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LM118AMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1077CIH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1055CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1056CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1077CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1222MH Linear Technology IC OP-AMP, MBCY, Operational Amplifier

414 monolithic amplifier Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - VNA-25 equivalent

Abstract: 414 monolithic amplifier mcl-25 rf 5253 1007 VNA-25 marking f25 6635 fet MCL 25 marking K gaas fet
Text: Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features · 0.5 ­ 2.5 , mA/°C mA/V °C/W >1.5 2 Monolithic GaAs FET MMIC Amplifier Electrical Specifications at 25 , Operating Current 45 75 mA 3 Monolithic GaAs FET MMIC Amplifier Typical Performance Curves , 4000 Frequency (MHz) Frequency (MHz) 4 Monolithic GaAs FET MMIC Amplifier Typical , Frequency (MHz) Frequency (MHz) 5 Monolithic GaAs FET MMIC Amplifier Product Consistency


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PDF VNA-25+ VNA-25 2002/95/EC) IPC/JEDECJ-STD-020C C/85RH VNA-25 equivalent 414 monolithic amplifier mcl-25 rf 5253 1007 VNA-25 marking f25 6635 fet MCL 25 marking K gaas fet
CHA2494-QEG

Abstract: AN0017 MO-220 CHA2494 power amplifier 5 ghz 44GHZ qfn 3X3 land pattern
Text: CHA2494-QEG RoHS COMPLIANT 34-44GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2494-QEG is a wide band monolithic low noise amplifier . It is , dB dBm Specifications subject to change without notice United Monolithic Semiconductors S.A.S , 69 33 03 09 CHA2494-QEG 34-44GHz Low Noise Amplifier Main Characteristics Tamb.= +25°C, Vd , Amplifier Device thermal performances All the figures given in this section are obtained assuming that


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PDF CHA2494-QEG 34-44GHz CHA2494-QEG 34-44GHz 22dBm 120mA 24L-QFN4x5 DSCHA2494-QEG0350 AN0017 MO-220 CHA2494 power amplifier 5 ghz 44GHZ qfn 3X3 land pattern
Not Available

Abstract: No abstract text available
Text: CHA6005-99F 8-12GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6005-99F is a high power amplifier monolithic circuit, which integrates two stages and produces 32.5dBm , Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - , Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier Electrical , : +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier Absolute Maximum Ratings (1


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PDF CHA6005-99F 8-12GHz CHA6005-99F 8-12GHz 350mA 55ense DSCHA60052244
c 4977 transistor

Abstract: transistor on 4436
Text: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier . It is designed for a , 1/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S , )1 69 33 03 09 36-40GHz Low Noise Amplifier CHA2095a Electrical Characteristics Tamb = +25°C , Noise Amplifier CHA2095a Typical Scattering Parameters ( On wafer Sij measurements ) Bias


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PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147 c 4977 transistor transistor on 4436
Not Available

Abstract: No abstract text available
Text: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier . It is designed for a , /6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S , )1 69 33 03 09 55 36-40GHz Low Noise Amplifier CHA2095a Electrical Characteristics Tamb = , 36-40GHz Low Noise Amplifier CHA2095a Typical Scattering Parameters (On wafer Sij measurements) Bias


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PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147-27
transistor on 4436

Abstract: c 4977 transistor
Text: CHA2095a 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier . It is designed for a wide range of , United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-40GHz Low Noise Amplifier CHA2095a , without notice 36-40GHz Low Noise Amplifier CHA2095a Typical Scattering Parameters ( On wafer


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PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147 transistor on 4436 c 4977 transistor
c 4977 transistor

Abstract: No abstract text available
Text: CHA2095a 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier . It is designed for a wide range of , change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - , Noise Amplifier CHA2095a Electrical Characteristics Tamb = +25°C, Vd= 3.5V Symbol Fop , Specifications subject to change without notice 36-40GHz Low Noise Amplifier CHA2095a Typical


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PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147 c 4977 transistor
Not Available

Abstract: No abstract text available
Text: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier . It is designed for a , -27 May 08 1/6 Specifications subject to change without notice United Monolithic Semiconductors , : +33 (0)1 69 33 03 09 55 36-40GHz Low Noise Amplifier CHA2095a Electrical Characteristics , change without notice 36-40GHz Low Noise Amplifier CHA2095a Typical Scattering Parameters (On


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PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147-27
2013 - TB-666-50-11

