Processor IC delay PCB echo sound
Text: with an external DRAM (41256/ 4164 ). The HT8955A is superior to a conventional BBD delay unit in its , · · Operating voltage: 5.0V Long delay time ­ 0.8 seconds (SEL=VSS, 256K DRAM ) ­ 0.2 seconds (SEL=VDD/open, 64K DRAM ) 25kHz sampling rate Continuous variable delay time Echo generators Sound , pre-amplifier, on-chip oscillator, DRAM interface, 10-bit A/D and D/A converters as well as control logic. It , Connects to DRAM A6 12 A7 O CMOS OUT Connects to DRAM A7 Delayed audio signal output pin


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PDF HT8955A 10-bit 24-pin 25kHz HT8955A 256Kb 50kHz) 41256 dram 4164 dram 41256 AUDIO DELAY CIRCUIT DIAGRAM PCB digital echo sound HT8955 dram 4164 Echo Processor IC delay PCB echo sound
80387SX

Abstract: 41256 41256 dram 88C215 ibm at motherboard 80286 511000 dram 80386SX 80286 pin configuration 88c211 88C212
Text: 88C212 provides higher performance over the conventional DRAM accessing schemes. As a result, the 88C212 can support a 16 Mhz system with 100 ns DRAM by the use of the Page-Interleaved mode. The 88C212 also , the real mode and protected mode. A staggered DRAM refresh scheme is also included to reduce the power , ±0.12 Unit (mm) DRAM Type Total Memory EMS Range BankO Bankl Bank2 Bank3 1 256K 0 0 Q 512kb 0 2 1M 0 0 , ODDOQOb 3 Wkf~z5Z'33"Oi: SOLUTIONS 80386SX MOTHER BOARD DRAM INSTALLATION v 1) SOLUTIONS 386SX MOTHERBOARD


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PDF SYSL06IC 145M0 88C286 80386SX 88C211 88C212 88C215 80387SX 41256 41256 dram 88C215 ibm at motherboard 80286 511000 dram 80286 pin configuration 88c211 88C212
8955A

Abstract: 41256 dram 4164 64k dram 41256 M41256
Text: 6 K DRAM ) - 0.2 seconds (SEL=V D D /open, 64K D R A M ) 25kH z sam p lin g rate Continuous variab le , , on-chip oscillator, DRAM interface, 10-bit A/D and D/A converters a s well a s control logic. It provides , e d w ith a n e x t e r n a l D R A M (41256/ 4164 ). The H T8955A is superior to a conventional B B D , Osc. - Ó O S C 4 DRAM SEL D/A Converter Shift Register 4- -Ó S E L - O DATA ouT O *- , sign al in pu t pin (inverted) Pre-am plifier output pin D elayed audio sign al output pin DRAM type


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PDF HT8955A 10-bit 24-pin HT8955A 8955A 41256 dram 4164 64k dram 41256 M41256
buss 4164

Abstract: 4164 countersunk screws tightening torque
Text: Bussmann® Limiter Fuseblocks 4164 & 4164 -FR For ANN & ANL Dimensional Data 3.41" (86.6mm) 1.20" 1.00" 0.47" (30.5mm) (25.4mm) (11.9mm) BUSS 0.94" (23.9mm) 4164 2.44" (62.0mm) 1.44" (36.6mm) CATALOG SYMBOL: 4164 AND 4164 -FR LIMITER FUSEBLOCKS 125 VOLTS 0.22" (5.6mm) .483" + .005" (12.3mm + .127mm) No. 4164 and 4164 -FR · · · · · 4164 furnished with locknuts. 4164 -FR furnished with free running nuts. Single-pole, stud terminal. Molded


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PDF 4164-FR 127mm) 4164-FR N00012 buss 4164 4164 countersunk screws tightening torque
4164

Abstract: countersunk screws tightening torque countersunk
Text: Bussmann® Limiter Fuseblocks 4164 & 4164 -FR For ANN & ANL Dimensional Data Catalog Symbol: 4164 AND 4164 -FR Limiter Fuseblocks 125V · · · · · 4164 furnished with locknuts. 4164 , mounting holes on 1-inch centers for No. 10 flat head screws. · The 4164 -FR is not recommended for applications with vibrations. · Tightening torque is 120 In-Lbs. No. 4164 and 4164 -FR Length - 3.38 , N03055 Form No. 4164 and 4164 -FR Page 1 of 1 Data Sheet: 2133 Bussmann


