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pal 003a

Abstract: powerex CLAMP JS0225A1 JS0230A1 KEE525B0 baker street T39 diode on 614 power transistor PAL 0LL A
Text: Gain hfe lc= 7.5A , Vce =2.5V 250 — — — Diode Forward Voltage Vfm Ifm = 7.5A — — 1.4 V Collector-Emitter Saturation Voltage VcE(SAT) IC= 7.5A , Ib=0.03A — — 2.5 V Base-Emitter Saturation Voltage VbE(SAT) lC= 7.5A , Ib=0.03A — — 3.5 V Resistive Turn 0n ton Vcc=150V — .32 0.6 flS Load Storage Time ts lC= 7.5A — .7 1.4 US Switch Times pal| Time tf Ibi =0.08 -Ib2=0.5A — .3 0.6 us Diode Reverse Recovery trr If = 7.5A — .3 .5 ¡IS Thermal Resistance, Case to Sink Lubricated Rees _ _ 0.6


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PDF KEE525B0 Amperes/300 KEE525B0 pal 003a powerex CLAMP JS0225A1 JS0230A1 baker street T39 diode on 614 power transistor PAL 0LL A
D-42

Abstract: KD221275A7 reverse forward control diagram KD221K75 kd221275a kd2212
Text: Current >EBO Veb = 7V - - 200 mA DC Current Gain hpE le = 75A , Vce = 5V 75 - - - Diode Forward Voltage Vfm • FM = 75A - - 1.8 Volts Collector-Emitter Saturation Voltage vCE(sat) lc = 75A , lB = 1,5A - - 3.0 Volts Base-Emitter Saturation Voltage VBE(sat) lc = 75A , lB = 1,5A - - 3.5 Volts Resistive Turn-on ton VCc = 600V - - 2.5 |lS Load Storage Time tS lc = 75A - - 15 (IS Switch Times Fall Time tf , T¡ s: 25°C : -Ibi-1.6, _ln = 75A A — — T: -


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PDF KD221275A7 Amperes/1200 D-42 KD221275A7 reverse forward control diagram KD221K75 kd221275a kd2212
transistor kd221k75

Abstract: KD221K75 D-40 D40 transistor
Text: mA Emitter Cutoff Current ■ebo VEB = 7V - - 200 mA DC Current Gain hpe lc = 75A , VCE = 5V 100 - - - Diode Forward Voltage Vfm lFM = 75A - - 1.8 Volts Collector-Emitter Saturation Voltage vCE(sat) lc = 75A , lB = 1.5A - - 2.5 Volts Base-Emitter Saturation Voltage VBE{sat) lc = 75A , lB » 1.5A - - 3.5 Volts Resistive Turn-on ton Vcc = 600V - - 2.5 ^s Load Storage Time ts lc = 75A _ - 15 JJLS , TIME VS. BASE CURRENT (TYPICAL) 102 101 100 ;VCC = 600V •lB1 = 1.5A ;ic = 75A -Tj = 25Â


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PDF KD221K75_ Amperes/1000 transistor kd221k75 KD221K75 D-40 D40 transistor
d35 transistor

Abstract: KD224575HB D-35
Text: Emitter Cutoff Current lEB0 Veb = 7V - - 150 mA DC Current Gain hFE IC = 75A ,Vce = 2.5V 750 - - - Diode Forward Voltage VFM iFM = 75A - - 1.8 Volts Collector-Emitter Saturation Voltage vcE(sat) lc = 75A , iB = 100mA - - 2.5 Volts Base-Emitter Saturation Voltage VBE(Sat) !c = 75A , lB= 100mA - - 3.0 Volts Resistive Turn-on ton VCc = 300V - - 2.0 tlS Load Storage Time ts lc = 75A - - 8.0 vs Switch Times Fall , VS. BASE CURRENT (TYPICAL) 101 P 100 10-1 ;VCC= 300V IB1 =0.15A ;ic = 75A -Tj = 25°C -Tj=125°C


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PDF KD224575HB Amperes/600 EIC20 d35 transistor KD224575HB D-35
ph 33j