Abstract: No abstract text available
Text: www.minicircuits.com/MCLStore/terms.jsp. Monolithic E-PHEMT MMIC Amplifier PHA-11+ Condition (GHz) 0.05 0.25 , ' website at www.minicircuits.com/MCLStore/terms.jsp. Page 3 Monolithic E-PHEMT MMIC Amplifier , Surface Mount 50 Dual Matched MMIC Amplifier .05 to 3 GHz The Big Deal PHA-11+ · Dual matched amplifier for push-pull & balanced amplifiers ·High IP2 and IP3 · May be used as a replacement to , wideband amplifier fabricated using advanced E-PHEMT technology, offering high dynamic range (High IP3 and


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PDF PHA-11+ AH11a DL1020 TB-666-50-11
2013 - Not Available

Abstract: No abstract text available
Text: -11+ Monolithic E-PHEMT MMIC Amplifier Electrical Specifications1 at 25°C, Zo=50Ω and Device Voltage 5V , Page 3 PHA-11+ Monolithic E-PHEMT MMIC Amplifier Characterization Test Circuit Vs Test Board , -11+ Monolithic E-PHEMT MMIC Amplifier Product Marking MCL PHA index over pin 1 Additional Detailed , Surface Mount Dual Matched MMIC Amplifier 50Ω PHA-11+ .05 to 3 GHz The Big Deal • Dual matched amplifier for push-pull & balanced amplifiers • High IP2 and IP3 • May be used as


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PDF PHA-11+ AH11a DL1020
2014 - Not Available

Abstract: No abstract text available
Text: PHA-11+ Monolithic E-PHEMT MMIC Amplifier Electrical Specifications1 at 25°C, Zo=50Ω and , Surface Mount Dual Matched MMIC Amplifier 50Ω PHA-11+ .05 to 3 GHz The Big Deal • Dual matched amplifier for push-pull & balanced amplifiers • High IP2 and IP3 • May be used as , dual matched wideband amplifier fabricated using advanced E-PHEMT technology, offering high dynamic , competitors, which in the range of 4-6 dB. Mini-Circuits amplifier improves the dynamic range. High P1dB


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PDF PHA-11+ AH11a DL1020
2013 - 666501

Abstract: TB-666-50-11
Text: www.minicircuits.com/MCLStore/terms.jsp. Monolithic E-PHEMT MMIC Amplifier PHA-11+ Condition (GHz) 0.05 0.25 , ' website at www.minicircuits.com/MCLStore/terms.jsp. Page 3 Monolithic E-PHEMT MMIC Amplifier , Surface Mount 50 Dual Matched MMIC Amplifier .05 to 3 GHz The Big Deal PHA-11+ · Dual matched amplifier for push-pull & balanced amplifiers ·High IP2 and IP3 · May be used as a replacement to , wideband amplifier fabricated using advanced E-PHEMT technology, offering high dynamic range (High IP3 and


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PDF PHA-11+ AH11a DL1020 666501 TB-666-50-11
2011 - Not Available

Abstract: No abstract text available
Text: www.minicircuits.com/MCLStore/terms.jsp. Monolithic E-PHEMT MMIC Amplifier PHA-11+ Min. 0.05 0.05 0.25 0.45 , ' website at www.minicircuits.com/MCLStore/terms.jsp. Page 3 Monolithic E-PHEMT MMIC Amplifier , ' website at www.minicircuits.com/MCLStore/terms.jsp. Page 4 Monolithic E-PHEMT MMIC Amplifier , Surface Mount 50 Dual Matched MMIC Amplifier .05 to 3 GHz The Big Deal · Dual matched amplifier for push-pull & balanced amplifiers ·High IP2 and IP3 · May be used as a replacement to WJ AH11a


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PDF AH11a PHA-11+ DL1020
2012 - Not Available

Abstract: No abstract text available
Text: www.minicircuits.com/MCLStore/terms.jsp. Monolithic E-PHEMT MMIC Amplifier PHA-11+ Condition (GHz) 0.05 0.25 , ' website at www.minicircuits.com/MCLStore/terms.jsp. Page 3 Monolithic E-PHEMT MMIC Amplifier , ' website at www.minicircuits.com/MCLStore/terms.jsp. Page 4 Monolithic E-PHEMT MMIC Amplifier , Surface Mount 50 Dual Matched MMIC Amplifier .05 to 3 GHz The Big Deal · Dual matched amplifier for push-pull & balanced amplifiers ·High IP2 and IP3 · May be used as a replacement to WJ AH11a