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PDF 4164-FR 4164-FR N03055 4164 countersunk screws tightening torque countersunk
2000 - PEB 4165 T

Abstract: 4166 equivalent AHV-SLIC PEB31665 WMF Pt 100 sensor BB-100 PEB4165 analog subscriber line PEB 4166 T
Text: ://www.infineon.com PEB 4166 PEB 4164 Table of Contents Page 1 1.1 1.2 1.2.1 1.2.2 1.2.3 General , . 39 Data Sheet 5 21 21 23 24 2000-07-12 PEB 4166 PEB 4164 List of Figures , . . . . . . . . . . . . . . . . . . 38 6 2000-07-12 PEB 4166 PEB 4164 List of Tables , . . . . . . . . 28 7 2000-07-12 PEB 4166 PEB 4164 General Description PRELIMINARY , Analog POTS PEB 4164 PEB 4165 PEB 4166 AHV-SLIC-S AHV-SLIC AHV-SLIC-E Advanced High Voltage


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PDF D-81541 PEB 4165 T 4166 equivalent AHV-SLIC PEB31665 WMF Pt 100 sensor BB-100 PEB4165 analog subscriber line PEB 4166 T
dram 4164

Abstract: No abstract text available
Text: ADVANCE MICRON 8 MEG X MT16D832 32, 16 MEG x 16 DRAM MODULE PAM MODULE FEATURES , width 8 MEG x 32,16 MEG x16 FAST-PAGE-MODE PIN ASSIGNMENT (Top View) 72-Pin SIMM (DE-16) DRAM , X MT16D832 16 DRAM M ODULE RAS cycle (READ, W RITE) or RAS REFRESH cycle (RASONLY, CBR or , bank select for the x l6 memory organization. FUNCTIONAL BLOCK DIAGRAM DRAM MODULE MT16D832 REV , x 16 DRAM M ODULE MT16D832 TRUTH TABLE ADDRESSES FUNCTION Standby READ EARLY-WRITE


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PDF MT16D832 72-pin 048-cycle DE-16) MT16D832M/G A0-A11 dram 4164
DOT MATRIX PRINTER SERVICE MANUAL

Abstract: sc1236 SC-1236 4247-A00 IBM 6400 IBM 4230 4312-002 dot matrix printer simplex 4002 69G7336
Text: SEK Euro Description IBM 4400 Thermal Printer Serial&Parallel port, 8MB DRAM & 4MB Flash, ASCII , Memory Option *), 8MB DRAM and 6MB Flash 7 218 6 313 12 671 0 1 771 *) For a total of 16MB DRAM and 10MB Flash (prereq. for IPDS) Media and output handling options 4400 4400 4400 , /Twinax Attachment IPDS for Twinax or Ethernet NIC Memory Option, 8MB DRAM and 6MB Flash Bar Code , 459 3 712 4247 4247 4247 4247 4247 4247 4164 7803 4165 4121 4124 7703 Attachment


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PDF 14J1460 14J1458 14J1459 69G7343 69G7344 69G7341 69G7342 69G7339 69G7340 69G7345 DOT MATRIX PRINTER SERVICE MANUAL sc1236 SC-1236 4247-A00 IBM 6400 IBM 4230 4312-002 dot matrix printer simplex 4002 69G7336
Not Available

Abstract: No abstract text available
Text: ADVANCE |U |IC Z R O N 8 MEG DRAM MODULE X MT16D832 32, 16 MEG x 16 DRAM MODULE , ,388,608 words organized in a x32 configuration. The MT16D832 and MT16D832B are the sam e DRAM m , MEG X MT16D832 16 DRAM MODULE For x l6 applications, the corresponding DQ and CAS pins must , x 16 DRAM MODULE TRUTH TABLE ADDRESSES DATA-IN/OUT MS ÜÄ5T WE *R 'C , MEG ABSOLUTE MAXIMUM RATINGS* X MT16D832 32, 16 MEG x 16 DRAM MODULE ’ Stresses greater