Abstract: No abstract text available
Text: GE=ov V GE=VGES' v CE=0V lc=7.5mA, VCE=10V lc= 75A , VGE=15V lc= 75A , VGE=15V, T p lS C ' C VCC=600V, lc= 75A , Ves=15V lc=- 75A , VGS=0V Min. - - 3.0 - - - - · 't - Typ. - - 4.0 3.2 3.2 760 - Max , 700 800 1000 300 - Units pF pF pF ns c,e s ^ d (o n ) t, ^ d (o ff) t, Ie= 75A , diE/dt=- 150A//VS Q, lE= 75A , diE/dt=-150A//Ä VCC=600V, lc= 75A , V ge,=Vge2=15V, R g=17£2 - - - - - ns ns , 12 GATE-EMITTER VOLTAGE, V^, (VOLTS) 0 II 01 o > 1 lc a 75A " 16 20 EMITTER-COLLECTOR VOLTAGE


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PDF 428Avenue BP107 Amperes/1200 BP107, ID221275 75Amperes/1200 ph 33j
IQ226075

Abstract: LF101 cte table
Text: 2.5 mA VG E =VG E S , VC E =0V lc=7.5mA, VC E =10V ic= 75A , Vge=15V ic= 75A , Vge= 15V, Tj=150°C VC C =300V, lc= 75A , Vgs=15V lc= 75A , VG S =0V - 4,0 3.0 3.2 270 - UA V o lts V o lts V o lts , , lc= 75A , Vge,=VG E 2=15V, RG =33n - - - - - Diode Reverse Recovery Time Diode Reverse Recovery Charge t, t, Q, lE = 75A , diE /dt=-150A//js lE = 75A , diE /dt=-150A/jus 1.00 uc


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PDF IQ226075 Amperes/600 BP107, 75Amperes/600Volts LF101 cte table
KD225575

Abstract: powerex kd22 kd2255
Text: =600V, Vbe = - 2V Vce =600V, V be = -2V Tc=125°C Veb =7V le = 75A , Vce = 5.0V Ifm = 75A lc= 75A , lB=1.5A lc = 75A , Ib =1.5A Vcc =300V lc= 75A Ibi = - I b2=1.5A Per Half Module Transistor Part Diode Part


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PDF KD225575 BP107, Amperes/600 KD225575 T-33-35 423Avenue BP107 72003Le powerex kd22 kd2255
Diode S17

Abstract: KS52 transistor s19 KS524575 S-17 S-20 1B2 diode
Text: 7V - - 200 mA DC Current Gain hFE \q = 75A , Vce = 2V 75 - - - lc = 30A, Vce = 5V 100 - - - Diode Forward Voltage VFM Ifm = 75A - - 1.85 Volts Collector-Emitter Saturation Voltage VCE(sat) lc = 75A , lB=1A - - 2.0 Volts Base-emitter Saturation Voltage VBE{sat) \q = 75A , lB=1A - - 2.5 Volts Resistive Turn-on ton VCC = 300V - - 2.5 us Load Storage Time tS lc = 75A - - 12 US Switch Times Fall Time tf IB1


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PDF KS524575 Amperes/600 Diode S17 KS52 transistor s19 KS524575 S-17 S-20 1B2 diode
Not Available

Abstract: No abstract text available
Text: Current Min. 125°C - 1 - - 10 mA - 200 mA VEB = 7V 75A , VCE = 5V = V FM 75 - - lFM = 75A lc - - - 1.8 Volts 3.0 Volts - Collector-Emitter Saturation Voltage V CE(sat) lc = 75A , lB = 1.5A - - Base-Emitter Saturation Voltage V BE(sat) lc = 75A , iB = 1.5A - - 3.5 Volts - - 2.5 (1S , 600V lc = 75A IB1 = 1.5A, lB2= -1.5A 15 - - - - 3.0 Min. Typ


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PDF KD221275A7 Amperes/1200
CM75E3Y-24E