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PDF AH11a PHA-11+ DL1020
2010 - Not Available

Abstract: No abstract text available
Text: www.minicircuits.com/MCLStore/terms.jsp. Monolithic E-PHEMT MMIC Amplifier PHA-11+ Min. 0.05 0.05 0.25 0.45 , ' website at www.minicircuits.com/MCLStore/terms.jsp. Page 3 Monolithic E-PHEMT MMIC Amplifier , ' website at www.minicircuits.com/MCLStore/terms.jsp. Page 4 Monolithic E-PHEMT MMIC Amplifier , Surface Mount 50 Dual Matched MMIC Amplifier .05 to 3 GHz The Big Deal PHA-11+ · Dual matched amplifier for push-pull & balanced amplifiers ·High IP2 and IP3 · May be used as a replacement to


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PDF PHA-11+ AH11a DL1020
AH11a

Abstract: PHA-11 TB-566-50-11 E8527D N5242A DL1020 m129556 TB-566-50
Text: Instantly at minicircuits.com PHA-11+ Monolithic E-PHEMT MMIC Amplifier Electrical Specifications1 , www.minicircuits.com/MCLStore/terms.jsp. Page 3 PHA-11+ Monolithic E-PHEMT MMIC Amplifier Characterization , Surface Mount Dual Matched MMIC Amplifier 50 PHA-11+ .05 to 3 GHz The Big Deal · Dual matched amplifier for push-pull & balanced amplifiers ·High IP2 and IP3 · May be used as a replacement , wideband amplifier fabricated using advanced E-PHEMT technology, offering high dynamic range (High IP3 and


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PDF PHA-11+ AH11a DL1020 PHA-11 TB-566-50-11 E8527D N5242A DL1020 m129556 TB-566-50
2004 - OS8805

Abstract: oasis OS8805
Text: built-in peripherals making it ideal for radio, amplifier , or active speaker systems. Proprietary sound , Barlastgatan 2 S- 414 63 Göteborg, SWEDEN Tel: +46 (0) 31 704 60 30 Fax: +46 (0) 31 704 60 31 E-mail , are possible: Active speaker controller Headphones controller DVD, DVB amplifier controller CD/MD interface controller Low/mid amplifier controller without delay memory Low/mid amplifier controller with , The OS8805 is a monolithic CMOS integrated circuit, which combines high-speed micro-controllers and


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PDF OS8805 128-pin B10106 B10107 XX-04 oasis OS8805
JAN 6418

Abstract: CHA5350-99F
Text: CHA5350-99F 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5350-99F is a four stage monolithic MPA that typically provides an output power of 26.5dBm at 1dB , subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC , (0) 1 69 86 34 34 CHA5350-99F 17-24GHz Medium Power Amplifier Electrical Characteristics , : +33 (0) 1 69 86 34 34 CHA5350-99F 17-24GHz Medium Power Amplifier Absolute Maximum Ratings (1


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PDF CHA5350-99F 17-24GHz CHA5350-99F 34dBm. 17-24GHz 34dBm DSCHA53503018 JAN 6418
uPC1653

Abstract: UPC1653A UPC1653P uPC1654 414 monolithic amplifier
Text: NEC FEATURES 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER OUTLINE DIMENSIONS (TO-72) UPC1653A UPC1653P (Units in mm) · BROAD FREQUENCY RESPONSE : 1300 MHz TYP AT 3 dB DOWN · INPUT AND OUTPUT , iX DESCRIPTION AND APPLICATIONS The UPC1653 Silicon Monolithic IC is designed as a wideband amplifier covering the HF through UHF bands. This amplifier is matched to 50 ohms and is an excellent choice , TYP 20 5.5 1300 5 18 23 16 28 MAX 25 6.5 20 12 1 4-14 UPC1653A, UPC1653P TYPICAL


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PDF UPC1653A UPC1653P UPC1653 UPC1654. UPC1653A, UPC1653P uPC1654 414 monolithic amplifier
7147N