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PDF MT16D832 72-pin 240mW 048-cycle DE-16) MT16D832M/G A0-A11; A0-A11
IC 4164

Abstract: 4164-2 RAM 4164 ram 4164 ram mos 4164 4164-2 HYB4164 RAM 4164 4164 eve
Text: Write Enable Power Supply (+ 5 V ) Ground (0 V) c 7 V CC C 8 The H YB 4164 is a 65536-words by , en s proprietary chip cover is used. The H YB 4164 uses single tran sisto r dynam ic storage cells , address inputs perm it the HYB 4164 to be packaged in an industry standard 16-pin dualin-line package , , including clocks. In addition to the usual read, w rite and readm odify-write cycles, the H YB 4164 is , ility is given by using "e a rly w rite " operation. January 1984 HYB 4164 Block Diagram


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PDF 536-Bit 16-pin iPin12) HYB41 IC 4164 4164-2 RAM 4164 ram 4164 ram mos 4164 4164-2 HYB4164 RAM 4164 4164 eve
4164 ram

Abstract: HYB4164 4164-2 RAM HYB4164-P2 4164 4164 dynamic ram siemens hyb4164 4164-2 HYB4164-1 RAM 4164
Text: 8 9 □ a7 Vcc Power Supply (+5V) Vss Ground (0V) 6 The HYB 4164 is a 65536-words by 1 , chip cover is used. The HYB 4164 uses single transistor dynamic Storage cells and dynamic control , read, write and read-modify-write cycles, the HYB 4164 is capable of early and delayed write cycles , January 1984 Powered by ICminer.com Electronic-Library Service CopyRight 2003 HYB 4164 Block Diagram , to this signal. Powered by ICminer.com Electronic-Library Service CopyRight 2003 HYB 4164 Power On An


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PDF 536-Bit 536X1 16-pin HYB4164-1) HYB4164-3) HYB4164-P1 HYB4164-P2 HYB41 64-P3 4164 ram HYB4164 4164-2 RAM 4164 4164 dynamic ram siemens hyb4164 4164-2 HYB4164-1 RAM 4164
Not Available

Abstract: No abstract text available
Text: X MT16D832 32, 16 MEG x 16 DRAM MODULE 8 MEG DRAM MODULE X 32,16 MEG x16 , are the same DRAM module versions except that the MT16D832B has a 4,096-cycle refresh instead of a 2 , refresh counter for automatic RAS addressing. X MT16D832 3 2 ,1 6 MEG x 16 DRAM MODULE For x l6 , 8 MEG X 32, 16 MEG X MT16D832 16 DRAM MODULE TRUTH TABLE DATA-IN/OUT ADDRESSES , specifications without notice. 91993, Micron Semiconductor, Inc. DRAM MODULE L FAST-PAGE-MODE MI CR


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PDF MT16D832 72-pin 240mW 048-cycle A0-A11; A0-A11
4164 ram

Abstract: 4164 dynamic ram RAM 4164 4Q709 4164 4164 (RAM)
Text: PACKAGE* TM 4164FM 9 . . . M SINGLE-IN-UNE PACKAGE (TOP VIEW) TM 4164 _ 9-12 TM 4164 _ 9-15 T M 4164 , 1575 mW 1215 mW STANDBY (TYP) 157 .5 mW 157.5 mW 157.5 mW T M 4164_9-12 T M 4164 _9-15 TM 4164 , 17 of the 256K x 9 SIP will be memory address A 8. description PIN NOMENCLATURE The TM 4164 , equivalent leaded capacitors due to reduced lead inductance. Also, with 0 .3 inch board spacing the TM 4164 9 , system flexibility. The TM 4164 9 is rated for operation from 0 ° C to 7 0 °C . operation address (A0


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PDF TM4164EL9, TM4164FM9 30-Pin 4164EL9 4164FM 4164 ram 4164 dynamic ram RAM 4164 4Q709 4164 4164 (RAM)
PEB 4165 T