Abstract: 00D72 CM75E3Y24E c3072 C-30 15-20kHz vqe 24e CM75E3
Text: Collector-Emitter Saturation Voltage VCE(sat) lc = 75A , VGE = 15V - - 4.0* Volts lc = 75A , VGE = 15V, T| = 150°C - - 4.0" Volts Total Gate Charge Qß Vcc = 600V, lc = 75A , VGS = 15V - 1100 - nC Diode Forward Voltage VPM lE = 75A , VGE = 0V - - 2.5 Volts " Pulse width and repetition rate should be such that device , 75A , - - 400 ns Switch Times Turn-off Delay Time ld(otf) VGE1 =VGE2=15V, Rg = 4.212 - - 500 ns Fall Time tf - - 400 ns Diode Reverse Recovery Time V lE = 75A , diE/dt = -150A//ts - - 300 ns Diode


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PDF CM75E3 Y-24E CM75E3Y-24E Amperes/1200 CM75E3Y-24E res/1200 00D7270 00D72 CM75E3Y24E c3072 C-30 15-20kHz vqe 24e
Not Available

Abstract: No abstract text available
Text: Current !ebo VEB = 7V DC Current Gain hpE lC “ 75A , VqE = 5V - - - - 1.8 Volts - 2.5 Volts 100 - V FM lFM = 75A Collector-Emitter Saturation Voltage v CE(sat) lc = 75A , lB = 1.5A - Base*Emitter Saturation Voltage VBE{sat) lc = 75A , lB = , Voltage Resistive Turn-on Load Storage Time ts lc = 75A _ Switch Times Fall


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PDF KD221K75 Amperes/1000
transistor a12t

Abstract: transistor d30
Text: 200 mA = 75A , VCE = 2V 75 - - - = 75A , VCE = 5V 100 - - - - - 1.85 Volts - - 2.0 Volts 75A , lB = 1A - - 2.5 Volts 2.5 , ) Base-Emitter Saturation Voltage II Collector-Emitter Saturation Voltage 01 > IFm = 75A V FM 0 , Collector Cutoff Current II M in . < Test Conditions Sym bol Characteristics = 75A


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PDF KD224575 Amperes/600 72THbEl transistor a12t transistor d30
MCP1501-12E/SN

Abstract: No abstract text available
Text: > VCE = 0V lc = 7.5mA, VCE = 10V IC = 75A , VGE = 15V 3.5 5.0 2.7 2.7 380 - 1.0 0.5 6.5 3.5* - mA Volts Volts Volts nC Volts - = 150°C Vc c = 300V, lc = 75A , VfìR = 15V lE = 75A , VGS = 0V lc = 75A , VOE = 15V, Tj 2.5 * Pulse width and repetition rate should be such that device , 300V, lc = 75A , VGE1 = VGE2 = 15V- r G = 8 3 n lE = 75A , di p dt = - 150A//U.S lE = 75A , diE/dt = - 1


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PDF CM75TF-12E Amperes/600 BP107, CM75TF-12gwood, E-110 MCP1501-12E/SN
Not Available

Abstract: No abstract text available
Text: DC Current Gain hFE lC = 75A , Vce = 5V 75 - - - Volts Diode Forward Voltage - V fm Ifm = 75A - 1.8 Collector-Emitter Saturation Voltage v CE(sat) lc = 75A , lB = 1.5A - - 3.0 Volts Base-Emitter Saturation Voltage VBE(sat) lc = 75A , lB = , Time tS lc = 75A - - Switch Times Fall Time tf IB = 1.5A, lB2 = -1.5A 1 -


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PDF KD221275A7 Amperes/1200
Not Available

Abstract: No abstract text available
Text: 200 75 < - lc = 75A , VCE = 2V - - - V FM IFm = 75A - - 1.85 Volts V CE(sat) lc = 75A , lB = 1A - - 2.0 Volts V BE{sat) lc = 75A , lB = 1A - , Storage Time Switch Times - < m w Iebo _ lc = 75A , Vce = 5V Emitter Cutoff Current


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PDF KD224575 Amperes/600
ID226075