Abstract: AN7168 AN7143 AN 7168 12-SIP-FP 8 channel audio amplifier black diagram AN-716 power amplifier block diagram
Text: _AN7168 AN7168 Dual 5.7W Audio Power Amplifier ■Description The AN7168 is a monolithic integrated circuit designed for dual 5.7W audio power amplifier . Stereo operation is possible due to the 2 built-in amplifiers and together with the muting circuit and the various protection circuits, high reliability and compactness can be realized. ■Features • High stable operation • Low distortion â , ) GND (Output) 4-0 D013ÛP2 414 203 Panasonic This Material Copyrighted By Its Respective


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PDF AN7168 AN7168 12-Lead 12-SIP-FP) 100cm2 200cm2 7147N/49 bT320SE 7147N AN7143 AN 7168 12-SIP-FP 8 channel audio amplifier black diagram AN-716 power amplifier block diagram
2002 - TB-01

Abstract: VNA-22 XX211
Text: High Directivity ! NEW Monolithic Amplifier 50 VNA-22 0.5 to 2.5 GHz Maximum Ratings Operating Temperature Features · · · · · · · -40°C to 85°C Storage Temperature -55°C to 150°C DC Voltage 8V Power 800mW Input Power (no damage) 10 dBm 3V & 5V , buffer amplifier · cellular · PCN GND EXT. 2,4,5,7,8 Electrical Specifications (TAMB , Performance Data at 25°C Frequency (MHz) Outline Dimensions ( inch ) mm A .163 4.14 B .202 5.13


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PDF VNA-22 800mW XX211 Out12 M84602 ED-9810A/2 TB-01 VNA-22 XX211
2002 - M846

Abstract: TB-01 VNA-23 XX211 PL-077
Text: High Directivity ! NEW Monolithic Amplifier 50 VNA-23 0.5 to 2.5 GHz Maximum Ratings Operating Temperature Features · · · · · · · -40°C to 85°C Storage Temperature -55°C to 150°C DC Voltage 8V Power 400mW Input Power (no damage) 10 dBm 3V & 5V , buffer amplifier · cellular · PCN GND EXT. 2,4,5,7,8 Electrical Specifications (TAMB , Performance Data at 25°C Frequency (MHz) Outline Dimensions ( inch ) mm A .163 4.14 B .202 5.13


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PDF VNA-23 400mW XX211 M84602 ED-9810A/3 M846 TB-01 VNA-23 XX211 PL-077
2002 - TB-01

Abstract: VNA-21 XX211
Text: High Directivity ! NEW Monolithic Amplifier 50 VNA-21 0.5 to 2.5 GHz Maximum Ratings Operating Temperature Features · · · · · · · · -40°C to 85°C Storage Temperature -55°C to 150°C DC Voltage 8V Power 400mW Input Power (no damage) 10 dBm 3V & 5V , RF OUT 6 DC 1 · buffer amplifier · cellular · PCN GND EXT. 2,4,5,7,8 , .163 4.14 B .202 5.13 C .077 1.96 D .250 6.35 E .220 5.59 F .050 1.27 G


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PDF VNA-21 400mW XX211 M84602 ED-9810A/1 TB-01 VNA-21 XX211
2002 - TB-01

Abstract: VNA-28 XX211
Text: High Directivity ! NEW Monolithic Amplifier 50 VNA-28 0.5 to 2.5 GHz Maximum Ratings Operating Temperature Features · · · · · · · · -40°C to 85°C Storage Temperature -55°C to 150°C DC Voltage 8V Power 400mW Input Power (no damage) 10 dBm 3V & 5V , RF OUT 6 DC 1 · buffer amplifier · cellular · PCN GND EXT. 2,4,5,7,8 , A .163 4.14 B .202 5.13 C .077 1.96 D .250 6.35 E .220 5.59 F .050 1.27


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PDF VNA-28 400mW XX211 M84602 ED-9810A/8 TB-01 VNA-28 XX211
Not Available

Abstract: No abstract text available
Text: Texas Instruments TGA8041-XCC is a two-stage self-biased GaAs monolithic medium-power amplifier . The , 1 The product type, coded as F = Discrete GaAs FET A = Monolithic amplifier V = Monolithic VCO S = , TGA8041-XCC 6.5- TO 18-GHz POWER AMPLIFIER A PP R O V AL 5026 0.4-W Output Power at 1-dB Gain , and inherent reliability advantages of a monolithic device plus the ease of assembly resulting from a , LLA S , T E X A S 75265 ADVANCE INFORMATION TGA8041-XCC 6.5- TO 18-GHz POWER AMPLIFIER A PPR O


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PDF TGA8041-XCC 18-GHz 26-dBm TGA8041
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