Abstract: 4164-2 PEB 4165 4166 PEB 4166 T 4166 equivalent PEB3465 INFINEON peb marking
Text: Advanced High Voltage Subscriber Line Interface Circuit PEB 4164 PEB 4164-2 PEB 4165 PEB 4166 PEB , MuSLIC -S MuSLIC -S2 MuSLIC -E MuSLIC -E2 MuSLIC Product ID PEB 31664, PEB 4164 , PEB 3465 , device surface is the same for both PEB 4164 and PEB 4164-2 as well as PEB 4166 and PEB 4166-2 , MuSLIC -S / MuSLIC -S2 Table 3 MuSLIC -S Related Documentation Chip Documentation PEB 4164 ­ Advanced High Voltage Subcriber Line Interface Circuit (AHV-SLIC) PEB 4166/PEB 4164 Preliminary


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PDF 4166/PEB 4165/PEB 3465/PEB PEB 4165 T 4164-2 PEB 4165 4166 PEB 4166 T 4166 equivalent PEB3465 INFINEON peb marking
4164 64k dram

Abstract: Z41H tms4164 S41128B
Text: characteristics of the TM S 4164 NMOS dynamic RAM. A logic low on the RAS1 input selects the low er DRAM ; a logic low on the RAS2 input selects the upper DRAM . The T M S 41128B-15 features a RAS access time of 150 ns , A lt 7 9 DA7 vddC 8 t RAS1 (pin 3) selects th e lo w er DRAM , and pin 3 on the upper DRAM is a no connect. RAS2 (pin 4) selects the upper DRAM , and pin 4 on th e low er DRAM is a no connect. PIN , (either RAS1 or RAS2) must be applied to select either the low er DRAM or the upper DRAM . When a RAS-only


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PDF S41128B 072-BIT 4164 64k dram Z41H tms4164
4164 ram

Abstract: IC 4164 DYNAMIC RAM 65536 TEXAS tms4164 RAM 4164 4164 (RAM)
Text: ) V ss Ol TM 4164 _ _ 8-12 _ 8-15 TM 4164 _ TM 4164 _ 8-20 Common C A S Control for Eight Common , ) 140 mW 140 mW 140 mW TM 4164 8-12 TM 4164 8-15 TM 4164_8-20 Operating Free-Air Temperature . , is memory address A 8. description The TM 4164 _ _ 8 series are 512K, dynamic PIN NOMENCLATURE , . Data out is unlatched to allow greater system flexibility. The TM 4164 8 is rated for operation from 0 , selected. The common I/O feature of the TM 4164 8 dictates the use of early write cycles to prevent


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PDF TM4164FL8, TM4164FM8 30-Pin 4164FL8 4164FM 4164 ram IC 4164 DYNAMIC RAM 65536 TEXAS tms4164 RAM 4164 4164 (RAM)
U15-U10

Abstract: MT18D236
Text: |V /|ICZRO N MT9D136, MT18D236 1 MEG. 2 MEG x 36 DRAM MODULE DRAM MODULE FEATURES · C o m m , MODE PIN ASSIGNMENT (Front View) 72-Pin SIMM (DD-9) 1 Meg x 36, (DD-10) 2 Meg x 36 N E W DRAM , Technology, Irte. |V |IC =RO N MT9D136, MT18D236 1 MEG, 2 MEG x 36 DRAM MODULE REFRESH _ R A , in ed in its co rrect state b y m a in ta in in g p o w er and exe cu tin g an y N E W DRAM SIMM , MT4C4001JDJ U5 = MT4C4004JDJ NOTE: Due to the use of a Quad CAS parity DRAM , RASO is common to all DRAMs


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PDF MT9D136, MT18D236 72-Pin MT1BD236 U15-U10
VL82C205A-16QC

Abstract: VL82c205 vl82c205a16qc VL82C2 VL82C205a
Text: page mode DRAM accesses for PC/ATcompatible systems · Speed upgrades to 20 MHz · Companion to VL82CPCAT , ) · Less than 0.6 wait state average DRAM performance · Low power CMOS technology · 68-pin PLCC , the DRAM control signals. Status 0 - This input is used along with -S1 and M /-IO to determine which , which bank of DRAM should be aocessed. CAS Enable Input for Bank 1 - This input is used along with CASO, RASO, and RAS1 to determine which bank of DRAM should be aocessed. FtAS Enable Input for Bank 0 - This