Abstract: Z103 ma
Text: V ge(lh) lc=7.5mA, VCE=10V 3.0 4.0 6.0 Volts Collector-Emitter Saturation Voltage v CE(sal) lc= 75A , Vge=15V Vi: 3.0 5.0" Volts lc= 75A , Vge=15V, Tj=150°C 3.2 * Volts Total Gate Charge Qg VCC=300V, lc= 75A , Vgs=15V — 270 — nC Diode Forward Voltage VFM lc=- 75A , VGS=0V — — 2.5 Volts " Pulse , ^d(on) — — 250 ns Loari Rise Time tr VCC=300V, lc= 75A , — — 800 ns Switch Times Turn-off , Recovery Time t„ Ie= 75A , diE/dt=—150A//ys — — 200 ns Diode Reverse Recovery Charge Q„ lE= 75A , diE


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PDF ID226075 BP107, Amperes/600 75Amperes/600Volts Z103 ma
72151 transistor

Abstract: No abstract text available
Text: hFE lc = 75A , V ce = 2.5V 750 — — — — — 1.8 Volts V fm Ifm = 75A Collector-Emitter Saturation Voltage V ce (sat) lc = 75A , lB = 100mA — — 2.5 Volts Base-Emitter Saturation Voltage V be (Sat) lc = 75A , lB = 100mA — â , Resistive Load switch limes t0n ts „ lC = 75A — Ib i =0,15A, Ib2= -1 .5 A — â


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PDF KET24575HB BP107 Amperes/600 72151 transistor
CM75DY-12E

Abstract: GE2 TRANSISTOR
Text: ov VGE = VGES' VCE = ov lc = 7.5mA, VCE = 10V lc = 75A , VGE = 15V Iq = 75A , VGE = 15V, Tj 1.0 0.5 , Vc c = 300V, lc = 75A , VGS = 15V lE = 75A , VGS = 0V - 2.5 P u ls e w id th a n d rep e titio , 1MHz Vc c = 300V, lc = 75A , VGE1 = VGE2 = 15V' r G = 8 3 ii lE = 75A , d iE/dt = - 150A//AS lE = 75A


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PDF CM75DY-12E BP107, Amperes/600 Dri25-7272 GE2 TRANSISTOR
IL02

Abstract: IL-02 IGBT G 1010 P 600 K 800
Text: 6.0 Volts Collector-Emitter Saturation Voltage v * CE(sal) lc= 75A , Vge=15V Vi:- 3.0 5.0" Volts lc= 75A , Vge=15V, TplôO'C 3.2 * Volts Total Gate Charge VCC=300V, lc= 75A , Vgs=15V — 270 — nC Diode Forward Voltage VPM lc=- 75A , VGS=0V — — 2.5 Volts " Pulse width and repetition rate should be such , Time tf VCC=300V, lc= 75A , — — 800 ns SwitchTimes Turn-off Delay Time ^d(oll) V6E1=VGE2=15V, Rg=33Q — — 600 ns Fall Time t. — — 800 ns Diode Reverse Recovery Time t„ Ie= 75A , dlE/dt=-150A/AÃ


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PDF ID226075 BP107 Amperes/600 75Amperes/600Volts IL02 IL-02 IGBT G 1010 P 600 K 800
Not Available

Abstract: No abstract text available
Text: e b =7V — — 200 mA DC Current Gain tiFE lc = 75A , V c e =5.0V 100 - — — DC Current Gain (ife lc= 75A , VCe =2.0V 75 - — — Diode Forward Voltage V fm If m = 75A — — 1.85 V Characteristics Collector-Emitter Saturation Voltage V c e (sat> lC = 75A , lB=1.0A — — 2.0 V Base-Emitter Saturation Voltage V be(sat) lC = 75A , lB =1.0A — — 2.5 V ton ts tf Vcc=300V _ _ 2.5


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PDF 00G4Qfifi BP107, KR224575 Amperes/600
KC224575

Abstract: No abstract text available
Text: KC22457S Max. V c e =600, V b e = -2 V Mt*. — ly* _ V e b =7V — — hFE lc= 75A , V c e =5.0V 100 - — — hFE lc= 75A , V ce “ 2.0V — Ifm = 75A — — Vfm 75 — 1.8 V Collector-Emitter Saturation Voltage Vce 75A , Ib =1.0A — — 2.5 V Base-Emitter Saturation Voltage Vbe(sat) |c = 75A , Ib =1.0A 3.5 , lc= 75A Units 1 mA 200 mA 15 us 3.0 its .15 °C/W .35 °C/W


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PDF 72T4bSl BP107, KC224575 Amperes/600 KC224575
1000 watts ups circuit diagram

Abstract: PRXT ID221K75 GE 047 TRANSISTOR BP107 IR Half-bridge 1000V
Text: Voltage ^GE(UI) lc=7.5mA, VCE=10V 3.0 4.0 6.0 Volts Collector-Emitter Saturation Voltage v CE(sal) lc= 75A , VGE=15V 3.2 5.0" Volts lc= 75A , Vge=15V, T|=150°C — 3.2 * Volts Total Gate Charge Qg Vcc=600V, lc= 75A , Vgs=15V — 760 — nC Diode Forward Voltage VFM lc=- 75A , VGS=0V — — 2.5 Volts " Pulse , Delay Time ^d(on) — — 800 ns . . Rise Time Load t, VCC=600V, lc= 75A , — — 700 ns Switch Times , Reverse Recovery Time t„ Ie= 75A , diE/dt=-150A/fJS — — 300 ns Diode Reverse Recovery Charge Q„ Ie= 75A


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PDF ID221K75 BP107, 75Amperes/1000 ID221K75 18Max. Amperes/1000 428Avenue 1000 watts ups circuit diagram PRXT GE 047 TRANSISTOR BP107 IR Half-bridge 1000V
Not Available

Abstract: No abstract text available
Text: hFE Diode Forward Voltage V fm Collector-Emitter Saturation Voltage = 75A , VCE = 2.5V lFM = 75A lc v CE(sat) = 75A , lB = 100mA Max. Units - - - - 1.8 Volts - - 2.5 Volts Volts 750 - 75A , lB = 100mA - - 3.0 ton Vcc 300V - - 2.0 tiS Storage Time ts lc 75A - - 8.0 |x S Fall Time


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PDF KD224575HB Amperes/600 72TMb21
DIODE ITT 310

Abstract: CM75E3Y-12E CM75E3Y-12 00D7243 75e3y
Text: 5.0 2.7 2.7 380 - 75A , VGE = 15V, T¡ = 150°C = Q g V FM V cc 300V, lc = 75A , V GS lE = 75A , V GS = 0V 15V * Pulse width and repetition rate should be such that device junction , 300V, lc = 75A , ^GE1 = ^GE2 = 15V, RG = 8.3ÍÍ lE = 75A , diE/dt = - 1 50A/fiS lE = 75A , dig/dt = - 1


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PDF CM75E3Y-12E Amperes/600 CM75E3Y-12E 000754b DIODE ITT 310 CM75E3Y-12 00D7243 75e3y
single phase inverter IGBT

Abstract: 3 phase inverter circuit control PM75DHA120 circuit using IC SA 110 55 volt switching power supply circuit single phase inverter powerex inverter pwm INVERTER igbt "single phase" QDQS777 BP107
Text: . 4 - - 10.0 mA Diode Forward Voltage VFM -lc = 75A , VCIN = 5V, Fig. 2 - 1.8 3.0 Volts Collector Emitter Saturation Voltage VCE(sat) VD = 15V, VC|N = OV, ic = 75A , Fig. 1 - 2.8 3.8 Volts Collector Emitter Saturation Voltage VCE(sat) VD=15V, Vcin = 0V, lc = 75A , T, = 125 °C, Fig. 1 — 2.4 3.4 Volts Inductive Load Switching Times ^on VD = 15V. VCIN = 0V, 0.5 1.4 2.5 trr Vcc - 600V lc - 75A - 0.3 0.6 |AS


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PDF 72T4b21 PM75DHA120 BP107, Amperes/460 PM75DHA120 QDQS777 single phase inverter IGBT 3 phase inverter circuit control circuit using IC SA 110 55 volt switching power supply circuit single phase inverter powerex inverter pwm INVERTER igbt "single phase" BP107
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