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PDF VL82C205A VL82CPCAT-16 VL82CPCAT-20, 68-pin VL82C205 VL82C205A-16QC vl82c205a16qc VL82C2 VL82C205a
Not Available

Abstract: No abstract text available
Text: 1 MEG x 40, 2 MEG x 20 IC DRAM CARD MICRON B S5E D ltCHNOl.OCiV INC IC DRAM CARD 4 , The MT12D88C140 is a 4 megabyte, IC DRAM card organized primarily as a 1 Meg x 40 bit memory array , ) cycle refresh; a very low current, data retention mode. Standard compo­ nent DRAM refresh modes are , Technology, Inc. I D A CARD C RM • JEIDA, JEDEC and PCMCIA standard 88-pin IC DRAM card • Polarized receptacle connector • Industry standard DRAM functions and timing • High-performance, CMOS


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PDF MT12D88C140 88-Pin
4164 Fuseblock

Abstract: buss 4164 4164 FUSE BLOCK ANN-100 E56412 bussmann Fuse 800 amps 100 volts dc ANN-125 ANN-150 BUSS JFHR2 E56412 ANN-60
Text: CURRENT IN AMPERES Fuse Block No. 4164 General Information: · Very fast-acting (high speed of , mounts in Buss fuseblock 4164 . The only controlled copy of this BIF document is the electronic


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PDF ANN-10 ANN-90 ANN-225 ANN-400 ANN-35 ANN-100 ANN-250 ANN-500 ANN-40 ANN-125 4164 Fuseblock buss 4164 4164 FUSE BLOCK ANN-100 E56412 bussmann Fuse 800 amps 100 volts dc ANN-125 ANN-150 BUSS JFHR2 E56412 ANN-60
WTS 1.7 IC 28 PIN

Abstract: No abstract text available
Text: M IC R O N 1 MT12D88C140 1 MEG x 40. 2 MEG x 20 IC DRAM CA R D IC DRAM CARD FEATURES · JEIDA, JEDEC and PCMCIA standard 88-pin IC DRAM card · Polarized receptacle connector · Industry standard DRAM functions and tim ing · H igh-perform ance, CMOS silicon-gate process · All outp u ts are , 4 m egabyte, IC DRAM card organized prim arily as a 1 Meg x 40 bit m em ory array for EDC , (BBU) cycle refresh; a very low current, data retention m ode. S tandard com po nent DRAM refresh m


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PDF MT12D88C140 88-pin x32/36/40 128ms ASSI67 MT12O80C14O WTS 1.7 IC 28 PIN
41256 dram

Abstract: MX8012 41256 41256 ram 41256 MEMORY Continuously Variable Slope Delta Modulator mx8003
Text: select pin to choose between 4164 or 41256 DRAM connection. It is pulled high so for a 64K system, it may , controlled by the user's needs. All the necessary control logic needed to drive a DRAM are included so that direct read and write are possible without a DRAM controller. 41256 or 411024 DRAMs can be used with , speech. Pin names are compatible with DRAM pin names, so a direct name match is the only require ment


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PDF 0QQQ177 MX8012 000sq. 41256 dram 41256 41256 ram 41256 MEMORY Continuously Variable Slope Delta Modulator mx8003
4164 Fuseblock

Abstract: buss 4164 Fuseblock - 4164 Cooper Bussmann 4164 4164 4164A DA 1402 bussmann fuseblock Fuseblock
Text: €” HEX WOT TIGHTENING TORQUE: 9±3 IN-LBS, (2 PL.) FUSEBLOCK BASE CLOSURE DATE ~CODE é BUSS? 4-164 ~A XXX mms 120 m-ia wmcr jmtws isbv XXX BUSS® 4164 -A TORQUE 120 !N—L8 VOLTAGE RATING 125V LABEL LABEL


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PDF 13mrn J05054 G317G P-3/97' 164-A 4164 Fuseblock buss 4164 Fuseblock - 4164 Cooper Bussmann 4164 4164 4164A DA 1402 bussmann fuseblock Fuseblock
Supplyframe Tracking Pixel